CN112304460B - Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching - Google Patents

Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching Download PDF

Info

Publication number
CN112304460B
CN112304460B CN202011124547.4A CN202011124547A CN112304460B CN 112304460 B CN112304460 B CN 112304460B CN 202011124547 A CN202011124547 A CN 202011124547A CN 112304460 B CN112304460 B CN 112304460B
Authority
CN
China
Prior art keywords
mos tube
resistor
voltage
control pin
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011124547.4A
Other languages
Chinese (zh)
Other versions
CN112304460A (en
Inventor
刘智峰
王泽强
周永刚
何玉松
赵春德
宋元恺
任振飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Yiai Technology Co ltd
Original Assignee
Qingdao Yiai Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Yiai Technology Co ltd filed Critical Qingdao Yiai Technology Co ltd
Priority to CN202011124547.4A priority Critical patent/CN112304460B/en
Publication of CN112304460A publication Critical patent/CN112304460A/en
Application granted granted Critical
Publication of CN112304460B publication Critical patent/CN112304460B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G01R19/2503Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques for measuring voltage only, e.g. digital volt meters (DVM's)
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/371Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] with remote indication, e.g. on external chargers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/385Arrangements for measuring battery or accumulator variables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H01M10/486Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte for measuring temperature
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2215/00Details concerning sensor power supply
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Abstract

The invention discloses a single-path AD sampling circuit, a system and a method based on double MOS tube conduction switching, which comprises the following steps: the device comprises a first MOS tube, a second MOS tube, a first resistor, a second resistor and a singlechip; the first MOS tube and the second MOS tube are respectively connected with a first resistor and a second resistor; the singlechip comprises an AD pin, and a first control pin and a second control pin which respectively control the conduction of the first MOS tube and the second MOS tube; the AD pin is connected with a parallel node formed by connecting the first resistor and the second resistor in parallel and used for measuring the voltage value of conduction switching of the first MOS tube and the second MOS tube. The collection of lithium battery voltage and temperature sensor resistance is completed by adopting single-path AD sampling, and the electric quantity of the lithium battery is saved while the parameter accuracy is ensured.

Description

Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching
Technical Field
The invention relates to the technical field of ambient temperature acquisition, in particular to a single-path AD sampling circuit, a system and a method based on double MOS tube conduction switching.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
In the field of environmental temperature acquisition, a plurality of environmental temperature monitoring points are in high-voltage, strong magnetic field and severe outdoor environment, and the traditional temperature measurement method cannot be used due to the problems of strong electromagnetic noise, high-voltage insulation, space limitation and the like; in addition, because the temperature monitoring nodes are more and are widely distributed, and the cost can be increased by field wiring, the lithium battery is basically adopted for power supply at present, the temperature measurement system is required to detect the electric quantity of the lithium battery besides detecting the temperature in real time, an alarm can be given in time when the electric quantity is insufficient, the electric quantity of the lithium battery is also saved by the temperature measurement system per se, and the power supply time of the battery is prolonged as far as possible.
Disclosure of Invention
In order to solve the problems, the invention provides a single-path AD sampling circuit, a single-path AD sampling system and a single-path AD sampling method based on double-MOS tube conduction switching.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a single-channel AD sampling circuit based on dual MOS transistor conduction switching, including: the device comprises a first MOS tube, a second MOS tube, a first resistor, a second resistor and a singlechip;
the first MOS tube and the second MOS tube are respectively connected with a first resistor and a second resistor; the singlechip comprises an AD pin, and a first control pin and a second control pin which respectively control the conduction of the first MOS tube and the second MOS tube; the AD pin is connected to a parallel node formed by connecting the first resistor and the second resistor in parallel and used for measuring the voltage value of conduction switching of the first MOS tube and the second MOS tube.
In a second aspect, the invention provides a sampling system of a single-channel AD sampling circuit based on dual MOS transistor conduction switching, including the sampling circuit of the first aspect, wherein one end of the first MOS transistor is connected to a measured battery, a parallel node of the first resistor and the second resistor connected in parallel is connected to a measured temperature sensor, and a voltage of the measured battery and a resistance of the measured temperature sensor are obtained according to a voltage value of the first MOS transistor and the second MOS transistor conduction switching measured by an AD pin.
In a third aspect, the present invention provides a sampling method for a single-channel AD sampling circuit based on dual MOS transistor conduction switching, including:
the first MOS tube is controlled to be conducted through the first control pin, the second MOS tube is controlled to be disconnected through the second control pin, a first loop is formed by the tested battery, the first MOS tube, the first resistor and the tested temperature sensor, and the AD pin acquires the voltage of the first loop;
the second MOS tube is controlled to be conducted through a second control pin, a second loop is formed by the tested battery, the first MOS tube, the first resistor, the second resistor and the tested resistor, and the AD pin acquires the voltage of the second loop;
and obtaining the voltage of the battery to be measured and the resistance of the temperature sensor to be measured according to the first loop voltage and the second loop voltage.
Compared with the prior art, the invention has the following beneficial effects:
the sampling circuit provided by the invention obtains the battery voltage and the sensor resistance value through the single-path AD sampling interface, and the method for starting and closing the sampling circuit at certain time intervals in a circulating manner saves the battery power and improves the reliability and the durability of the system while ensuring the detection accuracy of the sensor temperature and the battery power parameter.
Advantages of additional aspects of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are included to illustrate an exemplary embodiment of the invention and not to limit the invention.
Fig. 1 is a schematic diagram of a single-channel AD sampling circuit based on conduction switching of a dual MOS transistor according to embodiment 1 of the present invention.
The specific implementation mode is as follows:
the invention is further explained by the following embodiments in conjunction with the drawings.
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, and it should be understood that the terms "comprises" and "comprising", and any variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiments and features of the embodiments of the present invention may be combined with each other without conflict.
Example 1
As shown in fig. 1, the present embodiment provides a single-channel AD sampling circuit based on dual MOS transistor conduction switching, including: the device comprises a first MOS tube, a second MOS tube, a first resistor, a second resistor and a singlechip;
the first MOS tube and the second MOS tube are respectively connected with a first resistor and a second resistor; the singlechip comprises an AD pin, and a first control pin and a second control pin which respectively control the conduction of the first MOS tube and the second MOS tube; the AD pin is connected with a parallel node formed by connecting the first resistor and the second resistor in parallel and used for measuring the voltage value of conduction switching of the first MOS tube and the second MOS tube.
The embodiment can be used in the field of environmental sensor parameter acquisition, and particularly relates to acquisition of temperature sensor resistance and power supply battery voltage; because the temperature sampling node is more, adopt lithium cell power supply moreover mostly, except to temperature real-time detection, still detect the lithium cell electric quantity, so, this embodiment still provides one kind and realizes battery voltage and ambient temperature synchronous measurement's single-circuit AD sampling circuit through two MOS pipe switchings.
Specifically, in the single-channel AD sampling circuit, one end of a first MOS transistor is connected to the measured battery, a parallel node where the first resistor and the second resistor are connected in parallel is connected to the measured temperature sensor, and the voltage of the measured battery and the resistance of the measured temperature sensor are obtained according to a voltage value of conduction switching of the first MOS transistor and the second MOS transistor measured by an AD pin.
As shown in fig. 1, VCC represents the voltage of a lithium battery to be measured, RT represents an NTC temperature sensor, and VAD represents the voltage after conduction switching of a double MOS tube, which is measured through an AD pin of a single chip microcomputer;
r1 and R2 are two parallel resistors, the parallel resistance value of R1 and R2 is changed through the conduction switching of the double MOS tubes, so that the voltage value of VAD is changed, and the conduction switching Control of the double MOS tubes is realized by a POWER _ Control pin and an IO _ Control pin of the single chip microcomputer;
the POWER _ Control pin controls the on-off of the MOS tube Q1 by outputting high and low levels, so that the starting function of the whole sampling circuit is realized, and when the electric quantity and the temperature of the battery do not need to be measured, the MOS tube Q1 can be controlled to be closed, the POWER of a rear-stage circuit is cut off, and the purpose of saving the electric quantity is achieved;
the IO _ Control pin controls the on/off of the MOS transistor Q2 by outputting high/low levels, so that the switching of the resistor R2 in the circuit is realized, and the parallel resistance of R1 and R2 is changed;
and finally, the voltage of the VCC lithium battery and the resistance of the NTC temperature sensor, namely VCC and RT, are obtained through the VAD voltage value, and the temperature value of the NTC temperature sensor can be converted through the resistance value of the RT.
In more embodiments, a sampling method of a single-channel AD sampling circuit based on dual MOS transistor conduction switching specifically includes:
(1) Outputting a low level by a POWER _ Control pin, controlling the conduction of an MOS tube Q1, and starting a post-stage measuring circuit;
(2) An IO _ Control pin outputs high level to Control an MOS tube Q2 to be switched off, a first loop is formed by VCC, Q1, R1 and RT, VAD value measured by a single chip microcomputer is VAD1, and VAD1 is a voltage dividing value of R1 and RT to VCC;
according to ohm's law:
Figure BDA0002733159730000051
(3) An IO _ Control pin outputs low level to Control the conduction of an MOS tube Q2, a second loop is formed by VCC, Q1, R2 and RT, and R1 and R2 are connected in parallel; VAD value measured by the singlechip is VAD2, and VAD2 is the partial pressure value of R1// R2 and RT to VCC;
according to ohm's law:
Figure BDA0002733159730000052
(4) In this embodiment, R1=10K Ω, R2=330 Ω, VAD1 and VAD2 are determined by the AD pin of the single chip, and the solution equation set finally determines the values of VCC and RT, that is:
Figure BDA0002733159730000053
Figure BDA0002733159730000061
(5) After values of VCC and RT are obtained, the POWER _ Control pin is controlled to output high level, a post-stage measuring circuit is closed, the electric quantity of a battery is saved, and the next measuring period is waited;
in this embodiment, the loop Control POWER _ Control pin outputs a low level every one hour, the measurement circuit is started, and in a very short time (ms level), after the single chip executes the above steps and sampling is completed, the POWER _ Control pin is controlled to output a high level to close the measurement circuit.
Through the sampling calculation process, the acquisition of VCC lithium battery voltage and NTC temperature sensor resistance is completed by using one-way AD sampling interface in the embodiment, the electric quantity of the lithium battery is saved while the parameter accuracy is ensured, and the system reliability is improved.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive efforts by those skilled in the art based on the technical solution of the present invention.

Claims (9)

1. A sampling method of a single-way AD sampling circuit based on double-MOS tube conduction switching is characterized in that the single-way AD sampling circuit based on double-MOS tube conduction switching comprises the following steps: the device comprises a first MOS tube, a second MOS tube, a first resistor, a second resistor and a singlechip;
the first MOS tube and the second MOS tube are respectively connected with a first resistor and a second resistor; the singlechip comprises an AD pin, and a first control pin and a second control pin which respectively control the conduction of the first MOS tube and the second MOS tube; the AD pin is connected to a parallel node formed by connecting a first resistor and a second resistor in parallel and used for measuring the voltage value of conduction switching of the first MOS tube and the second MOS tube;
the first MOS tube is controlled to be conducted through the first control pin, the second MOS tube is controlled to be disconnected through the second control pin, a first loop is formed by the battery to be tested, the first MOS tube, the first resistor and the temperature sensor to be tested, and the AD pin acquires the voltage of the first loop;
the second MOS tube is controlled to be conducted through a second control pin, a second loop is formed by the tested battery, the first MOS tube, the first resistor, the second resistor and the tested resistor, and the AD pin acquires the voltage of the second loop;
and obtaining the voltage of the battery to be measured and the resistance of the temperature sensor to be measured according to the first loop voltage and the second loop voltage.
2. A sampling system of a single-circuit AD sampling circuit based on double-MOS tube conduction switching is characterized by comprising the single-circuit AD sampling circuit of claim 1, wherein one end of the first MOS tube is connected with a tested battery, a parallel node formed by connecting the first resistor and the second resistor in parallel is connected with a tested temperature sensor, and the voltage of the tested battery and the resistance of the tested temperature sensor are obtained according to the voltage value of the first MOS tube and the second MOS tube conduction switching measured by an AD pin.
3. The sampling method of the single-channel AD sampling circuit based on the conduction switching of the double MOS tubes as claimed in claim 1, wherein the first control pin and the second control pin control the turn-off and turn-on of the first MOS tube and the second MOS tube by outputting a high level and a low level.
4. The sampling method of the single-channel AD sampling circuit based on the conduction switching of the double MOS tubes as claimed in claim 1, wherein the first MOS tube and the second MOS tube are controlled to be turned on and off by the first control pin and the second control pin, and the parallel resistance value of the first resistor and the second resistor is changed, so as to change the voltage value obtained by the AD pin.
5. The sampling method of the single-channel AD sampling circuit based on the conduction switching of the dual MOS transistors as claimed in claim 1, wherein the first loop voltage VAD1 is:
Figure FDA0003947837120000021
wherein VCC is the battery voltage; r1 is a first resistor; RT is the resistance of the measured temperature sensor.
6. The sampling method of the one-way AD sampling circuit based on the conduction switching of the double MOS tubes as claimed in claim 1, wherein the second loop voltage VAD2 is:
Figure FDA0003947837120000022
wherein VCC is the battery voltage; r1 is a first resistor; r2 is a second resistor; RT is the resistance of the measured temperature sensor.
7. The sampling method of the single-circuit AD sampling circuit based on the conduction switching of the double MOS tubes as claimed in claim 1, wherein the voltage VCC of the battery to be tested and the resistance RT of the temperature sensor to be tested are obtained according to the first loop voltage VAD1 and the second loop voltage VAD2 as follows:
Figure FDA0003947837120000023
Figure FDA0003947837120000024
wherein, R1 is a first resistor; and R2 is a second resistor.
8. The sampling method of the single-channel AD sampling circuit based on the conduction switching of the double MOS tubes as claimed in claim 1, wherein after the voltage of the battery to be tested and the resistance of the temperature sensor to be tested are obtained, the first control pin is controlled to output high level, and the post-stage sampling circuit is closed.
9. The sampling method of the one-way AD sampling circuit based on the conduction switching of the double MOS tubes as claimed in claim 1, wherein the first Control pin is a POWER _ Control pin of the single chip microcomputer, and the second Control pin is an IO _ Control pin of the single chip microcomputer.
CN202011124547.4A 2020-10-20 2020-10-20 Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching Active CN112304460B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011124547.4A CN112304460B (en) 2020-10-20 2020-10-20 Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011124547.4A CN112304460B (en) 2020-10-20 2020-10-20 Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching

Publications (2)

Publication Number Publication Date
CN112304460A CN112304460A (en) 2021-02-02
CN112304460B true CN112304460B (en) 2023-01-24

Family

ID=74327993

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011124547.4A Active CN112304460B (en) 2020-10-20 2020-10-20 Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching

Country Status (1)

Country Link
CN (1) CN112304460B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1630130A (en) * 2003-12-17 2005-06-22 三洋电机株式会社 Battery pack
CN104062025A (en) * 2014-07-09 2014-09-24 成都千嘉科技有限公司 Energy-saving automatic AD temperature collecting monitoring system
WO2015165147A1 (en) * 2014-04-29 2015-11-05 江苏华东锂电技术研究院有限公司 Lithium battery pack temperature and voltage monitoring system
CN105676145A (en) * 2016-04-01 2016-06-15 福建联迪商用设备有限公司 Method and device for detecting temperature and ID of battery

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092863A (en) * 1977-01-12 1978-06-06 Johnson & Johnson Electronic thermometer circuit
JP2008096327A (en) * 2006-10-13 2008-04-24 Mitsubishi Materials Corp Temperature sensor circuit
US8373408B2 (en) * 2011-02-22 2013-02-12 Sendyne Corporation High precision algorithmically assisted voltage divider with fault detection
CN104655310A (en) * 2013-11-25 2015-05-27 联合汽车电子有限公司 Temperature detection circuit and implementation method thereof
CN207752123U (en) * 2017-12-28 2018-08-21 杭州士腾科技有限公司 Single line detects the circuit of double cell series voltage
CN108254099A (en) * 2017-12-29 2018-07-06 惠州市德赛西威汽车电子股份有限公司 A kind of temperature sensing circuit of thermistor
CN209878171U (en) * 2019-06-27 2019-12-31 浙江绍兴苏泊尔生活电器有限公司 Temperature measurement circuit and household appliance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1630130A (en) * 2003-12-17 2005-06-22 三洋电机株式会社 Battery pack
WO2015165147A1 (en) * 2014-04-29 2015-11-05 江苏华东锂电技术研究院有限公司 Lithium battery pack temperature and voltage monitoring system
CN104062025A (en) * 2014-07-09 2014-09-24 成都千嘉科技有限公司 Energy-saving automatic AD temperature collecting monitoring system
CN105676145A (en) * 2016-04-01 2016-06-15 福建联迪商用设备有限公司 Method and device for detecting temperature and ID of battery

Also Published As

Publication number Publication date
CN112304460A (en) 2021-02-02

Similar Documents

Publication Publication Date Title
CN104535214B (en) A kind of high precision temperature acquisition circuit and method based on NTC temperature sensors
CN206847815U (en) It is segmented temperature measuring equipment and cooking appliance
CN201314846Y (en) Temperature inspecting instrument
CN106840442A (en) A kind of battery temperature measuring system and method
CN113375822A (en) Temperature detection system and temperature detection method for lithium battery pack
CN209541943U (en) Temperature sampling circuit
CN101476913A (en) Wireless stem flow sensor and its control method
CN112304460B (en) Single-path AD sampling circuit, system and method based on double-MOS tube conduction switching
CN205881107U (en) Dewfall alarm
CN108513275B (en) Zigbee wireless sensing node capable of being connected with field indicating instrument
JP2019097954A (en) Drying prediction system and drying prediction program
CN103293370B (en) Voltage-temperature integrated testing device of storage battery set
CN206610141U (en) A kind of public lavatory automatic sanitation control device based on radio network technique
CN203795195U (en) Intelligent domestic clothes airing rod
CN104678854A (en) Remote controller, temperature sampling control system and temperature sampling control method
CN214409633U (en) Function realization circuit of multi-parameter water meter
CN104121215A (en) Intelligent exhaust fan
CN209783000U (en) Control system of space energy heat pump water heater
CN204556709U (en) A kind of proving installation of nitrogen oxide sensor chip pumps electric current
CN110138337B (en) Photovoltaic cell health assessment online detection circuit and detection method for WSN node
CN208384442U (en) Temperature sensing circuit and temperature-detecting device
CN112556567A (en) Low-power consumption expansion joint deformation monitoring wireless node and control method thereof
CN204575214U (en) A kind of maximum temperature sample circuit
CN205483302U (en) Low -power consumption temperature sensing system
CN212567717U (en) Intelligent temperature sensor device with RS485 output

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20211116

Address after: 266555 No. 98, Xiangjiang Road, Qingdao Economic and Technological Development Zone, Shandong Province

Applicant after: Qingdao Yiai Technology Co.,Ltd.

Address before: 266555 No. 98, Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province

Applicant before: QINGDAO EI COMMUNICATION EQUIPMENT Co.,Ltd.

GR01 Patent grant
GR01 Patent grant