CN112271262B - Organic light-emitting device, preparation method and display panel - Google Patents

Organic light-emitting device, preparation method and display panel Download PDF

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CN112271262B
CN112271262B CN202011156775.XA CN202011156775A CN112271262B CN 112271262 B CN112271262 B CN 112271262B CN 202011156775 A CN202011156775 A CN 202011156775A CN 112271262 B CN112271262 B CN 112271262B
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layer
intermediate layer
fluorescent dopant
type host
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CN112271262A (en
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杨绘耘
张晓晋
孙海雁
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Abstract

Embodiments of the present specification provide an organic light emitting device, a method of manufacturing the same, and a display panel. Specifically, the organic light emitting device includes: a p-type substrate layer, an n-type substrate layer, and an intermediate layer therebetween; a fluorescent dopant is disposed in at least one of the p-type host layer and the n-type host layer, the fluorescent dopant being proximate to the intermediate layer and having a predetermined distance from the intermediate layer; the p-type and n-type host layers configured to form a spatially separated exciplex with the intermediate layer under electrical action; the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light. According to the technical scheme, the distribution area of excitons formed by the exciplex can be enlarged, and exciton quenching and efficiency roll-off caused by excessive concentration of excitons are effectively reduced.

Description

Organic light-emitting device, preparation method and display panel
Technical Field
The embodiment of the specification relates to the technical field of organic electroluminescent display, in particular to an organic light emitting device, a preparation method and a display panel.
Background
The thermal-activated delayed fluorescence (TADF) technology has been developed more rapidly in recent years as an OLED technology with application potential, and is known as a third generation OLED technology. Among them, TADF type interface exciplex (n type+p type) is used as matrix (Host) and is the focus of the development of the third generation OLED technology, which collects 100% of singlet excitons (S1) by delayed fluorescence effect and transmits them to dopant, so as to reach the theoretical breakthrough of IQE value. At present, the TADF-type interface exciplex is used as a matrix and still faces serious efficiency roll-off problems, thus preventing the development of the TADF-type interface exciplex.
Disclosure of Invention
In view of the above, it is an object of one or more embodiments of the present disclosure to provide an organic light emitting device, a method for manufacturing the same, and a display panel, which can reduce the efficiency roll-off when a TADF type interface exciplex is used as a matrix, and improve the energy utilization.
In view of the above object, a first aspect of the present specification provides an organic light emitting device comprising: a p-type substrate layer, an n-type substrate layer, and an intermediate layer therebetween;
a fluorescent dopant is disposed in at least one of the p-type host layer and the n-type host layer, the fluorescent dopant being proximate to the intermediate layer and having a predetermined distance from the intermediate layer;
the p-type and n-type host layers configured to form a spatially separated exciplex with the intermediate layer under electrical action;
the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light.
Further, the thickness of the intermediate layer is 1.0nm to 20.0nm.
Further, the material of the intermediate layer is selected from bipolar materials with balanced electron and hole transport.
Further, the p-type host material in the p-type host layer comprises one or more of carbazole, dibenzothiophene, dibenzofuran, aromatic amine, fluorene.
Further, the n-type host material in the n-type host layer includes azine derivatives; the substituent of the azine derivative is selected from one or more of dibenzo heteroatom five-membered ring, fluorene, benzene ring and biphenyl.
Further, an overlapping area of a photoluminescence spectrum of a mixed film layer prepared from a p-type matrix material in the p-type matrix layer and an n-type matrix material in the n-type matrix layer and an ultraviolet absorption spectrum of the fluorescent dopant is 50% or more.
Further, the preset distance is in the range of 3.0nm to 10.0nm.
Further, the fluorescent dopant forms at least one of a doped region or a fluorescent layer.
Further, the thickness of the fluorescent layer is 0.1-1.5 nm.
Further, the energy levels of the p-type host in the p-type host layer, the n-type host in the n-type host layer, the material of the intermediate layer, and the fluorescent dopant satisfy the following conditions:
|HOMO| (n type) -|LUMO| (p-type) ≥4ev，
|HOMO| (p-type) -|LUMO| (n type) ≤3ev，
|HOMO| (p-type)&n-type ≤|HOMO| (fluorescent dopant) ，
|LUMO| (fluorescent dopant) ≤|LUMO| (p-type)&n-type ，
|HOMO| (p-type) ＜|HOMO| (intermediate layer) ＜|HOMO| (n type) ，
|LUMO| (p-type) ＜|LUMO| (intermediate layer) ＜|LUMO| (n type) ，
S1 (fluorescent dopant) ＜S1 (p-type)&n-type And
T1 (fluorescent dopant) ＜T1 (p-type)&n-type ；
Wherein, |HOMO| (n type) Corresponding to the HOMO energy level of the n-type host material, |LUMO| (n type) LUMO energy levels corresponding to the n-type host material;
|HOMO| (p-type) Corresponding to the HOMO energy level of the p-type host material, |LUMO| (p-type) LUMO energy levels corresponding to the p-type host material;
|HOMO| (intermediate layer) Corresponding to the HOMO energy level of the interlayer material, |LUMO| (intermediate layer) LUMO energy levels corresponding to the interlayer material;
|HOMO| (fluorescent dopant) Corresponding to the HOMO energy level of the fluorescent dopant, |LUMO| (fluorescent dopant) LUMO energy levels corresponding to the fluorescent dopants;
|HOMO| (p-type)&n-type Corresponding n-type matrixHOMO levels of exciplex formed by the material and the p-type host material;
|LUMO| (p-type)&n-type LUMO energy levels of exciplex formed corresponding to the n-type host material and the p-type host material;
S1 (fluorescent dopant) The energy of the singlet exciton corresponding to the fluorescent dopant;
T1 (fluorescent dopant) Energy of triplet excitons corresponding to the fluorescent dopant;
S1 (p-type)&n-type Energy of singlet excitons corresponding to an exciplex formed by the n-type host material and the p-type host material;
T1 (p-type)&n-type Energy of triplet excitons corresponding to an exciplex formed by the n-type host material and the p-type host material.
In a second aspect of the present specification, there is also provided a method of manufacturing an organic light emitting device; the method specifically comprises the following steps:
providing a substrate;
sequentially forming a p-type matrix layer, an intermediate layer and an n-type matrix layer on the substrate;
wherein a fluorescent dopant is disposed in at least one of the p-type host layer and the n-type host layer; the fluorescent dopant is adjacent to the intermediate layer and has a preset distance from the intermediate layer;
wherein the p-type and n-type host layers are configured to form a spatially separated exciplex between the intermediate layer under electrical action;
the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light.
Further, the step of sequentially forming a p-type matrix layer, an intermediate layer and an n-type matrix layer on the substrate includes:
forming a first sub-layer of a p-type host including fluorescent dopants on the substrate;
forming a p-type substrate second sub-layer on the p-type substrate first sub-layer;
the intermediate layer is formed on the p-type matrix second sub-layer.
Further, the step of sequentially forming a p-type matrix layer, an intermediate layer and an n-type matrix layer on the substrate includes:
forming an n-type matrix second sub-layer on the intermediate layer;
an n-type host first sub-layer including a fluorescent dopant is formed on the n-type host second sub-layer.
Further, the fluorescent dopant in the p-type host first sub-layer or the n-type host first sub-layer forms a doped region or fluorescent layer.
Further, the thickness of the fluorescent layer is 0.1-1.5 nm.
Further, the thickness of the second sub-layer of the p-type matrix is matched with the preset distance; and/or
The thickness of the second sub-layer of the n-type matrix is matched with the preset distance.
Further, the thickness of the intermediate layer is 1.0nm to 20.0nm.
In a third aspect of the present specification, there is also provided a display panel comprising any one of the organic light emitting devices described above.
As can be seen from the above, the organic light emitting device, the method of manufacturing the same and the display panel provided in one or more embodiments of the present disclosure effectively reduce exciton quenching and efficiency roll-off due to excessive concentration of excitons by disposing an intermediate layer between the p-type host layer and the n-type host layer, so that a spatially separated exciplex is formed between the p-type host layer, the n-type host layer and the intermediate layer under an electrical effect, and a distribution area of excitons formed by the exciplex is enlarged. In addition, the use of spatial distance reduces the energy difference ΔE between triplet and singlet excitons generated by exciplex st Thereby promoting the triplet exciton to pass through (Reverse Intersystem Crossing, abbreviated as RISC) to the singlet exciton, and improving the exciton utilization rate. By disposing fluorescent dopants located in the p-type host layer and/or the n-type host layer proximate to and at a predetermined distance from the intermediate layer, an exciton formation region and an energy release region (i.e., a light emitting region)Domains) to avoid energy loss due to direct capture of excitons by fluorescent dopants. Thus, by providing an intermediate layer and setting the position of the fluorescent dopant, the efficiency roll-off of the organic light emitting device is reduced and the efficiency of the organic light emitting device is improved.
Drawings
For a clearer description of one or more embodiments of the present description or of the solutions of the prior art, the drawings that are necessary for the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only one or more embodiments of the present description, from which other drawings can be obtained, without inventive effort, for a person skilled in the art.
Fig. 1 is a schematic structural view of a related art organic light emitting device provided in the present specification;
fig. 2 is a schematic structural view of an organic light emitting device according to one or more embodiments of the present disclosure;
fig. 3 is another schematic structural view of an organic light emitting device provided in one or more embodiments of the present disclosure;
FIG. 4 is a schematic diagram of an electroluminescent mechanism of an organic light emitting device according to one or more embodiments of the present disclosure;
FIG. 5 is a schematic flow diagram of a method of fabricating an organic light emitting device according to one or more embodiments of the present disclosure;
fig. 6 is a flow diagram of another method of fabricating an organic light emitting device according to one or more embodiments of the present disclosure;
fig. 7 is a flow chart illustrating a further method of fabricating an organic light emitting device according to one or more embodiments of the present disclosure.
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
It is noted that unless otherwise defined, technical or scientific terms used in one or more embodiments of the present disclosure should be taken in a general sense as understood by one of ordinary skill in the art to which the present disclosure pertains. The use of the terms "first," "second," and the like in one or more embodiments of the present description does not denote any order, quantity, or importance, but rather the terms "first," "second," and the like are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
In the prior art, referring to fig. 1, an organic light emitting device using TADF type interface activator compound as a matrix (Host) generally includes an anode 101, a hole transport layer (HIL, hole Tranport Layer) 102, a p type matrix layer 103, an n type matrix layer 104, an electron transport layer (ETL, electron Transport Layer) 105, and a cathode 106. In such a structure, the p-type host layer 103 and the n-type host layer 104 are in direct contact, resulting in problems such as: the excitons are too concentrated at the interface where the p-type host layer 103 and the n-type host layer 104 contact each other, causing a roll-off in device efficiency; the uniform doping of the dopant results in an inefficient separation of the exciton generation region and the energy release region (corresponding light emitting region) such that the dopant directly traps the excitons, there is a Dexter energy loss, and further a reduction in the efficiency of the overall organic light emitting device.
Based on this, an organic light emitting device is provided in a first aspect of the present specification.
Referring to fig. 2 and 3, the organic light emitting device specifically includes a p-type matrix layer 204 and an n-type matrix layer 206, and an intermediate layer 205 therebetween; a fluorescent dopant is disposed in at least one of the p-type host layer 204 and the n-type host layer 206, the fluorescent dopant being proximate to the intermediate layer 205 and having a predetermined distance from the intermediate layer 205;
the p-type host layer 204 and the n-type host layer 206 are configured to form a spatially separated exciplex with the intermediate layer 205 under electrical action;
the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light.
The p-type host layer 204 includes a p-type host material that serves as a donor of the exciplex and is capable of transporting holes; the n-type host layer 206 includes an n-type host material that acts as an acceptor for the exciplex and is capable of transporting electrons.
Therefore, by arranging the intermediate layer between the p-type substrate layer and the n-type substrate layer, a space separated exciplex is formed among the p-type substrate layer, the n-type substrate layer and the intermediate layer under the action of electricity, the distribution area of excitons formed by the exciplex is enlarged, and exciton quenching and efficiency roll-off caused by excessive concentration of excitons are effectively reduced. In addition, the space distance is utilized to reduce the energy delta Est between the triplet state exciton and the singlet state exciton generated by the exciplex, thereby promoting the triplet state exciton to pass through (Reverse Intersystem Crossing, abbreviated as RISC) to the singlet state exciton in a reverse gap mode and improving the exciton utilization rate. By arranging fluorescent dopants in the p-type matrix layer and/or the n-type matrix layer close to the intermediate layer and at a preset distance from the intermediate layer, effective separation of the exciton formation region and the energy release region (i.e., the light emitting region) is achieved, and energy loss caused by direct capture of carriers by the fluorescent dopants is avoided. Thus, by providing an intermediate layer and setting the position of the fluorescent dopant, the efficiency roll-off of the organic light emitting device is reduced and the efficiency of the organic light emitting device is improved.
Here, the electroluminescent mechanism of the organic light emitting device described in one or more embodiments of the present specification is described as follows in conjunction with fig. 4: a spatially separated exciplex is formed between the p-type matrix layer and the n-type matrix layer and the intermediate layer under electrical action. The energy difference between singlet excitons and triplet excitons formed by the exciplex is usually small, so that triplet excitons (T1) can be up-converted to singlet excitons (S1) by reverse inter-gap crossover (RISC). The space distance between the donor and the acceptor of the space separated exciplex in the embodiment further reduces the energy level difference between the singlet excitons and the triplet excitons, and is more beneficial to up-conversion from the triplet excitons (T1) to the singlet excitons (S1), so that the energy of the excitons is collected in the form of the singlet excitons to be close to 100%. Further, the fluorescent dopant gains energy of the singlet exciton to realize luminescence.
Although the energy difference between the singlet excitons and the triplet excitons formed by the exciplex decreases with increasing distance between the donor and the acceptor, when the thickness of the intermediate layer exceeds the long-range coupling distance of the hole and electron pairs in the exciplex, it is difficult to form an effective exciplex, and thus it is impossible to convert the applied electric energy into stable light energy.
Thus, as an alternative embodiment, the thickness of the intermediate layer (Interlayer) is 1.0nm to 20.0nm. Through setting up the thickness of intermediate layer, can ensure effectively forming the space separation's exciplex and expanding as far as possible simultaneously between acceptor and the donor in the exciplex is at the same time the energy extremely poor between singlet exciton and the triplet exciton that the exciplex formed is effectively reduced, improves the proportion that the triplet exciton goes up to change to the singlet exciton, and then improves the utilization efficiency of organic light emitting device's energy.
Alternatively, the thickness may be 1.0nm, 1.5nm, 1.6nm, 2.1nm, 2.5nm, 3.0nm, 4.0nm, 5.0nm, 5.2nm, 5.3nm, 6.0nm, 7.0nm, 8.4nm, 9.1nm, 10.0nm, 12.0nm, 14.0nm, 17.0nm, 18.7nm, or 20.0nm.
As an alternative embodiment, the thickness of the intermediate layer is 3.0nm to 10.0nm.
It should be noted that, the thickness of the intermediate layer can be reasonably determined by those skilled in the art according to the long-range coupling distance of the hole pair and the electron pair in the exciplex, and the thickness is not particularly limited herein.
As an alternative embodiment, the material of the intermediate layer is selected from bipolar materials with balanced electron and hole transport.
It should be noted that, a person skilled in the art can select the material of the intermediate layer to meet the energy level requirements according to the specific location of the fluorescent dopant.
Illustratively, the fluorescent dopant is located in the p-type host layer, and the energy level of the material of the intermediate layer satisfies the following condition: LUMO (intermediate layer) -|LUMO| (p-type) ≥0.4ev，|HOMO| (intermediate layer) -|HOMO| (p-type) ≥0.2ev；|LUMO| (n type) -|LUMO| (intermediate layer) ≥0.2e，|HOMO| (n type) -|HOMO| (intermediate layer) ≥0.4ev。
Illustratively, the fluorescent dopant is located in the n-type host layer, and the energy level of the material of the intermediate layer satisfies the following condition: LUMO (intermediate layer) -|LUMO| (p-type) ≥0.2ev，|HOMO| (intermediate layer) -|HOMO| (p-type) ≥0.4ev；|LUMO| (n type) -|LUMO| (intermediate layer) ≥0.4ev，|HOMO| (n type) -|HOMO| (intermediate layer) ≥0.2ev。
It should be understood that HOMO refers to the highest occupied energy level; LUMO refers to the lowest unoccupied energy level. Specifically, |HOMO| (n type) Corresponding to the HOMO energy level of the n-type host material, |LUMO| (n type) LUMO energy levels corresponding to the n-type host material; HOMO (p-type) Corresponding to the HOMO energy level of the p-type host material, |LUMO| (p-type) LUMO energy levels corresponding to the p-type host material; HOMO (intermediate layer) Corresponding to the HOMO energy level of the interlayer material, |LUMO| (intermediate layer) Corresponding to the LUMO level of the interlayer material.
By such an arrangement, the intermediate layer can prevent carriers from drifting to the opposite layer based on the energy level difference, functioning as a blocking exciton.
Illustratively, the material of the intermediate layer is selected from carbazole-azine derivatives; wherein the substituent group in the carbazole-azine derivative is selected from one of dibenzo heteroatom five-membered ring and fluorene.
As an alternative embodiment, the p-type host material in the p-type host layer comprises one or more of carbazole, dibenzothiophene, dibenzofuran, aromatic amine, fluorene.
As an alternative embodiment, the n-type host material in the n-type host layer comprises an azine derivative; the substituent of the azine derivative is selected from one or more of dibenzo heteroatom five-membered ring, fluorene, benzene ring and biphenyl.
Here, by selecting the material of the intermediate layer, the donor material and the acceptor material of the exciplex, it is advantageous to achieve uniform distribution of holes and electrons, avoid imbalance in carrier distribution and carrier quenching caused thereby, and improve the light-emitting efficiency of the organic light-emitting device.
In one or more embodiments of the present disclosure, an overlap area of a photoluminescence spectrum (Photoluminescence Spectroscopy, abbreviated as PL) of a mixed film layer prepared from a p-type host material in the p-type host layer and an n-type host material in the n-type host layer and an ultraviolet absorption spectrum of the fluorescent dopant is 50% or more.
By the technical scheme, excitons formed by the exciplex can be ensured to be effectively transferred to the fluorescent dopant, and waste of the excitons is avoided.
It should be noted that a higher ratio of the overlapping area is more advantageous in securing the performance of the organic light emitting device. Illustratively, the overlap area may be 50%, 60%, 76%, 80%, 83%, 90%, 95%, etc.
Here, the specific material of the fluorescent dopant (Fluorescence Dopant, abbreviated FD) may meet the requirements of one or more embodiments of the present specification, and the specific limitation is not made herein on the material of the fluorescent dopant.
Illustratively, the fluorescent dopant is selected from pyrene, methyl Quinacridone (MQA), N' -Dimethylquinacridone (DMQA), rubrene, or 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyrene) H-pyran (DCM). It will be appreciated that the materials of the fluorescent dopant can be reasonably selected by those skilled in the art according to the color requirements of the organic light emitting device, and are not particularly limited herein.
As an alternative embodiment, the predetermined distance is in the range of 3.0nm to 10.0nm. By setting the preset distance, the energy passing of the singlet exciton can be ensuredThe energy transfer mechanism transfers energy to the fluorescent dopant to emit light rather than through the Dexter energy transfer mechanism, thereby effectively reducing the energy loss and Triplet-Triplet annihilation (Triplet-Triplet Annihilation, TTA) of the Dexter energy transfer mechanism.
Alternatively, the preset distance may be in the range of 4.0nm to 9.5nm, 4.5nm to 9.0nm, 5.0nm to 10.0nm, 5.5nm to 8.0nm, 6.0nm to 7.0nm, etc. By way of example, the preset distance may be 3.0nm, 4.0nm, 5.0nm, 5.2nm, 5.3nm, 6.0nm, 7.0nm, 8.4nm, 9.1nm and 10.0nm.
It should be noted that, the preset distance can be reasonably determined by those skilled in the art according to the dipole action distance between the fluorescent dopant and the molecule of the exciplex, and is not particularly limited herein.
In one or more embodiments of the present disclosure, the fluorescent dopant forms at least one of a doped region or a fluorescent layer.
The doped region is formed by doping a certain concentration of fluorescent dopant into the p-type host material and/or the n-type host material.
Optionally, the thickness of the doped region is 3.0 nm-30.0 nm. The doped region has a thickness of 3.0nm, 5.0nm, 5.3nm, 10.0nm, 20.0nm, or 30.0nm, for example.
Optionally, the doping concentration of the fluorescent dopant is 5% -20%. Illustratively, the doping concentration may be 5%, 7%, 10%, 13%, 17% or 20%.
The fluorescent layer means that the fluorescent dopant forms a separate fluorescent layer in the p-type host layer and/or the n-type host layer. The embodiments of the present disclosure provide different doping modes, and those skilled in the art may select the doping modes according to requirements of a required device, control accuracy, and the like.
Optionally, the thickness of the fluorescent layer is 0.1 nm-1.5 nm. Illustratively, the phosphor layer has a thickness of 0.1nm, 0.2nm, 0.3nm, 0.6nm, 0.8nm, 1.1nm, 1.4nm, or 1.5nm.
In one or more embodiments of the present specification, the energy levels of the p-type host material in the p-type host layer, the n-type host material in the n-type host layer, the material of the intermediate layer, and the fluorescent dopant satisfy the following conditions:
|HOMO| (n type) -|LUMO| (p-type) ≥4ev，
|HOMO| (p-type) -|LUMO| (n type) ≤3ev，
|HOMO| (p-type)&n-type ≤|HOMO| (fluorescent dopant) ，
|LUMO| (fluorescent dopant) ≤|LUMO| (p-type)&n-type ，
|HOMO| (p-type) ＜|HOMO| (intermediate layer) ＜|HOMO| (n type) ，
|LUMO| (p-type) ＜|LUMO| (intermediate layer) ＜|LUMO| (n type) ，
S1 (fluorescent dopant) ＜S1 (p-type)&n-type And
T1 (fluorescent dopant) ＜T1 (p-type)&n-type ；
Wherein, |HOMO| (n type) Corresponding to the HOMO energy level of the n-type host material, |LUMO| (n type) LUMO energy levels corresponding to the n-type host material;
|HOMO| (p-type) Corresponding to the HOMO energy level of the p-type host material, |LUMO| (p-type) LUMO energy levels corresponding to the p-type host material;
|HOMO| (intermediate layer) Corresponding to the HOMO energy level of the interlayer material, |LUMO| (intermediate layer) LUMO energy levels corresponding to the interlayer material;
|HOMO| (fluorescent dopant) Corresponding to the HOMO energy level of the fluorescent dopant, |LUMO| (fluorescent dopant) LUMO energy corresponding to fluorescent dopantA stage;
|HOMO| (p-type)&n-type HOMO levels of exciplex formed by the corresponding n-type host material and p-type host material;
|LUMO| (p-type)&n-type LUMO energy levels of exciplex formed corresponding to the n-type host material and the p-type host material;
S1 (fluorescent dopant) The energy of the singlet exciton corresponding to the fluorescent dopant;
T1 (fluorescent dopant) Energy of triplet excitons corresponding to the fluorescent dopant;
S1 (p-type)&n-type Energy of singlet excitons corresponding to an exciplex formed by the n-type host material and the p-type host material;
T1 (p-type)&n-type Energy of triplet excitons corresponding to an exciplex formed by the n-type host material and the p-type host material.
By defining the energy levels of the interlayer material, the n-type host material and the p-type host material, the exciplex formation and the exciton distribution area expansion are facilitated; by defining the energy levels of the fluorescent dopant, the exciplex and the energy relationship of the singlet and triplet excitons, it is ensured that the singlet excitons generated by the exciplex can be transferred to the fluorescent dopant, enabling efficient transfer of energy.
In one or more embodiments of the present disclosure, referring to fig. 2 and 3, the organic light emitting device further includes a hole transport layer 203, a hole injection layer 202, and an anode 201 sequentially disposed on a side of the p-type host layer 204 facing away from the intermediate layer 205, and an electron transport layer 207, an electron injection layer 208, and a cathode 209 sequentially disposed on a side of the n-type host layer 206 facing away from the intermediate layer 205.
It should be understood that the anode 201 and the cathode 209 are used to apply a driving voltage to realize an electric driving of the organic light emitting device. The hole injection layer 202 is used to reduce the hole injection barrier and improve the hole injection efficiency.
Alternatively, the material of the anode 201 is selected from Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), etc. with a high work function, and the thickness is 80.0nm to 200.0nm. Optionally, the average reflectivity of the anode in the visible light region is 85% -95%.
Optionally, the thickness of the hole injection layer 202 is 5.0nm to 20.0nm. Illustratively, the hole injection layer has a thickness of 5.0nm, 6.0nm, 9.5nm, 12.3nm, 15.8nm, or 20.0nm.
Optionally, the hole injection layer 202 is made of a material selected from HATCN, cuPc, NPB:F 4 TCNQ,TAPC:MnO 3 One or more of the following.
Alternatively, the material of the hole transport layer 203 is selected from materials with higher hole mobility. The specific limitation is not particularly limited herein.
Alternatively, the thickness of the hole transport layer 203 is 100.0nm to 140.0nm. Illustratively, the hole transport layer 203 has a thickness of 100.0nm, 120.0nm, 125.0nm, 135.0nm, or 140.0nm.
Optionally, the material of the electron transport layer 207 includes one or more of TmPyPB, tmPyTZ, B3PYMPM, TBBi, bphen, PO-T2T. Optionally, the thickness of the electron transport layer 207 is 20.0nm to 100.0nm. The electron transport layer 207 has a thickness of, for example, 20.0nm, 24.0nm, 33.0nm, 40.0nm, 48.0nm, 51.0nm, 57.0nm, 60.0nm, 85.0nm, or 100.0nm.
Optionally, the material of the electron injection layer 208 includes CsCO 3 、PEI+ZnO、ZnO+K 2 CO 3 One or more of ZnO+PEIE: liq. Optionally, the thickness of the electron injection layer 208 is 0.5nm to 5.0nm. The electron injection layer 208 has a thickness of 0.5nm,1.0nm, 1.8nm, 2.2nm, 3.0nm, 4.1nm, or 5.0nm, for example.
Here, the electron transport layer 207 and the electron injection layer 208 may be prepared by vacuum evaporation, and are not particularly limited herein.
Optionally, the cathode can be prepared by evaporating Mg, ag and Al films; alloys such as Mg: ag may also be used, optionally with Mg: ag ratios of 3: 7-1: 9.
Note that, the cathode 209 of the top emission type organic light emitting device and the bottom emission type organic light emitting device are different.
Illustratively, when the organic light emitting device corresponds to the top emission structure, the thickness of the cathode is 10.0nm to 20.0nm. The transmittance of the metal film layer of the cathode at 530nm is 50% -60%. Illustratively, when the organic light emitting device corresponds to the bottom emission structure, the thickness of the cathode is not less than 80.0nm to ensure good reflectivity.
As an alternative embodiment, the organic light emitting device further comprises a capping layer 2010 and an encapsulation layer 2011. The Capping Layer 2010 (CPL) and the encapsulation Layer 2011 are disposed on a side of the cathode 209 facing away from the electron injection Layer 208.
Optionally, the cover layer 2010 is formed by evaporating an organic small molecular material of 50.0nm to 80.0 nm. Optionally, the material of the cover layer should have a refractive index of greater than 1.8 at 460 nm.
Alternatively, the encapsulation layer 2011 may be encapsulated by a plastic frame, or may be encapsulated by a film, which is not limited herein.
In a second aspect of the present specification, there is also provided a method of manufacturing an organic light emitting device. Referring to fig. 5, the preparation method includes the following steps:
step 501: a substrate is provided.
The substrate includes an anode and a hole transport layer.
The anode was disposed on the BP substrate. Optionally, the BP substrate is sequentially placed in acetone, ethanol and deionized water for ultrasonic cleaning, and then placed in an oven for drying for standby.
Alternatively, the anode is substantially prepared by sputtering anode material onto the BP in a vacuum chamber.
Optionally, the hole transport layer is prepared by vacuum evaporation.
In some alternative embodiments, the substrate further comprises a hole injection layer, the hole injection layer being located between the hole transport layer and the anode. Optionally, the hole injection layer is prepared by an evaporation process.
Step 502: and sequentially forming a p-type matrix layer, an intermediate layer and an n-type matrix layer on the substrate.
Wherein a fluorescent dopant is disposed in at least one of the p-type host layer and the n-type host layer; the fluorescent dopant is adjacent to the intermediate layer and has a preset distance from the intermediate layer;
wherein the p-type and n-type host layers are configured to form a spatially separated exciplex between the intermediate layer under electrical action;
the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light.
The p-type matrix layer is arranged on one side of the substrate away from the anode.
Note that, the materials of the p-type substrate layer, the intermediate layer, and the n-type substrate layer are as described above, and will not be described here again.
The thickness of the intermediate layer is as described above, and will not be described here again. Alternatively, the intermediate layer is prepared by vacuum evaporation.
In some alternative embodiments, the thickness of the p-type host layer is 3.0nm to 60.0nm. Exemplary, the thickness of the p-type host layer is 3.0nm, 5.0nm, 13.0nm, 25.0nm, 30.0nm, 32.5nm, 46.0nm, 50.0nm, 55.0nm, or 60.0nm.
In some alternative embodiments, the p-type matrix layer is prepared by vacuum evaporation.
In some alternative embodiments, the n-type host layer has a thickness of 3.0nm to 60.0nm. Exemplary, the thickness of the p-type host layer is 3.0nm, 5.0nm, 14.0nm, 28.0nm, 30.0nm, 32.5nm, 46.0nm, 51.0nm, 55.0nm, or 60.0nm.
In some alternative embodiments, the n-type matrix layer is prepared by vacuum evaporation.
By such a production method, the organic light-emitting device according to any one of the foregoing can be obtained, and the process operability is strong and the implementation is facilitated.
In one or more embodiments of the present disclosure, as shown in fig. 6 and 2, the step of sequentially forming a p-type host layer, an intermediate layer, and an n-type host layer on the substrate includes:
step 601: a first sub-layer 2041 of a p-type host including fluorescent dopants is formed on the substrate.
It should be noted that the fluorescent dopant is located on the side of the first sub-layer of the p-type matrix facing away from the substrate, so as to ensure that the fluorescent dopant is close to the intermediate layer.
Step 602: a p-type substrate second sub-layer 2042 is formed on the p-type substrate first sub-layer 2041.
Optionally, the thickness of the p-type matrix second sub-layer 2042 matches the predetermined distance.
Step 603: the intermediate layer is formed on the p-type matrix second sub-layer.
The organic light-emitting device is prepared in such a manner that the distance between the fluorescent dopant and the intermediate layer can be precisely controlled, and the process accuracy is high.
In one or more embodiments of the present disclosure, as shown in fig. 7 and 3, the step of sequentially forming a p-type host layer, an intermediate layer, and an n-type host layer on the substrate includes:
step 701: an n-type matrix second sub-layer 2062 is formed over the intermediate layer.
Optionally, the thickness of the n-type matrix second sub-layer 2062 matches the predetermined distance.
Step 702: an n-type host first sub-layer 2061 including a fluorescent dopant is formed on the n-type host second sub-layer 2062.
The fluorescent dopant is located on a side near the intermediate layer.
The organic light-emitting device is prepared in such a manner that the distance between the fluorescent dopant and the intermediate layer can be precisely controlled, and the process accuracy is high.
As an alternative embodiment, the fluorescent dopant in the p-type matrix first sub-layer or the n-type matrix first sub-layer forms a doped region or a fluorescent layer.
Alternatively, the doped region is prepared by co-vacuum evaporation of the fluorescent dopant and the p-type host material (or n-type host material).
Alternatively, the phosphor layer is prepared by a low rate vacuum evaporation method. Further, the structure of the fluorescent layer is observed by a scanning electron microscope (Scanning Electron Microscope, SEM for short), and the microstructure of the fluorescent layer shows a discontinuous island structure. Optionally, the thickness of the fluorescent layer is 0.1-1.5 nm.
In a third aspect of the present specification, there is also provided a display panel. The display panel comprises the organic light emitting device of any one of the preceding. As will be appreciated by those skilled in the art, since the display panel includes any one of the aforementioned organic light emitting devices, the aforementioned organic light emitting devices have advantages, and will not be repeated here.
To further demonstrate the performance of the organic light emitting device provided in the present specification, the following is described in connection with specific examples.
Example 1: top-emission doped organic light emitting device
The specific structure is as follows: ITO/HIL (10 nm)/HTL (90 nm)/p-type host material (15 nm) +p-type host material (20 nm): FD (10%) +p-type host material (5 nm)/Interlayer (x nm)/n-type host material (40 nm)/ETL (50 nm)/EIL (3 nm)/Mg: ag. Here, x represents the thickness of the Interlayer. Where x=1 nm,4nm or 8nm.
Example 2: top-emission doped organic light emitting device
The specific structure is as follows: ITO/HIL (10 nm)/HTL (90 nm)/p-type host material (40 nm)/Interlayer (x nm)/n-type host material (5 nm) +n-type host material (20 nm): FD (10%) +n-type host material (15 nm)/ETL (50 nm)/EIL (3 nm)/Mg: ag. Here, x represents the thickness of the Interlayer. Wherein x=1nm, 4nm,8nm.
Example 3: top-emission undoped organic light emitting device
The specific structure is as follows: ITO/HIL (10 nm)/HTL (90 nm)/p-type host material (40 nm)/Interlayer (4 nm)/n-type host material (5 nm) +fluorescent layer (y nm) +n-type host material (35 nm)/ETL (50 nm)/EIL (3 nm)/Mg: ag. Here, y represents the thickness of the fluorescent layer. Where y=0.2 nm,0.5nm,1.0nm.
Comparative example 1: top-emission organic light-emitting device without interlayer doping
The specific structure is as follows: ITO/HIL (10 nm)/HTL (90 nm)/p-type host material (15 nm) +p-type host material (20 nm): FD (10%) +p-type host material (5 nm)/n-type host material (40 nm)/ETL (50 nm)/EIL (3 nm)/Mg: ag.
Comparative example 2: top-emitting organic light-emitting device with intermediate layer uniformly doped
The specific structure is as follows: ITO/HIL (10 nm)/HTL (90 nm)/p-type host material: FD (40 nm, 10%)/interlayer (1 nm)/n-type matrix material FD (40 nm, 10%)/ETL (50 nm)/EIL (3 nm)/Mg: ag.
Comparative example 3: top-emission non-interlayer non-doped organic light-emitting device
The specific structure is as follows: ITO/HIL (10 nm)/HTL (90 nm)/p-type host material (40 nm)/n-type host material (5 nm) +fluorescent layer (0.5 nm) +n-type host material (35 nm)/ETL (50 nm)/EIL (3 nm)/Mg: ag.
And (3) applying voltage between the anode and the cathode of the organic light-emitting devices prepared in each example and comparative example to enable the organic light-emitting devices to emit light and measure CIE value and efficiency.
The efficiency and the efficiency roll-off of the other organic light emitting devices in example 1, the organic light emitting device in example 2, the organic light emitting device in comparative example 1, and the organic light emitting device in comparative example 2 with respect to D2 were calculated using the actual data of the organic light emitting device (D2) with an Interlayer of 4nm as 100% standard values, and the results are shown in table 1.
TABLE 1
As can be seen from the experimental data of table 1, in the top emission doped organic light emitting device, examples 1 and having an intermediate layer (Interlayer) structure2 shows a more excellent efficiency and a smaller efficiency roll-off with an acceptably small rise in voltage compared to comparative example 1 without an intermediate layer; indicating that the intermediate layer can expand the exciton distribution area and act to block excitons. Comparison of the three organic light emitting devices of example 1 and the three organic light emitting devices of example 2 shows that the intermediate layer has the best performance at a thickness of 4nm, indicating that the thickness is in a better optimized range, and that the hole-electron long Cheng Ou cooperation and the energy difference ΔE between excitons can be better balanced st . Further, comparing example 1, example 2 and comparative example 2, it can be seen that uniformly doped comparative example 2 has a larger efficiency roll-off relative to non-uniformly doped example 1 and example 2. Therefore, by arranging the fluorescent dopant and the intermediate layer with a preset distance, the exciton generation and the energy release area can be effectively separated, and the fluorescent dopant is prevented from directly capturing carriers, so that non-radiative triplet excitons are avoided, and the efficiency roll-off of the organic light emitting device is further reduced.
The efficiency and the efficiency roll-off of the other organic light emitting devices in example 3 and the organic light emitting device in comparative example 3 with respect to D8 were calculated using the actual data of the organic light emitting device (D8) having a fluorescent layer of 0.5nm in example 3 as 100% standard values, and the results are shown in table 2.
TABLE 2
As can be seen from the experimental data of table 2, in the top emission undoped organic light emitting device, example 3 having an Interlayer (Interlayer) structure showed more excellent efficiency and smaller efficiency roll-off with an acceptably small increase in voltage compared to comparative example 3 without the Interlayer; indicating that the intermediate layer can expand the exciton distribution area and act to block excitons. In addition, when the three organic light emitting devices in example 3 are compared, it can be seen that the thickness of the fluorescent layer also affects the efficiency roll-off, and the organic light emitting device has the best performance at 0.5nm, indicating that the thickness is in the best optimization interval.
Those of ordinary skill in the art will appreciate that: the discussion of any of the embodiments above is merely exemplary and is not intended to suggest that the scope of the disclosure, including the claims, is limited to these examples; combinations of features of the above embodiments or in different embodiments are also possible within the spirit of the present disclosure, steps may be implemented in any order, and there are many other variations of the different aspects of one or more embodiments described above which are not provided in detail for the sake of brevity.
While the present disclosure has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of those embodiments will be apparent to those skilled in the art in light of the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.
The present disclosure is intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Any omissions, modifications, equivalents, improvements, and the like, which are within the spirit and principles of the one or more embodiments of the disclosure, are therefore intended to be included within the scope of the disclosure.

Claims (18)

1. An organic light emitting device, comprising: a p-type substrate layer, an n-type substrate layer, and an intermediate layer therebetween;
a fluorescent dopant is disposed in at least one of the p-type host layer and the n-type host layer, the fluorescent dopant being proximate to the intermediate layer and having a predetermined distance from the intermediate layer;
the p-type and n-type host layers configured to form a spatially separated exciplex with the intermediate layer under electrical action;
the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light.
2. The organic light-emitting device according to claim 1, wherein the thickness of the intermediate layer is 1.0nm to 20.0nm.
3. The organic light-emitting device according to claim 1, wherein the material of the intermediate layer is selected from bipolar materials with balanced electron and hole transport.
4. The organic light emitting device of claim 1, wherein the p-type host material in the p-type host layer comprises one or more of carbazole, dibenzothiophene, dibenzofuran, aromatic amine, fluorene.
5. The organic light-emitting device according to claim 1, wherein the n-type host material in the n-type host layer comprises an azine derivative; the substituent of the azine derivative is selected from one or more of dibenzo heteroatom five-membered ring, fluorene, benzene ring and biphenyl.
6. The organic light-emitting device according to claim 1, wherein an overlap area of a photoluminescence spectrum of a mixed film layer prepared from a p-type host material in the p-type host layer and an n-type host material in the n-type host layer and an ultraviolet absorption spectrum of the fluorescent dopant is 50% or more.
7. The organic light-emitting device according to claim 1, wherein the predetermined distance is in a range of 3.0nm to 10.0nm.
8. The organic light emitting device of claim 1, wherein the fluorescent dopant forms at least one of a doped region or a fluorescent layer.
9. The organic light-emitting device according to claim 8, wherein the thickness of the fluorescent layer is 0.1 to 1.5nm.
10. The organic light-emitting device according to claim 1, wherein energy levels of a p-type host in the p-type host layer, an n-type host in the n-type host layer, a material of the intermediate layer, and the fluorescent dopant satisfy the following conditions:
|HOMO| (n type) -|LUMO| (p-type) ≥4ev，
|HOMO| (p-type) -|LUMO| (n type) ≤3ev，
|HOMO| (p-type)&n-type ≤|HOMO| (fluorescent dopant) ，
|LUMO| (fluorescent dopant) ≤|LUMO| (p-type)&n-type ，
|HOMO| (p-type) ＜|HOMO| (intermediate layer) ＜|HOMO| (n type) ，
|LUMO| (p-type) ＜|LUMO| (intermediate layer) ＜|LUMO| (n type) ，
S1 (fluorescent dopant) ＜S1 (p-type)&n-type And
T1 (fluorescent dopant) ＜T1 (p-type)&n-type ；
Wherein, |HOMO| (n type) Corresponding to the HOMO energy level of the n-type host material, |LUMO| (n type) LUMO energy levels corresponding to the n-type host material;
|HOMO| (p-type) Corresponding to the HOMO energy level of the p-type host material, |LUMO| (p-type) LUMO energy levels corresponding to the p-type host material;
|HOMO| (intermediate layer) Corresponding to the HOMO energy level of the interlayer material, |LUMO| (intermediate layer) LUMO energy levels corresponding to the interlayer material;
|HOMO| (fluorescent dopant) Corresponding to the HOMO energy level of the fluorescent dopant, |LUMO| (fluorescent dopant) LUMO energy levels corresponding to the fluorescent dopants;
|HOMO| (p-type)&n-type Exciplex formed corresponding to n-type matrix material and p-type matrix materialIs a HOMO level of (C);
|LUMO| (p-type)&n-type LUMO energy levels of exciplex formed corresponding to the n-type host material and the p-type host material;
S1 (fluorescent dopant) The energy of the singlet exciton corresponding to the fluorescent dopant;
T1 (fluorescent dopant) Energy of triplet excitons corresponding to the fluorescent dopant;
S1 (p-type)&n-type Energy of singlet excitons corresponding to an exciplex formed by the n-type host material and the p-type host material;
T1 (p-type)&n-type Energy of triplet excitons corresponding to an exciplex formed by the n-type host material and the p-type host material.
11. A method of fabricating an organic light emitting device, comprising the steps of:
providing a substrate;
sequentially forming a p-type matrix layer, an intermediate layer and an n-type matrix layer on the substrate;
wherein a fluorescent dopant is disposed in at least one of the p-type host layer and the n-type host layer; the fluorescent dopant is adjacent to the intermediate layer and has a preset distance from the intermediate layer;
wherein the p-type and n-type host layers are configured to form a spatially separated exciplex between the intermediate layer under electrical action;
the fluorescent dopant is configured to capture energy of singlet excitons generated by the exciplex and emit light.
12. The method of manufacturing according to claim 11, wherein the step of sequentially forming a p-type host layer, an intermediate layer, and an n-type host layer on the substrate comprises:
forming a first sub-layer of a p-type host including fluorescent dopants on the substrate;
forming a p-type substrate second sub-layer on the p-type substrate first sub-layer;
the intermediate layer is formed on the p-type matrix second sub-layer.
13. The method of manufacturing according to claim 11, wherein the step of sequentially forming a p-type host layer, an intermediate layer, and an n-type host layer on the substrate comprises:
forming an n-type matrix second sub-layer on the intermediate layer;
an n-type host first sub-layer including a fluorescent dopant is formed on the n-type host second sub-layer.
14. The method of claim 12 or 13, wherein the fluorescent dopant in the first sub-layer of the p-type matrix or the first sub-layer of the n-type matrix forms a doped region or a fluorescent layer.
15. The method of claim 14, wherein the fluorescent layer has a thickness of 0.1 to 1.5nm.
16. The method of claim 12 or 13, wherein the thickness of the second sub-layer of the p-type matrix matches the predetermined distance; and/or
The thickness of the second sub-layer of the n-type matrix is matched with the preset distance.
17. The method of claim 11, wherein the intermediate layer has a thickness of 1.0nm to 20.0nm.
18. A display panel comprising the organic light-emitting device according to any one of claims 1 to 10.
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