CN112331769A - Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization - Google Patents
Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization Download PDFInfo
- Publication number
- CN112331769A CN112331769A CN202011156234.7A CN202011156234A CN112331769A CN 112331769 A CN112331769 A CN 112331769A CN 202011156234 A CN202011156234 A CN 202011156234A CN 112331769 A CN112331769 A CN 112331769A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- negative resistance
- effect
- impact ionization
- magnetoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 230000005684 electric field Effects 0.000 claims abstract description 20
- 230000009471 action Effects 0.000 claims abstract description 14
- 230000001965 increasing effect Effects 0.000 claims abstract description 12
- 230000008859 change Effects 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 239000000969 carrier Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 17
- 229920006395 saturated elastomer Polymers 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 238000011161 development Methods 0.000 abstract description 4
- 238000000691 measurement method Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000687983 Cerobasis alpha Species 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a device with coexisting negative resistance and unsaturated magnetoresistance effects based on local impact ionization, which belongs to the technical field of semiconductor devices and comprises a semiconductor substrate and two metal electrodes; the two metal electrodes are arranged on the same surface of the semiconductor substrate, and at least one metal electrode is positioned on the edge of the surface of the semiconductor substrate; continuously increased current is applied to the metal electrode, the electric field intensity of a local non-uniform electric field formed in the semiconductor substrate is enhanced, local impact ionization occurs, an equivalent carrier injection effect is generated, and a negative resistance effect is formed on the device; the device is placed in a magnetic field, and the current carriers in the semiconductor substrate are subjected to non-uniform change due to the action of Lorentz force, so that the unsaturated magnetoresistance effect is presented, and the negative resistance effect and the unsaturated magnetoresistance effect are coexisted in the device. The invention has simple structure and mature performance measurement method, and can be applied to the development of novel multifunctional devices, such as a pulse generator with high magnetic sensitivity and a novel multifunctional magnetic storage device.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a device with coexisting negative resistance and unsaturated magnetoresistance effects based on local impact ionization.
Background
The negative differential resistance (negative resistance) effect refers to a nonlinear electrical transport effect in which the measurement voltage decreases (or the measurement current decreases with the increase of the input voltage) while the input current increases. The magnetoresistance effect refers to an effect in which the resistivity of a sample is affected by an external magnetic field. The negative resistance effect and the magnetoresistance effect are widely used in the fields of pulse generators, magnetic memories, and the like, respectively, and thus have received much attention. With the development and application of semiconductors in the field of electronic information, people put higher demands on high-density integration and miniaturization of electronic devices. The advent of multifunction devices has provided a potential solution to this.
In the prior art, a plurality of negative resistance devices and magnetic resistance devices with excellent performance are designed, but due to the influence of factors such as device structures, materials for forming the devices and the like, the coexistence of the negative resistance effect and the unsaturated magnetic resistance effect is difficult to realize. And the coexistence characteristic of the negative resistance and the unsaturated magnetic resistance is utilized, which is helpful for promoting the development of novel multifunctional devices with higher integration level and better performance, such as pulse generators with high magnetic sensitivity characteristic, novel multifunctional magnetic memories and the like. Therefore, how to design a device with both negative resistance and unsaturated magnetoresistance is of great significance.
Disclosure of Invention
In view of the above drawbacks and needs of the prior art, the present invention provides a device with coexisting negative resistance and unsaturated magnetoresistance effects based on local impact ionization, thereby solving the technical problem that negative resistance and unsaturated magnetoresistance do not easily coexist in the same device.
To achieve the above object, according to one aspect of the present invention, there is provided a device in which negative resistance and unsaturated magnetoresistance effects based on local impact ionization coexist, the device comprising: a semiconductor substrate and two metal electrodes;
the two metal electrodes are respectively arranged on the same surface of the semiconductor substrate, and at least one metal electrode is positioned on the edge of the surface of the semiconductor substrate;
the semiconductor substrate is used for enhancing the electric field intensity of a local non-uniform electric field formed in the semiconductor substrate after continuously increased current is obtained, so that local impact ionization in the semiconductor substrate is caused, and an equivalent carrier injection effect is generated, so that the device forms a negative resistance effect;
the semiconductor substrate is also used for generating non-uniform change of internal carriers under the action of a magnetic field which is not parallel to the current direction due to the action of Lorentz force, so that the device presents a non-saturated magnetoresistance effect, and the negative resistance effect and the non-saturated magnetoresistance effect coexist in the same device.
Preferably, the material of the semiconductor substrate is one of Ge, Si, GaAs, and GaN semiconductor lightly-doped non-magnetic materials.
Preferably, the semiconductor substrate has a rectangular parallelepiped structure.
Preferably, the material of the metal electrode is one of In, Ag, Cu, Au or Pt nonmagnetic metals.
Preferably, the two metal electrodes form ohmic contacts with the semiconductor base body.
According to another aspect of the present invention, there is provided a system for coexistence of negative resistance and non-saturated magnetoresistance effect based on local impact ionization, comprising the above-mentioned device for coexistence of negative resistance and non-saturated magnetoresistance effect based on local impact ionization, further comprising a current source and a magnetic field generating device;
the current sources are respectively connected with the two metal electrodes; the magnetic field generating device is used for generating a magnetic field which is not parallel to the current direction of the current source;
the current source applies continuously increased current to the two metal electrodes, so that the electric field intensity of a local non-uniform electric field formed in the semiconductor substrate is enhanced, local impact ionization in the semiconductor substrate is caused, and an equivalent carrier injection effect is generated, so that the device forms a negative resistance effect;
the inner current carrier of the semiconductor substrate generates non-uniform change under the action of the magnetic field due to the action of Lorentz force, so that the device presents a non-saturated magnetoresistance effect, and the negative resistance effect and the non-saturated magnetoresistance effect coexist in the same device.
Preferably, a voltmeter is further included, and the voltmeter is used for measuring the voltage between the two metal electrodes.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
1. according to the invention, two metal electrodes are respectively arranged on the same surface of the semiconductor substrate, at least one metal electrode is arranged on the edge of the surface of the semiconductor substrate, and after current and a magnetic field are respectively applied, a device with coexisting negative resistance and unsaturated magnetoresistance effects can be obtained, and the device has the advantages of simple structure, mature performance measurement method and easiness in production and application;
2. the device of the present invention can be applied to the development of novel multifunctional devices such as a pulse generator having high magnetic sensitivity characteristics, a novel multifunctional magnetic memory device, and the like.
Drawings
FIG. 1 is a schematic structural diagram of a device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization according to the present invention;
FIG. 2 is a measurement schematic diagram of a device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization according to the present invention;
FIG. 3 is a graph of V-I curves measured at 300K under different magnetic field conditions in an example of the present invention;
FIG. 4 is a schematic diagram of electric field lines of a device in an embodiment of the invention;
FIG. 5 shows V calculated in an embodiment of the present inventionpeak/V100mAA plot of variation with magnetic field strength;
FIG. 6 is a graph of MR-B at currents corresponding to an example of 80mA and 100mA at a temperature of 300K as calculated in an embodiment of the present invention;
FIG. 7 is a schematic diagram showing device measurements of a comparative example in accordance with an embodiment of the present invention;
FIG. 8 is a corresponding V-I curve measured at 300K temperature under zero magnetic field conditions for comparative examples in accordance with an embodiment of the present invention;
fig. 9 is a schematic diagram of electric field lines for a comparative example device in an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
FIG. 1 is a schematic structural diagram of a device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact. As shown in FIG. 1, the invention proposes a device with coexisting negative resistance and unsaturated magnetoresistance effects based on local impact ionization, comprising a semiconductor substrate and two metal electrodes. Specifically, the semiconductor substrate is of a rectangular structure, the two metal electrodes are respectively arranged on the same surface of the semiconductor substrate, and at least one metal electrode is located on the edge of the surface of the semiconductor substrate.
In a further description, by applying continuously increased current to the two metal electrodes, the electric field strength of a local non-uniform electric field formed in the semiconductor substrate is increased, so that local impact ionization occurs in the semiconductor substrate, and an equivalent carrier injection effect is generated, so that the device forms a negative resistance effect; the device is placed in a magnetic field, and internal carriers of the semiconductor substrate are subjected to non-uniform change under the action of the magnetic field due to the action of Lorentz force, so that the device presents a non-saturated magnetoresistance effect, and the negative resistance effect and the non-saturated magnetoresistance effect coexist in the device.
In a further description, the material of the semiconductor substrate is one of Ge, Si, GaAs, and GaN semiconductor lightly doped non-magnetic materials.
In a further description, the material of the metal electrode is one of In, Ag, Cu, Au or Pt nonmagnetic metals.
FIG. 2 is a measurement schematic diagram of a device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact. In one embodiment of the present invention, as shown in fig. 2, the semiconductor substrate is a non-magnetic p-Ge: ga is used as a semiconductor base material, and the material of the metal electrode is In. The preparation method of the semiconductor substrate and the metal electrode comprises the following steps:
selectingGa is used as a semiconductor base material, the room temperature resistivity of the material is 10-30 omega cm, and the thickness of the material is 0.5 mm. The carrier concentration and mobility of the selected semiconductor substrate are respectively about 2.6 multiplied by 10 under the temperature of 300K measured by Van der Pager method14cm-3And 2X 103cm2·V-1·s-1. An alloy lettering pen was used to cut a strip having an average length of about 3.4mm and an average width of about 3.0 mm. And ultrasonically cleaning the cut base material for 10min by using acetone and absolute ethyl alcohol in sequence to ensure that the surface of the base material is cleaned, finally taking out the cleaned base material, and drying the surface by using argon. Preparing two metal In electrodes at two ends of a certain surface of the semiconductor by an indium welding method, leading out a lead by silver paste, and obtaining the required device after the silver paste is solidified. Because indium is not easy to be oxidized In the air environment at room temperature, a very thin oxide layer can be formed on the surface at a higher temperature to prevent further oxidation, and the main component of the prepared electrode is In.
Stated further, the direction of the current applied to the two metal electrodes is not parallel to the direction of the magnetic field in which the device is placed. The direction of the magnetic field and the direction of the current have a certain included angle, and when the included angle tends to 90 degrees, the current carriers in the semiconductor are more likely to generate non-uniform change due to the action of Lorentz force, so that the obvious unsaturated magnetoresistance effect is favorably observed.
As shown In fig. 2, the current source In the embodiment of the present invention supplies a current to the entire device through two In electrodes, and then measures the voltage across the metal electrodes using a voltmeter. The direction of the applied magnetic field is parallel to the device surface and perpendicular to the direction along the lines of the two electrodes.
Further, the electric transport performance of the manufactured device is measured by a two-wire method under the conditions of 300K temperature and different magnetic fields, the applied current range is 0-100 mA, and the formula V is [ V (B)+)+V(B-)]The results of the elimination of the Hall effect are shown in FIG. 3, where V (B)+) And V (B)-) Positive and negative magnetic fields are applied, respectively. It can be seen from FIG. 3 that when no magnetic field is applied, the magnetic field is appliedWith increasing applied current, the measured voltage first shows a linear increasing trend with current through the origin, indicating that the In electrode forms an ohmic contact with the semiconductor. The current is continuously increased, the measured voltage shows a nonlinear increasing trend, and the fitting finds that the current and the voltage are close to the peak value (V) of the voltagepeak) At that time, deviation from I ℃. alpha.V has begun2And (4) relationship. This suggests that this non-linear conduction mechanism does not stem solely from space charge effects. Analysis has shown that even intrinsic impact ionization of Ge corresponds to electric field strengths as high as about 105V/cm, but the device electric field distribution provided in this embodiment is non-uniform (as shown in fig. 4), which means that the local electric field strength can reach that required for semiconductor germanium breakdown. Therefore, there is also a local impact ionization effect within the semiconductor Ge during this process. After the local ionization occurs, the carrier concentration p in the semiconductor increases. According to the formula of semiconductor resistance R
Wherein q is the amount of charge, mupFor the mobility of the semiconductor, l and S are the metal electrode spacing and the sample cross-sectional area, respectively. Wherein the values of q, l and S are constant and mu is at constant temperaturepCan be considered as a constant. Therefore, when the local ionization occurs to a certain extent, the device resistance R gradually starts to decrease, exhibiting a negative resistance effect. I.e. when the measured voltage reaches VpeakAfter that, the current continues to increase, and the measurement voltage is reduced significantly. Important index parameter V corresponding to negative resistance performance in V-I curve obtained by zero magnetic field measurementpeak/V100mA(wherein V100mAThe corresponding measured voltage at a current of 100 mA) is approximately 1.08. FIG. 5 shows V calculated in an embodiment of the present inventionpeak/V100mAAccording to the curve chart of the change along with the magnetic field intensity, after the magnetic field is applied, the carriers are deflected under the action of Lorentz force, the probability of local collision ionization is higher, the electron injection effect is more obvious, and therefore V ispeak/V100mAThe negative resistance effect can be obviously enhanced under the action of the magnetic field. Corresponding measured voltage with magnetismThe field strength increases and appears as a positive magnetoresistance effect. According to calculation formula of magnetic resistance
Wherein R (B) and R (0) are the resistance values of the device under the conditions of applying a magnetic field B with certain intensity and zero magnetic field respectively. In the current range corresponding to the negative resistance, 80mA and 100mA were selected as examples for the magnetoresistance effect analysis, and the results are shown in fig. 6. It can be seen from fig. 6 that the reluctance values at different magnetic fields are symmetric about a zero magnetic field, wherein the reluctance values increase quadratically with the magnetic field strength and then linearly with the magnetic field strength, showing a pronounced tendency to non-saturation, wherein the reluctance values at 1T can reach about 15%. The above analysis has demonstrated that the present invention provides a device with coexisting negative resistance and unsaturated magnetoresistance effects based on local impact ionization, which can enhance the negative resistance effect and simultaneously obtain unsaturated excellent magnetoresistance performance.
The invention also provides a comparative example in which two metal electrodes are not arranged on the same surface of the semiconductor substrate, which specifically comprises the following steps:
ga was selected as a non-magnetic p-Ge which was the same as that of the above-mentioned example, and a long strip having approximately the same average size as that of the example was cut out with an alloy marker. And ultrasonically cleaning the cut base material for 10min by using acetone and absolute ethyl alcohol in sequence to ensure that the surface of the base material is cleaned, finally taking out the cleaned base material, and drying the surface by using argon. And preparing metal In electrodes by an indium welding method, wherein the In electrodes are distributed on two different side surfaces of the semiconductor, then leading out a lead through silver paste, and obtaining the required device after the silver paste is solidified. The measurement method is the same as the above embodiment, and the schematic diagram of the device structure and the performance test method is shown in fig. 7.
FIG. 8 is a corresponding V-I curve measured at 300K temperature under zero magnetic field conditions for comparative examples in accordance with the present invention. As shown in fig. 8, the curve is a straight line through the origin in a smaller current range, and then the measured voltage shows a non-linear increasing trend with current. The negative resistance effect is difficult to observe In the figure, which shows that the negative resistance effect is difficult to form when the metal In electrode is not on the same surface of the semiconductor. Fig. 9 is a schematic view of electric field lines of a device according to a comparative example of the present invention, and it is analytically believed that when In electrodes of metal are welded on both sides of p-Ge: Ga of semiconductor, the electric field lines are relatively more uniformly distributed In the semiconductor after current is applied, the local electric field strength inside the semiconductor is substantially the same, and local impact ionization is difficult to form or weak, and thus it is finally difficult to observe a negative resistance effect In the case of the comparative example, compared with the embodiment.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of localized impact ionization, characterized in that it comprises: a semiconductor substrate and two metal electrodes;
the two metal electrodes are respectively arranged on the same surface of the semiconductor substrate, and at least one metal electrode is positioned on the edge of the surface of the semiconductor substrate;
the semiconductor substrate is used for enhancing the electric field intensity of a local non-uniform electric field formed in the semiconductor substrate after continuously increased current is obtained, so that local impact ionization in the semiconductor substrate is caused, and an equivalent carrier injection effect is generated, so that the device forms a negative resistance effect;
the semiconductor substrate is also used for generating non-uniform change of internal carriers under the action of a magnetic field which is not parallel to the current direction due to the action of Lorentz force, so that the device presents a non-saturated magnetoresistance effect, and the negative resistance effect and the non-saturated magnetoresistance effect coexist in the same device.
2. The device of claim 1, wherein the material of the semiconductor substrate is one of Ge, Si, GaAs, and a lightly doped non-magnetic material in GaN semiconductor.
3. The device based on coexistence of negative resistance and non-saturated magnetoresistance effects of local impact ionization according to claim 1 or 2, characterized in that said semiconductor body is a rectangular parallelepiped structure.
4. The device of claim 3, wherein the metal electrode is made of one of In, Ag, Cu, Au or Pt nonmagnetic metal.
5. The device of claim 1 or 4, wherein the two metal electrodes form an ohmic contact with the semiconductor body.
6. The system for coexistence of negative resistance and unsaturated magnetic resistance effects based on local impact ionization is characterized by comprising the device for coexistence of negative resistance and unsaturated magnetic resistance effects based on local impact ionization according to any one of claims 1 to 5, and further comprising a current source and a magnetic field generating device;
the current sources are respectively connected with the two metal electrodes; the magnetic field generating device is used for generating a magnetic field which is not parallel to the current direction of the current source;
the current source applies continuously increased current to the two metal electrodes, so that the electric field intensity of a local non-uniform electric field formed in the semiconductor substrate is enhanced, local impact ionization in the semiconductor substrate is caused, and an equivalent carrier injection effect is generated, so that the device forms a negative resistance effect;
the inner current carrier of the semiconductor substrate generates non-uniform change under the action of the magnetic field due to the action of Lorentz force, so that the device presents a non-saturated magnetoresistance effect, and the negative resistance effect and the non-saturated magnetoresistance effect coexist in the same device.
7. The coexisting system of negative resistance and non-saturated magnetoresistance effects based on localized impact ionization according to claim 6, further comprising a voltmeter for measuring the voltage between the two metal electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011156234.7A CN112331769B (en) | 2020-10-26 | 2020-10-26 | Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011156234.7A CN112331769B (en) | 2020-10-26 | 2020-10-26 | Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112331769A true CN112331769A (en) | 2021-02-05 |
| CN112331769B CN112331769B (en) | 2022-09-27 |
Family
ID=74311802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011156234.7A Active CN112331769B (en) | 2020-10-26 | 2020-10-26 | Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112331769B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1123145A (en) * | 1965-12-21 | 1968-08-14 | Telefunken Patent | Improvements in or relating to gunn effect apparatus |
| FR1560104A (en) * | 1967-07-05 | 1969-03-14 | ||
| JPH05275718A (en) * | 1992-03-30 | 1993-10-22 | Hamamatsu Photonics Kk | Switching memory device |
| US20090261436A1 (en) * | 2007-09-28 | 2009-10-22 | Canon Anelva Corporation | Negative-resistance device with the use of magneto-resistive effect |
| CN110518116A (en) * | 2019-08-06 | 2019-11-29 | 武汉理工大学 | The device for having both unsaturation magnetic resistance and negative differential resistance feature based on avalanche effect |
| CN111010096A (en) * | 2019-11-27 | 2020-04-14 | 北京航空航天大学青岛研究院 | Circuit structure for realizing magneto-resistance ratio amplification based on negative resistance effect device |
-
2020
- 2020-10-26 CN CN202011156234.7A patent/CN112331769B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1123145A (en) * | 1965-12-21 | 1968-08-14 | Telefunken Patent | Improvements in or relating to gunn effect apparatus |
| FR1560104A (en) * | 1967-07-05 | 1969-03-14 | ||
| JPH05275718A (en) * | 1992-03-30 | 1993-10-22 | Hamamatsu Photonics Kk | Switching memory device |
| US20090261436A1 (en) * | 2007-09-28 | 2009-10-22 | Canon Anelva Corporation | Negative-resistance device with the use of magneto-resistive effect |
| CN110518116A (en) * | 2019-08-06 | 2019-11-29 | 武汉理工大学 | The device for having both unsaturation magnetic resistance and negative differential resistance feature based on avalanche effect |
| CN111010096A (en) * | 2019-11-27 | 2020-04-14 | 北京航空航天大学青岛研究院 | Circuit structure for realizing magneto-resistance ratio amplification based on negative resistance effect device |
Non-Patent Citations (2)
| Title |
|---|
| HE XIONG 等: "negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown", 《JOURNAL OF PHYSICS》 * |
| JIAYI LIU: "negative differential resistance and magnetoresistance in zigzag borophene nanoribbons", 《INTERNATIONAL JOURNAL OF MODERN PHYSICS B》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112331769B (en) | 2022-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Banerjee et al. | Reducing contact resistance in two-dimensional-material-based electrical contacts by roughness engineering | |
| WO2009132165A2 (en) | Microfabrication of carbon-based devices such as gate-controlled graphene devices | |
| US9324804B2 (en) | Graphene-on-semiconductor substrates for analog electronics | |
| CN112331769B (en) | Device based on coexistence of negative resistance and unsaturated magnetoresistance effects of local impact ionization | |
| CN109119499B (en) | Diamond radiation detector and preparation method thereof | |
| CN110518116B (en) | Device with unsaturated magnetic resistance and negative differential resistance characteristics based on avalanche effect | |
| Bray | Minority carrier extraction in germanium | |
| Sağlam et al. | The effects of the time-dependent on the characteristic parameters of polypyrrole/p-type Si/Al diode | |
| Irhzo et al. | The role of alloyed tungsten on the conductivity of stainless steel passive layers | |
| CN108807211B (en) | Device for measuring magnetic resistance of two-dimensional semiconductor material and manufacturing method thereof | |
| CN115602721A (en) | Method and assembly for reducing contact resistance | |
| Smyth | Solid‐State Anodic Oxidation of Tantalum | |
| CN109994568B (en) | Laser-triggered high-power semi-insulating AlGaN/GaN switch with stack structure | |
| Yang et al. | Transient two-state characteristics in MIS (p) tunnel diode with edge-thickened oxide (ETO) structure | |
| KR930000793B1 (en) | Improved position sensor | |
| Bhattacharya et al. | Electron transport characteristics of FeGa, Ni/n-Si junctions by impedance spectroscopy | |
| Chino et al. | A degradation mechanism for ohmic contacts in GaAs devices | |
| Abdula et al. | Three-point probe 1/f noise measurement | |
| Ando et al. | Fabrication of Low-Threshold Discreet Schottky Barrier Diode Using Natural Pyrite Crystal | |
| Chen et al. | Evaluation of Nd–Al doped indium-zinc oxide thin-film transistors by a μ-PCD method | |
| de Vries | Taking topological insulators for a spin: Towards understanding of spin and charge transport in Bi2Se3 | |
| US10879476B1 (en) | Organic thin film transistor and method of manufacturing the same | |
| Lin et al. | Fluctuation-induced tunneling conduction through RuO2 nanowire contacts | |
| CN213782029U (en) | Interdigital electrode GaN alpha particle detector | |
| Carver et al. | Hot electron transport effects in lead telluride |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |