CN112331692B - Light-emitting device with semiconductor light-emitting diode chip - Google Patents
Light-emitting device with semiconductor light-emitting diode chip Download PDFInfo
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- CN112331692B CN112331692B CN202011263316.1A CN202011263316A CN112331692B CN 112331692 B CN112331692 B CN 112331692B CN 202011263316 A CN202011263316 A CN 202011263316A CN 112331692 B CN112331692 B CN 112331692B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
The invention relates to a light-emitting device with a semiconductor light-emitting diode chip, belongs to the technical field of light-emitting devices, and solves the problems that the existing semiconductor light-emitting device is poor in color transition and different in sensory color and actual color. The light emitting layer of the light emitting device having the semiconductor light emitting diode chip includes a plurality of arrays of pixel blocks, each of which includes a first pixel unit, a second pixel unit, a third pixel unit, and a fourth pixel unit; the first pixel unit, the second pixel unit, the third pixel unit and the fourth pixel unit are all circular, the first pixel unit is tangent to the second pixel unit, the second pixel unit is tangent to the third pixel unit, the third pixel unit is tangent to the fourth pixel unit, and the fourth pixel unit is tangent to the first pixel unit. The invention can emit light with any color and ensure that human eyes have the same perception degree on light with various colors.
Description
Technical Field
The present invention relates to the field of light emitting devices, and particularly to a light emitting device having a semiconductor light emitting diode chip.
Background
With the progress of high brightness and multi-color of light emitting diodes, the application fields are expanding. From a low luminous flux indicator light to a display screen, then from an outdoor display screen to a medium luminous flux power signal lamp and a white light source for special illumination, and finally to a high luminous flux general illumination light source.
When the color-changeable light-emitting device is used for a low-pass indicator light or a display screen, colors are often required to be changed according to actual use requirements, the existing color-changeable light-emitting device usually adopts a mode of switching several monochromatic lights, color gamut transition is difficult to realize, and meanwhile, the color of emitted light is different from the sensory color of human eyes due to different sensitivity degrees of human eyes to blue light, green light and red light.
Disclosure of Invention
In view of the above analysis, the present invention is directed to a light emitting device having a semiconductor light emitting diode chip, so as to solve the problems of the conventional semiconductor light emitting device, such as poor color transition and difference between the sensory color and the actual color.
The purpose of the invention is mainly realized by the following technical scheme:
in a technical solution of the present invention, a light emitting device having a semiconductor light emitting diode chip includes a plurality of semiconductor light emitting diode chips, the semiconductor light emitting diode chips including: a light emitting layer; the euphotic layer is used for adjusting the light emitted by the luminous layer; the circuit layer is electrically connected with the luminous layer and is positioned on one side of the luminous layer, which is far away from the euphotic layer; the back plate is positioned on one side of the circuit layer, which is far away from the luminous layer; wherein the light emitting layer comprises a plurality of arrays of pixel blocks, each of the pixel blocks comprising a first pixel unit, a second pixel unit, a third pixel unit and a fourth pixel unit; the first pixel unit, the second pixel unit, the third pixel unit and the fourth pixel unit are all circular, the first pixel unit is tangent to the second pixel unit, the second pixel unit is tangent to the third pixel unit, the third pixel unit is tangent to the fourth pixel unit, and the fourth pixel unit is tangent to the first pixel unit.
In the technical scheme of the invention, the pixel block is rectangular and comprises a first side edge, a second side edge, a third side edge and a fourth side edge which are sequentially connected; the first pixel unit is tangent to the first side, the first pixel unit and the second pixel unit are tangent to the second side, the second pixel unit and the third pixel unit are tangent to the third side, and the first pixel unit and the fourth pixel unit are tangent to the fourth side.
In the technical solution of the present invention, the diameter of the second pixel unit is smaller than the diameter of the first pixel unit, and the diameter of the second pixel unit is greater than or equal to 1/2 of the diameter of the first pixel unit.
In the technical solution of the present invention, the diameter of the third pixel unit is smaller than the diameter of the second pixel unit.
In the technical solution of the present invention, the diameter of the fourth pixel unit is smaller than the diameter of the second pixel unit.
In the technical scheme of the invention, the first pixel unit, the second pixel unit and the third pixel unit all emit monochromatic light, and the wavelengths are increased in sequence.
In the technical scheme of the invention, the fourth pixel unit emits white light.
In the technical solution of the present invention, the circuit layer includes:
a first circuit electrically connected to all the first pixel units;
a second circuit electrically connected to all the second pixel units;
a third circuit electrically connected to all the third pixel units;
and the fourth circuit is electrically connected with all the fourth pixel units.
In the technical scheme of the invention, the first circuit, the second circuit, the third circuit and the fourth circuit are all control circuits.
In the technical solution of the present invention, the control circuit includes:
a power source; a switch for switching on or off the power supply; and the controller is used for adjusting the current or the voltage of the control circuit.
The technical scheme of the invention can at least realize one of the following effects:
1. the pixel blocks can emit light with any color by matching the pixel units and controlling the brightness of the pixel units with different colors;
2. the invention rounds the pixel unit, which is helpful to ensure the whole brightness;
3. the pixel units with different colors are different in size, the brightness of low-sensitivity colors is improved, and meanwhile, the fourth pixel unit of white light is arranged to improve the overall brightness.
In the invention, the technical schemes can be combined with each other to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout.
FIG. 1 is a layered structure diagram of an embodiment of the present invention;
fig. 2 is a schematic diagram of a pixel block according to an embodiment of the present invention.
Reference numerals:
1, a light-transmitting layer; 2, a light emitting layer; 21, a block of pixels; 211, a first pixel unit; 212, a second pixel unit; 213, a third pixel unit; 214, a fourth pixel cell; 3, a circuit layer; 4, a substrate.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and which together with the embodiments of the invention serve to explain the principles of the invention and not to limit its scope.
In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly stated or limited, the term "connected" should be interpreted broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection, which may be a mechanical connection, an electrical connection, which may be a direct connection, or an indirect connection via an intermediate medium. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The terms "top," "bottom," "above … …," "below," and "on … …" as used throughout the description are relative positions with respect to components of the device, such as the relative positions of the top and bottom substrates inside the device. It will be appreciated that the devices are multifunctional, regardless of their orientation in space.
As shown in fig. 1 and fig. 2, an embodiment of the present invention provides a light emitting device with semiconductor light emitting diode chips, including a plurality of semiconductor light emitting diode chips, where each of the semiconductor light emitting diode chips includes: a light-emitting layer 2; the euphotic layer 1 is used for adjusting the light emitted by the luminous layer 2; the circuit layer 3 is electrically connected with the light emitting layer 2 and is positioned on one side of the light emitting layer 2, which is far away from the light transmitting layer 1; the back plate is positioned on one side of the circuit layer 3, which is far away from the luminescent layer 2; wherein the light emitting layer 2 comprises a plurality of arrays of pixel blocks 21, each pixel block 21 comprising a first pixel unit 211, a second pixel unit 212, a third pixel unit 213 and a fourth pixel unit 214; the first pixel unit 211, the second pixel unit 212, the third pixel unit 213 and the fourth pixel unit 214 are all circular, the first pixel unit 211 is tangent to the second pixel unit 212, the second pixel unit 212 is tangent to the third pixel unit 213, the third pixel unit 213 is tangent to the fourth pixel unit 214, and the fourth pixel unit 214 is tangent to the first pixel unit 211.
According to the light emitting device provided by the embodiment of the invention, each semiconductor light emitting diode chip is provided with the pixel blocks 21 in the plurality of arrays, each pixel block 21 is provided with four pixel units, the light emitting of any color of the pixel block 21 is realized by adjusting the color matching mode of the pixel units, and meanwhile, the pixel units are arranged in the circular shape, so that the brightness of the pixel units is improved, and the human eyes can more easily perceive light. In addition, the pixel units are tangentially arranged, which is beneficial to improving the space utilization rate in the pixel block 21, so that the pixel unit area occupation ratio of the unit area of the light-emitting device is higher, and the brightness of the light-emitting device is higher. The light emitted from the light emitting layer 2 passes through the light transmitting layer 1 and is emitted to the outside of the embodiment of the present invention, and the light transmitting layer 1 can better mix the light emitted from different pixel units to avoid the occurrence of light spots, and generally adopts a translucent film with a certain light transmittance.
In order to facilitate the array of the pixel blocks 21, in the embodiment of the present invention, the pixel blocks 21 are rectangular, and include a first side, a second side, a third side, and a fourth side that are connected in sequence;
the first pixel unit 211 is tangent to the first side, the first pixel unit 211 and the second pixel unit 212 are tangent to the second side, the second pixel unit 212 and the third pixel unit 213 are tangent to the third side, and the first pixel unit 211 and the fourth pixel unit 214 are tangent to the fourth side.
The rectangular pixel block 21 facilitates the array of the pixel block 21, and increases the effective light emitting area of the light emitting device according to the embodiment of the present invention, and in addition, the tangent relationship between the first pixel unit 211, the second pixel unit 212, the third pixel unit 213, and the fourth pixel unit 214 and the first side, the second side, the third side, and the fourth side is also beneficial to increasing the effective light emitting area of the light emitting device, so as to increase the brightness of the light emitting device according to the embodiment of the present invention.
In the embodiment of the present invention, the first pixel unit 211, the second pixel unit 212, and the third pixel unit 213 all emit monochromatic light, and the wavelengths are sequentially increased, for example, when red, green, and blue are used as basic colors, the first pixel unit 211 emits blue light, the second pixel unit 212 emits green light, and the third pixel unit 213 emits red light, and through different luminance combinations of red, green, and blue, light of any color of the real pixel block 21 can be emitted.
In the embodiment of the present invention, the fourth pixel unit 214 emits white light as the brightness supplement of the pixel block 21, and changes the brightness of the pixel block 21 according to the intensity of the white light, and at the same time, performs brightness compensation on some color lights which are insensitive to human eyes.
Because human eyes have lower sensitivity to blue light with smaller wavelength than red light with larger wavelength, the red light emitted by the semiconductor diode is brighter than the blue light in the same light-emitting circuit. In the embodiment of the present invention, the diameter of the second pixel unit 212 is smaller than the diameter of the first pixel unit 211, and the diameter of the second pixel unit 212 is greater than or equal to 1/2 of the diameter of the first pixel unit 211; the diameter of the third pixel unit 213 is smaller than that of the second pixel unit 212. The basic brightness of the blue light of the first pixel unit 211 is higher than that of the green light of the second pixel unit 212 and that of the red light of the third pixel unit 213 in the embodiment of the present invention, so that the brightness of the blue light, the green light and the red light sensed by the human eye is substantially the same on the premise of the white light compensation of the same fourth pixel unit 214.
In the embodiment of the present invention, so-called indicator lamps are usually used, so that the color of the light emitted from the whole luminescent layer 2 is consistent, and therefore the circuit takes the uniformity as the priority, specifically, the circuit layer 3 includes:
a first circuit electrically connected to all the first pixel units 211;
a second circuit electrically connected to all the second pixel units 212;
a third circuit electrically connected to all the third pixel units 213;
and a fourth circuit electrically connected to all the fourth pixel cells 214.
In the embodiment of the invention, the circuits correspond to the types of the pixel units one by one, and whether all the corresponding pixel units emit light or not and the light emitting brightness are controlled through different circuits, so that the display light emitting of each color in the embodiment of the invention is realized.
The first circuit, the second circuit, the third circuit and the fourth circuit in the embodiment of the invention are all control circuits with the same principle. The control circuit includes:
the power supply is shared by all the semiconductor light-emitting diode chips; a switch for switching on or off the power supply; and the controller is used for adjusting the current or the voltage of the control circuit.
The embodiment of the invention controls whether the pixel unit of a certain color emits light or not through the switch, and adjusts the current or the voltage of the corresponding circuit through the controller, thereby adjusting the brightness of the pixel unit of the corresponding color to realize the light emission of different colors.
When the embodiment of the invention is used, a plurality of embodiments of the invention can be arrayed or spliced for use so as to achieve the purposes of simple and convenient overall color or basic pattern display.
In summary, the present invention provides a light emitting device with a semiconductor light emitting diode chip, and the pixel block 21 can emit light of any color by matching the pixel units and controlling the brightness of the pixel units of different colors; the invention rounds the pixel unit, which is helpful to ensure the whole brightness; the pixel units with different colors have different sizes, so that the brightness of low-sensitivity colors is improved, and meanwhile, the fourth pixel unit 214 of white light is arranged to improve the overall brightness.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also included in the scope of the present invention.
Claims (9)
1. A light-emitting device having a semiconductor light-emitting diode chip, comprising a plurality of semiconductor light-emitting diode chips, the semiconductor light-emitting diode chips comprising:
a light emitting layer;
the euphotic layer is used for adjusting the light emitted by the luminous layer;
the circuit layer is electrically connected with the luminous layer and is positioned on one side of the luminous layer, which is far away from the euphotic layer;
the back plate is positioned on one side of the circuit layer, which is far away from the luminous layer;
wherein the light emitting layer comprises a plurality of arrays of pixel blocks, each of the pixel blocks comprising a first pixel unit, a second pixel unit, a third pixel unit and a fourth pixel unit; the first pixel unit, the second pixel unit, the third pixel unit and the fourth pixel unit are all circular, the first pixel unit is tangent to the second pixel unit, the second pixel unit is tangent to the third pixel unit, the third pixel unit is tangent to the fourth pixel unit, and the fourth pixel unit is tangent to the first pixel unit;
the pixel block is rectangular and comprises a first side edge, a second side edge, a third side edge and a fourth side edge which are sequentially connected;
the first pixel unit is tangent to the first side, the first pixel unit and the second pixel unit are tangent to the second side, the second pixel unit and the third pixel unit are tangent to the third side, and the first pixel unit and the fourth pixel unit are tangent to the fourth side.
2. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 1, wherein the diameter of the second pixel unit is smaller than the diameter of the first pixel unit, and the diameter of the second pixel unit is equal to or larger than 1/2 of the diameter of the first pixel unit.
3. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 1, wherein a diameter of the third pixel unit is smaller than a diameter of the second pixel unit.
4. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 1, wherein a diameter of the fourth pixel unit is smaller than a diameter of the second pixel unit.
5. The light-emitting device with a semiconductor light-emitting diode chip as claimed in any one of claims 1 to 4, wherein the first pixel unit, the second pixel unit and the third pixel unit are all semiconductor diodes, emit monochromatic light, and have sequentially increasing wavelengths.
6. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 5, wherein the fourth pixel unit is a semiconductor diode and emits white light.
7. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 1, wherein the circuit layer comprises:
a first circuit electrically connected to all the first pixel units;
a second circuit electrically connected to all the second pixel units;
a third circuit electrically connected to all the third pixel units;
and the fourth circuit is electrically connected with all the fourth pixel units.
8. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 7, wherein the first circuit, the second circuit, the third circuit, and the fourth circuit are all control circuits.
9. The light-emitting device with a semiconductor light-emitting diode chip as claimed in claim 8, wherein the control circuit comprises:
a power source;
a switch for switching on or off the power supply;
and the controller is used for adjusting the current or the voltage of the control circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011263316.1A CN112331692B (en) | 2020-11-12 | 2020-11-12 | Light-emitting device with semiconductor light-emitting diode chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011263316.1A CN112331692B (en) | 2020-11-12 | 2020-11-12 | Light-emitting device with semiconductor light-emitting diode chip |
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| Publication Number | Publication Date |
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| CN112331692A CN112331692A (en) | 2021-02-05 |
| CN112331692B true CN112331692B (en) | 2021-06-11 |
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| CN202011263316.1A Active CN112331692B (en) | 2020-11-12 | 2020-11-12 | Light-emitting device with semiconductor light-emitting diode chip |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6529239B1 (en) * | 1998-06-01 | 2003-03-04 | Fairchild Imaging, Inc. | Image sensor with stripes of cyan filter material perpendicular to stripes of yellow filter material |
| CN1588197A (en) * | 2004-07-16 | 2005-03-02 | 胜华科技股份有限公司 | Color filter with brightening structure |
| CN1591549A (en) * | 2003-08-25 | 2005-03-09 | 精工爱普生株式会社 | Electro-optical device, driving method therefor, and electronic apparatus |
| CN103366683A (en) * | 2013-07-12 | 2013-10-23 | 上海和辉光电有限公司 | Pixel array, display and method for displaying image on display |
| CN105047092A (en) * | 2015-08-06 | 2015-11-11 | 上海和辉光电有限公司 | Display and pixel array thereof |
-
2020
- 2020-11-12 CN CN202011263316.1A patent/CN112331692B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6529239B1 (en) * | 1998-06-01 | 2003-03-04 | Fairchild Imaging, Inc. | Image sensor with stripes of cyan filter material perpendicular to stripes of yellow filter material |
| CN1591549A (en) * | 2003-08-25 | 2005-03-09 | 精工爱普生株式会社 | Electro-optical device, driving method therefor, and electronic apparatus |
| CN1588197A (en) * | 2004-07-16 | 2005-03-02 | 胜华科技股份有限公司 | Color filter with brightening structure |
| CN103366683A (en) * | 2013-07-12 | 2013-10-23 | 上海和辉光电有限公司 | Pixel array, display and method for displaying image on display |
| CN105047092A (en) * | 2015-08-06 | 2015-11-11 | 上海和辉光电有限公司 | Display and pixel array thereof |
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| CN112331692A (en) | 2021-02-05 |
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