CN112331683A - Backside illuminated image sensor and method for manufacturing the same - Google Patents
Backside illuminated image sensor and method for manufacturing the same Download PDFInfo
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- CN112331683A CN112331683A CN202011294632.5A CN202011294632A CN112331683A CN 112331683 A CN112331683 A CN 112331683A CN 202011294632 A CN202011294632 A CN 202011294632A CN 112331683 A CN112331683 A CN 112331683A
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title description 14
- 239000000463 material Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 34
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 31
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 238000005286 illumination Methods 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 230000008439 repair process Effects 0.000 abstract description 11
- 238000002360 preparation method Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a back-illuminated image sensor and a preparation method thereof. The back side illumination type image sensor comprises a substrate, and further comprises a buffer layer, a high dielectric constant layer and a metal oxide layer which are sequentially stacked from the back side after the substrate is thinned, wherein the material of the buffer layer comprises silicon oxide, the dielectric constant of the material of the high dielectric constant layer is larger than that of the silicon oxide, and the material of the metal oxide layer can transmit light and the Gibbs free energy is higher than that of the silicon oxide. The preparation method of the back side illumination type image sensor comprises the following steps: and growing a buffer layer on the back surface of the thinned substrate, then growing a high-dielectric-constant layer, then growing a metal oxide layer on the high-dielectric-constant layer, and then carrying out nitrogen-hydrogen mixed atmosphere annealing. The back-illuminated image sensor and the preparation method thereof have the advantages of strong interface repair capability, simple structure and easy implementation.
Description
Technical Field
The present invention relates to the field of semiconductor device technology, and more particularly, to a backside illuminated image sensor and a method for fabricating the same.
Background
For the back side illuminated image sensor, the new silicon surface exposed after the back side process thinning has defects, dangling bonds and damages, which are main sources of the dark current of the silicon surface of the back side illuminated image sensor. If the back-illuminated image sensor cannot solve the problem of silicon surface dark current newly added on the back surface, the noise of the back-illuminated image sensor is increased sharply compared with that of the front-illuminated image sensor, the imaging quality is greatly reduced, and even effective imaging is difficult. Therefore, improving the quality of the silicon interface and reducing the dark current source on the silicon surface become the key for the application of the back-illuminated image sensor.
In general, methods for improving the interface quality of a back-illuminated image sensor grow SiO on the surface of a substrate2And then annealing is performed in a hydrogen atmosphere. Growing SiO2Surface passivation treatment is carried out to reduce Si interface defects and dangling bonds of the substrate, H2Annealing further repairs the surface dangling bonds. The existing method for improving the interface quality of the back-illuminated image sensor is mature in process and can better repair the interface. However, SiO2Generally, the growth is carried out at low temperature, the compactness of the material is not high, and the repair capability is limited.
Disclosure of Invention
The invention provides a back-illuminated image sensor and a preparation method thereof, which are characterized in that silicon oxide grows on the surface of a substrate, then metal oxide is matched, and annealing is carried out in hydrogen atmosphere, so that the interface quality of the back-illuminated image sensor is improved.
To achieve the above technical objects, in one aspect, the present invention discloses a back-illuminated image sensor. The back side illumination type image sensor comprises a substrate, and further comprises a buffer layer, a high dielectric constant layer and a metal oxide layer which are sequentially stacked from the back side of the thinned substrate, wherein the buffer layer is made of silicon oxide, the dielectric constant of the high dielectric constant layer is larger than that of the silicon oxide, and the metal oxide layer is made of a material which can transmit light and has a Gibbs free energy higher than that of the silicon oxide.
Further, for the back-illuminated image sensor, the thickness of the buffer layer is between 1nm and 5 nm.
Further, for the back-illuminated image sensor, the material of the high dielectric constant layer includes at least one material of aluminum oxide and hafnium oxide.
Further, for the back-illuminated image sensor, the thickness of the high dielectric constant layer is between 5nm-50 nm.
Further, for the back-illuminated image sensor, the material of the metal oxide layer includes at least one of tantalum oxide, indium oxide, and tin oxide.
Further, for the back-illuminated image sensor, the thickness of the metal oxide layer is between 5nm and 50 nm.
Further, for the back-illuminated image sensor, the material of the substrate comprises silicon.
Further, the back side illuminated image sensor further comprises light sensing regions arranged in the substrate in a spaced manner, wherein the light sensing regions comprise photodiodes.
Further, for the back-illuminated image sensor, the thickness of the thinned substrate is between 2 and 10 μm.
In order to achieve the above technical objects, in another aspect, the present invention discloses a method for manufacturing a back-illuminated image sensor. The preparation method of the back-illuminated image sensor comprises the following steps: growing a buffer layer on the back of the thinned substrate, then growing a high-dielectric-constant layer, then growing a metal oxide layer on the high-dielectric-constant layer, and then carrying out nitrogen-hydrogen mixed atmosphere annealing, wherein the material of the buffer layer comprises silicon oxide, the dielectric constant of the material of the high-dielectric-constant layer is greater than that of the silicon oxide, and the material of the metal oxide layer is light-transmitting and has Gibbs free energy higher than that of the silicon oxide.
The invention has the beneficial effects that:
according to the back-illuminated image sensor and the preparation method thereof provided by the embodiment of the invention, silicon oxide grows on the surface of the substrate, then metal oxide is matched, and annealing is carried out in the nitrogen-hydrogen mixed atmosphere, so that hydrogen molecules in the nitrogen-hydrogen mixed atmosphere can diffuse to a silicon interface to repair dangling bonds to a certain extent, and on the other hand, the metal oxide further repairs the interface by utilizing oxygen diffusion generated by Gibbs free energy difference in the annealing process, thereby improving the interface. The interface has strong repairing capability, simple structure and easy implementation.
Drawings
In the figure, the position of the upper end of the main shaft,
fig. 1 is a schematic structural diagram of a back-illuminated image sensor according to an embodiment of the present invention;
fig. 2A, fig. 2B, fig. 2C, and fig. 2D are schematic structural diagrams of a back side illuminated image sensor according to another embodiment of the present invention after thinning a back side of a substrate, growing a buffer layer at an interface, growing a high-k layer, and growing a metal oxide layer, respectively;
FIG. 3 is a schematic diagram of oxygen atom diffusion provided by an example of the present invention.
Detailed Description
The back side illuminated image sensor and the method for manufacturing the same according to the present invention will be explained and explained in detail with reference to the drawings attached to the specification.
Fig. 1 is a schematic structural diagram of a back-illuminated image sensor according to an embodiment of the present invention. As shown in fig. 1, the back-illuminated image sensor provided by this embodiment includes a substrate 110, and further includes a buffer layer 120, a high dielectric constant layer 130, and a metal oxide layer 140 that are stacked in this order from the back surface of the substrate 110 after thinning. Wherein the material of the buffer layer 120 includes silicon oxide. The dielectric constant of the material of the high-k layer 130 is greater than the dielectric constant of silicon oxide. The material of the metal oxide layer 140 is light transmissive and has a gibbs free energy higher than that of silicon oxide.
In this embodiment, the material of the substrate 110 may include silicon. The substrate 110 is thinned at the back side, and the thickness of the thinned substrate can be between 2 μm and 10 μm.
The silicon oxide included in the buffer layer 120 may be silicon dioxide (SiO)2). The thickness of the buffer layer 120 may be between 1nm and 5 nm.
The material of the high dielectric constant (K) layer 130 may include, but is not limited to, aluminum oxide (Al)2O3) And hafnium oxide (HfO)2) And the like. The thickness of the high-k layer 130 may be larger than that of the high-k layerBetween 5nm and 50 nm.
The interfacial passivation layer may include a buffer layer 120 and a high dielectric constant layer 130.
The material of the metal oxide layer 140 may include, but is not limited to, one or more of tantalum oxide (TaO), indium oxide (InO), and tin oxide (SnO) to improve the interface by utilizing the gibbs free energy difference to generate oxygen diffusion during annealing. The thickness of the metal oxide layer 140 may be between 5nm and 50nm, and it is difficult to achieve an ideal effect if it is too thin, and if it is too thick, oxygen diffusion is saturated, and the interface improvement effect is not good if the extra thickness is too thick.
The back side illumination image sensor of this embodiment may further include respective light sensing regions 111 separately arranged within the substrate, and the light sensing regions 111 may include Photodiodes (PDs).
Fig. 2A, fig. 2B, fig. 2C, and fig. 2D are schematic structural diagrams of a back side illuminated image sensor according to another embodiment of the present invention after thinning a back side of a substrate, growing a buffer layer at an interface, growing a high-k layer, and growing a metal oxide layer, respectively. As shown in fig. 2A to 2D, the method for manufacturing a back-illuminated image sensor provided by this embodiment includes the steps of: the buffer layer 120 is grown on the back side of the substrate 110 after thinning, then the high-k layer 130 is grown, then the metal oxide layer 140 is grown on the high-k layer 130, and then nitrogen-hydrogen mixed atmosphere annealing is performed. Wherein, the material of the buffer layer 120 includes silicon oxide, the dielectric constant of the material of the high-k layer 130 is greater than that of the silicon oxide, and the material of the metal oxide layer 140 is light-transmissive and has a gibbs free energy higher than that of the silicon oxide.
Specifically, a thin layer of silicon oxide (SiO) may be grown on the back side of a substrate, such as a silicon material, after a thinning process2) Performing interface repair; then, a high-k dielectric layer 130 is grown to perform charge trap (charge trap) on the surface to reduce the dark current on the surface; then, a metal oxide layer 140 is grown on the high-k layer 130, the metal oxide layer 140 is transparent and the Gibbs free energy is higher than that of silicon oxide, and then nitrogen-hydrogen reaction is performedAnnealing in a mixed atmosphere (forming gas). In the annealing process, on one hand, hydrogen (H) molecules in the forming gas can diffuse to the silicon interface to repair dangling bonds to a certain extent, and on the other hand, since the gibbs free energy of the grown metal oxide 140 is higher than that of silicon oxide, oxygen atoms of the grown metal oxide will diffuse to the silicon interface at high temperature to further repair the silicon interface, as shown in fig. 3, thereby improving the interface and reducing the interface dark current source to a greater extent.
In this embodiment, the substrate 110 is back thinned, and the thickness of the thinned substrate 110 may be between 2 microns and 10 microns. The material of the substrate 110 may include silicon. The substrate 110 may further include respective light sensing regions 111 separately arranged therein, and the light sensing regions 111 may include Photodiodes (PDs).
The material of the buffer layer 120 may include silicon oxide such as SiO2The thickness of the buffer layer 120 may be between 1nm and 5 nm.
The material of the high dielectric constant (K) layer 130 may include, but is not limited to, aluminum oxide (Al)2O3) And hafnium oxide (HfO)2) Etc. of one or more of the above materials. The thickness of the high dielectric constant layer 130 may be between 5nm and 50 nm.
The interfacial passivation layer includes a buffer layer 120 and a high dielectric constant layer 130.
The grown metal oxide material is characterized by being transparent and requiring a higher gibbs free energy than silicon oxide, and includes, but is not limited to, one or more of tantalum oxide (TaO), indium oxide (InO), and tin oxide (SnO) to improve the interface by utilizing the difference in gibbs free energy to generate oxygen diffusion during annealing. The thickness of the grown metal oxide layer 140 may be between 5nm and 50nm, and it is difficult to achieve the desired effect if it is too thin, and the oxygen diffusion is saturated if it is too thick, and the interface improvement effect is not good if the extra thickness is too thick.
According to the back-illuminated image sensor and the preparation method thereof provided by the embodiment of the invention, silicon oxide grows on the surface of the substrate, then metal oxide is matched, and annealing is carried out in the nitrogen-hydrogen mixed atmosphere, so that hydrogen molecules in the nitrogen-hydrogen mixed atmosphere can diffuse to a silicon interface to repair dangling bonds to a certain extent, and on the other hand, the metal oxide further repairs the interface by utilizing oxygen diffusion generated by Gibbs free energy difference in the annealing process, thereby improving the interface. The interface has strong repairing capability, simple structure and easy implementation.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, references to the description of the term "the present embodiment," "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and simplifications made in the spirit of the present invention are intended to be included in the scope of the present invention.
Claims (10)
1. A back side illumination type image sensor is characterized by comprising a substrate, and further comprising a buffer layer, a high dielectric constant layer and a metal oxide layer which are sequentially stacked from the back side of the thinned substrate, wherein the material of the buffer layer comprises silicon oxide, the dielectric constant of the material of the high dielectric constant layer is larger than that of the silicon oxide, and the material of the metal oxide layer can transmit light and the Gibbs free energy is higher than that of the silicon oxide.
2. The back-illuminated image sensor of claim 1, wherein the buffer layer has a thickness between 1nm and 5 nm.
3. The back-illuminated image sensor of claim 1, wherein the material of the high dielectric constant layer comprises at least one of aluminum oxide and hafnium oxide.
4. The back-illuminated image sensor of claim 1 or 3, wherein the high dielectric constant layer has a thickness between 5nm and 50 nm.
5. The back-illuminated image sensor of claim 1, wherein the material of the metal oxide layer comprises at least one of tantalum oxide, indium oxide, and tin oxide.
6. The back-illuminated image sensor of claim 1 or 5, wherein the metal oxide layer has a thickness between 5nm and 50 nm.
7. The back-illuminated image sensor of claim 1, wherein the material of the substrate comprises silicon.
8. The back-illuminated image sensor of claim 1 or 7, further comprising respective light sensing regions spaced apart within the substrate, the light sensing regions comprising photodiodes.
9. The back-illuminated image sensor of claim 1 or 7, wherein the thinned thickness of the substrate is between 2 μm and 10 μm.
10. A method of fabricating a back-illuminated image sensor, comprising:
growing a buffer layer on the back of the thinned substrate, then growing a high-dielectric constant layer, then growing a metal oxide layer on the high-dielectric constant layer, then carrying out nitrogen-hydrogen mixed atmosphere annealing,
wherein the material of the buffer layer comprises silicon oxide, the dielectric constant of the material of the high-dielectric-constant layer is larger than that of the silicon oxide, and the material of the metal oxide layer can transmit light and the Gibbs free energy is higher than that of the silicon oxide.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985637A (en) * | 2014-04-30 | 2014-08-13 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof and display device |
| US20170062496A1 (en) * | 2015-08-27 | 2017-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep Trench Isolation Structures and Methods of Forming Same |
| CN107768393A (en) * | 2017-10-20 | 2018-03-06 | 德淮半导体有限公司 | Semiconductor devices and preparation method thereof |
| US20200292391A1 (en) * | 2019-03-14 | 2020-09-17 | Fujitsu Limited | Infrared detector, imaging device including the same, and manufacturing method for infrared detector |
-
2020
- 2020-11-18 CN CN202011294632.5A patent/CN112331683A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985637A (en) * | 2014-04-30 | 2014-08-13 | 京东方科技集团股份有限公司 | Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof and display device |
| US20170062496A1 (en) * | 2015-08-27 | 2017-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep Trench Isolation Structures and Methods of Forming Same |
| CN107768393A (en) * | 2017-10-20 | 2018-03-06 | 德淮半导体有限公司 | Semiconductor devices and preparation method thereof |
| US20200292391A1 (en) * | 2019-03-14 | 2020-09-17 | Fujitsu Limited | Infrared detector, imaging device including the same, and manufacturing method for infrared detector |
Non-Patent Citations (1)
| Title |
|---|
| 编辑委员会: "《化工百科全书》", 化学工业出版社, pages: 198 - 199 * |
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Application publication date: 20210205 |