CN112266581A - High-temperature-resistant polymer dielectric film and preparation method thereof - Google Patents

High-temperature-resistant polymer dielectric film and preparation method thereof Download PDF

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CN112266581A
CN112266581A CN202011185809.8A CN202011185809A CN112266581A CN 112266581 A CN112266581 A CN 112266581A CN 202011185809 A CN202011185809 A CN 202011185809A CN 112266581 A CN112266581 A CN 112266581A
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temperature
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drying
dielectric film
resistant polymer
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朱家铭
郭少云
吴宏
余文建
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Jiangsu Jitri Advanced Polymer Materials Research Institute Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
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    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2423/00Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2423/02Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2423/04Homopolymers or copolymers of ethene
    • C08J2423/08Copolymers of ethene
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2451/00Characterised by the use of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers
    • C08J2451/06Characterised by the use of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers grafted on to homopolymers or copolymers of aliphatic hydrocarbons containing only one carbon-to-carbon double bond
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    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2467/00Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2469/00Characterised by the use of polycarbonates; Derivatives of polycarbonates

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Abstract

The invention discloses a high-temperature-resistant polymer dielectric film which comprises the following components in parts by weight: 1-5 parts of compatible toughening modifier, 20-30 parts of polyester chip, 30-50 parts of poly 2, 6-naphthalene vinyl ester chip and 20-30 parts of polycarbonate; the preparation method comprises the following steps: s1: meanwhile, pre-crystallizing and drying the polyester chips and the poly-2, 6-naphthalene vinyl ester chips at the temperature of 140-150 ℃ for not less than 2h, drying the polycarbonate in an oven at the temperature of 120 ℃ for 4h, drying the compatible toughening agent in an oven at the temperature of 60 ℃ for 2h, and then adding the dried raw materials into a stirrer to prepare a mixture; s2: adding the mixture obtained in the step into a double-screw extruder for melt extrusion granulation to prepare blended particles; s3: and drying the prepared blended particles in an oven at the temperature of 90-110 ℃ for not less than 4h, and then feeding the particles into a single-screw extruder for melt tape casting extrusion to prepare the high-temperature-resistant polymer dielectric film. The heat resistance and the dielectric property of the high-temperature-resistant polymer dielectric film prepared by the invention are obviously improved under high-temperature use.

Description

High-temperature-resistant polymer dielectric film and preparation method thereof
Technical Field
The invention belongs to the technical field of dielectric films, and particularly relates to a high-temperature-resistant polymer dielectric film and a preparation method thereof.
Background
Polymer film capacitors are widely used in electronic and electrical components due to their light weight, breakdown resistance, etc., wherein the most central component is a polymer dielectric film. The most common polymer dielectric films at present are mainly polypropylene (PP or MPP) films and polyester films (PET or MPET), but the normal operating temperatures of the two films are relatively low, the maximum operating temperature of the heat-resistant polypropylene film is only about 105 ℃, and the maximum service temperature of the polyester film is about 125 ℃. And the heat distortion temperature of the two is low, even if the polyester film is about 66 ℃, the packaging process of the film capacitor can only use the wave temperature welding process. With the increasing use of high-power charging and discharging of new energy vehicles and the like, and new requirements for an automatic reflow soldering process technology, the market demand for high-temperature-resistant polymer dielectric films is increasing.
The existing high-temperature-resistant dielectric film mainly comprises a polyphenylene sulfide film (PPS), a poly-2, 6-naphthalene vinyl ester film (PEN) and a polyimide film (PI), wherein the use temperature of the polyphenylene sulfide film (PPS) can reach about 150 ℃, but the PPS can only be used for direct current at high temperature; the thermal deformation temperature of the poly-2, 6-naphthalene vinyl ester film (PEN) is 30-40 ℃ higher than that of the polyester film (PET), the dielectric property of the poly-2, 6-naphthalene vinyl ester film is similar to that of the polyester film (PET), the poly-2, 6-naphthalene vinyl ester film is often used for replacing the polyester film (PET) in the high-temperature resistant field, but the price of the poly-2, 6-naphthalene vinyl ester film is tens of times higher than that of the polyester film (PET), the poly-2, 6-naphthalene vinyl ester film is difficult to; polyimide (PI) films have good heat resistance up to 200 ℃ or higher, but have low dielectric constant, poor film-forming properties, high price, and difficulty in miniaturization and mass popularization.
Disclosure of Invention
The present invention is directed to a high temperature resistant polymer dielectric film and a method for preparing the same, which solves the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a high-temperature-resistant polymer dielectric film comprises the following components in parts by weight: 1-5 parts of compatible toughening modifier, 20-30 parts of polyester chip, 30-50 parts of poly 2, 6-naphthalene vinyl ester chip and 20-30 parts of polycarbonate.
Preferably, the compatible toughening modifier is one or more of ethylene-butyl acrylate-glycidyl methacrylate copolymer, ethylene-ethyl acrylate copolymer, polyethylene grafted maleic acid salt ionomer and polyolefin elastomer grafted maleic anhydride.
In any of the above schemes, preferably, the polyester chip is a blend of polyester chip base material masterbatch functional masterbatch, and the mass ratio of the base material masterbatch to the functional masterbatch is 9: 1.
a preparation method of a high-temperature-resistant polymer dielectric film comprises the following steps in sequence:
s1: pre-crystallization, drying and blending: meanwhile, pre-crystallizing and drying polyester chips and poly (2, 6-naphthalene vinyl ester) chips at 140-150 ℃ for not less than 2h, drying polycarbonate in a drying oven at 120 ℃ for 4h, drying a compatible toughening agent in a drying oven at 60 ℃ for 2h, sequentially adding the dried raw materials into a stirrer according to the parts by weight, stirring and mixing for 2h, and standing for 30min to prepare a mixture;
s2: adding the mixture obtained in the step into a double-screw extruder for melting, extruding and granulating, wherein the melting temperature interval of the extrusion and granulation is 260-300 ℃, and the temperature of a neck mold is not more than 270 ℃ to obtain blended particles;
s3: drying the prepared blended particles in an oven at the temperature of 90-110 ℃ for not less than 4h, and then feeding the particles into a single-screw extruder for melt tape casting extrusion to prepare the high-temperature-resistant polymer dielectric film with the thickness of 50-100 microns.
The high-temperature-resistant polymer dielectric film has a dielectric constant of more than 3.3 at 1000Hz under a normal-temperature test condition, a dielectric loss factor of less than 0.01 and a dielectric loss factor of less than 0.15 at 10000 Hz.
The high temperature resistant polymeric dielectric film has a vicat softening point greater than 90 ℃ and much greater than the vicat softening point of Polyester (PET) (about 65 ℃) and close to the vicat softening point of poly (2, 6-naphthalene vinyl ester) (PEN) (about 101 ℃) under a heat resistance test of ASTM1525-2017 at a 50N load and a ramp rate of 50 ℃/hour.
The high-temperature-resistant polymer dielectric film has stable dielectric properties in the range of 25-100 ℃, the dielectric constant of the high-temperature-resistant polymer dielectric film is more than 3.3 at 1000Hz in the temperature range, and the dielectric loss factor is less than 0.03.
The invention has the technical effects and advantages that: 1. compared with a polyester film, the high-temperature-resistant polymer dielectric film prepared by the invention has greatly improved heat resistance and dielectric property under a high-temperature use environment, dielectric loss factors within 100 ℃ are less than 0.03, and the conditions of device heating, charge loss and the like can be effectively reduced;
2. the consumption of high-cost poly 2, 6-naphthalene vinyl ester slices in the high-temperature resistant polymer dielectric film prepared by the invention is greatly reduced, and the raw material and use cost are far lower than that of the poly 2, 6-naphthalene vinyl ester film;
3. the high-temperature resistant polymer dielectric film prepared by the invention has the advantages that the strength of processed melt is enhanced due to the addition of the polyester chip, and the high-temperature resistant polymer dielectric film is more beneficial to extrusion casting and subsequent biaxial stretching processes.
Drawings
FIG. 1 shows room temperature variable dielectric constants of examples and experimental examples of the present invention;
FIG. 2 shows the room temperature variable dielectric dissipation factor of the examples and experimental examples of the present invention;
FIG. 3 shows the temperature-variable dielectric constant at 1000Hz for the examples and experimental examples of the present invention;
FIG. 4 shows the temperature swing dielectric loss factor at 1000Hz for junction examples and experimental examples of the present invention;
FIG. 5 is a comparison of Vicat softening points of examples of the present invention and test examples.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The first embodiment is as follows:
a high-temperature-resistant polymer dielectric film comprises the following components in parts by weight: 1 part of compatible toughening modifier, 20 parts of polyester chip, 30 parts of poly 2, 6-naphthalene vinyl ester chip and 20 parts of polycarbonate.
Specifically, the compatible toughening modifier is one or a combination of a plurality of ethylene-butyl acrylate-glycidyl methacrylate copolymer, ethylene-ethyl acrylate copolymer, polyethylene grafted maleic acid salt ionomer and polyolefin elastomer grafted maleic anhydride.
Specifically, the polyester chip is a blend of polyester chip base material master batch and functional master batch, and the mass ratio of the base material master batch to the functional master batch is 9: 1.
a preparation method of a high-temperature-resistant polymer dielectric film comprises the following steps in sequence:
s1: pre-crystallization, drying and blending: meanwhile, pre-crystallizing and drying polyester chips and poly 2, 6-naphthalene vinyl ester chips at 140 ℃ for not less than 2h, drying polycarbonate in a drying oven at 120 ℃ for 4h, drying a compatible toughening agent in a drying oven at 60 ℃ for 2h, sequentially adding the dried raw materials into a stirrer according to the parts by weight, stirring and mixing for 2h, and standing for 30min to obtain a mixture;
s2: adding the mixture obtained in the step into a double-screw extruder for melting, extruding and granulating, wherein the melting temperature of the extrusion and granulation is 260-300 ℃, and the temperature of a neck mold is not more than 270 ℃ to obtain blended particles;
s3: drying the prepared blended particles in a 90 ℃ oven for not less than 4h, and then feeding the particles into a single-screw extruder for melt tape casting extrusion to prepare the high-temperature-resistant polymer dielectric film with the thickness of 50-100 microns.
The vicat softening point and temperature resistance test of the high-temperature resistant polymer dielectric film is carried out by carrying out compression molding on double-screw granulated particles to obtain a thick sheet, wherein the thickness of the sample is not less than 3.2 mm.
Compared with a polyester film (PET), the high-temperature resistant polymer dielectric film has the advantages that the dielectric constant is slightly lower than that of the polyester film (PET) within a wider frequency and use temperature range, but the Vicat softening point is improved by nearly 30 ℃ (from 65.9 ℃ to 95.8 ℃), the dielectric loss factor is reduced (about 0.006) compared with that of the polyester film (PET), the dielectric loss factor at 100 ℃ at the frequency of 1000Hz is less than 0.02, and the performance under a high-temperature use environment is obviously improved.
Example two:
a high-temperature-resistant polymer dielectric film comprises the following components in parts by weight: 3 parts of compatible toughening modifier, 25 parts of polyester chip, 40 parts of poly 2, 6-naphthalene vinyl ester chip and 25 parts of polycarbonate.
Specifically, the compatible toughening modifier is one or a combination of a plurality of ethylene-butyl acrylate-glycidyl methacrylate copolymer, ethylene-ethyl acrylate copolymer, polyethylene grafted maleic acid salt ionomer and polyolefin elastomer grafted maleic anhydride.
Specifically, the polyester chip is a blend of polyester chip base material master batch and functional master batch, and the mass ratio of the base material master batch to the functional master batch is 9: 1.
a preparation method of a high-temperature-resistant polymer dielectric film comprises the following steps in sequence:
s1: pre-crystallization, drying and blending: meanwhile, pre-crystallizing and drying polyester chips and poly 2, 6-naphthalene vinyl ester chips at 145 ℃ for not less than 2h, drying polycarbonate in a drying oven at 120 ℃ for 4h, drying a compatible toughening agent in a drying oven at 60 ℃ for 2h, sequentially adding the dried raw materials into a stirrer according to the parts by weight, stirring and mixing for 2h, and standing for 30min to obtain a mixture;
s2: adding the mixture obtained in the step into a double-screw extruder for melting, extruding and granulating, wherein the melting temperature interval of the extrusion and granulation is 260-300 ℃, and the temperature of a neck mold is not more than 270 ℃ to obtain blended particles;
s3: drying the prepared blended particles in an oven at 100 ℃ for not less than 4h, and then feeding the particles into a single-screw extruder for melt tape casting extrusion to prepare the high-temperature-resistant polymer dielectric film with the thickness of 50-100 microns.
The vicat softening point and temperature resistance test of the high-temperature resistant polymer dielectric film is carried out by carrying out compression molding on double-screw granulated particles to obtain a thick sheet, wherein the thickness of the sample is not less than 3.2 mm.
Compared with a polyester film, the high-temperature-resistant polymer dielectric film has the dielectric constant similar to that of the polyester film within a wider frequency and use temperature range, but the Vicat softening point is improved by about 35 ℃ (from 65.9 ℃ to 100.9 ℃), the dielectric loss factor is reduced compared with the polyester film, the reduction range is more obvious particularly along with the temperature rise, the dielectric loss factor is about 0.01 at the frequency of 1000Hz and the dielectric loss factor at 100 ℃ is only slightly improved compared with that at room temperature.
Example three:
a high-temperature-resistant polymer dielectric film comprises the following components in parts by weight: 5 parts of compatible toughening modifier, 30 parts of polyester chip, 50 parts of poly 2, 6-naphthalene vinyl ester chip and 30 parts of polycarbonate.
Specifically, the compatible toughening modifier is one or a combination of a plurality of ethylene-butyl acrylate-glycidyl methacrylate copolymer, ethylene-ethyl acrylate copolymer, polyethylene grafted maleic acid salt ionomer and polyolefin elastomer grafted maleic anhydride.
Specifically, the polyester chip is a blend of polyester chip base material master batch and functional master batch, and the mass ratio of the base material master batch to the functional master batch is 9: 1.
a preparation method of a high-temperature-resistant polymer dielectric film comprises the following steps in sequence:
s1: pre-crystallization, drying and blending: meanwhile, pre-crystallizing and drying polyester chips and poly 2, 6-naphthalene vinyl ester chips at 150 ℃ for not less than 2h, drying polycarbonate in a drying oven at 120 ℃ for 4h, drying a compatible toughening agent in a drying oven at 60 ℃ for 2h, sequentially adding the dried raw materials into a stirrer according to the parts by weight, stirring and mixing for 2h, and standing for 30min to obtain a mixture;
s2: adding the mixture obtained in the step into a double-screw extruder for melting, extruding and granulating, wherein the melting temperature interval of the extrusion and granulation is 260-300 ℃, and the temperature of a neck mold is not more than 270 ℃ to obtain blended particles;
s3: drying the prepared blended particles in a drying oven at 110 ℃ for not less than 4h, and then feeding the particles into a single-screw extruder for melt tape casting extrusion to prepare the high-temperature-resistant polymer dielectric film with the thickness of 50-100 microns.
The vicat softening point and temperature resistance test of the high-temperature resistant polymer dielectric film is carried out by carrying out compression molding on double-screw granulated particles to obtain a thick sheet, wherein the thickness of the sample is not less than 3.2 mm.
Compared with a polyester film, the high-temperature-resistant polymer dielectric film has the dielectric constant similar to that of the polyester film within a wider frequency and use temperature range, but the Vicat softening point is improved by about 26.5 ℃ (from 65.9 ℃ to 92.4 ℃), the dielectric loss factor is reduced compared with the polyester film, the dielectric loss factor is about 0.02 at the frequency of 1000Hz and the temperature of 100 ℃, and the dielectric property within a wide temperature range is excellent.
The following examples are compared with comparative examples, and the specific test examples are as follows:
comparative example 1:
a high-temperature-resistant polymer dielectric film is composed of polyester slices and poly (2, 6-naphthalene vinyl ester) slices, and is characterized in that the high-temperature-resistant polymer dielectric film is prepared from the following raw materials in percentage by mass: 50 parts of polyester chips and 50 parts of poly 2, 6-naphthalene vinyl ester chips.
The preparation method can be the same as any of the above embodiments.
The Vicat softening point temperature resistance test of the polymer dielectric film is carried out by carrying out compression molding on double-screw granulated particles to obtain a thick sheet, wherein the thickness of the sample is not less than 3.2 mm.
The comparative example has a dielectric constant of about 3.66 at room temperature at 1000Hz, is slightly higher than that of polyester film, has a dielectric loss factor of about 0.008 and a dielectric loss factor of more than 0.03 at 100 ℃, is significantly improved compared with the example, but is reduced compared with the polyester film.
Comparative example 2:
the high temperature resistant polymer dielectric film is produced with polyester chip as material.
The preparation method can be the same as any of the above embodiments.
The Vicat softening point temperature resistance test of the polymer dielectric film is carried out by carrying out compression molding on double-screw granulated particles to obtain a thick sheet, wherein the thickness of the sample is not less than 3.2 mm.
The comparative example had a dielectric constant of about 3.65 at room temperature, a dielectric dissipation factor of about 0.01 at 1000Hz, and a dielectric dissipation factor of about 0.06 at 100 ℃.
The vicat softening point of this comparative example was 65.9 ℃.
The dielectric constant of the examples is slightly lower than that of the comparative examples, but the dielectric dissipation factor is also significantly reduced, as compared to the comparative examples, which have a dielectric dissipation factor of 0.006 to 0.008 at 1000Hz and about 0.01. The more remarkable improvement of the examples is shown in the aspect of heat resistance, the Vicat softening point of the 3 groups of examples is improved by about 30-40 ℃ compared with that of the comparative example, the dielectric loss factor at 100 ℃ is also far smaller than that of the comparative example, and the excellent high-temperature use performance is shown.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (4)

1. A high temperature resistant polymeric dielectric film characterized by: the paint comprises the following components in parts by weight: 1-5 parts of compatible toughening modifier, 20-30 parts of polyester chip, 30-50 parts of poly 2, 6-naphthalene vinyl ester chip and 20-30 parts of polycarbonate.
2. A high temperature resistant polymer dielectric film according to claim 1, wherein: the compatible toughening modifier is one or a combination of more of ethylene-butyl acrylate-glycidyl methacrylate copolymer, ethylene-ethyl acrylate copolymer, polyethylene grafted maleic acid salt copolymer and polyolefin elastomer grafted maleic anhydride.
3. A high temperature resistant polymer dielectric film according to claim 1, wherein: the polyester chip is a blend of polyester chip base material master batch and functional master batch, and the mass ratio of the base material master batch to the functional master batch is 9: 1.
4. a method of preparing a high temperature resistant polymer dielectric film according to claim 1, wherein: the method comprises the following steps in sequence:
s1: pre-crystallization, drying and blending: meanwhile, pre-crystallizing and drying polyester chips and poly (2, 6-naphthalene vinyl ester) chips at 140-150 ℃ for not less than 2h, drying polycarbonate in a drying oven at 120 ℃ for 4h, drying a compatible toughening agent in a drying oven at 60 ℃ for 2h, sequentially adding the dried raw materials into a stirrer according to the parts by weight, stirring and mixing for 2h, and standing for 30min to prepare a mixture;
s2: adding the mixture obtained in the step into a double-screw extruder for melting, extruding and granulating, wherein the melting temperature interval of the extrusion and granulation is 260-300 ℃, and the temperature of a neck mold is not more than 270 ℃ to obtain blended particles;
s3: and drying the prepared blended particles in an oven at the temperature of 90-110 ℃ for not less than 4h, and then feeding the particles into a single-screw extruder for melt tape casting extrusion to prepare the high-temperature-resistant polymer dielectric film.
CN202011185809.8A 2020-10-30 2020-10-30 High-temperature-resistant polymer dielectric film and preparation method thereof Pending CN112266581A (en)

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