CN112340737B

CN112340737B - Solar-grade polycrystalline silicon production device

Info

Publication number: CN112340737B
Application number: CN202011234230.6A
Authority: CN
Inventors: 张建敏
Original assignee: Inner Mongolia Dongli Photovoltaic Electronic Co ltd
Current assignee: Inner Mongolia Dongli photovoltaic Electronic Co.,Ltd.
Priority date: 2020-11-07
Filing date: 2020-11-07
Publication date: 2022-04-05
Anticipated expiration: 2040-11-07
Also published as: CN112340737A

Abstract

The invention discloses a solar grade polysilicon production device, relating to the technical field of solar energy production equipment, comprising a reduction furnace, wherein the top and the bottom of the reduction furnace are respectively provided with a furnace cover and a base, the top of the furnace cover is provided with a sight glass and an outlet,the top of the base is provided with a plurality of groups of silicon rods, the bottom of each silicon rod is provided with an electric heater, the inner wall of the reduction furnace is provided with a containing cavity, one side of the containing cavity is connected with an air inlet ring pipe, and the bottom of the air inlet ring pipe is connected with a plurality of groups of coil pipes. The invention is realized by SiHCl discharged from a feed inlet₃，SiHCl₃The air flow in each air inlet pipe is injected more uniformly to preheat the air inlet pipe and H₂Enters the coil pipe from the air inlet ring pipe to fill H in the reducing furnaces with different heights₂Reacting SiHCl₃When ejected into the reduction furnace, with the ejected H₂Mixing to make SiHCl₃And H₂Can fully react and better cooperate with SiHCl₃And (4) carrying out reduction.

Description

Solar-grade polycrystalline silicon production device

Technical Field

The invention relates to the technical field of solar energy production equipment, in particular to a solar grade polycrystalline silicon production device.

Background

Polycrystalline silicon is a form of elemental silicon, and when molten elemental silicon is solidified under a super-cooling condition, silicon atoms are arranged in a diamond lattice form to form a plurality of crystal nuclei, and if the crystal nuclei grow to form crystal grains with different crystal plane orientations, the crystal grains are combined to crystallize into polycrystalline silicon. The development trend of the international solar cell is seen in monocrystalline silicon, polycrystalline silicon, ribbon silicon and thin film materials (including microcrystalline silicon-based thin films, compound-based thin films and dye thin films). The production technology of polysilicon is mainly improved Siemens process and silane process, and the improved Siemens process makes industrial silicon powder react with HCl to produce SiHCl₃Then let SiHCl₃At H₂The method has the advantages of obvious energy saving and consumption reduction, low cost, good quality, no pollution to the environment by adopting a comprehensive utilization technology and obvious competitive advantage.

In the production process of polycrystalline silicon, SiHCl subjected to multi-stage rectification₃High-purity SiHCl is prepared by adopting a high-temperature reduction process₃At H₂Reduced but in SiHCl₃When a reaction occurs, H is reacted₂Not well compatible with SiHCl₃Carrying out fusion to make SiHCl₃Low utilization of (A), less capacity of producing polycrystalline silicon, H₂Has less outlet openings, makes the atmosphere nonuniform, and other gaseous mixtures generated in the reaction are easy to react with H₂Is mixed at the outletMixing and then feeding into a reduction furnace, H₂The atmosphere is not enough and the SiHCl can not be well regulated to enter the reduction furnace₃The reaction effect is not good.

Disclosure of Invention

The invention aims to: to solve the problem of SiHCl₃When a reaction occurs, H is reacted₂Not well compatible with SiHCl₃Carrying out fusion to make SiHCl₃Low utilization of (A), less capacity of producing polycrystalline silicon, H₂The outlet of the solar-grade polycrystalline silicon production device is less, so that the atmosphere is not uniform.

In order to achieve the purpose, the invention provides the following technical scheme: a solar-grade polycrystalline silicon production device comprises a reduction furnace, wherein the top and the bottom of the reduction furnace are respectively provided with a furnace cover and a base, the top of the furnace cover is provided with a sight glass and an outlet, the top of the base is provided with a plurality of silicon rods, the bottom of each silicon rod is provided with an electric heater, the inner wall of the reduction furnace is provided with a containing cavity, one side of the containing cavity is connected with an air inlet ring pipe, the bottom of the air inlet ring pipe is connected with a plurality of coil pipes, one end of each coil pipe is connected with a first air outlet pipe, an air outlet through groove is formed inside the first air outlet pipe, one side of the air outlet through groove is connected with a channel, the top and the bottom of the air outlet through groove are both provided with grooves, springs are fixed on the inner walls of the grooves, one-way plugs are arranged inside the channels and fixedly connected with the head ends of the springs, the top of the furnace cover is connected with a feed pipe, and a storage bin and a cavity are arranged inside the feed pipe, the inside in storage storehouse all rotates and is connected with the regulating spindle that extends to the cavity inside, and the outside of regulating spindle is fixed with the multiunit baffle, the inside of cavity rotates and is connected with the connecting axle, and the outside of connecting axle is fixed with the cooperation gear, the outside of regulating spindle is fixed with the gear wheel, the below in storage storehouse is connected with the multiunit intake pipe, and the outside of intake pipe is provided with multiunit second outlet duct.

Preferably, the outer side of the bull gear is provided with a chain, a plurality of groups of the bull gears are rotationally connected through the chain, and a pinion meshed with the matching gear is fixed at the tail end of one group of the adjusting shaft.

Preferably, the number of the partition plates is six, and the distance between the six groups of the partition plates is larger than the diameter of the top inlet and the bottom outlet of the storage bin.

Preferably, the positions of the multiple groups of air inlet pipes and the multiple groups of silicon rods are staggered with each other.

Preferably, the diameter of the channel is larger than that of the air outlet through groove, the diameter of the one-way plug is larger than that of the air outlet through groove, and a gap is formed between the channel and the one-way plug.

Preferably, the reduction furnace, the furnace cover and the base are detachably connected through flange plates.

Preferably, the number of the coil pipes is multiple groups, and the multiple groups of the coil pipes are of a serpentine structure from top to bottom.

Compared with the prior art, the invention has the beneficial effects that:

1. the invention is realized by SiHCl discharged from a feed inlet₃Reacting SiHCl₃In a second outlet duct moving downwardly from the inlet duct to a different position, and, at the same time, H₂From the inlet loop into the coil₂Moving down in coils at different positions to make H₂Reach the first air outlet pipes at different positions to fill the reducing furnaces at different heights with H₂Reacting SiHCl₃When ejected into the reduction furnace, with the ejected H₂Mixing to make SiHCl₃And H₂Can fully react and better cooperate with SiHCl₃Carrying out reduction;

2. in the invention, the air outlet through groove is blocked by the one-way plug in the position of the first air outlet pipe, so that SiHCl is enabled to be₃And H₂The formed mixed gas flow is blocked by a one-way plug, so that the mixed gas in the reduction furnace is subjected to SiHCl₃Reduction reaction, H with gas inlet loop₂Is injected with H supplied₂The purity is kept, the first air outlet pipe is kept in a one-way closed state in the period of non-supply, the mixed air flow in the reduction furnace is prevented from flowing reversely, and meanwhile, the one-way flowing structure can play a role in sealing;

3. hair brushThe connecting shaft drives the matching gear to rotate through the arranged adjusting groove, the small gear drives the large gear to rotate by utilizing the mutual meshing of the matching gear and the small gear, the plurality of adjusting shafts drive the partition plates to rotate by utilizing the mutual matching of the large gear and the chain, and simultaneously, the SiHCl₃Injecting from the feed pipe to make SiHCl between the separators₃Until the internal SiHCl of the adjacent partition board₃Filling up to SiHCl₃The gas flow is distributed into different storage bins from the feeding pipe, so that the gas flow in each air inlet pipe is more uniformly injected, and then the gas flow can be better preheated in the H direction₂And (4) carrying out reduction in an atmosphere.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic view of the structure of a feed chute according to the present invention;

FIG. 3 is a schematic view of the structure of the cavity of the present invention;

FIG. 4 is a schematic structural view of the coil of the present invention;

fig. 5 is an enlarged view of the invention at a in fig. 1.

In the figure: 1. a reduction furnace; 2. a cavity; 3. a sight glass; 4. an outlet; 5. a flange plate; 6. a base; 7. a silicon rod; 8. an air inlet ring pipe; 9. a coil pipe; 10. a first air outlet pipe; 11. a channel; 12. an air outlet through groove; 13. a groove; 14. a spring; 15. a one-way plug; 16. a gap; 17. a feed pipe; 18. a partition plate; 19. an adjustment shaft; 20. storing in a warehouse; 21. a cavity; 22. a bull gear; 23. a chain; 24. a pinion gear; 25. a connecting shaft; 26. a mating gear; 27. an air inlet pipe; 28. a second air outlet pipe; 29. an electric heater; 30. a furnace cover.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "disposed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art. The following describes an embodiment of the present invention based on its overall structure.

Referring to fig. 1-5, a solar grade polysilicon production device comprises a reduction furnace 1, a furnace cover 30 and a base 6 are respectively arranged at the top and bottom of the reduction furnace 1, a viewing mirror 3 and an outlet 4 are arranged at the top of the furnace cover 30, a plurality of groups of silicon rods 7 are arranged at the top of the base 6, an electric heater 29 is arranged at the bottom of the silicon rods 7, a chamber 2 is arranged on the inner wall of the reduction furnace 1, an air inlet ring pipe 8 is connected to one side of the chamber 2, a plurality of groups of coil pipes 9 are connected to the bottom of the air inlet ring pipe 8, a first air outlet pipe 10 is connected to one end of each coil pipe 9, an air outlet groove 12 is arranged inside each first air outlet pipe 10, a channel 11 is connected to one side of each air outlet groove 12, grooves 13 are respectively arranged at the top and the bottom of each air outlet groove 12, a spring 14 is fixed to the inner wall of each groove 13, a one-way plug 15 is arranged inside each channel 11, and the one-way plug 15 is fixedly connected to the head end of the spring 14, the top of bell 30 is connected with inlet pipe 17, the inside of inlet pipe 17 is provided with storage bin 20 and cavity 21, the inside of storage bin 20 all rotates and is connected with the regulating spindle 19 that extends to the inside of cavity 21, and the outside of regulating spindle 19 is fixed with multiunit baffle 18, the inside of cavity 21 rotates and is connected with connecting axle 25, and the outside of connecting axle 25 is fixed with cooperation gear 26, the outside of regulating spindle 19 is fixed with gear wheel 22, the below of storage bin 20 is connected with multiunit intake pipe 27, and the outside of intake pipe 27 is provided with multiunit second outlet duct 28.

In the present example, by SiHCl discharged from the feed line 17₃，SiHCl₃From the feed pipe 17 to the various silos 20, so as to obtain a more uniform injection of the air flow inside each intake pipe 27, with preheating of the intake pipes, H₂Enters the coil pipe 9 from the gas inlet ring pipe 8 to fill the reducing furnace 1 with H at different heights₂Reacting SiHCl₃When discharged into the reduction furnace 1, the molten steel is mixed with the discharged H₂Mixing to make SiHCl₃And H₂Can fully react and better cooperate with SiHCl₃And (4) carrying out reduction.

Please refer to fig. 1 and 3, a chain 23 is disposed outside the large gears 22, the large gears 22 are rotatably connected by the chain 23, and a small gear 24 engaged with a mating gear 26 is fixed at the end of the adjusting shaft 19 for uniform air intake operation of the air intake pipes 27 at different positions.

Please refer to fig. 1 and 2, the number of the partition boards 18 is six, and the distance between the six partition boards 18 is larger than the diameter of the top inlet and the bottom outlet of the storage bin 20, the connecting shaft 25 drives the matching gear 26 to rotate, the matching gear 26 and the pinion 24 are engaged with each other, the pinion 24 drives the bull gear 22 to rotate, the bull gear 22 and the chain 23 are engaged with each other, the plurality of adjusting shafts 19 drive the partition boards 18 to rotate, and simultaneously, SiHCl₃Is injected from the feed pipe 17 to subject the separator 18 to SiHCl₃Until the internal SiHCl of the adjacent partition board₃The filling is carried out to make the injection more uniform.

Please refer to fig. 1, the positions of the plurality of air inlet pipes 27 and the plurality of silicon rods 7 are staggered, SiHCl₃From the feed pipe 17 to the different silosIn 20, the gas flow in each inlet pipe 27 is more uniformly injected and then preheated in the high temperature in the reduction furnace 1 through the inlet pipe 27 having a certain length, so that it is better to perform the preheating in H₂And (4) carrying out reduction in an atmosphere.

Please refer to fig. 1 and 5, the diameter of the channel 11 is larger than the diameter of the venting through groove 12, the diameter of the one-way plug 15 is larger than the diameter of the venting through groove 12, a gap 16 is formed between the channel 11 and the one-way plug 15, the one-way plug 15 plugs the venting through groove 12, so that SiHCl is generated₃And H₂The formed mixed gas flow is blocked by a one-way choke plug 15, so that the mixed gas in the reducing furnace 1 is subjected to SiHCl₃Reduction reaction, H, Using the gas intake Loop 8₂Is injected with H supplied₂The purity is kept, the first air outlet pipe 10 is kept in a one-way closing state in the period of non-supply, the mixed air flow in the reduction furnace 1 is prevented from flowing reversely, and meanwhile, the one-way flowing structure can play a role in sealing.

Referring to fig. 1, the reduction furnace 1, the furnace cover 30 and the base 6 are detachably connected by a flange 5, which facilitates the installation and removal and the recovery of polysilicon.

Please refer to fig. 1 and 4, the number of the coil pipes 9 is plural, and the plural coil pipes 9 are in a serpentine structure from top to bottom, H₂From the inlet loop 8 into the coil 9, H₂Moving down in the coil 9 at different positions, so that H₂Reach the first gas outlet pipes 10 at different positions to fill the reducing furnaces 1 with H at different heights₂Reacting SiHCl₃When discharged into the reduction furnace 1, the molten steel is mixed with the discharged H₂Mixing to make SiHCl₃And H₂Can fully react and better cooperate with SiHCl₃And (4) carrying out reduction.

The working principle is as follows: the connecting shaft 25 is driven by the output end of the external motor to drive the matching gear 26 to rotate, the matching gear 26 is meshed with the pinion 24 to enable the pinion 24 to drive the large gear 22 to rotate, the large gear 22 is matched with the chain 23 to enable the adjusting shafts 19 to drive the partition plates 18 to rotate, and simultaneously SiHCl₃From the feed pipe 17 up to the interior of the adjacent partition 18SiHCl₃Filling up to SiHCl₃The gas is distributed into different storage bins 20 from the feeding pipe, so that the gas flow in each gas inlet pipe 27 is injected more uniformly, and then the gas inlet pipes 27 are preheated by the high temperature of the reduction furnace 1, so that the gas can be better preheated in the H process₂Reduction is carried out in an atmosphere while H₂From the inlet loop 8 into the coil 9, H₂Moving down in the coil 9 at different positions, so that H₂Reach the first gas outlet pipes 10 at different positions to fill the reducing furnaces 1 with H at different heights₂Reacting SiHCl₃When discharged into the reduction furnace 1, the molten steel is mixed with the discharged H₂Mixing was carried out, H being well performed compared to the structure mentioned in patent No. CN201010525861.3₂Continuous supply of atmosphere to SiHCl₃And H₂Can fully react, and in the position of the first air outlet pipe 10, the one-way plug 15 plugs the air outlet through groove 12 to ensure that SiHCl₃And H₂The formed mixed gas flow is blocked by a one-way plug, so that the mixed gas in the reducing furnace 1 is subjected to SiHCl₃Reduction reaction, H, Using the gas intake Loop 8₂Is injected with H supplied₂The purity is kept, the first air outlet pipe 10 is kept in a one-way closing state in the period of non-supply, the mixed air flow in the reduction furnace 1 is prevented from flowing reversely, and meanwhile, the one-way flowing structure can play a role in sealing.

It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims

1. A solar grade polycrystalline silicon production device comprises a reduction furnace, and is characterized in that: the top and the bottom of the reduction furnace are respectively provided with a furnace cover and a base, the top of the furnace cover is provided with a viewing mirror and an outlet, the top of the base is provided with a plurality of groups of silicon rods, the bottom of each silicon rod is provided with an electric heater, the inner wall of the reduction furnace is provided with a containing cavity, one side of the containing cavity is connected with an air inlet ring pipe, the bottom of the air inlet ring pipe is connected with a plurality of groups of coil pipes, one end of each coil pipe is connected with a first air outlet pipe, the inside of each first air outlet pipe is provided with an air outlet through groove, one side of the air outlet through groove is connected with a channel, the top and the bottom of the air outlet through groove are both provided with grooves, springs are fixed on the inner walls of the grooves, one-way plugs are arranged inside the channels and are fixedly connected with the head ends of the springs, the top of the furnace cover is connected with a feed pipe, the inside of the feed pipe is provided with a storage bin and a cavity, and the inside of the storage bin is rotatably connected with an adjusting shaft extending to the inside of the cavity, and the outside of regulating spindle is fixed with the multiunit baffle, the inside of cavity rotates and is connected with the connecting axle, and the outside of connecting axle is fixed with the cooperation gear, the outside of regulating spindle is fixed with the gear wheel, the below in storage storehouse is connected with the multiunit intake pipe, and the outside of intake pipe is provided with the multiunit second outlet duct.

2. The solar grade polysilicon production apparatus according to claim 1, wherein: the outer sides of the large gears are provided with chains, a plurality of groups of the large gears are rotationally connected through the chains, and the tail ends of one group of the adjusting shafts are fixed with small gears which are meshed with the matched gears.

3. The solar grade polysilicon production apparatus according to claim 1, wherein: the number of the partition plates is six, and the distance between the six groups of the partition plates is larger than the diameter of the top inlet and the bottom outlet of the storage bin.

4. The solar grade polysilicon production apparatus according to claim 1, wherein: the positions of the multiple groups of air inlet pipes and the positions of the multiple groups of silicon rods are staggered.

5. The solar grade polysilicon production apparatus according to claim 1, wherein: the diameter of the channel is larger than that of the air outlet through groove, the diameter of the one-way plug is larger than that of the air outlet through groove, and a gap is formed between the channel and the one-way plug.

6. The solar grade polysilicon production apparatus according to claim 1, wherein: the reduction furnace, the furnace cover and the base are detachably connected through flange plates.

7. The solar grade polysilicon production apparatus according to claim 1, wherein: the figure of coil pipe is the multiunit, and multiunit coil pipe is from last to being snakelike structure down.