CN112259616A - 一种太阳能吸收器 - Google Patents

一种太阳能吸收器 Download PDF

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CN112259616A
CN112259616A CN202011214580.6A CN202011214580A CN112259616A CN 112259616 A CN112259616 A CN 112259616A CN 202011214580 A CN202011214580 A CN 202011214580A CN 112259616 A CN112259616 A CN 112259616A
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photonic crystal
dimensional photonic
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李长红
孙大伟
易凌俊
王再鹏
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Abstract

本发明涉及一种太阳能吸收器。该太阳能吸收器包括：金属钨基底、二维光子晶体单元和抗反射层，所述二维光子晶体单元设置在所述金属钨基底之中和所述抗反射层之下，所述二维光子晶体单元的数量为多个，各所述二维光子晶体单元均以相同尺寸按四方晶格结构排列，并置于金属钨基底内部，各所述二维光子晶体单元均为半径为R的圆形空腔结构，各所述圆形空腔结构内部填充GaAs。本发明的太阳能吸收器具有全太阳光谱广角高吸收的能力。

Description

一种太阳能吸收器
技术领域
本发明涉及太阳能领域，特别是涉及一种太阳能吸收器。
背景技术
太阳能吸收器是太阳能利用中的关键结构，它通过吸收有效工作波长的光照，将其转化为热能、电能或者其他形式的能量。提高吸收器的吸收能力是促进太阳能利用发展进步的有效方式。提高太阳能吸收器的吸收能力主要有两个解决途径：增大吸收带宽和提高太阳辐射能力强的波长区域内的吸收率。那么，理想的吸收器应具备全太阳光谱高吸收能力。最近，多个研究组采用多层材料薄膜构成一维光子晶体结构的太阳能吸收器，有效提高了吸收率。Jie Luo和Yun Lai通过堆叠多层二氧化钛和硅组成的光子晶体，可以实现全向吸收，吸收率接近100％，但是高吸收带宽不够大，只在波长440nm到640nm的波长范围内有较高的吸收率；NargesAnsari和Ensiyeh Mohebbi设计了基于硅，二氧化硅和二硫化钼单层膜的光子晶体，在入射角0-60°内均能达到90％的吸收率，但需要较多层薄膜堆叠，器件过厚，制备比较困难，并且吸收带宽不够大，高吸收波长范围仅有100nm左右。与一维光子晶体结构的吸收器相比，二维光子晶体结构吸收器有明显的优势，吸收带宽更宽、吸收率高，且能够广角吸收。ChenglongWan等人设计了金属-介质-金属超表面吸收器，上层薄膜使用二维周期结构，在400-1200nm波长范围有接近90％高吸收率，在该波长范围以上吸收率较低，有较好的光谱选择性。刘开贤，蔺吉虹等人设计并计算了基于GaAs纳米阵列的二维光子晶体结构的太阳能电池，在200-900nm波长范围内，吸收率可达87.4％，最终优化后的功率转换效率为17.6％。然而这些结构都无法达成全太阳光谱高吸收的要求。
发明内容
本发明的目的是提供一种具有全太阳光谱广角高吸收能力的太阳能吸收器。
为实现上述目的，本发明提供了如下方案：
一种太阳能吸收器，包括：金属钨基底、二维光子晶体单元和抗反射层，所述二维光子晶体单元设置在所述金属钨基底之中和所述抗反射层之下，所述二维光子晶体单元的数量为多个，各所述二维光子晶体单元以相同尺寸按四方晶格结构排列，置于所述金属钨基底内部，各所述二维光子晶体单元均为半径为R的圆形空腔结构，各所述圆形空腔结构内部填充GaAs。
可选地，所述二维光子晶体单元的晶格常数为480nm。
可选地，所述二维光子晶体单元的空腔高度为2200nm
可选地，所述二维光子晶体单元的空腔半径为190nm。
可选地，所述抗反射层厚度为165nm。
可选地，所述金属钨基底的高度为2250nm。
根据本发明提供的具体实施例，本发明公开了以下技术效果：
本发明提供一种太阳能吸收器，该太阳能吸收器包括：金属钨基底、二维光子晶体单元和抗反射层，所述二维光子晶体单元设置在所述金属钨基底之中和所述抗反射层之下，所述二维光子晶体单元的数量为多个，各所述二维光子晶体单元以相同尺寸按四方晶格结构排列，置于所述金属钨基底内部，各所述二维光子晶体单元均为半径为R的圆形空腔结构，各所述圆形空腔结构内部填充GaAs。采用上述太阳能吸收器能够提高全太阳光谱广角吸收能力。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明太阳能吸收器组成结构侧视图；
图2为本发明太阳能吸收器组成结构横截面图；
图3为本发明太阳能吸收器组成结构俯视图；
图4为本发明GaAs折射率n及吸收系数k随波长的变化示意图；
图5为吸收光谱随空腔半径R的变化示意图；
图6为吸收光谱随抗反射层厚p的变化示意图；
图7为吸收器平均吸收率最大时的吸收光谱实意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的目的是提供一种具有全太阳光谱广角高吸收能力的太阳能吸收器。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
在金属钨(W)的圆形空腔中填充砷化镓(GaAs)的二维光子晶体结构吸收器，采用有限元法对吸收器进行研究，探索吸收谱变化规律，确定最优的结构几何参数，吸收器在300-2500nm的波长范围内有效吸收高达94.9％，最终得出具有全太阳光谱广角高吸收能力的太阳能吸收器。如图1所示，一种太阳能吸收器包括：金属钨基底1、二维光子晶体单元2和抗反射层3，所述二维光子晶体单元2设置在所述金属钨基底1之中和所述抗反射层3之下，所述二维光子晶体单元2的数量为多个，各所述二维光子晶体单元2均以相同尺寸按四方晶格结构在金属钨基底内部排列，各所述二维光子晶体单元2均为半径为R的圆形空腔结构，各所述圆形空腔结构内部填充GaAs。抗反射层3为GaAs抗反射层。
选择金属钨基底1作为结构的基底，其硬度高，熔点高，具有良好的高温稳定性，常温下不受空气侵蚀，它在远红外区具有高反射率，在长波长下具有低发射率，可作为结构的背反射器。
所述四方晶格结构二维光子晶体单元2的晶格常数为480nm。所述二维光子晶体单元2的空腔高度d为2200nm。所述二维光子晶体单元2的空腔半径为190nm。所述抗反射层3厚度为165nm。所述金属钨基底1的高度为2250nm，所述金属钨基底从空腔底部至基底底部的高度为50nm。设二维光子晶体单元2的晶格常数为A，抗反射层3厚度为p，圆形空腔的高度为d，半径为R，入射仰角为θ，入射方位角为
Figure BDA0002759922170000041
下面对二维光子晶体单元2的参数进行讨论：
对于吸收材料GaAs，其电子带隙为1.4eV，从图4中的GaAs折射率与吸收系数可知，在350-500nm波长范围内折射率和吸收系数变化较大，对太阳能的吸收效率较高。从图5中可以看出，GaAs的吸收波峰位于550nm附近，与太阳辐射光谱相比，该频段也是太阳光辐射能量最强的区域。
圆柱腔的吸收质量因子(Qabs)和辐射率(Qrad)相等时，可以得到吸收峰，此时圆柱腔与外辐射是临界耦合的，达到了Q匹配。空腔的半径R与高度d直接影响Qrad，且空腔的体积πR2d与Qabs密切相关，这意味着可以通过调整R,d来预测吸收谱。在计算过程中，发现空腔的高度d取较小值时，吸收谱的波动较大，吸收曲线不平滑，且在长波长处(1.8-2.5um)吸收率有所下降，出现多个吸收峰。但较小的d/A比值对应的制造难度小，且材料消耗少，考虑到制造难度与吸收器性能，最终选定d＝2.2um。
为使吸收器具备全太阳光谱高吸收的能力，同时满足吸收器高性能与实际器件制造低难度的需要，应确定空腔半径R的最优值。为研究空腔半径R对吸收器吸收率的影响，取半径R为150nm,170nm,190nm,210nm。结果如图5所示，随着空腔半径R逐渐变大，吸收器在高吸收带宽内的吸收率持续增加，且高吸收带宽也有一定增加。吸收谱出现两个吸收峰，分别在700nm和1400nm波长处，且在波长700nm处与各吸收谱的截止波长处出现了100％的完美吸收率。虽然空腔半径R越大该结构对入射光的吸收能力越强，但是过大的R会导致空腔壁过薄。当R取210nm时，A-2R过小，会导致制备困难、结构不稳定，考虑到吸收器性能、制造工艺和实际结构，确定R＝190nm。
为了兼顾不同波长处的抗反射层3的性能，需要确定抗反射层3的厚度p，研究了抗反射层厚度p对吸收器吸收率的影响，选取p＝111nm，158nm，165nm，172nm。从图6可以看出，在高吸收波长范围内出现多个吸收峰，在吸收峰处抗反射层显示高透射性。在500-700nm波长范围内，厚度p取值为111nm和172nm时，吸收器的吸收率低于p取值为158nm和165nm时吸收器的吸收率。在1400-2000nm波长范围内四个不同厚度的结构对应的吸收谱相似，且高吸收带宽范围没有发生变化。由于p的变化会影响到整个高吸收带宽范围，仅通过吸收谱无法确定最佳值。定义有效吸收
Figure BDA0002759922170000051
为：
Figure BDA0002759922170000052
式中，a(λ)为吸收率关于波长的函数，S(λ)为太阳辐射光谱(AM1.5标准).
表1给出了不同p的有效吸收
Figure BDA0002759922170000053
可以看出当p为165nm时，
Figure BDA0002759922170000054
较高。所以p＝165nm适合本发明抗反射层3的结构设计。
表1不同的抗反射层3厚度p下的有效吸收
Figure BDA0002759922170000055
综上所述，出于对吸收器性能、实际器件与制作工艺的综合考虑，确定该二维光子晶体结构吸收器的晶格常数A＝480nm，空腔高度d＝2200nm，空腔半径R＝190nm，抗反射层3高度p＝165nm。
本发明设计了以金属钨为基底材料，以四方晶格结构排列的圆形空腔构成二维光子结晶体结构，并且在圆形空腔中填充GaAs，具有抗反射层3的太阳能吸收器。在300-2500nm波长范围内有高达94.9％的有效吸收，高吸收带内吸收率最小值为82.9％，在700nm和2500nm波长处有接近100％的完美吸收率，吸收器具有全太阳光谱高吸收的能力。在入射仰角为50°的情况下，入射光为TE模时，
Figure BDA0002759922170000056
入射光为TM模时
Figure BDA0002759922170000057
仍有较高的吸收率，吸收器具有良好的偏振无关性和广角吸收能力。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。
本发明中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的装置及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处。综上所述，本说明书内容不应理解为对本发明的限制。

Claims (6)

1.一种太阳能吸收器，其特征在于，包括：金属钨基底、二维光子晶体单元和抗反射层，所述二维光子晶体单元设置在所述金属钨基底之中和所述抗反射层之下，所述二维光子晶体单元的数量为多个，各所述二维光子晶体单元以相同尺寸按四方晶格结构排列，置于所述金属钨基底内部，各所述二维光子晶体单元均为半径为R的圆形空腔结构，各所述圆形空腔结构内部填充GaAs。
2.根据权利要求1所述的太阳能吸收器，其特征在于，所述二维光子晶体单元的晶格常数为480nm。
3.根据权利要求1所述的太阳能吸收器，其特征在于，所述二维光子晶体单元的空腔高度为2200nm。
4.根据权利要求1所述的太阳能吸收器，其特征在于，所述二维光子晶体单元的空腔半径为190nm。
5.根据权利要求1所述的太阳能吸收器，其特征在于，所述抗反射层厚度为165nm。
6.根据权利要求1所述的太阳能吸收器，其特征在于，所述金属钨基底的高度为2250nm。
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