CN112366514A - Monolithic integrated cascaded quantum well width tuning mid-infrared laser and preparation method thereof - Google Patents

Monolithic integrated cascaded quantum well width tuning mid-infrared laser and preparation method thereof Download PDF

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CN112366514A
CN112366514A CN202011242900.9A CN202011242900A CN112366514A CN 112366514 A CN112366514 A CN 112366514A CN 202011242900 A CN202011242900 A CN 202011242900A CN 112366514 A CN112366514 A CN 112366514A
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张一�
牛智川
张宇
徐应强
杨成奥
谢圣文
邵福会
尚金铭
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a monolithic integrated cascade quantum well width tuning mid-infrared laser, wherein quantum wells with different luminescence wavelengths are cascaded and connected in series in a quantum well cascade region of the laser, so that a gain spectral line of the luminescence wavelength of an active region can cover a larger wavelength range, lights with different luminescence wavelengths are tuned through a distributed feedback type sampling grating, on-chip optical coupling is carried out by utilizing an S-shaped bent waveguide of a light beam coupling region, and finally laser output of a single transverse mode is realized through a flat waveguide. The laser can realize the intermediate infrared wide tuning output of the whole monolithic integrated laser, the output mode is single transverse mode and single longitudinal mode laser output, the tunable range can cover the intermediate infrared wavelength more than 2-4 mu m, and the laser has the advantages of small volume, light weight, large tunable range and coverage of intermediate infrared wave bands. The disclosure also provides a preparation method of the laser, which is simple and low in cost.

Description

Monolithic integrated cascaded quantum well width tuning mid-infrared laser and preparation method thereof
Technical Field
The disclosure relates to the technical field of infrared lasers, in particular to a monolithic integrated antimonide cascaded quantum well width tuning mid-infrared laser and a preparation method thereof.
Background
The mid-infrared band is a very important band, and because absorption peaks and atmospheric windows of many gas molecules are in the band, the mid-infrared band plays a very important role in gas detection, free space optical communication and photoelectric countermeasure. The optical module can cover the whole mid-infrared band optical module, can conveniently measure the gas molecule absorption peak of the whole mid-infrared band, and can be applied to various aspects such as gas detection and the like.
At present, a general middle infrared band semiconductor laser has a narrow tunable range, which is only dozens to hundreds of nanometers. If an external cavity grating type tuning scheme is used, although the tunable range of the laser can reach hundreds of nanometers, the volume of the laser becomes large due to the use of the external cavity structure and other optical components.
Disclosure of Invention
In view of the above problems, the invention provides a monolithic antimonide quantum well wide-tuning mid-infrared laser and a preparation method thereof, so as to solve the problems of small wavelength tuning range and large volume of the existing laser.
One aspect of the disclosure provides a monolithically integrated cascaded quantum well width tuned mid-infrared laser, comprising: the quantum well structure comprises a substrate 110, a lower limiting layer 120, a lower waveguide layer 130, a quantum well cascade region 140, an upper waveguide layer 150, an upper limiting layer 160 and a cover layer 170, wherein the quantum well cascade region 140 consists of multiple groups of quantum wells 141 with different light-emitting wavelengths and cascade regions 142; a distributed feedback type sampling grating region 210, an active gain region 220, a beam coupling region 230 and an output region 240 are disposed between the cover layer 170 and the upper waveguide layer 150, wherein the distributed feedback type sampling grating region 210 is used for tuning the light with different wavelengths generated by the laser respectively, so that the light with different wavelengths passes through the active gain region 220 and the beam coupling region 230 in sequence to form a wide-tuned single transverse mode laser.
Preferably, the material of the quantum well 141 of the different light emission wavelength at least includes InxGa1-xSb or InxGa1- xAsySb1-yThe x-component and material thickness of the material of the quantum well 141 are different for each different emission wavelength.
Preferably, the material of the cascade region 142 includes at least an InAs/AlSb superlattice.
Preferably, the material of the substrate 110 includes N-type doped GaSb, and the materials of the lower confinement layer 120, the upper confinement layer 160, the lower waveguide layer 130, and the upper waveguide layer 150 all include AlxGa1-xAsySb1-yWherein the x component and the y component of each layer of material are different and the thickness of each layer is different.
Preferably, the distributed feedback type sampling grating area 210 includes a plurality of sampling gratings, and each of the sampling gratings is respectively used for sampling and tuning light with different wavelengths.
Preferably, the active gain region 220 includes a plurality of strip waveguides, which are respectively connected to the sampling gratings in a one-to-one correspondence.
Preferably, the light beam coupling region 230 includes a plurality of binary S-type tree waveguides 231 and a slab waveguide 232, wherein the input ends of the binary S-type tree waveguides 231 are sequentially connected to the output ends of the slab waveguides, and the output ends of the binary S-type tree waveguides are connected to the slab waveguide 232.
Preferably, the laser surface is deposited with an insulating layer.
Preferably, the laser further includes an N-plane electrode and a P-plane electrode, the N-plane electrode is disposed on a side of the substrate 110 where the lower confinement layer 120 is not grown, and the P-plane electrode is disposed on the insulating layer on the surface of the active gain region 220.
The present disclosure provides a method for manufacturing a monolithically integrated cascaded quantum well width-tuned mid-infrared laser, which is applied to the monolithically integrated cascaded quantum well width-tuned mid-infrared laser according to the first aspect, and includes: growing a lower limiting layer 120, a lower waveguide layer 130, a quantum well cascade region 140, an upper waveguide layer 150, an upper limiting layer 160 and a cover layer 170 on a substrate 110 in sequence to form an epitaxial wafer; performing a first-version photolithography on the cap layer 170, and etching to form an active gain region 220, a beam coupling region 230, and an output region 240; performing second-plate photoetching on the cover layer 170, and etching to form a distributed feedback type sampling grating area 210; depositing an insulating layer on the surface of the epitaxial wafer; a P-plane electrode is judiciously fabricated on the insulating layer of the active gain region 220, and an N-plane electrode is fabricated on the side of the substrate 110 where the lower confinement layer 120 is not grown.
The at least one technical scheme adopted in the embodiment of the disclosure can achieve the following beneficial effects:
(1) the monolithic integrated cascaded quantum well wide tuning intermediate infrared laser can realize a wide tuning range of intermediate infrared wavelength, outputs light of the laser are lasers with single longitudinal mode, wide tuning and good directivity, and is suitable for gas detection of different wavelengths;
(2) the monolithic integration cascade quantum well width tuning mid-infrared laser is monolithic integration, has small volume and millimeter magnitude, and can be conveniently transported, stored and used;
(3) the monolithic integrated cascaded quantum well width tuning mid-infrared laser is convenient to control, and the light-emitting wavelength of a monolithic can be controlled through a computer or a front panel after wavelength calibration.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically illustrates a structural diagram of a monolithically integrated cascaded quantum well width tuned mid-infrared laser provided in an embodiment of the present disclosure;
fig. 2 schematically illustrates a top view of a monolithically integrated cascaded quantum well width tuned mid-infrared laser provided by an embodiment of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
As shown in fig. 1 and 2, the present disclosure provides a monolithically integrated cascaded quantum well width tuned mid-infrared laser, comprising: the quantum well structure comprises a substrate 110, a lower limiting layer 120, a lower waveguide layer 130, a quantum well cascade region 140, an upper waveguide layer 150, an upper limiting layer 160 and a cover layer 170, wherein the quantum well cascade region 140 consists of multiple groups of quantum wells 141 with different light-emitting wavelengths and cascade regions 142; a distributed feedback type sampling grating region 210, an active gain region 220, a beam coupling region 230 and an output region 240 are disposed between the cover layer 170 and the upper waveguide layer 150, wherein the distributed feedback type sampling grating region 210 is used for tuning the light with different wavelengths generated by the laser, so that the light with different wavelengths passes through the active gain region 220 and the beam coupling region 230 in sequence to form a wide-tuning single transverse mode laser.
In the embodiment of the present disclosure, the lower confinement layer 120, the lower waveguide layer 130, the quantum well cascade region 140, the upper waveguide layer 150, the upper confinement layer 160, and the cap layer 170 are sequentially epitaxially grown on the substrate 110, the structure of the entire device is similar to that of a conventional antimonide quantum well 141 laser, but in order to implement a function of wide tuning, the quantum well cascade region 140 of the laser in the embodiment of the present disclosure is composed of multiple sets of quantum wells 141 and cascade regions 142 with different emission wavelengths, and the serial connection of the quantum wells 141 with different emission wavelengths is implemented, so as to implement tunable light with a wavelength in a larger range. The laser is integrated in a single chip mode, and has the advantages of being small in size, light in weight, large in tunable range and the like.
Preferably, the material of the quantum well 141 of different emission wavelengths includes at least InxGa1-xSb or InxGa1-xAsySb1-yThe x-component and material thickness of the material of the quantum well 141 are different for each different emission wavelength.
In the embodiment of the present disclosure, the material used for the quantum well 141 is In around the wavelength band of 1.5-2.5umxGa1- xSb, wherein x is between 0.1 and 0.4 and the thickness is between 7nm and 14nm, the light emission wavelength of the quantum well 141 can be realized by changing the thickness of the quantum well 141 and the composition x. As element is introduced into the material adopted by the quantum well 141 near the waveband of 2.5-4um, that is, In is adoptedxGa1-x AsySb1-yQuaternary materials, wavelength tuning is also achieved by the x component and the thickness of the quantum well 141. By this method, quantum wells 141 with different emission wavelengths in the 1.5-4um region can be realized, and then connected together through corresponding cascade regions 142, so as to realize series connection of quantum wells 141 with different emission wavelengths.
Preferably, the material of the tandem region 142 includes at least an InAs/AlSb superlattice. The material of the cascade region 142 is composed primarily of a short period InAs/AlSb superlattice, typically 7-20 pairs in number, for cascading action. For design convenience, it is preferable to connect the quantum wells 141 of 8 different wavelengths through the tandem region 142, thereby achieving a large coverage of the mid-infrared wavelength of the active region.
In addition, the material of the substrate 110 includes N-type doped GaSb, and the materials of the lower confinement layer 120, the upper confinement layer 160, the lower waveguide layer 130, and the upper waveguide layer 150 all include AlxGa1-xAsySb1-yWherein the x component and the y component of each layer of material are different and the thickness of each layer is different.
In the embodiment of the present disclosure, the substrate 110 is made of N-type doped GaSb material; the material of the lower limiting layer 120 is an N-type Te-doped high-aluminum-composition lower limiting layer 120AlxGa1-xAsySb1-yThe aluminum component x can be 0.5-0.9, the arsenic component y can be 0.05-0.10, the specific parameters of the alloy are that the quaternary alloy is matched with the lattice of the GaSb substrate 110, and the thickness is generally 1500-; the lower waveguide layer 130 is made of Al with low-Al content and no dopingxGa1-xAsySb1-yThe Al component x can be 0.2-0.5, the As component y can be 0.02-0.04, the quaternary alloy should be matched with the GaSb substrate 110 crystal lattice, the thickness is generally 150-400 nm; in the quantum well cascade region 140, taking the example that the quantum well cascade region 140 includes 8 cascade regions 142, the material of each quantum well 141 is In with different compositionsxGa1-xAsySb1-yThe thickness of the quantum well 141 is usually 7-14nm, the x component is usually 0.15-0.35, the y component is usually 0-0.3, and the thickness of each quantum well 141 is different, and the specific parameters are determined by the light emission wavelength of the quantum well 141; the upper waveguide layer 150 is symmetrical to the lower waveguide layer 130 and is made of undoped low-aluminum AlxGa1-xAsySb1-y(ii) a The upper limiting layer 160 is symmetrical to the lower limiting layer 120, and is made of P-type Be-doped high-aluminum-component lower limiting layer 120AlxGa1-xAsySb1-y(ii) a The material of the cap layer 170 is Be heavily doped GaSb.
In the embodiment of the present disclosure, taking the quantum well cascade region 140 including 8 cascade regions 142 as an example, the quantum well 141 with a luminescence wavelength of 1.75um, 2um, 2.25um, 2.5um, 2.75um, 3um, 3.25um, 3.5um can be selected to realize the coverage of the 1.75um to 3.5um waveband. The different quantum wells 141 are cascaded by using an InAs/AlSb superlattice, wherein the thickness of InAs is generally gradually changed to 0.5-3.5nm, the thickness of AlSb is generally 1-4nm, and the period of the gradually changed superlattice is generally 6-12 periods.
In the embodiment of the present disclosure, the distributed feedback sampling grating region 210 includes a plurality of sampling gratings, and each sampling grating is used for sampling and tuning light with different wavelengths. Referring to fig. 2, a distributed feedback sampled grating region 210 is schematically illustrated, where the distributed feedback sampled grating region 210 includes 8 sampled gratings. The distributed feedback type sampling grating region 210 is used for mode selection, and each sampling grating is used for realizing the respective output of light with different wavelengths of a single longitudinal mode. For example, #1 may implement tuning of light in the 1.5-1.75um wavelength band, #2 may implement tuning of light in the 1.75-2um wavelength band, #8 may implement tuning of light in the 3.25-3.5um wavelength band.
In the embodiment of the present disclosure, the active gain region 220 includes a plurality of strip waveguides, which are respectively connected to the sampling gratings in a one-to-one correspondence. Light with different wavelengths enters the strip waveguide through the sampling grating and then oscillates, forming laser light and entering the beam coupling region 230.
Referring to fig. 2, the beam coupling region 230 includes a plurality of binary S-type tree waveguides 231 and a slab waveguide 232, wherein the input end of the binary S-type tree waveguide 231 is sequentially connected to the output end of the slab waveguide, and the output end of the binary S-type tree waveguide is connected to the slab waveguide 232. As shown in fig. 2, 8 light beams with different emission wavelengths are coupled by an S-type binary tree waveguide 231, and finally, a single transverse mode laser output is realized by a block-shaped slab waveguide coupler. Finally, the laser light is output from the side output region 240 of the laser.
In addition, the laser surface provided by the present disclosure is deposited with an insulating layer. The laser further includes an N-plane electrode disposed on the side of the substrate 110 not having the lower confinement layer 120 grown, and a P-plane electrode disposed on the insulating layer on the surface of the active gain region 220.
The monolithic integrated cascaded quantum well wide-tuning intermediate infrared laser can realize the wide tuning range of intermediate infrared wavelength, outputs laser with single longitudinal mode, wide tuning and better directivity, and is suitable for gas detection with different wavelengths; the laser is monolithic, small in size and only millimeter in magnitude, particularly, can be several millimeters wide and dozens of millimeters long, and is convenient to transport, store and use; the laser is convenient to control, and the light-emitting wavelength of the single chip can be controlled by a computer or a front panel after wavelength calibration.
Another aspect of the present disclosure provides a method for manufacturing a monolithically integrated cascaded quantum well width-tuned mid-infrared laser, which is applied to the monolithically integrated cascaded quantum well width-tuned mid-infrared laser shown in fig. 1 and 2, and includes steps S310 to S350.
S310, sequentially growing the lower confinement layer 120, the lower waveguide layer 130, the quantum well cascade region 140, the upper waveguide layer 150, the upper confinement layer 160, and the cap layer 170 on the substrate 110, thereby forming an epitaxial wafer.
S320, performing a first photolithography on the cap layer 170, and etching to form the active gain region 220, the beam coupling region 230, and the output region 240.
S330, performing second-plate photoetching on the cover layer 170 and etching to form the distributed feedback type sampling grating region 210.
And S340, depositing an insulating layer on the surface of the epitaxial wafer.
S350, a P-side electrode is formed on the insulating layer of the active gain region 220, and an N-side electrode is formed on the side of the substrate 110 where the lower confinement layer 120 is not grown.
In an embodiment of the present disclosure, an N-type Te doped high aluminum composition lower confinement layer 120Al is epitaxially grown on an N-type doped GaSb substrate 110xGa1-xAsySb1-yThe aluminum component x can be 0.5-0.9, the arsenic component y can be 0.05-0.10, the specific parameters of the alloy are that the quaternary alloy is matched with the lattice of the GaSb substrate 110, and the thickness is generally 1500-; preparing Al undoped with low aluminum component on the lower confinement layer 120xGa1-xAsySb1-yThe lower waveguide layer 130, whose Al component x can be 0.2-0.5 and As component y can be 0.02-0.04, should be lattice matched with GaSb substrate 110, and the thickness is generally 150-400 nm; on the lower waveguide layer 130, a quantum well cascade region 140 is prepared, and In with different thickness or composition is prepared respectively by taking 8 cascade regions 142 as an examplexGa1-xAsySb1-yQuantum well141, the thickness of the quantum well 141 is 7-14nm, the x component is 0.15-0.35, the y component is 0-0.3, and the specific parameters are determined by the light emission wavelength of the quantum well 141; after the quantum well cascade region 140 is completed, sequentially preparing an undoped upper waveguide layer 150 symmetrical to the lower waveguide layer 130 and a P-type Be-doped upper confinement layer 160 symmetrical to the lower confinement layer 120; finally, a Be heavily doped GaSb cap layer 170 is grown to obtain the epitaxial wafer.
In the embodiment of the present disclosure, after the preparation of the epitaxial wafer is completed, the distributed feedback type sampling grating region 210, the active gain region 220, the beam coupling region 230, and the output region 240 are prepared. Referring to fig. 2, first, a first photolithography and etching process is performed to obtain a waveguide structure of the active gain region 220 and the beam coupling region 230, and an output region 240, wherein the etching depth is generally located in the upper waveguide layer 150; then, through second-version photoetching and etching, a distributed feedback type sampling grating region 210 is formed, and sampling gratings with different wavelengths are formed, the requirement on the precision of the grating is high, the specific design condition of the grating is determined by the light-emitting wavelengths of different quantum wells 141, and in order to improve the precision of the grating, the grating can be manufactured in a nano-imprinting or e-book exposure mode; depositing a 200-300nm insulating layer on the surface of the whole epitaxial wafer, wherein the insulating layer can be SiO2Or Si3N3(ii) a Carrying out third-version photoetching and etching, opening an electrode window of the active gain area 220, preparing Ti/Pt/Au on an insulating layer of the active gain area 220 by evaporation or sputtering and other methods to form a metal electrode on a P surface, and then photoetching and corroding a dissociation groove by using a fourth version to conveniently distinguish different tube cores at the back; thinning and polishing are performed on the back surface of the substrate 110, and on this basis, an N-side electrode of AuGeNiAu is formed, including annealing and metallization. Finally, the monolithic integrated antimonide cascade quantum well wide tuning intermediate infrared laser is obtained through the processes of dissociation sintering and the like.
Optionally, the length of the straight waveguide in the active gain region 220 is generally 3mm, the width is 4-10um, and the distance between the strip waveguides is 100-200 um; the binary S-tree waveguide 231 of the beam coupling region 230 may have a radius of curvature of 1.5mm and a length of 3mm, and the slab waveguide 232 may have a length and width of 80-120um to form a single transverse mode laser output. The specific size of each waveguide can be adjusted according to actual requirements, and is not limited herein.
It can be understood that the laser obtained by the method for preparing the monolithically integrated cascaded quantum well wide-tuned mid-infrared laser provided by the present disclosure has the same technical features and technical effects as the laser shown in fig. 1, and is not described herein again.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.

Claims (10)

1. A monolithic integrated cascaded quantum well width tuned mid-infrared laser is characterized by comprising:
the quantum well structure comprises a substrate (110), a lower limiting layer (120), a lower waveguide layer (130), a quantum well cascade region (140), an upper waveguide layer (150), an upper limiting layer (160) and a cover layer (170), wherein the quantum well cascade region (140) consists of multiple groups of quantum wells (141) and cascade regions (142) with different light-emitting wavelengths;
a distributed feedback type sampling grating region (210), an active gain region (220), a beam coupling region (230) and an output region (240) are arranged between the cover layer (170) and the upper waveguide layer (150), wherein the distributed feedback type sampling grating region (210) is used for tuning the light with different wavelengths generated by the laser respectively, so that the light with different wavelengths sequentially passes through the active gain region (220) and the beam coupling region (230) to form a wide-tuning single transverse mode laser.
2. The laser according to claim 1, characterized In that the material of the quantum wells (141) of different emission wavelengths comprises at least InxGa1-xSb or InxGa1-xAsySb1-yThe x-component and material thickness of the material of the quantum well (141) are different for each different emission wavelength.
3. The laser according to claim 2, characterized in that the material of the tandem region (142) comprises at least an InAs/AlSb superlattice.
4. The laser according to claim 1, wherein the material of the substrate (110) comprises N-type doped GaSb, and the material of the lower confinement layer (120), the upper confinement layer (160), the lower waveguide layer (130), and the upper waveguide layer (150) each comprise AlxGa1-xAsySb1-yWherein the x component and the y component of each layer of material are different and the thickness of each layer is different.
5. The laser of claim 1, wherein the distributed feedback sampled grating region (210) comprises a plurality of sampled gratings, each of the sampled gratings being configured to sample and tune light of a different wavelength.
6. The laser according to claim 5, wherein the active gain region (220) comprises a plurality of strip waveguides, each connected to the sampled grating in a one-to-one correspondence.
7. A laser according to claim 6, characterized in that said beam coupling region (230) comprises a plurality of binary S-tree waveguides (231) and a slab waveguide (232), the input ends of said binary S-tree waveguides (231) being connected in turn to the output ends of said slab waveguide and the output ends to said slab waveguide (232).
8. The laser of claim 1, wherein the laser surface is deposited with an insulating layer.
9. The laser according to claim 8, further comprising an N-plane electrode disposed on a side of the substrate (110) where the lower confinement layer (120) is not grown, and a P-plane electrode disposed on an insulating layer on a surface of the active gain region (220).
10. A method for preparing a monolithically integrated cascaded quantum well width-tuned mid-infrared laser, applied to the monolithically integrated cascaded quantum well width-tuned mid-infrared laser of claims 1-9, comprising:
growing a lower limiting layer (120), a lower waveguide layer (130), a quantum well cascade region (140), an upper waveguide layer (150), an upper limiting layer (160) and a cover layer (170) on a substrate (110) in sequence to form an epitaxial wafer;
performing first-version photoetching on the cover layer (170), and etching to form an active gain region (220), a beam coupling region (230) and an output region (240);
performing second-version photoetching on the cover layer (170), and etching to form a distributed feedback type sampling grating region (210);
depositing an insulating layer on the surface of the epitaxial wafer;
and (2) intelligently preparing a P-face electrode on the insulating layer of the active gain region (220), and preparing an N-face electrode on the side of the substrate (110) where the lower limiting layer (120) is not grown.
CN202011242900.9A 2020-11-09 2020-11-09 Monolithic integrated cascaded quantum well width tuning mid-infrared laser and preparation method thereof Pending CN112366514A (en)

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