CN112216763A - Terahertz radio frequency signal detector based on super-surface optical antenna and preparation method - Google Patents
Terahertz radio frequency signal detector based on super-surface optical antenna and preparation method Download PDFInfo
- Publication number
- CN112216763A CN112216763A CN202011155904.3A CN202011155904A CN112216763A CN 112216763 A CN112216763 A CN 112216763A CN 202011155904 A CN202011155904 A CN 202011155904A CN 112216763 A CN112216763 A CN 112216763A
- Authority
- CN
- China
- Prior art keywords
- layer
- super
- optical antenna
- surface optical
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 141
- 238000002360 preparation method Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 164
- 229910052751 metal Inorganic materials 0.000 claims abstract description 138
- 239000002184 metal Substances 0.000 claims abstract description 138
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 82
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 21
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 17
- 238000001259 photo etching Methods 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/02—Refracting or diffracting devices, e.g. lens, prism
- H01Q15/10—Refracting or diffracting devices, e.g. lens, prism comprising three-dimensional array of impedance discontinuities, e.g. holes in conductive surfaces or conductive discs forming artificial dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a terahertz radio frequency signal detector based on a super-surface optical antenna and a preparation method thereof, wherein the detector comprises: the device comprises a substrate, a doping layer, a silicon dioxide layer, a super-surface optical antenna layer, an ohmic electrode, a Schottky electrode and a common electrode; the super-surface optical antenna layer is 2-100 mm in width and comprises a first metal layer and a second metal layer, wherein the first metal layer is used for detecting signals of a radio frequency S wave band, a C wave band or an X wave band, and the second metal layer is used for detecting signals of a terahertz wave band. In addition, the super-surface optical antenna is manufactured by adopting a nano process, so that the terahertz radio frequency signal detector is small in size and light in weight.
Description
Technical Field
The invention belongs to the technical field of signal detection, and particularly relates to a terahertz radio frequency signal detector based on a super-surface optical antenna and a preparation method thereof.
Background
Terahertz radio frequency S/C/X wave band detection is widely applied to a plurality of fields such as security check monitoring systems, space communication, aerospace, radar and the like.
The common terahertz radio frequency S/C/X wave band detector mainly comprises a scanning subsystem, a receiver subsystem and a calibration subsystem, wherein a detection device needs to be provided with a complex and precise servo, driving or scanning mechanism, and has large volume and mass and slow response. Therefore, the performance of the existing terahertz radio frequency S/C/X wave band detector is insufficient on the occasions requiring high-speed, high-sensitivity and small-miniaturization signal detection. The main reason is that the existing terahertz radio frequency S/C/X waveband detector has the following problems: 1. the spectrum imaging device of the terahertz radio frequency S/C/X wave band detector still needs to be provided with a complex and precise driving mechanism, and has large volume and mass; 2. the response speed of the terahertz radio frequency S/C/X wave band detector is low; 3. the spectrum detection range of the terahertz radio frequency S/C/X band detector cannot be easily expanded.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a terahertz radio frequency signal detector based on a super-surface optical antenna and a preparation method thereof, and aims to solve the technical problems of large volume, slow response, narrow detection waveband and the like in the existing terahertz radio frequency S/C/X waveband signal detector.
To achieve the above object, according to one aspect of the present invention, there is provided a terahertz radio frequency signal detector based on a super-surface optical antenna, including: the substrate, the doping layer and the silicon dioxide layer are sequentially arranged from bottom to top, the super-surface optical antenna layer and the ohmic electrode are positioned on the doping layer, and the Schottky electrode and the common electrode are positioned on the silicon dioxide layer; the super-surface optical antenna layer and the doping layer form Schottky contact, and the ohmic electrode and the doping layer form ohmic contact; the super-surface optical antenna layer is 2-100 mm in width and comprises a first metal layer and a second metal layer; the first metal layer has local surface plasmon characteristics for incident radio frequency S-band, C-band or X-band electromagnetic waves, and the second metal layer has local surface plasmon characteristics for incident terahertz electromagnetic waves; the first metal layer and the second metal layer are located on the same layer, or the first metal layer and the second metal layer are distributed in a superposition mode.
Further, the first metal layer is composed of periodically arranged micro-elements, and the micro-elements are micro-structures; when the micrometer elements are parallel to the doped layer, the first metal layer is of a plane structure, and at the moment, the micrometer elements are of an arc structure; when the micrometer elements are vertical to the doped layer, the first metal layer is of a three-dimensional structure, and at the moment, the micrometer elements are of a conical structure or a prismatic table structure with an arc-shaped upper bottom surface.
Further, when the micrometer element is in a frustum pyramid structure with an arc-shaped upper bottom surface, the number of edges is 3 or 4, the radian of the upper bottom surface is 10-180 degrees, the side length of the lower bottom surface is 10-100 micrometers, and the slant height is 1-100 micrometers; when the micro-element is a conical structure, the diameter of the bottom surface is 10-100 μm, the height is 1-100 μm, and the angle of the cone angle is 10-60 degrees.
Further, the second metal layer comprises a micrometer element and a plurality of metal nano-tip units; wherein the micrometer element is a micrometer structure and is polygonal in shape; the metal nano-tip units are distributed on the inner side or the outer side of each side of the micrometer element and have local surface plasmon characteristics for incident terahertz signals; the width of a single metal nano-tip unit is 20-80 nm, the height is 80-300 nm, the sharp angle is 10-60 degrees, and the distance between adjacent metal nano-tip units is 30-150 nm; or the second metal layer comprises a plurality of three-dimensional structural units which are periodically arranged; the three-dimensional structure unit is of a vertical frustum pyramid structure, the angle of a sharp corner formed by intersecting reverse extension lines of edges is 10-90 degrees, the side length of a lower bottom surface is 200 nm-30 micrometers, the side length of an upper bottom surface is 50 nm-10 micrometers, and the height is 300 nm-5 micrometers.
Further, the substrate layer is semi-insulating gallium arsenide, silicon or aluminum oxide, and the thickness of the substrate layer is 200-500 microns; the doped layer is N-type gallium arsenide or P-type gallium arsenide, the thickness is 1-2 μm, and the doping concentration is 1 multiplied by 1016cm-3～9×1018cm-3(ii) a The ohmic electrode is made of nickel, germanium and gold, and the thicknesses of the ohmic electrode are 20-80 nm, 100-300 nm and 20-80 nm respectively; the Schottky electrode is made of titanium and gold, and the thicknesses of the Schottky electrode are 20-80 nm and 100-250 nm respectively; the common electrode is made of titanium and gold, and the thicknesses of the common electrode are 20-80 nm and 100-250 nm respectively.
According to another aspect of the invention, a method for preparing a terahertz radio-frequency signal detector based on a super-surface optical antenna is provided, which comprises the following steps:
s1, injecting doping ions on the substrate layer through a metal organic compound chemical vapor deposition method to form a doping layer; s2, preparing a silicon dioxide layer on the doped layer by a plasma enhanced chemical vapor deposition method; s3, forming an ohmic electrode contact hole on the silicon dioxide layer through a positive photoresist process and etching treatment; forming an ohmic electrode at the contact hole of the ohmic electrode by a negative glue process and an electron beam evaporation method; s4, forming a Schottky contact hole on the silicon dioxide layer through a positive photoresist process and etching treatment; s5, forming a Schottky electrode and a common electrode on the silicon dioxide layer by a negative glue process and an electron beam evaporation method; s6, preparing a super-surface optical antenna layer on the silicon dioxide layer, wherein the super-surface optical antenna layer and the doping layer form a Schottky contact through a Schottky contact hole.
According to another aspect of the invention, a terahertz radio frequency signal detector based on a super-surface optical antenna is provided, which comprises: the device comprises a substrate layer, a first doping layer, a first silicon dioxide layer, a first super-surface optical antenna layer, a first ohmic electrode, a first Schottky electrode, a first common electrode, a second doping layer, a second silicon dioxide layer, a second super-surface optical antenna layer, a second ohmic electrode, a second Schottky electrode and a second common electrode; the first doping layer is located on the substrate layer, the first silicon dioxide layer, the first super-surface optical antenna layer and the first ohmic electrode are located on the first doping layer, and the first Schottky electrode and the first common electrode are located on the first silicon dioxide layer; the first Schottky electrode and the first common electrode are both connected with the first super-surface optical antenna layer, the first super-surface optical antenna layer forms Schottky contact with the first doped layer, and the first ohmic electrode forms ohmic contact with the first doped layer; the second doping layer is positioned below the substrate layer, the second silicon dioxide layer, the second super-surface optical antenna layer and the second ohmic electrode are positioned below the second doping layer, and the second Schottky electrode and the second common electrode are positioned below the second silicon dioxide layer; the second Schottky electrode and the second common electrode are both connected with the second super-surface optical antenna layer, the second super-surface optical antenna layer forms Schottky contact with the second doped layer, and the second ohmic electrode forms ohmic contact with the second doped layer; the width of the first super-surface optical antenna layer is 5-100 mm, and the first super-surface optical antenna layer has local surface plasmon characteristics for incident radio frequency S-band, C-band or X-band electromagnetic waves; the width of the second super-surface optical antenna layer is 2-10 mm, and the second super-surface optical antenna layer has local surface plasmon characteristics for incident terahertz electromagnetic waves.
Further, the first super-surface optical antenna layer is composed of periodically arranged micro-elements, and the micro-elements are micro-structures; when the micrometer elements are parallel to the doping layer, the first super-surface optical antenna layer is of a planar structure, and at the moment, the micrometer elements are of an arc-shaped structure; when the micrometer elements are vertical to the doping layer, the first super-surface optical antenna layer is of a three-dimensional structure, and at the moment, the micrometer elements are of a conical structure or of a prismatic table structure with an arc-shaped upper bottom surface; when the micrometer element is in a frustum pyramid structure with an arc-shaped upper bottom surface, the number of edges is 3 or 4, the radian of the upper bottom surface is 10-180 degrees, the side length of the lower bottom surface is 10-100 micrometers, and the slant height is 1-100 micrometers; when the micro-element is a conical structure, the diameter of the bottom surface is 10-100 μm, the height is 1-100 μm, and the angle of the cone angle is 10-60 degrees.
Further, the second super-surface optical antenna layer comprises micro-elements and a plurality of metal nano-tip units; wherein the micrometer element is a micrometer structure and is polygonal in shape; the metal nano-tip units are distributed on the inner side or the outer side of each side of the micrometer element and have local surface plasmon characteristics for incident terahertz signals; the width of a single metal nano-tip unit is 20-80 nm, the height is 80-300 nm, the sharp angle is 10-60 degrees, and the distance between adjacent metal nano-tip units is 30-150 nm; or the second super-surface optical antenna layer comprises a plurality of three-dimensional structural units which are periodically arranged; the three-dimensional structure unit is of a vertical frustum pyramid structure, the angle of a sharp corner formed by intersecting reverse extension lines of edges is 10-90 degrees, the side length of a lower bottom surface is 200 nm-30 micrometers, the side length of an upper bottom surface is 50 nm-10 micrometers, and the height is 300 nm-5 micrometers.
According to another aspect of the invention, a method for preparing a terahertz radio-frequency signal detector based on a super-surface optical antenna is provided, which comprises the following steps:
s1, injecting doping ions on the substrate layer through a metal organic compound chemical vapor deposition method to form a first doping layer; s2, preparing a first silicon dioxide layer on the first doped layer by a plasma enhanced chemical vapor deposition method; s3, forming a first ohmic electrode contact hole on the first silicon dioxide layer through a positive photoresist process and corrosion treatment; forming a first ohmic electrode at the first ohmic electrode contact hole by a negative glue process and an electron beam evaporation method; s4, forming a first Schottky contact hole on the first silicon dioxide layer through a positive photoresist process and etching treatment; s5, forming a first Schottky electrode and a first common electrode on the first silicon dioxide layer by a negative photoresist process and an electron beam evaporation method; s6, preparing a first super-surface optical antenna layer on the first silicon dioxide layer, wherein the first super-surface optical antenna layer and the first doping layer form Schottky contact through a first Schottky contact hole; s7, forming the second doping layer, the second super surface optical antenna layer, the second silicon dioxide layer, the second ohmic electrode, the second Schottky electrode and the second common electrode below the substrate layer based on the operations of the steps S1 to S6.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
(1) in the terahertz radio frequency signal detector based on the super-surface optical antenna, the super-surface optical antenna layer is 2-100 mm in width and comprises a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are respectively used for detecting radio frequency signals, and detecting terahertz signals; the detector can better distinguish the electromagnetic signals of the terahertz radio frequency wave band.
(2) In the other terahertz radio-frequency signal detector based on the super-surface optical antenna, the two surfaces are used for processing incident signals of corresponding frequency bands respectively, so that the contact area of the super-surface optical antenna can be increased.
(3) According to the terahertz radio-frequency signal detector based on the super-surface optical antenna, when the metal nano-tip units are of a planar structure, the optical antenna further comprises the micrometer units, and each metal nano-tip unit is distributed on the outer side or the inner side of each edge of the micrometer unit to form a micro-nano structure, so that the cost of the terahertz radio-frequency signal detector is greatly reduced on the premise of meeting the requirement of better detection performance; when the metal nano-tip unit is of a three-dimensional structure, the three-dimensional structure is in the shape of a frustum of a pyramid, so that the incident radio frequency or terahertz signal has the characteristic of local surface plasmon and the energy is concentrated on the pyramid, and the detection is facilitated.
(4) The terahertz radio frequency signal detector based on the super-surface optical antenna only needs a small amount of electronic resources such as low-voltage direct current or alternating current signals to assist the terahertz radio frequency signal detector in working, and therefore peripheral circuit resources are saved.
Drawings
FIG. 1 is a schematic longitudinal cross-sectional view of a terahertz radio-frequency signal detector based on a super-surface optical antenna according to an embodiment of the present invention;
fig. 2 is a schematic plan view of a first metal layer according to an embodiment of the invention;
fig. 3 is a schematic perspective view of a first metal layer according to an embodiment of the invention;
fig. 4 is a schematic view of a planar micro-nano structure of a second metal layer according to a first embodiment of the present invention;
fig. 5 is a schematic structural parameter diagram of a metal nanotip unit in a micro-nano structure according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a metal unit with a three-dimensional metal nano-tip of a second metal layer and a structure thereof according to an embodiment of the present invention;
FIGS. 7 to 9 are schematic diagrams illustrating different distributions of a first metal layer and a second metal layer in three types of super-surface optical antenna layers according to an embodiment of the present invention;
FIG. 10 is a schematic longitudinal cross-sectional view of a terahertz radio-frequency signal detector based on a super-surface optical antenna according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example one
Referring to fig. 1, a terahertz radio frequency signal detector based on a super-surface optical antenna includes: the optical antenna comprises a substrate layer 1, a doping layer 2, a silicon dioxide layer 3, a super-surface optical antenna layer 4, an ohmic electrode 5, a Schottky electrode 6 and a common electrode 7. The doping layer 2 is formed on the substrate layer 1, the silicon dioxide layer 3 is formed on the doping layer 2, the super-surface optical antenna layer 4 is formed on the doping layer 2, the ohmic electrode 5 is formed on the doping layer 2, the schottky electrode 6 is formed on the silicon dioxide layer 3, the common electrode 7 is formed on the silicon dioxide layer 3, the ohmic electrode 5 and the schottky electrode 6 are respectively located at the left end and the right end of the super-surface optical antenna layer 4, and the common electrode 7 and the schottky electrode 6 are respectively located at the left end and the right end of the super-surface optical antenna layer 4. The Schottky electrode 6 and the common electrode 7 are both connected with the super-surface optical antenna layer 4, the super-surface optical antenna layer 4 is in Schottky contact with the doping layer 2, and the ohmic electrode 5 is in ohmic contact with the doping layer 2.
Specifically, the substrate layer 1 can be selected from but not limited to semi-insulating gallium arsenide, silicon, aluminum oxide and the like, and the thickness is 200-500 μm. When the substrate is a GaAs substrate, the doping layer is an N-type GaAs layer or a P-type GaAs layer; when the substrate is a Si substrate, the doped layer is an N-type Si layer or a P-type Si layer. Wherein, when the doped layer is N-type, phosphorus (P) which is a pentavalent impurity element can be selected as a dopant; when the doped layer is of a P type, a trivalent impurity element boron (B) can be selected as a dopant; the thickness of the doped layer 2 is 1-2 μm, and the doping concentration is 1 × 1016cm-3～9×1018cm-3。
The ohmic electrode 5 can be selected from but not limited to nickel, germanium and gold, and the thickness of the ohmic electrode is preferably 20-80 nm, 100-300 nm and 20-80 nm; the Schottky electrode 6 can be selected from but not limited to titanium and gold, and the thickness of the Schottky electrode is preferably 20-80 nm and 100-250 nm; the common electrode 7 can be selected from titanium and gold, but is not limited to titanium and gold, and the thickness of the common electrode is preferably 20-80 nm and 100-250 nm.
The super-surface optical antenna layer 4 is 2-100 mm wide and comprises a first metal layer and a second metal layer; the first metal layer has local surface plasmon characteristics for incident radio frequency S-band, C-band or X-band electromagnetic waves, and the second metal layer has local surface plasmon characteristics for incident terahertz electromagnetic waves; the first metal layer and the second metal layer are located on the same layer and are distributed in a blocking mode to independently receive corresponding signals, or the first metal layer and the second metal layer are distributed in a superposition mode and do not need to consider the signal receiving direction and position, receiving is achieved together, and efficiency is high.
Specifically, the first metal layer is of a planar structure or a three-dimensional structure and comprises a plurality of first metal arrays, each first metal array is composed of periodically arranged micrometer elements, and the distance between the micrometer elements is 50-500 micrometers; wherein, the silicon dioxide of the silicon dioxide layer carries out insulation treatment on gaps among the micrometer elements; the micrometer elements are of a micrometer structure, materials can be titanium and gold, and the micrometer elements are connected through metal sheets or metal wires. Specifically, when the micrometer elements are parallel to the doped layer, the first metal layer is of a planar structure, and at the time, the micrometer elements are of an arc-shaped structure, as shown in fig. 2, the arc of the arc-shaped structure is 10-120 degrees, the length of the arc-shaped structure is 10-500 micrometers, and the width of the arc-shaped structure is 50-500 micrometers; when the micrometer element is vertical to the doped layer, the first metal layer is of a three-dimensional structure, and at the moment, the micrometer element is of a conical structure or a prismatic table structure with an arc-shaped upper bottom surface. For the micrometer element with the frustum pyramid structure with the arc-shaped upper bottom surface, the number of the edges is 3 or 4, as shown in fig. 3, the number of the edges in the embodiment is 4, the radian beta of the upper bottom surface is 10-180 degrees, the side lengths a1 and b1 of the lower bottom surface are 10-100 μm, and the slant height h is 1-100 μm. For the conical micro-element, the diameter of the bottom surface is 10-100 μm, the height is 1-100 μm, and the angle of the cone angle is 10-60 degrees.
Referring to fig. 4, the second metal layer includes a plurality of second metal arrays, each second metal array including a micro cell and a plurality of metal nanopip units; wherein the micrometer element is a micrometer structure and is polygonal in shape; it should be noted that the micro-elements may also be arc-shaped structures; the metal nano-tip units are distributed on the inner side or the outer side of each side of the micrometer element and have local surface plasmon characteristics for incident terahertz signals. In the embodiment, the micron element is rectangular, and the metal nano-tip units are distributed on the outer sides of four sides of the micron element to form a micro-nano structure, so that the cost of the detector is greatly reduced on the premise of meeting the requirement of better detection performance. It should be noted that adjacent metal nanopip units in the super-surface optical antenna layer need not be connected. Referring to fig. 5, the width d of a single metal nanopipette unit in the second metal layer is 20-80 nm, the height h is 80-300 nm, the tip angle θ is 10-60 degrees, and the pitch p of the metal nanopipette units is 30-150 nm, so that the detector operates in the terahertz band. Or the second metal layer comprises a plurality of three-dimensional structural units which are periodically arranged; the three-dimensional structural unit is of a vertical frustum pyramid structure, and the number of edges is preferably 4 or 5. Referring to fig. 6, taking N as an example, the sharp angle α of the extended line of the frustum is 10 to 90 degrees, the bottom a1 and b1 are 200nm to 30 μm, the top a2 and b2 are 50nm to 10 μm, and the height h is 300nm to 5 μm; because the three-dimensional structure unit is in the shape of a frustum of a pyramid, the incident terahertz signal has the characteristic of local surface plasmon and the energy is concentrated on the pyramid, so that the detection is more facilitated.
Further, when the first metal layer and the second metal layer are located in the same layer, each first metal array 41 in the first metal layer is intensively distributed in the middle area of the super-surface optical antenna layer 4, and each second metal array 42 in the second metal layer is distributed in the peripheral area of the super-surface optical antenna layer 4, so as to jointly form an array structure, as shown in fig. 7; or, when the first metal layer and the second metal layer are located in the same layer, each first metal array 41 in the first metal layer is distributed in the left area of the super-surface optical antenna layer 4 in a concentrated manner, and each second metal array 42 in the second metal layer is distributed in the right area of the super-surface optical antenna layer 4, as shown in fig. 8; or, the first metal layer and the second metal layer can also be arranged in a mixed manner, and the arrangement sequence of the metal layers is arbitrary, so that the function of the whole optical antenna is conveniently expanded; alternatively, the first metal layer and the second metal layer are distributed in a stacked manner, as shown in fig. 9.
Further, by setting the size of the first metal layer in the super-surface optical antenna layer 4 to be millimeter-to-centimeter-sized (specifically, the width of the first metal layer is 5-100 mm), and setting corresponding geometric parameters for the micrometer elements, the first metal layer has extremely strong local surface plasmon induction capability on the incident electromagnetic wave signals 8 in the radio frequency S-band, C-band or X-band; meanwhile, the period and the number of the metal nano-tip units in the second metal layer and the geometric parameters of the metal nano-tip units are set, the sharpness and the nano-tip electron concentration of the nano-tips in the second metal layer are changed, the nano-tip signal intensity is further controlled, and accurate detection of terahertz radio-frequency signals is achieved. Under the condition of small interference of a conventional background and an environmental signal, 2V voltage with a load resistor is applied to the Schottky electrode 6 and the common electrode 7, so that the electron concentration and the signal intensity of the nano-tip are enhanced, and the metal nano-tip can detect a terahertz radio frequency electromagnetic wave signal; under the condition that an incident electromagnetic wave signal is weak, 0.1-5V reverse direct current bias is applied to the Schottky electrode 6 and the Schottky electrode 5, so that the width of a depletion layer in the contact area of metal of the super-surface optical antenna layer 4 and the doping layer 2 is increased, the intensity of a sharp receiving signal of the super-surface optical antenna layer 4 is enhanced, and terahertz radio frequency signal detection is realized.
Example two
The preparation method of the terahertz radio-frequency signal detector based on the super-surface optical antenna comprises the following steps of:
s1, implanting Si ions with a doping concentration of 1 × 10 on the substrate 1 by MOCVD16cm-3～9×1018cm-3Thereby forming a doped layer 2 with a thickness of 1 μm to 2 μm; in this embodiment, the substrate layer 1 is a semi-insulating gallium arsenide, and the doped layer 2 is an N-type gallium arsenide;
s2, preparing a silicon dioxide layer 3 on the doped layer 2 by a plasma enhanced chemical vapor deposition method, wherein the thickness of the silicon dioxide layer is 100 nm-300 nm;
s3, photoetching an ohmic electrode contact hole pattern on the silicon dioxide layer 3 through a positive photoresist process, and corroding the silicon dioxide layer at the position of the ohmic electrode contact hole pattern by adopting a wet corrosion process, wherein the corrosion depth is the thickness of the silicon dioxide layer, so as to obtain an ohmic electrode contact hole; photoetching an ohmic electrode pattern by a negative photoresist process, sequentially evaporating and stacking Ni/Ge/Au layers (the thicknesses of the Ni/Ge/Au layers are respectively 20-80 nm/100-300 nm/20-80 nm) by adopting an electron beam evaporation method, stripping off redundant metal and photoresist, and forming an ohmic electrode 5 in ohmic contact with the doping layer 2 at an ohmic electrode contact hole after annealing the alloy;
s4, photoetching a Schottky contact hole pattern on the silicon dioxide layer through a positive photoresist process, and corroding the silicon dioxide layer at the position of the Schottky contact hole pattern by adopting a wet corrosion process, wherein the corrosion depth is greater than the thickness of the silicon dioxide layer, so as to form a Schottky contact hole;
s5, respectively photoetching a Schottky electrode pattern and a common electrode pattern on the silicon dioxide layer 3 through a negative photoresist process, sequentially evaporating the stacked Ti/Au layers (the thicknesses of the Ti/Au layers are respectively 100-250 nm/20-80 nm) by adopting an electron beam evaporation method, and respectively forming a Schottky electrode 6 and a common electrode 7 after stripping off redundant metal and photoresist;
s6, preparing the super-surface optical antenna layer with the width of 2-100 mm on the silicon dioxide layer 3. The super-surface optical antenna layer 4 is directly contacted with the doping layer 2, the Schottky electrode 6 is located on the silicon dioxide layer 3, the distance between the Schottky electrode 6 and the super-surface optical antenna layer 4 is 1-5 mm, the common electrode 7 is located on the silicon dioxide layer 3, and the distance between the common electrode 7 and the super-surface optical antenna layer 4 is 1-5 mm.
Further, when the second metal layer includes micro cells, the method further includes a step S7, which is located between the steps S4 and S5;
the step S7 includes: and photoetching a structural pattern of a micron element in the second metal layer on the silicon dioxide layer by adopting a positive photoresist process, forming the micron element by adopting an electron beam evaporation method, and forming Schottky contact between the micron element and the doped layer through a Schottky contact hole.
Further, the step S6 includes:
s61, for the metal nano-tip units with the plane structure, photoetching a plane graph formed by the metal nano-tips on the silicon dioxide layer 3 by an electron beam exposure method, and etching the silicon dioxide layer by using the graph as a mask and adopting an inductive coupling plasma etching method or a reactive ion etching method to generate the plane structure formed by the metal nano-tip units; for the metal nano-tip units with the three-dimensional structure, after a square mask is generated on the silicon dioxide layer 3 by an electron beam lithography method or a parallel ion beam lithography method, the three-dimensional structure formed by the metal nano-tip units is generated by inductively coupled ion beam etching;
and S62, sequentially evaporating the stacked Ti/Au layers by an electron beam evaporation method or a magnetron sputtering film plating method to obtain a super-surface optical antenna layer with the width of 0.5-10 mm, wherein the super-surface optical antenna layer and the doping layer form Schottky contact through a Schottky contact hole.
The invention adopts an integrated structure of a common circuit and a Schottky diode, takes a super-surface optical antenna layer as a photosensitive (wave) medium, and obtains signal detection capability through a local surface plasmon effect at a nano-tip; the preparation scheme is integrated in a device with single-chip gallium arsenide as a substrate, and the terahertz radio frequency signal detector based on the super-surface optical antenna is realized.
EXAMPLE III
Referring to fig. 10, the embodiment provides another terahertz radio frequency signal detector based on a super-surface optical antenna, including: the device comprises a substrate layer, a first doping layer, a first silicon dioxide layer, a first super-surface optical antenna layer, a first ohmic electrode, a first Schottky electrode, a first common electrode, a second doping layer, a second silicon dioxide layer, a second super-surface optical antenna layer, a second ohmic electrode, a second Schottky electrode and a second common electrode; the first doping layer is located on the substrate layer, the first silicon dioxide layer, the first super-surface optical antenna layer and the first ohmic electrode are located on the first doping layer, and the first Schottky electrode and the first common electrode are located on the first silicon dioxide layer; the first Schottky electrode and the first common electrode are both connected with the first super-surface optical antenna layer, the first super-surface optical antenna layer forms Schottky contact with the first doped layer, and the first ohmic electrode forms ohmic contact with the first doped layer; the second doping layer is positioned below the substrate layer, the second silicon dioxide layer, the second super-surface optical antenna layer and the second ohmic electrode are positioned below the second doping layer, and the second Schottky electrode and the second common electrode are positioned below the second silicon dioxide layer; the second Schottky electrode and the second common electrode are both connected with the second super-surface optical antenna layer, the second super-surface optical antenna layer forms Schottky contact with the second doped layer, and the second ohmic electrode forms ohmic contact with the second doped layer; the width of the first super-surface optical antenna layer is 5-100 mm, and the first super-surface optical antenna layer has local surface plasmon characteristics for incident radio frequency S-band, C-band or X-band electromagnetic waves; the width of the second super-surface optical antenna layer is 2-10 mm, and the second super-surface optical antenna layer has local surface plasmon characteristics for incident terahertz electromagnetic waves.
Specifically, the first super-surface optical antenna layer is of a planar structure or a three-dimensional structure and is composed of periodically arranged micron elements, the micron elements are connected in parallel, one end of each micron element is connected with the first Schottky electrode, the other end of each micron element is connected with the first common electrode, and gaps among the micron elements are subjected to insulation treatment by silicon dioxide of the silicon dioxide layer; the micrometer elements are of a micrometer structure, materials can be titanium and gold, and the micrometer elements are connected through metal sheets or metal wires. Specifically, when the micrometer elements are parallel to the doping layer, the first super-surface optical antenna layer is of a planar structure, and at this time, the micrometer elements are of an arc-shaped structure, as shown in fig. 2; when the micrometer element is vertical to the doping layer, the first super-surface optical antenna layer is of a three-dimensional structure, and at the moment, the micrometer element is of a conical structure or a prismatic table structure with an arc-shaped upper bottom surface. For the micrometer element with the frustum pyramid structure with the arc-shaped upper bottom surface, the number of the edges is 3 or 4, as shown in fig. 3, the number of the edges in the embodiment is 4, the radian beta of the upper bottom surface is 10-180 degrees, the side lengths a1 and b1 of the lower bottom surface are 10-100 μm, and the slant height h is 1-100 μm. For the conical micro-element, the diameter of the bottom surface is 10-100 μm, the height is 1-100 μm, and the angle of the cone angle is 10-60 degrees.
Referring to fig. 4, the second super-surface optical antenna layer includes micro-elements and a plurality of metal nanopip units; wherein the micrometer element is a micrometer structure and is polygonal in shape; it should be noted that the micro-elements may also be arc-shaped structures; the metal nano-tip units are distributed on the inner side or the outer side of each side of the micrometer element and have local surface plasmon characteristics for incident terahertz signals. In the embodiment, the micron element is rectangular, and the metal nano-tip units are distributed on the outer sides of four sides of the micron element to form a micro-nano structure, so that the cost of the detector is greatly reduced on the premise of meeting the requirement of better detection performance. It should be noted that adjacent metal nanopip units in the second super-surface optical antenna layer do not need to be connected. Referring to fig. 5, the width d of a single metal nanopoint unit in the second super-surface optical antenna layer is 20 to 80nm, the height h is 80 to 300nm, the tip angle θ is 10 to 60 degrees, and the pitch p of the metal nanopoint units is 30 to 150nm, so that the detector operates in the terahertz band. Or the second super-surface optical antenna layer comprises a plurality of three-dimensional structural units which are periodically arranged; the three-dimensional structural unit is of a vertical frustum pyramid structure, and the number of edges is preferably 4 or 5. Referring to fig. 6, taking N as an example, the sharp angle α of the extended line of the frustum is 10 to 90 degrees, the bottom a1 and b1 are 200nm to 30 μm, the top a2 and b2 are 50nm to 10 μm, and the height h is 300nm to 5 μm; because the three-dimensional structure unit is in the shape of a frustum of a pyramid, the incident terahertz signal has the characteristic of local surface plasmon and the energy is concentrated on the pyramid, so that the detection is more facilitated.
Further, the first super-surface optical antenna layer has extremely strong local surface plasmon induction capability on incident electromagnetic wave signals 8 of a radio frequency S wave band, a radio frequency C wave band or a radio frequency X wave band by setting the size of the first super-surface optical antenna layer to be millimeter-centimeter-sized (specifically, the width of the first metal layer is 5-100 mm) and setting corresponding geometric parameters for the micrometer elements; meanwhile, the period and the number of the metal nano-tip units in the second super-surface optical antenna layer and the geometric parameters of the metal nano-tip units are set, the sharpness and the nano-tip electron concentration of the nano-tips in the second super-surface optical antenna layer are changed, the nano-tip signal intensity is further controlled, and accurate detection of terahertz radio-frequency signals is achieved. Under the condition of small interference of a conventional background and an environmental signal, 2V voltage with a load resistor is applied to the Schottky electrode 6 and the common electrode 7, so that the electron concentration and the signal intensity of the nano-tip are enhanced, and the metal nano-tip can detect a terahertz radio frequency electromagnetic wave signal; under the condition that an incident electromagnetic wave signal is weak, 0.1-5V reverse direct current bias is applied to the Schottky electrode 6 and the Schottky electrode 5, so that the width of a depletion layer in the contact area of metal of the super-surface optical antenna layer 4 and the doping layer 2 is increased, the intensity of a sharp receiving signal of the super-surface optical antenna layer 4 is enhanced, and terahertz radio frequency signal detection is realized.
Example four
A preparation method of a terahertz radio-frequency signal detector based on a super-surface optical antenna provided by the third embodiment comprises the following steps:
s1, implanting Si ions with a doping concentration of 1 × 10 on the substrate 1 by MOCVD16cm-3～9×1018cm-3Thereby forming a first doped layer 2 having a thickness of 1 μm to 2 μm; in this embodiment, the substrate layer 1 is a semi-insulating gallium arsenide, and the first doping layer 2 is an N-type gallium arsenide;
s2, preparing a first silicon dioxide layer 3 on the first doping layer 2 by a plasma enhanced chemical vapor deposition method, wherein the thickness of the first silicon dioxide layer is 100 nm-300 nm;
s3, photoetching an ohmic electrode contact hole pattern on the first silicon dioxide layer 3 through a positive photoresist process, and corroding the first silicon dioxide layer at the position of the ohmic electrode contact hole pattern by adopting a wet corrosion process, wherein the corrosion depth is the thickness of the first silicon dioxide layer, so as to obtain a first ohmic electrode contact hole; photoetching a first ohmic electrode pattern by a negative photoresist process, sequentially evaporating and stacking Ni/Ge/Au layers (the thicknesses of the Ni/Ge/Au layers are respectively 20-80 nm/100-300 nm/20-80 nm) by an electron beam evaporation method, stripping off redundant metal and photoresist, and forming a first ohmic electrode 5 in ohmic contact with the first doping layer 2 at an ohmic electrode contact hole after annealing the alloy;
s4, photoetching a first Schottky contact hole pattern on the first silicon dioxide layer through a positive photoresist process, and etching the first silicon dioxide layer at the position of the first Schottky contact hole pattern by adopting a wet etching process, wherein the etching depth is greater than the thickness of the first silicon dioxide layer, so as to form a first Schottky contact hole;
s5, respectively photoetching a first Schottky electrode pattern and a first common electrode pattern on the first silicon dioxide layer 3 through a negative photoresist process, sequentially evaporating the stacked Ti/Au layers (the thicknesses of the Ti/Au layers are respectively 100-250 nm/20-80 nm) by adopting an electron beam evaporation method, and respectively forming a first Schottky electrode 6 and a first common electrode 7 after stripping off redundant metal and photoresist;
s6, preparing a first super-surface optical antenna layer on the first silicon dioxide layer 3. The first super-surface optical antenna layer 4 is directly contacted with the first doping layer 2, the first Schottky electrode 6 is located on the first silicon dioxide layer 3, the distance between the first Schottky electrode 6 and the first super-surface optical antenna layer 4 is 1-5 mm, the first common electrode 7 is located on the first silicon dioxide layer 3, and the distance between the first common electrode 7 and the first super-surface optical antenna layer 4 is 1-5 mm.
S7, forming the second doping layer, the second silicon dioxide layer, the second super surface optical antenna layer, the second ohmic electrode, the second Schottky electrode and the second common electrode below the substrate layer based on the operations of the steps S1 to S6.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A terahertz radio frequency signal detector based on a super-surface optical antenna is characterized by comprising: the substrate, the doping layer and the silicon dioxide layer are sequentially arranged from bottom to top, the super-surface optical antenna layer and the ohmic electrode are positioned on the doping layer, and the Schottky electrode and the common electrode are positioned on the silicon dioxide layer; the super-surface optical antenna layer and the doping layer form Schottky contact, and the ohmic electrode and the doping layer form ohmic contact;
the super-surface optical antenna layer is 2-100 mm in width and comprises a first metal layer and a second metal layer; the first metal layer has local surface plasmon characteristics for incident radio frequency S-band, C-band or X-band electromagnetic waves, and the second metal layer has local surface plasmon characteristics for incident terahertz electromagnetic waves; the first metal layer and the second metal layer are located on the same layer, or the first metal layer and the second metal layer are distributed in a superposition mode.
2. The terahertz radio-frequency signal detector based on the super-surface optical antenna as claimed in claim 1, wherein the first metal layer is composed of periodically arranged micro-elements, and the micro-elements are micro-structures;
when the micrometer elements are parallel to the doped layer, the first metal layer is of a plane structure, and at the moment, the micrometer elements are of an arc structure;
when the micrometer elements are vertical to the doped layer, the first metal layer is of a three-dimensional structure, and at the moment, the micrometer elements are of a conical structure or a prismatic table structure with an arc-shaped upper bottom surface.
3. The terahertz radio-frequency signal detector based on the super-surface optical antenna as claimed in claim 2,
when the micrometer element is in a frustum pyramid structure with an arc-shaped upper bottom surface, the number of edges is 3 or 4, the radian of the upper bottom surface is 10-180 degrees, the side length of the lower bottom surface is 10-100 micrometers, and the slant height is 1-100 micrometers;
when the micro-element is a conical structure, the diameter of the bottom surface is 10-100 μm, the height is 1-100 μm, and the angle of the cone angle is 10-60 degrees.
4. The terahertz radio-frequency signal detector based on the super-surface optical antenna as claimed in claim 1,
the second metal layer comprises a micrometer element and a plurality of metal nano-tip units; wherein the micrometer element is a micrometer structure and is polygonal in shape; the metal nano-tip units are distributed on the inner side or the outer side of each side of the micrometer element and have local surface plasmon characteristics for incident terahertz signals; the width of a single metal nano-tip unit is 20-80 nm, the height is 80-300 nm, the sharp angle is 10-60 degrees, and the distance between adjacent metal nano-tip units is 30-150 nm; or
The second metal layer comprises a plurality of three-dimensional structure units which are arranged periodically; the three-dimensional structure unit is of a vertical frustum pyramid structure, the angle of a sharp corner formed by intersecting reverse extension lines of edges is 10-90 degrees, the side length of a lower bottom surface is 200 nm-30 micrometers, the side length of an upper bottom surface is 50 nm-10 micrometers, and the height is 300 nm-5 micrometers.
5. The terahertz radio-frequency signal detector based on the super-surface optical antenna as claimed in any one of claims 1 to 4,
the substrate layer is semi-insulating gallium arsenide, silicon or aluminum oxide, and the thickness of the substrate layer is 200-500 mu m;
the doped layer is N-type gallium arsenide or P-type gallium arsenide, the thickness is 1-2 μm, and the doping concentration is 1 multiplied by 1016cm-3～9×1018cm-3；
The ohmic electrode is made of nickel, germanium and gold, and the thicknesses of the ohmic electrode are 20-80 nm, 100-300 nm and 20-80 nm respectively; the Schottky electrode is made of titanium and gold, and the thicknesses of the Schottky electrode are 20-80 nm and 100-250 nm respectively; the common electrode is made of titanium and gold, and the thicknesses of the common electrode are 20-80 nm and 100-250 nm respectively.
6. The method for preparing the terahertz radio-frequency signal detector based on the super-surface optical antenna is characterized by comprising the following steps of:
s1, injecting doping ions on the substrate layer through a metal organic compound chemical vapor deposition method to form a doping layer;
s2, preparing a silicon dioxide layer on the doped layer by a plasma enhanced chemical vapor deposition method;
s3, forming an ohmic electrode contact hole on the silicon dioxide layer through a positive photoresist process and etching treatment; forming an ohmic electrode at the contact hole of the ohmic electrode by a negative glue process and an electron beam evaporation method;
s4, forming a Schottky contact hole on the silicon dioxide layer through a positive photoresist process and etching treatment;
s5, forming a Schottky electrode and a common electrode on the silicon dioxide layer by a negative glue process and an electron beam evaporation method;
s6, preparing a super-surface optical antenna layer on the silicon dioxide layer, wherein the super-surface optical antenna layer and the doping layer form a Schottky contact through a Schottky contact hole.
7. A terahertz radio frequency signal detector based on a super-surface optical antenna is characterized by comprising: the device comprises a substrate layer, a first doping layer, a first silicon dioxide layer, a first super-surface optical antenna layer, a first ohmic electrode, a first Schottky electrode, a first common electrode, a second doping layer, a second silicon dioxide layer, a second super-surface optical antenna layer, a second ohmic electrode, a second Schottky electrode and a second common electrode;
the first doping layer is located on the substrate layer, the first silicon dioxide layer, the first super-surface optical antenna layer and the first ohmic electrode are located on the first doping layer, and the first Schottky electrode and the first common electrode are located on the first silicon dioxide layer; the first Schottky electrode and the first common electrode are both connected with the first super-surface optical antenna layer, the first super-surface optical antenna layer forms Schottky contact with the first doped layer, and the first ohmic electrode forms ohmic contact with the first doped layer;
the second doping layer is positioned below the substrate layer, the second silicon dioxide layer, the second super-surface optical antenna layer and the second ohmic electrode are positioned below the second doping layer, and the second Schottky electrode and the second common electrode are positioned below the second silicon dioxide layer; the second Schottky electrode and the second common electrode are both connected with the second super-surface optical antenna layer, the second super-surface optical antenna layer forms Schottky contact with the second doped layer, and the second ohmic electrode forms ohmic contact with the second doped layer;
the width of the first super-surface optical antenna layer is 5-100 mm, and the first super-surface optical antenna layer has local surface plasmon characteristics for incident radio frequency S-band, C-band or X-band electromagnetic waves; the width of the second super-surface optical antenna layer is 2-10 mm, and the second super-surface optical antenna layer has local surface plasmon characteristics for incident terahertz electromagnetic waves.
8. The terahertz radio-frequency signal detector based on the super-surface optical antenna as claimed in claim 7,
the first super-surface optical antenna layer is composed of periodically arranged micro-elements, and the micro-elements are of micro-structures; when the micrometer elements are parallel to the doping layer, the first super-surface optical antenna layer is of a planar structure, and at the moment, the micrometer elements are of an arc-shaped structure; when the micrometer elements are vertical to the doping layer, the first super-surface optical antenna layer is of a three-dimensional structure, and at the moment, the micrometer elements are of a conical structure or of a prismatic table structure with an arc-shaped upper bottom surface;
when the micrometer element is in a frustum pyramid structure with an arc-shaped upper bottom surface, the number of edges is 3 or 4, the radian of the upper bottom surface is 10-180 degrees, the side length of the lower bottom surface is 10-100 micrometers, and the slant height is 1-100 micrometers; when the micro-element is a conical structure, the diameter of the bottom surface is 10-100 μm, the height is 1-100 μm, and the angle of the cone angle is 10-60 degrees.
9. The terahertz radio-frequency signal detector based on the super-surface optical antenna as claimed in claim 7,
the second super-surface optical antenna layer comprises a micrometer element and a plurality of metal nano-tip units; wherein the micrometer element is a micrometer structure and is polygonal in shape; the metal nano-tip units are distributed on the inner side or the outer side of each side of the micrometer element and have local surface plasmon characteristics for incident terahertz signals; the width of a single metal nano-tip unit is 20-80 nm, the height is 80-300 nm, the sharp angle is 10-60 degrees, and the distance between adjacent metal nano-tip units is 30-150 nm; or
The second super-surface optical antenna layer comprises a plurality of periodically arranged three-dimensional structure units; the three-dimensional structure unit is of a vertical frustum pyramid structure, the angle of a sharp corner formed by intersecting reverse extension lines of edges is 10-90 degrees, the side length of a lower bottom surface is 200 nm-30 micrometers, the side length of an upper bottom surface is 50 nm-10 micrometers, and the height is 300 nm-5 micrometers.
10. The method for preparing the terahertz radio-frequency signal detector based on the super-surface optical antenna is characterized by comprising the following steps of:
s1, injecting doping ions on the substrate layer through a metal organic compound chemical vapor deposition method to form a first doping layer;
s2, preparing a first silicon dioxide layer on the first doped layer by a plasma enhanced chemical vapor deposition method;
s3, forming a first ohmic electrode contact hole on the first silicon dioxide layer through a positive photoresist process and corrosion treatment; forming a first ohmic electrode at the first ohmic electrode contact hole by a negative glue process and an electron beam evaporation method;
s4, forming a first Schottky contact hole on the first silicon dioxide layer through a positive photoresist process and etching treatment;
s5, forming a first Schottky electrode and a first common electrode on the first silicon dioxide layer by a negative photoresist process and an electron beam evaporation method;
s6, preparing a first super-surface optical antenna layer on the first silicon dioxide layer, wherein the first super-surface optical antenna layer and the first doping layer form Schottky contact through a first Schottky contact hole;
s7, forming the second doping layer, the second silicon dioxide layer, the second super surface optical antenna layer, the second ohmic electrode, the second Schottky electrode and the second common electrode below the substrate layer based on the operations of the steps S1 to S6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011155904.3A CN112216763A (en) | 2020-10-26 | 2020-10-26 | Terahertz radio frequency signal detector based on super-surface optical antenna and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011155904.3A CN112216763A (en) | 2020-10-26 | 2020-10-26 | Terahertz radio frequency signal detector based on super-surface optical antenna and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112216763A true CN112216763A (en) | 2021-01-12 |
Family
ID=74056466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011155904.3A Pending CN112216763A (en) | 2020-10-26 | 2020-10-26 | Terahertz radio frequency signal detector based on super-surface optical antenna and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112216763A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113067159A (en) * | 2021-03-23 | 2021-07-02 | 北京大学 | High-efficiency infinite channel traveling wave-surface wave antenna and implementation method thereof |
-
2020
- 2020-10-26 CN CN202011155904.3A patent/CN112216763A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113067159A (en) * | 2021-03-23 | 2021-07-02 | 北京大学 | High-efficiency infinite channel traveling wave-surface wave antenna and implementation method thereof |
| CN113067159B (en) * | 2021-03-23 | 2022-01-28 | 北京大学 | High-efficiency infinite channel traveling wave-surface wave antenna and implementation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8847824B2 (en) | Apparatuses and method for converting electromagnetic radiation to direct current | |
| Rizk et al. | Millimeter-wave Fermi tapered slot antennas on micromachined silicon substrates | |
| CN104241401B (en) | Based on Schottky type Terahertz multispectrum signal detector and the preparation method of Meta Materials | |
| WO2019194911A1 (en) | Reflection and diffraction control with slanted semiconductor metamaterials | |
| CN112216763A (en) | Terahertz radio frequency signal detector based on super-surface optical antenna and preparation method | |
| US10355368B2 (en) | Energy harvesting device composed of electrically small particles | |
| CN112216764A (en) | Ultra-wide spectrum infrared signal detector based on super-surface optical antenna and preparation method | |
| CN112216762A (en) | Terahertz signal detector based on super-surface optical antenna and preparation method thereof | |
| CN213816175U (en) | Terahertz radio frequency signal detector based on super-surface optical antenna | |
| JP2017191961A (en) | Antenna device | |
| CN104218116B (en) | Far infrared simple spectrum signal sensor based on Meta Materials and preparation method thereof | |
| CN213816174U (en) | Infrared terahertz signal detector based on super-surface optical antenna | |
| CN110311000A (en) | Two class superlattices avalanche photodetectors and preparation method thereof | |
| CN213878118U (en) | Terahertz signal detector based on super-surface optical antenna | |
| CN112216761A (en) | Infrared terahertz signal detector based on super-surface optical antenna and preparation method | |
| CN110534909B (en) | Terahertz metamaterial converter with switchable ring couples and galvanic couples based on MEMS planar structure reconstruction and preparation method thereof | |
| CN104201233A (en) | Metamaterial based Schottky type millimeter wave multi-spectrum signal detector and preparation method | |
| CN213242575U (en) | Radio frequency signal detector based on super surface optical antenna | |
| CN213425003U (en) | Infrared radio frequency signal detector based on super surface optical antenna | |
| CN112216765A (en) | Radio frequency signal detector based on super-surface optical antenna and preparation method thereof | |
| CN115188855A (en) | Photoelectric detector, integrated photoelectric detector and manufacturing method thereof | |
| CN112259633A (en) | Infrared radio frequency signal detector based on super-surface optical antenna and preparation method thereof | |
| CN110095141A (en) | Radar type spinning microwave detector and its preparation method and application based on magnetic tunnel junction | |
| WO2019143295A1 (en) | Nanoantenna | |
| CN213242574U (en) | Ultra-wide spectrum infrared signal detector based on super-surface optical antenna |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |