CN112255896B - Multiple pattern hot spot optimization method - Google Patents
Multiple pattern hot spot optimization method Download PDFInfo
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- CN112255896B CN112255896B CN202011305476.8A CN202011305476A CN112255896B CN 112255896 B CN112255896 B CN 112255896B CN 202011305476 A CN202011305476 A CN 202011305476A CN 112255896 B CN112255896 B CN 112255896B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
The invention relates to a multiple pattern hot spot optimization method, which aims at multiple pattern hot spots in an initial splitting mode, re-splits patterns near the hot spots, influences the splitting mode of the whole layout after the splitting mode of the patterns near the hot spots is changed, evaluates the influence of different re-splitting modes on a hot spot process window and the influence of different re-splitting modes on the whole layout process window, and accordingly selects the optimal pattern splitting mode near the hot spots to improve the multiple pattern process window.
Description
Technical Field
The invention relates to a semiconductor integrated circuit process optimization technology, in particular to a multiple pattern hot spot optimization method.
Background
In the manufacturing process of a semiconductor integrated circuit, a graphic structure of a circuit is firstly defined on a Mask layout (Mask), and then the graphic structure, namely a design graph, on the Mask layout is transferred to a photoresist formed on the surface of a wafer through photoetching to form a photoresist graph. In the photolithography process, when the size of the pattern and the size of the wavelength of the photolithography are close to or even smaller, the pattern exposed on the photoresist and the pattern on the reticle layout are inconsistent due to the interference, diffraction, development and the like of light, and distortion of Optical Proximity Effect (OPE) is generated. Therefore, in order to form a required pattern on the photoresist, OPC correction needs to be performed on the pattern on the reticle layout, and although the size of the pattern on the reticle layout after OPC correction is not consistent with the requirement, the pattern on the photoresist after exposure transfer onto the photoresist is consistent with the requirement.
However, as the integration degree increases, the size of the pattern becomes smaller and smaller, the layout design becomes more and more complex, and the multiple patterning process has also been widely used. More and more hot spots are encountered in the OPC correction process, the hot spots are spots with various problems on the photoetching layout after OPC correction, and because the hot spot graphs are problematic graphs, the hot spot graphs need to be processed and can be eliminated after processing.
The hot spot pattern itself usually conforms to the design rule, but the process window, i.e. the photolithography process window, is smaller, i.e. the hot spot pattern becomes problematic and defective during photolithography when the photolithography process, e.g. light intensity or depth of focus, has smaller fluctuations. Due to the characteristics of the layout and the process, one layout is divided into a plurality of layers of layouts, and hot spots of the multiple patterns exist between one layer of layout and the plurality of layers of layouts simultaneously.
Disclosure of Invention
The invention provides a multiple-graph hotspot optimization method, which comprises the following steps: s1: providing an original design layout, and introducing an initial splitting mode, wherein the initial splitting mode splits a graph in the original design layout into a first mask graph positioned in a first mask and a second mask graph positioned in a second mask, and the initial splitting mode enables an initial hot spot to be generated in the original design layout; s2: re-splitting the graph near the initial hot spot to obtain a re-splitting mode different from the initial splitting mode; s3: evaluating the influence of the re-splitting mode on the hot spot process window and the influence of the whole layout process window; and S4: and determining an optimal splitting mode according to the evaluation of the S3.
Furthermore, the graphs near the initial hot spot in S2 are all graphs within a range of taking the initial hot spot as a center and taking d as a radius.
Further, d is between 3 and 7 times the sum of the minimum line width and the minimum pitch.
Further, d is 5 times the sum of the minimum line width and the minimum pitch.
Furthermore, in the step S2, the reticle is re-split into at least one first reticle pattern in the first reticle in the initial splitting mode and the second reticle.
Furthermore, in the step S2, the second reticle is re-split into at least one second reticle pattern in the second reticle in the initial splitting mode, and the second reticle pattern is divided into the first reticle.
Furthermore, in the step S2, the second reticle is split again into at least one second reticle pattern in the second reticle in the initial splitting mode and into the first reticle, and at the same time, at least one first reticle pattern in the first reticle in the initial splitting mode is split into the second reticle.
Further, the criteria for the evaluation in S3 include: a. whether the original hot spot process window is improved or not by the re-splitting mode; b. the re-splitting mode will not result in new hot spots; and c, the re-splitting mode is different from the initial splitting mode on the premise of meeting the two former splitting modes.
Furthermore, the optimal splitting mode is a re-splitting mode which improves the process window of the initial hot spot, does not cause a new hot spot and has the minimum difference with the initial splitting mode
Drawings
FIG. 1 is a flow chart of a multi-pattern hot spot optimization method.
FIG. 2 is a diagram of an original design layout.
FIG. 3 is a schematic diagram of dividing an original design layout by an initial splitting method.
Fig. 4a to 4g are schematic diagrams of a re-splitting manner except for an initial splitting manner.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and the same reference numerals denote the same elements throughout. It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under 823030," "under 8230; below," "under 8230," "under," "over," and the like may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "at 8230, below" and "at 8230, below" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In an embodiment of the present invention, a method for optimizing multiple pattern hotspots is provided, please refer to a flowchart of the method for optimizing multiple pattern hotspots shown in fig. 1, including: s1: providing an original design layout, and introducing an initial splitting mode, wherein the initial splitting mode splits a graph in the original design layout into a first mask graph positioned in a first mask and a second mask graph positioned in a second mask, and the initial splitting mode enables an initial hot spot to be generated in the original design layout; s2: re-splitting the graph near the initial hot spot to obtain a re-splitting mode different from the initial splitting mode; s3: evaluating the influence of the re-splitting mode on the hot spot process window and the influence of the whole layout process window; and S4: and determining an optimal splitting mode according to the evaluation of the S3.
Specifically, the method for optimizing the hot spot of the multiple graphics according to an embodiment of the present invention includes:
s1: providing an original design layout, and introducing an initial splitting mode, wherein the initial splitting mode splits a graph in the original design layout into a first mask graph positioned in a first mask and a second mask graph positioned in a second mask, and the initial splitting mode enables an initial hot spot to be generated in the original design layout;
specifically, referring to fig. 2, fig. 2 is a schematic diagram of an original design layout, and as shown in fig. 2, the original design layout 100 includes graphs 01, 02, 03, 04, 05, and 06. Referring to fig. 3, fig. 3 is a schematic diagram of dividing an original design layout by an initial splitting method, and as shown in fig. 3, the patterns 01, 02, and 04 are split into patterns located in a first mask to form a first mask pattern, and the patterns 03, 05, and 06 are split into patterns located in a second mask to form a second mask pattern. And as shown in fig. 3, the area 110 is the location of the initial hot spot, which is generated due to the insufficient process windows of the patterns 01 and 02 on the same reticle.
S2: re-splitting the graph near the initial hot spot to obtain a re-splitting mode different from the initial splitting mode;
specifically, in an embodiment of the present invention, the graphs near the initial hot spot are all graphs within a range that takes the initial hot spot as a center and takes d as a radius. Further, in one embodiment, d is between 3 and 7 times the sum of the minimum line width and the minimum pitch. Preferably, d is 5 times the sum of the minimum line width and the minimum pitch.
The re-splitting needs to satisfy the splitting rule of the layer, and for the original design layout shown in fig. 2, a re-splitting manner diagram except the initial splitting manner shown in fig. 4a to 4g may be generated. As shown in fig. 4a, the patterns 01, 02, 04, and 06 are separated and positioned in a first reticle to form a first reticle pattern, and the patterns 03 and 05 are separated and positioned in a second reticle to form a second reticle pattern. As shown in fig. 4b, the patterns 02 and 04 are separated and positioned in a first reticle to form a first reticle pattern, and the patterns 01, 03, 05, and 06 are separated and positioned in a second reticle to form a second reticle pattern. As shown in fig. 4c, the patterns 02, 04, and 06 are split into patterns located in a first reticle to form a first reticle pattern, and the patterns 01, 03, and 05 are split into patterns located in a second reticle to form a second reticle pattern. As shown in fig. 4d, the patterns 01, 03, and 05 are separated into a first reticle pattern and located in a first reticle, and the patterns 02, 04, and 06 are separated into a second reticle pattern and located in a second reticle. As shown in fig. 4e, the patterns 01, 03, 05, and 06 are separated to be located in a first reticle to form a first reticle pattern, and the patterns 02 and 04 are separated to be located in a second reticle to form a second reticle pattern. As shown in fig. 4f, the patterns 03 and 05 are separated into a first reticle pattern located in a first reticle, and the patterns 01, 02, 04, and 06 are separated into a second reticle pattern located in a second reticle. As shown in fig. 4g, the patterns 03, 05, and 06 are divided to be located in a first reticle to form a first reticle pattern, and the patterns 01, 02, and 04 are divided to be located in a second reticle to form a second reticle pattern. Specifically, the splitting is performed again to divide at least one first mask graph in the first mask in the initial splitting mode into a second mask; re-splitting into dividing at least one second mask plate graph in the second mask plate in the initial splitting mode into the first mask plate; or splitting the mask again into a mode of dividing at least one second mask graph in the second mask in the initial splitting mode into the first mask and simultaneously dividing at least one first mask graph in the first mask in the initial splitting mode into the second mask. Therefore, after the pattern splitting mode near the initial hot spot is changed, the splitting mode of the whole layout is influenced.
S3: evaluating the influence of the re-splitting mode on the hot spot process window and the influence of the whole layout process window;
specifically, in one embodiment, the evaluation criteria include: a. whether the initial hot spot process window is improved or not by the re-splitting mode; b. the re-splitting mode will not cause new hot spots; and c, the re-splitting mode is different from the initial splitting mode on the premise of meeting the two former splitting modes.
S4: and determining an optimal splitting mode according to the evaluation of the S3.
Specifically, in an embodiment, the optimal splitting manner is a re-splitting manner that improves an initial hotspot process window, does not cause a new hotspot, and has a minimum difference from the initial splitting manner.
Specifically, as shown in fig. 4a to 4g, the area 120 indicates that the re-splitting mode improves the initial hot spot process window, and the area 110 is the position of the hot spot. Wherein, the re-splitting mode shown in fig. 4a does not satisfy the evaluation criterion a and does not satisfy the evaluation criterion b; the re-splitting pattern shown in fig. 4b satisfies evaluation criterion a and evaluation criterion b; the re-splitting pattern shown in FIG. 4c satisfies evaluation criterion a and does not satisfy evaluation criterion b; the repartitioning approach shown in FIG. 4d satisfies the evaluation criterion a and does not satisfy the evaluation criterion b; the repartitioning approach shown in FIG. 4e satisfies evaluation criterion a and evaluation criterion b; the repartitioning approach shown in FIG. 4f does not satisfy the evaluation criterion a, does not satisfy the evaluation criterion b; the re-splitting pattern shown in fig. 4g does not satisfy the evaluation criterion a and satisfies the evaluation criterion b. In the seven re-splitting modes, only the re-splitting modes shown in fig. 4b and fig. 4e simultaneously satisfy the evaluation criterion a and the evaluation criterion b, and according to the evaluation criterion c, the re-splitting mode shown in fig. 4b has the smallest difference from the initial splitting mode, so that the re-splitting mode shown in fig. 4b is the optimal splitting mode and is selected as the final splitting mode for the original design mask. And the re-splitting mode of fig. 4b can improve the initial hot spot process window, does not cause new hot spots, and has a small difference from the initial splitting mode only by optimizing the splitting mode.
Aiming at multiple pattern hot spots in the initial splitting mode, the patterns near the hot spots are re-split, the splitting mode of the whole layout is influenced after the splitting mode of the patterns near the hot spots is changed, the influence of different re-splitting modes on a hot spot process window and the influence of different re-splitting modes on the whole layout process window are evaluated, so that the best splitting mode of the patterns near the hot spots is selected, and the multiple pattern process window is improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. A multi-graph hotspot optimization method is characterized by comprising the following steps:
s1: providing an original design layout, and introducing an initial splitting mode, wherein the initial splitting mode splits a graph in the original design layout into a first mask graph positioned in a first mask and a second mask graph positioned in a second mask, and the initial splitting mode enables an initial hot spot to be generated in the original design layout;
s2: re-splitting the graph near the initial hot spot to obtain a re-splitting mode different from the initial splitting mode;
s3: evaluating the influence of the re-splitting mode on the hot spot process window and the influence of the whole layout process window; and
s4: determining an optimal splitting mode according to the evaluation of the S3; wherein the splitting in S2 is as follows: dividing at least one first mask graph in the first mask in the initial splitting mode into a second mask; or dividing at least one second mask graph in the second mask in the initial splitting mode into the first mask, and simultaneously dividing at least one first mask graph in the first mask in the initial splitting mode into the second mask.
2. The multi-pattern hot spot optimization method of claim 1, wherein the patterns near the initial hot spot in S2 are all patterns within a range of a radius of d with the initial hot spot as a center.
3. The multi-pattern hot-spot optimization method of claim 2, wherein d is between 3 and 7 times the sum of the minimum line width and the minimum pitch.
4. The multi-pattern hot spot optimization method of claim 3, wherein d is 5 times the sum of the minimum line width and the minimum pitch.
5. The multi-pattern hotspot optimization method of claim 1, wherein the evaluation criteria in S3 comprise: a. whether the original hot spot process window is improved or not by the re-splitting mode; b. the re-splitting mode will not result in new hot spots; and c, the re-splitting mode is different from the initial splitting mode on the premise of meeting the two former splitting modes.
6. The multi-pattern hotspot optimization method of claim 1, wherein the optimal splitting pattern is a re-splitting pattern that is improved with respect to an initial hotspot process window, does not result in new hotspots, and has minimal difference from the initial splitting pattern.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8464194B1 (en) * | 2011-12-16 | 2013-06-11 | International Business Machines Corporation | Machine learning approach to correct lithographic hot-spots |
| CN109061999A (en) * | 2018-09-12 | 2018-12-21 | 上海华力集成电路制造有限公司 | It estimates the method for potential hot spot and increases the method for hot spot process window |
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| US8473875B2 (en) * | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
| US20160154922A1 (en) * | 2014-12-01 | 2016-06-02 | Globalfoundries Inc. | Optical proximity correction taking into account wafer topography |
| CN107844033B (en) * | 2017-09-30 | 2020-02-21 | 上海华力微电子有限公司 | Method for correcting global metal layer process hot spots |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8464194B1 (en) * | 2011-12-16 | 2013-06-11 | International Business Machines Corporation | Machine learning approach to correct lithographic hot-spots |
| CN109061999A (en) * | 2018-09-12 | 2018-12-21 | 上海华力集成电路制造有限公司 | It estimates the method for potential hot spot and increases the method for hot spot process window |
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