CN112289962A - Etching apparatus - Google Patents
Etching apparatus Download PDFInfo
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- CN112289962A CN112289962A CN202011109694.4A CN202011109694A CN112289962A CN 112289962 A CN112289962 A CN 112289962A CN 202011109694 A CN202011109694 A CN 202011109694A CN 112289962 A CN112289962 A CN 112289962A
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- 238000005530 etching Methods 0.000 title claims abstract description 123
- 239000007788 liquid Substances 0.000 claims abstract description 105
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 72
- 238000000992 sputter etching Methods 0.000 claims abstract description 72
- 150000002500 ions Chemical class 0.000 claims abstract description 31
- 239000007921 spray Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000010936 titanium Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 239000002923 metal particle Substances 0.000 claims description 12
- 230000010718 Oxidation Activity Effects 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 150000001768 cations Chemical class 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 abstract description 22
- 229910052709 silver Inorganic materials 0.000 description 22
- 239000004332 silver Substances 0.000 description 22
- 238000007254 oxidation reaction Methods 0.000 description 21
- -1 silver ions Chemical class 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000897 Babbitt (metal) Inorganic materials 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The application discloses etching equipment includes: the etching solution supply source comprises a first liquid storage tank, a second liquid storage tank and an ion concentration adjusting device arranged between the first liquid storage tank and the second liquid storage tank, wherein the first liquid storage tank contains metal ion etching solution; the spraying device is communicated with the first liquid storage tank of the etching liquid supply source so as to spray the metal ion etching liquid to at least one target; the liquid supply pipeline is used for fluidly connecting the spraying device and a first liquid storage tank of an etching liquid supply source; wherein, the ion concentration adjusting device generates electrons to adjust the concentration of metal ions in the metal ion etching solution.
Description
Technical Field
The application relates to the technical field of display, in particular to etching equipment.
Background
The anode of the OLED is of an ITO/Ag/ITO laminated structure at present, an etching process generally adopts etching liquid to etch a silver film layer of the anode, the content of silver ions in the etching liquid is gradually increased along with the increase of the number of etched sheets, the activity of the silver ions is high, and the silver ions are easily separated out into silver particles when the concentration is too high and remain on a product to influence the yield of the product; therefore, the concentration of silver ions in the etching solution needs to be strictly controlled, the main control method at present is to control the service life of the etching solution, and usually, the service life of the etching solution is only 24 hours, and a new etching solution needs to be replaced to control the concentration of silver ions, which results in high cost of the etching solution.
Accordingly, it is desirable to provide an etching apparatus.
Disclosure of Invention
The embodiment of the application provides an etching equipment, through add metal titanium/aluminium alloy board (Ti/Al) between the first reservoir of etching solution supply source and second reservoir, through slowly consuming metal Al in the second reservoir, can increase the electron density on metal Ti surface, the silver ion of the metal ion etching solution that makes in the first reservoir takes place reduction reaction and separates out silver particle and adsorb on metal Ti's surface, reach the purpose of silver ion content in the control metal ion etching solution, the life of extension metal ion etching solution, reduce the cost of metal ion etching solution.
The embodiment of the application also provides etching equipment which is provided with an etching liquid supply source, wherein the etching liquid supply source comprises a first liquid storage tank, a second liquid storage tank and an ion concentration adjusting device arranged between the first liquid storage tank and the second liquid storage tank; wherein the first liquid storage tank contains metal ion etching liquid; the ion concentration adjusting device generates electrons to adjust the concentration of metal ions in the metal ion etching solution.
In some embodiments, the ion concentration adjusting device includes a bearing layer and an oxidation layer, which are stacked, wherein the bearing layer faces the first reservoir and contacts with the metal ion etching solution, and the oxidation layer faces the second reservoir and contacts with the second ion etching solution contained in the second reservoir.
In some embodiments, the oxidation layer of the ion concentration adjusting apparatus may undergo an oxidation reaction in the second ionic etching solution to generate electrons; the bearing layer is used for bearing the metal particles separated out by the metal ion etching solution.
In some embodiments, the oxidation activity of the cationic element of the second ionic etching liquid is greater than the oxidation activity of the metal ionic element of the metal ionic etching liquid.
In some embodiments, the material of the oxide layer is a metal, and the metal element of the oxide layer is the same as the cation element of the second ionic etching solution.
In some embodiments, the bearing layer of the ion concentration adjusting device is a metal titanium plate, and the oxide layer of the ion concentration adjusting device is a metal aluminum plate.
In some embodiments, the etching apparatus further comprises a spraying device, wherein the spraying device is communicated with the first storage tank of the etching liquid supply source to spray the metal ion etching liquid to at least one target.
In some embodiments, the etching apparatus further comprises a liquid supply line for fluidly connecting the spray device and the first reservoir of the etching liquid supply source.
In some embodiments, the etching apparatus further comprises an etching chamber for performing an etching process, and the spraying device is disposed in the etching chamber.
In some embodiments, the etching apparatus further comprises a return line fluidly connecting the etching chamber and the first reservoir of the etching liquid supply source.
The etching equipment provided by the embodiment of the application comprises an etching liquid supply source and a spraying device which are communicated with each other, wherein the etching liquid supply source comprises a first liquid storage tank, a second liquid storage tank and an ion concentration adjusting device arranged between the first liquid storage tank and the second liquid storage tank, the first liquid storage tank contains metal ion etching liquid, the second liquid storage tank contains second ion etching liquid, the ion concentration adjusting device comprises an oxidation layer and a bearing layer, the oxidation layer faces the second liquid storage tank and is in contact with the second ion etching liquid to generate oxidation reaction so as to generate electrons, and the bearing layer faces the first liquid storage tank and is used for bearing metal particles separated out by the metal ion etching liquid; and the oxide layer is an aluminum plate, and the bearing layer is a titanium plate. The embodiment of the application the etching equipment can realize the metal ion content in the metal ion etching solution of adjusting the etching solution supply source, can keep the stability of silver ion content, prolongs the service life of metal ion etching solution, reduces the cost of metal ion etching solution to solve the technical problem that the cost of the etching solution that current etching equipment leads to becomes high because metal ion separates out metal particle influence etching effect at the in-process of etching metal rete.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an etching apparatus according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of an etching apparatus according to an embodiment of the present disclosure.
Fig. 3 is a diagram illustrating a state in which a target surface adsorbs metal particles in the prior art.
Fig. 4 is a diagram illustrating an improved state of metal particles on a target surface according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Specifically, please refer to fig. 1 to 2, in which fig. 1 is a schematic structural diagram of an etching apparatus provided in an embodiment of the present application, and fig. 2 is a schematic operating diagram of the etching apparatus provided in the embodiment of the present application. As shown in fig. 1, an etching apparatus provided in the embodiments of the present application is used for performing wet etching on at least one target T by using a metal ion etching solution E1, where the target T is an etching object to be subjected to wet etching, and the etching apparatus includes an etching solution supply source 1, a spraying device 2, a solution supply pipeline 3, and an ion concentration adjusting device 4.
In this embodiment, the etching solution supply source 1 is communicated with the spraying device 2, and the etching solution supply source 1 provides the metal ion etching solution E1 for the spraying device 2, at least one target T is disposed in the spraying device 2, and the spraying device 2 sprays the metal ion etching solution E1 on the at least one target T; the spraying device 2 comprises a support 21 and a plurality of nozzles 22 communicated with the support 21, and the nozzles 22 are used for performing spraying etching treatment on the target T by using the metal ion etching solution E1. In addition, the etching apparatus further includes an etching chamber (not shown) for performing an etching process, and the spraying device 2 is disposed in the etching chamber.
As shown in fig. 1, the etching solution supply source 1 includes a first liquid storage tank 6, a second liquid storage tank 7, and the ion concentration adjusting device 4 disposed between the first liquid storage tank 6 and the second liquid storage tank 7, the ion concentration adjusting device 4 generating electrons to adjust the concentration of metal ions in the metal ion etching solution E1, wherein the metal ion etching solution E1 is disposed in the first etching tank 6, and the second ion etching solution E2 is disposed in the second etching tank 7; the first etching groove 6 and the second etching groove 7 are of an integral structure, and the first etching groove 6 is larger than the second etching groove 7 in accommodating space.
It should be further noted that, in the present embodiment, the liquid supply pipeline 3 is used for fluidly connecting the spraying device 2 and the first reservoir 6 of the etching liquid supply source 1, and the liquid supply pipeline 3 includes a flow supply pipeline 31 and a return pipeline 32. Specifically, as shown in fig. 1, the first reservoir 6 includes a first liquid inlet 8 and a first liquid outlet 9, the spraying device 2 comprises a second liquid inlet 23 and a second liquid outlet 24, the liquid supply pipeline 31 is fluidly connected between the first liquid outlet 9 and the second liquid inlet 23, a liquid supply pump 5 is connected to the liquid supply pipeline 31 of the liquid supply pipeline 3, the liquid supply pump 5 is used for providing power, so as to convey the metal ion etching solution E1 in the first liquid storage tank 6 to the spraying device 2, specifically, the second liquid inlet 23 is communicated with the bracket 21, and when the liquid supply pump 5 works, the metal ion etching liquid E1 in the first liquid storage tank 6 is driven to enter the bracket 21 through the second liquid inlet 23 and then enter the nozzle 22, so as to perform spraying operation on the target T; the return line 32 is fluidly connected between the etching chamber and the first liquid storage tank 6 of the etching solution supply source 1, further, the return line 32 is fluidly connected between the second liquid outlet 24 and the first liquid inlet 8, and the return line 32 is configured to convey the metal ion etching solution E1 sprayed and etched in the spraying device 2 into the first etching tank 6, so as to realize cyclic utilization of the metal ion etching solution E1.
In this embodiment, the ion concentration adjusting device 4 is used for adjusting the concentration of the metal ions in the metal ion etching solution E1 in the first liquid storage tank 6 in real time, in order to achieve the above object, the present application specifically provides an embodiment, in which the ion concentration adjusting device 4 is disposed inside the etching solution supply source 1, and includes an oxide layer 41 and a carrier layer 42, wherein the oxidation layer 41 faces the second liquid storage tank 7 and contacts with the second ion etching liquid E2, the second liquid storage tank 7 is an independent closed solution chamber, the second ion etching solution E2 of the second liquid storage tank 7 etches the oxidation layer 41, the bearing layer 42 faces the first liquid storage tank 6 and is contacted with the metal ion etching liquid E1, the first liquid storage tank 6 is communicated with the spraying device 2, but the first reservoir 6 and the second reservoir 7 are isolated from each other by the ion concentration adjusting device 4; the oxidation layer 41 is used for performing an oxidation reaction in the second ionic etching solution E2, the carrier layer 42 is used for conducting electrons so that metal ions of the metal ionic etching solution E1 perform a reduction reaction, and the carrier layer 42 is used for carrying metal particles precipitated from the metal ionic etching solution E1.
As a preferred embodiment, in order to ensure the stability of the metal ion concentration of the metal ion etching solution E1 in the first reservoir 6, that is, in order to keep the metal ion concentration of the metal ion etching solution E1 in a low concentration state at all times, the oxidation activity of the cation element of the second ion etching solution E2 should be greater than that of the metal ion element of the metal ion etching solution E1.
In order to simplify the embodiment, the oxide layer 41 is made of a metal material, and the metal element is the same as the cation element of the second ionic etching solution E2.
The anode of the OLED in the embodiment of the present application is preferably a polycrystalline ITO/AG/polycrystalline ITO composite laminated metal film, and the corresponding target T is an ITO/AG/ITO composite laminated metal film. In one embodiment, the target T is subjected to wet etching by the etching apparatus of the present application to form an amorphous ITO/AG/amorphous ITO composite laminated metal film, and then subjected to high-temperature annealing by a high-temperature film formation process to be converted into a polycrystalline ITO/AG/polycrystalline ITO composite laminated metal film, so as to obtain the anode. The polycrystalline ITO can form a film with good compactness, the transmittance of the polycrystalline ITO is higher than that of amorphous ITO, the polycrystalline ITO has lower roughness than the amorphous ITO, the polycrystalline ITO is beneficial to increasing the reflectivity of Ag, the defect of black spots is reduced, and water, oxygen, chlorine, sulfur and the like in the air are protected to corrode the silver.
In this embodiment, the metal ion etching solution E1 in the first liquid storage tank 6 is a silver ion etching solution, and since the oxidation activity of the cation element of the second ion etching solution E2 should be greater than the oxidation activity of the metal ion element of the metal ion etching solution E1, the second ion etching solution E2 may preferably be at least one of aluminum ion, titanium ion, molybdenum ion, and copper ion, wherein the oxidation activities of aluminum, titanium, molybdenum, and copper are sequentially reduced and are all greater than the oxidation activity of silver in terms of the oxidation activity of chemical substances.
In a preferred embodiment, the metal ions in the metal ion etching solution E1 are silver ions, the cations in the second ion etching solution E2 are aluminum ions, the ion concentration adjusting device 4 is a titanium/aluminum alloy plate, the oxide layer 41 is a metal aluminum plate, and the carrier layer 42 is a metal titanium plate.
In other embodiments, the cations of the second ionic etching solution E2 may also be selected from, but not limited to, aluminum ions, for example, copper ions; and, the oxidation layer 41 and the bearing layer 42 may also be selected from Al/Ti alloy, and may also have other alloy structures, in general, the oxidation activity of the metal of the oxidation layer 41 is before the bearing layer 42, and in a specific embodiment, a person skilled in the art may obtain a desired or optimal specific embodiment according to actual experimental conditions, and is not limited specifically herein.
The application also provides an etching method applied to the etching equipment, and the etching method comprises the following steps: providing an ion concentration adjusting device 4 and a spraying device 2 which are communicated with each other, wherein the etching solution supply source 1 comprises a first liquid storage tank 6, a second liquid storage tank 7 and the ion concentration adjusting device 4, the first liquid storage tank 6 contains a metal ion etching solution E1, the second liquid storage tank 7 contains a second ion etching solution E2, the ion concentration adjusting device 4 comprises an oxidation layer 41 and a bearing layer 42 which are arranged in a stacked manner, the oxidation layer 41 is in contact with the second ion etching solution E2 and undergoes an oxidation reaction, the bearing layer 42 is in contact with the metal ion etching solution E1 and undergoes a reduction reaction to adjust the concentration of metal ions in the metal ion etching solution E1, and the bearing layer 42 is used for bearing metal particles precipitated from the metal ion etching solution E1.
As shown in fig. 2The oxidation layer 41, i.e., the aluminum plate, is slowly oxidized in the etching solution of the second ion etching solution E2 by Al(s) → Al3+ (aq)+3E-, a large amount of aluminum ions (Al) are generated in the second ionic etchant E23+)12 and electron (e)-)13, and electrons generated by the reaction (e)-)13 moving from the aluminum plate (Al)41 to the titanium plate (Ti) increases the electron density of the carrier layer 42, i.e., the Ti surface, and the silver ions (Ag) in the metal ion etching solution E1+)10 reduction reaction Ag when encountering electrons++e-→ Ag, silver (Ag) particles 11 are deposited on the Ti surface, i.e., the carrier layer 42, and adsorbed on the Ti surface, and the carrier layer 42, i.e., the titanium, effectively controls the concentration of the silver ions 10 in the metal ion etching solution E1 by playing a role of transferring charges and supporting the deposited silver particles 11.
It should be further noted that in the manufacturing process of the display substrate, a stacked Ti/Al/Ti structure is often used to manufacture a patterned conductive layer, where the patterned conductive layer includes at least one conductive layer, the material of the at least one conductive layer is Al, and the patterned conductive layer may be a signal line of the display substrate, such as a data line, or an electrode of a thin film transistor of the display substrate, such as a source electrode (S) and a drain electrode (D); because the side surface of the patterned conductive layer is exposed, the flat layer is generally adopted to wrap the exposed Al on the side surface of the patterned conductive layer, but because the flat layer is insulated, the patterned conductive layer at a part of the position needs to be electrically connected with other components, the exposed Al on the side surface of the flat layer cannot be wrapped at a part of the position; therefore, in the subsequent etching process, Al is easily etched to form holes, and a water-oxygen channel is provided, so that poor reliability of the display substrate is caused; when the display substrate is an OLED display substrate, the anode of the OLED display substrate is made of ITO/Ag/ITO, when Ag of the anode of the OLED display substrate is etched, exposed Al replaces Ag ions in the anode of the OLED display substrate with simple substance silver (Ag) particles, and when the Ag particles are washed to the surface of the anode of the OLED display substrate by a wet etching process, short circuit between the anode and the cathode is easily caused, a dark spot is formed, and the product yield of the OLED display substrate is influenced.
Referring to fig. 3, fig. 3 is a diagram illustrating a state of metal particles adsorbed on a surface of an etching member in the prior art. As shown in fig. 3, a Ti/Al/Ti laminated structure is adopted to manufacture a source drain layer 90(SD), the source drain layer 90 is disposed on a substrate 100, the source drain layer 90 is a Ti/Al/Ti laminated structure, that is, the source drain layer 90 includes a first Ti layer 91, an Al layer 92 and a second Ti layer 93 which are laminated, and an exposed area of the source drain layer 90 is adsorbed by silver particles 11.
Referring to fig. 4, fig. 4 is a diagram illustrating an improved state of metal particles on the surface of an etching member according to an embodiment of the present disclosure. As shown in fig. 4, by using the etching apparatus and the etching method provided in the embodiment of the present application, the concentration of the silver ions in the metal ion etching solution E1 is reduced and kept stable, so that it can be avoided that the Al exposed on the surface of the source/drain electrode layer 90 shown in fig. 3 replaces the Ag ions in the anode of the OLED display substrate with simple substance Ag particles, and the exposed area on the surface of the source/drain electrode layer 90 has no silver particles for adsorption, thereby preventing short circuit between the anode and the cathode, and improving the product yield of the OLED display substrate.
The etching equipment provided by the embodiment of the application, by providing an etching solution supply source 1 and a spraying device 2 which are communicated with each other, the etching solution supply source 1 comprises a first liquid storage tank 6, a second liquid storage tank 7 and an ion concentration adjusting device 4, wherein the first liquid storage tank 6 contains a metal ion etching solution E1, the second liquid storage tank 7 contains a second ion etching solution E2, and the ion concentration adjusting device 4 generates electrons to adjust the concentration of metal ions in the metal ion etching solution E1; the ion concentration adjusting device 4 comprises an oxidation layer 41 and a bearing layer 42 which are arranged in a stacked manner, the oxidation layer 41 faces the second liquid storage tank 7 and is in contact with the second ion etching solution E2 to generate an oxidation reaction, the metal ion etching solution E1 in the first liquid storage tank 6 generates a reduction reaction to adjust the concentration of metal ions in the metal ion etching solution E1, and the bearing layer 42 is used for bearing precipitated metal particles; and the metal ions in the metal ion etching solution E1 are silver ions 10, the cations in the second ion etching solution E2 are aluminum ions 12, the oxidation layer 41 is an aluminum plate, and the bearing layer 42 is a titanium plate. The embodiment of the application is used for adjusting the content of the silver ions 10 in the metal ion etching solution E1 through the etching equipment and the etching method, so that the stability of the content of the silver ions 10 can be maintained, the service life of the etching solution is prolonged, and the cost of the etching solution is reduced, thereby solving the technical problem that the cost of the etching solution is high due to the fact that metal particles are precipitated from metal ions to influence the etching effect in the process of etching a metal film layer by using the existing etching device and method.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The etching apparatus and the etching method provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the embodiments is only used to help understanding the technical solutions and core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. An etching apparatus having an etching liquid supply source, characterized in that,
the etching liquid supply source comprises a first liquid storage tank, a second liquid storage tank and an ion concentration adjusting device arranged between the first liquid storage tank and the second liquid storage tank; the first liquid storage tank contains metal ion etching liquid, and the ion concentration adjusting device generates electrons to adjust the concentration of metal ions in the metal ion etching liquid.
2. The etching apparatus according to claim 1, wherein the ion concentration adjusting device comprises a carrier layer and an oxide layer stacked together, wherein the carrier layer faces the first reservoir and contacts the metal ion etching solution, and the oxide layer faces the second reservoir and contacts the second ion etching solution contained in the second reservoir.
3. The etching apparatus according to claim 2, wherein the oxide layer of the ion concentration adjusting means is oxidizable in the second ion etching solution to generate electrons; the bearing layer is used for bearing the metal particles separated out by the metal ion etching solution.
4. The etching apparatus according to claim 3, wherein an oxidation activity of a cation element of the second ionic etching liquid is greater than an oxidation activity of a metal ion element of the metal ionic etching liquid.
5. The etching apparatus according to claim 4, wherein a material of the oxide layer is a metal, and a metal element of the oxide layer is the same as a cation element of the second ionic etching liquid.
6. The etching apparatus according to claim 5, wherein the bearing layer of the ion concentration adjusting means is a metallic titanium plate, and the oxide layer of the ion concentration adjusting means is a metallic aluminum plate.
7. The etching apparatus of claim 1, further comprising a spray device in communication with the first reservoir of the etching liquid supply source to spray the metal ion etching liquid to at least one target.
8. The etching apparatus of claim 1, further comprising a liquid supply line for fluidly connecting the spray device and the first reservoir of the etching liquid supply source.
9. The etching apparatus of claim 8, further comprising an etching chamber for performing an etching process, wherein the spray device is disposed within the etching chamber.
10. The etching apparatus of claim 9, further comprising a return line fluidly connecting the etching chamber and the first reservoir of the etching liquid supply.
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| CN202011109694.4A CN112289962B (en) | 2020-10-16 | 2020-10-16 | Etching apparatus |
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