CN112241105A - Nano structure, preparation method thereof, display panel and display device - Google Patents

Nano structure, preparation method thereof, display panel and display device Download PDF

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Publication number
CN112241105A
CN112241105A CN202011096639.6A CN202011096639A CN112241105A CN 112241105 A CN112241105 A CN 112241105A CN 202011096639 A CN202011096639 A CN 202011096639A CN 112241105 A CN112241105 A CN 112241105A
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CN
China
Prior art keywords
substrate
imprinting
metal layer
glue
display panel
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Pending
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CN202011096639.6A
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Chinese (zh)
Inventor
邓永
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TCL China Star Optoelectronics Technology Co Ltd
TCL Huaxing Photoelectric Technology Co Ltd
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TCL Huaxing Photoelectric Technology Co Ltd
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Priority to CN202011096639.6A priority Critical patent/CN112241105A/en
Publication of CN112241105A publication Critical patent/CN112241105A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices

Abstract

The application discloses a nano structure, a preparation method thereof and a display panel, wherein the preparation method comprises the following steps: providing a substrate; forming a metal layer on a substrate; forming an imprinting adhesive on the metal layer; providing an imprinting template; corresponding the imprinting template to the substrate, and forming a preset pattern with alternate convex parts and concave parts on the imprinting glue; removing the imprint glue of the concave part to expose part of the metal layer; carrying out surface hardening treatment on the embossing glue of the convex part; etching the exposed metal layer; the remaining imprint resist is removed. The method improves the etching resistance of the stamping die, so as to prevent the damage of the stamping glue when the metal layer is etched, and improve the manufacturing precision and performance of the nano structure. The method is easy to implement and suitable for mass production. The relative deviation of the heights of the projections of the nano-structure prepared by the method is less than 10%. The nano structure can be used as a wire grid polarizer in a display panel, and the display quality and the yield of the display panel are improved.

Description

Nano structure, preparation method thereof, display panel and display device
Technical Field
The present disclosure relates to the field of nanoimprint technology, and in particular, to a nanostructure, a method for manufacturing the nanostructure, a display panel, and a display device.
Background
A Liquid Crystal Display (LCD) is a Display device including a Liquid Crystal Display panel and a backlight. The liquid crystal display panel generally includes an array substrate, a color filter, and a polarizer. The polarizer may be a wire grid polarizer that changes incident light into linearly polarized light. To improve the display quality of the display, the grid on the wire grid polarizer is typically highly uniform.
Wire grid polarizers are often fabricated by Nano-imprinting (NIL) processes. Nanoimprint technology is a low-cost, high-yield, high-resolution nanostructure pattern replication technology, and has been widely used in the fields of optoelectronics, optical devices, microelectromechanical systems, semiconductor integrated circuits, biochips, microfluidic devices, and the like. The nano-imprinting process usually impresses a pattern on the imprinting adhesive through the nano-imprinting template, and then etches the imprinting adhesive and the metal layer to enable the metal layer to form a preset pattern, but in the process of etching the metal layer in the existing preparation process, because the pressure, the strength, the flow of etching gas and the etching time are difficult to accurately control, the imprinting adhesive serving as a mask is often corroded, so that the prepared nano-structure is abnormal in shape and seriously uneven in height, the display of a display panel is abnormal, and the yield is reduced.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a nanostructure, a method for manufacturing the nanostructure, a display panel and a display device, so as to prevent the imprinting paste from being damaged during the process of nanoimprint etching metal, thereby causing an abnormal shape of the nanostructure.
The application provides a preparation method of a nano structure, which comprises the following steps:
providing a substrate;
forming a metal layer on the substrate;
forming an imprinting adhesive on the metal layer;
providing an imprinting template; forming a preset pattern with alternate convex parts and concave parts on the imprinting adhesive by using the imprinting template;
removing the imprint glue of the concave part to expose part of the metal layer;
carrying out surface hardening treatment on the embossing glue of the convex part;
etching the exposed metal layer;
the remaining imprint resist is removed.
Further, in some embodiments, the surface hardening treatment is a plasma treatment, a hard bake, or an ion implantation.
Further, in some embodiments, the case hardening treatment is a plasma treatment, the plasma comprising one or more of helium or argon.
Further, in some embodiments, the helium or argon gas is at a flow rate of 0 to 2000sccm for a time of 5 seconds to 300 seconds at a temperature of 25 ℃ to 120 ℃.
Further, in some embodiments, the surface hardening treatment is ion implantation with an ion beam energy of 5KeV to 50KeV and an ion beam dose of 10 KeV11cm-2To 1017cm-2。
Further, in some embodiments, the surface hardening treatment is a hard bake comprising heating the surface of the imprinting glue at a temperature of 100 ℃ to 200 ℃ for a time of 1 second to 50 seconds.
Further, in some embodiments, the material of the imprint resist is a thermosetting resist or a photosensitive resist.
Further, in some embodiments, the step of forming the predetermined pattern of alternating projections and recesses on the imprinting glue comprises: and placing the imprinting template on the imprinting glue, applying pressure for pressing, then curing the imprinting glue through thermal curing or light curing, and transferring the pattern on the imprinting template to the cured imprinting glue.
The application also provides a nanostructure, which comprises a substrate and a metal layer arranged on the substrate, wherein the metal layer is provided with a plurality of protrusions arranged at intervals, and the relative deviation of the heights of the protrusions is less than 10%.
The present application also provides a display panel, including:
the first substrate and the second substrate are oppositely arranged;
a liquid crystal layer disposed between the first substrate and the second substrate;
the display panel further comprises at least one wire grid polarizer, the wire grid polarizer is positioned on one side surface of the first substrate facing or deviating from the liquid crystal layer or/and one side surface of the second substrate facing or deviating from the liquid crystal layer, and the wire grid polarizer is provided with the nano structure.
The application has the following advantages and technical effects:
the application provides a preparation method of nanostructure adopts nanometer impression technology to carry out the impression to the impression and glues, forms the alternate preset pattern of concave part and convex part, removes the impression of concave part and glues the back, carries out the case hardening to the impression of convex part and glues in order to glue the surface formation protective layer at the impression, improves anti-etching ability to prevent to cause the damage that the impression was glued when etching the metal level, improves nanostructure's preparation precision and performance. The method is easy to implement and suitable for mass production. The nanostructure prepared by the method can be used as a wire grid polarizer in a display panel, and the display quality and the yield of the display panel are improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic flow chart of a method for preparing a nanostructure provided in an embodiment of the present application.
Fig. 2 is a schematic diagram of a step of performing a compression molding on a substrate in a nanostructure manufacturing method provided in an embodiment of the present application.
Fig. 3 is a schematic diagram of a step of demolding in the method for preparing a nanostructure provided in the embodiment of the present application.
Fig. 4 is a schematic diagram illustrating a step of removing the imprint resist of the recess in the method for fabricating a nanostructure according to an embodiment of the present disclosure.
Fig. 5 is a schematic diagram illustrating a step of a surface hardening process in the nanostructure manufacturing method according to the embodiment of the present application.
Fig. 6 is a schematic diagram illustrating a step of etching the exposed metal layer in the method for fabricating a nanostructure according to the embodiment of the present disclosure.
Fig. 7 is a schematic structural diagram of a nanostructure after removing imprint glue of a protrusion in a nanostructure preparation method provided in an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a display panel according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise the first and second features being directly adjacent or may comprise the first and second features being not in direct contact but in contact with each other by means of further features between them. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
The application provides a nano structure, a preparation method thereof, a display panel and a display. The details will be described below separately.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for preparing a nanostructure according to an embodiment of the present disclosure. The preparation method comprises the following steps:
step 101: providing a substrate 10; a metal layer 20 is formed on the substrate 10.
Specifically, the substrate 10 may be glass. The metal layer 20 may be a metal of aluminum (Al), silver (Ag), copper (Cu), or a high strength alloy. The metal of the high strength alloy may be a metal of molybdenum tungsten alloy (MoW). Of course, in practical applications, the material of the metal layer may be set according to practical application environments, and the application is not limited in particular here.
Step 102: forming an imprint paste 30 on the metal layer 20; providing an imprint template 40; an imprint template 40 is used to form a nano-pattern having alternating convex and concave portions on the imprint resist 30.
Specifically, the material of the imprint resist 30 may be a thermosetting resist, and may also be a photosensitive resist. Referring to fig. 2, fig. 2 is a schematic diagram illustrating a step of pressing a substrate in the method for fabricating a nanostructure according to an embodiment of the present disclosure. In one embodiment, the imprint resist 30 is a thermosetting resist, and the molding conditions are heat and pressure. The thermally cured photoresist may be Polymethylmethacrylate (PMMA). The temperature of the thermosetting photoresist reaches above the glass transition temperature by heating, the macromolecular chain segment can be fully unfolded and correspondingly positioned in a high elastic state, and the thermosetting photoresist can be quickly deformed under certain pressure. The constant temperature and pressure causes the flowing polymer to fill the cavities in the imprint template 40. In another embodiment, the imprint resist 30 is a photosensitive resist, and may be a UV-curable resist. The ultraviolet curing photoresist is a material sensitive to ultraviolet rays, has good photosensitivity, and can be a photosensitive epoxy resin system, such as SU-8. The conditions of the stamper are heating, pressurizing and ultraviolet exposure, specifically heating the photoresist to above the glass transition temperature, then pressurizing at a constant temperature to fill the cavity in the imprint template 40 with the flowing polymer, and curing the imprint photoresist by ultraviolet exposure.
The imprint template 40 is a nano-imprint template having a predetermined pattern, and generally has high hardness, a low expansion coefficient, and good anti-adhesion properties. The imprint template 40 may be made of Si or SiO2The imprint template 40 may further have an anti-sticking layer adhered thereon, and the anti-sticking layer may be made of chromium (Cr), nickel (Ni), or aluminum (Al).
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a step of demolding in the method for preparing a nanostructure according to an embodiment of the present disclosure.
Step 103: the imprint resist 30 of the recess is removed to expose a portion of the metal layer 20. In the present application, the imprinting glue 30 serves as an etching barrier layer for the unexposed metal layer, and functions as a mask plate.
Please refer to fig. 4, fig. 4 is a drawing of the present applicationThe embodiment provides a schematic step diagram of the method for preparing a nanostructure when removing the imprint resist 30 of the concave portion. Specifically, the imprint paste 30 of the recess is etched using an etching process. In some embodiments, the imprint resist 30 of the recess is etched using a dry etching process, and the etching gas may be CF4. The flow rate is 0-2000Ssccm, the temperature is 25-120 ℃, and the time is 0-100 seconds. In practical applications, the dry etching may be the same as the process in the prior art, and is not described herein in detail.
Step 104: the convex imprint paste 30 is subjected to a surface hardening treatment.
In the prior art, usually, the imprinting glue 30 used as a mask plate is not accurately controlled in the process of etching a metal layer, the imprinting glue 30 is preferentially etched and damaged, and does not function as a mask plate, and the pattern accuracy of the etched metal nanostructure is low. Therefore, in this step, the surface of the imprint glue 30 is hardened to form a protection layer on the surface of the imprint glue, so that the imprint glue is prevented from being etched in the process of patterning the metal layer, the precision of the nano structure is improved, and the display quality of the display panel is improved. Referring to fig. 5, fig. 5 is a schematic view illustrating a step of surface hardening treatment in the method for preparing a nanostructure according to the embodiment of the present application. Specifically, the surface hardening treatment may be performed by a process such as plasma treatment, ion implantation, and hard baking.
In some embodiments, the convex portion of the imprint glue 30 is surface-hardened by plasma, and acid-base reactive groups on the polymer of the surface layer of the imprint glue become passivation groups resistant to corrosion to form the protective layer 31. The plasma may be helium or argon or a combination of both. The gas flow of the plasma is 0-2000sccm, the time is 5-300 seconds, and the temperature is 25-120 ℃.
In some embodiments, the imprint glue 30 of the convex portion is surface-hardened by ion implantation. The application has no limit requirement on the ion species of the ion implantation, and the skilled person can flexibly select the ion species according to the practical application situation. In this embodiment, the ion to be implanted may beBoron ions (B), phosphorus ions (P), arsenic ions (As), and the like. The ion beam energy of the ion implantation is 5-50KeV, and the ion beam dose of the ion implantation is 1011cm-2To 1017cm-2The ion beam implantation energy and dose of the ion implantation can be flexibly adjusted within the above range by those skilled in the art in the case of the thin and thick protective layer 31 formed on the surface of the imprint resist 30, and the like, and is not particularly limited herein.
In some embodiments, the convex imprint paste 30 is subjected to a surface hardening process by a hard baking process. The hard baking is to bake and heat the surface of the imprinting glue so as to improve the etching resistance of the imprinting glue. The temperature of the baking heating should not be too high, which may cause difficulty in removing the imprint glue 30 of the subsequent protrusion. The temperature is not too low, and if the temperature is too low, the protective layer 31 is not formed on the surface of the imprinting glue 30 of the convex part, and the imprinting glue is easily etched by subsequent etching gas, so that the effect of a mask plate cannot be achieved. Tests show that the temperature for heating the stamping glue is 100-200 ℃, and the heating time is 1-50 seconds.
Step 105: and etching the exposed metal layer.
Referring to fig. 6, fig. 6 is a schematic diagram illustrating a step of etching an exposed metal layer in a method for fabricating a nanostructure according to an embodiment of the present disclosure. Specifically, in some embodiments, the exposed metal layer is etched by a dry etching process, and the etching gas may be BCl3And Cl2The combination of the two gases, the flow rate of the gas is 0-2000sccm, the temperature is 25-120 ℃, and the time is 0-500 seconds.
Step 106: the remaining imprint resist 30 is removed.
Referring to fig. 7, fig. 7 is a schematic structural diagram of a nanostructure after removing the imprint resist 30 of the protrusion in the method for preparing a nanostructure provided in the embodiment of the present application. Specifically, the remaining imprint glue 30 is removed by peeling. The imprinting paste 30 may be removed using a stripping solution such that the stripping solution contacts the imprinting paste 30, and the stripping solution chemically reacts with the metal layer 20 without any reaction. The type of stripping solution is dependent on the specific material of the imprint resist 30, and one skilled in the art can select the stripping solution flexibly according to the specific type of the imprint resist 30.
The application provides a preparation method of nanostructure adopts nanometer impression technology to carry out the impression to the impression and glues, forms the alternate preset pattern of concave part and convex part, removes the impression of concave part and glues the back, carries out the case hardening to the impression of convex part and glues in order to glue the surface formation protective layer at the impression, improves anti-etching ability to prevent to cause the damage that the impression was glued when etching the metal level, improves nanostructure's preparation precision and performance.
The application also provides a nano structure prepared by the preparation method, which comprises a substrate and a metal layer arranged on the substrate, wherein the metal layer is provided with a plurality of protrusions arranged at intervals, and the relative deviation of the heights of the protrusions is less than 10%. The relative deviation is the percentage of the difference between the height value of one protrusion and the average height value of all protrusions to the average height value.
Please refer to fig. 8, and fig. 8 is a schematic structural diagram of a display panel according to an embodiment of the present application. The display panel 100 includes:
a first substrate 110 and a second substrate 120 disposed opposite to each other;
a liquid crystal layer 130 disposed between the first substrate 110 and the second substrate 120;
the display panel 100 further comprises at least one wire grid polarizer 140, the wire grid polarizer 140 being located on a side surface of the first substrate 110 facing or facing away from the liquid crystal layer 130 or/and on a side surface of the second substrate 120 facing or facing away from the liquid crystal layer 130, the wire grid polarizer 140 having a nanostructure as described above, the nanostructure comprising a substrate 10 and a metal layer 20, the metal layer 20 having a plurality of protrusions 21 arranged at intervals, wherein a relative deviation of heights of the plurality of protrusions 21 is less than 10%.
Specifically, the first wire grid polarizer 141 is located on a surface of the first substrate 110 facing the liquid crystal layer 130, and the second wire grid polarizer 142 is located on a surface of the second substrate 120 facing the liquid crystal layer 130.
In some embodiments, the first wire grid polarizer 141 is disposed on a side surface of the first substrate 110 away from the liquid crystal layer 130, and the second wire grid polarizer 142 is disposed on a side surface of the second substrate 120 away from the liquid crystal layer 130.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The nanostructure, the preparation method thereof, and the display panel provided by the present application are introduced in detail above, and the technical solution of the present application is explained by applying specific examples, and the description of the above embodiments is only used to help understanding the technical solution of the present application and the core concept thereof; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. A method of making a nanostructure, comprising the steps of:
providing a substrate;
forming a metal layer on the substrate;
forming an imprinting adhesive on the metal layer;
providing an imprinting template; forming a preset pattern with alternate convex parts and concave parts on the imprinting adhesive by using the imprinting template;
removing the imprint glue of the concave part to expose part of the metal layer;
carrying out surface hardening treatment on the embossing glue of the convex part;
etching the exposed metal layer;
the remaining imprint resist is removed.
2. The method of claim 1, wherein the surface hardening treatment is a plasma treatment, a hard bake or an ion implantation.
3. The method of claim 2, wherein the surface hardening process is a plasma process, and the plasma comprises one or more of helium or argon.
4. The method of claim 3, wherein the flow rate of helium or argon is 0-2000sccm for 5-300 seconds at a temperature of 25-120 ℃.
5. The method of claim 2, wherein the surface hardening treatment is ion implantation with an ion beam energy of 5 to 50KeV and an ion beam dose of 10 KeV11cm-2To 1017cm-2。
6. The method of claim 2, wherein the surface hardening treatment is a hard bake, the hard bake comprises heating the surface of the imprinting glue at a temperature of 100 ℃ to 200 ℃ for a time of 1 second to 50 seconds.
7. The method of claim 1, wherein the imprint resist is a thermosetting resist or a photosensitive resist.
8. The method for fabricating nanostructures according to claim 1, wherein the step of forming the predetermined pattern of alternating projections and recesses on the imprinting glue comprises: and placing the imprinting template on the imprinting glue, applying pressure for pressing, then curing the imprinting glue through thermal curing or light curing, and transferring the pattern on the imprinting template to the cured imprinting glue.
9. A nanostructure prepared by the method of any one of claims 1 to 8, comprising a substrate and a metal layer disposed on the substrate, the metal layer having a plurality of spaced-apart projections, wherein the relative variation in height of the plurality of projections is less than 10%.
10. A display panel, comprising:
the first substrate and the second substrate are oppositely arranged;
a liquid crystal layer disposed between the first substrate and the second substrate;
the display panel further comprises at least one wire grid polarizer located on a side surface of the first substrate facing or facing away from the liquid crystal layer and/or on a side surface of the second substrate facing or facing away from the liquid crystal layer, the wire grid polarizer having the nanostructure of claim 9.
CN202011096639.6A 2020-10-14 2020-10-14 Nano structure, preparation method thereof, display panel and display device Pending CN112241105A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876903A (en) * 1996-12-31 1999-03-02 Advanced Micro Devices Virtual hard mask for etching
US6121158A (en) * 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
US20030222345A1 (en) * 2002-05-30 2003-12-04 Christopher Kenyon Stabilization of resist material through ion implantation
CN107479121A (en) * 2017-08-25 2017-12-15 深圳市华星光电技术有限公司 The preparation method and nano metal grating of nano metal grating
CN110333565A (en) * 2019-06-24 2019-10-15 武汉华星光电技术有限公司 Metal nano grating and its nano impression preparation method and display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876903A (en) * 1996-12-31 1999-03-02 Advanced Micro Devices Virtual hard mask for etching
US6121158A (en) * 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
US20030222345A1 (en) * 2002-05-30 2003-12-04 Christopher Kenyon Stabilization of resist material through ion implantation
CN107479121A (en) * 2017-08-25 2017-12-15 深圳市华星光电技术有限公司 The preparation method and nano metal grating of nano metal grating
CN110333565A (en) * 2019-06-24 2019-10-15 武汉华星光电技术有限公司 Metal nano grating and its nano impression preparation method and display device

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