CN112349739A - Semiconductor device, forming method thereof and image sensor - Google Patents
Semiconductor device, forming method thereof and image sensor Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
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- 239000002253 acid Substances 0.000 claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000001312 dry etching Methods 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
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- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052710 silicon Inorganic materials 0.000 abstract description 28
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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Abstract
The invention provides a semiconductor device, a forming method thereof and an image sensor. The forming method of the semiconductor device comprises the following steps: providing a substrate, and forming densely distributed inverted trapezoidal grooves on one side surface of the substrate; carrying out maskless etching and/or maskless ion implantation pretreatment on the substrate to roughen the surface of the inverted trapezoidal groove; and etching the roughened surface of the inverted trapezoidal groove by an acid method to form a suede structure on the roughened surface of the inverted trapezoidal groove. The densely distributed inverted trapezoidal grooves form a large-suede structure on the surface of the substrate, the optical path length in the silicon wafer is expanded, the effective optical path length is prolonged along with the extension in the silicon wafer, and the light absorption efficiency is improved. The surface of the inverted trapezoidal groove forms a suede structure which is a small suede structure, so that the reflection times of light in the substrate are further increased, and the quantum efficiency of the device is greatly improved.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing, and particularly relates to a semiconductor device, a forming method of the semiconductor device and an image sensor.
Background
For silicon-based semiconductor devices (e.g., optoelectronic devices), the surface reflectivity of silicon is high, and if the silicon surface is not treated, the reflectivity of the silicon can reach over 40% for visible light and over 60% for near-infrared light. The crystalline silicon has such a high reflectivity to light that the quantum efficiency of a related photoelectric device prepared by the crystalline silicon is not ideal, and the application field and the use performance of the photoelectric product are finally severely restricted.
The principle of the application of optoelectronic chips is the absorption of light by the material. However, the absorption of light by the material is conditional. Only if the light wave has energy greater than the forbidden band width will the material absorb light. The absorption efficiency of crystalline silicon to photons is gradually reduced from visible light to near infrared light, and even though crystalline silicon has good absorption efficiency to the visible light range of a traditional CMOS Image Sensor (CIS), the problem of photon absorption by silicon becomes more and more prominent as light waves are from visible light to near infrared light, and attention of engineering technicians are paid to the crystalline silicon. The absorption efficiency of the material for photons can be improved by increasing the thickness of silicon, but the increase of the thickness of silicon brings huge challenges to the semiconductor process, and the silicon is not cost-effective. Therefore, it is required to further improve the absorption of light by the semiconductor device.
Disclosure of Invention
The invention aims to provide a semiconductor device, a forming method thereof and an image sensor, which can improve the light absorption efficiency of the semiconductor device and the quantum efficiency of the device.
The invention provides a method for forming a semiconductor device, which comprises the following steps:
providing a substrate, and forming densely distributed inverted trapezoidal grooves on one side surface of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape;
carrying out maskless etching and/or maskless ion implantation pretreatment on the substrate to roughen the surface of the inverted trapezoidal groove;
and etching the roughened surface of the inverted trapezoidal groove by an acid method to form a suede structure on the roughened surface of the inverted trapezoidal groove.
Further, the base angle range of the inverted trapezoid is 110-120 degrees.
Further, the acid etching is performed by using a mixed solution of hydrofluoric acid and nitric acid.
Further, the maskless etching adopts plasma etching, and etching gas includes: SF6、C4F8And Ar, and said SF6The gas flow is 70 sccm-140 sccm, C4F8The gas flow is 75sccm to 100sccm, and the Ar gas flow is 15sccm to 45 sccm.
Furthermore, in the maskless ion implantation, the implantation energy range of the ions is 5 keV-45 keV, and the implantation dosage range of the ions is 5 multiplied by 1014ions/cm2～1×1016ions/cm2。
Further, after the surface of the roughened inverted trapezoidal groove forms a textured structure, the method further comprises:
and forming a filling layer for filling the inverted trapezoidal groove.
Further, after the surface of the roughened inverted trapezoidal groove forms a textured structure, the method further comprises:
forming a first antireflection film layer, a second antireflection film layer and a third antireflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves;
wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer, and the refractive index of the first antireflection film layer are increased in this order.
Furthermore, the densely distributed inverted trapezoidal grooves are distributed in an inverted quadrangular frustum pyramid array.
Further, the forming method of the inverted trapezoid groove comprises the following steps:
forming a patterned photoresist on the surface of the substrate;
and etching the substrate by a dry method by taking the patterned photoresist as a mask to form the inverted trapezoidal groove.
Further, in the dry etching process, the etching gas comprises polymer gas C4F8The polymer gas C4F8Accounts for 15-30% of the total etching gas, and the ratio of the source power to the bias power ranges from 4:1 to 6: 1.
Further, an HK dielectric layer and a first insulating layer are sequentially formed on one side surface of the substrate.
Further, the forming method of the inverted trapezoid groove comprises the following steps:
forming a patterned photoresist on the surface of the first insulating layer;
dry etching the first insulating layer, the HK dielectric layer and the substrate with partial thickness by taking the patterned photoresist as a mask;
forming the inverted trapezoidal groove.
Further, the forming method of the inverted trapezoid groove comprises the following steps:
forming a second insulating layer on one side surface of the substrate;
forming a patterned photoresist on the surface of the second insulating layer;
taking the patterned photoresist as a mask, and performing first dry etching on the second insulating layer to expose the substrate;
and carrying out dry etching on the substrate for the second time to form the inverted trapezoidal groove.
The present invention also provides a semiconductor device comprising:
the device comprises a substrate, wherein inverted trapezoidal grooves which are densely distributed are formed in the surface of one side of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; the surface of the inverted trapezoidal groove is of a suede structure.
Furthermore, the device also comprises a filling layer for filling the inverted trapezoidal groove.
Further, the method also comprises the following steps:
a first anti-reflection film layer, a second anti-reflection film layer and a third anti-reflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves; the third antireflection film layer also fills the inverted trapezoidal groove;
wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer, and the refractive index of the first antireflection film layer are increased in this order.
The present invention also provides an image sensor comprising:
the photoelectric device comprises a substrate, a photoelectric diode and a plurality of inverted trapezoidal grooves, wherein the substrate is provided with a substrate front surface and a substrate back surface which are opposite, the photoelectric diode is formed on one side close to the substrate front surface, and the inverted trapezoidal grooves which are densely distributed are formed on the substrate back surface; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; the surface of the inverted trapezoidal groove is of a suede structure.
Further, the image sensor further includes:
a first anti-reflection film layer, a second anti-reflection film layer and a third anti-reflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves;
wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer, and the refractive index of the first antireflection film layer are increased in this order.
Furthermore, densely distributed pixel unit areas are formed on the substrate, deep groove isolation is distributed between adjacent pixel unit areas, a plurality of inverted trapezoidal grooves are formed in each pixel unit area, the third antireflection film layer also covers the back surface of the substrate, and a color filter layer and a lens layer are sequentially distributed above each pixel unit area;
the color filter layer is positioned above the third antireflection film layer and comprises color filter units which are densely distributed.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a semiconductor device, a forming method thereof and an image sensor; the forming method of the semiconductor device comprises the following steps: providing a substrate, and forming densely distributed inverted trapezoidal grooves on one side surface of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; carrying out maskless etching and/or maskless ion implantation pretreatment on the substrate to roughen the surface of the inverted trapezoidal groove; and etching the roughened surface of the inverted trapezoidal groove by an acid method to form a suede structure on the roughened surface of the inverted trapezoidal groove. The densely distributed inverted trapezoidal grooves form a large-suede structure on the surface of the substrate, the optical path length in the image sensor silicon wafer is expanded, the effective optical path length is prolonged along with the extension in the silicon wafer, and the light absorption efficiency is improved. The surface of the inverted trapezoidal groove forms a suede structure which is a small suede structure, so that the reflection times of light in the substrate are further increased, and the quantum efficiency of the device is greatly improved.
Drawings
Fig. 1 is a flow chart of a method for forming a semiconductor device according to an embodiment of the invention.
FIG. 2 is a schematic diagram of forming an inverted trapezoid trench according to an embodiment of the present invention;
fig. 3 is a schematic view of a textured structure formed on the surface of the inverted trapezoidal groove according to the embodiment of the present invention;
FIG. 4 is a schematic diagram of a filling layer formed in an inverted trapezoid trench according to an embodiment of the invention;
FIG. 5 is a schematic view of a textured structure formed on the surface of an inverted trapezoidal trench in a substrate according to an embodiment of the present invention;
fig. 6a to 6b illustrate a first method for forming an inverted trapezoid trench according to an embodiment of the present invention.
Fig. 7a to 7d illustrate a second method for forming an inverted trapezoid trench according to an embodiment of the present invention.
Fig. 8a to 8c illustrate a third method for forming an inverted trapezoid trench according to an embodiment of the present invention.
Fig. 9a to 9b illustrate a fourth method for forming an inverted trapezoid trench according to an embodiment of the present invention.
Fig. 10a to 10c illustrate a fifth method for forming an inverted trapezoid trench according to an embodiment of the present invention.
Fig. 11 is a schematic structural diagram of the image sensor provided in this embodiment.
Detailed Description
Based on the above research, embodiments of the present invention provide a semiconductor device, a method of forming the same, and an image sensor. The invention is described in further detail below with reference to the figures and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted, however, that the drawings are designed in a simplified form and are not to scale, but rather are to be construed in an illustrative and descriptive sense only and not for purposes of limitation.
An embodiment of the present invention provides a method for forming a semiconductor device, as shown in fig. 1, including:
s1, providing a substrate, and forming densely distributed inverted trapezoidal grooves on one side surface of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape;
s2, performing pretreatment of maskless etching and/or maskless ion implantation on the substrate to roughen the surface of the inverted trapezoidal groove;
s3, performing acid etching on the roughened surface of the inverted trapezoidal groove to form a textured structure on the roughened surface of the inverted trapezoidal groove.
As shown in fig. 2, a substrate 10 is provided, the substrate 10 being, for example, a silicon substrate. A HK (high dielectric constant) dielectric layer 21 and a first insulating layer 22 are sequentially formed on one side surface of the substrate 10, the HK dielectric layer 21 being, for example, at least one of aluminum oxide, hafnium oxide, zirconium oxide, or other HK (high dielectric constant) thin films; the HK dielectric layer 21 can increase the light transmittance of the substrate surface and also reduce the parasitic capacitance. The first insulating layer 22 is, for example, a silicon oxide layer or a silicon nitride layer. Forming densely distributed inverted trapezoidal trenches Va on one side surface of the substrate 10; the inverted trapezoidal trench Va has an inverted trapezoidal cross-sectional shape in a cross section perpendicular to the substrate 10. The range of the bottom angle A of the inverted trapezoid is 110-120 degrees. Specifically, the densely distributed inverted trapezoidal grooves are distributed in an inverted quadrangular frustum pyramid array. The densely distributed inverted trapezoidal grooves form a large-suede structure on the surface of the substrate, so that incident light perpendicular to the substrate irradiates the side faces of the inverted trapezoidal grooves according to Snell's law, enters the substrate through refraction, and then is totally reflected inside the substrate, and the structure greatly reduces the condition that the incident light irradiates the surface of the inverted substrate and is reflected outside the substrate. The optical path length in the silicon chip is expanded, and the effective optical path length is prolonged along with the extension in the substrate, so that the light absorption efficiency is increased. The number of reflection times of light in the substrate is increased, so that the capture capacity of the substrate surface to incident light energy is enhanced, namely, the reflection loss of the light energy is reduced, and the absorption and conversion efficiency of the device to the light is improved.
As shown in fig. 2 and 3, the substrate 10 is subjected to a pretreatment of maskless etching and/or maskless ion implantation to roughen the surface of the inverted trapezoidal trench Va. In the pretreatment process, the maskless etching is plasma etching or non-plasma etching. If the plasma etching is adopted to increase the surface roughness of the silicon wafer, the gas adopted by the plasma etching comprises the following gases: SF6、C4F8And Ar, and said SF6The gas flow is 70 sccm-140 sccm, C4F8The gas flow is 75sccm to 100sccm, and the Ar gas flow is 15sccm to 45 sccm. The pretreatment increases the roughness of the surface of the silicon wafer, and is beneficial to the subsequent etching texturing process by an acid method, so that more small textured structures are formed on the roughened surface of the inverted trapezoidal groove Va, and the generation of black silicon is accelerated. If non-plasma etching is adopted to increase the roughness of the surface of the silicon wafer, the non-plasma etching comprises wet etching, dry etching and etching of physical, chemical and electrochemical methods capable of generating a micro concave-convex structure on the surface of the silicon. In the maskless ion implantation, the substrate 10 is P-type and the ions are phosphorus ions, or the substrate 10 is N-type and the ions are boron ions. The implantation energy of the ions is 5 keV-45 keV, and the implantation dosage of the ions is 5 x 1014ions/cm2～1×1016ions/cm2。
And performing acid etching (acid texturing) on the roughened surface of the inverted trapezoidal groove Va to form a textured structure R, specifically a small textured structure, on the roughened surface of the inverted trapezoidal groove. Illustratively, the acid etching is performed by using a mixed solution of hydrofluoric acid and nitric acid, irregular recesses densely distributed in a direction perpendicular to the substrate are formed on the surface of the inverted trapezoidal groove by using isotropic etching, and a small densely distributed textured structure is formed. Illustratively, the acid mixed solution includes hydrofluoric acid, nitric acid, and deionized water. The mass content of hydrofluoric acid and nitric acid in the acid mixed solution is 10-45% and 15-55%. The substrate 10 is put into the acid mixed solution for texturing, the texturing temperature is, for example, 5 ℃ to 20 ℃, and the texturing time is 80s to 180 s. The method relieves the etching pressure of dry etching, and the prepared black silicon with the inverted trapezoid structure greatly increases the photoelectric conversion efficiency of silicon, does not introduce metal pollution, and is suitable for being applied to semiconductor devices.
Densely distributed inverted trapezoidal trenches are formed on one side surface of the substrate, and the structure is also called as Cell Deep Trench Isolation (CDTI). The surface of the inverted trapezoidal groove forms a suede structure, so that the reflection times of light in the substrate are further increased, and the quantum efficiency of the device is greatly improved. The surface of the substrate (such as a silicon substrate) prepared by the method is generally black, and is generally called as black silicon.
As shown in fig. 4, after the textured structure R is formed on the roughened surface of the inverted trapezoidal groove, the method further includes: a filling layer 30 filling the inverted trapezoidal trench is formed. The filling layer 30 is, for example, a silicon oxide layer 30, and the filling layer 30 may also cover the surface of the first insulating layer 22. Specifically, the filling layer 30 may be formed by a chemical vapor deposition process, and then the filling layer 30 is chemically and mechanically polished, so that the filling layer 30 may be retained to a certain thickness as required.
In other embodiments, after forming the textured structure on the roughened surface of the inverted trapezoidal groove, the method may further include: forming a first antireflection film layer, a second antireflection film layer and a third antireflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves; the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer and the refractive index of the first antireflection film layer are sequentially increased to ensure that light is transmitted from the light-thinning medium to the light-dense medium, so that the incident light reflectivity is reduced to the minimum, and the absorption and conversion efficiency of the semiconductor device to light is improved. The number of the film layers covering the groove can also be four or more, and the specific number of the film layers is not limited and is configured according to actual needs. The refractive index of the film layer covering the inverted trapezoidal groove is gradually reduced outwards from the side wall and the bottom surface of the inverted trapezoidal groove, so that light is guaranteed to enter the optically dense medium from the optically sparse medium, the reflection of the light is reduced by increasing the refraction of the light, the number of the specific film layers is not limited, and the film layer is configured according to actual needs. In the film layers covering the inverted trapezoidal groove, the outermost film layer may further fill the inverted trapezoidal groove, for example, when the film layers covering the inverted trapezoidal groove are three layers, the third antireflection film layer also fills the inverted trapezoidal groove in addition to the second antireflection film layer.
Fig. 5 shows another embodiment, in which no HK (high dielectric constant) dielectric layer and no first insulating layer are disposed on the substrate 10, densely-distributed inverted trapezoidal trenches are formed on the substrate 10, textured structures are formed on the surfaces of the inverted trapezoidal trenches, and the filling layer 30 is formed in the inverted trapezoidal trenches.
The steps of the inverted trapezoidal trench forming method of the semiconductor device of the present embodiment will be described below with reference to fig. 6a to 10 c.
Referring to fig. 6a to 6b, a first method for forming an inverted trapezoid trench according to the present embodiment is described.
As shown in fig. 6a, providing a substrate 10, wherein the substrate 10 is, for example, a silicon substrate, and a patterned photoresist 51 is formed on a surface of the substrate 10; as shown in fig. 6B, the substrate 10 is dry-etched by using the patterned photoresist 51 as a mask to form an inverted trapezoidal trench 41a, the bottom angle a of the inverted trapezoidal trench 41a at the bottom of the trench is in the range of 110 to 120 °, and the side surface inclination angle B of the inverted trapezoidal trench 41a is in the range of 60 to 70 °. The power, pressure, gas and time during the dry etching process are controlled to form the inverted trapezoid trench 41 a. Specifically, the polymer gas C is controlled4F8And the ratio of the source power to the bias power, polymer gas C4F8Accounts for 15-30% of the total etching gas, and the ratio of the source power to the bias power ranges from 4:1 to 6: 1. The first method for forming the inverted trapezoidal trenches adopts dry etching to form the inverted trapezoidal trenches 41a with good absorption to incident light, the densely distributed inverted trapezoidal trenches 41a are densely distributed on the surface of the substrate 10 to form a large matte structure, and the CDTI has good shape uniformity and process controllability.
A second method for forming the inverted trapezoidal trench is described below with reference to fig. 7a to 7 d.
As shown in fig. 7a and 7b, a substrate 10 is provided, and an HK dielectric layer 21 and a first insulating layer 22 are sequentially formed on one side surface of the substrate 10. Forming a patterned first photoresist 52a on the surface of the first insulating layer 22, wherein the patterned first photoresist 52a has a first window; and dry etching the first insulating layer 22 and the HK dielectric layer 21 by using the patterned first photoresist 52a as a mask to expose the substrate 10. As shown in fig. 7c and 7d, a patterned second photoresist 52b is formed on the substrate 10 and the first insulating layer 22, the patterned second photoresist 52b having a second window; the second window is smaller than the first window. The patterned second photoresist 52b on both sides of the second window P at least covers a part of the width of the exposed substrate 10. And dry etching the substrate 10 by taking the patterned second photoresist 52b as a mask to form an inverted trapezoidal groove 42a, wherein the side-face inclination angle C of the inverted trapezoidal groove 42a is in the range of 50-75 degrees, removing the patterned second photoresist 52b, and exposing the top D of the substrate 10 at two sides of the inverted trapezoidal groove 42 a.
In the second method for forming the inverted trapezoid trench, the top D of the substrate 10 at the two sides of the inverted trapezoid trench 42a is exposed by patterning the photoresist twice, i.e. the top D of the substrate 10 at the partial width is not covered by the HK dielectric layer 21, so that the problem of protrusion or brim of the HK dielectric layer 21 due to the etching immobility in the wet etching process when the inverted trapezoid trench structure includes the wet etching process in the subsequent process is avoided. The densely distributed inverted ladder grooves 42a are densely distributed on the substrate 10 to form a large suede structure, and the formed CDTI has good shape uniformity and process controllability.
A method of forming the inverted trapezoidal trench is described below with reference to fig. 8a to 9 b. The forming method of the inverted trapezoidal groove comprises the following steps:
forming a patterned photoresist on the surface of the first insulating layer;
dry etching the first insulating layer, the HK dielectric layer and the substrate with partial thickness by taking the patterned photoresist as a mask;
forming the inverted trapezoidal groove. Specifically, the inverted trapezoidal trench may be formed by two dry etches or one dry etch.
Referring to fig. 8a to 8c, a third method for forming an inverted trapezoid trench is described, in which two dry etches are used to form the inverted trapezoid trench. As shown in fig. 8a to 8c, a substrate 10 is provided, the substrate 10 is, for example, a silicon substrate, and an HK dielectric layer 21 and a first insulating layer 22 are formed on one side surface of the substrate 10. A patterned photoresist 53 is formed on the surface of the first insulating layer 22. And dry etching the first insulating layer 22 and the HK dielectric layer 21 for the first time by using the patterned photoresist 53 as a mask to expose the substrate 10. And performing second dry etching on the substrate 10 to form an inverted trapezoidal groove 43a, wherein the side surface inclination angle D of the inverted trapezoidal groove 43a ranges from 60 degrees to 70 degrees. The third method for forming the reversed trapezoid groove introduces the reversed trapezoid groove formed by two times of dry etching under the condition that the HK dielectric layer is arranged on the substrate.
Referring to fig. 9a and 9b, a fourth method for forming an inverted trapezoid trench is described, in which an inverted trapezoid trench is formed by one dry etching. As shown in fig. 9a and 9b, a substrate 10 is provided, the substrate 10 is, for example, a silicon substrate, and an HK dielectric layer 21 and a first insulating layer 22 are formed on one side surface of the substrate 10. Forming a patterned photoresist 54 on the surface of the first insulating layer 22, and etching the first insulating layer 22, the HK dielectric layer 21 and the substrate 10 with a partial thickness by using the patterned photoresist 54 as a mask to form an inverted trapezoidal trench 44a, wherein the side surface inclination angle D of the inverted trapezoidal trench 44a is in the range of 60-70 °. Specifically, the inverted trapezoid trench 44a is formed by controlling the power, pressure, gas and time during the dry etching process. Controlling the polymer gas C4F8And the ratio of the source power to the bias power, polymer gas C4F8Accounts for 15-30% of the total etching gas, and the ratio of the source power to the bias power ranges from 4:1 to 6: 1.
The fourth method for forming the inverted trapezoidal groove introduces that the inverted trapezoidal groove is formed by one-time dry etching under the condition that the HK dielectric layer is arranged on the substrate. The densely distributed inverted trapezoidal grooves 44a are densely distributed on the surface of the substrate 10 to form a large suede structure, and simultaneously, a substrate interface inclination angle with good incident light absorption rate is formed, so that the reflectivity of incident light is reduced to the maximum extent, and the performance of a semiconductor device is improved.
A fifth method for forming an inverted trapezoidal trench is described below with reference to fig. 10a to 10 c.
As shown in fig. 10a to 10c, a substrate 10 is provided, the substrate 10 is, for example, a silicon substrate, a second insulating layer 23 is formed on one side surface of the substrate 10, and the second insulating layer 23 is, for example, a silicon oxide layer or a silicon nitride layer. A patterned photoresist 55 is formed on the surface of the second insulating layer 23. And dry etching the second insulating layer 23 to expose the substrate 10 by using the patterned photoresist 55 as a mask. And dry etching the substrate 10 to form an inverted trapezoidal groove 45a, wherein the side surface inclination angle D of the inverted trapezoidal groove 45a ranges from 60 degrees to 70 degrees.
The fifth method for forming the reversed trapezoid groove introduces that the reversed trapezoid groove is formed by adopting two dry etching processes under the condition that no HK dielectric layer is arranged on the substrate.
The present embodiment also provides a semiconductor device including:
the device comprises a substrate, wherein inverted trapezoidal grooves which are densely distributed are formed in the surface of one side of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; the surface of the inverted trapezoidal groove is of a suede structure.
Specifically, the semiconductor device further includes: a first anti-reflection film layer, a second anti-reflection film layer and a third anti-reflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves; the third antireflection film layer also fills the inverted trapezoidal groove;
wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer, and the refractive index of the first antireflection film layer are increased in this order.
Fig. 11 is a schematic structural diagram of the image sensor provided in this embodiment. As shown in fig. 11, the present embodiment also provides an image sensor including:
a substrate 60, the substrate 60 havingOpposite substrate front side f1And a substrate back surface f2Near the front side f of the substrate1A photodiode is formed on one side, and inverted trapezoidal grooves V which are densely distributed are formed on the back surface of the substrate; on a cross section perpendicular to the substrate 60, the cross-sectional shape of the inverted trapezoidal trench V is inverted trapezoidal; the surface of the inverted trapezoidal groove V is of a suede structure.
The image sensor further includes: a first antireflection film layer (not shown), a second antireflection film layer (not shown), and a third antireflection film layer 63 which cover the surfaces of the inverted trapezoidal grooves in this order; wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer and the refractive index of the first antireflection film layer are increased in sequence; the transmission of light is ensured to be from the light sparse medium to the light dense medium, so that the reflectivity of incident light is reduced to the minimum, and the absorption and conversion efficiency of the semiconductor device to light is improved. The number of the film layers covering the trench may also be four or more, and the specific number of the film layers is not limited and is configured according to the actual requirement.
Specifically, the third antireflection film layer 63 further covers the back surface f of the substrate2(ii) a The substrate 60 is formed with densely distributed pixel unit areas a, deep trench isolations 66 are distributed between adjacent pixel unit areas a, and the deep trench isolations 66 with low refractive index are used between pixels to suppress lateral crosstalk. A plurality of inverted trapezoidal grooves V are formed in each pixel unit region a, and a color filter layer 64 and a lens layer 65 are sequentially distributed above the third antireflection film layer 63 in each pixel unit region. The color filter layer 64 is positioned above the third antireflection film layer 63, and the color filter layer includes color filter units densely distributed; the lens layer 65 is positioned above the color filter layer 64, and the lens layer 65 includes densely distributed microlenses; wherein the color filter units, the microlenses and the pixel unit regions correspond one-to-one in a direction perpendicular to the substrate. Front side f of the substrate1 A dielectric layer 67 is formed on one side, and a metal layer 68 is distributed in the dielectric layer 67.
The image sensor provided by the embodiment has very low reflectivity and high absorption efficiency. The densely distributed inverted trapezoidal grooves V form a large-suede structure on the surface of the substrate, the optical path length in the image sensor silicon wafer is expanded, the effective optical path length is prolonged along with the extension in the silicon wafer, and the light absorption efficiency is improved. The surface of the inverted trapezoidal groove V is of a small suede structure, so that the reflection times of light in the substrate are further increased, and the quantum efficiency of the device is greatly improved.
In summary, the present invention provides a semiconductor device, a method of forming the same, and an image sensor; the forming method of the semiconductor device comprises the following steps: providing a substrate, and forming densely distributed inverted trapezoidal grooves on one side surface of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; carrying out maskless etching and/or maskless ion implantation pretreatment on the substrate to roughen the surface of the inverted trapezoidal groove; and etching the roughened surface of the inverted trapezoidal groove by an acid method to form a suede structure on the roughened surface of the inverted trapezoidal groove. The densely distributed inverted trapezoidal grooves form a large-suede structure on the surface of the substrate, the optical path length in the image sensor silicon wafer is expanded, the effective optical path length is prolonged along with the extension in the silicon wafer, and the light absorption efficiency is improved. The surface of the inverted trapezoidal groove forms a suede structure which is a small suede structure, so that the reflection times of light in the substrate are further increased, and the quantum efficiency of the device is greatly improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the method disclosed by the embodiment, the description is relatively simple because the method corresponds to the device disclosed by the embodiment, and the relevant points can be referred to the description of the method part.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (19)
1. A method of forming a semiconductor device, comprising:
providing a substrate, and forming densely distributed inverted trapezoidal grooves on one side surface of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape;
carrying out maskless etching and/or maskless ion implantation pretreatment on the substrate to roughen the surface of the inverted trapezoidal groove;
and etching the roughened surface of the inverted trapezoidal groove by an acid method to form a suede structure on the roughened surface of the inverted trapezoidal groove.
2. The method for forming a semiconductor device according to claim 1, wherein a bottom angle of the inverted trapezoidal trench ranges from 110 ° to 120 °.
3. The method for forming a semiconductor device according to claim 1, wherein the acid etching is etching using a mixed solution of hydrofluoric acid and nitric acid.
4. The method of forming a semiconductor device according to claim 1, wherein the maskless etching employs plasma etching, and etching gas includes: SF6、C4F8And Ar, and said SF6The gas flow is 70 sccm-140 sccm, C4F8The gas flow is 75sccm to 100sccm, and the Ar gas flow is 15sccm to 45 sccm.
5. The method of claim 1, wherein the maskless ion implantation has an implantation energy of 5keV to 45keV and an implantation dose of 5 x 1014ions/cm2～1×1016ions/cm2。
6. The method of forming a semiconductor device according to claim 1, further comprising, after forming a textured structure on the roughened surface of the inverted trapezoidal trench:
and forming a filling layer for filling the inverted trapezoidal groove.
7. The method of forming a semiconductor device according to claim 1, further comprising, after forming a textured structure on the roughened surface of the inverted trapezoidal trench:
forming a first anti-reflection film layer, a second anti-reflection film layer and a third anti-reflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves; wherein the refractive indices of the third anti-reflection film layer, the second anti-reflection film layer and the first anti-reflection film layer are sequentially increased.
8. The method of claim 1, wherein the densely distributed inverted trapezoidal trenches are distributed in an inverted square pyramid array.
9. The method for forming a semiconductor device according to any one of claims 1 to 8, wherein the method for forming the inverted trapezoidal trench includes:
forming a patterned photoresist on the surface of the substrate;
and etching the substrate by a dry method by taking the patterned photoresist as a mask to form the inverted trapezoidal groove.
10. The method for forming a semiconductor device according to claim 9, wherein in the dry etching process, the etching gas includes a polymer gas C4F8The polymer gas C4F8Accounts for 15-30% of the total etching gas, and the ratio of the source power to the bias power ranges from 4:1 to 6: 1.
11. The method for forming a semiconductor device according to any one of claims 1 to 8, wherein an HK dielectric layer and a first insulating layer are formed on one side surface of the substrate in this order.
12. The method for forming a semiconductor device according to claim 11, wherein the method for forming the inverted trapezoidal trench comprises:
forming a patterned photoresist on the surface of the first insulating layer;
dry etching the first insulating layer, the HK dielectric layer and the substrate with partial thickness by taking the patterned photoresist as a mask;
forming the inverted trapezoidal groove.
13. The method for forming a semiconductor device according to any one of claims 1 to 8, wherein the method for forming the inverted trapezoidal trench includes:
forming a second insulating layer on one side surface of the substrate;
forming a patterned photoresist on the surface of the second insulating layer;
taking the patterned photoresist as a mask, and performing first dry etching on the second insulating layer to expose the substrate;
and carrying out dry etching on the substrate for the second time to form the inverted trapezoidal groove.
14. A semiconductor device, comprising:
the device comprises a substrate, wherein inverted trapezoidal grooves which are densely distributed are formed in the surface of one side of the substrate; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; the surface of the inverted trapezoidal groove is of a suede structure.
15. The semiconductor device according to claim 14, further comprising a filling layer filling the inverted trapezoidal trench.
16. The semiconductor device according to claim 14, further comprising:
a first anti-reflection film layer, a second anti-reflection film layer and a third anti-reflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves; the third antireflection film layer also fills the inverted trapezoidal groove;
wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer, and the refractive index of the first antireflection film layer are increased in this order.
17. An image sensor, comprising:
the photoelectric device comprises a substrate, a photoelectric diode and a plurality of inverted trapezoidal grooves, wherein the substrate is provided with a substrate front surface and a substrate back surface which are opposite, the photoelectric diode is formed on one side close to the substrate front surface, and the inverted trapezoidal grooves which are densely distributed are formed on the substrate back surface; on a cross section vertical to the substrate, the cross section of the inverted trapezoidal groove is in an inverted trapezoidal shape; the surface of the inverted trapezoidal groove is of a suede structure.
18. The image sensor of claim 17, further comprising:
a first anti-reflection film layer, a second anti-reflection film layer and a third anti-reflection film layer which sequentially cover the surfaces of the inverted trapezoidal grooves;
wherein the refractive index of the third antireflection film layer, the refractive index of the second antireflection film layer, and the refractive index of the first antireflection film layer are increased in this order.
19. The image sensor of claim 17,
the substrate is provided with densely distributed pixel unit areas, deep groove isolation is distributed between adjacent pixel unit areas, a plurality of inverted trapezoidal grooves are formed in each pixel unit area, the third antireflection film layer further covers the back face of the substrate, and a color filter layer and a lens layer are sequentially distributed above each pixel unit area.
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