CN112235013B - Radio frequency switch circuit, radio frequency front end circuit and wireless device - Google Patents
Radio frequency switch circuit, radio frequency front end circuit and wireless device Download PDFInfo
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- CN112235013B CN112235013B CN202011066045.0A CN202011066045A CN112235013B CN 112235013 B CN112235013 B CN 112235013B CN 202011066045 A CN202011066045 A CN 202011066045A CN 112235013 B CN112235013 B CN 112235013B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
Abstract
The invention discloses a radio frequency switch circuit, a radio frequency front-end circuit and a wireless device. The radio frequency switch circuit is used for being connected with a radio frequency power amplifier and a radio frequency antenna and comprises a first series radio frequency switch, a second series radio frequency switch, a third series radio frequency switch, a first parallel radio frequency switch and a second parallel radio frequency switch; the first series radio frequency switch, the second series radio frequency switch and the third series radio frequency switch are arranged between the radio frequency power amplifier and the radio frequency antenna in series; one end of the first parallel radio frequency switch is connected with a connection node between the first series radio frequency switch and the second series radio frequency switch, and the other end of the first parallel radio frequency switch is connected with a grounding end; one end of the second parallel radio frequency switch is connected with a connection node between the second series radio frequency switch and the third series radio frequency switch, and the other end of the second parallel radio frequency switch is connected with the grounding end. The radio frequency switch circuit can bear high enough voltage/power, reduce the introduced insertion loss and improve the isolation between different transmitting paths.
Description
Technical Field
The present invention relates to the field of radio frequency communications technologies, and in particular, to a radio frequency switch circuit, a radio frequency front end circuit, and a wireless device.
Background
In the rf front-end circuit, an rf switch is one of the indispensable elements. A radio frequency switch may be used to electrically connect the antenna to the transmit path or the receive path of the RF system, allowing multiple components to access the antenna. Typically, the rf switch may be formed by a stacked arrangement of a plurality of transistors, such as Field Effect Transistors (FETs). When such radio frequency switches are in an Open (OFF) state, they can be considered to act as a shunt "high" impedance with respect to ground. Such an rf switch that opens the stack will generally present a capacitance and an impedance. Currently, rf switches withstand higher voltages/powers by using higher stack heights to allow the rf switches to be turned off. However, in the rf front-end circuit, the higher the stack height of the rf switch used (i.e., the greater the number of tubes) the greater the insertion loss it introduces, and the greater the impedance of the rf signal as it passes through the rf switch. Therefore, it is an urgent problem to reduce the insertion loss while ensuring that the rf switch is turned off to withstand a sufficiently high voltage/power.
Disclosure of Invention
Embodiments of the present invention provide a radio frequency switch circuit, a radio frequency front end circuit, and a wireless device, so as to solve the problem that the radio frequency switch circuit cannot be compatible with a high enough voltage/power when being turned off, and can reduce insertion loss.
The invention provides a radio frequency switch circuit which is used for being connected with a radio frequency power amplifier and a radio frequency antenna and comprises a first series radio frequency switch, a second series radio frequency switch, a third series radio frequency switch, a first parallel radio frequency switch and a second parallel radio frequency switch;
the first series radio frequency switch, the second series radio frequency switch, and the third series radio frequency switch are arranged in series between the radio frequency power amplifier and the radio frequency antenna;
one end of the first parallel radio frequency switch is connected with a connection node between the first series radio frequency switch and the second series radio frequency switch, and the other end of the first parallel radio frequency switch is connected with a grounding end;
one end of the second parallel radio frequency switch is connected with a connection node between the second series radio frequency switch and the third series radio frequency switch, and the other end of the second parallel radio frequency switch is connected with a grounding end.
Preferably, the first series rf switch, the second series rf switch, the third series rf switch, the first parallel rf switch and the second parallel rf switch are rf switches formed by a single transistor, or rf switches formed by at least two transistors connected in series.
Preferably, the number of transistors forming the first series rf switch, the second series rf switch, the third series rf switch, the first parallel rf switch, and the second parallel rf switch is N1, N2, N3, N4, and N5, respectively, and the source-drain breakdown voltage of each transistor is VDSThe maximum voltage at the end of the first series radio frequency switch connected to the radio frequency power amplifier is VmaxA, and the maximum voltage at the end of the third series radio frequency switch connected to the radio frequency antenna is VmaxB, then
Wherein the content of the first and second substances,
is rounded up.
Preferably, the number of transistors forming the first series RF switch, the second series RF switch and the third series RF switch is N1, N2 and N3 respectively, then N2 is greater than or equal to N1, and N2 is greater than or equal to N3.
Preferably, N1 ═ 1 and N3 ═ 1.
Preferably, gate widths of transistors forming the first, second and third series RF switches are larger than gate widths of transistors forming the first and second parallel RF switches
Preferably, when the radio frequency power amplifier transmits a radio frequency signal through the radio frequency antenna, the first series radio frequency switch, the second series radio frequency switch and the third series radio frequency switch are closed, and the first parallel radio frequency switch and the second parallel radio frequency switch are opened;
when the radio frequency power amplifier does not transmit a radio frequency signal through the radio frequency antenna and outputs a radio frequency signal, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the first parallel radio frequency switch are opened, and the second parallel radio frequency switch is closed;
when the radio frequency power amplifier does not transmit a radio frequency signal through the radio frequency antenna and the radio frequency antenna transmits the radio frequency signal, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the second parallel radio frequency switch are switched off, and the first parallel radio frequency switch is switched on.
The invention provides a radio frequency front-end circuit which comprises a first power amplifier, a second power amplifier, a first antenna and a second antenna, wherein a first switch circuit is arranged between the first power amplifier and the first antenna, a second switch circuit is arranged between the first power amplifier and the second antenna, a third switch circuit is arranged between the second power amplifier and the first antenna, and the first switch circuit is the radio frequency switch circuit.
Preferably, when the first power amplifier transmits a radio frequency signal to the first antenna through the first switch circuit, the first series radio frequency switch, the second series radio frequency switch and the third series radio frequency switch are closed, and the first parallel radio frequency switch and the second parallel radio frequency switch are opened;
when the first power amplifier transmits a radio frequency signal to the second antenna through the second switching circuit, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the first parallel radio frequency switch are opened, and the second parallel radio frequency switch is closed;
when the second power amplifier transmits a radio frequency signal to the first antenna through the third switching circuit, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the second parallel radio frequency switch are opened, and the first parallel radio frequency switch is closed.
The invention provides a wireless device, which comprises the radio frequency switch circuit or the radio frequency front-end circuit.
According to the radio frequency switch circuit, the radio frequency front-end circuit and the wireless device, the circuit connection relation of the radio frequency switches in the transmitting path can be reasonably configured and optimized, namely the number and distribution of the radio frequency switches and the number of transistors of each radio frequency switch are reasonably configured, the radio frequency switch circuit can be guaranteed to bear enough high voltage/power, meanwhile, the insertion loss caused by the radio frequency switch circuit can be reduced, the isolation degree among different transmitting paths is improved by optimizing the configuration of the radio frequency switches in the transmitting path, and the mutual interference of radio frequency signals of different transmitting paths is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a circuit diagram of an RF switch circuit according to an embodiment of the present invention;
fig. 2 is a circuit diagram of an rf front-end circuit according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity to indicate like elements throughout.
It will be understood that when an element or layer is referred to as being "on …," "adjacent to …," "connected to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under …", "under …", "below", "under …", "above …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
The embodiment of the present invention provides a Radio Frequency switch circuit 10, which is applied to a Radio Frequency front end circuit, specifically to a transmission path of an RF system, and can be used to connect a Radio Frequency Power Amplifier (Radio Frequency Power Amplifier, hereinafter referred to as RF PA) 20 and a Radio Frequency antenna 30, and is used to control whether a high-Power Radio Frequency signal amplified by the Radio Frequency Power Amplifier 20 needs to be transmitted through the Radio Frequency antenna 30.
As shown in fig. 1, the rf switch circuit 10 is configured to be connected to the rf power amplifier 20 and the rf antenna 30, and includes a first serial rf switch S11, a second serial rf switch S12, a third serial rf switch S13, a first parallel rf switch S14, and a second parallel rf switch S15; the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13 are disposed in series between the rf power amplifier 20 and the rf antenna 30; one end of the first parallel rf switch S14 is connected to the connection node between the first series rf switch S11 and the second series rf switch S12, and the other end is connected to the ground terminal; one end of the second parallel rf switch S15 is connected to the connection node between the second series rf switch S12 and the third series rf switch S13, and the other end is connected to the ground.
The radio frequency switch circuit 10 shown in fig. 1 is applied to a transmission path of an RF system, and its operation process includes the following conditions:
in the first case: when the rf power amplifier 20 transmits an rf signal through the rf antenna 30, the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13 are closed, and the first parallel rf switch S14 and the second parallel rf switch S15 are opened.
That is, when the high-power rf signal output by the rf power amplifier 20 needs to be transmitted through the rf antenna 30 through the transmission path shown in fig. 1, at this time, the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13 need to be closed, and the first parallel rf switch S14 and the second parallel rf switch S15 need to be opened, because the high-power rf signal passes through the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13, the insertion loss of the high-power rf signal is the sum of the insertion losses of the three rf switches, i.e., the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13.
In the second case: when the rf power amplifier 20 does not transmit the rf signal through the rf antenna 30 and the rf power amplifier 20 outputs the rf signal, the first series rf switch S11, the second series rf switch S12, the third series rf switch S13 and the first parallel rf switch S14 are opened, and the second parallel rf switch S15 is closed.
That is, the high-power rf signal output by the rf power amplifier 20 is not transmitted through the rf switch circuit 10, and when the high-power rf signal output by the rf power amplifier 20 needs to be transmitted through another transmission path connected to the rf power amplifier 20, the high power/high voltage exists at the end (i.e., node a) of the first serial rf switch S11 connected to the rf power amplifier 20. In this example, when the rf power amplifier 20 does not transmit the rf signal through the rf antenna 30, but the rf power amplifier 20 outputs the rf signal, the first serial rf switch S11, the second serial rf switch S12, the third serial rf switch S13 and the first parallel rf switch S14 need to be opened, the second parallel rf switch S15 is closed, the first serial rf switch S11, the second serial rf switch S12 and the third serial rf switch S13 are opened, so that the rf signal cannot be transmitted from the rf power amplifier 20 to the rf antenna 30 for transmission, when the high power/high voltage exists at the node a, one end of the second parallel rf switch S15 is connected to the connection node between the second serial rf switch S12 and the third serial rf switch S13, and the other end is connected to the ground terminal, the high power/high voltage existing at the node a is shared by the first serial rf switch S11 and the second serial rf switch S12, the second parallel rf switch S15 is used to electrically ground the high voltage in the first series rf switch S11 and the second series rf switch S12, so as to ensure the normal operation of the rf switches and prolong the service life thereof.
In the third case: when the rf power amplifier 20 does not transmit the rf signal through the rf antenna 30, and the rf antenna 20 transmits the rf signal, the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, and the second parallel rf switch S15 are opened, and the first parallel rf switch S14 is closed.
That is, when the rf power amplifier 20 outputs the amplified high-power rf signal and the rf antenna 30 needs to transmit the rf signal transmitted by other transmission paths, the high-power/high-voltage exists at the end (i.e., node B) of the third series rf switch S13 connected to the rf antenna 30. . In this example, when the rf power amplifier 20 does not transmit the rf signal through the rf antenna 30, but the rf antenna 30 needs to transmit the rf signal, the first serial rf switch S11, the second serial rf switch S12, the third serial rf switch S13 and the second parallel rf switch S15 are turned off, the first parallel rf switch S14 is turned on, the first serial rf switch S11, the second serial rf switch S12 and the third serial rf switch S13 are turned off, so that the rf signal cannot be transmitted from the rf power amplifier 20 to the rf antenna 30 for transmission, when the high power/high voltage exists in the node B, one end of the first parallel rf switch S14 is connected to the connection node between the first serial rf switch S11 and the second serial rf switch S12, and the other end is connected to the ground terminal, and the high power/high voltage existing in the node B is shared by the second serial rf switch S12 and the third serial rf switch S13, the high voltage in the third series radio frequency switch S13 and the second series radio frequency switch S12 is electrically grounded by the first parallel radio frequency switch S14, so that the normal operation of the radio frequency switches is guaranteed, and the service life of the radio frequency switches is prolonged.
In this embodiment, the first serial rf switch S11, the second serial rf switch S12, and the third serial rf switch S13 are serially connected between the rf power amplifier 20 and the rf antenna 30, so that when the rf switch circuit 10 is turned off, the rf signals at two ends of the rf switch circuit 10 can be isolated, that is, the isolation between different transmission paths is improved, and the rf signals on different transmission paths are prevented from interfering with each other; when the radio frequency switch circuit 10 is turned off, the high voltage existing on the second series radio frequency switch S12 and the third series radio frequency switch S13 is electrically grounded by the first parallel radio frequency switch S14; the second parallel radio frequency switch S15 is used to electrically ground the high voltage existing on the first series radio frequency switch S11 and the second series radio frequency switch S12, which is helpful to ensure the normal operation of the radio frequency switches, ensure the service life of the radio frequency switches, and ensure that the radio frequency switch circuit 10 can bear a sufficiently high voltage/power; when the rf switch circuit 10 is turned on, it is ensured that the first series rf switch S11, the second series rf switch S12 and the third series rf switch S13 are connected in series to introduce a low insertion loss. That is, the rf switch circuit 10 can reduce the introduced insertion loss while ensuring that it can bear a sufficiently high voltage/power, and improves the isolation between different transmission paths by optimizing the configuration of the rf switch in the transmission path, thereby avoiding the mutual interference of the rf signals of different transmission paths.
In an embodiment, the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, the first parallel rf switch S14 and the second parallel rf switch S15 are rf switches formed by a single transistor, or rf switches formed by at least two transistors connected in series. Alternatively, the transistor may be a MOS transistor.
As an example, the rf switches such as the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, the first parallel rf switch S14 and the second parallel rf switch S15 may be rf switches formed by a single transistor, or rf switches formed by at least two transistors connected in series. In this example, the source-drain breakdown voltage of each transistor is a predetermined fixed value, for example, the source-drain breakdown voltage of each transistor constituting the radio frequency switch is 4V.
Generally, the higher the stack height of the rf switch (i.e. the larger the number of transistors), the higher the voltage/power that can be sustained by the rf switch, but the larger the insertion loss that can be induced, so the total consideration of the insertion loss that can be induced when the rf switch circuit 10 is turned on, the maximum voltage of the rf signal across the rf switch circuit when the rf switch circuit is turned off, and the source-drain breakdown voltage of each transistor is needed to determine the number of transistors of the rf switches, such as the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, the first parallel rf switch S14, and the second parallel rf switch S15.
In one embodiment, the number of transistors forming the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, the first parallel rf switch S14 and the second parallel rf switch S15 is N1, N2, N3, N4 and N5, respectively, and the source-drain breakdown voltage of each transistor is VDSThe maximum voltage at the end of the first series rf switch S11 connected to the rf power amplifier 20 is VmaxA, and the maximum voltage at the end of the third series rf switch S13 connected to the rf antenna 30 is VmaxB
Wherein the content of the first and second substances,
is rounded up.
As shown in fig. 1, the number of transistors of the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, the first parallel rf switch S14 and the second parallel rf switch S15 is N1, N2, N3, N4 and N5, respectively, and the source-drain breakdown voltage of each transistor is VDSThe maximum voltage VmaxA of the end (i.e. node a) of the first serial rf switch S11 connected to the rf power amplifier 20 and the maximum voltage VmaxB of the end (i.e. node B) of the third serial rf switch S13 connected to the rf antenna 30 are ensured to avoid breakdown of the transistors in the rf switch due to the high power/high voltage existing at the two ends of the rf switch circuit 10 when the rf switch circuit 10 is turned off, so that
Wherein the content of the first and second substances,
is rounded up. Understandably, in the design process of the rf switch circuit 10, the maximum voltage at the two ends of the rf power amplifier 20 and the rf antenna 30 and the source-drain breakdown voltage V of each transistor can be comprehensively considered according to the actual application scenario of the rf switch circuit 10DSDetermining the number of transistors of each RF switch to ensure RF switchThe off circuit 10 is not broken down by the high power/high voltage existing at the two ends when being switched off, and the service life of the radio frequency switch is guaranteed.
As an example, as shown in fig. 1, the high power rf signal outputted from the rf power amplifier 20 is not transmitted through the rf switch circuit 10, but the high power/high voltage exists at the end (i.e., node a) of the first serial rf switch S11 connected to the rf power amplifier 20. For example, if the maximum voltage of the high-power rf signal output by the rf power amplifier 20 is 30V, and the maximum voltage VmaxA existing at the end (i.e., the node a) of the first serial rf switch S11 connected to the rf power amplifier 20 is 30V, in order to ensure that the rf switch circuit 10 of the transmission path can withstand the high voltage of 30V, if the source-drain breakdown voltage V of each transistor constituting the rf switch is equal to V, the maximum voltage of the high-power rf signal is 30VDSWhen 4V, at least
The radio frequency switches formed by the transistors connected in series share, at this time, the first series radio frequency switch S11, the second series radio frequency switch S12, the third series radio frequency switch S13 and the first parallel radio frequency switch S14 are opened, the second parallel radio frequency switch S15 is closed, and then
As shown in fig. 1, a first serial rf switch S11 formed by connecting 2 transistors in series and a second serial rf switch S12 formed by connecting 6 transistors in series can be used to bear the maximum voltage of 30V existing at the end (i.e., node a) of the first serial rf switch S11 connected to the rf power amplifier 20, and closing the second parallel rf switch S15 can ground the high voltage on the first serial rf switch S11 and the second serial rf switch S12, so as to ensure the normal operation of the rf switches. In this example, the number N5 of the transistors of the second parallel rf switch S15 depends on the maximum voltage VmaxA existing at the end (i.e., node a) of the first series rf switch S11 connected to the rf antenna 30 and the source-drain breakdown voltage V of each transistorDSThe high voltage of the first series RF switch S11 and the second series RF switch S12 can be grounded to ensure the first series RF switch S11 and the second series RF switchNormal operation of S12.
As another example, as shown in fig. 1, the high power rf signal output by the rf power amplifier 20 is not transmitted through the rf switch circuit 10, but the rf antenna 30 may receive the high power rf signal transmitted by other transmission paths, so that the high power/high voltage exists at the end (i.e., node B) of the third series rf switch S13 connected to the rf antenna 30. For example, if the maximum voltage of the rf antenna 30 receiving the high-power rf signal transmitted by another transmission path is 30V, the maximum voltage existing at one end (i.e., the node B) of the third series rf switch S13 connected to the rf antenna 30 is VmaxB ═ 30V, and in order to ensure that the rf switch circuit 10 of the transmission path can withstand the high voltage of 30V, if the source-drain breakdown voltage V of each transistor constituting the rf switch is V, the maximum voltage is 30VDSWhen 4V, at least
The radio frequency switches formed by the transistors connected in series share, at this time, the first series radio frequency switch S11, the second series radio frequency switch S12, the third series radio frequency switch S13 and the second parallel radio frequency switch S15 are opened, the first parallel radio frequency switch S14 is closed, and then
As shown in fig. 1, a second serial rf switch S12 formed by connecting 6 transistors in series and a third serial rf switch S13 formed by connecting 2 transistors in series can be used to bear the maximum voltage of 30V existing at the end (i.e., node B) of the third serial rf switch S13 connected to the rf antenna 30, and closing the first parallel rf switch S14 can ground the high voltage on the second serial rf switch S12 and the third serial rf switch S13, so as to ensure the normal operation of the rf switches. In this example, the number N4 of the transistors of the first parallel rf switch S14 depends on the maximum voltage VmaxB existing at the end (i.e., node B) of the third series rf switch S13 connected to the rf antenna 30 and the source-drain breakdown voltage V of each transistorDSThe high-voltage power on the second series RF switch S12 and the third series RF switch S13 can be grounded to ensure the second series RF switch S12 and the third series RF switch S13Normal operation of the third series rf switch S13.
In this embodiment, the first serial rf switch S11, the second serial rf switch S12, and the third serial rf switch S13 are serially connected between the rf power amplifier 20 and the rf antenna 30, so that when the rf switch circuit 10 is turned off, the rf signals at two ends of the rf switch circuit 10 can be isolated, that is, the isolation between different transmission paths is improved, and the rf signals on different transmission paths are prevented from interfering with each other; when the rf switch circuit 10 is turned off, the high voltage of the second series rf switch S12 and the third series rf switch S13 is electrically grounded by the first parallel rf switch S14; the second parallel radio frequency switch S15 is used for electrically grounding the high voltage on the first series radio frequency switch S11 and the second series radio frequency switch S12, so that the normal operation of the radio frequency switches is guaranteed, and the service life of the radio frequency switches is guaranteed.
In one embodiment, the number of transistors forming the first series RF switch S11, the second series RF switch S12, and the third series RF switch S13 is N1, N2, and N3, respectively, then N2 is greater than or equal to N1, and N2 is greater than or equal to N3.
In this example, the number of transistors of the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13 is N1, N2, and N3, respectively, and the insertion loss of each transistor is db0, so that when the rf signal amplified by the rf power amplifier 20 is transmitted through the rf switch circuit 10, the sum of the insertion losses introduced by the rf signal is sum (db), and sum (db) ═ db (N1+ N2+ N3) × db0, because in the transmission process of the rf signal, when the insertion loss of the transistor is fixed to db0, N1+ N2+ N3 is smaller, and the sum of the insertion losses is smaller; since it is ensured that the RF switch circuit 10 is turned off
And
therefore, the larger N2, the smaller N1 and N3, the smaller N1+ N2+ N3, so that the radio frequency switch circuit 10 can bear enough load when N2 ≧ N1 and N2 ≧ N3 are satisfiedThe high voltage/power can reduce the insertion loss.
For example, in
When N2 is 1, the minimum value of N1 and N3 is 7, and N1+ N2+ N3 is 15; when N2 is 2, the minimum value of N1 and N3 is 6, and N1+ N2+ N3 is 14; when N2 is 3, the minimum value of N1 and N3 is 4, and N1+ N2+ N3 is 13; when N2 is 4, the minimum value of N1 and N3 is 4, and N1+ N2+ N3 is 12; when N2 is 5, the minimum value of N1 and N3 is 3, and N1+ N2+ N3 is 11; when N2 is 6, the minimum value of N1 and N3 is 2, and N1+ N2+ N3 is 10; when N2 is 7, the minimum value of N1 and N3 is 7, and N1+ N2+ N3 is 9. Therefore, in order to ensure that the rf switch circuit 10 can withstand a sufficiently high voltage/power and reduce the insertion loss, the number of transistors N2 of the second series rf switch S12 is greater than the number of transistors N1 of the first series rf switch S11 and greater than the number of transistors N3 of the third series rf switch S13. Preferably, N1 is 1, and N3 is 1, so that the insertion loss introduced by the radio frequency switch circuit 10 when transmitting radio frequency signals is minimized.
In an embodiment, gate widths of transistors forming the first series rf switch, the second series rf switch, and the third series rf switch are larger than gate widths of transistors forming the first parallel rf switch and the second parallel rf switch. .
In this example, when the radio frequency signal needs to be transmitted through the radio frequency switch circuit 10, the first serial radio frequency switch S11, the second serial radio frequency switch S12 and the third serial radio frequency switch S13 need to be closed, and the first parallel radio frequency switch S14 and the second parallel radio frequency switch S15 need to be opened, at this time, the smaller the impedance of the first serial radio frequency switch S11, the second serial radio frequency switch S12 and the third serial radio frequency switch S13 is, the more favorable the transmission of the radio frequency signal is; when the radio frequency signal does not need to be transmitted through the radio frequency switch circuit 10, the first series radio frequency switch S11, the second series radio frequency switch S12 and the third series radio frequency switch S13 need to be turned off, and the first parallel radio frequency switch S14 and the second parallel radio frequency switch S15 need to be controlled to be turned on and off according to actual conditions, at this time, the larger the impedance of the first parallel radio frequency switch S14 and the second parallel radio frequency switch S15 is, the more favorable the high enough voltage/power can be borne, and the service life of the radio frequency switch circuit can be prolonged. Therefore, in the design process of the rf switch circuit 10, the impedances of the series rf switches, such as the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13, need to be designed to be greater than the impedances of the parallel rf switches, such as the first parallel rf switch S14, the second parallel rf switch S15, and the like, so that the total gate width of the series rf switches, such as the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13, is greater than the total gate width of the parallel rf switches, such as the first parallel rf switch S14, the second parallel rf switch S15, and the like.
The invention further provides a radio frequency front-end circuit, which comprises a first power amplifier 21, a second power amplifier 22, a first antenna 31 and a second antenna 32, wherein a first switch circuit 11 is arranged between the first power amplifier 21 and the first antenna 31, a second switch circuit 12 is arranged between the first power amplifier 21 and the second antenna 32, a third switch circuit 13 is arranged between the second power amplifier 22 and the first antenna 31, and the first switch circuit 11 is the radio frequency switch circuit 10 shown in the above embodiment, that is, the first switch circuit 11 comprises a first series radio frequency switch S11, a second series radio frequency switch S12, a third series radio frequency switch S13, a first parallel radio frequency switch S14 and a second parallel radio frequency switch S15; the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13 are disposed in series between the rf power amplifier 20 and the rf antenna 30; one end of the first parallel rf switch S14 is connected to the first series rf switch S11 and the second series rf switch S12, and the other end is connected to the ground terminal; one end of the second parallel rf switch S15 is connected to the second series rf switch S12 and the third series rf switch S13, and the other end is connected to the ground.
The rf front-end circuit shown in fig. 2 includes a first power amplifier 21, a second power amplifier 22, a first antenna 31 and a second antenna 32, there are three transmission paths for transmitting rf signals, which are a first path, a second path and a third path, respectively, where the first path is a transmission path between the first power amplifier 21 and the first antenna 31, and a first switch circuit 11 is disposed on the first path; the second path is a transmission path between the first power amplifier 21 and the second antenna 32, and the second switching circuit 12 is provided on the second path; the third path is a transmission path between the second power amplifier 22 and the first antenna 31, and a third switching circuit 13 is provided on the third path, in this example, the radio frequency switching circuit 10 shown in fig. 1 is adopted as the first switching circuit 11.
The rf front-end circuit provided in this embodiment performs an rf signal transmission process, and there are following situations:
first, when the first power amplifier 21 transmits the rf signal to the first antenna 31 through the first switching circuit, the first series rf switch S11, the second series rf switch S12, and the third series rf switch S13 are closed, and the first parallel rf switch S14 and the second parallel rf switch S15 are opened.
That is, when the rf signal is transmitted through the first path, the first serial rf switch S11, the second serial rf switch S12, and the third serial rf switch S13 in the first switch circuit 11 are turned on, and the first parallel rf switch S14 and the second parallel rf switch S15 are turned off, so that the high-power rf signal output by the first power amplifier 21 passes through the first serial rf switch S11, the second serial rf switch S12, and the third serial rf switch S13, and is transmitted through the first antenna 31, and the insertion loss thereof is the sum of the insertion losses of the three rf switches, i.e., the first serial rf switch S11, the second serial rf switch S12, and the third serial rf switch S13.
Second, when the first power amplifier 21 transmits the rf signal to the second antenna 32 through the second switching circuit, the first series rf switch S11, the second series rf switch S12, the third series rf switch S13, and the first parallel rf switch S14 are opened, and the second parallel rf switch S15 is closed.
That is, when the rf signal is transmitted through the second path but not through the first path, the high-power rf signal output by the first power amplifier 21 is transmitted through the second switch circuit 12 and the second antenna 32, and the high-power rf signal output by the first power amplifier 21 causes the node a of the first switch circuit 11 to have high power/high voltage, at this time, the first serial rf switch S11, the second serial rf switch S12, the third serial rf switch S13, and the first parallel rf switch S14 need to be turned off, and the second parallel rf switch S15 needs to be turned on; because the first serial radio frequency switch S11, the second serial radio frequency switch S12 and the third serial radio frequency switch S13 are turned off, signal isolation of radio frequency signals can be realized, that is, the signal isolation between different transmission paths is improved, and mutual interference of radio frequency signals on different transmission paths is avoided; one end of the second parallel radio frequency switch S15 is connected to the second series radio frequency switch S12 and the third series radio frequency switch S13, and the other end is connected to the ground terminal, so that the first series radio frequency switch S11 and the second series radio frequency switch S12 share the high power/high voltage existing at the node a, and the second parallel radio frequency switch S15 electrically connects the high voltage in the first series radio frequency switch S11 and the second series radio frequency switch S12 to the ground, thereby ensuring the normal operation of the radio frequency switches and prolonging the service life thereof.
Thirdly, when the second power amplifier 22 transmits the rf signal to the first antenna 31 through the third switching circuit, the first series rf switch S11, the second series rf switch S12, the third series rf switch S13 and the second parallel rf switch S15 are opened, and the first parallel rf switch S14 is closed.
That is, when the rf signal is transmitted through the third path but not through the first path, the high-power rf signal output by the second power amplifier 22 is transmitted through the third switch circuit 13 and the first antenna 31, and the high-power rf signal output by the second power amplifier 22 causes the node B of the first switch circuit 11 to have high power/high voltage, at this time, the first serial rf switch S11, the second serial rf switch S12, the third serial rf switch S13, and the second parallel rf switch S15 need to be turned off, and the first parallel rf switch S14 needs to be turned on; because the first serial radio frequency switch S11, the second serial radio frequency switch S12 and the third serial radio frequency switch S13 are turned off, signal isolation of radio frequency signals can be realized, that is, the signal isolation between different transmission paths is improved, and mutual interference of radio frequency signals on different transmission paths is avoided; one end of the first parallel radio frequency switch S14 is connected to the first series radio frequency switch S11 and the second series radio frequency switch S12, and the other end is connected to the ground, so that the second series radio frequency switch S12 and the third series radio frequency switch S13 share the high power/high voltage existing at the node B, and the first parallel radio frequency switch S14 electrically connects the high voltage in the third series radio frequency switch S13 and the second series radio frequency switch S12 to the ground, thereby ensuring the normal operation of the radio frequency switches and prolonging the service life thereof.
In this embodiment, the first serial rf switch S11, the second serial rf switch S12, and the third serial rf switch S13 are serially connected between the first power amplifier 21 and the first antenna 31, so that when the first switch circuit 11 is turned off, the rf signals at two ends of the first switch circuit 11 can be isolated, that is, the signal isolation between different transmission paths is improved, and the rf signals on different transmission paths are prevented from interfering with each other; when the first switch circuit 11 is turned off, the high voltage existing on the second series rf switch S12 and the third series rf switch S13 is electrically grounded by the first parallel rf switch S14; the second parallel radio frequency switch S15 is used to electrically connect the high voltage ground existing on the first series radio frequency switch S11 and the second series radio frequency switch S12, which is helpful to ensure the normal operation of the radio frequency switch, ensure the service life of the radio frequency switch, and ensure that the first switch circuit 11 can bear enough high voltage/power; when the first switch circuit 11 is turned on, it can be ensured that the first series rf switch S11, the second series rf switch S12 and the third series rf switch S13 are connected in series to introduce a low insertion loss.
As an example, the second switch circuit 12 and the third switch circuit 13 may employ the radio frequency switch circuit 10 in the above-described embodiment, or may employ a conventional radio frequency switch circuit 10.
As shown in fig. 2, the second switch circuit 12 adopts the rf switch circuit 10 in the above embodiment, i.e. the second switch circuit 12 includes a fourth series rf switch S21, a fifth series rf switch S22, a sixth series rf switch S23, a third parallel rf switch S24 and a fourth parallel rf switch S25; the fourth series rf switch S21, the fifth series rf switch S22 and the sixth series rf switch S23 are arranged in series between the first power amplifier 21 and the second antenna 32; one end of the third parallel radio frequency switch S24 is connected to the fourth series radio frequency switch S21 and the fifth series radio frequency switch S22, and the other end is connected to the ground terminal; one end of the fourth parallel rf switch S25 is connected to the fifth serial rf switch S22 and the sixth serial rf switch S23, and the other end is connected to the ground terminal, and the specific details thereof are the same as those of the first switch circuit 11, which is not repeated herein.
As shown in fig. 2, the third switching circuit 13 employs the conventional radio frequency switching circuit 10, the third switching circuit 13 includes a seventh series radio frequency switch S31 and a fifth parallel radio frequency switch S32, the seventh series radio frequency switch S31 is disposed between the second power amplifier 22 and the first antenna 31; one end of the fifth parallel rf switch S32 is connected to the connection node between the seventh serial rf switch S31 and the first antenna 31, and the other end is connected to the ground.
In this example, when the rf signal is transmitted through the third switch circuit 13, the seventh serial rf switch S31 is closed, the fifth parallel rf switch S32 is opened, a high power/high voltage exists at the node B of the first antenna 31, so that the first serial rf switch S11, the second serial rf switch S12, the third serial rf switch S13 and the second parallel rf switch S15 in the first path are opened, and the first parallel rf switch S14 is closed to ground the high voltage in the third serial rf switch S13 and the second serial rf switch S12 through the first parallel rf switch S14. When the radio frequency signal is transmitted through the first path, the first series radio frequency switch S11, the second series radio frequency switch S12 and the third series radio frequency switch S13 are closed, the first parallel radio frequency switch S14 and the second parallel radio frequency switch S15 are opened, and a high power/high voltage exists on the node B, so that the seventh series radio frequency switch S31 in the third path is opened, the fifth parallel radio frequency switch S32 needs to be closed to ground the high voltage, and in order to resist the high power/high voltage existing on the node B of the first antenna 31, the number of transistors of the fifth parallel radio frequency switch S32 needs to be the same. It is to be understood that if other transmission paths exist on the second power amplifier 22, when the radio frequency signal is transmitted on the other transmission paths, a high power/high voltage exists between the second power amplifier 22 and the seventh serial rf switch S31, so that the seventh serial rf switch S31 in the third path is turned off, the fifth parallel rf switch S32 needs to be turned on to ground the high voltage, the seventh serial rf switch S31 has a high power/high voltage, and the number of transistors of the seventh serial rf switch S31 and the fifth parallel rf switch S32 needs to be the same.
For example, the source-drain breakdown voltage of each transistor is 4V, and if the high power/high voltage existing on the node B of the first antenna 31 is 30V, the fifth parallel radio frequency switch S32 is formed by stacking at least 8 transistors; if the high power/high voltage between the second power amplifier 22 and the seventh serial rf switch S31 is 30V, the fifth parallel rf switch S32 is formed by stacking at least 8 transistors; in order to ensure that when high-power/high-voltage rf signals exist at both ends of the third switch circuit 13 and the fifth parallel rf switch S32 needs to be capable of simultaneously withstanding the high-power/high-voltage rf signals at both ends, at least 16 transistors need to be stacked, so that in the process that the third switch circuit 13 can withstand sufficiently high voltage/power, the insertion loss introduced is the sum of insertion losses introduced by the series connection of 16 transistors, which is higher than the sum of insertion losses introduced by the series connection of 9-15 transistors in the rf switch circuit 10 provided in the above embodiment, it can be known that the rf switch circuit 10 provided in the above embodiment can ensure to withstand sufficiently high voltage/power and reduce the introduced insertion loss, and the isolation between different transmission paths is improved by optimizing the configuration of the rf switches in the transmission paths, the mutual interference of the radio frequency signals of different transmission paths is avoided.
In the rf front-end circuit provided in this embodiment, the number and distribution of the rf switches and the number of transistors of each rf switch are reasonably configured and optimized, so that each switch circuit can be guaranteed to bear a sufficiently high voltage/power and reduce the insertion loss, and the configuration of the rf switches in the transmit path is optimized, so that the isolation between different transmit paths is improved and the mutual interference between the rf signals in different transmit paths is avoided.
The wireless device provided in this embodiment includes the rf switch circuit 10 in the above embodiment, or includes the rf front-end circuit in the above embodiment. The circuit connection relationship of the radio frequency switches in the transmitting path can be reasonably configured and optimized, namely the number and distribution of the radio frequency switches and the number of transistors of each radio frequency switch are reasonably configured, so that each switch circuit can bear enough high voltage/power and reduce the introduced insertion loss, and the isolation between different transmitting paths is improved and the mutual interference of radio frequency signals of different transmitting paths is avoided by optimizing the configuration of the radio frequency switches in the transmitting path.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (12)
1. A radio frequency switch circuit is used for being connected with a radio frequency power amplifier and a radio frequency antenna and is characterized by comprising a first series radio frequency switch, a second series radio frequency switch, a third series radio frequency switch, a first parallel radio frequency switch and a second parallel radio frequency switch;
the first series radio frequency switch, the second series radio frequency switch, and the third series radio frequency switch are arranged in series between the radio frequency power amplifier and the radio frequency antenna;
one end of the first parallel radio frequency switch is connected with a connection node between the first series radio frequency switch and the second series radio frequency switch, and the other end of the first parallel radio frequency switch is connected with a grounding end;
one end of the second parallel radio frequency switch is connected with a connection node between the second series radio frequency switch and the third series radio frequency switch, and the other end of the second parallel radio frequency switch is connected with a grounding end;
the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch, the first parallel radio frequency switch and the second parallel radio frequency switch are radio frequency switches formed by a single transistor or radio frequency switches formed by at least two transistors connected in series;
the number of transistors forming the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch, the first parallel radio frequency switch and the second parallel radio frequency switch is respectively N1, N2, N3, N4 and N5, and the source-drain breakdown voltage of each transistor is VDSThe maximum voltage of the end of the first series radio frequency switch connected with the radio frequency power amplifier is V max A, and the maximum voltage of the end of the third series radio frequency switch connected with the radio frequency antenna is V max B
Wherein the content of the first and second substances,
is rounded up.
2. The RF switch circuit of claim 1, wherein the number of transistors forming the first, second, and third series RF switches is N1, N2, and N3, respectively, then N2 ≧ N1, and N2 ≧ N3.
3. The radio frequency switch circuit according to claim 2, wherein N1 is 1 and N3 is 1.
4. The radio frequency switch circuit of claim 1, wherein gate widths of transistors forming the first series radio frequency switch, the second series radio frequency switch, and the third series radio frequency switch are larger than gate widths of transistors forming the first parallel radio frequency switch and the second parallel radio frequency switch.
5. A radio frequency front end circuit, comprising a first power amplifier, a second power amplifier, a first antenna and a second antenna, wherein a first switch circuit is disposed between the first power amplifier and the first antenna, a second switch circuit is disposed between the first power amplifier and the second antenna, a third switch circuit is disposed between the second power amplifier and the first antenna, and the first switch circuit is the radio frequency switch circuit of any one of claims 1-4.
6. The RF front-end circuit of claim 5,
when the first power amplifier transmits a radio frequency signal to the first antenna through the first switch circuit, the first series radio frequency switch, the second series radio frequency switch and the third series radio frequency switch are closed, and the first parallel radio frequency switch and the second parallel radio frequency switch are opened;
when the first power amplifier transmits a radio frequency signal to the second antenna through the second switch circuit, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the first parallel radio frequency switch are opened, and the second parallel radio frequency switch is closed;
when the second power amplifier transmits a radio frequency signal to the first antenna through the third switching circuit, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the second parallel radio frequency switch are opened, and the first parallel radio frequency switch is closed.
7. A wireless device is characterized by comprising a radio frequency switch circuit, wherein the radio frequency switch circuit is used for being connected with a radio frequency power amplifier and a radio frequency antenna and comprises a first series radio frequency switch, a second series radio frequency switch, a third series radio frequency switch, a first parallel radio frequency switch and a second parallel radio frequency switch;
the first series radio frequency switch, the second series radio frequency switch, and the third series radio frequency switch are arranged in series between the radio frequency power amplifier and the radio frequency antenna;
one end of the first parallel radio frequency switch is connected with a connection node between the first series radio frequency switch and the second series radio frequency switch, and the other end of the first parallel radio frequency switch is connected with a grounding end;
one end of the second parallel radio frequency switch is connected with a connection node between the second series radio frequency switch and the third series radio frequency switch, and the other end of the second parallel radio frequency switch is connected with a grounding end;
the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch, the first parallel radio frequency switch and the second parallel radio frequency switch are radio frequency switches formed by a single transistor or radio frequency switches formed by at least two transistors connected in series;
the number of transistors forming the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch, the first parallel radio frequency switch and the second parallel radio frequency switch is respectively N1, N2, N3, N4 and N5, and the source-drain breakdown voltage of each transistor is VDSThe maximum voltage of the end of the first series radio frequency switch connected with the radio frequency power amplifier is V max A, and the maximum voltage of the end of the third series radio frequency switch connected with the radio frequency antenna is V max B
Wherein the content of the first and second substances,
is rounded up.
8. The wireless apparatus of claim 7, wherein the first series RF switch, the second series RF switch, and the third series RF switch are formed with a number of transistors N1, N2, and N3, respectively, such that N2 ≧ N1, and N2 ≧ N3.
9. The wireless apparatus of claim 8, wherein N1-1 and N3-1.
10. The wireless apparatus of claim 7, wherein gate widths of transistors forming the first series radio frequency switch, the second series radio frequency switch, and the third series radio frequency switch are greater than gate widths of transistors forming the first parallel radio frequency switch and the second parallel radio frequency switch.
11. A wireless device, comprising a radio frequency front end circuit, wherein the radio frequency front end circuit comprises a first power amplifier, a second power amplifier, a first antenna and a second antenna, wherein a first switch circuit is disposed between the first power amplifier and the first antenna, wherein a second switch circuit is disposed between the first power amplifier and the second antenna, wherein a third switch circuit is disposed between the second power amplifier and the first antenna, and wherein the first switch circuit is the radio frequency switch circuit of any one of claims 1-4.
12. The wireless apparatus of claim 11, wherein the first series radio frequency switch, the second series radio frequency switch, and the third series radio frequency switch are closed, and the first parallel radio frequency switch and the second parallel radio frequency switch are open when the first power amplifier transmits a radio frequency signal to the first antenna through the first switching circuit;
when the first power amplifier transmits a radio frequency signal to the second antenna through the second switch circuit, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the first parallel radio frequency switch are opened, and the second parallel radio frequency switch is closed;
when the second power amplifier transmits a radio frequency signal to the first antenna through the third switching circuit, the first series radio frequency switch, the second series radio frequency switch, the third series radio frequency switch and the second parallel radio frequency switch are opened, and the first parallel radio frequency switch is closed.
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| CN202110657213.1A CN113395081B (en) | 2020-09-30 | 2020-09-30 | Radio frequency switch circuit, radio frequency front end circuit and wireless device |
| CN202011066045.0A CN112235013B (en) | 2020-09-30 | 2020-09-30 | Radio frequency switch circuit, radio frequency front end circuit and wireless device |
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| CN101102103A (en) * | 2006-05-31 | 2008-01-09 | 松下电器产业株式会社 | Radio frequency switching circuit, radio frequency switching device, and transmitter module device |
| CN101702627B (en) * | 2009-10-29 | 2012-10-03 | 华东师范大学 | CMOS radio frequency (RF) switch based on silicon-on-insulator (SOI) technology |
| US8995944B2 (en) * | 2010-12-09 | 2015-03-31 | Rf Micro Devices, Inc. | Radio frequency switch for suppressing intermodulation |
| CN103490794B (en) * | 2013-09-09 | 2015-04-22 | 熊猫电子集团有限公司 | Variable shortwave antenna tuner matching network structure circuit |
| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
| CN104953996B (en) * | 2015-06-29 | 2018-01-09 | 中国电子科技集团公司第二十四研究所 | A kind of high-isolation radio-frequency switch circuit |
| CN108173568B (en) * | 2017-12-11 | 2021-03-05 | 大连昊洋科技发展有限公司 | High-power high-speed radio frequency transceiving switching device and method and wireless communication system |
| CN207587973U (en) * | 2017-12-19 | 2018-07-06 | 无锡中普微电子有限公司 | A kind of antenna tuning circuit |
| CN110572167B (en) * | 2019-09-09 | 2021-07-20 | 广州粒子微电子有限公司 | Radio frequency front end transmitting circuit, radio frequency front end receiving circuit and radio frequency front end circuit |
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Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Patentee after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Patentee before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
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