CN112216708A - Method for forming image sensor - Google Patents
Method for forming image sensor Download PDFInfo
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- CN112216708A CN112216708A CN201910629736.8A CN201910629736A CN112216708A CN 112216708 A CN112216708 A CN 112216708A CN 201910629736 A CN201910629736 A CN 201910629736A CN 112216708 A CN112216708 A CN 112216708A
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 91
- 239000011147 inorganic material Substances 0.000 claims abstract description 91
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention provides a method for forming an image sensor chip, which is characterized in that a device structure of the image sensor chip is formed in a wafer factory; directly forming a micro-lens structure by adopting inorganic materials in a wafer factory; and finishing the packaging of the image sensor chip.
Description
Technical Field
The invention relates to a method for forming an image sensor.
Background
Existing image sensors may include, among other things, a microlens, a planarizing layer, a color filter array, and a photodiode. Wherein the photodiode can perform a function of converting light into an electrical signal; the color filter array may separate incident light into three primary colors (e.g., red, green, and blue) to transmit them to the photodiodes, which may be omitted for a black-and-white image sensor; the microlens may perform the function of condensing light into the photodiode. The manufacturing process of the image sensor is mainly divided into the following parts:
completing a silicon-based process of the wafer, wherein the silicon-based process is performed in a wafer foundry;
completing the color filter and microlens process of the wafer in a special factory, wherein the material of the microlens is organic material;
completing the packaging process;
in addition, the manufacturing methods of the microlens of the image sensor in the prior art are of two types, the first type is made of organic materials, the manufacturing process of the microlens needs to be carried out to a special factory after the wafer is processed by a factory, the size of the microlens is equal to the unit size of one sensor, and the manufacturing cost of the method is high. The second type is that a light-gathering structure is completed in a silicon factory, the material of the light-gathering structure is inorganic material, and the size of the light-gathering structure is smaller than the unit size of a sensor; and after the silicon-based process is completely finished, sending the silicon-based process to a special factory for manufacturing the micro-lens. The light-focusing structure can help the micro-lens to perform secondary light focusing, but cannot replace the micro-lens.
The existing microlens manufacturing method has complex process steps, needs to be transferred to a special factory for processing and manufacturing after the device structure is finished in a wafer factory, and is difficult to control on manufacturing cost, manufacturing complexity and difficulty and cleanliness maintenance in the transportation process.
Disclosure of Invention
The invention provides a method for forming an image sensor chip,
forming a device structure of an image sensor chip in a wafer factory;
directly forming a micro-lens structure by adopting inorganic materials in a wafer factory;
and finishing the packaging of the image sensor chip.
Preferably, the forming method comprises the steps of:
s100: sequentially forming a first inorganic material layer and a light resistance layer on a semiconductor substrate in a wafer factory;
s200: etching the first inorganic material layer and the light resistance layer;
s300: removing the photoresist layer;
s400: forming a second inorganic material layer on the first inorganic material layer to form a micro lens;
preferably, in the step S200, an etching manner of controlling an angle is adopted to form the first inorganic material layer such that the bottom portion is wider than the upper portion.
Preferably, the method is characterized in that,
s100': sequentially forming a first inorganic material layer and a light resistance layer on a semiconductor substrate in a wafer factory;
s200': etching the first inorganic material layer and the light resistance layer, and forming the bottom parts of the spaced first inorganic material layers to be wider than the upper parts by adopting an angle-controlled etching mode;
s300': removing the photoresist layer;
s310': forming a smaller first inorganic material layer structure by isotropically etching the spaced first inorganic material layers;
s400': and forming a second inorganic material layer on the smaller first inorganic material layer structure to form the micro lens.
Preferably, S100': sequentially forming a first inorganic material layer and a light resistance layer on a semiconductor substrate in a wafer factory;
s200': etching the first inorganic material layer and the light resistance layer, and controlling the shape and the size of the light resistance layer to be smaller than the first inorganic material layer at intervals;
s210', etching the first inorganic material layer with interval to form a first inorganic material layer with step shape;
s400': and forming a second inorganic material layer on the etched photoresist layer and the step-shaped first inorganic material layer to form the micro lens.
Preferably, in the step of forming the second inorganic material layer, a thickness: and etching the second inorganic material layer of less than or equal to half of the image sensor units to form the micro lens.
Preferably, in the step of forming the second inorganic material layer, the growing and etching of the second inorganic material layer may be performed multiple times to form the microlens.
Preferably, the micro-lens is polygonal, circular or elliptical.
Preferably, the first inorganic material layer and the second inorganic material layer are silicon oxide, silicon nitride, and silicon oxynitride.
The invention is to be applied to a novel manufacturing method of a micro-lens, which is mainly applied to a CMOS image sensor, and the method can be integrated in the existing silicon integrated circuit process, thereby omitting the steps of a color filter and a micro-lens process in a special factory after a wafer is manufactured.
The method has the advantages that the manufacturing of the micro-lens can be completed in a silicon-based process, the size can be equal to the unit size of one sensor, the micro-lens manufacturing process in a special factory is completely replaced, and the cost is saved; in addition, the micro lens in the method is made of inorganic materials, the shape, the height and the size of the micro lens can be obtained by corresponding process adjustment, and different light gathering effects can be realized.
Drawings
Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments thereof, which proceeds with reference to the accompanying drawings.
Fig. 1 to 4 are process steps of a method for forming an image sensor chip according to a first embodiment of the present invention;
FIGS. 5 to 8 are process steps of a second embodiment of a method for forming an image sensor chip according to the present invention;
FIGS. 9 to 14 are process steps of a method for forming an image sensor chip according to a third embodiment of the present invention;
FIGS. 15-20 are process steps of a fourth embodiment of a method for forming an image sensor chip according to the present invention;
FIG. 21 is a schematic diagram of a microlens in an embodiment of an image sensor chip according to the invention;
FIG. 22 is a schematic view of a microlens in another embodiment of an image sensor chip according to the present invention;
fig. 23-26 are top views of microlenses in several embodiments of image sensor chips according to the present invention.
FIG. 27 is a flow chart of a method for forming an image sensor chip according to the present invention.
In the drawings, like or similar reference numbers indicate like or similar devices (modules) or steps throughout the different views.
Detailed Description
In order to solve the above problems in the prior art, the present invention provides a method for forming an image sensor chip, which forms a device structure of the image sensor chip in a wafer factory;
directly forming a micro-lens structure by adopting inorganic materials in a wafer factory; and finishing the packaging of the image sensor chip.
Please refer to fig. 1 to 4, wherein fig. 1 to 4 are process step diagrams of a method for forming an image sensor chip according to a first embodiment of the present invention; in fig. 1, a semiconductor substrate 1 is provided at a foundry (foundry). In fig. 2, a first inorganic material layer 2 and a photoresist layer 3 are sequentially formed on a semiconductor substrate 1 in a wafer fab; in fig. 3, the first inorganic material layer 2 and the photoresist layer 3 are etched until reaching the surface of the semiconductor substrate 1; in fig. 4, a second inorganic material layer 2' is further formed on the first inorganic material layer 2, thereby forming a microlens. The formation process of the image sensor micro-lens is completed in a wafer factory without being realized in a specific factory, and the material of the micro-lens is formed by adopting an inorganic material.
With continued reference to fig. 5 to 8, fig. 5 to 8 are process step diagrams of a method for forming an image sensor chip according to a second embodiment of the present invention; in fig. 5, a semiconductor substrate 1 is provided in a foundry (foundry), and the material of the semiconductor substrate 1 may be: silicon, germanium, gallium arsenide. In fig. 6, a first inorganic material layer 2 and a photoresist layer 3 are sequentially formed on a semiconductor substrate 1 in a wafer fab; in fig. 7, the first inorganic material layer 2 and the photoresist layer 3 are etched until the etching stops at the surface of the semiconductor substrate 1, and the bottom of the first inorganic material layer 2 is wider than the upper part thereof by using an angle-controlled etching method; in fig. 8, a second inorganic material layer 2' is further formed on the first inorganic material layer 2, thereby forming a microlens. The formation process of the image sensor micro-lens is completed in a wafer factory without being realized in a specific factory, and the material of the micro-lens is formed by adopting an inorganic material.
With continued reference to fig. 9 to 14, fig. 9 to 14 are process steps of a method for forming an image sensor chip according to a third embodiment of the present invention; in fig. 9, a semiconductor substrate 1 is provided at a foundry (foundry). In fig. 10, a first inorganic material layer 2 and a photoresist layer 3 are sequentially formed on a semiconductor substrate 1 in a wafer fab; in fig. 11, the first inorganic material layer 2 and the photoresist layer 3 are etched until they stop on the surface of the semiconductor substrate 1, and in the step of fig. 12, the shape and size of the photoresist layer 3 are controlled to be smaller than the first inorganic material layer 2 at intervals; fig. 13 is a view of the spaced first inorganic material layer 2 etched to form a stepped first inorganic material layer 2; in fig. 14, a second inorganic material layer 2' is formed on the etched photoresist layer 3 and the step-shaped first inorganic material layer 2 to form a microlens. The formation process of the image sensor micro-lens is completed in a wafer factory without being realized in a specific factory, and the material of the micro-lens is formed by adopting an inorganic material.
With reference to fig. 15 to 20, fig. 15 to 20 are process steps of a fourth embodiment of a method for forming an image sensor chip according to the present invention; in fig. 15, a semiconductor substrate 1 is provided at a foundry (foundry). In fig. 16, a first inorganic material layer 2 and a photoresist layer 3 are sequentially formed on a semiconductor substrate 1 in a wafer fab; fig. 17, the first inorganic material layer 2 and the photoresist layer 3 are etched until they stop on the surface of the semiconductor substrate 1, and the bottom of the first inorganic material layer 2 is wider than the top thereof at intervals by using an angle-controlled etching method; FIG. 18 is a schematic view showing the removal of the photoresist layer; fig. 19 uses isotropic etching of the spaced first inorganic material layer 2 to form a smaller first inorganic material layer structure 2'; in fig. 20, a second inorganic material layer 2' is formed on the smaller first inorganic material layer structure 2 ″, forming a microlens. The formation process of the image sensor micro-lens is completed in a wafer factory without being realized in a specific factory, and the material of the micro-lens is formed by adopting an inorganic material.
Please refer to fig. 21 and fig. 22, wherein: FIG. 21 is a schematic diagram of a microlens in an embodiment of an image sensor chip according to the invention; FIG. 22 is a schematic view of a microlens in another embodiment of an image sensor chip according to the present invention;
fig. 22 may be compared with fig. 21 to increase the growth thickness of the last second inorganic material layer 2 ', in this embodiment, the second inorganic material layer 2 ' with a thickness equal to or less than half of the image sensor unit may be grown first, and then the second inorganic material layer is etched to form the microlens, and then the material 2 ' is etched, so as to form a better microlens shape. In another embodiment, in the step of forming the second inorganic material layer, the growing and etching of the second inorganic material layer may be performed a plurality of times.
With continuing reference to fig. 23-26, fig. 23-26 are top views of microlenses in several embodiments of an image sensor chip of the invention. The shape of the microlens may be polygonal, circular (not shown), elliptical (not shown).
FIG. 27 is a flow chart of a method for forming an image sensor chip according to the present invention. Forming a device structure of an image sensor chip in a wafer factory; directly forming a micro-lens structure by adopting inorganic materials in a wafer factory; and finishing the packaging of the image sensor chip.
The wafer factory referred in the invention is a wafer foundry, including an enterprise providing related services in the industry, and comprises: taiwan integrated circuit, central core international, three-star semiconductor, power-on, mechano-crystal technology, etc.; the inorganic material includes: silicon nitride, silicon oxide, silicon oxynitride or a combination of any of the above; the semiconductor substrate may be made of: silicon, germanium, gallium arsenide.
In summary, the present invention is applied to a novel method for manufacturing a microlens, which is mainly applied to a CMOS image sensor, and the method can be integrated into the existing silicon integrated circuit process, thereby omitting the steps of the color filter and microlens processes in a special factory after the wafer is manufactured.
The method has the advantages that the manufacturing of the micro-lens can be completed in a silicon-based process, the size can be equal to the unit size of one sensor, the micro-lens manufacturing process in a special factory is completely replaced, and the cost is saved; in addition, the micro lens in the method is made of inorganic materials, the shape, the height and the size of the micro lens can be obtained by corresponding process adjustment, and different light gathering effects can be realized.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive. Furthermore, it will be obvious that the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. Several elements recited in the apparatus claims may also be implemented by one element. The terms first, second, etc. are used to denote names, but not any particular order.
Claims (9)
1. A method of forming an image sensor chip,
forming a device structure of an image sensor chip in a wafer factory;
directly forming a micro-lens structure by adopting inorganic materials in a wafer factory;
and finishing the packaging of the image sensor chip.
2. The method of forming an image sensor chip according to claim 1,
s100: sequentially forming a first inorganic material layer and a light resistance layer on a semiconductor substrate in a wafer factory;
s200: etching the first inorganic material layer and the light resistance layer;
s300: removing the photoresist layer;
s400: and forming a second inorganic material layer on the first inorganic material layer to form the micro-lens.
3. The method of forming an image sensor chip according to claim 2,
in the step S200, an etching manner of controlling an angle is adopted to form the first inorganic material layer with the bottom wider than the upper portion.
4. The method of forming an image sensor chip according to claim 1,
s100': sequentially forming a first inorganic material layer and a light resistance layer on a semiconductor substrate in a wafer factory;
s200': etching the first inorganic material layer and the light resistance layer, and forming the bottom parts of the spaced first inorganic material layers to be wider than the upper parts by adopting an angle-controlled etching mode;
s300': removing the photoresist layer;
s310', forming a smaller first inorganic material layer structure by isotropically etching the spaced first inorganic material layers;
s400': and forming a second inorganic material layer on the smaller first inorganic material layer structure to form the micro lens.
5. The method of forming an image sensor chip according to claim 1,
s100': sequentially forming a first inorganic material layer and a light resistance layer on a semiconductor substrate in a wafer factory;
s200': etching the first inorganic material layer and the light resistance layer, and controlling the shape and the size of the light resistance layer to be smaller than the first inorganic material layer at intervals;
s210', etching the first inorganic material layer with interval to form a first inorganic material layer with step shape;
s400': and forming a second inorganic material layer on the etched photoresist layer and the step-shaped first inorganic material layer to form the micro lens.
6. The method as claimed in any one of claims 2 to 5, wherein in the step of forming the second inorganic material layer, the second inorganic material layer with a thickness of less than or equal to half of the image sensor unit is grown, and then the second inorganic material layer is etched to form the micro lens.
7. The method of claim 6, wherein the step of forming the second inorganic material layer comprises growing and etching the second inorganic material layer multiple times to form the micro-lenses.
8. The method of claim 1, wherein the microlens is polygonal, circular, or elliptical.
9. The method of claim 1, wherein the first and second inorganic material layers are silicon oxide, silicon nitride, or silicon oxynitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910629736.8A CN112216708A (en) | 2019-07-12 | 2019-07-12 | Method for forming image sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910629736.8A CN112216708A (en) | 2019-07-12 | 2019-07-12 | Method for forming image sensor |
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| CN112216708A true CN112216708A (en) | 2021-01-12 |
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Citations (5)
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| CN1992211A (en) * | 2005-12-28 | 2007-07-04 | 东部电子股份有限公司 | CMOS image sensor and method for manufacturing the same |
| CN101299420A (en) * | 2007-05-03 | 2008-11-05 | 东部高科股份有限公司 | Method for manufacturing image sensor |
| CN101393886A (en) * | 2007-09-21 | 2009-03-25 | 和舰科技(苏州)有限公司 | Manufacturing method for micro-lens of image sensor |
| CN102446937A (en) * | 2010-10-07 | 2012-05-09 | 索尼公司 | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
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- 2019-07-12 CN CN201910629736.8A patent/CN112216708A/en active Pending
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| KR20050072350A (en) * | 2004-01-06 | 2005-07-11 | 매그나칩 반도체 유한회사 | Method for manufacturing inorganic microlens |
| CN1992211A (en) * | 2005-12-28 | 2007-07-04 | 东部电子股份有限公司 | CMOS image sensor and method for manufacturing the same |
| CN101299420A (en) * | 2007-05-03 | 2008-11-05 | 东部高科股份有限公司 | Method for manufacturing image sensor |
| CN101393886A (en) * | 2007-09-21 | 2009-03-25 | 和舰科技(苏州)有限公司 | Manufacturing method for micro-lens of image sensor |
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Inventor after: Zhang Haoran Inventor after: Li Jie Inventor after: Fu Wen Inventor before: Li Jie Inventor before: Fu Wen Inventor before: Zhang Haoran |
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Correction item: Inventor Correct: Li Jie|Pay the document|Zhang Haoran False: Zhang Haoran|Li Jie|Pay the document Number: 15-01 Volume: 37 |