CN112285381B - MEMS inertial switch with adjustable threshold - Google Patents
MEMS inertial switch with adjustable threshold Download PDFInfo
- Publication number
- CN112285381B CN112285381B CN202011207970.0A CN202011207970A CN112285381B CN 112285381 B CN112285381 B CN 112285381B CN 202011207970 A CN202011207970 A CN 202011207970A CN 112285381 B CN112285381 B CN 112285381B
- Authority
- CN
- China
- Prior art keywords
- electrode
- induction
- inner ring
- supporting device
- outer ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/105—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by magnetically sensitive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/90—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
Abstract
The invention provides a MEMS inertial switch with adjustable threshold, comprising: the induction upper electrode is configured to move towards the direction of the induction lower electrode under the action of inertia and form a pulse induction signal when contacting with the induction lower electrode; the induction lower electrode is fixedly arranged with the shell and forms a pulse induction signal when contacting with the induction upper electrode; the electromagnetic attraction device is configured to generate a magnetic field after current is introduced, the magnetic field generates acting force towards the induction lower electrode on the induction upper electrode, and the strength and the direction of the magnetic field change along with the change of the introduced current.
Description
Technical Field
The invention relates to the technical field of inertial switches, in particular to an MEMS inertial switch with an adjustable threshold value.
Background
In the fields of aerospace, automobile industry, inertial navigation, ammunition safety and control systems, automobile detection, torpedo control and the like, various new technologies are continuously emerging, and various detection control equipment is developed towards miniaturization, low energy consumption and intellectualization. In this situation, it is desirable to use sensor elements and actuator elements which both meet the requirements of miniaturization and provide reliable stability. Micro-inertial elements based on MEMS (Micro-Electro-Mechanical systems) technology have been developed for the above reasons, and fully take advantage of their compactness, flexibility and intelligence.
A Micro-Electro Mechanical System (MEMS) is an integrated System that integrates electronic and Mechanical devices by using bulk silicon etching, large-scale integrated circuit, etc. techniques to form an integrated System including information sensing, data processing, execution mechanisms and other Micro devices, and has the characteristics of miniaturization, integration, multidisciplinary crossing, mass production, etc. The existing mechanical switch produced by the MEMS process is typically characterized in that external power supply is not needed, the mechanical switch is in a turn-off state in a normal state, and signals are conducted through inertial collision contact of an internal mechanical structure during working.
The inertial switch, also called g value switch, threshold value sensor, etc., integrates sensing and execution, is used for sensing acceleration signal, is a precise inertial device for executing switch action and triggering electric signal under the action of acceleration exceeding threshold value, and has the distinct characteristics of simple structure, small volume, light weight, etc.
The structure of the existing inertia switch determines that the traditional mechanical inertia switch or the passive inertia switch based on the MEMS technology belongs to the category of the passive inertia switch, and the inertia switch can only adopt qualitative detection conclusion to judge and obtain the acceleration or the acceleration direction and cannot quantitatively analyze the value of the acceleration.
Disclosure of Invention
The invention aims to provide an MEMS inertial switch with an adjustable threshold value, which aims to solve the problem that the existing MEMS inertial switch cannot quantitatively analyze the value of acceleration.
In order to solve the above technical problem, the present invention provides an MEMS inertial switch with an adjustable threshold, including:
the induction upper electrode is configured to move towards the direction of the induction lower electrode under the action of inertia and form a pulse induction signal when contacting with the induction lower electrode;
the induction lower electrode is fixedly arranged with the shell and forms a pulse induction signal when contacting with the induction upper electrode;
the electromagnetic attraction device is configured to generate a magnetic field after current is introduced, the magnetic field generates acting force towards the induction lower electrode on the induction upper electrode, and the strength and the direction of the magnetic field change along with the change of the introduced current.
Optionally, in the MEMS inertial switch with adjustable threshold, the housing includes an insulating substrate.
Optionally, in the MEMS inertial switch with an adjustable threshold, the sensing lower electrode includes an outer ring supporting device and an inner ring fixed electrode, where:
the inner ring fixed electrode is enclosed in the outer ring supporting device, and a gap is formed between the inner ring fixed electrode and the outer ring supporting device;
the top surface of the outer ring supporting device is parallel to the insulating substrate, and the first pin electrode is led out from the outer side surface of the outer ring supporting device;
the top surface of the inner ring fixed electrode is parallel to the insulating substrate, and the second pin electrode is led out from the outer side surface of the inner ring fixed electrode;
the outer ring supporting device is in a ring shape with an opening, and the second pin electrode extends to the outer side of the ring of the outer ring supporting device from the opening of the outer ring supporting device.
Optionally, in the MEMS inertial switch with an adjustable threshold, the electromagnetic attraction device includes a magnetism generating coil;
the magnet generating coil includes a plurality of concentric annular conductive members each enclosed in the inner ring fixed electrode with a gap therebetween;
the top surface of the magnet generating coil is parallel to the insulating substrate, and the height of the magnet generating coil relative to the insulating substrate is smaller than that of the inner ring fixed electrode relative to the insulating substrate.
Optionally, in the MEMS inertial switch with an adjustable threshold, the electromagnetic attraction device further includes a third pin electrode and a fourth pin electrode;
the height of the third pin electrode and the height of the fourth pin electrode are equal to the height of the magnetic generating coil;
the plurality of concentric annular conductive components are connected in parallel between the third pin electrode and the fourth pin electrode after surrounding one circle;
the inner ring fixed electrode is in a ring shape with an opening, and the center line of the opening of the outer ring supporting device is aligned with the center line of the opening of the inner ring fixed electrode;
the third pin electrode and the fourth pin electrode extend from the opening of the inner ring fixed electrode to the ring outer side of the inner ring fixed electrode, and extend from the opening of the outer ring supporting device to the ring outer side of the outer ring supporting device.
Optionally, in the MEMS inertial switch with an adjustable threshold, the third pin electrode and the fourth pin electrode include a connection component, an extraction component, and an electrode component, where:
the connecting part is positioned in the ring of the inner ring fixed electrode and is connected with the plurality of concentric ring-shaped conductive parts, and the width of one end, close to the inner ring fixed electrode, of the connecting part is larger than that of one end, far away from the inner ring fixed electrode, of the connecting part;
the leading-out part is in a slender rod shape and is connected with the connecting part and the electrode part, and the electrode part is positioned outside the ring of the outer ring supporting device;
the leading-out parts of the first pin electrode, the second pin electrode, the third pin electrode and the fourth pin electrode are all parallel.
Optionally, in the MEMS inertial switch with an adjustable threshold, the outer ring supporting device, the inner ring fixed electrode, and the plurality of concentric ring-shaped conductive components are all fixed on the insulating substrate.
Optionally, in the MEMS inertial switch with an adjustable threshold, the sensing upper electrode includes a wafer moving electrode, a spring fixing support, and a connected serpentine spring, where:
the wafer moving electrode is connected with the connected serpentine spring, and the connected serpentine spring is connected with the spring fixing support so as to suspend the wafer moving electrode above the magnetism generating coil and the inner ring fixing electrode;
the shape, the diameter and the width of the spring fixing support are the same as those of the outer ring supporting device, and the spring fixing support is fixed on the outer ring supporting device.
Optionally, in the MEMS inertial switch with an adjustable threshold, the first pin electrode is fed with an induction signal, and a coupling path of the induction signal is composed of an outer ring support device, a spring fixing support, a connected serpentine spring, and a wafer moving electrode;
when the induction upper electrode is contacted with the induction lower electrode instantaneously, an induction signal is coupled to the inner ring fixed electrode and the second pin electrode by the wafer moving electrode, and a pulse induction signal captured by the second pin electrode is sent to the rear-stage detection circuit.
Optionally, in the MEMS inertial switch with an adjustable threshold, the radius of the wafer moving electrode is 150 to 3000 microns, and the height of the wafer moving electrode is 10 to 450 microns;
the radius of the outermost circle of the concentric annular conductive parts is 200-3000 micrometers, the width of each concentric annular conductive part is 3-30 micrometers, the thickness of each concentric annular conductive part is 2-30 micrometers, and the number of the concentric annular conductive parts is 10-1000;
the line width of the connected serpentine spring is 6-90 microns, the thickness of the connected serpentine spring is 6-90 microns, and the inner diameter of a semicircle at a corner of the connected serpentine spring is 10-100 microns;
the insulating substrate is made of quartz or glass, and the thickness of the insulating substrate is 0.1-2 mm;
the spring fixing support is formed by electroplating metal, the radius of an outer ring of the spring fixing support is 200-3300 micrometers, the ring width of the spring fixing support is 20-1000 micrometers, and the thickness of the spring fixing support is 15-300 micrometers.
In the MEMS inertial switch with the adjustable threshold value, the induction upper electrode moves towards the induction lower electrode under the action of inertia to form a pulse induction signal when contacting with the induction lower electrode, the pulse induction signal is formed when the induction lower electrode contacts with the induction upper electrode, the electromagnetic attraction device generates a magnetic field after being electrified, the magnetic field generates acting force towards the induction lower electrode on the induction upper electrode, the strength and the direction of the magnetic field change along with the change of the electrified current, the threshold acceleration of the inertial switch is adjusted by adjusting the magnitude of the current passing through the electromagnetic attraction device to generate magnetic force with different magnitudes, and in addition, the attraction effect can be realized when the current is larger, so that the signal capture of the inertial switch is more stable and reliable.
The threshold of the existing inertia switch is not easy to be accurately controlled, but the invention adopts a very simple structure and control mode, adds the structure and method for controlling the threshold under the condition of not increasing the structure size, changing the outer contour and increasing the complexity of the inertia switch, realizes the adjustable threshold of the inertia switch, and has the effects of low cost and easy realization.
Drawings
FIG. 1 is a general schematic diagram of an MEMS inertial switch with adjustable threshold according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an inductive bottom electrode of an MEMS inertial switch with adjustable threshold according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an inductive upper electrode of a MEMS inertial switch with adjustable threshold according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a threshold adjustable MEMS inertia switch magnetizing coil according to one embodiment of the present invention;
FIG. 5 is a schematic diagram of an MEMS inertial switch conjoined serpentine spring with an adjustable threshold value according to an embodiment of the present invention;
shown in the figure: 10-an inductive upper electrode; 11-a wafer moving electrode; 12-a spring fixing bracket; 13-one-piece serpentine spring; 20-an inductive bottom electrode; 21-outer ring support means; 22-inner ring fixed electrode; 23-a first pin electrode; 24-a second pin electrode; 30-an insulating substrate; 40-a magnetism generating coil; 41-concentric ring-shaped conductive members; 42-third pin electrode; 43-fourth lead electrode.
Detailed Description
The MEMS inertial switch with adjustable threshold value according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Furthermore, features from different embodiments of the invention may be combined with each other, unless otherwise indicated. For example, a feature of the second embodiment may be substituted for a corresponding or functionally equivalent or similar feature of the first embodiment, and the resulting embodiments are likewise within the scope of the disclosure or recitation of the present application.
The core idea of the invention is to provide an MEMS inertial switch with adjustable threshold value, so as to solve the problem that the existing MEMS inertial switch cannot quantitatively analyze the value of acceleration.
To achieve the above idea, the present invention provides a MEMS inertial switch with an adjustable threshold, including: the induction upper electrode is configured to move towards the direction of the induction lower electrode under the action of inertia and form a pulse induction signal when contacting with the induction lower electrode; the induction lower electrode is fixedly arranged with the shell and forms a pulse induction signal when contacting with the induction upper electrode; the electromagnetic attraction device is configured to generate a magnetic field after current is introduced, the magnetic field generates acting force towards the induction lower electrode on the induction upper electrode, and the strength and the direction of the magnetic field change along with the change of the introduced current.
The present embodiment provides a threshold-adjustable MEMS inertial switch, as shown in fig. 1 to 5, including: the induction upper electrode 10 is configured to move towards the induction lower electrode 20 under the action of inertia and form a pulse induction signal when contacting with the induction lower electrode 20; an induction lower electrode 20 configured to be fixedly disposed with the housing, and forming a pulse induction signal when contacting the induction upper electrode 10; the electromagnetic attraction device is configured to generate a magnetic field after current is introduced, the magnetic field generates acting force towards the induction lower electrode 20 on the induction upper electrode 10, and the strength and the direction of the magnetic field change along with the change of the introduced current.
As shown in fig. 2, in the MEMS inertial switch with adjustable threshold, the housing includes an insulating substrate 30. In the MEMS inertial switch with adjustable threshold, the sensing bottom electrode 20 includes an outer ring supporting device 21 and an inner ring fixed electrode 22, wherein: the inner ring fixed electrode 22 is enclosed in the outer ring support 21, and a gap is formed between the inner ring fixed electrode 22 and the outer ring support 21 for mutual insulation; the top surface of the outer ring supporting device 21 is parallel to the insulating substrate 30, and the first pin electrode 23 is led out from the outer side surface of the outer ring supporting device 21; the top surface of the inner ring fixed electrode 22 is parallel to the insulating substrate 30, and the second pin electrode 24 is led out from the outer side surface of the inner ring fixed electrode 22; the outer ring support device 21 is ring-shaped with an opening, and the second pin electrode 24 extends from the opening of the outer ring support device 21 to the outside of the ring of the outer ring support device 21.
Further, in the MEMS inertial switch with adjustable threshold, the electromagnetic attraction device includes a magnetism generating coil 40; the magnetism generating coil 40 includes a plurality of concentric annular conductive members 41, the plurality of concentric annular conductive members 41 being each enclosed in the inner ring fixed electrode 22, the plurality of concentric annular conductive members 41 having gaps therebetween to be insulated from each other; the top surface of the magnet generating coil 40 is parallel to the insulating substrate 30, and the height of the magnet generating coil 40 relative to the insulating substrate 30 is smaller than the height of the inner ring fixed electrode 22 relative to the insulating substrate 30, so that the disc moving electrode 11 is ensured to preferentially touch the inner ring fixed electrode 22 and not touch the magnet generating coil 40 to cause the magnet generating coil 40 to fail. In the MEMS inertial switch with adjustable threshold, the electromagnetic attraction device further includes a third pin electrode 42 and a fourth pin electrode 43; the height of the third lead electrode 42 and the fourth lead electrode 43 is equal to the height of the magnetism generating coil 40; the plurality of concentric annular conductive components 41 are connected in parallel between the third pin electrode 42 and the fourth pin electrode 43 after being wound by one circle, so that the whole device cannot work even if a certain concentric annular conductive component 41 is damaged, and the reliability of the device is improved. The inner ring fixed electrode 22 is in a ring shape with an opening, and the center line of the opening of the outer ring supporting device 21 is aligned with the center line of the opening of the inner ring fixed electrode 22; the third pin electrode 42 and the fourth pin electrode 43 extend from the opening of the inner ring fixed electrode 22 to the outside of the ring of the inner ring fixed electrode 22, and extend from the opening of the outer ring support 21 to the outside of the ring of the outer ring support 21.
As shown in fig. 4, in the MEMS inertial switch with adjustable threshold, the third pin electrode 42 and the fourth pin electrode 43 include a connecting member 44, an extraction member 45, and an electrode member 46, where: the connecting part 44 is positioned in the ring of the inner ring fixed electrode 22 and connects the plurality of concentric ring-shaped conductive parts 41, the width of one end of the connecting part 44 close to the inner ring fixed electrode 22 is larger than that of one end far away from the inner ring fixed electrode 22, namely, the energizing wire led out from the magnet generating coil 40 is gradually widened to adapt to the total current which is continuously gathered from the plurality of concentric ring-shaped conductive parts 41 and causes gradual increase; the leading-out part 45 is in a shape of a slender rod and is connected with the connecting part 44 and the electrode part 46, and the electrode part 46 is positioned outside the ring of the outer ring supporting device 21; the lead parts 45 of the first pin electrode 23, the second pin electrode 24, the third pin electrode 42 and the fourth pin electrode 43 are all parallel.
Specifically, in the MEMS inertial switch with an adjustable threshold, the outer ring support device 21, the inner ring fixed electrode 22, and the plurality of concentric ring-shaped conductive members 41 are all fixed on the insulating substrate 30. As shown in fig. 3 and 5, in the MEMS inertial switch with an adjustable threshold, the sensing upper electrode 10 includes a wafer moving electrode 11, a spring fixing support 12, and a connected serpentine spring 13, where: the wafer moving electrode 11 is connected with the connected serpentine spring 13, and the connected serpentine spring 13 is connected with the spring fixing support 12, so that the wafer moving electrode 11 is suspended above the magnetism generating coil 40 and the inner ring fixing electrode 22; the shape, diameter and width of the spring fixing bracket 12 are the same as those of the outer ring supporting device 21, and the spring fixing bracket is fixed on the outer ring supporting device 21; in the MEMS inertial switch with the adjustable threshold, a first pin electrode 23 is introduced with an induction signal, and a coupling path of the induction signal consists of an outer ring supporting device 21, a spring fixing support 12, a connected serpentine spring 13 and a wafer moving electrode 11; when the sensing upper electrode 10 contacts the sensing lower electrode 20, a sensing signal is coupled to the inner ring fixed electrode 22 and the second pin electrode 24 by the wafer moving electrode 11, and the sensing signal captured by the second pin electrode 24 is sent to the rear-stage detection circuit.
In one embodiment of the invention, in the MEMS inertial switch with adjustable threshold, the radius of the wafer moving electrode 11 is 150 to 3000 microns, and the height of the wafer moving electrode 11 is 10 to 450 microns; the radius of the outermost circle of the concentric annular conductive components 41 is 200-3000 micrometers, the width of each concentric annular conductive component 41 is 3-30um, the thickness of each concentric annular conductive component 41 is 2-30um, and the number of the concentric annular conductive components 41 is 10-1000; the line width of the connected serpentine spring 13 is 6-90 microns, the thickness of the connected serpentine spring 13 is 6-90 microns, and the inner diameter of a semicircle at a corner of the connected serpentine spring 13 is 10-100 microns; the insulating substrate 30 is made of quartz or glass, and the thickness of the insulating substrate 30 is 0.1-2 mm; the spring fixing support 12 is formed by electroplating metal, the radius of an outer ring of the spring fixing support is 200-3300 micrometers, the ring width of the spring fixing support 12 is 20-1000 micrometers, and the thickness of the spring fixing support 12 is 15-300 micrometers.
In the MEMS inertial switch with the adjustable threshold value, the induction upper electrode 10 moves towards the induction lower electrode 20 under the action of inertia to form a pulse induction signal when contacting with the induction lower electrode 20, the pulse induction signal is formed when the induction lower electrode 20 contacts with the induction upper electrode 10, the electromagnetic attraction device generates a magnetic field after current is introduced, the magnetic field generates acting force towards the induction lower electrode 20 on the induction upper electrode 10, the strength and the direction of the magnetic field change along with the change of the introduced current, the generation of magnetic force with different sizes by adjusting the size of the current passing through the electromagnetic attraction device is realized, the threshold acceleration of the inertial switch is adjusted, in addition, the attraction effect can be realized when the current is larger, and the signal capture of the inertial switch can be more stable and reliable.
The threshold of the existing inertia switch is not easy to be accurately controlled, but the invention adopts a very simple structure and control mode, adds the structure and method for controlling the threshold under the condition of not increasing the structure size, changing the outer contour and increasing the complexity of the inertia switch, realizes the adjustable threshold of the inertia switch, and has the effects of low cost and easy realization.
When the wafer moving electrode 11 senses the vibration acceleration effect exceeding the threshold value along the sensing direction, the wafer moving electrode 11 moves towards the inner ring fixed electrode 22 and is subjected to the magnetic force effect related to the current passing through the magnet generating coil 40, and finally the wafer moving electrode collides and contacts with the inner ring fixed electrode 22, so that the conduction of an external circuit is realized. By adjusting the magnitude of the current through the magnet-generating coil 40, different magnitudes of magnetic force are generated, thereby adjusting the threshold acceleration of the inertial switch. The effect of attraction can be realized when the current is large.
The MEMS inertial switch with the adjustable threshold value is composed of nickel, a first pin electrode 23 is connected with high voltage, for example, 5v voltage, when the MEMS inertial switch with the adjustable threshold value is subjected to acceleration, a wafer moving electrode 11 collides with a second pin electrode 24 connected with an inner ring fixed electrode 22, the first pin electrode 23 is conducted with the second pin electrode 24, and the second pin electrode 24 outputs the high voltage.
The middle two electrodes are used to pass current to the magnetic producing coil 40, one input current and one output current. If a current is input from the left side, a clockwise current flows in the magnet generating coil 40, the circular current generates a magnetic field, the magnetic field is stronger when the current is larger, namely the magnet generating coil 40 can be equivalent to a magnet when the current is applied, and since the upper wafer moving electrode 11 is made of nickel, the nickel is attracted by the magnet like the iron, and the wafer moving electrode 11 is attracted downwards.
In summary, the above embodiments describe the different configurations of the MEMS inertial switch with adjustable threshold in detail, and it goes without saying that the present invention includes but is not limited to the configurations listed in the above embodiments, and any modifications based on the configurations provided in the above embodiments are within the scope of the present invention. One skilled in the art can take the contents of the above embodiments to take a counter-measure.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (7)
1. An adjustable threshold MEMS inertial switch comprising:
the induction upper electrode is configured to move towards the direction of the induction lower electrode under the action of inertia and form a pulse induction signal when contacting with the induction lower electrode;
the induction lower electrode is fixedly arranged with the shell and forms a pulse induction signal when contacting with the induction upper electrode;
the electromagnetic attraction device is configured to generate a magnetic field after current is introduced, the magnetic field generates acting force towards the induction lower electrode on the induction upper electrode, and the strength and the direction of the magnetic field change along with the change of the introduced current;
the electromagnetic attraction device comprises a magnetism generating coil;
the magnetism generating coil comprises a plurality of concentric annular conductive members with gaps therebetween;
the shell comprises an insulating substrate, and the top surface of the magnet generating coil is parallel to the insulating substrate;
the induction bottom electrode comprises an outer ring supporting device and an inner ring fixed electrode, wherein:
the inner ring fixed electrode is enclosed in the outer ring supporting device, and a gap is formed between the inner ring fixed electrode and the outer ring supporting device;
the top surface of the outer ring supporting device is parallel to the insulating substrate, and the first pin electrode is led out from the outer side surface of the outer ring supporting device;
the top surface of the inner ring fixed electrode is parallel to the insulating substrate, and the second pin electrode is led out from the outer side surface of the inner ring fixed electrode;
the outer ring supporting device is in a ring shape with an opening, and the second pin electrode extends to the outer side of the ring of the outer ring supporting device from the opening of the outer ring supporting device;
the plurality of concentric annular conductive members are each enclosed in the inner ring fixed electrode;
the height of the magnetism generating coil relative to the insulating substrate is smaller than the height of the inner ring fixed electrode relative to the insulating substrate.
2. The tunable MEMS inertial switch of claim 1, wherein the electromagnetic attraction means further comprises a third pin electrode and a fourth pin electrode;
the height of the third pin electrode and the height of the fourth pin electrode are equal to the height of the magnetic generating coil;
the plurality of concentric annular conductive components are connected in parallel between the third pin electrode and the fourth pin electrode after surrounding one circle;
the inner ring fixed electrode is in a ring shape with an opening, and the center line of the opening of the outer ring supporting device is aligned with the center line of the opening of the inner ring fixed electrode;
the third pin electrode and the fourth pin electrode extend from the opening of the inner ring fixed electrode to the ring outer side of the inner ring fixed electrode, and extend from the opening of the outer ring supporting device to the ring outer side of the outer ring supporting device.
3. The tunable MEMS inertial switch of claim 2, wherein the third pin electrode and the fourth pin electrode include a connection part, an extraction part, and an electrode part, wherein:
the connecting part is positioned in the ring of the inner ring fixed electrode and is connected with the plurality of concentric ring-shaped conductive parts, and the width of one end, close to the inner ring fixed electrode, of the connecting part is larger than that of one end, far away from the inner ring fixed electrode, of the connecting part;
the leading-out part is in a slender rod shape and is connected with the connecting part and the electrode part, and the electrode part is positioned outside the ring of the outer ring supporting device;
the leading-out parts of the first pin electrode, the second pin electrode, the third pin electrode and the fourth pin electrode are all parallel.
4. The tunable MEMS inertial switch of claim 1 wherein the outer ring support means, inner ring fixed electrode and the plurality of concentric ring shaped conductive members are fixed to the insulating substrate.
5. The MEMS inertial switch with adjustable threshold value according to claim 4, wherein the sensing upper electrode comprises a disk moving electrode, a spring fixing support and a connected serpentine spring, wherein:
the wafer moving electrode is connected with the connected serpentine spring, and the connected serpentine spring is connected with the spring fixing support so as to suspend the wafer moving electrode above the magnetism generating coil and the inner ring fixing electrode;
the shape, the diameter and the width of the spring fixing support are the same as those of the outer ring supporting device, and the spring fixing support is fixed on the outer ring supporting device.
6. The MEMS inertial switch with adjustable threshold value according to claim 5, wherein the first pin electrode is connected with a sensing signal, and a coupling path of the sensing signal is composed of an outer ring supporting device, a spring fixing support, a conjoined serpentine spring and a wafer moving electrode;
when the induction upper electrode is contacted with the induction lower electrode instantaneously, an induction signal is coupled to the inner ring fixed electrode and the second pin electrode by the wafer moving electrode, and a pulse induction signal captured by the second pin electrode is sent to the rear-stage detection circuit.
7. The MEMS inertial switch with adjustable threshold value of claim 5, wherein the radius of the wafer moving electrode is 150-3000 microns, and the height of the wafer moving electrode is 10-450 microns;
the radius of the outermost circle of the concentric annular conductive parts is 200-3000 micrometers, the width of each concentric annular conductive part is 3-30 micrometers, the thickness of each concentric annular conductive part is 2-30 micrometers, and the number of the concentric annular conductive parts is 10-1000;
the line width of the connected serpentine spring is 6-90 microns, the thickness of the connected serpentine spring is 6-90 microns, and the inner diameter of a semicircle at a corner of the connected serpentine spring is 10-100 microns;
the insulating substrate is made of quartz or glass, and the thickness of the insulating substrate is 0.1-2 mm;
the spring fixing support is formed by electroplating metal, the radius of an outer ring of the spring fixing support is 200-3300 micrometers, the ring width of the spring fixing support is 20-1000 micrometers, and the thickness of the spring fixing support is 15-300 micrometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011207970.0A CN112285381B (en) | 2020-11-03 | 2020-11-03 | MEMS inertial switch with adjustable threshold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011207970.0A CN112285381B (en) | 2020-11-03 | 2020-11-03 | MEMS inertial switch with adjustable threshold |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112285381A CN112285381A (en) | 2021-01-29 |
| CN112285381B true CN112285381B (en) | 2021-09-24 |
Family
ID=74351208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011207970.0A Active CN112285381B (en) | 2020-11-03 | 2020-11-03 | MEMS inertial switch with adjustable threshold |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112285381B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161197B (en) * | 2021-04-12 | 2022-04-26 | 四川九洲电器集团有限责任公司 | Universal inertial switch with adjustable threshold value and closing method thereof |
| CN114018729B (en) * | 2021-11-02 | 2022-05-17 | 上海交通大学 | Micro-particle accelerating device based on MEMS technology |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303366A (en) * | 2007-05-11 | 2008-11-12 | 中国科学院上海微系统与信息技术研究所 | Acceleration switch sensor with adjustable threshold value of silicon base band locking function and manufacturing method thereof |
| JP2009134993A (en) * | 2007-11-30 | 2009-06-18 | Tokai Rika Co Ltd | Mems switch |
| CN103151219A (en) * | 2011-12-07 | 2013-06-12 | 大连理工大学 | Three-stable-state bi-directional crash sensor with threshold values adjustable |
| CN104103454A (en) * | 2014-07-28 | 2014-10-15 | 东南大学 | Magnetic suspension micromachine switch |
| CN107919254A (en) * | 2017-10-30 | 2018-04-17 | 上海交通大学 | A kind of electrostatic locking inertia switch with flexible array contact |
| CN108007556A (en) * | 2017-12-27 | 2018-05-08 | 曲靖师范学院 | A kind of zigzag tread patterns threshold sensor by the use of spring structure as fixed electrode contacts |
| CN108630489A (en) * | 2018-05-31 | 2018-10-09 | 湖北三江航天红林探控有限公司 | A kind of locking type inertia switch |
| CN108630490A (en) * | 2018-05-31 | 2018-10-09 | 湖北三江航天红林探控有限公司 | A kind of miniature universal Inertial Closing Device |
| CN109273326A (en) * | 2017-07-17 | 2019-01-25 | 亚德诺半导体集团 | The microelectronic mechanical switch of electromagnetic drive |
| CN109360767A (en) * | 2018-12-06 | 2019-02-19 | 北京智芯传感科技有限公司 | It is a kind of that micro-impulse breaker and preparation method thereof is longitudinally connected |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130071040A (en) * | 2011-12-20 | 2013-06-28 | 삼성전기주식회사 | Inertial sensor |
| CN106024507B (en) * | 2016-07-12 | 2018-12-18 | 上海交通大学 | A kind of electrostatic locks the micro-mechanical inertia switch of vertical sensitivity |
| CN106908718A (en) * | 2017-01-18 | 2017-06-30 | 沈阳理工大学 | The test system of threshold value tunable mems inertia switch |
-
2020
- 2020-11-03 CN CN202011207970.0A patent/CN112285381B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303366A (en) * | 2007-05-11 | 2008-11-12 | 中国科学院上海微系统与信息技术研究所 | Acceleration switch sensor with adjustable threshold value of silicon base band locking function and manufacturing method thereof |
| JP2009134993A (en) * | 2007-11-30 | 2009-06-18 | Tokai Rika Co Ltd | Mems switch |
| CN103151219A (en) * | 2011-12-07 | 2013-06-12 | 大连理工大学 | Three-stable-state bi-directional crash sensor with threshold values adjustable |
| CN104103454A (en) * | 2014-07-28 | 2014-10-15 | 东南大学 | Magnetic suspension micromachine switch |
| CN109273326A (en) * | 2017-07-17 | 2019-01-25 | 亚德诺半导体集团 | The microelectronic mechanical switch of electromagnetic drive |
| CN107919254A (en) * | 2017-10-30 | 2018-04-17 | 上海交通大学 | A kind of electrostatic locking inertia switch with flexible array contact |
| CN108007556A (en) * | 2017-12-27 | 2018-05-08 | 曲靖师范学院 | A kind of zigzag tread patterns threshold sensor by the use of spring structure as fixed electrode contacts |
| CN108630489A (en) * | 2018-05-31 | 2018-10-09 | 湖北三江航天红林探控有限公司 | A kind of locking type inertia switch |
| CN108630490A (en) * | 2018-05-31 | 2018-10-09 | 湖北三江航天红林探控有限公司 | A kind of miniature universal Inertial Closing Device |
| CN109360767A (en) * | 2018-12-06 | 2019-02-19 | 北京智芯传感科技有限公司 | It is a kind of that micro-impulse breaker and preparation method thereof is longitudinally connected |
Non-Patent Citations (4)
| Title |
|---|
| A Heterogeneous Integrated MEMS Inertial Switch With Compliant Cantilevers Fixed Electrode and Electrostatic Locking to Realize Stable On-State;Xiaojing Zhang et al.;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20191230;第28卷(第6期);第977-986页 * |
| 基于全面析因试验设计的永磁微加速度开关接触可靠性分析;朱应敏等;《中国机械工程》;20080228;第19卷(第4期);第543-546页 * |
| 通过可动触点延长接触时间的新型微冲击开关;蔡豪刚等;《振动与冲击》;20090730;第28卷(第7期);第147-152、219页 * |
| 阈值可调的微机电惯性开关;刘双杰等;《中国惯性技术学报》;20140830;第22卷(第4期);第543-546页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112285381A (en) | 2021-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112285381B (en) | MEMS inertial switch with adjustable threshold | |
| Taylor et al. | Fully integrated magnetically actuated micromachined relays | |
| Hosaka et al. | Electromagnetic microrelays: concepts and fundamental characteristics | |
| KR100298254B1 (en) | Magnetic relay system and method for microfabrication manufacturing B | |
| Wright et al. | A large-force, fully-integrated MEMS magnetic actuator | |
| Taylor et al. | Integrated magnetic microrelays: normally open, normally closed, and multi-pole devices | |
| CN102674234A (en) | Sensor with energy-harvesting device | |
| Zhanwen et al. | A novel MEMS omnidirectional inertial switch with flexible electrodes | |
| JP2010169681A (en) | System and method for increased magnetic flux density d'arsonval mems accelerometer | |
| Williams et al. | Microfabrication of an electromagnetic power relay using SU-8 based UV-LIGA technology | |
| JP2015505663A (en) | Energy harvesting method and apparatus using intrinsic voltage difference between metal joints | |
| CN104143473A (en) | Acceleration switch and control method of acceleration switch | |
| CN101699604B (en) | Normally closed micro-mechanical inertia electrical switch | |
| CN103311052A (en) | Directly-operated permanent magnet-contained T armature structure | |
| JP2006179252A (en) | Switch device | |
| CN101419868B (en) | Micro mechanical latching switch device | |
| US20040008099A1 (en) | High cycle MEMS device | |
| CN103151219A (en) | Three-stable-state bi-directional crash sensor with threshold values adjustable | |
| KR101915048B1 (en) | Hybrid generator using triboelectric type and electromagnetic type based on ferromagnetic nanoparticle and operating method thereof | |
| JP4718931B2 (en) | Internal switch based on MEMS | |
| CN104036915A (en) | High-frequency acting electromagnet with state detection function | |
| CN104914273B (en) | For detecting the sensor of three-dimensional acceleration | |
| Chen et al. | Fabrication and characterization of a low-g inertial microswitch with flexible contact point and limit-block constraints | |
| CN107919254B (en) | Electrostatic locking inertial switch with flexible array contact | |
| Pawinanto et al. | Fabrication and testing of electromagnetic mems microactuator utilizing pcb based planar micro-coil |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |