CN112366170A - Wafer cutting process and glass carrier plate - Google Patents
Wafer cutting process and glass carrier plate Download PDFInfo
- Publication number
- CN112366170A CN112366170A CN202011341290.8A CN202011341290A CN112366170A CN 112366170 A CN112366170 A CN 112366170A CN 202011341290 A CN202011341290 A CN 202011341290A CN 112366170 A CN112366170 A CN 112366170A
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- China
- Prior art keywords
- wafer
- glass carrier
- face
- carrier plate
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 52
- 238000005520 cutting process Methods 0.000 title claims abstract description 39
- 239000002313 adhesive film Substances 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims abstract description 5
- 229920006254 polymer film Polymers 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a wafer cutting process, and belongs to the field of wafer processing. A wafer cutting process comprises the following steps: plating a metal film on one end face of the wafer; coating a glue film on a glass carrier plate with a curved surface; bonding the other end face of the wafer to the end face of the coating adhesive film of the glass carrier plate, and coating a polymer film on one end face of the wafer; using laser to etch a cutting channel on one end face of the wafer, and fusing the metal film; and cutting the wafer on the cutting path by using a diamond cutter wheel, cutting off the wafer and stopping on the adhesive film.
Description
Technical Field
The invention relates to the field of wafer processing, in particular to a wafer cutting process and a glass carrier plate.
Background
With the development of semiconductor technology, the requirements on the wafer processing technology are higher and higher, and the processing difficulty of ultrathin wafers is higher and higher. During processing or during transport, wafers are prone to bending deformation.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a wafer cutting process and a glass carrier plate.
The purpose of the invention can be realized by the following technical scheme:
a wafer cutting process comprises the following steps:
step 1: plating a metal film on one end face of the wafer;
step 2: coating a glue film on a glass carrier plate with a curved surface;
and step 3: bonding the other end face of the wafer to the end face of the coating adhesive film of the glass carrier plate, and coating a polymer film on one end face of the wafer;
and 4, step 4: using laser to etch a cutting channel on one end face of the wafer, and fusing the metal film;
and 5: and cutting the wafer on the cutting path by using a diamond cutter wheel, cutting off the wafer and stopping on the adhesive film.
Further, the method also comprises the step 6: and (3) upwards fixing the end face of the wafer bonded glass carrier plate on the cutting die frame, and removing the adhesive film to separate the glass carrier plate from the wafer.
Further, in the step 6, the wafer and the glass carrier are separated by using the DI water heated by soaking to dissolve the hydrosol.
The glass carrier plate for wafer processing comprises a glass carrier plate with at least one concave end face, wherein glue films are coated on the concave end face of the glass carrier plate, and wafers are bonded on the end face of the glass carrier plate coated with the glue films.
The invention has the beneficial effects that:
compared with the prior art, the concave or downward-bent glass carrier plate is adopted, and the glass carrier plate with thick edge is not needed, so that the edge yield is higher, and the excessively thick glass carrier plate material is cut. The glass support plate which is bent downwards is matched with the soft adhesive film to adapt to the natural edge shape of the wafer after the wafer is transferred, the soft adhesive film provides flexible support, and the risk of wafer breakage in the processing process is reduced. The combination of laser and diamond cutting wheel cutting process can overcome the cutting challenge of thin wafer and has low cost and good mass production.
Drawings
The invention will be further described with reference to the accompanying drawings.
Fig. 1 is a schematic view of a glass carrier after step 2 of the present application is completed;
FIG. 2 is a schematic view of a wafer after bonding a glass carrier according to the present application;
FIG. 3 is a schematic diagram of the process structure after completion of step 3;
FIG. 4 is a schematic diagram of the process structure after completion of step 4;
FIG. 5 is a schematic diagram of the process structure after completion of step 5;
FIG. 6 is a schematic view of the present application after placement on a cutting die frame;
FIG. 7 is a schematic diagram of the process after completion of step 6;
FIG. 8 is an enlarged view of a portion of FIG. 4 at A;
fig. 9 is a partially enlarged schematic view of a portion B in fig. 5.
The parts corresponding to the reference numerals in the figures are as follows:
1. a glass carrier plate; 2. a glue film; 3. a wafer; 4. a polymeric membrane; 5. cutting the mold frame; 6. cutting a channel; 7. a metal film; 8. and supporting the mold frame.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that in the drawings of the present application, the size of some components or structures may be exaggerated for convenience of illustration and illustration, and this is not to be construed as limiting the invention.
In one example of the present application, a wafer dicing process is involved, which may include the steps of:
the wafer should first be metallized, i.e. a metal film is plated on one end face of the wafer, where the metal plating is, for example, electroplating or galvanic plating.
As shown in fig. 1, the glass carrier is prepared, and the glass carrier may have at least one concave end surface, i.e. one end surface of the glass carrier in this example is low in the center and high in the edge. And a glue film is required to be coated on the concave surface of the glass carrier plate. In order to ensure that the thin wafer is not easily broken when being bonded with the glass carrier, the supporting mold frame 8 can be used to hold the lower part of the wafer, and then the wafer is bonded on the glass carrier. After the coating is finished, the other end face of the wafer is bonded on the glass carrier plate, and the wafer is fixed on the glass carrier plate through the adhesive film, as shown in fig. 2.
Then, a polymer film is coated on the non-bonding surface of the wafer, as shown in fig. 3. After the coating is completed, the curved process structure is flattened manually or by an instrument, and specifically, the wafer may be flattened using a rolling device with rollers. Then, laser is used to scribe a scribe line on the non-bonding surface of the wafer, and the metal film on the end surface is fused, and the finished process structure is shown in fig. 4.
Through the above steps, the cutting pattern is formed, but the whole cutting step is not completed, so the diamond cutter wheel can be used to further cut downwards along the carved cutting path, and the wafer is cut off, when the wafer is stopped at the adhesive film layer, as shown in fig. 5. Therefore, the cutting of the wafer is completed, and the thinned wafer is supported by the glass carrier, so that the breakage caused by stress can be avoided. After cutting, the transparent polymer wall layer can be removed by using an organic solvent or water. The bare crystal grains are cut off but attached to the adhesive film in the cleaning process and cannot be taken off from the glass carrier plate.
In addition, if the glass carrier needs to be taken down for subsequent processes, the end face of the wafer bonded glass carrier can be upward and fixed on the cutting mold frame as shown in fig. 6. When the glue film is made of water-soluble material or poor material, such as DAF film, the glue film is dissolved in the heated DI water, and the wafer and the glass carrier are separated, the final process structure is shown in fig. 7. And then the wafer fixed on the cutting die frame is placed in a vacuum environment for drying, and all processes before encapsulation are completed.
In summary, compared with the prior art, the concave or downward-curved glass carrier is adopted, and the glass carrier with thick edges is not required, so that the edge yield is higher, and the glass carrier material with excessive thickness is cut. The glass carrier plate which is bent downwards is matched with the soft adhesive film to adapt to natural deformation of the wafer after the wafer is transferred, and the soft adhesive film provides flexible support, so that the risk of wafer breakage in the processing process is reduced. The combination of laser and diamond cutting wheel cutting process can overcome the cutting challenge of thin wafer and has low cost and good mass production.
In addition, in another example of this application, disclose a glass support plate for wafer processing, its characterized in that, including the glass support plate that has at least one recessed terminal surface, the coating has the glued membrane on the recessed terminal surface of glass support plate, the bonding on the terminal surface of glass support plate coating glued membrane the wafer.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (5)
1. A wafer cutting process is characterized by comprising the following steps:
step 1: plating a metal film on one end face of the wafer;
step 2: coating a glue film on a glass carrier plate with a curved surface;
and step 3: bonding the other end face of the wafer to the end face of the coating adhesive film of the glass carrier plate, and coating a polymer film on one end face of the wafer;
and 4, step 4: using laser to etch a cutting channel on one end face of the wafer, and fusing the metal film;
and 5: and cutting the wafer on the cutting path by using a diamond cutter wheel, cutting off the wafer and stopping on the adhesive film.
2. The wafer dicing process of claim 1, further comprising step 6: and (3) upwards fixing the end face of the wafer bonded glass carrier plate on the cutting die frame, and removing the adhesive film to separate the glass carrier plate from the wafer.
3. The wafer cutting process as claimed in claim 2, wherein in the step 6, the adhesive film is dissolved in heated DI water to separate the wafer and the glass carrier.
4. The wafer dicing process of claim 1, wherein the adhesive film material is a DAF film.
5. The glass carrier plate for wafer processing is characterized by comprising a glass carrier plate with at least one concave end face, wherein glue films are coated on the concave end face of the glass carrier plate, and wafers are bonded on the end face of the glue film coated on the glass carrier plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011341290.8A CN112366170A (en) | 2020-11-25 | 2020-11-25 | Wafer cutting process and glass carrier plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011341290.8A CN112366170A (en) | 2020-11-25 | 2020-11-25 | Wafer cutting process and glass carrier plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112366170A true CN112366170A (en) | 2021-02-12 |
Family
ID=74533954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011341290.8A Pending CN112366170A (en) | 2020-11-25 | 2020-11-25 | Wafer cutting process and glass carrier plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112366170A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200710980A (en) * | 2005-03-10 | 2007-03-16 | Nec Electronics Corp | Method for manufacturing semiconductor device |
| TW200908116A (en) * | 2007-08-10 | 2009-02-16 | Advanced Semiconductor Eng | Sawing method for a semiconductor element with a microelectromechanical system |
| JP2009277884A (en) * | 2008-05-14 | 2009-11-26 | Sharp Corp | Method of manufacturing electronic element module, electronic element module, and electronic information apparatus |
| CN107408560A (en) * | 2015-01-14 | 2017-11-28 | 康宁股份有限公司 | Glass substrate and the display device for including the glass substrate |
-
2020
- 2020-11-25 CN CN202011341290.8A patent/CN112366170A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200710980A (en) * | 2005-03-10 | 2007-03-16 | Nec Electronics Corp | Method for manufacturing semiconductor device |
| TW200908116A (en) * | 2007-08-10 | 2009-02-16 | Advanced Semiconductor Eng | Sawing method for a semiconductor element with a microelectromechanical system |
| JP2009277884A (en) * | 2008-05-14 | 2009-11-26 | Sharp Corp | Method of manufacturing electronic element module, electronic element module, and electronic information apparatus |
| CN107408560A (en) * | 2015-01-14 | 2017-11-28 | 康宁股份有限公司 | Glass substrate and the display device for including the glass substrate |
| US20180005960A1 (en) * | 2015-01-14 | 2018-01-04 | Corning Incorporated | Glass substrate and display device comprising the same |
Non-Patent Citations (1)
| Title |
|---|
| 江朝宗等: "新一代晶圆划片技术", 先进封装技术与设备, 30 June 2007 (2007-06-30), pages 31 - 34 * |
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