CN112346305A - Level measurement device, photoetching equipment and method for measuring surface flatness of wafer - Google Patents
Level measurement device, photoetching equipment and method for measuring surface flatness of wafer Download PDFInfo
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- CN112346305A CN112346305A CN201910735452.7A CN201910735452A CN112346305A CN 112346305 A CN112346305 A CN 112346305A CN 201910735452 A CN201910735452 A CN 201910735452A CN 112346305 A CN112346305 A CN 112346305A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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Abstract
The invention relates to a horizontal measuring device with higher measurement accuracy of surface flatness, photoetching equipment and a method for measuring the surface flatness of a wafer, wherein the method comprises the following steps: acquiring layout information of a wafer to be detected; obtaining the size of an exposure area according to the layout information; selecting at least one sensor assembly from a horizontal sensor group according to the size of the exposure area to form a horizontal sensor; the horizontal sensor group comprises sensor components with different sizes; and measuring the surface flatness of the wafer to be measured through the horizontal sensor. The invention can obtain the level sensor with the measurement size matched with the exposure area size, and then the level sensor is used for measuring the flatness of the surface of the wafer. Therefore, the measuring size of the horizontal sensor of the photoetching equipment is adjustable, an operator can measure the wafer by using the horizontal sensor matched with the size of the exposure area, and the measuring accuracy is higher.
Description
Technical Field
The invention relates to photoetching in a semiconductor manufacturing process, in particular to a horizontal measuring device and photoetching equipment, and further relates to a method for measuring the surface flatness of a wafer.
Background
A lithographic apparatus is a machine used to transfer a desired pattern onto a Wafer (Wafer). The pattern transfer is usually achieved by making a desired pattern on a Mask (Mask), exposing the pattern on the Mask to a photosensitive material (e.g., Photoresist) coated on the surface of the wafer using a photolithography apparatus, and then etching the desired pattern on the wafer using an etching process using the patterned photosensitive material as a barrier layer.
In order to accurately transfer a pattern onto a wafer, before exposing (photoresist on) the wafer using a lithographic apparatus, it is necessary to measure the flatness of the wafer surface to determine an optimal exposure focus when exposing a target area (i.e., an exposure area) so that the surface of the exposure area is positioned on or near a focal plane.
A level sensor may be used to measure the flatness of the wafer surface. However, in practical production, the inventor finds that, for integrated circuits with different layouts (layout), flatness measured by using a traditional level sensor has precision deviation, that is, the product measurement result of some layouts is more accurate, and the product measurement result of some layouts has larger error.
Disclosure of Invention
Accordingly, there is a need for a level measuring device, a lithographic apparatus and a method for measuring the surface flatness of a wafer with high accuracy.
A leveling device comprising: the device comprises an object stage and a level sensor, wherein the level sensor is used for measuring the flatness of the surface of an object carried on the object stage, the level sensor comprises at least one sensor component selected from a level sensor group, and the level sensor group comprises sensor components with different sizes.
In one embodiment, each sensor element of the horizontal sensor group is an optical sensor, and the exit light paths of different sensor elements of the horizontal sensor group are parallel to each other.
In one embodiment, the level sensor is configured to measure a flatness of a surface of a wafer carried on the stage, and each sensor element of the level sensor includes: the projection module is used for projecting the measuring beam to the surface of an object carried on the object stage so as to form a measuring light spot on the surface of the object; the detection module is used for receiving the measuring light beam reflected by the surface of the object; and the processing module is used for obtaining the flatness of the surface of the object according to the measuring beam received by the detection module.
In one embodiment, the measurement size of the measurement light spot formed by the level sensor is matched with the size of an exposure area of an area to be exposed on the surface of the wafer.
In one embodiment, the detection module comprises a detection grating for splitting the measuring beam reflected by the object into a first beam and a second beam, the detection module further comprising a first light receiver for receiving the first beam and a second light receiver for receiving the second beam.
In one embodiment, the projection module includes a light source and a projection grating, and light emitted from the light source passes through the projection grating and becomes the measuring beam.
In one embodiment, each sensor element of the level sensor group has a measurement dimension for characterizing the size of the measurement spot formed by itself, and the level sensor group includes 10 sensor elements, wherein the measurement dimensions corresponding to the sensor elements are respectively: 0.1, 0.3, 0.5, 1, 2, 3, 5, 10, 20, 30 millimeters.
In one embodiment, the horizontal sensor group comprises at least two sets of sensor assemblies; any set of sensor assembly comprises more than two sensor assemblies with the same size, and the sensor assemblies respectively contained in any two sets of sensor assemblies are different in size; or any set of the sensor assemblies comprise sensor assemblies with different sizes, and the sensor assemblies in any two sets of the sensor assemblies have the same size.
In one embodiment, the device further comprises a displacement mechanism, wherein the displacement mechanism is connected with the object stage and used for driving the object stage to move so as to realize the relative movement of the object stage and the level sensor.
A lithographic apparatus comprising a level measurement device according to any one of the preceding claims.
A method for measuring the surface flatness of a wafer comprises the following steps: acquiring layout information of a wafer to be detected; obtaining the size of an exposure area according to the layout information; selecting at least one sensor assembly from a horizontal sensor group according to the size of the exposure area to form a horizontal sensor; the horizontal sensor group comprises sensor components with different sizes; and measuring the surface flatness of the wafer to be measured through the horizontal sensor.
In one embodiment, the measuring, by the level sensor, the surface flatness of the wafer to be measured includes: the horizontal sensor projects the measuring beam to the surface of the wafer to be measured so as to form a measuring light spot on the surface of the wafer; the horizontal sensor receives the measuring light beam reflected by the surface of the wafer; and the level sensor obtains the leveling condition of the surface of the wafer according to the received measuring beam.
In one embodiment, each sensor assembly of the horizontal sensor set has a measurement dimension that characterizes a measurement spot size formed by itself; the method for selecting at least one sensor component from a horizontal sensor group according to the size of the exposure area to form a horizontal sensor comprises the following steps: and selecting at least one sensor assembly from the horizontal sensor group based on the principle of least quantity, so that the corresponding measured size of the horizontal sensor formed by the at least one sensor assembly is matched with the size of the exposure area.
In one embodiment, the wafer to be tested is carried on a stage; through the level sensor measurement the surfacing condition of the wafer that awaits measuring still includes: and driving the object stage bearing the wafer to be detected through a shifting mechanism so as to realize the relative movement of the object stage and the horizontal sensor.
In one embodiment, the surface of the wafer to be tested comprises a plurality of rows of regions to be exposed; the measuring size is the length of a measuring light spot formed on the horizontal surface of the wafer to be measured by the measuring light beam in a first direction when the measuring light beam is projected to the horizontal surface; the driving the stage by the displacement mechanism includes: step A, driving the objective table through the shifting mechanism, and aligning the measuring light spot to a row of areas to be exposed; b, driving the objective table to move along a second direction through the shifting mechanism so as to complete scanning measurement of a row of areas to be exposed on the wafer to be measured, wherein the second direction is perpendicular to the first direction and is parallel to the bearing surface of the objective table; step C, driving the objective table to move along a first direction through the shifting mechanism, so that the measuring light spots are aligned to another row of areas to be exposed; and repeating the step B and the step C to finish the measurement of the surface flatness of each to-be-exposed area on the wafer to be measured.
According to the level measuring device with higher surface flatness, the photoetching equipment and the method for measuring the surface flatness of the wafer, an operator can select or combine the sensor components from the level sensor group according to the size of the exposure area of the product layout to obtain the level sensor with the measurement size matched with the size of the exposure area, and then the level sensor is used for measuring the flatness of the surface of the wafer. Therefore, the measuring size of the horizontal sensor of the photoetching equipment is adjustable, an operator can measure the wafer by using the horizontal sensor matched with the size of the exposure area, and the measuring accuracy is higher.
Drawings
FIG. 1 is a measurement schematic of a sensor assembly of the level sensor in one embodiment;
FIG. 2 is a schematic view of an exposure area and a spot of a measuring beam on a wafer surface;
FIG. 3 is a flow diagram of a method for measuring the planarity of a wafer surface with a lithographic apparatus in one embodiment;
FIGS. 4a and 4b are each a schematic view of an exemplary arrangement of sensor elements of a level sensor;
FIG. 5 is a schematic view of a projection of a larger measurement spot of the level sensor onto the wafer surface;
fig. 6 is a schematic view of the projection of the small measurement spot of the level sensor onto the wafer surface.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The inventor believes through experiments and researches that when the traditional level sensor is used for measuring wafers with different layouts, the reason that the flatness has precision deviation is as follows: the exposure area size, the longitudinal and transverse arrangement and other factors of different layouts are different, so that the same horizontal sensor can generate larger measurement error when being adapted to the wafer of the layout with the improper size. For example, in the case of an optical level sensor, the size of a measuring beam projected by the optical level sensor is fixed, and thus a large measurement error occurs when a wafer of a layout with an inappropriate size is measured. Referring to fig. 5 and 6, fig. 5 is a schematic projection diagram of a large measurement spot of the level sensor on the surface of the wafer; fig. 6 is a schematic view of the projection of the small measurement spot of the level sensor onto the wafer surface. The measurement spot 22a projected on the wafer surface by the single sensor element with larger size shown in fig. 5 covers and exceeds the edge of the area to be exposed 21 on the wafer, thereby causing the measurement accuracy to be reduced. While the comparative example of fig. 6 employs a single sensor assembly of smaller size, the measurement spot 22b is smaller, which leads to higher cost and edge shift (edge shift) problems, which leads to reduced measurement accuracy. Edge offset refers to the difficulty in maintaining the edge-located sensor elements at the same level as the center-located sensor elements when the level sensor is formed by combining more sensor elements.
The exposure field size in the present description and claims refers to: when a pattern to be subjected to pattern transfer on a mask is exposed to a target, the size of an exposure area formed on the target is obtained. Since the leveling condition of the wafer surface is measured by using the level sensor usually before the exposure, the region of the wafer surface corresponding to the exposure region is referred to as the region to be exposed in the present specification.
In order to solve the above technical problem, the present application provides a level measuring device with an adjustable level sensor design. In some embodiments, the device may be used independently; in other embodiments, the apparatus may also be integrated in a lithographic apparatus (e.g., a lithographic machine). The level measuring device comprises an object stage and a level sensor, wherein the object stage is used for carrying an object (such as a wafer), and the level sensor is used for measuring the flatness of the surface of the object carried on the object stage. The level sensor includes at least one sensor element selected from a level sensor group, the level sensor group including a plurality of sensor elements having different sizes (i.e., the level sensor group includes sensor elements of at least two sizes); in one embodiment, a horizontal sensor group includes sensor elements that vary in size. When an operator uses the level measurement device to measure the leveling condition of the surface of the wafer on the objective table, the corresponding size of an exposure area can be obtained according to layout information of a product, at least one sensor assembly in a level sensor group is selected to be combined to obtain a level sensor with the measurement size matched with the size of the exposure area, the measurement size of the level sensor formed after combination is the size corresponding to a measurement light spot formed by at least one sensor assembly together, and then the level sensor is used for measuring the leveling condition of the surface of the wafer. Therefore, the measuring size of the horizontal sensor of the horizontal measuring device is adjustable, an operator can measure the wafer by using the horizontal sensor matched with the size of the exposure area, and the measuring accuracy is higher.
In one embodiment, each sensor component of the horizontal sensor group is an optical sensor. When the level sensor is formed by mounting more than two sensor components together, the emergent light paths of the sensor components are parallel to each other, so that the measuring range of the whole level sensor is formed by overlapping the measuring ranges of the sensor components.
Fig. 1 is a schematic diagram of a sensor assembly of a level sensor in one embodiment, and it should be noted that, in order to avoid the situation where the components are too crowded to affect the discrimination, the components (modules) of the sensor assembly are drawn more discretely in fig. 1, and the components are arranged more compactly in the actual sensor assembly, and there is usually no such large incident angle. As shown in fig. 1, each sensor assembly includes a projection module 110, a detection module 120, and a processing module 130. The projection module 110 is used for projecting a measuring beam onto the surface of an object carried on the stage to form a measuring spot on the surface of the object, and the measuring beam is projected onto the upper surface 200 of the wafer in the embodiment shown in fig. 1. The detection module 120 is used for receiving the measuring beam reflected by the object. The processing module 130 obtains the flatness of the object surface according to the measuring beam received by the detecting module 120. The detection module 120 is electrically or communicatively connected to the processing module 130 to transmit the resulting optical signal to the processing module 130. In one embodiment, the processing module 130 derives the flatness of the surface of the object and derives a Height Map (Height Map) of the substrate.
In the embodiment shown in fig. 1, the projection module 110 projects the measuring beam onto the upper surface 200 of the wafer at an incident angle, and the measuring beam forms a light spot with a length L on the upper surface 200, and the coverage of the light spot on the upper surface 200 is the measuring range of the sensor assembly. The left-right direction of fig. 1 is defined as the Y-axis direction, the up-down direction is defined as the Z-axis direction, and the length L of the spot means the length in the Y-axis direction. It will be appreciated that the spot also has a width W in the X-axis direction (not shown in fig. 1). In the embodiment shown in fig. 1, the detection module 120 includes a detection grating 121, a first optical receiver 122, and a second optical receiver 124. After the measuring beam reflected by the upper surface 200 propagates to the detection grating 121, the detection grating 121 is split into a first beam and a second beam, the first light receiver 122 is used for receiving the first beam, and the second light receiver 124 is used for receiving the second beam. The level of the upper surface 200 at the light spot can be obtained by using triangulation techniques (triangulation techniques) based on the difference in intensity of the light beams detected by the first and second light receivers 122 and 124, respectively, which is generated in relation to the light interference. In the embodiment shown in fig. 1, the first optical receiver 122 and the second optical receiver 124 are disposed perpendicular to each other, but not limited thereto, and the first optical receiver 122 and the second optical receiver 124 may also be disposed at an angle.
In the embodiment shown in fig. 1, the projection module includes a light source 112 and a projection grating 111, and light emitted from the light source 112 passes through the projection grating 111 to become a measuring beam. In one embodiment, projection grating 111 is a transmission grating; in other embodiments, a reflection grating or a diffraction grating may also be used to generate the same or similar measuring beam.
It will be appreciated that in other embodiments, multiple sensor assemblies of the level sensor may share a single light source, and/or share a single processing module 130. Accordingly, however, the structure of the level sensor needs to be redesigned to enable the projection grating 111 of the sensor assembly to be adapted to the light source, and an electrical connection structure for facilitating the disassembly and assembly of the detection module 120 and the processing module 130 can be designed.
In one embodiment, the level measuring device further comprises a displacement mechanism for effecting relative movement of the stage and the level sensor. In one embodiment, the displacement mechanism is a drive stage that moves to effect relative movement of the stage and the level sensor.
FIG. 2 is a schematic view of the exposure area and the spot of the measuring beam on the wafer surface. The photolithography apparatus exposes a plurality of exposure regions 210 on the wafer surface to complete the fabrication of the integrated circuit. As mentioned above, the leveling device may be disposed in the lithographic apparatus, and the corresponding positions of the exposure regions 210 are referred to as to-be-exposed regions before exposure, and the leveling device may perform leveling on the to-be-exposed regions before exposure, or may perform leveling on the exposure regions after exposure. In the embodiment shown in fig. 2, the measuring beam of the level sensor is projected on the surface of the wafer to form a light spot 220, and the light spot 220 has a width W in the X-axis direction and a length L in the Y-axis direction in fig. 2. As described above, in order to obtain higher measurement accuracy, before the level sensor is used to measure the surface flatness of the wafer, an operator may obtain the size of the exposure area (e.g., obtain the width of the exposure area) according to the layout information, and then select or combine sensor modules from the level sensor group to obtain a level sensor with a measurement range matching the size of the exposure area. Therefore, the measurement spot formed by the level sensor has a measurement size matched to the size of the exposure area of the wafer surface to be exposed. In the embodiment shown in fig. 2, the width W of the light spot 220 is equal to the width of one exposure region 210. The light spot 220 is aligned with one exposure area 210 left and right, and then the stage is moved in the Y-axis direction by the displacement mechanism, so that the measurement of the flatness of the wafer surface area corresponding to one row of exposure areas 210 can be completed. And then, the objective table is moved in the X-axis direction through the shifting mechanism, the light spots 220 are aligned with the exposure areas 210 in the other row from left to right, and the objective table is moved in the Y-axis direction, so that the flatness measurement of the wafer surface area corresponding to the exposure areas 210 in the other row can be completed. And repeating the steps to finish the measurement of the flatness of the whole surface of the wafer. The arrow direction of fig. 2 shows the relative displacement trajectory of the level sensor on the half of the wafer when the level sensor is used to measure the surface flatness of the wafer (the other half not shown can be referred to the trajectory as well).
In one embodiment, the horizontal sensor group comprises at least two sets of sensor assemblies, wherein each set of sensor assembly comprises more than two sensor assemblies with the same size, and the sensor assemblies of any two sets of sensor assemblies are different in size. Specifically, in one embodiment, the level sensor group comprises two sets of sensor assemblies, one set comprises 10 sensor assemblies with the diameter of 1mm, the other set comprises 10 sensor assemblies with the diameter of 10mm, and the level sensor can be selected from the two sets of sensor assemblies and combined into the level sensor when the surface flatness of the wafer is measured.
In one embodiment, the horizontal sensor cluster includes at least two sets of sensor assemblies, and any one set of sensor assemblies includes sensor assemblies of different sizes, and any two sets of sensor assemblies may include sensor assemblies of the same size. For example, the horizontal sensor group includes two sets of sensor assemblies, one set includes 5 sensor assemblies and has a size of 1, 2, 3, 4, 5mm, and the other set may include 5 sensor assemblies and has a size of 1, 2, 3, 4, 5mm, or the other set may include 6 sensor assemblies and has a size of 5, 10, 15, 20, 25, 30 mm. The operator can select sensor assemblies with different sizes to be combined, and can also select sensor assemblies with the same or different sizes to be combined.
Each sensor assembly of the horizontal sensor group has a measuring size for representing the size of a measuring light spot formed by the sensor assembly, and an operator selects and matches a horizontal sensor matched with the size of an exposure area of a wafer to be measured according to the measuring size. In one embodiment, a lithographic apparatus is correspondingly equipped with two identical sets of level sensors. This redundant configuration ensures that a sensor assembly can be replaced in a timely manner if it becomes abnormal. In addition, because the two horizontal sensor groups can be independently used, when the photoetching equipment uses one horizontal sensor group to form the horizontal sensor and measures, the other horizontal sensor group is used for carrying out horizontal sensor combination in advance according to the production arrangement of the next product, so that the phenomenon that when a machine product is converted, extra conversion (overlap) time is generated when different sensor combinations are installed, and the production efficiency is reduced is avoided. When a plurality of sensor assemblies form a horizontal sensor, the fixing mode can be clamping, and can also be fixing through a fastener such as a screw.
In one embodiment, as shown in the following table, a level sensor group includes 10 sensor elements, each measured in size: 0.1, 0.3, 0.5, 1, 2, 3, 5, 10, 20, 30 millimeters. It will be appreciated that in other embodiments, the sensor units of the horizontal sensor group may have other dimensions, and may be set empirically by the skilled person, or may refer to other technical fields, such as the weight of a balance. In this embodiment, the measurement dimension is the width of the spot formed by the projection of the measuring beam on the wafer surface.
| Numbering | A1 | B1 | C1 | D1 | E1 | F1 | G1 | H1 | I1 | J1 |
| Size mm | 30 | 20 | 10 | 5 | 3 | 2 | 1 | 0.5 | 0.3 | 0.1 |
TABLE 1
Two such level sensor groups may be provided for one level gauging device, i.e. the level gauging device further comprises one level sensor group as follows.
| Numbering | A2 | B2 | C2 | D2 | E2 | F2 | G2 | H2 | I2 | J2 |
| Size mm | 30 | 20 | 10 | 5 | 3 | 2 | 1 | 0.5 | 0.3 | 0.1 |
TABLE 2
The two horizontal sensor groups can be used independently or in a backup (backup) mode. For example, for a layout with an exposure area width of 60mm, a horizontal sensor with a measurement size of 60mm can be formed by A1+ B1+ C1, so that only one horizontal sensor group is needed; two horizontal sensor groups can also be used in combination, such as A1+ A2, or A1+ B2+ C2, or A2+ B1+ C1. In one embodiment, the horizontal sensor is formed using as few sensor elements as possible for a given exposure area size, i.e., the selection of sensor elements is based on a minimum number principle, which helps to solve the edge shift (edge shift) problem caused by excessive sensor elements. For example, for a measurement size of 61mm, the 30+30+1 combination may be preferred over the 30+20+10+1 combination, which requires more sensor components.
To reduce the effects of edge offset, where a level sensor includes multiple sensor elements of measured dimensions, the larger sensor elements are placed more centrally and the smaller sensor elements are placed more marginally. Based on this principle, fig. 4a and 4b are each a schematic diagram of an arrangement of sensor elements of the level sensor in one embodiment. Where the dimensions of fig. 4a are measured as 5+10+ 3-18 mm and the dimensions of fig. 4b are measured as 5+10+3+ 0.5-18.5 mm.
The present application further provides a method for measuring the surface flatness of a wafer, which uses the level measurement device of any of the above embodiments to measure the surface flatness of the wafer. FIG. 3 is a flow chart of a method for measuring the planarity of a wafer surface using a level measurement device in accordance with one embodiment, comprising the steps of:
s310, obtaining layout information of the wafer to be tested.
Before configuring the level sensor, obtaining the layout information of the wafer to be measured.
And S320, obtaining the size of the exposure area according to the layout information.
In one embodiment, the size of the exposure area can be determined manually by an operator according to layout information; in another embodiment, a specific parameter item is extracted from the layout information by software to serve as the size of an exposure area.
S330, selecting at least one sensor assembly from the horizontal sensor group according to the size of the exposure area to form a horizontal sensor.
Selecting at least one sensor component from the horizontal sensor group according to the size of the exposure area to form a horizontal sensor of the horizontal measuring device, so that the measuring size of the horizontal sensor is matched with the size of the exposure area; the horizontal sensor group includes sensor elements that are not the same size.
And S340, measuring the surface flatness of the wafer to be measured through the horizontal sensor.
In one embodiment, step S340 includes:
the horizontal sensor projects the measuring beam to the surface of the wafer to be measured so as to form a measuring light spot on the surface of the wafer;
the horizontal sensor receives the measuring beam reflected by the surface of the wafer;
and the level sensor obtains the flatness of the surface of the wafer according to the received measuring beam.
In one embodiment, each sensor element of the horizontal sensor set has a measurement dimension characterizing a size of a measurement spot formed by itself, and step S330 includes:
and selecting at least one sensor assembly from the horizontal sensor group based on the least quantity principle, so that the corresponding measured size of the horizontal sensor formed by the at least one sensor assembly is matched with the size of the exposure area.
Referring to fig. 2, in an embodiment, the step S340 specifically includes: and step A, driving the objective table through a shifting mechanism, and aligning the measuring light spots to a row of areas to be exposed.
And step B, driving the objective table to move along the Y-axis direction through the shifting mechanism so as to complete scanning measurement of a row of exposure areas on the wafer. The Y-axis direction is parallel to the bearing surface of the objective table.
And step C, driving the object stage to move relative to the horizontal sensor through the shifting mechanism, so that the horizontal sensor comes to another row of exposure area positions (namely, the object stage moves to a position where the row of exposure areas are below the horizontal sensor).
And repeating the steps B and C to finish the measurement of the surface flatness of each exposure area on the wafer.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (15)
1. A leveling device, comprising: the device comprises an object stage and a level sensor, wherein the level sensor is used for measuring the flatness of the surface of an object carried on the object stage, the level sensor comprises at least one sensor component selected from a level sensor group, and the level sensor group comprises sensor components with different sizes.
2. The level measuring device of claim 1, wherein each sensor element of the level sensor group is an optical sensor, and the exit light paths of different sensor elements of the level sensor are parallel to each other.
3. The level measuring device of claim 2, wherein the level sensor is configured to measure the flatness of the surface of a wafer carried on the stage, each sensor assembly of the level sensor comprising:
the projection module is used for projecting the measuring beam to the surface of an object carried on the object stage so as to form a measuring light spot on the surface of the object;
the detection module is used for receiving the measuring light beam reflected by the surface of the object;
and the processing module is used for obtaining the flatness of the surface of the object according to the measuring beam received by the detection module.
4. The level measuring device according to claim 3, wherein the measuring spot formed by the level sensor has a measuring size matched to an exposure area size of an area to be exposed on the wafer surface.
5. The level measuring device of claim 3, wherein the detection module comprises a detection grating for splitting the measuring beam reflected by the object into a first beam and a second beam, the detection module further comprising a first light receiver for receiving the first beam and a second light receiver for receiving the second beam.
6. The leveling device of claim 3, wherein the projection module comprises a light source and a projection grating, and light emitted by the light source passes through the projection grating to become the measuring beam.
7. The level-measuring device of claim 3, wherein each sensor element of the level sensor group has a measurement dimension characterizing the size of the measurement spot formed by itself, the level sensor group comprising 10 sensor elements, wherein the measurement dimensions of the sensor elements are: 0.1, 0.3, 0.5, 1, 2, 3, 5, 10, 20, 30 millimeters.
8. The level measuring device of claim 1, wherein said level sensor group comprises at least two sets of sensor assemblies;
any set of sensor assembly comprises more than two sensor assemblies with the same size, and the sensor assemblies respectively contained in any two sets of sensor assemblies are different in size; or
Any set of the sensor assemblies comprises sensor assemblies of different dimensions, and any two sets of the sensor assemblies comprise sensor assemblies of the same dimensions.
9. The level measuring device of any one of claims 1-8, further comprising a displacement mechanism coupled to the stage for driving movement of the stage to effect relative movement of the stage and the level sensor.
10. A lithographic apparatus comprising a level measurement device according to any one of claims 1 to 9.
11. A method for measuring the surface flatness of a wafer comprises the following steps:
acquiring layout information of a wafer to be detected;
obtaining the size of an exposure area according to the layout information;
selecting at least one sensor assembly from a horizontal sensor group according to the size of the exposure area to form a horizontal sensor; the horizontal sensor group comprises sensor components with different sizes;
and measuring the surface flatness of the wafer to be measured through the horizontal sensor.
12. The method of claim 11, wherein the measuring the surface flatness of the wafer to be tested by the level sensor comprises:
the horizontal sensor projects the measuring beam to the surface of the wafer to be measured so as to form a measuring light spot on the surface of the wafer;
the horizontal sensor receives the measuring light beam reflected by the surface of the wafer;
and the level sensor obtains the leveling condition of the surface of the wafer according to the received measuring beam.
13. The method of claim 11, wherein each sensor assembly of the set of level sensors has a measurement dimension characterizing a measurement spot size formed by itself;
the method for selecting at least one sensor component from a horizontal sensor group according to the size of the exposure area to form a horizontal sensor comprises the following steps:
and selecting at least one sensor assembly from the horizontal sensor group based on the principle of least quantity, so that the corresponding measured size of the horizontal sensor formed by the at least one sensor assembly is matched with the size of the exposure area.
14. The method of claim 12, wherein the wafer to be tested is carried on a stage; through the level sensor measurement the surfacing condition of the wafer that awaits measuring still includes:
and driving the object stage bearing the wafer to be detected through a shifting mechanism so as to realize the relative movement of the object stage and the horizontal sensor.
15. The method of claim 14, wherein the surface of the wafer comprises a plurality of rows of regions to be exposed; the measuring size is the length of a measuring light spot formed on the horizontal surface of the wafer to be measured by the measuring light beam in a first direction when the measuring light beam is projected to the horizontal surface; the driving the stage by the displacement mechanism includes:
step A, driving the objective table through the shifting mechanism, and aligning the measuring light spot to a row of areas to be exposed;
b, driving the objective table to move along a second direction through the shifting mechanism so as to complete scanning measurement of a row of areas to be exposed on the wafer to be measured, wherein the second direction is perpendicular to the first direction and is parallel to the bearing surface of the objective table;
step C, driving the objective table to move along a first direction through the shifting mechanism, so that the measuring light spots are aligned to another row of areas to be exposed;
and repeating the step B and the step C to finish the measurement of the surface flatness of each to-be-exposed area on the wafer to be measured.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113053771A (en) * | 2021-03-17 | 2021-06-29 | 长鑫存储技术有限公司 | Method for judging contour of semiconductor structure |
| CN113948414A (en) * | 2021-10-19 | 2022-01-18 | 无锡卓海科技股份有限公司 | Automatic leveling device for film stress gauge |
| WO2022222326A1 (en) * | 2021-04-23 | 2022-10-27 | 长鑫存储技术有限公司 | Wafer table flatness monitoring method, apparatus and system, and storage medium |
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2019
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113053771A (en) * | 2021-03-17 | 2021-06-29 | 长鑫存储技术有限公司 | Method for judging contour of semiconductor structure |
| CN113053771B (en) * | 2021-03-17 | 2022-05-24 | 长鑫存储技术有限公司 | Method for judging contour of semiconductor structure |
| WO2022222326A1 (en) * | 2021-04-23 | 2022-10-27 | 长鑫存储技术有限公司 | Wafer table flatness monitoring method, apparatus and system, and storage medium |
| CN113948414A (en) * | 2021-10-19 | 2022-01-18 | 无锡卓海科技股份有限公司 | Automatic leveling device for film stress gauge |
| CN113948414B (en) * | 2021-10-19 | 2024-02-09 | 无锡卓海科技股份有限公司 | Automatic leveling device for film stress instrument |
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