CN112366245A - Radiation ion detector device structure with MOS switch - Google Patents
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/1025—Channel region of field-effect devices
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- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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Abstract
A novel irradiated ion detector device structure relates to microelectronic technology and semiconductor technology. The invention is based on bulk silicon enhanced NMOS, and adds an irradiation sensitive area between active area channels of P substrate by STI shallow trench isolation, wherein the area is mainly composed of SiO2When MOS is in working state and total radiation dose is larger, in SiO2The irradiation sensitive region induces electrons to form a leakage channel between the drain and the source, so that the purpose of detecting irradiation is realized. The key technical problems to be solved by the invention are as follows: providing a radiation ion with MOS switchDetector device structure by calculating drain current I of devicedThereby measuring the size of the external irradiation total dose and the external irradiation influence.
Description
Technical Field
The invention relates to microelectronics and semiconductor technology.
Background
With the development of scientific technology, especially the development of space technology, spacecraft and medical equipment, more and more integrated circuits are applied to the radiation environment. When these integrated circuits are in a complicated radiation environment, various radiation effects are generated under the radiation environment, so that the performance of the integrated circuits is degraded or even fails, and therefore, the radiation detection in the environment becomes a very important ring.
When the irradiation is detected, the total dose of the environmental irradiation has to be increasedDetection of (3). Total dose effect (TID) the total dose effect is that when an integrated circuit device is in a radiation environment for a long time, multiple particle incidence causes positive charge accumulation, thereby causing the performance of the device to be degraded or even fail. When electronic components used in the spacecraft work in the ionization total dose radiation environment, the electronic components can be bombarded by high-energy particles and photons, the working parameters and the service life of the electronic components are inevitably affected and damaged, and the electronic components can cause the failure of a space system in serious conditions and even cause an unimaginable space accident[1]. The effect of ionizing total dose radiation on semiconductor components is mainly reflected in the isolation silicon dioxide layer, such as: gate oxide for MOS structures, BOX buried oxide for isolation oxide and SOI devices, and the like.
Electrons generated by radiation can be swept out of the oxide layer and collected by the gate electrode in a period of several picoseconds, and holes can slowly move to the Si/SiO2 interface under the action of a gate electric field[2]. However, some electrons have not yet been swept out of the field and recombine with holes. The fraction of electron-hole pairs that do not undergo recombination reactions is referred to as the net charge amount. The holes that are not recombined move in a step-like manner in the oxide layer in the form of localized states towards the interface. When the hole moves to the vicinity of the interface, a part of the hole is trapped by the hole trap at the interface to form positively charged oxide trap charges, so that the electrical performance of the microelectronic device is degraded or even failed[3]。
When the MOS structure is subjected to a total dose radiation, the total dose radiation process can be roughly divided into four stages: generation and initial recombination of electron-hole pairs, transport of holes in an oxide layer, formation of oxide layer trapped charges and formation of interface trapped charges[4]。
The oxide layer region of the MOS device and the interface between the oxide layer region and the silicon material are sensitive regions of total dose effect of ionizing radiation, and the electrical performance of the MOS device is degraded due to the accumulation of oxide layer trap charges and the increase of interface trap charges caused by the total dose effect, so that the functional failure of an integrated circuit can be caused[5]. Main table for electrical property degradation of MOS device caused by total dose effectThe following components are: negative drift of threshold voltage, increase of leakage current, reduction of channel carrier mobility at a silicon dioxide-silicon interface, reduction of transconductance of an MOS device, degradation of subthreshold swing and the like.
Reference documents:
[1] aerospace electronic component anti-radiation reinforcement process [ J ]. Sunwhui, Xuzhishi, Sunwanhong, Zhangwei. electronic process technology 2013(01)
[2] Research [ D ] of basic structure of anti-total-dose CMOS circuit, Chenopodium, university of electronic technology, 2017
[3] General theory of radiation-resistant integrated circuit [ M ]. university of qinghua press, korean zheng, 2011
[4] Radiation effect of semiconductor devices and integrated circuits [ M ]. national defense industry press, old discipline, 2005
[5] Semiconductor device radiation effect and radiation hardening resistance [ J ] Leyuanyuan modern electronic technology 2006(19)
Disclosure of Invention
The invention relates to a novel irradiation ion detector device structure, which is based on a bulk silicon enhanced NMOS (N-channel metal oxide semiconductor), and an irradiation sensitive area is additionally arranged between active area channels of a P substrate through STI (shallow trench isolation), wherein the irradiation sensitive area is mainly formed by SiO (silicon oxide)2Composition, when the total radiation dose is larger, in SiO2The irradiation sensitive region induces electrons to form a leakage channel between the drain and the source, so that the purpose of detecting irradiation is realized.
The size of the irradiation sensitive regions can be determined according to the size of the device, and the number of the irradiation sensitive regions can be determined and adjusted according to the characteristics of the device. Generally, the size and number of the sensitive regions have an influence on the accuracy of detecting the total irradiation dose, and can be appropriately selected according to the required accuracy.
The method of implementing the present invention is such. In the channel between the active regions of the P-substrate of a conventional bulk silicon enhancement type NMOS device, a radiation sensitive region is added, wherein the radiation sensitive region is connected to the insulating layer under the gate.
The MOS structure is arranged on a P-type substrateMaking two N+The channel region is arranged between the source region and the drain region, the transverse distance between the source region and the drain region is the channel length, and an oxide layer grown by a thermal oxidation process is arranged on the surface of the channel region and serves as a medium, namely an insulating layer. And evaporating a layer of metal on the source region, the drain region and the insulating layer to be used as electrodes, namely a source electrode, a drain electrode and a grid electrode. Forming SiO in the channel region by STI shallow trench isolation2A radiation sensitive region formed in contact with the insulating layer.
When a suitable voltage V is applied to the gateGSAn electric field is generated beneath the gate and directed into the semiconductor body. When V isGSIncrease to threshold voltage VTDue to the action of the electric field, the surface of the P-type semiconductor below the grid begins to form an inversion layer to form connected N+Source region and N+And an N-type channel of the drain region. Since there are a large number of mobile electrons in the channel, when a drain-source voltage V is applied between the drain and the sourceDSThen, a drain current I can be generatedDHowever, due to the blocking of the radiation sensitive region, the channel between the active regions is not conducted, and no drain current I is generatedDTherefore, the whole MOS structure has the function of a switch, when the MOS is not positioned in the working region, the drain current can not be generated even if the MOS is subjected to ionization irradiation, and only when the MOS is positioned in the working region, the drain current can be generated by the ionization irradiation.
When the total irradiation dose is larger, the total dose radiation can ionize silicon dioxide material atoms to generate electron-hole pairs, after the electron-hole pairs are generated, a part of electrons can be initially compounded immediately, because the mobility of the electrons is much larger than that of the holes, the electron-hole pairs which do not participate in the initial compounding can enable the electrons to be swept out of an oxide layer in a very short time under the action of an electric field, and only the holes left in the oxide layer participate in the next transportation. Since the mobility of holes in the oxide layer is low, when electrons are swept out of the oxide layer quickly, it can be considered that the holes still stay at their initial positions and then move toward the silicon dioxide-silicon interface under the action of an electric field. The oxide layer contains a large number of neutral hole traps which are mainly composed of oxygen vacancy defects, the oxygen vacancy traps are essentially formed by incompletely oxidized silicon dioxide, and after the traps capture holes, the holes are released only under the condition of very small probability, so that the deep level traps can be regarded as fixed hole capture centers, and the holes captured by the traps form oxide layer fixed charges.
The irradiation sensitive region generates positive oxide layer trap charges on the oxide layer surface of the sensitive region due to the influence of the total dose effect, and the trap charges can make the P-type surface at the adjacent place inverse, namely, form an n-type region, thereby forming a leakage channel between the source and the drain.
The device structure is a bulk silicon-based enhanced NMOS structure, and has the advantage that when ionizing radiation generates electron-hole pairs in a sensitive area, electrons can flow out through the insulating layer and the grid to provide an electron current channel, so that too high diversion voltage does not need to be arranged between a source and a drain.
The whole device structure works in the P well, so that the whole device structure has an isolation effect with other device structures, and the structure can be integrated highly in the integrated circuit industry with high integration nowadays.
The invention has the beneficial effects that:
1. the device structure can conveniently detect the total external irradiation dose. When the total irradiation dose is small, the drain-source current cannot be measured due to the obstruction of the sensitive region, but when the total irradiation dose is large, the channel is conducted, and the source-drain current can be measured, so that the total irradiation dose can be detected by measuring the value of the source-drain current.
2. The whole MOS structure plays a switching role, the selectivity of a device working area is increased, the MOS is in an enhancement mode, the threshold voltage is high, and the MOS cannot lose effectiveness due to irradiation influence.
3. The grid provides a current channel, and the source-drain diversion voltage is reduced.
4. The device has the function of isolation from other devices and has high integration level.
5. The size of the irradiation sensitive area of the structure can be selected according to the size of the device, and the number of the irradiation sensitive areas can be determined and also can be properly adjusted according to the characteristics of the device.
Drawings
FIG. 1 is a drawing of a bulk silicon NMOS device with radiation sensitive regions of the present invention
FIG. 2 is a diagram of a device of the present invention when the total dose of radiation is small
FIG. 3 is a diagram of the device of the present invention when the total dose of the irradiation is large
FIG. 4 is a top view of one process implementation of the present invention
FIG. 5 is a top view of another process implementation of the present invention
Detailed Description
In order to make the explanation of the present invention clearer, the present invention is further described in detail below with reference to the drawings and examples. The following examples and drawings are illustrative only and are not to be construed as limiting the present patent.
In order to improve the stability of the aerospace equipment in China and ensure that the aerospace equipment can maintain precise work, the aerospace system in China needs to be in a ready state at any time, and thus the aerospace equipment needs to be capable of coping with a complex radiation environment.
Because the space environment can generate radiation and can generate an irradiation effect on the structure of the space equipment, the device structure of the radiation ion detector with the MOS switch can be applied to the scene. The space environment has low dose rate to the irradiation generated by the system, and the long-time filling can generate the total dose effect.
As shown in FIG. 1, a suitable voltage V is applied to the gateGSAn electric field is generated beneath the gate and directed into the semiconductor body. When V isGSIncrease to threshold voltage VTDue to the action of the electric field, the surface of the P-type semiconductor below the grid begins to generate strong inversion to form connected N+Source region and N+And an N-type channel of the drain region. Since there are a large number of mobile electrons in the channel, when a drain-source voltage V is applied between the drain and the sourceDSThen, a drain current I can be generatedDHowever, due to the blocking of the radiation sensitive region, the channel between the active regions is not conducted, and no drain current I is generatedDThe structure shown in fig. 2 is generated.
As shown in fig. 3, when the MOS switch is turned on, electrons are induced at the periphery of the sensitive region when the total irradiation dose is large, so that a source-drain conduction channel is formed with the inversion layer electrons, and a source-drain current is generated.
In conclusion, the total external irradiation dose can be known by detecting the source-drain current.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (5)
1. A radiation ion detector device structure with MOS switch is provided with a source electrode, a drain electrode, a grid electrode and a channel semiconductor region on an insulating layer.
2. The MOS device structure of claim 1, wherein an irradiation sensitive region is etched in a trench between active regions of the P substrate by STI shallow trench isolation techniques, the sensitive region consisting essentially of SiO2And (4) forming.
3. The MOS device structure of claim 1, wherein when a gate-source voltage V is appliedGSAnd source-drain voltage VDSTo generate an inversion layer in the channelBecause of the obstruction of the radiation sensitive area, the channel can not be conducted, and the MOS plays a role of a switch.
4. The MOS device structure of claim 1, wherein the MOS device is in operation when an inversion layer has been formed in the channel, and wherein electrons from the inversion layer are generated around the sensitive region when the total dose is greater, such that the channel is turned on to form a channel and a source leakage current I is generatedDS。
5. The MOS structure of claim 2, wherein the source-drain I in the channel is measured byDSThe current can detect the external radiation ions.
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| WO2023137974A1 (en) * | 2022-01-18 | 2023-07-27 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method for semiconductor structure |
| CN115320848A (en) * | 2022-10-13 | 2022-11-11 | 电子科技大学 | Unmanned aerial vehicle system with keep away barrier function |
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