CN112349701A - Semiconductor substrate and method for manufacturing the same - Google Patents
Semiconductor substrate and method for manufacturing the same Download PDFInfo
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- CN112349701A CN112349701A CN201910724774.1A CN201910724774A CN112349701A CN 112349701 A CN112349701 A CN 112349701A CN 201910724774 A CN201910724774 A CN 201910724774A CN 112349701 A CN112349701 A CN 112349701A
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000005259 measurement Methods 0.000 claims description 87
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a semiconductor substrate and a preparation method thereof, wherein the preparation method comprises the following steps: providing a substrate, wherein the substrate comprises a functional area and a measuring area; and forming at least one functional film layer in the functional area of the substrate by adopting the same process steps, forming at least one measuring film layer in the measuring area, wherein the measuring film layer is divided into at least one measuring unit in the overlooking direction, the measuring unit is in a polygon shape, and the internal angle of the polygon is larger than 90 degrees. In the process for preparing the semiconductor substrate, the polygonal measuring unit is formed in the measuring area, and the measuring unit in the shape is small in stress moment, not easy to fall off and not capable of becoming a defect source, so that the measuring unit is prevented from influencing the processing quality and the final yield of the semiconductor substrate; meanwhile, the stress distribution of the polygonal measuring unit is relatively more uniform, and the structure is more stable.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor substrate and a preparation method thereof.
Background
In the process of manufacturing a semiconductor substrate, various treatments are often performed on a substrate having an insulating film by using an etching liquid having etching properties. For example, a method of processing a semiconductor substrate with an SPM (sulfuric acid/hydrogen peroxide mixture) chemical is disclosed in the related art.
In the manufacturing process of semiconductor substrates, the measurement unit is used to simulate the behavior of an Array (Array) region or an edge (peripheral) region, on which the critical dimension of the manufacturing process can be measured and monitored, which is very significant.
However, the measurement cells may become a source of defects, affecting process quality and ultimately yield. Therefore, designing a semiconductor substrate with reasonable measurement units is an effective way to avoid defect generation.
Disclosure of Invention
The present invention is directed to a semiconductor substrate and a method for manufacturing the same, which can prevent a measurement unit from falling off, and improve the process quality and the final yield of the semiconductor substrate.
In order to solve the above problems, the present invention provides a method for manufacturing a semiconductor substrate, the method comprising the steps of: providing a substrate, wherein the substrate comprises a functional area and a measuring area; and forming at least one functional film layer in the functional area of the substrate by adopting the same process steps, forming at least one measuring film layer in the measuring area, wherein the measuring film layer is divided into at least one measuring unit in the overlooking direction, the measuring unit is in a polygon shape, and the internal angle of the polygon is larger than 90 degrees.
Further, the polygon is a regular polygon.
Further, the polygon is a regular octagon.
Further, the measurement region is disposed at an edge of the functional region.
Further, the measurement film layer is divided into a plurality of measurement units, and the measurement units are arranged in a matrix.
Further, the measurement film layer is divided into a plurality of measurement units, which are independent of each other.
Further, the method of forming the measurement unit in the measurement region includes the steps of: providing a mask plate, wherein a region of the mask plate corresponding to the measuring unit is provided with a polygonal opening, and the inner angle of the polygonal opening is greater than 90 degrees; in the step of forming a measurement film layer, the measurement film layer is deposited through the polygonal openings to form the measurement cell.
The invention also provides a semiconductor substrate which comprises a functional area and a measuring area, wherein the functional area is provided with at least one functional film layer, the measuring area is provided with at least one measuring film layer, the measuring film layer is divided into at least one measuring unit in the overlooking direction, the measuring unit is in a polygon shape, and the internal angle of the polygon is larger than 90 degrees.
The invention has the advantages that in the process of preparing the semiconductor substrate, the polygonal measuring unit is formed in the measuring area, the stress moment of the measuring unit in the shape is small, the measuring unit is not easy to fall off and can not become a defect source, thereby preventing the measuring unit from influencing the process quality and the final yield of the semiconductor substrate; meanwhile, the stress distribution of the polygonal measuring unit is relatively more uniform, and the structure is more stable.
Drawings
FIG. 1 is a schematic step diagram illustrating a method for fabricating a semiconductor substrate according to one embodiment of the present invention;
fig. 2A to 2C are process flow diagrams of a method for manufacturing a semiconductor substrate according to an embodiment of the present invention, wherein fig. 2A and 2C are schematic top views, and fig. 2B is a schematic side view;
FIG. 3 is a schematic top view of another embodiment of a method for fabricating a semiconductor substrate according to the present invention;
FIG. 4 is a schematic top view of a measurement unit of a semiconductor substrate;
FIG. 5 is a scanning electron micrograph at a corner of a measuring cell having a quadrilateral shape;
FIG. 6A is a schematic top view of a semiconductor substrate with a square measuring unit after an etching process is performed on a measuring region of the semiconductor substrate;
FIG. 6B is a schematic side view of the structure of FIG. 6A;
FIG. 7A is a schematic top view of a semiconductor substrate with a regular octagonal measuring unit after an etching process is performed on a measuring region of the semiconductor substrate;
FIG. 7B is a schematic side view of the structure of FIG. 7A;
fig. 8 is a schematic plan view of a semiconductor substrate.
Detailed Description
The following describes in detail a semiconductor substrate and a method for manufacturing the same according to the present invention with reference to the accompanying drawings.
FIG. 1 is a schematic step diagram of a method for manufacturing a semiconductor substrate according to an embodiment of the present invention. Referring to fig. 1, the method for manufacturing a semiconductor substrate of the present invention includes the following steps: step S10, providing a substrate, wherein the substrate comprises a functional area and a measuring area; step S11, forming at least one functional film layer in the functional area of the substrate by the same process steps, and forming at least one measurement film layer in the measurement area, wherein the measurement film layer is divided into at least one measurement unit in the top view direction, the measurement unit is in the shape of a polygon, and the internal angle of the polygon is greater than 90 degrees.
Fig. 2A to 2C are process flow diagrams of a method for manufacturing a semiconductor substrate according to an embodiment of the invention, wherein fig. 2A and 2C are schematic top views, and fig. 2B is a schematic side view.
Referring to step S10 and fig. 2A, a substrate 100 is provided, the substrate 100 includes a functional region a and a measurement region B.
The substrate 100 includes, but is not limited to, a silicon-based substrate, a glass substrate, or a flexible substrate.
In this embodiment, the semiconductor substrate includes a functional region a and a measurement region B, and the measurement region B is disposed at an edge of the functional region a. In another embodiment of the present invention, as shown in fig. 3, the semiconductor substrate of the present invention includes a plurality of functional regions a and a plurality of measuring regions B, wherein one functional region a corresponds to one or more measuring regions B.
Referring to step S11 and fig. 2B, at least one functional film 101 is formed in the functional region a of the substrate 100, and at least one measurement film 102 is formed in the measurement region B by the same process steps. Specifically, in the present embodiment, only four functional films 101 and four measurement films 102 are schematically illustrated in fig. 2B. The number of the functional film 101 and the number of the measuring film 102 are not limited in the present invention, and may be determined according to the manufacturing process of the semiconductor substrate.
In this step, the functional film 101 and the measurement film 102 are formed by the same process step, which means that the functional film 101 and the measurement film 102 are formed by deposition in the same process step, and are also formed by photolithography and etching in the same step. For example, in fig. 2B, after four functional films 101 and four measurement films 102 are formed by the same deposition process, part of the functional films 101 and part of the measurement films 102 are removed by the same photolithography and etching processes.
In the present invention, the functional film 101 and the measurement film 102 are formed by the same process steps, and the measurement region B simulates the behavior of the Array (Array) region or the edge (peripheral) region of the corresponding functional region a, and the critical dimension of the process can be measured and monitored in the measurement region B, so that the critical dimension of the process in the functional region a can be obtained.
Referring to fig. 2C, in a top view, the measurement film 102 is divided into at least one measurement unit 110. In this embodiment, the measurement film layer 102 is divided into a plurality of measurement units 110, and the measurement units 110 are arranged in a matrix. Specifically, the measurement units 110 are sequentially arranged along the edge of the functional region a. Preferably, the measurement units 110 are independent of each other to facilitate measuring and monitoring critical dimensions of the process.
Fig. 4 is a schematic top view of the measurement unit, and referring to fig. 4, in a top view direction (i.e., a direction perpendicular to the semiconductor substrate), the measurement unit 110 is shaped as a polygon, and an inner angle α of the polygon is greater than 90 degrees, i.e., the inner angle of the polygon is an obtuse angle.
Preferably, the measuring unit 110 is shaped as a regular polygon in a top view, which can further prevent the corners of the measuring unit 110 from falling off during the manufacturing process. In the present embodiment, the measuring unit 110 has a regular octagon shape in a top view, and an internal angle α thereof is 135 degrees.
Preferably, the measuring unit 110 is directly formed in a polygonal shape during the process of forming the measuring film layer 102. Specifically, in the present embodiment, the method of forming the polygonal measurement unit 110 in the measurement region B is to form the measurement unit 110 using a mask having polygonal openings. Specifically, a mask plate is provided, and a region of the mask plate corresponding to the measurement unit 110 has a polygonal opening, wherein an internal angle of the polygonal opening is greater than 90 degrees, and the polygonal opening can be formed on the mask plate by a photoetching and etching method; in the step of forming the measurement film layer 102, the measurement film layer 102 is deposited through the polygonal opening to form the measurement unit 110. It is understood that, in the functional region a, the mask plate also has patterned openings to form the functional film layer 101.
FIG. 5 is a scanning electron micrograph at a corner of a measuring cell having a quadrilateral shape. Referring to fig. 5, from the sem image, the inventors found that during the fabrication of the semiconductor substrate, the corners of the measuring unit are easily detached (as indicated by the arrows in fig. 5), the measuring unit is damaged, and the damaged measuring unit becomes a defect source, which affects the process quality and the final yield of the semiconductor substrate. The polygonal measuring unit 110 of the present invention has the advantages of difficult peeling of the corners, no defect source, and no influence on the process quality and the final yield of the semiconductor substrate.
The advantages of the semiconductor substrate manufacturing method of the present invention will be described below by taking the shape of the measurement cell as a regular quadrangle and a regular octagon as an example.
Fig. 6A is a schematic top view of a semiconductor substrate measurement area with a square measurement unit, after an etching process is performed on the semiconductor substrate measurement area, fig. 6B is a schematic side view of fig. 6A, fig. 7A is a schematic top view of the semiconductor substrate measurement area with a square measurement unit, after an etching process is performed on the semiconductor substrate measurement area, and fig. 7B is a schematic side view of fig. 7A. Only two measurement layers, i.e., a top layer and an insulating layer (i.e., an etched layer) below the top layer, are schematically illustrated, wherein the insulating layer is illustrated in fig. 6A and 7A using dashed boxes and shading.
Referring to fig. 6A, fig. 6B, fig. 7A and fig. 7B, in a semiconductor manufacturing process, the insulating layers 601 and 701 need to be etched, and after etching, the most protruding dimensions of the measurement units in the regular quadrilateral shape and the measurement units in the regular octagonal shape are corners. Assuming that the etching depth of the insulating layer is L, the distance from the corner of the insulating layer 601 to the corner of the top layer 600 after etching is Δ L1, and the distance from the corner of the insulating layer 701 to the corner of the top layer 700 is Δ L2. In addition, Δ L1 is 1.414L, and Δ L2 is 1.08L, and it can be seen that Δ L1> Δ L2 at the same etching depth. This shows that, when the etching gas flows during the process to cause the film layer of the measuring unit to be stressed, the moment of stress of the regular octagonal measuring unit is smaller under the same stress condition, and the regular octagonal measuring unit is not easy to fall off and cannot become a defect source, thereby preventing the measuring unit from affecting the process quality and the final yield of the semiconductor substrate. In addition, the inner angles of the regular quadrilateral measuring units are right angles, the inner angles of some polygons have acute angles, stress concentration is more easily caused when the inner angles of the polygons are acute angles or right angles, and the inner angles of the regular octagonal measuring units are obtuse angles, so that stress distribution is relatively uniform, and the structure is more stable.
The invention also provides a semiconductor substrate prepared by the preparation method. Fig. 8 is a schematic plan view of a semiconductor substrate. Referring to fig. 8, the semiconductor substrate includes a functional region a and a measurement region B. In the direction perpendicular to the semiconductor substrate, the functional region a has at least one functional film layer, and the measurement region B has at least one measurement film layer. In the top view direction, the measurement film is divided into at least one measurement unit 800. In this embodiment, the measurement film is divided into a plurality of measurement units 800. The measuring unit 800 is shaped as a polygon, and the inner angle α of the polygon is greater than 90 degrees. Preferably, referring to fig. 4, in the present embodiment, the shape of the measurement unit 800 is a regular octagon, and an inner angle α of the regular octagon is 135 degrees.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (13)
1. A method for manufacturing a semiconductor substrate is characterized by comprising the following steps:
providing a substrate, wherein the substrate comprises a functional area and a measuring area;
and forming at least one functional film layer in the functional area of the substrate by adopting the same process steps, forming at least one measuring film layer in the measuring area, wherein the measuring film layer is divided into at least one measuring unit in the overlooking direction, the measuring unit is in a polygon shape, and the internal angle of the polygon is larger than 90 degrees.
2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the polygon is a regular polygon.
3. The method for manufacturing a semiconductor substrate according to claim 1, wherein the polygon is a regular octagon.
4. The method for manufacturing a semiconductor substrate according to claim 1, wherein the measurement region is provided at an edge of the functional region.
5. The method of claim 1, wherein the measurement film is divided into a plurality of measurement units, and the measurement units are arranged in a matrix.
6. The method of claim 1, wherein the measurement film layer is divided into a plurality of measurement units, and the measurement units are independent of each other.
7. The method for manufacturing a semiconductor substrate according to claim 1, wherein the method for forming the measurement unit in the measurement region comprises the steps of:
providing a mask plate, wherein a region of the mask plate corresponding to the measuring unit is provided with a polygonal opening, and the inner angle of the polygonal opening is greater than 90 degrees;
in the step of forming a measurement film layer, the measurement film layer is deposited through the polygonal openings to form the measurement cell.
8. The semiconductor substrate is characterized by comprising a functional area and a measuring area, wherein the functional area is provided with at least one functional film layer, the measuring area is provided with at least one measuring film layer, the measuring film layer is divided into at least one measuring unit in the overlooking direction, the measuring unit is in a polygon shape, and the internal angle of the polygon is larger than 90 degrees.
9. The semiconductor substrate according to claim 8, wherein the polygon is a regular polygon.
10. The semiconductor substrate according to claim 8, wherein the polygon is a regular octagon.
11. The semiconductor substrate according to claim 8, wherein the measurement region is provided at an edge of the functional region.
12. The semiconductor substrate of claim 8, wherein the measurement film layer is divided into a plurality of measurement units, and the measurement units are arranged in a matrix.
13. The semiconductor substrate of claim 8, wherein the measurement film layer is divided into a plurality of measurement units, the measurement units being independent of each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724774.1A CN112349701A (en) | 2019-08-07 | 2019-08-07 | Semiconductor substrate and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724774.1A CN112349701A (en) | 2019-08-07 | 2019-08-07 | Semiconductor substrate and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112349701A true CN112349701A (en) | 2021-02-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910724774.1A Pending CN112349701A (en) | 2019-08-07 | 2019-08-07 | Semiconductor substrate and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112349701A (en) |
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2019
- 2019-08-07 CN CN201910724774.1A patent/CN112349701A/en active Pending
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