CN112305753B - Micro-mirror structure, manufacturing method, micro-mirror array and detector - Google Patents
Micro-mirror structure, manufacturing method, micro-mirror array and detector Download PDFInfo
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- CN112305753B CN112305753B CN202011251559.3A CN202011251559A CN112305753B CN 112305753 B CN112305753 B CN 112305753B CN 202011251559 A CN202011251559 A CN 202011251559A CN 112305753 B CN112305753 B CN 112305753B
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/006—Systems in which light light is reflected on a plurality of parallel surfaces, e.g. louvre mirrors, total internal reflection [TIR] lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0668—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror having non-imaging properties
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a micro mirror structure, comprising: the hexagonal light reflection film is suspended on the substrate; six sections of deformation beams are sequentially adjacent from head to tail or are grounded around the outside or the lower position of the outer side of the light reflection film, and each section of deformation beam is respectively connected to the outer side of one corresponding side of the light reflection film in an insulating manner through a fulcrum structure; six support columns respectively supported below the adjacent or connected end point positions of each two sections of deformation beams; the deformation beam generates bending deformation in the upward or downward direction relative to the length direction by electrifying at least one section of deformation beam, the corresponding side of the light reflection film connected with the deformation beam is driven to displace upward or downward, and the deflection or/and the up-and-down floating of the light reflection film towards any preset direction is realized by respectively controlling different combinations of the formed deformation sizes of the deformation beams. The invention also discloses a manufacturing method of the micro-mirror structure, a micro-mirror array and a detector.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits and detectors, in particular to a micro-mirror structure capable of realizing deflection in any direction, a manufacturing method thereof, a micro-mirror array and a detector.
Background
Currently, micromirrors have become an important part of microelectromechanical systems (MEMS) products and have begun to be applied in vehicle-mounted lidar. With the development of autopilot technology, higher and higher requirements are also put forward on the laser radar and the MEMS micro-mirror technology thereof.
The control of the deflection angle of the micromirror is realized by adopting an electrostatic driving mode in the prior art, and the method becomes a mature technology. However, when the deflection angle of the micromirror is adjusted by controlling the electrostatic field, it is often necessary to design a very complex deflection structure, such as a comb structure, which undoubtedly increases the difficulty of control, and it can only achieve deflection of the plane of the micromirror in one fixed axial direction, so that it is difficult to meet the wide demands for the deflection direction of the micromirror in the actual use situation.
Reference is made to:
1) U.S. patent No. 7286278B2 Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates (method of depositing, releasing and packaging microelectronic devices on wafer substrates).
2) US patent US9348136B2 Micromirror apparatus and methods (micromirror device and method).
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a micro-mirror structure, a manufacturing method, a micro-mirror array and a detector.
In order to achieve the above purpose, the present invention provides the following technical solutions:
according to one aspect of the present invention, there is provided a micromirror structure comprising:
a hexagonal light reflecting film configured to be suspended over a substrate;
six sections of deformation beams are configured to be adjacently arranged end to end or are grounded around the outside of the light reflection film or around the position below the light reflection film in sequence, each section of deformation beam is arranged in one-to-one correspondence with one side of the light reflection film, and each section of deformation beam is respectively connected to the outside of the corresponding side of the light reflection film in an insulating manner through a fulcrum structure;
six support columns configured to be separated and supported between the lower part of the adjacent or connected end point positions of each two sections of the deformation beams and the surface of the substrate, and to form electrical connection between each section of the deformation beams and the substrate;
and the deformation beams are electrified to generate bending deformation in the upward or downward direction relative to the length direction of the deformation beams due to the electrified heating, the corresponding sides of the light reflection films connected with the deformation beams are driven to displace upward or downward, and the deflection or/and the upward and downward floating of the light reflection films towards any preset direction are realized by respectively controlling different combinations of the formed deformation sizes of the deformation beams.
Further, the outer side of the light reflection film and the deformation beam are in insulating connection through a heat insulation layer, the heat insulation layer is configured to be provided with protrusions extending towards the direction of each section of the deformation beam, and the protrusions serve as fulcrum structures and overlap the deformation beam, so that the light reflection film and the deformation beam are connected.
Further, the light reflection film is coated on the surface of the heat insulation layer.
Further, the light reflection film is embedded in the inner frame of the frame-shaped heat insulation layer through the outer side thereof.
Further, the protrusions are uniquely arranged between the corresponding sides of each section of the deformed beam and the light reflection film, and are connected to the middle part of the deformed beam in the beam length direction.
Further, the deformation beam is of a multi-layer laminated structure which is overlapped up and down, and the laminated structure comprises a heating resistor layer, a first deformation layer and a second deformation layer; wherein the first deformable layer material has a first coefficient of thermal expansion and the second deformable layer material has a second coefficient of thermal expansion, the relative magnitudes between the first coefficient of thermal expansion and the second coefficient of thermal expansion being different.
According to one aspect of the present invention, the present invention further provides a method for manufacturing a micromirror structure, comprising the steps of:
providing a substrate, and forming a CMOS circuit on the substrate;
forming a sacrificial layer on the surface of the substrate and patterning;
forming six through holes communicated with the CMOS circuit on the sacrificial layer, and filling metal in the through holes to form six conductive support column structures;
sequentially forming a heating resistor layer, a first deformation layer and a second deformation layer on the surface of the sacrificial layer, and patterning to form six sections of deformation beams with stacked structures, wherein each section of deformation beams is formed into a hexagonal arrangement in a head-to-tail sequential adjacent or joint mode, and adjacent or joint endpoints of every two sections of deformation beams are in contact with one corresponding conductive support column;
forming a dielectric heat insulation layer on the surface of the sacrificial layer, patterning, forming a hexagonal heat insulation layer pattern on the surface of the sacrificial layer within a hexagonal area surrounded by each section of the deformation beam, and enabling the outer side of each side of the formed heat insulation layer pattern to be provided with a protrusion lapped to the middle part of a corresponding section of the deformation beam as a fulcrum structure;
forming a hexagonal light reflection film pattern on the surface of the insulating layer pattern;
and removing the sacrificial layer through a release process to form a suspended hexagonal micro-mirror structure.
Further, the first deformable layer material has a first coefficient of thermal expansion and the second deformable layer material has a second coefficient of thermal expansion, the relative magnitudes between the first coefficient of thermal expansion and the second coefficient of thermal expansion being different.
According to an aspect of the present invention, there is further provided a micromirror array having a plurality of any one of the above-mentioned micromirror structures, wherein each of the micromirror structures has a hexagonal shape, and the micromirror structures are arranged side by side on a substrate to form a honeycomb-shaped micromirror array; wherein any one of the micromirror structures is configured to perform deflection toward any predetermined direction or/and floating up and down independently of the other micromirror structures.
According to one aspect of the present invention, there is also provided a detector having any one of the micromirror structures described above; alternatively, it has the micromirror array described above.
Compared with the prior art, the invention has the advantages that the six deformation beams are controlled to bend and deform, so that the hexagonal micro mirror (the light reflecting film) can be conveniently driven to deflect, the micro mirror can deflect towards any preset direction, and the micro mirror can be controlled to float in the vertical direction, thereby greatly meeting various requirements on the deflection direction of the micro mirror in different application scenes. Meanwhile, the six deformation beam structures are arranged to adjust the deflection angle of the hexagonal micro mirror, so that the structure is simple, and the angle control is more accurate and convenient.
Drawings
FIG. 1 is a schematic diagram of a hexagonal micromirror structure according to a first preferred embodiment of the invention.
Fig. 2 is a schematic view of a deformed beam according to a first preferred embodiment of the present invention.
Fig. 3 is a schematic view of a deformed beam according to a second preferred embodiment of the present invention.
FIG. 4 is a schematic diagram of a hexagonal micromirror structure according to a second preferred embodiment of the invention.
FIG. 5 is a schematic diagram of a honeycomb micromirror array according to a preferred embodiment of the invention.
In the figure, 1, a micromirror structure, 10/101/102/103/104/105/106, a support column, 2, a micromirror array, 20/201/202/203/204/205/206, a deformation beam, 2001, a heating resistor layer and 2002, siO 2 (first deformation layer), 2003. Polyimide (second deformation layer), 2004. Polyethylene (first deformation layer), 2005.Sicn (second deformation layer), 30. Thermal insulation layer, 31/311/312/313/314/315/316. Pivot structure/protrusion, 40. Light reflecting film.
Detailed Description
The invention provides a hexagonal micro-mirror structure, which adopts a six-section deformation beam structure capable of generating bending deformation after being electrified and heated, is used as a power mechanism for driving the deflection of a hexagonal micro-mirror (light reflecting film), and can control the displacement of the six sides of the micro-mirror in a sectionalized manner from different sides of the sides, so that the micro-mirror can deflect towards any preset direction, and the micro-mirror can be controlled to float in the vertical direction, thereby greatly meeting various requirements on the deflection (movement) direction of the micro-mirror in different application scenes. Compared with the complex deflection control structures such as the comb tooth structure in the prior art, the deflection angle adjusting device has the advantages that six deformation beam structures are arranged to adjust the deflection angle of the hexagonal micromirror, the structure is simple, and the angle control is more accurate and convenient.
Specific embodiments of the present invention will be described in further detail below with reference to the drawings accompanying the specification.
One embodiment of a hexagonal micromirror structure according to the present invention is shown in FIG. 1. The micro-mirror structure of the invention is hexagonal, comprising: the hexagonal light reflecting film 40, the six-section deformed beams 20 (201-206) and the six support columns 10 (101-106) are all the main structural components.
The light reflection film 40 serves as a mirror. The light reflecting film 40 may be suspended in a horizontal manner or at a predetermined angle over one substrate (not shown), and supported by six support columns 10 (101 to 106) provided over the substrate. In the following examples of the present invention, various embodiments of the present invention will be described in detail by taking a hexagonal light reflection film 40 horizontally suspended on a substrate as an example. However, the light reflection film 40 of the present invention is not limited to the above-described exemplary arrangement.
The substrate can be a commonly used semiconductor substrate, such as a silicon substrate, and can be manufactured to form a CMOS circuit structure such as a CMOS front-channel device and a back-channel metal interconnection layer.
The light reflection film 40 is for reflecting incident light such as laser light, and projecting the light reflected thereby in a predetermined direction onto a light receiving device arranged on a light reflection path thereof by deflection under control. Knowledge regarding the functioning of the micromirrors can be understood with reference to the existing related art.
The light reflection film 40 needs to be made of a material having a high light reflection capability. For example, the light reflection film 40 may be generally an aluminum (Al) film. In some other embodiments, the light reflecting film 40 may be a metal film such as platinum (Pt), gold (Au), or silver (Ag); alternatively, the light reflection film 40 may be a metal alloy film layer.
As shown in fig. 1, in the present embodiment, the planar shape of the light reflection film 40 is a regular hexagon. Six deformed beams 201 to 206 are provided at positions other than the outer sides of the six sides of the hexagonal light reflecting film 40, that is, the six deformed beams 201 to 206 are arranged in one-to-one correspondence with the six sides of the light reflecting film 40. And, each deformation beam 201-206 keeps a certain distance with one side of the corresponding light reflection film 40, so as to avoid direct contact with the light reflection film 40. Such an arrangement is understood to mean that the deformation beam 20 and the light reflecting film 40 are both considered to be in the same or approximately the same plane.
Wherein the six deformed beams 201 to 206 are arranged so that their front and rear ends are sequentially adjacent (not in contact with) or are grounded around the outer periphery of the light reflection film 40. And, each of the deformed beams 201 to 206 is connected to one corresponding side of the light reflecting film 40 through one of the fulcrum structures 311 to 316 (31), so that the outer periphery of the light reflecting film 40 is suspended inside the hexagonal area surrounded by the six deformed beams 201 to 206 by adopting the connection mode of the six fulcrum structures 311 to 316.
As an alternative embodiment, as shown in fig. 1, the light reflecting film 40 may be disposed to cover an upper surface of one of the heat insulating layers 30, for example, a hexagonal shape, so that the light reflecting film 40 is supported by the heat insulating layer 30. Wherein, the coverage area of the light reflection film 40 on the heat insulation layer 30 can reach the edge of the heat insulation layer 30; alternatively, the area of the light reflecting film 40 may be slightly smaller than the area of the heat insulating layer 30, so that a space is left between the side edge of the light reflecting film 40 and the side edge of the heat insulating layer 30, as shown in fig. 1.
In another alternative embodiment, the heat insulation layer 30 may also have a hexagonal frame structure, and the light reflection film 40 is embedded in the inner frame of the frame-shaped heat insulation layer 30, so that most of the upper and lower surfaces of the light reflection film 40 are exposed above and below the heat insulation layer 30, respectively.
In this form, one end of each of the fulcrum structures 311 to 316 may be connected to a side portion of a corresponding side of the thermal insulation layer 30, and the other end of the fulcrum structures 311 to 316 may be overlapped on a section of the deformed beam 201 to 206 on the same side to form a connection with the section of the deformed beam 201 to 206.
The fulcrum structures 31 (311-316) may be made of dielectric insulating material. Thus, an insulated connection is formed between each side of the light reflecting film 40 and a corresponding section of the deformed beam 201-206 by a fulcrum structure 311-316.
The insulating layer 30 may be made of dielectric insulating material, such as SiO, which is common in the art 2 SiON, etc.
As shown in FIG. 1, as a preferred embodiment, the fulcrum structures 31 (311-316) and the insulating layer 30 can be made of the same material. The heat insulating layer 30 may be arranged to have protrusions 31 (311 to 316) extending in the direction of the deformation beam 20 on the outer material thereof. In this embodiment, a protruding 311-316 structure is formed on the outer side of each side of the hexagonal thermal insulation layer 30 in a manner of extending horizontally towards the direction corresponding to a section of deformation beam 20, and the protruding 311-316 is used as a supporting point structure 311-316 to overlap the deformation beam 20, so that the insulation connection between the light reflection film 40 and the deformation beam 20 can be realized.
Further, between each of the deformed beams 201 to 206 and the corresponding side edge of the light reflecting film 40, only one protrusion 311 to 316 is provided, so that an insulating connection between each of the deformed beams 201 to 206 and one corresponding side edge of the light reflecting film 40 is formed. And, one end of each of the protruding 311-316 structures is preferably disposed at a middle position in the beam length direction of the deformed beam 201-206; meanwhile, the other end of each of the protrusions 311 to 316 is preferably disposed at a middle position of the insulating layer 30 corresponding to one of the sides, that is, at a middle position corresponding to the corresponding side of the light reflection film 40.
The structure of the protrusions 31 also serves as a hinge-like connection for the deformation beam 20 and the light reflection film 40.
As shown in fig. 2, a side view of the deformation beam 20 of fig. 1 along the length is shown. The deformation beam 20 of the present invention adopts a laminated structure of multiple film layers, and the film layers are stacked up and down to form a laminated structure. The laminated structure includes at least one heat generating resistor layer 2001, one first strain layer (2002), and one second strain layer (2003). The first deformation layer material has a first thermal expansion coefficient, the second deformation layer material has a second thermal expansion coefficient, and the relative magnitudes between the first thermal expansion coefficient and the second thermal expansion coefficient are different. For example, the first deformable layer material may be selected to have a first coefficient of thermal expansion that is greater than a second coefficient of thermal expansion of the second deformable layer material; alternatively, the first deformable layer material is selected to have a first coefficient of thermal expansion that is less than a second coefficient of thermal expansion of the second deformable layer material.
Theoretically, the greater the difference in thermal expansion coefficient between the first deformation layer material and the second deformation layer material, the more pronounced will be the bending deformation effect that it brings when combined in the deformation beam 20.
Optionally, the first deformation layer/second deformationThe layer can be made of SiO 2 Inorganic materials having a low coefficient of thermal expansion, e.g. SiN, siON or SiC, e.g. SiO 2 The thermal expansion coefficient of SiCN is 0.55E-6/DEG C, and the thermal expansion coefficient of SiCN is 2.7E-6/DEG C; the second deformation layer/first deformation layer may be made of polyimide or polyethylene or other organic materials with relatively high thermal expansion coefficients, which are typically tens to hundreds of times higher than those of the inorganic materials.
Alternatively, the first deformable layer and the second deformable layer may be SiO 2 Any two of the inorganic materials such as SiN, siON or SiC are manufactured, and only the difference between the thermal expansion coefficients of the two selected inorganic materials is obvious.
Or the first deformation layer and the second deformation layer can be made of any two of polyimide or polyethylene and other organic materials, and only the thermal expansion coefficients of the two selected organic materials have obvious difference.
The first deformation layer and/or the second deformation layer may also be a multi-layer film structure, and different materials may be used between the film layers.
Some metals also have a higher coefficient of thermal expansion, such as metallic aluminum, and the like, and thus may also be considered for use in making the first deformable layer or the second deformable layer.
The heat-generating resistor layer 2001 has a property of generating heat when energized. Alternatively, the heat-generating resistive layer 2001 may be made of at least one of high-resistance materials such as TiN, taN, and AlN.
Alternatively, the thickness of the deformation beam 20 may range between 500 angstroms and 5000 angstroms.
The bending deformation principle of the deformation beam 20 of the present invention is that, assuming that the deformation beam 20 is configured to have a structure of one heating resistor layer 2001, one first deformation layer and one second deformation layer sequentially stacked from bottom to top, when a current (applied voltage) is applied from both ends of the heating resistor layer 2001 in one section of the deformation beam 20 (201/202/203/204/205/206), the heating resistor layer 2001 will generate a heating and heating phenomenon, and transmit its heat energy into the first deformation layer and the second deformation layer. At this time, if the thermal expansion coefficient of the second deformation layer material located at the upper layer is greater than that of the first deformation layer material located at the lower layer, the second deformation layer material will undergo a larger volume expansion (mainly in the length direction of the beam 20) with respect to the first deformation layer material, and thus the deformation beam 20 is subjected to an overall bending deformation (arching) in the middle upward direction in a state where both ends of the deformation beam 20 are restrained, thereby driving the corresponding side edge of the light reflection film 40 connected to the section of deformation beam 20 to also move upward, thereby causing the light reflection film 40 to deflect upward along that side (with respect to the other side edge). Conversely, if the thermal expansion coefficient of the second deformation layer material located at the upper layer is smaller than that of the first deformation layer material located at the lower layer, the first deformation layer material will in turn undergo a larger volume expansion (mainly in the length direction of the beam 20) relative to the second deformation layer material, and thus, in a state where both ends of the deformation beam 20 are restrained, the deformation beam 20 is subjected to an overall bending deformation (collapse) in the middle downward direction, thereby driving the corresponding side edge of the light reflection film 40 connected to the section of deformation beam 20 to also move downward, so that the light reflection film 40 is deflected downward along that side (relative to the other side edge).
According to the above principle, the deflection of the light reflecting film 40 towards any preset direction can be realized, or the up-and-down floating of the light reflecting film 40 along the vertical direction can be realized, or the comprehensive technical effect of enabling the light reflecting film 40 to simultaneously generate angle deflection and up-and-down floating can be realized, so as to meet various requirements of the micro mirror deflection (movement) direction in different application scenes by performing different control combinations of respectively feeding different currents (applying different voltages) to the different sections of deformation beams 20 to form different combinations of respectively controlling the deformation magnitudes formed by the sections of deformation beams 20.
As shown in fig. 2, in an embodiment, a section of the deformation beam 20 is configured to have a structure of a heat generating resistive layer 2001, a first deformation layer (2002), and a second deformation layer (2003) sequentially stacked from bottom to top. Wherein the heat-generating resistive layer 2001 may be TiN, the firstA deformation layer may be silicon oxide (SiO) 2 ) 2002, the second deformation layer may be polyimide 2003. With this structure, when a current is applied from both ends of the TiN heat generating resistive layer 2001 in the deformation beam 20, the entire deformation beam 20 is bent and deformed to arch upward along the middle thereof.
In another embodiment, as shown in fig. 3, a section of the deformation beam 20 is configured to have a structure of a heat generating resistive layer 2001, a first deformation layer (2004), and a second deformation layer (2005) sequentially stacked from bottom to top. Wherein the heating resistor layer 2001 may be TaN, the first deformation layer may be polyethylene 2004, and the second deformation layer may be silicon carbonitride (SiCN) 2005. With this structure, when a current is applied from both ends of the TaN heat generating resistive layer 2001 in the deformation beam 20, the entire deformation beam 20 is subjected to bending deformation that falls down along the middle thereof.
As shown in fig. 1, six support columns 101 to 106 are provided between the lower side of adjacent or abutting end point positions of each two deformed beams 20 (201 and 206, 201 and 202, 202 and 203, 203 and 204, 204 and 205, 205 and 206), respectively, and the surface of the substrate. The support column 10 has a function of supporting the light reflection film 40 and suspending the light reflection film 40 above the substrate, and also has a function of forming electrical connection between each of the deformed beams 201 to 206 and the substrate.
In one embodiment, the support column 10 may have a circular cross-sectional profile, as shown in FIG. 1.
In other embodiments, the support column 10 may also have a cross-sectional profile of rectangular or the like.
In one embodiment, the support post 10 may use tungsten (W) as a conductive carrier for electrically connecting the deformation beam 20 to the substrate circuit. Further, besides tungsten metal, siO may be used 2 At least one of SiN, siON and SiC material, encapsulating metallic tungsten, forms a conductive support pillar 10 structure having multiple layers of material in the vertical direction.
In an embodiment, each of the two deformed beams 20 is supported by being disposed on the top surface of the support column 10 in an adjacent manner, and the heat-generating resistive layers 2001 in the two deformed beams 20 are respectively connected with two discrete metal tungsten electrodes in the support column 10, so as to realize independent connection with the CMOS circuit in the substrate. Any one of the deformed beams 20 can be individually energized and controlled by a CMOS circuit provided in the substrate.
In another embodiment, one end of each two deformed beams 20 is connected with the second deformed layer by the first deformed layer and the second deformed layer, and the two deformed beams are commonly placed on the top surface of the support column 10 to be supported, but a certain distance is kept between the heating resistor layers 2001 in the two deformed beams 20, and the heating resistor layers are still respectively led out from the respective end, and are respectively connected with two discrete metal tungsten electrodes in the support column 10 to realize independent connection with the CMOS circuit in the substrate. In this arrangement, although the two deformed beams 20 are connected at one end portion thereof by the first deformed layer and the second deformed layer, the deformed beam 20 has a long and thin structure, and therefore has a good heat insulation effect between the two deformed beams 20 without substantially affecting the bending effect of the two deformed beams. Instead, the overall stability of the micromirror structure is improved.
As shown in fig. 1, when the micromirror is required to operate, only one of the deformed beams (e.g. 201) is electrified, while the other five deformed beams (202-206) are not electrified; energizing the multi-segment deformed beam 20, i.e., energizing two to six of the six-segment deformed beams 201 to 206, may also be performed. The following description will be given by taking the configuration of the deformation beam 20 as an example in the manner of fig. 2.
For example, the electric current may be applied to only one of the deformed beams 203 positioned on the upper right side, and the electric current may not be applied to all of the five deformed beams 201 to 202 and 204 to 206 positioned on the other five sides. In this state, the deformed beam 203 located on the upper right side is deformed to arch upward, so that the upper right side of the hexagonal light reflecting film 40 connected to the deformed beam 203 via the supporting point structure 313 is also moved upward, and the light reflecting film 40 is deflected upward with respect to the whole of the lower left side (the side corresponding to the deformed beam 206), that is, the whole micromirror is inclined and deflected from the upper right side to the lower left side.
In the above process, it is also possible to increase the simultaneous application of smaller voltages (applied voltages with respect to the upper-right one of the deformation beams 203) to the four deformation beams 202, 204, 201, 205 illustrated at the upper, lower-right, upper-left, and lower sides to cancel the drag caused by the corresponding sides of the light reflection film 40 by the four deformation beams 202, 204, 201, 205 at the upper, lower-right, upper-left, and lower sides when the light reflection film 40 is deflected, and thus to facilitate the reduction of the maximum voltage applied to the upper-right one of the deformation beams 203.
For another example, the same voltage may be applied to the two deformed beams 203 and 204 illustrated on the upper right and lower right sides at the same time, and the electric heating may be performed, while no voltage (or a relatively small voltage) is applied to the other two deformed beams 202 and 205 illustrated on the upper and lower sides. In this state, the two deformed beams 203, 204 located on the upper right side and the lower right side will be deformed by the same amount to arch upward together, and the light reflecting film 40 will be deflected upward with respect to the entirety of the left end vertex thereof, that is, the entire micromirror assumes a state of tilting upward from right to left.
If voltages of different magnitudes are applied to the two deformed beams 203, 204 located on the upper right side and the lower right side, and no voltage (or a relatively small voltage is applied correspondingly) is applied to the four deformed beams 201 to 202, 205 to 206 located on the other sides, the light reflecting film 40 will also form more various overall oblique deflection patterns with respect to the left end apexes thereof.
For example, the six-stage deformed beams 201 to 206 shown in the figure may be simultaneously applied with the same voltage and heated by energization. In this state, the light reflection film 40 will float upward as a whole. Alternatively, a predetermined voltage may be applied to the six-stage deformed beams 201 to 206 in advance, and the voltage may be increased or decreased in accordance with the applied voltage, so that the light reflection film 40 can float upward or downward as a whole. By the light reflection film 40 floating upward or downward as a whole, the optical path between the light reflection film 40 and the light emitter or the light receiver can be slightly changed.
By combining the above-described modes, it is possible to deflect the light reflection film 40 and to float up and down.
The micromirror structure 1 in fig. 1 is suitable for occasions with low requirements on duty cycle, and can effectively reduce the overall height of the device.
A method for fabricating a micromirror structure according to the present invention will be described in detail with reference to the following embodiments and fig. 1.
The method for manufacturing the micro-mirror structure of the present invention can be used for manufacturing the hexagonal micro-mirror structure 1 shown in fig. 1, for example, and can include the following steps:
a substrate is provided, and first, a CMOS circuit can be formed on the substrate according to a conventional process.
Then, a sacrificial layer is deposited on the surface of the substrate, and patterned and planarized according to design requirements.
The sacrificial layer may be made of a material having a high etching selectivity with respect to the substrate, the medium (heat insulating layer, deformation layer material), the deformation beam 20, and the metal (light reflecting film).
Then, six through holes communicated with the CMOS circuit can be formed on the sacrificial layer by adopting photoetching and etching processes, and the connecting wires of the six through holes are enclosed into a regular hexagonal area. Then, sequentially depositing a dielectric material and a conductive metal, such as SiO, on the surface of the sacrificial layer 2 And tungsten, and filling the via holes.
Thereafter, the excessive SiO on the surface of the sacrificial layer can be removed by a Chemical Mechanical Polishing (CMP) process 2 And tungsten, and two independent tungsten electrodes are formed in each through hole, and the lower ends of the two tungsten electrodes are respectively connected with the CMOS circuit on the substrate. Thus, the conductive support post 10 structures are formed in the six through holes of the sacrificial layer, respectively.
Next, a heating resistor layer 2001, a first strain layer, and a second strain layer are sequentially deposited on the surface of the sacrificial layer, and patterned to form six-stage strain beams 201 to 206 having a stacked structure. When the six sections of deformed beams 201 to 206 are patterned, the six sections of deformed beams 201 to 206 can be formed into a hexagonal arrangement in a head-to-tail sequential adjacent mode or the six sections of deformed beams 201 to 206 can be formed into a hexagonal arrangement in a head-to-tail sequential connected mode according to requirements. Meanwhile, the heating resistor layer 2001 in the deformed beam 20 is respectively connected with one tungsten electrode in the lower conductive support column 10 at the junction of the end parts of the adjacent two deformed beams 20.
Wherein the deformation beam 20 may be formed in the manner of fig. 2, i.e. with a material having a relatively small coefficient of thermal expansion for the first deformation layer and a material having a relatively large coefficient of thermal expansion for the second deformation layer. For example, the heat-generating resistive layer 2001 may be TiN, and the first deformable layer may be SiO 2 2002, the second deformation layer may be polyimide 2003, so that the deformation beam 20 has an upward arching effect when energized and heated. Alternatively, the deformation beam 20 may be formed in the manner shown in FIG. 3, with a material having a relatively large coefficient of thermal expansion for the first deformation layer and a material having a relatively small coefficient of thermal expansion for the second deformation layer. For example, taN may be used for the heat-generating resistive layer 2001, polyethylene 2004 may be used for the first deformation layer, and SiCN2005 may be used for the second deformation layer, so that the deformation beam 20 has a downward-falling effect when energized and heated.
The six deformed beams 201 to 206 finally formed are positioned above the connecting lines between the structures of the six conductive support columns 101 to 106 and supported by the six conductive support columns 101 to 106.
Next, a dielectric insulating layer 30 material is deposited on the surface of the sacrificial layer, and patterned, a hexagonal insulating layer 30 pattern is correspondingly formed on the surface of the sacrificial layer within the hexagonal area surrounded by the six deformed beams 201 to 206, and at the same time, a part of the insulating layer 30 material is respectively reserved between the outer sides of the six sides of the formed insulating layer 30 pattern and the deformed beams 201 to 206 on the corresponding sides, so that a protrusion 311 to 316 overlapped to the middle position of the deformed beams 201 to 206 is formed between each side of the insulating layer 30 and the deformed beams 201 to 206 on the corresponding sides as fulcrum structures 311 to 316.
Next, a light reflecting film 40 material, such as aluminum, may be deposited on the insulating layer 30, the sacrificial layer, and the deformation beam 20, and then, the excess light reflecting film 40 material deposited on the sacrificial layer and the deformation beam 20 is removed by patterning, and only one hexagonal light reflecting film 40 pattern remains on the area within the hexagonal pattern of the insulating layer 30, so that the formed light reflecting film 40 is electrically insulated from the deformation beam 20.
A protective layer may be formed on the surface of the light reflection film 40 for protection.
Finally, the sacrificial layer is removed by a release process to form the hexagonal micromirror structure 1 suspended above the substrate as shown in fig. 1.
If the light reflection film structure embedded in the frame-shaped heat insulation layer is required to be formed, a hexagonal frame-shaped first heat insulation layer pattern (comprising six pivot structures) is formed on the surface of the sacrificial layer within a hexagonal area surrounded by six deformed beams 201-206 in the process of manufacturing the heat insulation layer through patterning, and a protective layer is deposited on the surface of the sacrificial layer within the hexagonal frame of the first heat insulation layer pattern, so that the surface of the protective layer is level with the surface of the first heat insulation layer. Then, a light reflection film pattern is formed on the surfaces of the protective layer and the first heat insulating layer, and the boundary of the light reflection film pattern is located between the boundary of the protective layer and the first heat insulating layer. Then, a second insulating layer is deposited on the surfaces of the light reflection film pattern and the first insulating layer, and a second insulating layer pattern (including six second fulcrum structures corresponding to six fulcrum structures on the first insulating layer pattern) of a hexagonal frame shape corresponding to the first insulating layer pattern is formed by patterning, thereby restricting the boundary of the light reflection film in the hexagonal frame of the upper and lower insulating layers.
As shown in fig. 4, another embodiment of the micromirror structure of the present invention is shown. The difference from the micromirror structure 1 in fig. 1 is that in the present embodiment, six deformed beams 201 to 206 are arranged to surround the lower side of the light reflection film 40. In this configuration, the six fulcrum structures 311-316 (31) will extend in a downward direction toward the six deformed beams 201-206 and connect to and lie over the six deformed beams 201-206. The fulcrum structures 311 to 316 simultaneously function to support the light reflection film 40. The micromirror structure 1 has the advantages that the light reflection film 40 can completely cover the lower heat insulation layer 30, the deformation beam 20 and the support column 10 within the boundary in the vertical direction, so that the light reflection film 40 can occupy the largest area in the horizontal direction, namely the largest duty ratio is obtained, thereby realizing the relative reduction of the total area of the device, effectively improving the area utilization ratio, and avoiding the direct irradiation of light rays from above to the deformation beam 20. Other aspects of the micromirror structure 1 of the present embodiment, including controlling the deflection of the micromirrors, are similar to the micromirror structure 1 of fig. 1, and those skilled in the art will understand that they will not be repeated.
In the process of manufacturing the micromirror structure 1 of fig. 4, after the deformation beam 20 is formed, a new sacrificial layer (second sacrificial layer) is deposited on the lower sacrificial layer (first sacrificial layer) and the deformation beam 20, six through holes corresponding to the six sections of deformation beams 201-206 are formed on the new sacrificial layer through photolithography and etching processes, the heat insulation layer 30 material is deposited on the new sacrificial layer and in the through holes, six supporting point structures 311-316 (31) are formed on the deformation beam 20, the heat insulation layer 30 pattern is formed on the supporting point structures 311-316, and the light reflection film 40 is further formed on the heat insulation layer 30 pattern. Finally, all sacrificial layer materials are removed through a release process, so that the hexagonal micro-mirror structure 1 suspended above the substrate as shown in fig. 4 is formed.
With the hexagonal micromirror structures 1 in fig. 1 and 4 described above, a honeycomb-shaped micromirror array 2 having hexagonal light reflecting films 40 (micromirrors) can be formed by arranging a plurality of micromirror structures 1 in order side by side on a substrate, as shown in fig. 5. Also, any one of the micromirror structures 1 in the micromirror array 2 is configured to perform deflection toward any predetermined direction or/and floating up and down independently of the other micromirror structures.
The above described micromirror structure 1 or micromirror array 2 can also be used to make a detector. The knowledge about the application of the aspect of the detector formed by the micromirror can be understood with reference to the prior art.
In summary, the bending deformation degree of the six deformation beams is controlled, so that the hexagonal micro-mirrors (light reflection films) can be conveniently driven to deflect, the micro-mirrors can deflect towards any preset direction, and the whole micro-mirrors can be controlled to float in the vertical direction, thereby greatly meeting various requirements on the deflection directions of the micro-mirrors in different application scenes. Meanwhile, the six deformation beam structures are arranged to adjust the deflection angle of the hexagonal micro mirror, so that the structure is simple, and the angle control is more accurate and convenient.
While the invention has been described with respect to the preferred embodiments, it is not intended to limit the invention thereto, and any person skilled in the art may make variations and modifications without departing from the spirit of the invention, and therefore the scope of the invention is to be determined by the appended claims.
Claims (2)
1. A manufacturing method of a micro-mirror structure comprises the following steps:
a hexagonal light reflecting film configured to be suspended over a substrate;
six sections of deformation beams are configured to be adjacently arranged end to end or are grounded around the outside of the light reflection film or around the position below the light reflection film in sequence, each section of deformation beam is arranged in one-to-one correspondence with one side of the light reflection film, and each section of deformation beam is respectively connected to the outside of the corresponding side of the light reflection film in an insulating manner through a fulcrum structure;
six support columns configured to be separated and supported between the lower part of the adjacent or connected end point positions of each two sections of the deformation beams and the surface of the substrate, and to form electrical connection between each section of the deformation beams and the substrate;
the deformation beam is electrified to generate bending deformation in an upward or downward direction relative to the length direction of the deformation beam due to the electrified heating, the corresponding side of the light reflection film connected with the deformation beam is driven to displace upward or downward, and the deflection or/and the upward and downward floating of the light reflection film towards any preset direction are realized by respectively controlling different combinations of the formed deformation sizes of the deformation beams;
the deformation beam comprises a heating resistor layer, a first deformation layer and a second deformation layer, wherein the heating resistor layer is connected with the support column, so that any section of deformation beam is independently electrified and controlled through the substrate, when current is introduced from two ends of the heating resistor layer in one section of deformation beam, the heating resistor layer generates heating and heating phenomena, and heat energy of the heating resistor layer is conducted to the first deformation layer and the second deformation layer, at the moment, the second deformation layer material generates larger volume expansion relative to the first deformation layer material, or the first deformation layer material generates larger volume expansion relative to the second deformation layer material, so that the deformation beam generates bending deformation relative to the length direction of the deformation beam in a state that two ends of the deformation beam are restrained;
the method is characterized by comprising the following steps of:
providing a substrate, and forming a CMOS circuit on the substrate;
forming a sacrificial layer on the surface of the substrate and patterning;
forming six through holes communicated with the CMOS circuit on the sacrificial layer, and filling metal in the through holes to form six conductive support column structures;
sequentially forming a heating resistor layer, a first deformation layer and a second deformation layer on the surface of the sacrificial layer, and patterning to form six sections of deformation beams with stacked structures, wherein each section of deformation beams is formed into a hexagonal arrangement in a head-to-tail sequential adjacent or joint mode, and adjacent or joint endpoints of every two sections of deformation beams are in contact with one corresponding conductive support column;
forming a dielectric heat insulation layer on the surface of the sacrificial layer, patterning, forming a hexagonal heat insulation layer pattern on the surface of the sacrificial layer within a hexagonal area surrounded by each section of the deformation beam, and enabling the outer side of each side of the formed heat insulation layer pattern to be provided with a protrusion lapped to the middle part of a corresponding section of the deformation beam as a fulcrum structure;
forming a hexagonal light reflection film pattern on the surface of the insulating layer pattern;
and removing the sacrificial layer through a release process to form a suspended hexagonal micro-mirror structure.
2. The method of claim 1, wherein the first deformable layer material has a first coefficient of thermal expansion and the second deformable layer material has a second coefficient of thermal expansion, the first coefficient of thermal expansion and the second coefficient of thermal expansion being different in relative magnitude.
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| CN109991730A (en) * | 2019-03-12 | 2019-07-09 | 上海集成电路研发中心有限公司 | A kind of micro-mirror structure |
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| CN109991730A (en) * | 2019-03-12 | 2019-07-09 | 上海集成电路研发中心有限公司 | A kind of micro-mirror structure |
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