CN112250443A - Multiphase coupling low-temperature preparation method of ultrahigh-temperature ceramic coating - Google Patents
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Abstract
The invention relates to a multiphase coupling low-temperature preparation method of an ultrahigh-temperature ceramic coating, which is characterized in that a ceramic precursor is used as a raw material, a precursor pyrolysis product and the precursor are mixed to prepare slurry, and the precursor in the slurry is cracked in the temperature rise process (namely, in a low-pressure state) of deposition by combining a CVD (chemical vapor deposition) process, so that a compact film capable of being used at high temperature is prepared. The volume of the pyrolysis product in the slurry can not shrink at high temperature, so that the volume shrinkage of the slurry can be reduced to a certain extent, and cracking is reduced; when the ceramic precursor is cracked under low pressure, the micromolecular gas-phase products can escape more quickly without accumulating in the ceramic, so that the occurrence of internal holes can be reduced; the CVD process can seal microcracks generated in the cracking process of the precursor, and the integrity of the coating is ensured.
Description
Technical Field
The invention belongs to the technical field of preparation of surface coatings, and relates to a multiphase coupling low-temperature preparation method of an ultrahigh-temperature ceramic coating, in particular to design and a preparation method of a compact high-temperature resistant ceramic coating based on the surface of an ultrahigh-temperature material.
Background
The Environmental Barrier Coatings (EBCs) can establish a protective barrier for high thrust-weight ratio aircraft engines, gas turbines, advanced rocket engines and the like in a high-temperature gas environment, effectively prevent or weaken corrosion of corrosive media such as water oxygen, molten salt and the like in the gas environment on hot end parts, enable the hot end parts to be safely and reliably in service in complex environments such as high-temperature high-speed airflow, water oxygen, molten salt and the like, and prolong the service time of devices.
SiBCN ceramics are generally amorphous or nanocrystalline structures and have good high temperature stability, strong creep resistance, low density (about 1.8g/cm3), and low thermal expansion coefficient (3 x 10)-6The amorphous structure has excellent performances of low thermal conductivity (about 3W/m.K) and the like, and the amorphous structure can be maintained at 1700-1800 ℃. And the SiBCN ceramic has good oxidation resistance, is one of non-oxide ceramic materials with the lowest oxidation rate, Weinmann [2 ]]TG analysis on SiBCN ceramic shows that the SiBCN ceramic has almost no quality change under oxygen environment at 1700 ℃, and SiC and Si3N4The ceramic has obvious weight gain, and the SiBCN ceramic is considered to have more excellent oxidation resistance. The SiBCN blocky ceramic is prepared at a lower temperature (about 1000 ℃) by a polymer-converted ceramic method. Feng [3 ]]And preparing a compact SiBCN coating at 1300 ℃ by using PBSZ as a precursor.
SiOC precursor ceramics are the earliest silicon-based ceramics, have wide raw material sources, low price, high yield, simple preparation, easy storage, and can prepare large and complex parts, and have been studied for many years and widely used. However, the yield of SiOC precursor ceramic is low, carbothermic reduction reaction starts to occur at around 1300 ℃, and the durability at high temperature is insufficient, limiting its application in severe environment. The high-temperature stability of the SiOC-based precursor ceramic can be effectively improved by doping elements such as boron, nitrogen, zirconium, hafnium and the like into the SiOC precursor ceramic, wherein the high-temperature oxidation resistance of the SiOC-based precursor ceramic can be remarkably improved by introducing the boron element. Numerous studies have shown that2The addition of a silicon-based second phase can significantly improve the silicon-free HfC or HfB2Including SiC/HfC, SiC/HfB2, or SiC/HfC/HfB2A composite material. Therefore, we consider new SiHfBCN amorphous ceramics and their nanocomposites as promising candidates in ultra-high temperature applications. Electrically insulating and optically transparent prepared by pulsed reactive magnetron sputteringAmorphous Hf of7B23Si17C4N45Film(s)[1]Since the nanocomposite protective oxide layer (containing HfO) can be formed on the surface at 1000 ℃ or higher2SiO of nanoparticles2Amorphous matrix) that exhibits excellent oxidation resistance in air up to 1600 c and is useful as a temperature protective coating for electronic and optical components at high temperatures.
The preparation method of the EBCs coating mainly comprises the following steps: plasma Spray Deposition (PSD), Electron Beam Physical Vapor Deposition (EB-PVD), Sol-Gel (Sol-Gel), Slurry impregnation (Slurry and Dipping), Chemical Vapor Deposition (CVD), and Polymer-modified Ceramics (PDCs), among others.
The polymer-converted ceramic method has the advantages of simple process equipment, low coating sintering temperature, capability of preparing coatings on the surfaces of substrates in various shapes and the like, and the method has the main defect that the polymer generates larger volume shrinkage due to volatilization of small molecular gases and increase of product density in the process of curing and cracking, so that a more compact coating is difficult to obtain. The chemical vapor deposition method has the advantages of uniform and compact coating, firm combination with the matrix, easy control of film components, stable film quality and high deposition rate. However, the method has high requirements on equipment, long preparation period, high production cost and long common period.
[1]P.Zeman,S.Zuzjakova,P.Mares,et al.Superior high-temperature oxidation resistance of magnetron sputtered Hf-B-Si-C-N film[J].Ceramics International,2016,42(4): 4853-4859.
[2]Weinmann M,Schuhmacher,Kummer H,et al.Synthesis and Thermal Behavior of Novel Si-B-C-N Ceramic Precursors[J].Chemistry of Materials,2000,12(3).
[3]Feng Z L,Guo Z M,Lu B,et al.Preparation and Thermal Cycling Resistance of SiBCN(O)Coating[J].Key Engineering Materials,2014,602-603:393-396.
Disclosure of Invention
Technical problem to be solved
In order to avoid the defects of the prior art, the invention provides a multiphase coupling low-temperature preparation method of an ultrahigh-temperature ceramic coating.
Technical scheme
A multiphase coupling low-temperature preparation method of an ultrahigh-temperature ceramic coating is characterized by comprising the following steps:
step 1: preparing a ceramic precursor, a precursor pyrolysis product and tetrahydrofuran into slurry according to the mass ratio of 1: 0.01-5: 0-5, coating the slurry on a substrate, heating to 100-200 ℃ at the heating rate of 2-10 ℃/min, and curing in argon for 2-5h to preliminarily prepare a ceramic coating;
step 2: in the temperature rising process of the CVD process, the deposition is carried out according to the deposition parameters of the ceramic; and (3) cracking the pyrolysis product of the ceramic precursor, and finishing additive cracking and ceramic formation of the ceramic precursor while depositing the ceramic coating so as to inhibit the shrinkage of the self-healing layer, finally finishing the preparation of the compact ceramic coating and reducing cracks and holes in the coating prepared at low temperature.
The ceramic precursor includes, but is not limited to, PSNB, PCS, or PBSZ.
Advantageous effects
The invention provides a multiphase coupling low-temperature preparation method of an ultrahigh-temperature ceramic coating, which is characterized in that a ceramic precursor is used as a raw material of the coating, a precursor pyrolysis product and the precursor are mixed to prepare slurry, and the precursor in the slurry is cracked in the temperature rise process (namely, in a low-pressure state) of deposition by combining a CVD (chemical vapor deposition) process, so that a compact film capable of being used at high temperature is prepared. The volume of the pyrolysis product in the slurry can not shrink at high temperature, so that the volume shrinkage of the slurry can be reduced to a certain extent, and cracking is reduced; when the ceramic precursor is cracked under low pressure, the micromolecular gas-phase products can escape more quickly without accumulating in the ceramic, so that the occurrence of internal holes can be reduced; the CVD process can seal microcracks generated in the cracking process of the precursor, and the integrity of the coating is ensured.
The multiphase coupling low-temperature preparation method of the ultrahigh-temperature ceramic coating provided by the invention has the main advantages that: the prepared ceramic coating has excellent high temperature resistance, a compact coating can be prepared at a lower temperature, the high temperature resistance of the substrate is improved, the service life of the substrate is prolonged, the process is simple, and the repeatability is good.
The PDC and the CVD are combined together, solidified precursor powder is mixed in slurry of the PDC, and a coating which can be used at an ultrahigh temperature is prepared by adopting the effect of inhibiting ceramic shrinkage through gas-liquid-solid multiphase coupling. Selecting proper pyrolysis atmosphere, pressure and time according to the characteristics of the PDC and CVI processes; selecting a pyrolysis temperature range according to a thermogravimetric curve of the precursor; after cross-linking for 2 hours at 170 ℃ in a drying oven, pyrolyzing the precursor for different times by using a high-temperature tube furnace at different temperatures, different atmospheres and different pressures, and then determining the element proportion, the component distribution and the microstructure characteristics of the pyrolysis product by using EDS, NMR, XPS, XRD, SEM and other means for analysis and test, and determining the process parameter range of complete pyrolysis of different precursors. And (3) comparing contact angles of different precursor stock solutions and the solution mixed and diluted with tetrahydrofuran according to different proportions on the surface of the CVD SiC ceramic, and controlling the proportion of gas phase and solid phase.
The SiHfBCN coating is prepared on the surface of the C/SiC composite material by the method, as shown in figure 1(a), the coating weight loss is not obvious at 1200 ℃, the weight loss is maintained at a better degree at 1300 ℃, and the coating shows a continuous weight loss trend along with the extension of time when oxidized in air at 1400 ℃. As shown in FIG. 1(b), after oxidation in air at 1300 ℃ for 10h, a relatively dense oxide film is formed on the surface of the ceramic, which is beneficial to improving the oxidation resistance of the ceramic, and the prepared SiHfBCN coating can be used at 1300 ℃.
Drawings
FIG. 1: mass change curves in air at different temperatures for (a) preparation of SiHfBCN coatings by PDC in combination with CVD; (b) the appearance of the composite material after being oxidized for 10 hours in air at 1300 ℃;
FIG. 2: the surface appearance and the section appearance of the SiBCN ceramic coating prepared on the YCOB surface by combining PDC with CVD;
FIG. 3: the surface appearance of the SiHfBCN ceramic coating prepared on the SiC surface by combining the PDC with the CVD;
FIG. 4: surface morphology of SiHfBCN ceramic coating prepared on SiC surface by combining PDC with CVD
Detailed Description
The invention will now be further described with reference to the following examples and drawings:
example one
The method comprises the following steps: sequentially placing the YCOB substrate in acetone, alcohol and distilled water, respectively carrying out ultrasonic cleaning for about ten minutes, and then drying at normal temperature;
step two: pyrolysis products of PSNB0, tetrahydrofuran and PSNB0 were purified as PSNB 0: tetrahydrofuran: PSNB0 pyrolysis product (mass ratio) 1: 2: 3, diluting, stirring uniformly, dispersing uniformly by ultrasonic, and storing in a dark and sealed manner;
step three: uniformly brushing the slurry on a substrate by using a superfine pappus brush, standing for half an hour in vacuum, and waiting for the surface to be uniformly spread;
step four: placing the coated YCOB substrate in a graphite crucible, and placing the graphite crucible in a SiBCN deposition furnace in an atmosphere of MTS-BCl3-NH3-H2And Ar, carrying out pyrolysis of PSNB while carrying out chemical vapor deposition of SiBCN to obtain a SiBCN coating, wherein the temperature is 950 ℃ and the time is 2 h.
The thickness of the SiBCN coating prepared in the example 1 is 1um, and the YCOB/BN/SiBCN composite material prepared by combining the PDC and the CVD has a smooth surface and does not have obvious cracks and holes. Wherein the morphology of the cauliflower-like spherical particles on the surface is the morphology of a SiBCN coating deposited by a typical CVD method.
Example two
The method comprises the following steps: sequentially placing the SiC ceramic substrate in acetone, alcohol and distilled water, respectively carrying out ultrasonic cleaning for about ten minutes, and then drying at normal temperature;
step two: the pyrolysis products of PSNBHf, tetrahydrofuran and PSNBHf were mixed at PSNBHf: tetrahydrofuran: psnbbf pyrolysis product (mass ratio) 1: 1: diluting at a ratio of 0.1, stirring uniformly, dispersing uniformly by ultrasonic, and storing in a dark and sealed manner;
step three: uniformly brushing the slurry on a substrate by using a superfine pappus brush, standing for half an hour in vacuum, and waiting for the surface to be uniformly spread;
step four: and (3) placing the coated SiC ceramic substrate in a graphite crucible, placing the graphite crucible in a SiC deposition furnace in the atmosphere of MTS-H2-Ar, and performing pyrolysis of PSNBHF while performing chemical vapor deposition on SiC to obtain a SiHfBCN coating, wherein the temperature is 1000 ℃ and the time is 2H.
FIG. 3 is a surface topography of a complex phase ceramic coating prepared using the above process. It can also be seen in fig. 3 that the smaller size cracks have been encapsulated by CVD SiC (as shown by the black boxes in fig. 3), indicating that the CVI process encapsulates small pores in the material, enabling gas-liquid-solid multiphase coupled densification. It can also be seen in fig. 3 that the CVD SiC completely encapsulated the surface of the PDC SiHfBCN ceramic, demonstrating the good permeability of the chemical vapor deposition process employed in this patent.
EXAMPLE III
The method comprises the following steps: sequentially placing the SiC ceramic substrate in acetone, alcohol and distilled water, respectively carrying out ultrasonic cleaning for about ten minutes, and then drying at normal temperature;
step two: the pyrolysis products of PSNBHf, tetrahydrofuran and PSNBHf were mixed at PSNBHf: tetrahydrofuran: psnbbf pyrolysis product (mass ratio) 1: 1: diluting at a ratio of 0.15, stirring, ultrasonically dispersing, and storing in dark and sealed condition;
step three: uniformly brushing the slurry on a substrate by using a superfine pappus brush, standing for half an hour in vacuum, and waiting for the surface to be uniformly spread;
step four: and (3) placing the coated SiC ceramic substrate in a graphite crucible, placing the graphite crucible in a SiC deposition furnace in the atmosphere of MTS-H2-Ar, and performing pyrolysis of PSNBHF while performing chemical vapor deposition on SiC to obtain a SiHfBCN coating, wherein the temperature is 1000 ℃ and the time is 2H.
Fig. 4 shows the surface morphology of the complex phase ceramic coating prepared by the above process, and it can be found that the volume shrinkage of the precursor is greatly reduced, and the PDC SiHfBCN ceramic powder can be found on the surface of the pyrolysis product, which fully illustrates that the introduction of the PDC SiHfBCN ceramic powder improves the degree of densification of the ceramic layer.
Claims (4)
1. A multiphase coupling low-temperature preparation method of an ultrahigh-temperature ceramic coating is characterized by comprising the following steps:
step 1: preparing a ceramic precursor, a precursor pyrolysis product and tetrahydrofuran into slurry according to the mass ratio of 1: 0.01-5: 0-5, coating the slurry on a substrate, heating to 100-200 ℃ at the heating rate of 2-10 ℃/min, and curing in argon for 2-5h to preliminarily prepare a ceramic coating;
step 2: in the temperature rising process of the CVD process, the deposition is carried out according to the deposition parameters of the ceramic; and (3) cracking the pyrolysis product of the ceramic precursor, and finishing additive cracking and ceramic formation of the ceramic precursor while depositing the ceramic coating so as to inhibit the shrinkage of the self-healing layer, finally finishing the preparation of the compact ceramic coating and reducing cracks and holes in the coating prepared at low temperature.
2. The multiphase coupling low-temperature preparation method of the ultrahigh-temperature ceramic coating according to claim 1, characterized by comprising the following steps of: the ceramic precursor includes, but is not limited to, PSNB, PCS, or PBSZ.
3. The multiphase coupling low-temperature preparation method of the ultrahigh-temperature ceramic coating according to claim 1, characterized by comprising the following steps of: and (2) when the ceramic precursor adopts PSNB and precursor pyrolysis products thereof and the substrate is YCOB, carrying out the CVD process in the step 2: placing the ceramic coating substrate in a graphite crucible, and placing the graphite crucible in a SiBCN deposition furnace in an atmosphere of MTS-BCl3-NH3-H2And Ar, carrying out pyrolysis of PSNB while carrying out chemical vapor deposition of SiBCN to obtain a SiBCN coating, wherein the temperature is 950 ℃ and the time is 2 h.
4. The multiphase coupling low-temperature preparation method of the ultrahigh-temperature ceramic coating according to claim 1, characterized by comprising the following steps of: the ceramic precursor adopts PSNBHF and precursor pyrolysis products thereof, and when the substrate is SiC ceramic, the CVD process of the step 2 comprises the following steps: performing pyrolysis of PSNBHF (hydrogen sulfide Bronsted boron hydride) and chemical vapor deposition of SiC under the atmosphere of MTS-H2-Ar to obtain a SiHfBCN coating at the temperature of 1000 ℃ for 2 hours.
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