CN112366148B - Substrate concentration determination method, substrate concentration determination device, computer equipment and readable storage medium - Google Patents
Substrate concentration determination method, substrate concentration determination device, computer equipment and readable storage medium Download PDFInfo
- Publication number
- CN112366148B CN112366148B CN202011388511.7A CN202011388511A CN112366148B CN 112366148 B CN112366148 B CN 112366148B CN 202011388511 A CN202011388511 A CN 202011388511A CN 112366148 B CN112366148 B CN 112366148B
- Authority
- CN
- China
- Prior art keywords
- chip
- measured
- capacitance measurement
- tested
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The application provides a substrate concentration determination method, a substrate concentration determination device, computer equipment and a readable storage medium, and relates to the technical field of semiconductor manufacturing processes. According to the method, the capacitance measurement difference of the chip set to be measured is calculated according to the capacitance measurement values of a plurality of chips to be measured with the same substrate doping concentration in the chip set to be measured and the capacitance measurement difference of each chip to be measured, and then the characteristic corresponding relation between the substrate doping concentration of the chip to be measured and the capacitance measurement difference is determined according to the capacitance measurement difference of each chip set to be measured with different substrate doping concentrations, so that the optimal substrate doping concentration of the chip to be measured corresponding to the minimum capacitance measurement difference is determined according to the characteristic corresponding relation, the influence on the electrical characteristic measurement result is greatly reduced through the optimal substrate doping concentration, and the electrical characteristic measurement accuracy and stability are improved.
Description
Technical Field
The present application relates to the field of semiconductor manufacturing process technologies, and in particular, to a method and an apparatus for determining a substrate concentration, a computer device, and a readable storage medium.
Background
In the semiconductor device manufacturing process, chip probing is usually performed after the chip is processed, so as to distinguish good products from unqualified products in time for subsequent processing, and the chip probing operation usually requires the connection of probes on a probing device and test keys located on a scribe line of a wafer where the chip to be tested is located to measure the electrical characteristics of the chip to be tested. It should be noted that in the process of measuring the electrical characteristics of the chip, the electrostatic accumulation effect capability of the chip is related to the substrate doping concentration, and the measurement accuracy and stability of the electrical characteristics are significantly affected by the electrostatic accumulation effect capability of the chip, so the measurement accuracy and stability of the electrical characteristics are usually affected by the substrate doping concentration of the chip itself.
Disclosure of Invention
In view of this, an object of the present application is to provide a substrate concentration determining method, a substrate concentration determining apparatus, a computer device, and a readable storage medium, which can determine the matched optimal substrate doping concentration of the chip to be measured, which has the smallest influence on the electrical characteristic measurement result, and improve the measurement accuracy and the measurement stability of the chip to be measured in the electrical characteristic measurement under the state of the optimal substrate doping concentration.
In order to achieve the above object, the embodiments of the present application adopt the following technical solutions:
in a first aspect, the present application provides a substrate concentration determination method, the method comprising:
acquiring capacitance measurement values of to-be-measured chip sets with different substrate doping concentrations, which are measured at test keys with the same capacitance, wherein each to-be-measured chip set comprises a plurality of to-be-measured chips with the same substrate doping concentration;
aiming at each chip group to be detected, calculating the capacitance measurement difference of the chip group to be detected according to the capacitance measurement value of each chip to be detected in the chip group to be detected;
determining the characteristic corresponding relation between the substrate doping concentration of the chip to be measured and the capacitance measurement difference degree according to the capacitance measurement difference degree of the chip group to be measured with different substrate doping concentrations;
and determining the optimal substrate doping concentration of the chip to be tested corresponding to the minimum capacitance measurement difference according to the characteristic corresponding relation.
In an optional embodiment, the step of calculating a capacitance measurement difference of the chipset to be tested according to the capacitance measurement value of each chip to be tested in the chipset to be tested includes:
carrying out average value operation on the capacitance measurement value of each chip to be measured in the chipset to be measured to obtain the capacitance measurement average value of the chipset to be measured;
and performing standard deviation operation on the capacitance measurement value of each chip to be measured in the chipset to be measured according to the capacitance measurement average value to obtain the capacitance measurement difference.
In an alternative embodiment, the method further comprises:
acquiring the electrostatic accumulated electric quantity respectively measured by the chip to be tested at the optimal substrate doping concentration at a plurality of test keys with different capacitances;
and calculating the corresponding electrostatic accumulation value of the chip to be tested under the optimal substrate doping concentration according to the electrostatic accumulation electric quantity measured at the plurality of test keys respectively.
In an optional embodiment, the step of calculating the electrostatic accumulation value corresponding to the chip to be tested at the optimal substrate doping concentration according to the electrostatic accumulation electric quantities respectively measured at the plurality of test keys includes:
determining the electrostatic association relationship between the electrostatic accumulated electric quantity and the test key capacitance according to the electrostatic accumulated electric quantity measured at the plurality of test keys respectively;
and calculating the static accumulation value of the chip to be tested with the optimal substrate doping concentration when the test key capacitance is zero according to the static association relation.
In a second aspect, the present application provides a substrate concentration determining apparatus, comprising:
the device comprises a capacitance measurement acquisition module, a capacitance measurement acquisition module and a capacitance measurement processing module, wherein the capacitance measurement acquisition module is used for acquiring capacitance measurement values measured by chip sets to be tested with different substrate doping concentrations at test keys with the same capacitance, and each chip set to be tested comprises a plurality of chips to be tested with the same substrate doping concentration;
the measurement difference calculation module is used for calculating the capacitance measurement difference of each chip group to be measured according to the capacitance measurement value of each chip to be measured in the chip group to be measured;
the characteristic relation confirming module is used for determining the characteristic corresponding relation between the substrate doping concentration of the chip to be tested and the capacitance measuring difference degree according to the capacitance measuring difference degree of the chip group to be tested with different substrate doping concentrations;
and the optimal doping output module is used for determining the optimal substrate doping concentration of the chip to be tested, which corresponds to the minimum capacitance measurement difference degree, according to the characteristic corresponding relation.
In an alternative embodiment, the metrology difference calculation module comprises:
the capacitance mean value operation submodule is used for carrying out mean value operation on the capacitance measurement value of each chip to be tested in the chipset to be tested to obtain the capacitance measurement mean value of the chipset to be tested;
and the standard deviation calculation submodule is used for performing standard deviation calculation on the capacitance measurement value of each chip to be measured in the chipset to be measured according to the capacitance measurement average value to obtain the capacitance measurement difference.
In an alternative embodiment, the apparatus further comprises:
the electrostatic measurement acquisition module is used for acquiring electrostatic accumulated electric quantity measured by the chip to be tested at the optimal substrate doping concentration at a plurality of test keys with different capacitances;
and the electrostatic effect operation module is used for calculating the corresponding electrostatic accumulation value of the chip to be tested under the optimal substrate doping concentration according to the electrostatic accumulation electric quantity respectively measured at the plurality of test keys.
In an alternative embodiment, the electrostatic effect operation module includes:
the static correlation confirmation submodule is used for determining the static correlation relationship between the static accumulated electric quantity and the capacitance of the test key according to the static accumulated electric quantity measured at the plurality of test keys respectively;
and the static accumulation calculation submodule is used for calculating the static accumulation value of the chip to be tested with the optimal substrate doping concentration when the test key capacitance is zero according to the static association relation.
In a third aspect, the present application provides a computer device comprising a processor and a memory, the memory storing a computer program executable by the processor, the processor being capable of executing the computer program to implement the substrate concentration determination method of any one of the preceding embodiments.
In a fourth aspect, the present application provides a readable storage medium having stored thereon a computer program which, when executed by a processor, implements the substrate concentration determination method of any one of the preceding embodiments.
The beneficial effects of the embodiment of the application include the following:
the method comprises obtaining measured values of capacitances of the test chip sets with different substrate doping concentrations at the test keys with the same capacitance, and determining the substrate doping concentration of each chip set, calculating the capacitance measurement difference of the chipset to be tested according to the capacitance measurement values of the chips to be tested with the same substrate doping concentration in the chipset to be tested, then determining the characteristic corresponding relation between the substrate doping concentration of the chip to be measured and the capacitance measurement difference according to the capacitance measurement difference of the chip group to be measured with different substrate doping concentrations, thereby determining the optimum substrate doping concentration of the chip to be tested corresponding to the minimum capacitance measurement difference according to the characteristic corresponding relation, the influence on the electrical characteristic measurement result is greatly reduced through the optimal substrate doping concentration, and the measurement accuracy and the measurement stability of the chip to be measured in the electrical characteristic measurement under the optimal substrate doping concentration state are improved.
In order to make the aforementioned objects, features and advantages of the present application comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic diagram of a computer device according to an embodiment of the present disclosure;
fig. 2 is a schematic flowchart of a substrate concentration determining method according to an embodiment of the present disclosure;
FIG. 3 is a schematic flowchart illustrating the sub-steps included in step S220 in FIG. 2;
fig. 4 is a second schematic flowchart of a substrate concentration determining method according to an embodiment of the present application;
FIG. 5 is a flowchart illustrating the sub-steps included in step S260 of FIG. 4;
fig. 6 is a schematic composition diagram of a substrate concentration determining apparatus according to an embodiment of the present application;
FIG. 7 is a schematic diagram of the measurement difference calculation module shown in FIG. 6;
FIG. 8 is a second schematic view illustrating a substrate concentration determining apparatus according to an embodiment of the present application;
fig. 9 is a schematic diagram illustrating the electrostatic effect operation module shown in fig. 8.
An icon: 10-a computer device; 11-a memory; 12-a processor; 13-a communication unit; 100-substrate concentration determining means; 110-a capacitance measurement acquisition module; 120-measurement difference calculation module; 130-a characteristic relationship validation module; 140-optimal doping output module; 121-a capacitance mean value operation submodule; 122-standard deviation operation submodule; 150-static measurement acquisition module; 160-electrostatic effect operation module; 161-electrostatic correlation confirmation sub-module; 162-static accumulation calculation submodule.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it is to be understood that relational terms such as the terms first and second, and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a computer device 10 according to an embodiment of the present disclosure. In this embodiment, the computer device 10 may analyze the electrical characteristic measurement data of the same type of chip to be measured under different substrate doping concentrations, so as to determine the optimal substrate doping concentration of the chip to be measured, which has the smallest influence on the final electrical characteristic measurement result, and thus, the probe test device may have better measurement accuracy and measurement stability when performing electrical characteristic measurement on the chip to be measured in the optimal substrate doping concentration state. The computer device 10 may be, but is not limited to, a tablet computer, a notebook computer, a personal computer, and the like.
In the present embodiment, the computer apparatus 10 includes a memory 11, a processor 12, a communication unit 13, and a substrate concentration determination device 100. The various elements of the memory 11, the processor 12 and the communication unit 13 are electrically connected to each other directly or indirectly to realize data transmission or interaction. For example, the memory 11, the processor 12 and the communication unit 13 may be electrically connected to each other through one or more communication buses or signal lines.
In this embodiment, the Memory 11 may be, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Read-Only Memory (EPROM), an electrically Erasable Read-Only Memory (EEPROM), and the like. Wherein, the memory 11 is used for storing a computer program, and the processor 12 can execute the computer program accordingly after receiving the execution instruction.
In this embodiment, the processor 12 may be an integrated circuit chip having signal processing capabilities. The Processor 12 may be a general-purpose Processor including at least one of a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), a Network Processor (NP), a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, and discrete hardware components. The general purpose processor may be a microprocessor or the processor may be any conventional processor or the like that implements or performs the methods, steps and logic blocks disclosed in the embodiments of the present application.
In this embodiment, the communication unit 13 is configured to establish a communication connection between the computer device 10 and other electronic devices through a network, and to send and receive data through the network, where the network includes a wired communication network and a wireless communication network. For example, the computer device 10 may obtain, from the probe device through the communication unit 13, the electrical characteristic parameters obtained by the probe device from testing at the test keys disposed around the chip to be tested.
In the present embodiment, the substrate concentration determining apparatus 100 includes at least one software function module capable of being stored in the memory 11 in the form of software or firmware or being solidified in the operating system of the computer device 10. The processor 12 may be used to execute executable modules stored by the memory 11, such as software functional modules and computer programs included in the substrate concentration determination apparatus 100. The computer device 10 determines the optimum substrate doping concentration, which is the most influential to the electrical characteristic measurement result, for the chip to be measured through the substrate concentration determining apparatus 100, so as to reduce the influence on the electrical characteristic measurement result to the maximum extent through the optimum substrate doping concentration, and improve the measurement accuracy and the measurement stability of the chip to be measured in the electrical characteristic measurement under the optimum substrate doping concentration state.
It is understood that the block diagram shown in fig. 1 is only one constituent schematic diagram of the computer device 10, and that the computer device 10 may also include more or fewer components than shown in fig. 1, or have a different configuration than shown in fig. 1. The components shown in fig. 1 may be implemented in hardware, software, or a combination thereof.
In the present application, in order to ensure that the computer device 10 can determine the optimum substrate doping concentration, which is the minimum influence on the electrical characteristic measurement result, for the chip to be measured, so as to ensure the measurement accuracy and the measurement stability when the chip to be measured performs the electrical characteristic measurement in the optimum substrate doping concentration state, the foregoing object is achieved by providing the substrate concentration determination method according to the embodiment of the present application. The substrate concentration determination method provided in the present application is described in detail below.
Referring to fig. 2, fig. 2 is a schematic flow chart of a substrate concentration determining method according to an embodiment of the present disclosure. In the embodiment of the present application, a specific flow and specific steps of the substrate concentration determination method shown in fig. 2 are as follows.
Step S210, obtaining capacitance measurement values measured at the test keys with the same capacitance of the test chip sets with different substrate doping concentrations, where each test chip set includes a plurality of chips to be tested with the same substrate doping concentration.
In this embodiment, the computer device 10 may obtain, from the probe test device through the communication unit 13, capacitance measurement values of to-be-tested chip sets corresponding to the same type of to-be-tested chips under different substrate doping concentrations, where the capacitance measurement value of each to-be-tested chip set is measured under the action of test keys of the same capacitance, each to-be-tested chip set includes a plurality of to-be-tested chips having the same substrate doping concentration, and the probe pressures applied on the corresponding test keys by the probe test device are the same. Therefore, the computer device 10 can correspondingly obtain the capacitance measurement value measured at the test key with the same capacitance of each chip to be tested in the plurality of chip sets to be tested with different substrate doping concentrations. In an embodiment of this embodiment, in order to ensure that the capacitance measurement value obtained by the computer device 10 is closer to the actual capacitance value of the chip to be tested, an N-type/P-type MOS capacitance test key with an extremely low capacitance value may be selected, and the capacitance value thereof is less than 1 pF.
Step S220 is performed to calculate a capacitance measurement difference of each chipset according to a capacitance measurement value of each chip in the chipset to be tested.
In this embodiment, the capacitance measurement difference is used to indicate a measurement value difference range correspondingly exhibited by a same chip to be tested with the same substrate doping concentration when the electrical characteristic measurement is performed. After obtaining the capacitance measurement value of a chipset to be tested, the computer device 10 determines the capacitance measurement difference between the chips to be tested in the chipset to be tested according to the specific capacitance measurement value of each chip to be tested in the chipset to be tested. The capacitance measurement difference degree can be calculated by adopting a standard deviation calculation formula.
Referring to fig. 3, fig. 3 is a flowchart illustrating sub-steps included in step S220 in fig. 2. In this embodiment, the step S220 may include a sub-step S221 and a sub-step S222.
Step S221, carrying out mean value operation on the capacitance measurement value of each chip to be tested in the chipset to be tested to obtain the capacitance measurement mean value of the chipset to be tested;
in the substep S222, a standard deviation operation is performed on the capacitance measurement value of each chip to be measured in the chipset to be measured according to the capacitance measurement mean value, so as to obtain a capacitance measurement difference.
Therefore, the computer device 10 can determine the distribution of the difference of the measured values when the electrical characteristics of the same chip to be tested with different substrate doping concentrations are measured at the test keys of the same capacitor by performing the substep S221 and the substep S222.
Step S230, determining a characteristic corresponding relationship between the substrate doping concentration of the chip to be tested and the capacitance measurement difference according to the capacitance measurement difference of the chip set to be tested with different substrate doping concentrations.
In this embodiment, after calculating the capacitance measurement difference of each chipset to be tested with different substrate doping concentrations, the computer device 10 may construct an association relationship between the substrate doping concentration and the capacitance measurement difference based on the calculated capacitance measurement difference data corresponding to each chipset to be tested with different substrate doping concentrations, so as to determine a characteristic correspondence relationship between the substrate doping concentration and the capacitance measurement difference of the same chip to be tested. In an implementation manner of this embodiment, the computer device 10 may obtain the characteristic corresponding relationship matching the chip to be tested by determining a fitting curve between capacitance measurement difference data corresponding to the calculated doping concentrations of the different substrates.
Step S240, determining the optimum substrate doping concentration of the chip to be tested corresponding to the minimum capacitance measurement difference according to the characteristic correspondence.
In this embodiment, when the computer device 10 determines the characteristic corresponding relationship between the substrate doping concentration and the capacitance measurement difference of the chip to be measured, the target substrate doping concentration corresponding to the minimum capacitance measurement difference can be determined directly according to the trend of the capacitance measurement difference, which is shown in the characteristic corresponding relationship, that changes with the substrate doping concentration, and then the target substrate doping concentration is used as the optimal substrate doping concentration matched with the chip to be measured, so that the influence on the electrical characteristic measurement result is reduced to the maximum extent by the optimal substrate doping concentration, and the measurement accuracy and the measurement stability of the chip to be measured in the electrical characteristic measurement under the state of the optimal substrate doping concentration are improved.
Therefore, by executing the steps S210 to S240, the best substrate doping concentration that is matched with the chip to be measured and has the smallest influence on the electrical characteristic measurement result is determined for the chip to be measured, so that the influence on the electrical characteristic measurement result is reduced to the greatest extent by the best substrate doping concentration, and the measurement accuracy and the measurement stability of the chip to be measured in the electrical characteristic measurement process under the state of the best substrate doping concentration are improved.
Optionally, referring to fig. 4, fig. 4 is a second schematic flow chart of the substrate concentration determining method according to the embodiment of the present application. In this embodiment, compared with the substrate concentration determining method shown in fig. 2, in the substrate concentration determining method shown in fig. 4, the substrate concentration determining method shown in fig. 4 may further include step S250 and step S260, and the substrate concentration determining method shown in fig. 4 quantitatively analyzes the electrostatic accumulation capability of the chip under test in the state of the optimal substrate doping concentration through the step S250 and the step S260.
Step S250, obtaining the electrostatic accumulated electrical quantities respectively measured at the multiple test keys with different capacitances of the chip to be tested at the optimal substrate doping concentration.
In this embodiment, after the optimal substrate doping concentration matching the chip to be tested is determined, the electrostatic accumulated electric quantity respectively measured at the plurality of test keys with different capacitances of the same chip to be tested in the state of the optimal substrate doping concentration can be obtained from the probing apparatus. The static electricity accumulated quantity is formed by combining the static electricity quantity accumulated by the corresponding test key and the static electricity accumulated value of the chip to be tested in the state of the optimal substrate doping concentration.
Step S260, calculating the electrostatic accumulated value corresponding to the chip to be tested under the optimal substrate doping concentration according to the electrostatic accumulated electric quantities respectively measured at the plurality of test keys.
In this embodiment, since the electrostatic charge accumulation is formed by combining the electrostatic charge accumulated by the corresponding test key and the electrostatic charge accumulation value of the chip under test in the optimum substrate doping concentration state, different test keys have different electrostatic charge accumulation capacities due to different capacitances, so the computer device 10 can calculate the electrostatic charge accumulation value of the chip under test in the optimum substrate doping concentration state according to the composition commonality between the electrostatic charge accumulation measured at different test keys.
Further, referring to fig. 5, fig. 5 is a flowchart illustrating sub-steps included in step S260 in fig. 4. In this embodiment, the step S260 may include a sub-step S261 and a sub-step S262.
In the sub-step S261, the electrostatic association relationship between the electrostatic accumulated electric quantity and the test key capacitance is determined according to the electrostatic accumulated electric quantities respectively measured at the plurality of test keys.
And a substep S262, calculating the electrostatic accumulation value of the chip to be tested with the optimal substrate doping concentration when the test key capacitance is zero according to the electrostatic correlation relationship.
In this embodiment, the electrostatic association relationship between the electrostatic accumulation capacity and the test key capacitance value can be determined by an extrapolation method, and further, the electrostatic accumulation capacity when the test key capacitance is zero can be determined to be the electrostatic accumulation value representing the electrostatic accumulation capability of the chip to be tested under the optimal substrate doping concentration.
Therefore, the electrostatic accumulation capacity of the chip to be measured in the optimal substrate doping concentration state can be quantitatively analyzed by executing the step S250, the step S260 and the substeps 261 to 262, so as to improve the measurement accuracy and the measurement stability when the chip to be measured performs the electrical characteristic measurement in the optimal substrate doping concentration state.
In the present application, in order to ensure that the computer device 10 can execute the above-described substrate concentration determination method by the substrate concentration determination apparatus 100, the present application realizes the aforementioned functions by performing functional block division on the substrate concentration determination apparatus 100. The following describes the specific composition of the substrate concentration determining apparatus 100 provided in the present application.
Alternatively, referring to fig. 6, fig. 6 is a schematic composition diagram of the substrate concentration determining apparatus 100 according to the embodiment of the present disclosure. In an embodiment of the present application, the substrate concentration determining apparatus 100 may include a capacitance measurement obtaining module 110, a measurement difference calculating module 120, a characteristic relation determining module 130, and an optimal doping output module 140.
The capacitance measurement obtaining module 110 is configured to obtain capacitance measurement values measured at test keys with the same capacitance of the chipsets to be tested with different substrate doping concentrations, where each chipset to be tested includes a plurality of chips to be tested with the same substrate doping concentration.
The measurement difference calculating module 120 is configured to calculate, for each chipset to be tested, a capacitance measurement difference of the chipset to be tested according to a capacitance measurement value of each chip to be tested in the chipset to be tested.
The characteristic relationship determination module 130 is configured to determine a characteristic correspondence between the substrate doping concentration of the chip to be tested and the capacitance measurement difference according to the capacitance measurement difference of each of the chipsets to be tested with different substrate doping concentrations.
And an optimal doping output module 140, configured to determine an optimal substrate doping concentration of the chip to be tested, which corresponds to the minimum capacitance measurement difference, according to the characteristic correspondence.
Referring to fig. 7, fig. 7 is a schematic diagram illustrating the measurement difference calculation module 120 in fig. 6. In this embodiment, the measurement difference calculating module 120 may include a capacitance average calculating sub-module 121 and a standard deviation calculating sub-module 122.
The capacitance average value operation submodule 121 is configured to perform an average value operation on the capacitance measurement value of each chip to be tested in the chipset to be tested, so as to obtain a capacitance measurement average value of the chipset to be tested.
The standard deviation calculation submodule 122 is configured to perform standard deviation calculation on the capacitance measurement value of each chip to be measured in the chipset to be measured according to the capacitance measurement average value, so as to obtain a capacitance measurement difference.
Alternatively, referring to fig. 8, fig. 8 is a second schematic composition diagram of the substrate concentration determining apparatus 100 according to the embodiment of the present application. In the embodiment of the present application, the substrate concentration determining apparatus 100 may further include an electrostatic measurement obtaining module 150 and an electrostatic effect calculating module 160.
The static measurement obtaining module 150 is configured to obtain static accumulated electrical quantities respectively measured at a plurality of test keys with different capacitances of the chip to be tested at the optimal substrate doping concentration.
And the electrostatic effect operation module 160 is configured to calculate a corresponding electrostatic accumulation value of the chip to be tested under the optimal substrate doping concentration according to the electrostatic accumulation electric quantities respectively measured at the multiple test keys.
Referring to fig. 9, fig. 9 is a schematic diagram illustrating the electrostatic effect operation module 160 in fig. 8. In this embodiment, the electrostatic effect operation module 160 may include an electrostatic correlation confirming sub-module 161 and an electrostatic accumulation calculating sub-module 162.
The electrostatic association confirming submodule 161 is configured to determine an electrostatic association relationship between the electrostatic accumulated electric quantity and the test key capacitance according to the electrostatic accumulated electric quantities respectively measured at the plurality of test keys.
And the static accumulation calculating submodule 162 is used for calculating the static accumulation value of the chip to be tested with the optimal substrate doping concentration when the test key capacitance is zero according to the static association relation.
It should be noted that the basic principle and the resulting technical effects of the substrate concentration determining apparatus 100 provided in the embodiment of the present application are the same as those of the substrate concentration determining method described above, and for a brief description, reference may be made to the description of the substrate concentration determining method described above for the parts that are not mentioned in this embodiment.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The apparatus embodiments described above are merely illustrative, and for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part. The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a readable storage medium. Based on such understanding, the technical solutions of the present application or portions thereof that contribute to the prior art may be embodied in the form of a software product, which is stored in a readable storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned readable storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk, and various media capable of storing program codes.
In summary, in the substrate concentration determining method, apparatus, computer device and readable storage medium provided by the present application, the present application obtains capacitance measurement values measured at test keys having the same capacitance of the to-be-measured chip sets having different substrate doping concentrations, and calculates a capacitance measurement difference of the to-be-measured chip set according to the capacitance measurement values of the to-be-measured chips having the same substrate doping concentration in the to-be-measured chip set for each to-be-measured chip set, and then determines a characteristic corresponding relationship between the substrate doping concentration of the to-be-measured chip and the capacitance measurement difference according to the capacitance measurement difference of the to-be-measured chip sets having different substrate doping concentrations, so as to determine an optimal substrate doping concentration of the to-be-measured chip corresponding to the minimum capacitance measurement difference according to the characteristic corresponding relationship, so as to reduce the influence on the electrical characteristic measurement result to the greatest extent by the optimal substrate doping concentration, the measurement accuracy and the measurement stability of the chip to be measured in the measurement of the electrical characteristics under the state of the optimal substrate doping concentration are improved.
The above description is only for various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and all such changes or substitutions are included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method of determining a concentration of a substrate, the method comprising:
acquiring capacitance measurement values of to-be-measured chip sets with different substrate doping concentrations, which are measured at test keys with the same capacitance, wherein each to-be-measured chip set comprises a plurality of to-be-measured chips with the same substrate doping concentration;
aiming at each chipset to be tested, calculating the capacitance measurement difference of the chipset to be tested according to the capacitance measurement value of each chip to be tested in the chipset to be tested;
determining the characteristic corresponding relation between the substrate doping concentration of the chip to be measured and the capacitance measurement difference degree according to the capacitance measurement difference degree of the chip group to be measured with different substrate doping concentrations;
and determining the optimal substrate doping concentration of the chip to be tested, which corresponds to the minimum capacitance measurement difference degree, according to the characteristic corresponding relation.
2. The method of claim 1, wherein the step of calculating the capacitance measurement difference of the chipset according to the capacitance measurement value of each chip to be tested in the chipset comprises:
carrying out average value operation on the capacitance measurement value of each chip to be measured in the chipset to be measured to obtain the capacitance measurement average value of the chipset to be measured;
and performing standard deviation operation on the capacitance measurement value of each chip to be measured in the chipset to be measured according to the capacitance measurement average value to obtain the capacitance measurement difference.
3. The method according to claim 1 or 2, characterized in that the method further comprises:
acquiring the electrostatic accumulated electric quantity measured by the chip to be tested at the optimal substrate doping concentration at a plurality of test keys with different capacitances;
and calculating the corresponding electrostatic accumulation value of the chip to be tested under the optimal substrate doping concentration according to the electrostatic accumulation electric quantity measured at the plurality of test keys respectively.
4. The method according to claim 3, wherein the step of calculating the corresponding electrostatic accumulation value of the chip under test at the optimal substrate doping concentration according to the electrostatic accumulation electric quantities measured at the plurality of test keys respectively comprises:
determining the electrostatic association relationship between the electrostatic accumulated electric quantity and the test key capacitance according to the electrostatic accumulated electric quantity measured at the plurality of test keys respectively;
and calculating the static accumulation value of the chip to be tested with the optimal substrate doping concentration when the test key capacitance is zero according to the static association relation.
5. A substrate concentration determining apparatus, characterized in that the apparatus comprises:
the device comprises a capacitance measurement acquisition module, a capacitance measurement acquisition module and a capacitance measurement processing module, wherein the capacitance measurement acquisition module is used for acquiring capacitance measurement values measured by chip sets to be tested with different substrate doping concentrations at test keys with the same capacitance, and each chip set to be tested comprises a plurality of chips to be tested with the same substrate doping concentration;
the measurement difference calculation module is used for calculating the capacitance measurement difference of each chip group to be measured according to the capacitance measurement value of each chip to be measured in the chip group to be measured aiming at each chip group to be measured;
the characteristic relation confirming module is used for determining the characteristic corresponding relation between the substrate doping concentration and the capacitance measurement difference of the chip to be measured according to the capacitance measurement difference of the chip set to be measured with different substrate doping concentrations;
and the optimal doping output module is used for determining the optimal substrate doping concentration of the chip to be tested, which corresponds to the minimum capacitance measurement difference degree, according to the characteristic corresponding relation.
6. The apparatus of claim 5, wherein the metrology difference calculation module comprises:
the capacitance mean value operation submodule is used for carrying out mean value operation on the capacitance measurement value of each chip to be tested in the chipset to be tested to obtain the capacitance measurement mean value of the chipset to be tested;
and the standard deviation calculation submodule is used for performing standard deviation calculation on the capacitance measurement value of each chip to be measured in the chipset to be measured according to the capacitance measurement average value to obtain the capacitance measurement difference.
7. The apparatus of claim 5 or 6, further comprising:
the electrostatic measurement acquisition module is used for acquiring electrostatic accumulated electric quantity respectively measured by the chip to be measured at a plurality of test keys with different capacitances, wherein the chip to be measured is positioned at the optimal substrate doping concentration;
and the electrostatic effect operation module is used for calculating the corresponding electrostatic accumulation value of the chip to be tested under the optimal substrate doping concentration according to the electrostatic accumulation electric quantity respectively measured at the plurality of test keys.
8. The apparatus of claim 7, wherein the electrostatic effect operation module comprises:
the static correlation confirmation submodule is used for determining the static correlation relationship between the static accumulated electric quantity and the capacitance of the test key according to the static accumulated electric quantity measured at the plurality of test keys respectively;
and the static accumulation calculation submodule is used for calculating a static accumulation value of the chip to be tested with the optimal substrate doping concentration when the test key capacitance is zero according to the static association relation.
9. A computer device characterized in that the computer device comprises a processor and a memory, the memory storing a computer program executable by the processor, the processor being capable of executing the computer program to implement the substrate concentration determination method of any one of claims 1 to 4.
10. A readable storage medium on which a computer program is stored, which, when being executed by a processor, carries out the substrate concentration determination method according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011388511.7A CN112366148B (en) | 2020-12-01 | 2020-12-01 | Substrate concentration determination method, substrate concentration determination device, computer equipment and readable storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011388511.7A CN112366148B (en) | 2020-12-01 | 2020-12-01 | Substrate concentration determination method, substrate concentration determination device, computer equipment and readable storage medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112366148A CN112366148A (en) | 2021-02-12 |
| CN112366148B true CN112366148B (en) | 2022-09-06 |
Family
ID=74536518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011388511.7A Active CN112366148B (en) | 2020-12-01 | 2020-12-01 | Substrate concentration determination method, substrate concentration determination device, computer equipment and readable storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112366148B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6326220B1 (en) * | 2000-11-11 | 2001-12-04 | Macronix International Co., Ltd. | Method for determining near-surface doping concentration |
| CN102509725A (en) * | 2011-11-02 | 2012-06-20 | 上海宏力半导体制造有限公司 | Test structure and test method for semiconductor substrate for integrating passive components through monitoring |
| CN105590875A (en) * | 2014-10-21 | 2016-05-18 | 中芯国际集成电路制造(上海)有限公司 | Electrostatic test control wafer and electrostatic test method |
| CN105895548A (en) * | 2016-06-14 | 2016-08-24 | 西安邮电大学 | Grid modulation generation current based method for extracting substrate doping concentration of metal-oxide-semiconductor field-effect transistor (MOSFET) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050110478A1 (en) * | 2003-11-21 | 2005-05-26 | Peng-Cheng Shi | Method and apparatus for detecting electrostatic charges during semiconductor fabrication process |
-
2020
- 2020-12-01 CN CN202011388511.7A patent/CN112366148B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6326220B1 (en) * | 2000-11-11 | 2001-12-04 | Macronix International Co., Ltd. | Method for determining near-surface doping concentration |
| CN102509725A (en) * | 2011-11-02 | 2012-06-20 | 上海宏力半导体制造有限公司 | Test structure and test method for semiconductor substrate for integrating passive components through monitoring |
| CN105590875A (en) * | 2014-10-21 | 2016-05-18 | 中芯国际集成电路制造(上海)有限公司 | Electrostatic test control wafer and electrostatic test method |
| CN105895548A (en) * | 2016-06-14 | 2016-08-24 | 西安邮电大学 | Grid modulation generation current based method for extracting substrate doping concentration of metal-oxide-semiconductor field-effect transistor (MOSFET) |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112366148A (en) | 2021-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5116307B2 (en) | Integrated circuit device abnormality detection device, method and program | |
| CN115656775A (en) | Method and device for testing offset voltage of instrument amplifier | |
| US7557598B2 (en) | Method of inspecting quiescent power supply current in semiconductor integrated circuit and device for executing the method | |
| CN109407043B (en) | Electric energy meter calibration method, device and equipment | |
| CN112366148B (en) | Substrate concentration determination method, substrate concentration determination device, computer equipment and readable storage medium | |
| CN114459525A (en) | Calibration method and device suitable for Hall sensor and storage medium | |
| CN107133328B (en) | Pipeline buried depth precision detection method and device | |
| CN111707867B (en) | Alternating current measuring method and device, electronic equipment and storage medium | |
| CN112540290A (en) | Test method and device for clock frequency calibration, storage medium and terminal | |
| CN110456152B (en) | Method and system for testing resistivity of epitaxial layer and terminal equipment | |
| CN112731815A (en) | Method for improving analog quantity acquisition precision | |
| CN116933979A (en) | Standard sample value setting method based on Bayesian algorithm | |
| CN112731241A (en) | Calibration tool and calibration method for wafer test machine | |
| CN113449422B (en) | Method, device, equipment and storage medium for processing test data | |
| CN115290165A (en) | Detection method, system and device of ultrasonic water meter | |
| CN114035049A (en) | SOH precision calculation method and device and electronic equipment | |
| CN108693164B (en) | Temperature demodulation method, device and system based on optical fiber Raman scattering signal | |
| CN109242354B (en) | Machining effect evaluation method and machining effect evaluation device | |
| CN113030821A (en) | Electric quantity calibration method and device | |
| CN115493724B (en) | Wire harness thermistor detection method, device, resistance detector and storage medium | |
| CN116862269B (en) | Method for evaluating precision of rapid detection method by using big data | |
| CN112000717B (en) | Semiconductor data analysis method, system and computer readable storage medium | |
| JP6304951B2 (en) | Semiconductor device test program, test apparatus, and test method | |
| US11719730B2 (en) | Test method and device for contact resistor | |
| CN115932711B (en) | Data processing method, device and medium for metering reliability of electric energy meter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |