CN112290793A - Pulse sequence control DC-DC conversion device suitable for micro-grid - Google Patents

Pulse sequence control DC-DC conversion device suitable for micro-grid Download PDF

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Publication number
CN112290793A
CN112290793A CN202011125254.8A CN202011125254A CN112290793A CN 112290793 A CN112290793 A CN 112290793A CN 202011125254 A CN202011125254 A CN 202011125254A CN 112290793 A CN112290793 A CN 112290793A
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China
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operational amplifier
resistor
output
module
input end
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Chinese (zh)
Inventor
于东升
李威
李兆琨
胡义华
叶宗彬
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State Grid Brazil Holding Co
China University of Mining and Technology CUMT
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State Grid Brazil Holding Co
China University of Mining and Technology CUMT
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Priority to CN202011125254.8A priority Critical patent/CN112290793A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J1/00—Circuit arrangements for dc mains or dc distribution networks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The application relates to a pulse sequence control DC-DC conversion device suitable for a micro-grid. The device comprises: the device comprises a conversion module, an output voltage sampling module, a pulse generation module and a driving module. The output voltage of the DC-DC conversion device is controlled, so that the circuit of the DC-DC conversion device is simple, a compensation network and the like are not needed, the power consumption and the circuit realization area are greatly reduced, and the circuit cost is reduced.

Description

Pulse sequence control DC-DC conversion device suitable for micro-grid
Technical Field
The application relates to the technical field of direct-current micro-grids, in particular to a pulse sequence control DC-DC conversion device suitable for a micro-grid.
Background
In the power generation technology, new energy is more and more popular for power generation, and the new energy power generation has been greatly popularized in China because of the advantages of less environmental pollution, high utilization rate, more flexibility in distributed installation, full combination of geographic advantages and the like. When the large alternating-current power grid is used, a method for directly scheduling electric energy generated by the distributed power supply is unavailable, the electric energy can also have adverse effects on the tidal current, the safety, the electric energy quality and the like of the large alternating-current power grid, and the defects directly bring difficulties for regulating and controlling the tidal current. For the reasons, the concept of the microgrid is proposed and gradually developed, but the alternating-current microgrid still has the problems of phase, frequency and the like when being connected to the grid, and the advantages of the direct-current microgrid are more obvious compared with the alternating-current microgrid.
The main form of electric energy in the DC microgrid is direct current, so the DC-DC converter is the most important power electronic device, and is the core device of electric energy conversion and power flow control, which can control the flow of power and realize wide-range voltage regulation, but at present, the DC-DC converter is mainly based on the conventional Pulse Width Modulation (PWM) technology to control the flow of power and realize wide-range voltage regulation, but the design of the compensation network is complex, resulting in high cost of the DC-DC converter.
Disclosure of Invention
In view of this, it is necessary to provide a pulse train control DC-DC converter suitable for a microgrid in order to solve the problem of high cost of the DC-DC converter.
A pulse sequence controlled DC-DC converter device suitable for use in a microgrid, comprising: the device comprises a conversion module, an output voltage sampling module, a pulse generation module and a driving module;
the output end of the conversion module is connected with the input end of the output voltage sampling module, the output end of the output voltage sampling module is connected with the input end of the pulse generation module, the output end of the pulse generation module is connected with the input end of the driving module, and the output end of the driving module is connected with the driving gate pole of the switching tube of the conversion module;
the output voltage sampling module collects an output signal of the conversion module, inputs the output signal into the pulse generation module, controls the pulse generation module to output a high-power pulse signal or a low-power pulse signal to the driving module, and enables the driving module to drive a switching tube of the conversion module to be conducted according to the input high-power pulse signal or the input low-power pulse signal, so that the output voltage of the conversion module is controlled.
In one embodiment, the method further comprises the following steps: a sampling module; the sampling module is connected between the voltage sampling module and the pulse generating module;
and the sampling module transmits the output signal collected by the output voltage sampling module to the pulse generation module at the initial moment of each switching period.
In one embodiment, the pulse generation module comprises: the device comprises a comparator, a D trigger, a first AND gate, a second AND gate, a first memristor, a second memristor and a pulse generation unit;
the positive input end of the comparator is connected with the output end of the voltage sampling point circuit, the output end of the comparator is connected with the D end of the D trigger, the Q end of the D trigger is connected with the first input end of the first AND gate, the Q' end of the D trigger is connected with the first input end of the second AND gate, the output end of the first AND gate is connected with the positive polarity end of the first memristor, the output end of the second AND gate is connected with the positive polarity end of the second memristor, the negative polarity end of the first memristor is connected with the input end of the driving module, the negative polarity end of the second memristor is connected with the input end of the driving module, the second input end of the first AND gate and the CLK end of the D flip-flop are connected to the low-power pulse output end of the pulse generating unit, and the high-power pulse output end of the pulse generating unit is connected to the second input end of the second AND gate.
In one embodiment, when the output voltage input by the pulse generation module is less than or equal to a preset reference voltage, the high-power pulse signal is output;
and when the output voltage input by the pulse generation module is greater than the preset reference voltage, outputting the low-power pulse signal.
In one embodiment, the conversion module is a buck converter.
In one embodiment, the buck converter comprises: the circuit comprises a switching tube, an inductor, a freewheeling diode and an output filter capacitor;
the positive pole of the power supply is connected with the D pole of the switch tube, the S pole of the switch tube is connected with one end of the inductor and the negative pole of the fly-wheel diode, the positive pole of the fly-wheel diode is connected with the negative pole of the power supply, the other end of the inductor is connected with one end of the output filter capacitor and the positive pole of the load, the other end of the output filter capacitor and the negative pole of the load are connected with the negative pole of the power supply, and the input end of the output voltage sampling module is connected between the other end of the inductor and the positive pole of the load.
In one embodiment, the first memristor and the second memristor are replaced by memristor replacement circuits;
the memristor replacement circuit includes: the circuit comprises a first current transmitter, a second current transmitter, an analog multiplier, a first operational amplifier, a second operational amplifier, a third operational amplifier, a fourth operational amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a first diode, a second diode and a first capacitor;
the z pin of the first current transmitter is used as a positive polarity end, the x pin of the first current transmitter is connected with the x pin of the second current transmitter through the first resistor, the y pin of the first current transmitter is grounded, the y pin of the second current transmitter is connected with the w pin of the analog multiplier, the p pin of the first current transmitter is connected with the inverting input end of the first operational amplifier through the second resistor, the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier through the third resistor, the p pin of the second current transmitter is connected with the non-inverting input end of the first operational amplifier through the fourth resistor, the non-inverting input end of the first operational amplifier is grounded through the fifth resistor, and the output end of the first operational amplifier is connected with the non-inverting input end of the first operational amplifier in parallel through the first diode, The second diode is connected with one end of the sixth resistor, the other end of the sixth resistor is connected with the inverting input end of the second operational amplifier, the inverting input end of the second operational amplifier is connected with the output end of the second operational amplifier through the first capacitor, the seventh resistor is connected with the first capacitor in parallel, and the non-inverting input end of the second operational amplifier is grounded; the output end of the second operational amplifier is connected with the inverting input end of the third operational amplifier through the eighth resistor, the non-inverting input end of the third operational amplifier is grounded through the ninth resistor, the non-inverting input end of the third operational amplifier is connected with the output end of the third operational amplifier through the tenth resistor, the output end of the third operational amplifier is connected with the inverting input end of the fourth operational amplifier through the eleventh resistor, meanwhile, the inverting input end of the fourth operational amplifier is connected with the negative power supply through the twelfth resistor, the inverting input end of the fourth operational amplifier is connected with the output end of the fourth operational amplifier through the thirteenth resistor, the non-inverting input end of the fourth operational amplifier is grounded, and the x1 pin of the analog multiplier is connected with the output end of the first operational amplifier, the pin y2 of the analog multiplier is connected with the output end of the fourth operational amplifier, the pin x2 and the pin y1 of the analog multiplier are grounded, the pin w of the analog multiplier is connected with the pin z of the analog multiplier through the fourteenth resistor, the pin z of the analog multiplier is grounded through the fifteenth resistor, and the pin z of the second current transmitter is used as a negative polarity end.
In one embodiment, the first current conveyor and the second current conveyor adopt AD844 chips.
In one embodiment, the analog multiplier adopts an AD633 chip.
In one embodiment, the first operational amplifier, the second operational amplifier, the third operational amplifier and the fourth operational amplifier are TL084 chips.
According to the pulse sequence control DC-DC conversion device suitable for the microgrid, the output signal of the conversion module is collected through the output voltage sampling module and is input into the pulse generation module, the pulse generation module is controlled to output the high-power pulse signal or the low-power pulse signal to the driving module, the driving module drives the switching tube of the conversion module to be conducted according to the input high-power pulse signal or the low-power pulse signal, the output voltage of the conversion module is controlled, the circuit of the DC-DC conversion device is simple, a compensation network and the like are not needed, the power consumption and the circuit implementation area are greatly reduced, and the circuit cost is reduced.
Drawings
FIG. 1 is a block diagram of a pulse train controlled DC-DC converter suitable for use in a microgrid according to one embodiment;
FIG. 2 is a schematic circuit topology diagram of a pulse generation module in a pulse sequence controlled DC-DC conversion device suitable for a microgrid in one embodiment;
FIG. 3 is a schematic circuit topology diagram of a memristor replacement circuit in a pulse sequence control DC-DC conversion device suitable for a micro-grid in one embodiment;
FIG. 4 is a voltage-current characteristic diagram of a memristor replacement circuit in one embodiment;
FIG. 5 is a schematic circuit topology diagram of a pulse sequence controlled DC-DC conversion device suitable for a microgrid in one embodiment
Fig. 6 is a simulation waveform diagram of a pulse sequence controlled DC-DC conversion device suitable for a microgrid in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the scope of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, in one embodiment, there is provided a pulse train controlled DC-DC conversion device suitable for a microgrid, including: the device comprises a conversion module 10, an output voltage sampling module 20, a pulse generation module 30 and a driving module 40;
the output end of the conversion module 10 is connected with the input end of the output voltage sampling module 20, the output end of the output voltage sampling module 20 is connected with the input end of the pulse generation module 30, the output end of the pulse generation module 30 is connected with the input end of the driving module 40, and the output end of the driving module 40 is connected with the switching tube driving gate of the conversion module 10; the output voltage sampling module 20 collects the output signal of the conversion module 10, inputs the output signal to the pulse generation module 30, controls the pulse generation module 30 to output a corresponding high power pulse signal or low power pulse signal to the driving module 40, and enables the driving module 40 to drive the switching tube of the conversion module 10 to be conducted according to the input high power pulse signal or low power pulse signal, thereby controlling the output voltage V of the conversion module 100。
Wherein, the conversion module 10 outputs different output voltages V through the on-time control of the switch tube0The conversion module 10 may be a buck converter. The output voltage sampling module 20 is used for collecting an output signal of the conversion module 10, which is the output voltage V0. The pulse generating module 30 is used for generating a high power pulse signal and a low power pulse signal with the same frequency and different duty ratios. The driving module 40 drives the switching tube in the conversion unit 10 to conduct according to the input high power pulse signal or the low power pulse signal, thereby controlling the output voltage V of the conversion unit 100。
When the output voltage input by the pulse generation module 30 is less than or equal to the preset reference voltage, the output pulse signal is a high-power pulse signal; when the output voltage input by the pulse generating module 30 is greater than the preset reference voltage, the output pulse signal is a low-power pulse signal. When the driving module 40 inputs a high-power pulse signal, the high-power pulse signal is used as a control signal to increase the energy absorbed by the conversion module 10 from the input end, so that the output voltage rises; when the driving module 40 inputs a low-power pulse signal, the low-power pulse signal is used as a control signal, so that the energy absorbed by the driving module 40 from the input end is reduced, the output voltage is reduced, the circuit of the DC-DC conversion device is simple, a compensation network is not needed, the power consumption and the circuit implementation area are greatly reduced, and the circuit cost is reduced.
In one embodiment, a buck converter includes: a switch tube S1, an inductor L1, a freewheeling diode D1 and an output filter capacitor C1; power supply VinThe anode of the switch tube S1 is connected with the D pole of the switch tube S1, the S pole of the switch tube S1 is connected with one end of the inductor L1 and the cathode of the fly-wheel diode D1, the anode of the fly-wheel diode D1 is connected with the power supply VinThe other end of the inductor L1 is connected to one end of an output filter capacitor C1 and a load R0The other end of the output filter capacitor C1 and the load R0Is connected with a power supply VinThe other end of the inductor L1 and the load R0The input end of the output voltage sampling module 20 is connected between the positive poles, and the G pole of the switching tube S1 is connected with the output end of the driving module 40.
The driving module 40 drives the switching tube S1 in the converting unit 10 to be turned on according to the input high power pulse signal or the low power pulse signal, so as to control the output voltage V of the converting unit 100。
In one embodiment, as shown in fig. 2, the pulse generation module 30 includes: the pulse generator comprises a comparator 31, a D trigger DFF, a first AND gate AN1, a second AND gate AN2, a first memristor M1, a second memristor M2 and a pulse generation unit 32; the positive input end of the comparator 31 is connected with the output end of the voltage sampling point circuit 20, the output end of the comparator 31 is connected with the D end of the D flip-flop DFF, the Q end of the D flip-flop DFF is connected with the first input end of the first and gate AN1, the Q' end of the D flip-flop DFF is connected with the first input end of the second and gate AN2, the output end of the first and gate AN1 is connected with the positive polarity end of the first memristor M1, the output end of the second and gate AN2 is connected with the positive polarity end of the second memristor M2, the negative polarity end of the first memristor M1 is connected with the input end of the driving module 40, the negative polarity end of the second memristor M2 is connected with the input end of the driving module 40, the second input end of the first and gate AN1 and the CLK end of the D flip-flop DFF are connected with the low-power pulse output end of the pulse generating unit 32, and the high-power pulse output end of the pulse.
The first memristor M1 and the second memristor M2 can be memristors of the same type, the memristors are novel two-end nonlinear circuit elements, have the characteristics of nonvolatility, nanoscale and the like, can be applied to design of memories, digital circuits, neural networks, analog circuits and the like, the resistance values of the memristors can be converted between a high resistance state and a low resistance state according to the difference of voltages applied to two ends of the memristors, and when enough voltage is applied to the positive direction of the memristors, the memristors can be changed from the high resistance state to the low resistance state; when a sufficiently large voltage is reversely applied to the memristor, the memristor is changed from a low resistance state to a high resistance state, the resistance state change is also influenced by the frequency of an external signal, and the resistance value of the memristor is changed nonlinearly; when the voltage at the two ends of the memristor is lower than the threshold voltage, the resistance value of the memristor is slightly or basically unchanged, and when the voltage at the two ends of the memristor is higher than the threshold voltage, the state of the memristor is changed; the difference of resistance values between two resistance states of the memristor is large, the state change time can be as low as nanosecond level, and the working voltage is low. The first memristor M1 and the second memristor M2 can also adopt a memristor to replace a circuit to replace a memristor, and the function of the memristor is realized by replacing the circuit with the memristor.
A predetermined reference voltage V is input to the negative input terminal of the comparator 31refThe comparator 31 compares the output signal collected by the voltage sampling point circuit 20 with a preset reference voltage VrefComparing, when Vo is less than or equal to VrefWhen the output of the comparator 31 is low, the Q terminal of the D flip-flop DFF outputs low, the Q' terminal of the D flip-flop DFF outputs high, and the first AND gate IN1 outputs lowLevel, second AND gate IN2 outputs a high power pulse signal PHWhen the first memristor M1 changes to a high resistance state, the second memristor M2 changes to a low resistance state, the pulse generation module 30 outputs high-power pulses, and increases energy absorbed by the DC-DC conversion device from the input end and controlled by a pulse sequence applicable to the microgrid, so that the output voltage of the DC-DC conversion device is forced to rise; when Vo > VrefAt this time, the output of the comparator 31 is at high level, the Q terminal of the D flip-flop DFF outputs high level, the Q' terminal of the D flip-flop DFF outputs low level, and the first AND gate IN1 outputs the low power pulse PLThe second and gate IN2 outputs a low level, the first memristor M1 changes to a low resistance state, the second memristor M2 changes to a high resistance state, and the pulse generation module 30 outputs a low-power pulse, so that energy absorbed by the DC-DC conversion device from the input end is controlled by a pulse sequence suitable for the microgrid, and the output voltage of the DC-DC conversion device is forced to be reduced. Through the transition of the high-low resistance states of the first memristor M1 and the second memristor M2 and the relationship between the frequency and the magnitude of the voltage signals at the two ends of the first memristor M1 and the second memristor M2, the rapid selection of the pulse signals is realized, and the response speed of the pulse sequence control DC-DC conversion device suitable for the micro-grid is improved.
In one embodiment, as shown in fig. 3, the first memristor M1 and the second memristor M2 are each replaced by memristors instead of electrical circuits; the memristor replacement circuit includes: a first current transmitter U1, a second current transmitter U2, an analog multiplier U3, a first operational amplifier U4A, a second operational amplifier U4B, a third operational amplifier U4C, a fourth operational amplifier U4D, a first resistor RinA second resistor Rsb2A third resistor Rsb4A fourth resistor Rsb1A fifth resistor Rsb3A sixth resistor RiA seventh resistor RcAn eighth resistor R1A ninth resistor RmTenth resistor R, eleventh resistor R2And a twelfth resistor R3A thirteenth resistor R4A fourteenth resistor RwA fifteenth resistor RzA first diode D2, a second diode D3 and a first capacitor Ci；
The z pin of the first current conveyor U1 is used as the positive polarity terminal A, and the x pin of the first current conveyor U1 passes through the first current conveyor U1Resistance RinThe pin x of the second current transmitter U2 is connected, the pin y of the first current transmitter U1 is grounded, the pin y of the second current transmitter U2 is connected with the pin w of the analog multiplier U3, and the pin p of the first current transmitter U1 is connected with the pin w of the analog multiplier U3 through a second resistor Rsb2Connected to the inverting input "-" of the first operational amplifier U4A, the inverting input "-" of the first operational amplifier U4A is connected through a third resistor Rsb4Connected with the output end of the first operational amplifier U4A, the p pin of the second current transmitter U2 passes through a fourth resistor Rsb1Is connected to the non-inverting input "+" of the first operational amplifier U4A, the non-inverting input "+" of the first operational amplifier U4A being connected through a fifth resistor Rsb3The output terminal of the first operational amplifier U4A passes through the first diode D2, the second diode D3 and the sixth resistor R in inverse parallel connection with the groundiIs connected to one end of a sixth resistor RiIs connected to the inverting input of the second operational amplifier U4B, the inverting input of the second operational amplifier U4B being connected through a first capacitor CiA seventh resistor R connected to the output of the second operational amplifier U4BcAnd a first capacitor CiThe non-inverting input end "+" of the second operational amplifier U4B is connected in parallel with each other and is grounded; the output terminal of the second operational amplifier U4B passes through an eighth resistor R1Connected to the inverting input "-" of the third operational amplifier U4C, the non-inverting input "+" of the third operational amplifier U4C is connected through a ninth resistor RmGrounded, the non-inverting input "+" of the third operational amplifier U4C is connected to the output of the third operational amplifier U4C through a tenth resistor R, and the output of the third operational amplifier U4C is connected to the output of the third operational amplifier U4C through an eleventh resistor R2Is connected to the inverting input "-" of the fourth operational amplifier U4D, while the inverting input "-" of the fourth operational amplifier U4D is connected through a twelfth resistor R3Connected to the negative supply, the inverting input "-" of the fourth operational amplifier U4D is connected through a thirteenth resistor R4Is connected with the output terminal of the fourth operational amplifier U4D, the non-inverting input terminal "+" of the fourth operational amplifier U4D is grounded, the x1 pin of the analog multiplier U3 is connected with the output terminal of the first operational amplifier U4A, the y2 pin of the analog multiplier U3 is connected with the input terminal of the fourth operational amplifier U4DThe output end is connected, the x2 pin and the y1 pin of the analog multiplier U3 are grounded, and the w pin of the analog multiplier U3 passes through a fourteenth resistor RwConnected with the z pin of the analog multiplier U3, the z pin of the analog multiplier U3 passes through a fifteenth resistor RzGrounded and the z pin of the second current conveyor U2 serves as the negative polarity terminal B.
The memristor replacing circuit is used as a memristor to replace a first memristor and a second memristor to be connected into the pulse generating module 30, a positive polarity end A of the memristor replacing circuit corresponds to a positive polarity end of the memristor, and a negative polarity end B of the memristor replacing circuit corresponds to a negative polarity end of the memristor. The analog multiplier U3 may be an AD633 chip or an analog multiplier chip of another type. The operational amplifiers used by the first operational amplifier, the second operational amplifier, the third operational amplifier and the fourth operational amplifier can be TL084 chips or operational amplifier chips of other models. The first current conveyor and the second current conveyor can adopt AD844 chips, and can also be other types of current conveyor chips.
In order to verify that the memristor replacing circuit can realize the functions of the memristor, as shown in fig. 3, an excitation voltage V is connected to a positive polarity end a of the memristor replacing circuit and a negative polarity end B of the memristor replacing circuitABThe current flowing from the positive terminal A of the memristor replacing circuit is i, and flows through the first resistor RinIs i, and the output voltage at the output of the first operational amplifier U4A is VsubThe current conveyors adopted by the first current conveyor and the second current conveyor are AD844 chips, according to the characteristics of the AD844 chips, the voltage of the x pin of the AD844 chip follows the voltage of the y pin of the AD844 chip, the current of the z pin of the AD844 chip follows the current of the x pin of the AD844 chip, the voltage of the p pin of the AD844 chip follows the voltage of the z pin of the AD844 chip, and then the current flows through the first resistor RinThe current i of (a) is:
Figure BDA0002733402140000102
in order to replace the voltage V at two ends of the circuit by the output and the memristor of the first operational amplifier U4AABIn proportion, the parameter should be set to Rsb1＝Rsb2And Rsb3＝Rsb4At this time, the output voltage V of the first operational amplifier U4AsubComprises the following steps:
Figure BDA0002733402140000101
on and off voltages of the memristor are simulated through the first diode D2 and the second diode D3 which are connected in anti-parallel, if the voltages input to the first diode D2 and the second diode D3 are larger than the threshold voltage V of the first diode D2th+Or less than the threshold voltage V of the second diode D3th-The voltages inputted to the first and second diodes D2 and D3 may be transferred to the sixth resistor Ri(ii) a If the voltages inputted to the first diode D2 and the second diode D3 are in the threshold voltage range Vth+～Vth-In this case, the voltages output by the first diode D2 and the second diode D3 can be regarded as zero. The first diode D2 and the second diode D3 are similar diodes, so that the threshold voltages in the forward and reverse directions are the same, and the voltage V input to the first diode D2 and the second diode D3 is the samethAnd the voltage V' output by the first diode D2 and the second diode D3 can be expressed as:
V'＝Vsub-0.5[|Vsub+Vth|-|Vsub-Vth|]
in the formula:
Vth＝|Vth+|＝|Vth-|
since the resistance change of the memristor depends on the change of the flux linkage through the memristor, an integrating circuit is adopted in the circuit shown in fig. 3, and the output of the integrator can be expressed as:
Figure BDA0002733402140000111
in the formula (I), the compound is shown in the specification,
Figure BDA0002733402140000112
representing the flux linkage, is equal to the integral of V' with respect to time.
The output signal of the fourth operational amplifier U4D is based on V and is generated by a bistable circuit (i.e., including the third operational amplifier U4C and an external resistor-capacitor) and an inverting adder (i.e., including the fourth operational amplifier U4D and an external resistor-capacitor)xSwitching between binary signals of the same polarity to determine the high resistance state of the memristor and to determine the low resistance state memristive value of the memristor, the output voltage V of the fourth operational amplifier U4DGCan be expressed as:
Figure BDA0002733402140000113
in the formula, VCCAnd VEEPositive and negative voltage of two power supplies of the operational amplifier, respectively, a ═ R4/R2，b＝R4/R3，VsIs an output (with a value of V) other than the bistable circuitCCOr VEE) In addition, the other input signal of the inverting adder, VS＝VEE. Voltage aVEE+bVsAnd aVCC+bVsRespectively, to reflect the high and low memos values of the memory. Threshold voltage V of third operational amplifier U4CTHAnd VTLThe expression of (a) is as follows:
Figure BDA0002733402140000114
the analog multiplier U3 is an important component of a memristor replacement circuit that may be used to generate a voltage proportional to the memristor current. The two input signals of the analog multiplier U3 represent the memristor voltage and the memristor memristive value, respectively. A fourteenth resistance RwAnd a fifteenth resistor RzFor adjusting the multiplication coefficients. According to the data manual of the AD633 chip, the following expression can be obtained:
Figure BDA0002733402140000121
the first current transmitter U1 and the second current transmitter U2 are used for transmitting the voltage VwThe current I is converted into the current I to realize floating connection, and the AD844 chip characteristic shows that the current flowing into the positive terminal A is the same as the current flowing into the negative terminal B, namely the current flows through the resistor RinThe equivalent memristor value G of the memristor replacement circuit can be derived as follows:
Figure BDA0002733402140000122
as shown in fig. 4, the voltage-current characteristic curve of the memristor replacement circuit can be used to obtain that the memristor value can be switched between two stable memristor values according to the voltage transformation, which indicates that the memristor replacement circuit meets the basic dynamic characteristics of the voltage-controlled binary memristor and can replace the memristor.
The pulse sequence control DC-DC conversion device suitable for the microgrid is characterized in that an output signal of the conversion module 10 is collected through the output voltage sampling module 20 and is input into the pulse generation module 30, the pulse generation module 30 is controlled to output a high-power pulse signal or a low-power pulse signal to the driving module 40, the driving module 40 drives a switching tube of the conversion module 10 to be conducted according to the input high-power pulse signal or the input low-power pulse signal, and therefore the output voltage of the conversion module 10 is controlled, the circuit of the DC-DC conversion device is simple, a compensation network is not needed, the power consumption and the circuit implementation area are greatly reduced, and the circuit cost is reduced.
In one embodiment, the pulse sequence controlled DC-DC converter device for a microgrid further comprises: a sampling module 50; the sampling module 50 is connected between the voltage sampling module 20 and the pulse generating module 30; the sampling module 50 transmits the output signal collected by the output voltage sampling module 20 to the pulse generation module 30 at the start time of each switching cycle.
The sampling module 50 can transmit the output signal collected by the output voltage sampling module 20 to the pulse generating module 30 only at the start time of each switching cycle.
In one embodiment, as shown in fig. 5, there is provided a pulse train controlled DC-DC conversion device suitable for a microgrid, including: the pulse generator comprises a switching tube S1, AN inductor L1, a freewheeling diode D1, AN output filter capacitor C1, AN output voltage sampling module 20, a sampling module 50, a comparator 31, a D flip-flop DFF, a first AND gate AN1, a second AND gate AN2, a first memristor M1, a second memristor M2, a pulse generating unit 32 and a driving module 40.
Wherein, the power supply VinThe anode of the switch tube S1 is connected with the D pole of the switch tube S1, the S pole of the switch tube S1 is connected with one end of the inductor L1 and the cathode of the fly-wheel diode D1, the anode of the fly-wheel diode D1 is connected with the power supply VinThe other end of the inductor L1 is connected to one end of an output filter capacitor C1 and a load R0The other end of the output filter capacitor C1 and the load R0Is connected with a power supply VinThe other end of the inductor L1 and the load R0The output end of the output voltage sampling module 20 is connected with the input end of the sampling module 50, the output end of the sampling module 50 is connected with the positive input end of the comparator 31, the negative input end of the comparator 31 is used for connecting a preset reference voltage, the output end of the comparator 31 is connected with the D end of the D flip-flop DFF, the Q end of the D flip-flop DFF is connected with the first input end of the first and-gate AN1, the Q' end of the D flip-flop DFF is connected with the first input end of the second and-gate AN2, the output end of the first and-gate AN1 is connected with the positive end of the first memristor M1, the output end of the second and-gate AN2 is connected with the positive end of the second memristor M2, the negative end of the first memristor M1 is connected with the input end of the driving module 40, the negative end of the second memristor M2 is connected with the input end of the driving module 40, the second input end of the first and-gate AN1 and the CLK end of the D flip-flop f are connected with the low-power pulse The high-power pulse output end of the pulse generating unit 32 is connected to the second input end of the second and gate AN2, and the output end of the driving module 40 is connected to the G pole of the switching tube S1.
Due to being suitable for micro-electricityThe pulse sequence of the network controls the input energy and the consumed energy of the DC-DC conversion device to be unbalanced in each switching period, so that pulse signals output by the output ends of the memristor M1 and the memristor M2 are continuously switched between high-power pulses and low-power pulses, and a stable and ordered pulse sequence cycle period is formed when the pulse signals are stably operated. The pulse sequence has a cycle period of muHA high power pulse sum muLA low power pulse consisting of a pulse cycle in which the input energy and the output energy are dynamically balanced to maintain the output voltage V0Is constant. The manner in which the pulse generation module 30 outputs the control pulse can be expressed by the following expression:
Figure BDA0002733402140000141
where D generally refers to the duty cycle of the control pulse signal, which can be switched between two values under different output voltage conditions. DH、DLRespectively corresponding to high power pulse signals PHAnd a low power pulse signal PLThe duty cycle of (c).
The conversion module 10 therefore operates at high power pulse signals PHAnd a low power pulse signal PLThe relationship to the boost ratio is as follows:
Figure BDA0002733402140000142
in the formula, DavIs the average duty cycle of the output of memristor M1 and memristor M2.
In order to verify the voltage regulation capability of the pulse sequence control DC-DC conversion device suitable for the microgrid, the verification can be performed based on a circuit diagram as shown in fig. 5, wherein the parameters of the corresponding elements are: power supply VinVoltage of 12V, reference voltage Vref4V, the switching frequency F of the pulse train control DC-DC converter suitable for the microgrid is 20kHz, the inductance of the inductor L1 is 50 muH, the capacitance of the filter capacitor C1 is 4 muF, and the duty ratio D of the high-power pulse trainHDuty cycle D of 0.4, low power pulse trainLIs 0.2, load R0The resistance value of (2) is 5 omega; the starting voltage Vth + of the memristor is 0.7V, the closing voltage Vth-of the memristor is-0.7V, and the state of the memristor is not changed when the voltage at the two ends of the memristor is-0.7V. As shown in fig. 6, a simulation waveform diagram of the pulse sequence controlled DC-DC converter suitable for the micro grid can be seen, where the output voltage Vo of the conversion module 10 is at the preset reference voltage VrefNearby fluctuation, output voltage fluctuation amount of 103mV, and control pulse sequence combination thereof of 1PH-3PL. It can be seen that the pulse sequence control DC-DC conversion device suitable for the microgrid can effectively regulate the output voltage Vo of the conversion module 10.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features. The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A pulse train controlled DC-DC converter device for a microgrid, comprising: the device comprises a conversion module, an output voltage sampling module, a pulse generation module and a driving module;
the output end of the conversion module is connected with the input end of the output voltage sampling module, the output end of the output voltage sampling module is connected with the input end of the pulse generation module, the output end of the pulse generation module is connected with the input end of the driving module, and the output end of the driving module is connected with the driving gate pole of the switching tube of the conversion module;
the output voltage sampling module collects an output signal of the conversion module, inputs the output signal into the pulse generation module, controls the pulse generation module to output a high-power pulse signal or a low-power pulse signal to the driving module, and enables the driving module to drive a switching tube of the conversion module to be conducted according to the input high-power pulse signal or the input low-power pulse signal, so that the output voltage of the conversion module is controlled.
2. The pulse train controlled DC-DC converter device according to claim 1, further comprising: a sampling module;
the sampling module is connected between the voltage sampling module and the pulse generating module;
and the sampling module transmits the output signal collected by the output voltage sampling module to the pulse generation module at the initial moment of each switching period.
3. The pulse train controlled DC-DC converter device for a microgrid according to claim 2, wherein the pulse generation module comprises: the device comprises a comparator, a D trigger, a first AND gate, a second AND gate, a first memristor, a second memristor and a pulse generation unit;
the positive input end of the comparator is connected with the output end of the voltage sampling point circuit, the output end of the comparator is connected with the D end of the D trigger, the Q end of the D trigger is connected with the first input end of the first AND gate, the Q' end of the D trigger is connected with the first input end of the second AND gate, the output end of the first AND gate is connected with the positive polarity end of the first memristor, the output end of the second AND gate is connected with the positive polarity end of the second memristor, the negative polarity end of the first memristor is connected with the input end of the driving module, the negative polarity end of the second memristor is connected with the input end of the driving module, the second input end of the first AND gate and the CLK end of the D flip-flop are connected to the low-power pulse output end of the pulse generating unit, and the high-power pulse output end of the pulse generating unit is connected to the second input end of the second AND gate.
4. The pulse train controlled DC-DC converter device for the microgrid of claim 1, wherein the high-power pulse signal is output when the output voltage inputted by the pulse generation module is less than or equal to a preset reference voltage;
and when the output voltage input by the pulse generation module is greater than the preset reference voltage, outputting the low-power pulse signal.
5. The pulse train controlled DC-DC converter according to claim 1, wherein the converter module is a buck converter.
6. The pulse train controlled DC-DC converter device for a microgrid according to claim 5, characterized in that said buck converter comprises: the circuit comprises a switching tube, an inductor, a freewheeling diode and an output filter capacitor;
the positive pole of the power supply is connected with the D pole of the switch tube, the S pole of the switch tube is connected with one end of the inductor and the negative pole of the fly-wheel diode, the positive pole of the fly-wheel diode is connected with the negative pole of the power supply, the other end of the inductor is connected with one end of the output filter capacitor and the positive pole of the load, the other end of the output filter capacitor and the negative pole of the load are connected with the negative pole of the power supply, the other end of the inductor is connected with the input end of the output voltage sampling module between the positive poles of the load, and the G pole of the switch tube is connected with the output end of the driving module.
7. The pulse train controlled DC-DC converter device for the microgrid of claim 3, wherein the first memristor and the second memristor are respectively replaced by memristor replacing circuits;
the memristor replacement circuit includes: the circuit comprises a first current transmitter, a second current transmitter, an analog multiplier, a first operational amplifier, a second operational amplifier, a third operational amplifier, a fourth operational amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a first diode, a second diode and a first capacitor;
the z pin of the first current transmitter is used as a positive polarity end, the x pin of the first current transmitter is connected with the x pin of the second current transmitter through the first resistor, the y pin of the first current transmitter is grounded, the y pin of the second current transmitter is connected with the w pin of the analog multiplier, the p pin of the first current transmitter is connected with the inverting input end of the first operational amplifier through the second resistor, the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier through the third resistor, the p pin of the second current transmitter is connected with the non-inverting input end of the first operational amplifier through the fourth resistor, the non-inverting input end of the first operational amplifier is grounded through the fifth resistor, and the output end of the first operational amplifier is connected with the non-inverting input end of the first operational amplifier in parallel through the first diode, The second diode is connected with one end of the sixth resistor, the other end of the sixth resistor is connected with the inverting input end of the second operational amplifier, the inverting input end of the second operational amplifier is connected with the output end of the second operational amplifier through the first capacitor, the seventh resistor is connected with the first capacitor in parallel, and the non-inverting input end of the second operational amplifier is grounded; the output end of the second operational amplifier is connected with the inverting input end of the third operational amplifier through the eighth resistor, the non-inverting input end of the third operational amplifier is grounded through the ninth resistor, the non-inverting input end of the third operational amplifier is connected with the output end of the third operational amplifier through the tenth resistor, the output end of the third operational amplifier is connected with the inverting input end of the fourth operational amplifier through the eleventh resistor, meanwhile, the inverting input end of the fourth operational amplifier is connected with the negative power supply through the twelfth resistor, the inverting input end of the fourth operational amplifier is connected with the output end of the fourth operational amplifier through the thirteenth resistor, the non-inverting input end of the fourth operational amplifier is grounded, and the x1 pin of the analog multiplier is connected with the output end of the first operational amplifier, the pin y2 of the analog multiplier is connected with the output end of the fourth operational amplifier, the pin x2 and the pin y1 of the analog multiplier are grounded, the pin w of the analog multiplier is connected with the pin z of the analog multiplier through the fourteenth resistor, the pin z of the analog multiplier is grounded through the fifteenth resistor, and the pin z of the second current transmitter is used as a negative polarity end.
8. The pulse sequence controlled DC-DC conversion device suitable for the micro-grid according to claim 7, wherein the first current transmitter and the second current transmitter employ AD844 chips.
9. The device of claim 7, wherein the analog multiplier is an AD633 chip.
10. The pulse train controlled DC-DC converter according to claim 7, wherein the first operational amplifier, the second operational amplifier, the third operational amplifier and the fourth operational amplifier use TL084 chip.
CN202011125254.8A 2020-10-20 2020-10-20 Pulse sequence control DC-DC conversion device suitable for micro-grid Pending CN112290793A (en)

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