CN112259557B - Display panel and preparation method thereof - Google Patents
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- CN112259557B CN112259557B CN202011100251.9A CN202011100251A CN112259557B CN 112259557 B CN112259557 B CN 112259557B CN 202011100251 A CN202011100251 A CN 202011100251A CN 112259557 B CN112259557 B CN 112259557B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 152
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 152
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 32
- 230000007423 decrease Effects 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 28
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 25
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 25
- 239000010949 copper Substances 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 39
- 239000007769 metal material Substances 0.000 description 15
- 238000001579 optical reflectometry Methods 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention provides a display panel and a preparation method thereof. The display panel comprises a first metal layer and at least two metal oxide layers. The metal oxide layer is laminated on one surface of the first metal layer. In these metal oxide layers, the content of oxygen atoms of the metal oxide gradually decreases from the side away from the metal layer to the side close to the metal layer.
Description
Technical Field
The invention relates to the field of display equipment, in particular to a display panel and a preparation method thereof.
Background
In current large-sized display panel products, especially current hot 8K products, a conductive layer (e.g., a gate) in a TFT (Thin Film Transistor) panel is generally made of metal such as Cu (copper). However, the reflectivity of visible light on the surface of the Cu film can reach 90% at most, and the Cu film is not shielded above, so that the visible light can be reflected when reaching the surface of the Cu film, thereby causing the reflectivity of the product to be higher and affecting the visual effect.
The molybdenum oxide layer with low reflectivity is designed above or below the Cu film, so that the reflectivity of the product can be reduced, and the requirement of high-order products is met.
Disclosure of Invention
The invention aims to provide a display panel and a preparation method thereof, and aims to solve the problem that in the prior art, the adhesion force of a low-reflection metal oxide layer and a Cu film is low.
In order to achieve the above object, the present invention provides a display panel including a first metal layer and at least two metal oxide layers. The metal oxide layer is laminated on one surface of the first metal layer.
In these metal oxide layers, the content of oxygen atoms of the metal oxide gradually decreases from the side away from the metal layer to the side close to the metal layer.
Furthermore, the display panel further comprises a second metal layer, and the second metal layer is arranged on one surface of the first metal layer, which is far away from the metal oxide layer.
Further, when having two metal oxide layers, the display panel includes a first metal oxide layer and a second metal oxide layer. The first metal oxide layer is arranged on one surface of the first metal layer. The second metal oxide layer is arranged on one surface of the first metal oxide layer far away from the first metal layer.
Wherein the number of oxygen atoms of the metal oxide in the first metal oxide layer is less than or equal to 1, and the number of oxygen atoms of the metal oxide in the second metal oxide layer is less than or equal to 3.
Further, in these metal oxide layers, the thickness thereof gradually increases from the side away from the metal layer to the side close to the metal layer.
Further, the first metal layer comprises copper, the second metal layer comprises molybdenum, and the metal oxide layer comprises a layer of molybdenum oxide.
The invention also provides a preparation method of the display panel, which comprises the following steps: a first metal layer is provided. And forming at least two metal oxide layers which are arranged in a laminated mode on the first metal layer.
In these metal oxide layers, the content of oxygen atoms of the metal oxide gradually decreases from the side away from the metal layer to the side close to the metal layer.
Further, the preparation method of the display panel further comprises the following steps: and forming a second metal layer on one surface of the first metal layer far away from the metal oxide layer.
Further, the first metal layer contains copper, the second metal layer contains molybdenum, and the metal oxide layer contains molybdenum oxide.
Further, the step of forming at least two metal oxide layers stacked on the first metal layer includes the steps of:
forming a first metal oxide layer on the first metal layer: and introducing argon and oxygen into the deposition chamber, and depositing a layer of metal oxide on one surface of the first metal layer by a sputtering deposition method to form the first metal oxide layer.
Forming a second metal oxide layer on a surface of the first metal oxide layer away from the first metal layer: and introducing argon and oxygen into the deposition chamber, and depositing a layer of metal oxide on the surface of the first metal oxide layer far away from the first metal layer by a sputtering deposition method to form the second metal oxide layer.
Wherein, when the first metal oxide layer is deposited, the flow ratio of the argon to the oxygen is 0.1-1. And when the second metal oxide layer is deposited, the flow ratio of the argon to the oxygen is more than 10.
Further, the thickness of the first metal oxide layer is less than the thickness of the second metal oxide layer.
The invention has the advantages that: the invention discloses a display panel and a preparation method thereof. The display panel improves the adhesive force between the metal oxide layer and the first metal layer through the metal oxide layer with low oxygen atoms, prevents the problem that the metal oxide layer and the first metal layer are stripped and fall off due to subsequent high-temperature processing, and improves the yield of the display panel.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a display panel manufacturing method in embodiment 1 of the present invention;
FIG. 2 is a schematic view of the layered structure in step S20 in example 1 of the present invention;
FIG. 3 is a schematic view of the layered structure in step S30 in example 1 of the present invention;
FIG. 4 is a schematic view of the layered structure in step S40 in example 1 of the present invention;
FIG. 5 is a schematic view of a layer structure of a display panel in embodiment 1 of the present invention;
FIG. 6 is a schematic flow chart illustrating a method for manufacturing a display panel according to embodiment 2 of the present invention;
FIG. 7 is a schematic view of the layered structure in step S20 in example 2 of the present invention;
FIG. 8 is a schematic view of the layered structure in step S30 in example 2 of the present invention;
fig. 9 is a schematic view of a layer structure in a display panel according to embodiment 2 of the present invention.
The components in the figures are represented as follows:
a display panel 100;
a substrate 10; a first metal layer 20;
a metal oxide layer 30;
a first metal oxide layer 31; a second metal oxide layer 32;
a second metal layer 40.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be operated in a particular orientation, and thus are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature "on," "above" and "over" the second feature may include the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Further, the present application may repeat reference numerals and/or reference letters in the various examples for simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or arrangements discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Example 1
The embodiment of the invention provides a display device, which comprises a display panel 100, wherein the display panel 100 is used for providing a display picture for the display device. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a notebook computer and the like.
As shown in fig. 5, the display panel 100 includes a substrate 10, a first metal layer 20, a second metal layer 40, and a metal oxide layer 30.
The substrate 10 is used to protect the entire structure of the display panel 100, and may be an insulating substrate such as a glass substrate or a quartz substrate.
The first metal layer 20 is disposed on a surface of the substrate 10, and is used for transmitting power to devices in the display panel 100. The first metal layer 20 is made of a metal material with excellent conductivity, and the metal material may be copper.
The second metal layer 40 is disposed between the first metal layer 20 and the substrate 10. The second metal layer 40 mainly contains molybdenum, which may be prepared from pure molybdenum, or may be prepared by doping at least one of titanium, nickel, tantalum, tungsten, niobium, and the like into molybdenum.
The adhesion between the metal material copper in the first metal layer 20 and the non-metal insulating substrate 10 is poor, and the second metal layer 40 is disposed between the first metal layer 20 and the substrate 10 to improve the adhesion between the first metal layer 20 and the substrate 10.
The metal oxide layer 30 is disposed on a surface of the first metal layer 20 away from the second metal layer 40. The main material in the metal oxide layer 30 is molybdenum oxide.
Since the visible light reflectivity of the first metal layer 20 can reach more than 80%, the visible light reaches the surface of the first metal layer 20 to cause reflection, which results in a higher reflectivity of the product, affects the visual effect, and cannot meet the requirements of high-order products. The light reflectivity of the molybdenum oxide in the metal oxide layer 30 is low, and generally can reach 5% at the lowest, and the metal oxide layer 30 arranged on one surface of the first metal layer 20 can effectively reduce the light reflectivity of the surface of the first metal layer 20, and prevent the visual effect from being influenced by the high light reflectivity of the product.
In the embodiment of the present invention, the display panel 100 has two metal oxide layers 30, i.e., a first metal oxide layer 31 and a second metal oxide layer 32. The first metal oxide layer 31 is disposed on the first metal layer 20, and the second metal oxide layer 32 is disposed on a surface of the first metal oxide layer 31 away from the first metal layer 20. The first metal oxide layer 31 and the second metal oxide layer 32 both have molybdenum oxide therein.
Wherein the oxygen atoms of the metal oxide in the first metal oxide layer 31 are less than the oxygen atoms of the metal oxide in the second metal oxide layer 32. And, the thickness of the first metal oxide layer 31 is smaller than the thickness of the second metal oxide layer 32.
Specifically, the number of oxygen atoms in the first metal oxide layer 31 is less than or equal to 1, and the number of oxygen atoms in the metal oxide in the second metal oxide layer 32 is greater than 1 and less than or equal to 3.
Molybdenum oxide used in the prior art is of an amorphous structure, and has poor adhesion to copper, which is a metal material in the first metal layer 20, and the film layer is likely to be separated in the subsequent high-temperature process, which affects the quality of the display panel 100. In the embodiment, the first metal oxide layer 31 with low oxygen atoms directly contacts the first metal layer 20, so as to ensure the adhesion between molybdenum oxide and the metal material copper, and the second metal oxide layer 32 with high oxygen atoms is disposed on the first metal oxide layer 31, so as to ensure the low reflectivity of the display panel 100, thereby solving the problem of poor adhesion between molybdenum oxide and the metal material copper in the prior art, and improving the yield of the display panel 100.
The embodiment of the present invention further provides a preparation method of the display panel 100, where the preparation steps of the preparation method of the display panel are shown in fig. 1, and the preparation method includes the following specific preparation steps:
step S10) providing a substrate 10: an insulating substrate 10, which may be a glass substrate or a quartz substrate, is prepared. And the substrate 10 is cleaned.
Step S20) preparing the second metal layer 40: a layer of a metal material containing molybdenum is prepared on one surface of the substrate 10 by a deposition method or by an evaporation method to form a second metal layer 40 as shown in fig. 2. The metal material may be pure molybdenum, or an alloy material formed by doping at least one of metals such as titanium, nickel, tantalum, tungsten, niobium and the like into molybdenum metal.
Step S30) preparing the first metal layer 20: a layer of copper-containing metal material is prepared on a surface of the second metal layer 40 away from the substrate 10 by a deposition method or by an evaporation method, so as to form the first metal layer 20 shown in fig. 3.
Step S40) preparing the first metal oxide layer 31: the substrate 10 is placed in a deposition chamber, and argon and oxygen are introduced into the deposition chamber, wherein the flow ratio of the argon to the oxygen is 0.1-1. When the volume ratio of the argon gas to the oxygen gas in the deposition chamber is 0.1-1, a layer of molybdenum oxide with the thickness of 10-200 angstroms is deposited on the surface of the first metal layer 20 far away from the second metal layer 40 by a deposition method to form a first metal oxide layer 31 as shown in fig. 4. Wherein the oxygen atom content in the molybdenum oxide is less than 1.
Step S50) preparing the second metal oxide layer 32: a substrate 10 is placed in the deposition chamber and the flow ratio of the argon gas and the oxygen gas is increased to greater than 10. When the volume ratio of the argon gas to the oxygen gas in the deposition chamber is greater than 10, a layer of molybdenum oxide with a thickness of 400-900 angstroms is deposited on a surface of the first metal oxide layer 31 away from the first metal layer 20 to form the second metal oxide layer 32, and finally the display panel 100 shown in fig. 5 is formed. Wherein the oxygen atom content in the molybdenum oxide is greater than 1 and less than or equal to 3.
The embodiment of the invention provides a display panel 100 and a preparation method thereof. The display panel 100 improves the adhesion between the metal oxide layer 30 and the first metal layer 20 through the stacked design of the first metal oxide layer 31 with low oxygen atoms and the second metal oxide layer 32 with oxygen atoms, prevents the peeling and dropping between the metal oxide layer 30 and the first metal layer 20 caused by the subsequent high-temperature process, and improves the yield of the display panel 100.
Example 2
The embodiment of the invention provides a display device, which comprises a display panel 100, wherein the display panel 100 is used for providing a display picture for the display device. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a notebook computer and the like.
As shown in fig. 9, the display panel 100 has a substrate 10, a first metal layer 20 and a metal oxide layer 30.
The substrate 10 is used to protect the entire structure of the display panel 100, and may be an insulating substrate such as a glass substrate or a quartz substrate.
The first metal layer 20 is disposed on the substrate 10 and is used for transmitting power to devices in the display panel 100. The first metal layer 20 is made of a metal material with excellent conductivity, and the metal material may be copper.
The metal oxide layer 30 is disposed between the first metal layer 20 and the substrate 10. The main material in the metal oxide layer 30 is molybdenum oxide.
Since the visible light reflectivity of the first metal layer 20 can reach more than 80%, the visible light reaching the surface of the first metal layer 20 causes reflection, which results in a higher reflectivity of the product, affects the visual effect, and cannot meet the requirements of high-order products. The light reflectivity of the molybdenum oxide in the metal oxide layer 30 is low, and generally can reach 5% at the lowest, and the metal oxide layer 30 arranged on one surface of the first metal layer 20 can effectively reduce the light reflectivity of the surface of the first metal layer 20, and prevent the visual effect from being influenced by the high light reflectivity of the product.
In the embodiment of the present invention, the display panel 100 has two metal oxide layers 30, i.e., a first metal oxide layer 31 and a second metal oxide layer 32. The second metal oxide layer 32 is disposed on a surface of the substrate 10, and the first metal oxide layer 31 is disposed on a surface of the second metal oxide layer away from the substrate 10. The first metal oxide layer 31 and the second metal oxide layer 32 both have molybdenum oxide therein.
Wherein the oxygen atoms of the metal oxide in the first metal oxide layer 31 are less than the oxygen atoms of the metal oxide in the second metal oxide layer 32. And, the thickness of the first metal oxide layer 31 is smaller than the thickness of the second metal oxide layer 32.
Specifically, the number of oxygen atoms in the first metal oxide layer 31 is less than or equal to 1, and the number of oxygen atoms in the metal oxide in the second metal oxide layer 32 is greater than 1 and less than or equal to 3.
Molybdenum oxide used in the prior art is of an amorphous structure, has poor adhesion with copper, which is a metal material in the first metal layer 20, and is prone to film detachment in subsequent high-temperature processes, thereby affecting the quality of the display panel 100. In the embodiment, the first metal oxide layer 31 with low oxygen atoms directly contacts the first metal layer 20, so as to ensure the adhesion between molybdenum oxide and the metal material copper, and the second metal oxide layer 32 with high oxygen atoms is disposed on the first metal oxide layer 31, so as to ensure the low reflectivity of the display panel 100, thereby solving the problem of poor adhesion between molybdenum oxide and the metal material copper in the prior art, and improving the yield of the display panel 100.
The embodiment of the present invention further provides a preparation method of the display panel 100, where the preparation method includes the following specific preparation steps, as shown in fig. 6:
step S10) providing a substrate 10: an insulating substrate 10, which may be a glass substrate or a quartz substrate, is prepared. And the substrate 10 is cleaned.
Step S20) preparing the second metal oxide layer 32: the substrate 10 is placed in a deposition chamber, and argon and oxygen are introduced into the deposition chamber, wherein the flow ratio of the argon to the oxygen is larger than 10. When the volume ratio of argon to oxygen in the deposition chamber is greater than 10, a layer of molybdenum oxide with a thickness of 400-900 angstroms is deposited on a surface of the substrate 10 to form a second metal oxide layer 32 as shown in fig. 7. Wherein the oxygen atom content in the molybdenum oxide is greater than 1 and less than or equal to 3.
Step S30) preparing the first metal oxide layer 31: the substrate 10 is placed in the deposition chamber and the flow ratio of the argon gas and the oxygen gas is reduced to 0.1-1. When the volume ratio of argon gas to oxygen gas in the deposition chamber is 0.1-1, a layer of molybdenum oxide having a thickness of 10-200 angstroms is deposited on one surface of the substrate 10 on the second metal oxide layer 32 by a deposition method to form the first metal oxide layer 31 as shown in fig. 8. Wherein the oxygen atom content in the molybdenum oxide is less than 1.
Step S40) preparing the first metal layer 20: a layer of copper-containing metal material is prepared on a surface of the first metal oxide layer 31 away from the second metal oxide layer 32 by a deposition method or by an evaporation method to form the first metal layer 20, and finally the display panel 100 shown in fig. 9 is formed.
The embodiment of the invention provides a display panel 100 and a preparation method thereof. The display panel 100 improves the adhesion between the metal oxide layer 30 and the first metal layer 20 through the stacked design of the first metal oxide layer 31 with low oxygen atoms and the second metal oxide layer 32 with oxygen atoms, prevents the peeling and dropping between the metal oxide layer 30 and the first metal layer 20 caused by the subsequent high-temperature process, and improves the yield of the display panel 100. Also, the embodiment of the invention reduces one second metal layer 40 compared to embodiment 1, thereby reducing the total thickness of the display panel 100 while not affecting the adhesion between the first metal layer 20 containing metallic copper and the insulating substrate 10.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that various dependent claims and the features described herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (9)
1. A display panel, comprising:
a first metal layer;
two metal oxide layers which are laminated on one surface of the first metal layer;
in these metal oxide layers, the content of oxygen atoms of the metal oxide gradually decreases from the side away from the metal layer to the side close to the metal layer;
the metal oxide is molybdenum oxide;
when having two metal oxide layers, the display panel includes:
the first metal oxide layer is arranged on one surface of the first metal layer;
the second metal oxide layer is arranged on one surface of the first metal oxide layer, which is far away from the first metal layer;
wherein the number of oxygen atoms in the first metal oxide layer is less than or equal to 1, and the number of oxygen atoms in the second metal oxide layer is less than or equal to 3.
2. The display panel of claim 1, further comprising:
and the second metal layer is arranged on one surface of the first metal layer, which is far away from the metal oxide layer.
3. The display panel according to claim 1, wherein in the metal oxide layers, the thickness thereof is gradually reduced from a side away from the metal layer to a side close to the metal layer.
4. The display panel of claim 2,
the first metal layer comprises copper;
the second metal layer comprises molybdenum.
5. The preparation method of the display panel is characterized by comprising the following steps of:
providing a first metal layer;
forming at least two metal oxide layers which are arranged in a laminated manner on the first metal layer;
in these metal oxide layers, the content of oxygen atoms of the metal oxide gradually decreases from the side away from the metal layer to the side close to the metal layer;
the metal oxide is molybdenum oxide;
the step of forming at least two metal oxide layers stacked on the first metal layer comprises the following steps:
forming a first metal oxide layer on the first metal layer;
adjusting the flow ratio between argon and oxygen introduced into the deposition chamber;
forming a second metal oxide layer on a surface of the first metal oxide layer away from the first metal layer;
wherein the number of oxygen atoms in the first metal oxide layer is less than or equal to 1, and the number of oxygen atoms in the metal oxide in the second metal oxide layer is greater than 1 and less than or equal to 3.
6. The method for manufacturing a display panel according to claim 5, further comprising the steps of:
and forming a second metal layer on one surface of the first metal layer far away from the metal oxide layer.
7. The method for manufacturing a display panel according to claim 6,
the first metal layer comprises copper;
the second metal layer comprises molybdenum.
8. The method for manufacturing a display panel according to claim 5,
the step of forming a first metal oxide layer on the first metal layer comprises:
introducing argon and oxygen into a deposition chamber, and depositing a layer of metal oxide on one surface of the first metal layer by a sputtering deposition method to form the first metal oxide layer;
the step of forming a second metal oxide layer on a surface of the first metal oxide layer away from the first metal layer comprises:
introducing argon and oxygen into a deposition chamber, and depositing a layer of metal oxide on the surface of the first metal oxide layer away from the first metal layer by a sputtering deposition method to form a second metal oxide layer;
wherein, when the first metal oxide layer is deposited, the flow ratio of the argon to the oxygen is 0.1-1; and when the second metal oxide layer is deposited, the flow ratio of the argon to the oxygen is more than 10.
9. The method for manufacturing a display panel according to claim 8, wherein a thickness of the first metal oxide layer is smaller than a thickness of the second metal oxide layer.
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