CN112242450B - Diode device and manufacturing method thereof - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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Abstract
A diode device and its manufacturing method, its structure includes the diode chip, the first metal electrode layer located on upper surface of the diode chip, the second metal electrode layer located on its lower surface, have via holes in the thickness direction which runs through diode chip and first metal electrode layer, there are conducting posts inside the via hole, the conducting post is electrically connected with second metal electrode layer; the outer side wall of the conductive column is provided with an insulating layer which is used for insulating and isolating the diode chip and the first metal electrode layer. Because the hole is formed in the middle of the diode chip or the area deviated from the center, the anode or the cathode is led out to the other surface of the chip from the hole through the conductive column, and the anode and the cathode of the chip are positioned on the same surface, so that the packaging size of the product is saved, the surface mount packaging of the product is realized, the PCB occupation area of the device is reduced, and the PCB mounting efficiency is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a diode device and a manufacturing method thereof.
Background
PN junctions have unidirectional conductivity and are a property utilized by many devices in electronics, and commonly used semiconductor devices such as semiconductor diodes are based on PN junctions. With the development of Integrated Circuits (ICs), the semiconductor industry has experienced rapid growth due to continued improvements in the integration density of individual semiconductor devices (e.g., transistors, diodes, resistors, capacitors, etc.). In most cases, this improvement in integration density comes from the ever-decreasing minimum feature size, which allows more components to be integrated into a given area. In the application process, more and more electronic semiconductor devices need to be integrated on the same PCB, so in the manufacturing process of the semiconductor devices, the convenience of mounting the semiconductor devices on the PCB needs to be considered, the application efficiency of the PCB needs to be improved as much as possible, and the waste of the area needs to be reduced. Present diode chip is in the encapsulation, because two electrodes of diode chip establish respectively at the both ends of diode chip, consequently, in the encapsulation, often need follow diode chip one end welding lead to the other end to make this diode chip be connected to in the circuit and weld on the PCB board, however, through the mode of welding connection lead like this, complicated, insecure, and can waste the usable floor area of PCB board, reduced PCB board paster efficiency.
Therefore, it is desirable to provide a diode device, which can improve the efficiency of PCB board mounting and avoid wasting the usable area of the PCB board when the chip is packaged and applied.
Disclosure of Invention
The invention [ A1] provides a diode device, which is convenient for being attached to a PCB (printed circuit board) when the chip is packaged and applied, improves the PCB attaching efficiency and avoids wasting the use area of the PCB.
According to a first aspect, there is provided in an embodiment a diode device comprising:
the LED chip comprises a diode chip, wherein a first metal electrode layer covers the upper surface of the diode chip, and a second metal electrode layer covers the lower surface of the diode chip; the area of the first metal electrode layer is larger than that of the upper surface; the area of the second metal electrode layer is larger than that of the lower surface;
a through hole is formed in the thickness direction of the diode chip and the first metal electrode layer in a penetrating mode, a conductive column is arranged inside the through hole, and the conductive column is electrically connected with the second metal electrode layer; the outer side wall of the conductive column is provided with an insulating layer which is used for insulating and isolating the diode chip and the first metal electrode layer.
In some embodiments, the upper end of the conductive pillar is higher than the surface of the first metal electrode layer.
In some embodiments, the via size is 1/5-1/20 of the diode die size.
In some embodiments, the diode chip further comprises an encapsulation layer, the encapsulation layer wraps around the diode chip, part or all of the upper surface of the first metal electrode layer is exposed, and part or all of the lower surface of the second metal electrode layer is exposed.
In some embodiments, the conductive pillar is made of metal, and the bottom of the conductive pillar is screwed and fixed with the second metal electrode layer.
In some embodiments, the diode chip is a unidirectional or bidirectional TVS, semiconductor discharge tube, or rectifier diode chip.
According to a second aspect, an embodiment provides a method of manufacturing a diode device, comprising:
providing a diode chip having an upper surface and a lower surface opposite thereto;
presetting a through hole position, and forming a first through hole penetrating through the diode chip at the preset through hole position;
welding a first metal electrode layer on the upper surface, and welding a second metal electrode layer on the lower surface;
opening the first metal electrode layer to form a second through hole penetrating through the first metal electrode layer, wherein the position of the second through hole is consistent with that of the first through hole, and the first through hole and the second through hole form a through hole penetrating through the first metal electrode layer and the diode chip;
leading out a conductive column from the second metal electrode layer from the inside of the through hole, wherein the diameter of the conductive column is smaller than that of the through hole;
and filling an insulating material in a gap between the conductive column and the through hole to form an insulating layer so as to insulate and isolate the conductive column, the diode chip and the first metal electrode layer.
In some embodiments, the step of leading out the conductive pillar from the second metal electrode layer through the through hole includes: manufacturing a screw hole on the second metal electrode layer at the position of the preset through hole; and screws corresponding to the screw holes are manufactured at the connecting end parts of the conductive columns and the second metal electrode layer, and the conductive columns and the second metal electrode layer are fixedly connected in a screwing mode.
In some embodiments, the height of the upper end of the conductive pillar above the surface of the first metal electrode layer is adjusted by adjusting the screw depth of the conductive pillar.
In some embodiments, forming a first via through the diode chip at a predetermined via location includes:
forming a graphical photoresist layer on the upper surface, and forming a first through hole penetrating in the thickness direction of the diode chip by using the graphical photoresist layer as a mask and using an acid corrosion mode;
alternatively, the first and second electrodes may be,
and cutting at the preset through hole position by using a laser cutting method, and forming a through first through hole in the thickness direction of the diode chip.
According to the diode device and the manufacturing method thereof of the embodiment, the hole is formed in the middle or the area deviated from the center of the diode chip, the positive electrode or the negative electrode is led out to the other surface of the chip from the hole through the conductive column, so that the positive electrode and the negative electrode of the chip are positioned on the same surface, the packaging size of the product is saved, the surface mount packaging of the product is realized, the PCB occupation area of the device is reduced, and the PCB mounting efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a device structure provided in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a device structure provided in another embodiment of the present invention;
FIG. 3 is a schematic diagram of a device structure provided in yet another embodiment of the present invention;
FIG. 4 is a schematic diagram of a device structure provided in yet another embodiment of the present invention;
FIG. 5 is a flow chart of a method of fabricating a device provided in an embodiment of the present invention;
FIG. 6 is a partial schematic structural diagram of a device manufacturing step provided in an embodiment of the present invention;
FIG. 7 is a partial schematic diagram of a device manufacturing step provided in an embodiment of the present invention;
fig. 8 is a partial step structure diagram of a device manufacturing step provided in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. Wherein like elements in different embodiments are numbered with like associated elements. In the following description, numerous details are set forth in order to provide a better understanding of the present application. However, those skilled in the art will readily recognize that some of the features may be omitted or replaced with other elements, materials, methods in different instances. In some instances, certain operations related to the present application have not been shown or described in detail in order to avoid obscuring the core of the present application from excessive description, and it is not necessary for those skilled in the art to describe these operations in detail, so that they may be fully understood from the description in the specification and the general knowledge in the art.
Furthermore, the features, operations, or characteristics described in the specification may be combined in any suitable manner to form various embodiments. Also, the various steps or actions in the method descriptions may be transposed or transposed in order, as will be apparent to one of ordinary skill in the art. Thus, the various sequences in the specification and drawings are for the purpose of describing certain embodiments only and are not intended to imply a required sequence unless otherwise indicated where such sequence must be followed.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings).
Because when external lines are connected and packaged, a lead wire is welded to the other end from one end of the diode chip, so that the diode chip is connected to a circuit and integrated on a PCB, when the lines are connected to an external circuit, connecting lines are complex and insecure, the PCB pasting efficiency is reduced, the external lines are welded on the PCB, the area of the PCB is occupied, and certain waste is caused to the using area of the PCB.
In the embodiment of the invention, the provided diode device and the manufacturing method thereof comprise a diode chip, a first metal electrode layer and a second metal electrode layer which respectively cover the upper surface and the lower surface of the diode chip, and a conductive column which is arranged in the thickness direction of the diode chip and the first metal electrode layer and is electrically connected with the second metal electrode layer, wherein the conductive column leads out the anode or the cathode and leads out from the inside of the diode chip, so that the anode and the cathode of the diode chip can be positioned on the same surface, the size of the device package is saved, the device can be directly mounted on a PCB in a mounting mode, the mounting efficiency of the PCB is improved, the occupied space of the PCB is saved, and the integration of the device mounting in each device can be improved.
Referring to fig. 1 to 4, the present embodiment provides a diode device, which includes a diode chip 100, where the diode chip 100 may be a unidirectional or bidirectional TVS chip, a semiconductor discharge tube, or a common rectifying diode chip. The diode chip may be a mesa structure or a planar type structure. For example, fig. 1 and 4 are schematic diagrams illustrating a packaging structure of a diode chip with a bidirectional double-mesa structure, fig. 2 is a schematic diagram illustrating a packaging structure of a diode chip with a bidirectional planar structure, and fig. 3 is a schematic diagram illustrating a packaging structure of a diode chip with a unidirectional planar structure.
The upper surface of the diode chip 100 is covered with a first metal electrode layer 101, and the lower surface of the diode chip 100 is covered with a second metal electrode layer 102; the first metal electrode layer 101 and the second metal electrode layer 102 are respectively an anode or a cathode of the diode chip 100, for example, the first metal electrode layer 101 is the anode of the diode chip 100, and the second metal electrode layer 102 is the cathode of the diode chip 100. When the diode is packaged, the anode and the cathode can be directly reserved for being connected with an external circuit.
The first metal electrode layer 101 and the second metal electrode layer 102 are conductive metals, which may be copper or silver-plated copper, and in some embodiments, the first metal electrode layer 101 and the second metal electrode layer 102 are molybdenum sheets or flexible metal sheets. The first metal electrode layer 101 and the second metal electrode layer 102 are soldered on the upper surface and the lower surface by solder. The first metal electrode layer 101 and the second metal electrode layer 102 have electric conduction and heat conduction functions, so that current and heat can be rapidly and uniformly dispersed, current and heat concentration is avoided, meanwhile, the metal material has certain mechanical hardness, and the chip can be prevented from being damaged due to external force when being wrapped outside the chip.
The thickness of the first metal electrode layer 101 and the second metal electrode layer 102 may be 0.2mm to 1.5 mm.
In this embodiment, the area of the first metal electrode layer 101 is larger than that of the upper surface, and the area of the second metal electrode layer 102 is larger than that of the lower surface. The first metal electrode layer 101 and the second metal electrode layer 102 are metal sheets, and the area of the metal sheets is larger than that of the diode chip 100, so that heat dissipation of the electrodes is facilitated.
A through hole 200 is formed in the thickness direction penetrating the diode chip 100 and the first metal electrode layer 101, a conductive pillar 300 is disposed in the through hole 200, and the conductive pillar 300 is electrically connected to the second metal electrode layer 102.
In this embodiment, the size of the through hole is 1/5 to 1/20 of the size of the diode chip. For example, when the side length of the diode chip is 7.6mm to 21mm, the maximum cross-sectional diameter of the upper surface of the through-hole 200 may be 1.2mm to 3 mm.
The through holes 200 may also be gradually reduced from the upper surface to the lower surface of the diode chip, which is more convenient for process. The position of the through hole 200 may be any position of the diode chip, in this embodiment, the through hole 200 is located at the center of the chip, and in some embodiments, the through hole 200 may be located at a position offset from the center of the chip.
In this embodiment, the conductive column 300 is a conductive metal, the bottom of the conductive column 300 is fixed to the second metal electrode layer 102 in a screwing manner, the fixing is firmer in the screwing manner, and meanwhile, the manufacturing process is facilitated, the height of the conductive column 300 is conveniently adjusted, so that the height of the device can be changed along with the requirement of an external PCB, and the installation is facilitated.
In this embodiment, the upper end of the conductive post 300 is higher than the surface of the first metal electrode layer 101, so that the electrode led out by the conductive post 300 and the electrode led out by the first metal electrode layer 101 are more easily attached to the PCB, for example, the conductive post and the electrode led out by the first metal electrode layer 101 may be inserted into a hole reserved in the PCB in an inserting manner, so that the welding is firmer and the positioning is possible.
In this embodiment, the outer sidewall of the conductive pillar 300 further has an insulating layer 301 for insulating and isolating the diode chip 100 and the first metal electrode layer 101, so that the electrode led out from the conductive pillar 300 is isolated from the electrode led out from the first metal electrode layer 101, thereby avoiding a short circuit of the device.
In the structure, the middle or the area deviated from the center of the diode chip 100 is provided with a hole, and the anode or the cathode is led out to the other surface of the chip from the hole, so that the anode and the cathode are positioned on the same surface, thereby saving the packaging size of a product, realizing the surface mount packaging of the product, improving the PCB mounting efficiency and reducing the PCB occupation area of a device.
In this embodiment, the led chip further includes an encapsulating layer 400, where the encapsulating layer 400 is wrapped around the diode chip 100, and is used to protect the internal structure of the diode chip 100 and improve the reliability and stability of the device, the upper surface of the first metal electrode layer 101 and the lower surface of the second metal electrode layer 102 need to be at least partially exposed, that is, part or all of the upper surface of the first metal electrode layer may be exposed, and part or all of the lower surface of the second metal electrode layer may be exposed, so as to facilitate heat dissipation or external connection of a lead.
Referring to fig. 5, a method for manufacturing a diode device is also provided in this embodiment, where the method includes:
The diode chip 100 may be a unidirectional or bidirectional TVS chip, a semiconductor discharge tube, or a general rectifier diode chip. The diode chip may be a mesa structure or a planar type structure.
And 2, presetting the position of the through hole, and forming a first through hole penetrating through the diode chip 100 at the preset position of the through hole.
Referring to fig. 6, the predetermined via position may be at a center position of the diode chip 100, or may be an off-center position, and the predetermined via size is 1/5 to 1/20 of the diode chip size. For example, when the side length of the diode chip is 7.6mm to 21mm, the maximum cross-sectional diameter of the upper surface of the predetermined through hole 200 may be 1.2mm to 3 mm.
In this embodiment, forming a first through hole penetrating through the diode chip 100 at a predetermined through hole position includes:
the diode chip etching method comprises the steps of forming a graphical photoresist layer on the upper surface, presetting through hole positions and patterns on the graphical photoresist layer, then etching the diode chip by using the graphical photoresist layer as a mask, specifically forming a first through hole which penetrates through the diode chip in the thickness direction in an acid corrosion mode, and etching the diode chip in the acid corrosion mode to avoid the chip from being damaged by stress and guarantee the performance of the chip.
In some embodiments, a laser cutting method, for example, a laser may be used at a predetermined through hole position, so as to form a first through hole penetrating in the thickness direction of the diode chip 100.
And 3, welding a first metal electrode layer 101 on the upper surface, and welding a second metal electrode layer 102 on the lower surface.
And perforating the first metal electrode layer 101 to form a second through hole penetrating through the first metal electrode layer 101, wherein the position of the second through hole is consistent with that of the first through hole, and the first through hole and the second through hole form a through hole 200 penetrating through the first metal electrode layer 101 and the diode chip 100.
And step 4, leading out the conductive columns 300 from the second metal electrode layer 102 from the inside of the through holes 200.
Referring to fig. 7 in combination, the diameter of the conductive post 300 is smaller than the diameter of the via 200.
In this embodiment, the step of leading out the conductive pillar 300 from the second metal electrode layer 102 through the through hole 200 includes:
first, a screw hole is formed at a position where a through hole is preset on the second metal electrode layer 102.
Then, screws corresponding to the screw holes are formed at the connecting ends of the conductive posts 300 and the second metal electrode layer 102.
Finally, the bottom of the conductive post 300 and the second metal electrode layer 102 are fixedly connected by a screw connection.
In this embodiment, the conductive post 300 and the second metal electrode layer 102 are fixedly connected in a screwed manner, so that the height of the upper end of the conductive post 300 higher than the surface of the first metal electrode layer 101 can be adjusted by adjusting the screw depth of the conductive post 300, thereby improving the flexibility of the device application.
In this embodiment, an insulating material may be filled in a gap between the conductive layer 300 and the through hole 200 by a manual coating or a syringe injection coating, so as to form the insulating layer 301.
When the above steps are completed, the diode device is manufactured, in this embodiment, the device is further encapsulated by injection molding of a plastic film or by dropping glue from a syringe, so as to form an encapsulating layer 400 outside the device, the material of the encapsulating layer 400 has insulating, waterproof and heat conducting functions, and meanwhile, the chip is prevented from being damaged due to the fact that external harmful gas or hard objects contact the chip, and fig. 8 may be combined with fig. 8, which is a schematic structural diagram that the conductive column 300 is flush with the first metal electrode layer 101 in height.
In some embodiments, the formation of the encapsulating layer 400 of the device and the formation of the insulating layer 301 may be performed simultaneously by injection or dropping.
The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.
Claims (7)
1. A diode device, comprising:
the LED chip comprises a diode chip, wherein a first metal electrode layer covers the upper surface of the diode chip, and a second metal electrode layer covers the lower surface of the diode chip; the area of the first metal electrode layer is larger than that of the upper surface; the area of the second metal electrode layer is larger than that of the lower surface;
a through hole penetrates through the diode chip and the first metal electrode layer in the thickness direction, the through hole is gradually reduced from the upper surface to the lower surface of the diode chip, a conductive column is arranged in the through hole, and the conductive column is a metal conductor, is electrically connected with the second metal electrode layer and is fixed in a screw connection mode; the outer side wall of the conductive column is provided with an insulating layer, and the insulating layer is used for insulating and isolating the diode chip and the first metal electrode layer;
the diode chip further comprises an encapsulating layer, wherein the encapsulating layer wraps the diode chip for one circle, part or all of the upper surface of the first metal electrode layer is exposed, and part or all of the lower surface of the second metal electrode layer is exposed.
2. The diode device of claim 1, wherein the upper end of the conductive post is higher than the surface of the first metal electrode layer.
3. The diode device of claim 1, wherein the via size is 1/5 to 1/20 of the diode die size.
4. The diode device of claim 1, wherein the diode chip is a unidirectional or bidirectional TVS, semiconductor discharge tube, or rectifier diode chip.
5. A method of manufacturing a diode device, comprising:
providing a diode chip having an upper surface and a lower surface opposite thereto;
presetting a through hole position, forming a first through hole penetrating through the diode chip at the preset through hole position, wherein the upper surface to the lower surface of the diode chip with the first through hole are gradually reduced;
welding a first metal electrode layer on the upper surface, and welding a second metal electrode layer on the lower surface;
opening the first metal electrode layer to form a second through hole penetrating through the first metal electrode layer, wherein the position of the second through hole is consistent with that of the first through hole, and the first through hole and the second through hole form a through hole penetrating through the first metal electrode layer and the diode chip;
leading out a conductive column from the second metal electrode layer from the through hole, and manufacturing a screw hole on the second metal electrode layer at the position of a preset through hole; a screw corresponding to the screw hole is manufactured at the connecting end part of the conductive column and the second metal electrode layer, the conductive column and the second metal electrode layer are fixedly connected in a screwing mode, and the diameter of the conductive column is smaller than that of the through hole;
filling an insulating material in a gap between the conductive column and the through hole to form an insulating layer so as to insulate and isolate the conductive column, the diode chip and the first metal electrode layer;
and forming an encapsulating layer on the periphery of the diode chip, wherein the encapsulating layer exposes part or all of the upper surface of the first metal electrode layer, and exposes part or all of the lower surface of the second metal electrode layer.
6. The manufacturing method according to claim 5, wherein a height of the upper end of the conductive post above the surface of the first metal electrode layer is adjusted by adjusting a screw depth of the conductive post.
7. The manufacturing method of claim 5, wherein forming a first via hole through the diode chip at a predetermined via hole position includes the steps of:
forming a graphical photoresist layer on the upper surface, and forming a first through hole penetrating in the thickness direction of the diode chip by using the graphical photoresist layer as a mask and using an acid corrosion mode;
alternatively, the first and second electrodes may be,
and cutting at the preset through hole position by using a laser cutting method, and forming a through first through hole in the thickness direction of the diode chip.
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| CN202011483499.8A CN112242450B (en) | 2020-12-16 | 2020-12-16 | Diode device and manufacturing method thereof |
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| TW201633539A (en) * | 2015-03-13 | 2016-09-16 | Toshiba Kk | Semiconductor device and semiconductor package |
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|---|---|---|---|---|
| US6008527A (en) * | 1997-03-14 | 1999-12-28 | Toko Kabushiki Kaisha | Diode device |
| TW201633539A (en) * | 2015-03-13 | 2016-09-16 | Toshiba Kk | Semiconductor device and semiconductor package |
| CN105762200A (en) * | 2016-04-28 | 2016-07-13 | 上海格瑞宝电子有限公司 | Groove-included schottky diode structure and preparation method thereof |
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