CN112366228A - Self-excitation resistance timer based on potassium tantalate surface electron gas and preparation method thereof - Google Patents
Self-excitation resistance timer based on potassium tantalate surface electron gas and preparation method thereof Download PDFInfo
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- CN112366228A CN112366228A CN202011157568.6A CN202011157568A CN112366228A CN 112366228 A CN112366228 A CN 112366228A CN 202011157568 A CN202011157568 A CN 202011157568A CN 112366228 A CN112366228 A CN 112366228A
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- electron gas
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- time
- potassium tantalate
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052700 potassium Inorganic materials 0.000 title claims abstract description 21
- 239000011591 potassium Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 229910052786 argon Inorganic materials 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 241000764238 Isis Species 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 2
- -1 Argon ion Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- G—PHYSICS
- G04—HOROLOGY
- G04G—ELECTRONIC TIME-PIECES
- G04G15/00—Time-pieces comprising means to be operated at preselected times or after preselected time intervals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention relates to a self-excitation resistance timer based on potassium tantalate surface electron gas and a preparation method thereof. Using potassium tantalite single crystal material as substrate and Ar+Generating oxygen vacancies on the surface of potassium tantalate by an argon ion beam bombardment process to form a two-dimensional electron gas layer; by changing Ar+And (3) bombarding voltage, and modulating the carrier density of the two-dimensional electron gas to obtain the self-excited resistance timer with different resistance growth rates along with time. The electrical measurement result shows that the resistance of the device linearly increases along with time, and the time can be recorded by utilizing the linear relation. Under steady conditions, it has a fixed rate of resistance increase and can be maintained for a long period of time. Book (I)The self-excitation resistance timer provided by the invention has stable performance and simple structure, does not need electric drive in the time recording process, and can be widely applied to the fields of electronic chips, intelligent devices and the like.
Description
Technical Field
The invention belongs to the technical field of materials, and particularly relates to a resistance timing device based on electron gas.
Background
Two-dimensional electron gas (2 DEG), which is recognized at the interface of oxide, has attracted considerable attention in recent years due to its remarkable physical properties, such as superconductivity, magnetoresistance, ferromagnetism, and the like. Specifically, LaAlO3/SrTiO3The 2DEG at the interface exhibits high mobility and persistent photoconductivity, making it a candidate material for future electronic and memory devices. As research progresses, a simpler method was developed to induce a two-dimensional electron gas layer on the STO surface by creating oxygen vacancies. Argon ion (Ar +) bombardment is an effective technique for separating oxygen ions from oxides, resulting in oxygen vacancies. The charge carrier density is determined by the bombardment voltage and time. Despite the different preparation methods, these 2DEG systems show similar optical-electrical transmission characteristics. Their intrinsic resistance is stable, independent of time. As another perovskite-structured oxide, potassium carbonate (KTaO)3KTO) surface can be used to form a high mobility 2DEG by bombarding an argon ion beam thereon. One obvious advantage of KTO over STO is that there is a large spin-orbit coupling. Although some studies have been made on two-dimensional electron gas based on KTO, none have clarified the dependence of resistance with time. It is actually very important to elucidate the transport properties of the oxygen vacancy-induced two-dimensional electron gas, which avoids the influence of other oxides, thereby directly reflecting the properties of KTO.
Disclosure of Invention
The invention aims to obtain two-dimensional electron gas with high carrier density on a potassium tantalate (KTO) substrate by Ar + bombardment, and the resistance of the two-dimensional electron gas has the characteristic of linear dependence on time.
The technical scheme for realizing the aim of the invention is to provide a self-excitation resistance timer based on potassium tantalate surface electron gas, which comprises a metal electrode and a potassium tantalate single crystal substrate; the surface of the substrate is provided with oxygen vacancies generated by bombardment of high-energy argon ion beams to form a two-dimensional electron gas layer, and the resistance is linearly increased along with the time extension.
The technical scheme of the invention also comprises a preparation method of the self-excitation resistance timer based on the potassium tantalate surface electron gas, which takes a potassium tantalate single crystal material as a substrate and adopts Ar+Generating oxygen vacancies on the surface of potassium tantalate by an argon ion beam bombardment process to form a two-dimensional electron gas layer; by changing Ar+And (3) bombarding voltage, and modulating the carrier density of the two-dimensional electron gas to obtain the self-excited resistance timer with different resistance growth rates along with time.
In the preparation method of the self-excitation resistance timer based on the potassium tantalate surface electron gas, Ar+The bombardment voltage is 200-500V, and the argon pressure is 2 multiplied by 10-4～5×10-4mbar, wherein the bombardment time is 2-15 minutes; polymethyl methacrylate can also be used for spin coating on the surface of potassium tantalate, so that the negative influence of oxygen in air on a surface electron gas layer is eliminated.
The invention provides a two-dimensional electron gas for obtaining high carrier density on a KTO substrate, which is a material with special metastable property of electric transport, the resistance of the material has the characteristic of linear dependence on time, and long-time recording can be carried out under the condition of no electric drive. The material can be used in scenes where no power supply can be supplied for a long time, and has the advantages which cannot be compared with common electrically driven timers.
The invention has the beneficial effects that:
1. the electron gas material provided by the invention has the advantages that the resistance can be linearly increased along with time, and the resistance and the growth rate thereof can be increased by Ar+The bombardment voltage is determined, so that the recording of time can be realized.
2. The electronic gas material provided by the invention does not need continuous electric drive in the process of naturally increasing the resistance. Which, in contrast to conventional crystal oscillator based timers, can perform long time recordings without electrical drive for the 2DEG on the KTO. In a stable environment, the device does not deviate from the linear increase in resistance, even over a long period of time.
Drawings
Fig. 1 is a schematic flow chart of a manufacturing process of a self-excited resistor timer according to an embodiment of the present invention;
FIG. 2 is a graph of resistance versus time of a resistance timer according to an embodiment of the present invention after turning off ambient light;
FIG. 3 is a graph of resistance versus time for samples prepared at different Ar + bombardment voltages for examples of the present invention.
Detailed Description
The technical scheme of the invention is further explained by combining the drawings and the embodiment.
Example 1
Referring to fig. 1, which is a schematic flow chart of the preparation process of the self-excited resistance timer provided in this embodiment, the preparation process of the sample is as follows: ar of (001) -oriented KTO single crystal was carried out for 10 minutes on a water-cooled sample holder+Bombarding with Ar + 250V Ar + bombardment voltage and argon pressure of 10-4mbar, bombardment time of 10 minutes, forming a conductive layer 2DEG on the KTO substrate; leading in a lead on the KTO surface 2DEG by using a bonding machine for electrical measurement; the KTO electronic resistance timer was completed using polymethyl methacrylate (PMMA) spin coating to avoid its oxidation.
Referring to fig. 2, a resistance-time curve of the resistance timer provided in this embodiment after turning off the ambient light; this example measured the resistance of the device as a function of time with room temperature degaussing using a resistance timer made at an Ar + bombardment voltage of 250 volts. It can be observed from fig. 2 that: the resistance remains linearly dependent on time and does not tend to stabilize over 96 hours of testing. In practical applications, the passage of time may be measured by measuring the resistance value. This property is based on the phenomenon that KTO surfaces exhibit metastable transport after Ar + bombardment. Therefore, even without voltage driving, the resistance of the resistor can spontaneously increase linearly, i.e. the whole process is self-excited.
Example 2
According to the process provided in example 1, the resistance timer with different resistance growth rates with time is prepared by adopting Ar + bombardment voltages of 250V, 300V, 350V, 400V and 500V respectively.
Referring to FIG. 3, a plot of resistance versus time for samples prepared in this example at different Ar + bombardment voltages is shown. As can be seen in FIG. 3, samples prepared at different Ar + bombardment voltages exhibited different rates of resistance increase, where ROffset of = R–R0R is the present resistance of the device, R0Is the resistance of the device at time 0. Their rate of resistance increase over time is strongly dependent on the strike voltage. Generally, samples that grow faster have a higher accuracy of time registration. In practical applications, a timing device of a desired growth rate can be obtained by using a suitable bombardment voltage.
The self-excitation resistance timer provided by the embodiment of the invention does not need electric driving for timing, and has long effective working time. The product provided by the embodiment of the invention has the advantages of simple structure and strong stability, and has application prospects in the fields of electronic chips, intelligent devices and the like.
Claims (4)
1. A self-excitation resistance timer based on potassium tantalate surface electron gas is characterized in that: it comprises a metal electrode and a potassium tantalate monocrystal substrate; the surface of the substrate is provided with oxygen vacancies generated by bombardment of high-energy argon ion beams to form a two-dimensional electron gas layer, and the resistance is linearly increased along with the time extension.
2. A preparation method of a self-excitation resistance timer based on potassium tantalate surface electron gas is characterized by comprising the following steps: using potassium tantalite single crystal material as substrate and Ar+Generating oxygen vacancies on the surface of potassium tantalate by an argon ion beam bombardment process to form a two-dimensional electron gas layer; by changing Ar+And (3) bombarding voltage, and modulating the carrier density of the two-dimensional electron gas to obtain the self-excited resistance timer with different resistance growth rates along with time.
3. The method for preparing a self-excited resistance timer based on potassium tantalate surface electron gas as claimed in claim 2, wherein: ar (Ar)+The bombardment voltage is 200-500V, and the pressure of argon gas isIs 2 x 10-4～5×10-4mbar, bombardment time 2-15 minutes.
4. The method for preparing the self-excited resistance timer based on the two-dimensional electron gas on the surface of the potassium tantalate as claimed in claim 2, wherein the method comprises the following steps: polymethyl methacrylate is used for spin coating on the surface of potassium tantalate, and the negative influence of oxygen in air on a surface electron gas layer is eliminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011157568.6A CN112366228B (en) | 2020-10-26 | 2020-10-26 | Self-excitation resistor timer and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011157568.6A CN112366228B (en) | 2020-10-26 | 2020-10-26 | Self-excitation resistor timer and preparation method thereof |
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| Publication Number | Publication Date |
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| CN112366228A true CN112366228A (en) | 2021-02-12 |
| CN112366228B CN112366228B (en) | 2024-02-20 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5565750A (en) * | 1995-08-30 | 1996-10-15 | The Louis Allis Company | Apparatus for applying field excitation to a synchronous electric motor |
| US5968676A (en) * | 1997-06-05 | 1999-10-19 | Tdk Corporation | Magnetoresistance effect film and magnetoresistance effect type head |
| JP2016072510A (en) * | 2014-09-30 | 2016-05-09 | ブラザー工業株式会社 | Temperature control device and laser processing device |
| US20170352540A1 (en) * | 2016-06-06 | 2017-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus |
| CN109690945A (en) * | 2016-07-11 | 2019-04-26 | 艾皮乔尼克控股有限公司 | Surface acoustic wave RFID sensor for haemodynamics wearable device |
| CN110023748A (en) * | 2016-08-16 | 2019-07-16 | 艾皮乔尼克控股有限公司 | Surface acoustic wave RFID sensor for chemical detection and (biology) molecular diagnosis |
-
2020
- 2020-10-26 CN CN202011157568.6A patent/CN112366228B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5565750A (en) * | 1995-08-30 | 1996-10-15 | The Louis Allis Company | Apparatus for applying field excitation to a synchronous electric motor |
| US5968676A (en) * | 1997-06-05 | 1999-10-19 | Tdk Corporation | Magnetoresistance effect film and magnetoresistance effect type head |
| JP2016072510A (en) * | 2014-09-30 | 2016-05-09 | ブラザー工業株式会社 | Temperature control device and laser processing device |
| US20170352540A1 (en) * | 2016-06-06 | 2017-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus |
| CN109690945A (en) * | 2016-07-11 | 2019-04-26 | 艾皮乔尼克控股有限公司 | Surface acoustic wave RFID sensor for haemodynamics wearable device |
| CN110023748A (en) * | 2016-08-16 | 2019-07-16 | 艾皮乔尼克控股有限公司 | Surface acoustic wave RFID sensor for chemical detection and (biology) molecular diagnosis |
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| CN112366228B (en) | 2024-02-20 |
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