CN112271212A - Field effect transistor module and design method thereof - Google Patents
Field effect transistor module and design method thereof Download PDFInfo
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- CN112271212A CN112271212A CN202011148797.1A CN202011148797A CN112271212A CN 112271212 A CN112271212 A CN 112271212A CN 202011148797 A CN202011148797 A CN 202011148797A CN 112271212 A CN112271212 A CN 112271212A
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- 230000005669 field effect Effects 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000013461 design Methods 0.000 title abstract description 7
- 238000004364 calculation method Methods 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000006870 function Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
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- 238000005859 coupling reaction Methods 0.000 description 3
- 238000012938 design process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The invention provides a field effect transistor module and a design method of the field effect transistor module, belongs to the technical field of semiconductors, and solves the problems that a field effect transistor packaging structure designed in the prior art needs to be externally hung with extra resistors when facing a larger current application scene, and especially layout space is seriously influenced when a plurality of resistors are externally hung. The method comprises the following steps: a transistor body and a resistor assembly; the transistor body is connected with the resistor assembly, and the resistor assembly is arranged on the source electrode of the transistor body.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a field effect transistor module and a method for designing the field effect transistor module.
Background
In the semiconductor field, a circuit is often arranged by using a field effect transistor, and since whether the current is as required during use will directly affect the operation of the field effect transistor, a current detecting part is often arranged near the field effect transistor. For example, at the source 12V of the power supply, a circuit block called Hot Swap (Hot plug module) is generally provided to monitor and protect the 12V circuit, and its protection function is mainly to avoid the over-current, under-voltage, over-voltage and short-circuit caused by the faulty operation or the aging or failure of the preceding and following circuit blocks. It can be seen that current detection is a critical part of the operating circuit to which the fet belongs.
Generally, in low current applications, many manufacturers have introduced an integrated package of field effect transistor modules including current sensing, which is packaged with a controller circuit (control IC), a transistor circuit (MOS IC) and a current sensing function. However, in practical applications, when a large current is inputted from the outside, the field effect transistor module of the integrated package circuit structure is not used, and the resistors of the sensing current components must be independently externally hung, or even a plurality of resistors are connected in parallel, which not only increases the material cost, but also occupies a large area in the circuit layout. Therefore, the field effect transistor package structure designed in the prior art needs to be externally hung with additional resistors in the application scene of larger current, and especially when multiple resistors are externally hung, the layout space is seriously affected.
Disclosure of Invention
The invention aims to provide a field effect transistor module and a design method of the field effect transistor module, which can effectively solve the problem that layout space is influenced by a plurality of externally-hung resistors in the prior art and save space occupation.
In a first aspect, the present invention provides a field effect transistor module apparatus comprising:
a transistor body and a resistor assembly;
the transistor body is connected with the resistor assembly, and the resistor assembly is arranged on the source electrode of the transistor body.
The optional resistor component is a source electrode plate provided with a deformation structure in the transistor body, and the deformation structure is used for improving the resistance of the source electrode plate based on the changed appearance.
Optionally, the deformation structure comprises at least one concave portion;
the concave part is arranged at the side end of the source electrode plate, and the concave part is used for reducing the cross section area of the source electrode plate.
Optionally, the deformation structure at least includes an extension structure, and the extension structure is used for increasing the length of the source electrode plate.
Optionally, the extension structure includes a protruding portion provided on the source electrode plate, and the protruding portion is used for increasing the current path length when the straight length of the source electrode plate is not changed.
Optionally, the convex portion comprises an arcuate protrusion.
Optionally, the raised portion comprises a flat-topped protrusion.
Optionally, the raised portion comprises a pointed projection.
In a second aspect, the present invention further provides a method for designing a field effect transistor module, which is applied to design the field effect transistor module according to any one of the above first aspects, and includes:
determining a target resistance value of a resistance component in the field effect transistor module according to an actual resistance requirement;
determining the cross-sectional area and the length of the resistor component according to a preset resistance value calculation formula and the target resistance value;
and when the resistor component is the source electrode plate of the field effect transistor module, determining the specification of the source electrode plate of the field effect transistor module according to the cross section area and the length.
The field effect transistor module comprises a transistor body and a resistor assembly, wherein the transistor body is connected with the resistor assembly, and the resistor assembly is arranged on the source electrode of the transistor body, so that the resistor assembly is directly arranged on the source electrode of the transistor body, the resistor assembly is arranged in the field effect transistor assembly, the space after integral packaging is obviously smaller than that of the structure of an externally-hung resistor in the prior art, especially when the space occupied by a plurality of externally-hung resistors is more, the integral occupied space is reduced, and the problem that the space layout is influenced when a plurality of externally-hung resistors in the prior art is solved.
Accordingly, the apparatus, system and computer-readable storage medium provided by the embodiments of the present invention also have the above technical effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic side view of a structure of a field effect transistor module according to an embodiment of the present invention;
fig. 2 is a schematic structural entity diagram of another field effect transistor module according to an embodiment of the present invention;
fig. 3 is a schematic side view of a source structure of a field effect transistor module according to an embodiment of the present invention;
fig. 4 is a schematic side view of another source structure of a field effect transistor module according to an embodiment of the invention;
fig. 5 is a schematic side view of a source structure in another field effect transistor module according to an embodiment of the present invention;
fig. 6 is a flowchart of a method for designing a field effect transistor module according to an embodiment of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "comprising" and "having," and any variations thereof, as referred to in embodiments of the present invention, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
An embodiment of the present invention provides a field effect transistor module, specifically, as shown in fig. 1, including:
a transistor body 11 and a resistor element 12;
the transistor body 11 is connected to the resistor 12, and the resistor 12 is disposed at the source 111 of the transistor body 11.
Therefore, the resistor component is directly arranged on the source electrode of the transistor body, the resistor component is arranged in the field effect transistor component, the space after the integral packaging is obviously smaller than that of the structure of the externally-hung resistor in the prior art, especially when the space occupied by a plurality of externally-hung resistors is more, the integral occupied space is reduced, and the problem that the space layout is influenced when a plurality of externally-hung resistors in the prior art is solved
In some embodiments, as shown in the overall diagram of fig. 2, the resistive component 12 is a source plate in the transistor body 11 provided with a deformation structure 112 for increasing the resistance of the source plate based on the changed profile.
Based on this, because the resistance subassembly passes through the source electrode plate of transistor body and deforms the structure setting, has avoided the needs that adds the resistance again in the packaging process, can directly utilize the source electrode plate of deformation structure to realize the function of resistance, further saved the whole size of field effect transistor module, practiced thrift the overall layout space.
In some embodiments, as shown in the partial view of fig. 2, the deformation structure 112 includes at least one concave portion 1121;
the concave portion 1121 is disposed at a side end of the source electrode plate, and the concave portion 1211 is used to reduce a cross-sectional area of the source electrode plate.
Meanwhile, the cross-sectional area of the source electrode plate can be known to influence the resistance value by the resistance calculation formula (the following formula a):
where R is resistance, ρ is material, L is current path length, and S is cross-sectional area of current path orthogonal. Based on the above formula a, the resistance is proportional to the length (L) of the current path in the conductor and inversely proportional to the cross-sectional area (S) of the conductor perpendicular to the current path in the conductor.
As shown in fig. 2, when the deformation structure 112 includes two inward protruding portions 1121, the two inward recessed portions can reduce the cross-sectional area of the source plate. That is, since a1 is reduced by two concave portions in S2 a1, S (cross-sectional area) is reduced, thereby increasing the resistance value.
In some embodiments, the deformation structure 112 includes at least one extension structure 1122, and the extension structure 1122 is used to increase the length of the source plate.
Since the formula a shows that the current path length (L) is proportional to the resistance of the conductor, the effect of the resistance of the source terminal of the field effect transistor can be obtained by providing the deformation structure with the extension structure.
In some embodiments, the extension structure 1122 includes providing the source plate with a raised portion 11221 for increasing the current path length when the straight length of the source plate is constant.
In some embodiments, as shown in FIG. 3, the raised portion 11221 may embody an arcuate projection.
In some embodiments, as shown in FIG. 4, the raised portion 11221 may be embodied as a flat-topped protrusion.
In some embodiments, as shown in fig. 5, the raised portion 11221 may be embodied as a pointed projection.
In this way, by providing the extension structure as the convex portion, the linear length of the source electrode plate can be reduced as much as possible while the current path length is increased, thereby achieving a further space-saving effect. In addition, the convex part is provided with an arc-shaped bulge, a flat-top bulge or a tip-end bulge, so that the bulge length is ensured, and meanwhile, the firmness is better.
In summary, the above-mentioned embodiments can extend the length of the source electrode metal sheet or improve the resistance of the conductor itself through partial structural shape improvement (or both the length and the shape) to replace the extra resistance required by the prior structure, thereby reducing the material consumption of the parts and the area required by the circuit layout.
As shown in fig. 6, the method for designing a field effect transistor module according to an embodiment of the present invention is applicable to the design process of the field effect transistor module in the foregoing embodiment, and specifically includes the following steps:
601. and determining the target resistance value of the resistor component in the field effect transistor module according to the actual resistor requirement.
602. And determining the cross section area and the length of the resistor component according to a preset resistance value calculation formula and the target resistance value.
603. And when the resistor component is the source electrode plate of the field effect transistor module, determining the specification of the source electrode plate of the field effect transistor module according to the cross section area and the length.
In this embodiment, the actual resistance requirement may be determined according to the actual needs of the user.
Meanwhile, the preset resistance value calculation formula may be:
wherein R is resistance, L is current path length, S is cross-sectional area of current path orthogonal, and rho is material conductivity coefficient. The conductivity coefficient of the material is related to the material of the transistor source electrode plate, therefore, when the transistor source electrode plate is determined, rho is a fixed value, so that the correlation between the resistance value and the length (L) area (S) can be seen based on the formula, and therefore, after the target resistance value is determined, the specific length-area ratio can be calculated.
In addition, because the length-area ratio is determined, the actual specification of the source electrode plate of the field effect transistor can be obtained according to the actual situation, namely the size and the length of the cross section area can be determined according to the actual requirement to determine the size of the concave part and the size and the shape of the convex part in the source electrode plate.
For example, assuming that the resistance value required by the path on the circuit is 0.01ohm, the above formula R can be substituted into 0.01, ρ is the conductivity coefficient of the electrode plate material, the L/S ratio can be obtained after the substitution, and then the size, shape and other parameters of the concave portion and the convex portion can be determined by starting from the length or sectional area of the current path direction and according to the reasonable width or length.
According to the design method of the field effect transistor module, firstly, a target resistance value of a resistor component in the field effect transistor module is determined according to actual resistor requirements; then, determining the cross-sectional area and the length of the resistor component according to a preset resistance value calculation formula and the target resistance value; and finally, when the resistor component is the source electrode plate of the field effect transistor module, determining the specification of the source electrode plate of the field effect transistor module according to the cross section area and the length, thereby realizing the design effect of the field effect transistor module. Therefore, the cross section area and the length can be determined according to the preset resistance value calculation formula after the target resistance value is determined based on the actual resistance requirement in the design process, and a foundation is laid for subsequently determining the specification of the source electrode plate in the field effect transistor module.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method can be implemented in other ways. The apparatus embodiments described above are merely illustrative, and for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
For another example, the division of the unit is only one division of logical functions, and there may be other divisions in actual implementation, and for another example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments provided by the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus once an item is defined in one figure, it need not be further defined and explained in subsequent figures, and moreover, the terms "first", "second", "third", etc. are used merely to distinguish one description from another and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; and the modifications, changes or substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention. Are intended to be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A field effect transistor module, comprising:
a transistor body and a resistor assembly;
the transistor body is connected with the resistor assembly, and the resistor assembly is arranged on the source electrode of the transistor body.
2. The FET module of claim 1, wherein the resistive component is a source plate in the transistor body provided with a deformation structure for increasing a resistance of the source plate based on the changed profile.
3. The FET module of claim 2, wherein the deformation structure comprises at least one concave portion;
the concave part is arranged at the side end of the source electrode plate, and the concave part is used for reducing the cross section area of the source electrode plate.
4. The FET module of claim 2 or 3, wherein the deformation structure comprises at least one extension structure for increasing the length of the source plate.
5. The FET module of claim 4, wherein the extension structure includes providing the source plate with a raised portion for increasing current path length when a straight length of the source plate is constant.
6. The FET module of claim 4, wherein the raised portion comprises an arcuate projection.
7. The FET module of claim 4, wherein the raised portion comprises a flat-topped protrusion.
8. The FET module of claim 4, wherein the raised portion comprises a pointed projection.
9. A method for designing a fet module according to any one of claims 1 to 8, comprising:
determining a target resistance value of a resistance component in the field effect transistor module according to an actual resistance requirement;
determining the cross-sectional area and the length of the resistor component according to a preset resistance value calculation formula and the target resistance value;
and when the resistor component is the source electrode plate of the field effect transistor module, determining the specification of the source electrode plate of the field effect transistor module according to the cross section area and the length.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011148797.1A CN112271212B (en) | 2020-10-23 | 2020-10-23 | Field effect transistor module and design method thereof |
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| CN202011148797.1A CN112271212B (en) | 2020-10-23 | 2020-10-23 | Field effect transistor module and design method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110127487A1 (en) * | 2008-08-07 | 2011-06-02 | Sony Corporation | Electronic device for a reconfigurable logic circuit |
| CN104009039A (en) * | 2013-02-21 | 2014-08-27 | 英飞凌科技股份有限公司 | One-time programming device and a semiconductor device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110127487A1 (en) * | 2008-08-07 | 2011-06-02 | Sony Corporation | Electronic device for a reconfigurable logic circuit |
| CN104009039A (en) * | 2013-02-21 | 2014-08-27 | 英飞凌科技股份有限公司 | One-time programming device and a semiconductor device |
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