CN112202050A - Small VCSEL laser with controllable laser power - Google Patents
Small VCSEL laser with controllable laser power Download PDFInfo
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- CN112202050A CN112202050A CN202011074105.3A CN202011074105A CN112202050A CN 112202050 A CN112202050 A CN 112202050A CN 202011074105 A CN202011074105 A CN 202011074105A CN 112202050 A CN112202050 A CN 112202050A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- Semiconductor Lasers (AREA)
Abstract
The invention provides a miniaturized VCSEL laser with controllable laser power, which comprises: a VCSEL device (6) directly bare on the tube or combined with a transition support (15) to form a VCSEL assembly; the photoelectric detector chip (8) and the control circuit chip (7) form an integrated chip (12), and the integrated chip (12) is used for detecting light emitted by the VCSEL device (6) and regulating and controlling the output of the light of the VCSEL device (6); the VCSEL component and the integrated chip are mixed, integrated and assembled on the heat sink (14), and the tube cap (11) and the heat sink form a packaging structure to form an integrated device. The laser provided by the invention has the advantages of small volume, simple and convenient preparation process, convenience for assembly into various modules and device equipment, and capability of realizing large-area array integration with consistent laser power.
Description
Technical Field
The invention relates to the technical field of optoelectronic devices, in particular to a miniaturized VCSEL laser with controllable laser power.
Background
With the continuous improvement of the manufacturing technology of the semiconductor laser and the reduction of the production cost, the requirements of the application market on the miniaturization and easy integration of the semiconductor laser are higher and higher. New requirements are continuously put forward on the development of miniaturized semiconductor lasers which are convenient to be assembled into other equipment. The traditional laser components are all external control circuits, and the whole components are large in size and not beneficial to system integration. When the laser is used in a large area, a group of control circuits are used by a plurality of lasers, and the problems that the power of a single laser is unstable and the power of lasers among a plurality of lasers is not uniform exist.
Disclosure of Invention
Technical problem to be solved
Aiming at the problems, the invention provides a miniature VCSEL laser with controllable laser power, which is used for at least partially solving the technical problems that the traditional laser component is large in size, not beneficial to system integration, unstable in single laser power, uneven in laser power among multiple lasers and the like.
(II) technical scheme
One aspect of the present invention provides a miniaturized VCSEL laser with controllable laser power, comprising: a VCSEL device directly bare on the tube or combined with a transition support to form a VCSEL assembly; the photoelectric detector chip and the control circuit chip form an integrated chip which is used for detecting light transmitted from the back of the VCSEL device and regulating and controlling the output of the VCSEL device light; the VCSEL component and the integrated chip are mixed, integrated and assembled on the heat sink, and the tube cap and the heat sink form a packaging structure to form an integrated device.
Furthermore, the VCSEL device can emit light with a wavelength from ultraviolet to infrared, can be a coplanar electrode or a coplanar electrode, and can be a device with a substrate and with a light transmission device on the back or a device without a substrate and with a light transmission device on the back.
Further, the material of the transition support comprises diamond, sapphire, AlN and transparent glass.
Another aspect of the present invention provides a miniaturized VCSEL laser with controllable laser power, comprising: the VCSEL device and the photoelectric detector chip form a monolithic integrated chip, the photoelectric detector chip directly receives light emitted by the VCSEL device, and the control circuit chip regulates and controls the output of the VCSEL device light according to detection data in the monolithic integrated chip; the monolithic integrated chip and the control circuit chip are mixed and integrated on the tube seat, and the tube cap and the tube seat form a packaging structure to form an integrated device.
Furthermore, the VCSEL device can emit light with a wavelength from ultraviolet to infrared, can be a coplanar electrode or a coplanar electrode, and can be a device with a substrate and with a light transmission device on the back or a device without a substrate and with a light transmission device on the back.
In yet another aspect, the present invention provides a miniaturized VCSEL laser with controllable laser power, comprising: the VCSEL device, the control circuit chip and the photoelectric detector chip are respectively assembled on the tube seat, and a tube cap or a tube shell forms a packaging structure with the tube cap or the tube shell to form an integrated device; the light emitted from the front surface of the VCSEL device is received by the photoelectric detector chip after being reflected or scattered in a directional mode through the pipe cap or the pipe shell, and the control circuit chip regulates and controls the output of the VCSEL device light according to detection data of the detector chip.
Furthermore, the VCSEL device is bonded on the transition heat sink and then integrally assembled on the tube seat.
Furthermore, the VCSEL device, the control circuit chip, the photoelectric detector chip and the pattern substrate board are assembled on the tube seat after being mixed and integrated.
Further, the control circuit chip and the photoelectric detector chip are monolithically integrated to form an integrated chip.
Further, the tube shell material comprises a hard material and a soft material, and the inner wall processing mode comprises surface roughening design and inner wall pattern design; the tube cap and the tube shell comprise an angle design and a radian design, and the light outlet hole of the tube cap and the tube shell is made of coated glass, coated lenses and optical shaping elements.
(III) advantageous effects
According to the small VCSEL laser with controllable laser power, the advantages that the VCSEL is small and convenient to install and the characteristics that a photoelectric detector chip and a control circuit chip can be integrated in a single chip mode or in a mixed mode are utilized, the structure that the VCSEL and the integrated chip are assembled and integrated into a whole is designed, and the small VCSEL structure with self-adjusting capability and stable output laser power is achieved.
Drawings
Fig. 1 schematically shows a first structural schematic of a miniaturized VCSEL laser with controllable laser power according to an embodiment of the present invention;
FIG. 2 schematically illustrates a second structural schematic of a miniaturized VCSEL laser with controllable laser power according to an embodiment of the present invention;
FIG. 3 schematically shows a third structural schematic of a miniaturized VCSEL laser with controllable laser power according to an embodiment of the invention;
FIG. 4 schematically illustrates a fourth structural schematic of a miniaturized VCSEL laser with controllable laser power according to an embodiment of the present invention;
FIG. 5 schematically illustrates a fifth structural schematic of a miniaturized VCSEL laser with controllable laser power according to an embodiment of the present invention;
FIG. 6 schematically illustrates a flow chart of a method for fabricating a miniaturized VCSEL laser with controllable laser power according to an embodiment of the present invention;
description of the reference numerals
1-tube seat;
2-a pipe shell;
3-a pin;
4-a window;
5-transition heat sink;
6-VCSEL devices;
7-control circuit chip;
8-a photodetector chip;
9-VCSEL and PD longitudinal integrated device;
10-a graphics substrate board;
11-a pipe cap;
12-an integrated device chip;
13-a patterned electrode;
14-a heat sink;
15-transition support.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
A first embodiment of the present invention provides a miniaturized VCSEL laser with controllable laser power, please refer to fig. 1 and fig. 2, which includes: the VCSEL device 6, either directly bare on the tube, or in combination with a transition support 15, forms a VCSEL assembly; the photoelectric detector chip 8 and the control circuit chip 7 form an integrated chip 12 for detecting light transmitted from the back of the VCSEL device 6 and regulating and controlling the light output of the VCSEL device 6; the VCSEL component and the monitoring control component are mixed, integrated and assembled on the heat sink 14, and the tube cap 11 and the heat sink form a packaging structure to form an integrated device.
The VCSEL miniaturization structure with controllable laser power has the advantages that a VCSEL component and an integrated chip are designed into an integrated structure, and a photoelectric detector chip 8 and a circuit control chip 7 are integrated into a whole by an integrated chip 12 in a semiconductor and microelectronic process mode; the VCSEL device assembly is either bare directly or mounted on a transition support 15, with integrated features achieved by electrode interconnection and current input through patterned electrodes 13, in a hybrid integration manner. The invention utilizes the advantages of the integrated preparation process of the semiconductor and the micro-electronics to carry out integrated process design on the detection part and the circuit control part of the VCSEL. The automatic power control circuit is prepared by a CMOS compatible process to replace an external PCB for control, the design of millimeter-scale volume size of the power detection and automatic power control circuit is realized, and the characteristic of miniaturization is realized.
The laser power change of the VCSEL device 6 is monitored through the photoelectric detector chip 8, the power control circuit is automatically adjusted, and the controllable characteristic of the laser power of the VCSEL is achieved.
On the basis of the above embodiments, the VCSEL device 6 may have a lasing wavelength from ultraviolet to infrared, may be a coplanar electrode or a coplanar electrode, and may be a substrate-equipped backside light transmission device or a substrate-free backside light transmission device.
The VCSEL device can be a device with different lasing wavelengths and is wide in application range. The VCSEL device has the characteristics of high-frequency modulation speed when being an coplanar electrode and simple installation and preparation process when being a non-coplanar electrode. In this embodiment, the VCSEL device may be a back-side light-transmissive device, the back-side transmitted light is directly incident on the photodetector chip 8, and the VCSEL device may be a substrate-mounted or substrate-less device. The light of the VCSEL device 6 directly enters the photoelectric detector chip 8, the control circuit chip 7 adjusts the light output of the VCSEL device 6 according to the parameter change of the photoelectric detector chip 8, the power can be stably or adjustably output through the monitoring and modulation of the detector and the control circuit, and the influence of the use time, the use scene and the like is avoided.
On the basis of the above embodiment, the material of the transition support 15 includes diamond, sapphire, AlN, transparent glass.
The transition support 15 acts as a back-emitting VCSEL, by which the underlying photodetector chip 8 receives back-transmitted light; without the transition support 15, the light is incident in a manner that realizes directional reflection or diffuse scattering of the light by special design of the tube cap or the window.
A second embodiment of the present invention provides a miniaturized VCSEL laser with controllable laser power, as shown in fig. 3, including: the VCSEL device 6 and the photoelectric detector chip 8 form a monolithic integrated chip 9, the photoelectric detector chip 8 directly receives light emitted by the VCSEL device 6, and the control circuit chip 7 regulates and controls the output of the VCSEL device 6 according to detection data in the monolithic integrated chip 9; the monolithic integrated chip 9 and the control circuit chip 7 are mixed and integrated on the tube seat 1, and the tube cap 11 and the tube seat form a packaging structure to form an integrated device.
The VCSEL device 6 and the photoelectric detector chip 8 are longitudinally integrated through material and device preparation, namely, a single integrated device chip 9 is formed, the single integrated device chip 9 is made of semiconductor materials, and a detector chip part in the single integrated device chip 9 directly receives light emitted by the VCSEL chip part. The control circuit chip 7 receives the change of the photocurrent through the photoelectric detector chip 8, regulates and controls the VCSEL device 6, and realizes the controllable laser power output of the VCSEL. The VCSEL device 6, the photoelectric detector chip 8 and the control circuit chip 7 are interconnected through leads, and current injection is finally carried out through the pin 3.
On the basis of the above embodiments, the VCSEL device 6 may have a lasing wavelength from ultraviolet to infrared, may be a coplanar electrode or a coplanar electrode, and may be a substrate-equipped backside light transmission device or a substrate-free backside light transmission device.
The VCSEL device can be a device with different lasing wavelengths and is wide in application range. The VCSEL device has the characteristics of high-frequency modulation speed when being an coplanar electrode and simple installation and preparation process when being a non-coplanar electrode. In this embodiment, the VCSEL device is a back-side light-transmitting device, the back-side transmitted light is directly incident on the photodetector chip 8, and the VCSEL device may be a device with or without a substrate. The light of the VCSEL device 6 directly enters the photoelectric detector chip 8, the control circuit chip 7 adjusts the light output of the VCSEL device 6 according to the parameter change of the photoelectric detector chip 8, the power can be stably or adjustably output through the monitoring and modulation of the detector and the control circuit, and the influence of the use time, the use scene and the like is avoided.
A third embodiment of the present invention provides a miniaturized VCSEL laser with controllable laser power, please refer to fig. 4 and 5, which includes: the VCSEL device 6, the control circuit chip 7 and the photoelectric detector chip 8 are respectively assembled on the tube seat 1, and the tube cap 11 or the tube shell 2 forms a packaging structure with the tube seat to form an integrated device; the light emitted from the front surface of the VCSEL device 6 is received by the photodetector 8 after being directionally reflected or diffusely scattered by the cap 11 or the case 2, and the control circuit chip 7 regulates and controls the output of the VCSEL device 6 according to the detection data of the detector chip 8.
The VCSEL device 6, the control circuit chip 7 and the photoelectric detector chip 8 are assembled on the tube seat 1, the tube shell 2 can be subjected to surface roughening design or inner wall pattern design to prevent scattering and the like, and the angled or radian window 4 or the optical element 11 is adopted and interconnected through a lead, and finally current injection is carried out through the pin 3. The light of the VCSEL device 6 is transmitted to the photoelectric detector chip 8 through the special design of the light-emitting window, the reflected light is transmitted to the photoelectric detector chip 8, and the light output of the VCSEL device 6 is adjusted through the parameter change of the photoelectric detector chip 8 and the control circuit chip 7. The cap 11 is in an angular or curved coating shape. And the detector can receive ultraviolet rays to infrared rays. The control circuit chip 7 may include an input channel, a negative feedback control loop, and a reference channel, or include a temperature control section. The photoelectric detector chip 8 and the control circuit chip 7 are both prepared by semiconductor and microelectronic processes, and can realize hybrid integration or monolithic integration of the two according to the preparation process design.
On the basis of the above embodiment, the VCSEL device 6 is bonded to the submount 5 and then integrally assembled on the stem 1.
Referring to fig. 4, the transition heat sink 5 shelves the VCSEL device to reduce the package size, and the VCSEL device can only emit light from the front side. For back-emitting VCSELs, the transition support 15 is used to allow the underlying detectors to receive the back-light. In this embodiment, a standard tube case packaged by a laser TO is adopted, and an inclined window is designed TO reflect front emergent light so as TO facilitate absorption of light of the photoelectric detector chip 8. The material of the submount 5 includes copper, diamond, sapphire, A1N, transparent glass, TEC. Materials used for bonding the VCSEL device 6 and the transition heat sink 5 comprise photoresist, ultraviolet glue, benzocyclobutene thin film, indium, gold-tin alloy, indium-tin alloy and silver paste.
On the basis of the above embodiment, the VCSEL device 6, the control circuit chip 7, the photodetector chip 8, and the pattern substrate 10 are mixed and integrated and then assembled on the stem 1.
Referring to fig. 5, the substrate board 10 is integrated with the monitoring component and VCSEL component, and the integrated component is assembled on the heat sink 14 or the socket 1; the integrated chip and the VCSEL component are connected with each other through a lead wire to realize electrode interconnection; the assembled assembly is closed off by the pipe cap 11. The controllable VCSEL miniaturized structure of laser power that this embodiment provided assembles integration in an organic whole with VCSEL, detector, power regulating circuit, realizes possessing the stable miniaturized VCSEL structure of output laser power of self regulating ability, is convenient for assemble to various modules and device and equips, also can realize that laser power is unanimous gets large tracts of land array integration.
The invention realizes stable power output and adjustable power output by combining the back light-emitting design of the VCSEL and the use of the transparent transitional heat sink or the special design of the packaging shell and the self-adjustment of the internal monitoring and control circuit. The miniaturized integrated structure is realized through reasonable layout, compact structure and integrated design of a control circuit. At the exit aperture of the envelope, an optical element may be placed for optimizing beam quality.
The following describes a method for manufacturing a VCSEL miniaturized structure with controllable laser power according to an embodiment, please refer to fig. 6, which includes:
preparing a VCSEL device 6 or preparing a VCSEL and PD longitudinal integrated device chip 9;
preparing a mixed integrated or monolithic integrated device chip 12 of the detector chip 8 and the control circuit chip 7 to form a monitoring control component;
the VCSEL device 6 is mounted on the transition heat sink 5 or the transition support 15 or directly bare to form a VCSEL component;
the mixed integration of the monitoring component and the VCSEL component, or the mixed integration of the single integrated chip 12 of the monitoring component and the VCSEL component, or the mixed integration of the VCSEL and the PD longitudinal integrated device chip 9 and the control circuit chip 7 is carried out on the pattern substrate 10;
the hybrid integrated assembly is assembled on the heat sink 14 or the tube base 1;
the monitoring control assembly and the VCSEL assembly are connected through leads to achieve electrode interconnection;
the assembled assembly is closed off by the pipe cap 11.
The invention designs an integrated and miniaturized VCSEL with controllable laser power from the structural point of view, overcomes the defect of large volume of the external design of the circuit controller of the VCSEL in China at present, and solves the problem of instability of laser output power of a VCSEL device caused by factors such as working time, environmental temperature and the like.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A miniaturized VCSEL laser with controllable laser power, comprising:
a VCSEL device (6) directly bare on the tube or combined with a transition support (15) to form a VCSEL assembly;
the photoelectric detector chip (8) and the control circuit chip (7) form an integrated chip (12) which is used for detecting the light transmitted from the back of the VCSEL device (6) and regulating and controlling the light output of the VCSEL device (6);
the VCSEL component and the integrated chip are mixed, integrated and assembled on the heat sink (14), and the tube cap (11) and the heat sink form a packaging structure to form an integrated device.
2. The miniaturized VCSEL laser with controllable laser power according to claim 1, wherein the VCSEL device (6) can lase at a wavelength from uv to ir, can be a coplanar electrode or a coplanar electrode, can be a substrate-backed or a substrate-less backside-illuminated device.
3. The miniaturized VCSEL laser with controllable laser power according to claim 1, wherein the material of the transition support (15) comprises diamond, sapphire, A1N, transparent glass.
4. A miniaturized VCSEL laser with controllable laser power, comprising:
the VCSEL device (6) and the photoelectric detector chip (8) form a single integrated chip (9), the photoelectric detector chip (8) directly receives light emitted by the VCSEL device (6), and the control circuit chip (7) regulates and controls the light output of the VCSEL device (6) according to detection data in the single integrated chip (9);
the monolithic integrated chip (9) and the control circuit chip (7) are mixed, integrated and assembled on the tube seat (1), and the tube cap (11) and the tube seat form a packaging structure to form an integrated device.
5. The miniaturized VCSEL laser with controllable laser power according to claim 4, wherein the VCSEL device (6) can lase at a wavelength from uv to ir, can be a coplanar electrode or a coplanar electrode, can be a substrate-backed light-transmissive device or a substrate-free back-backed light-transmissive device.
6. A miniaturized VCSEL laser with controllable laser power, comprising:
the VCSEL device (6), the control circuit chip (7) and the photoelectric detector chip (8) are respectively assembled on the tube seat (1), and a tube cap (11) or a tube shell (2) forms a packaging structure with the tube seat to form an integrated device;
the light emitted by the front surface of the VCSEL device (6) is received by a photoelectric detector chip (8) after being directionally reflected or diffusely scattered by the tube cap (11) or the tube shell (2), and the control circuit chip (7) regulates and controls the light output of the VCSEL device (6) according to the detection data of the detector chip (8).
7. The miniaturized VCSEL laser with controllable laser power of claim 6, wherein the VCSEL device (6) is bonded on the submount (5) and then integrally assembled on the stem (1).
8. The VCSEL laser with controllable laser power of claim 6, wherein the VCSEL device (6), the control circuit chip (7), the photodetector chip (8) and the pattern substrate board (10) are mixed and integrated and then assembled on the stem (1).
9. The laser power controllable miniaturized VCSEL laser according to claim 6, wherein the control circuit chip (7) and the photodetector chip (8) are monolithically integrated to form an integrated chip (12).
10. The miniaturized VCSEL laser with controllable laser power according to claim 6, wherein the material of the package (2) comprises a hard material and a soft material, and the inner wall processing manner comprises surface roughening design and inner wall pattern design; the tube cap (11) and the tube shell (2) comprise an angle design and an arc design, and the light outlet hole of the tube cap and the tube shell comprises coated glass, a coated lens and an optical shaping element.
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| CN202011074105.3A CN112202050A (en) | 2020-10-09 | 2020-10-09 | Small VCSEL laser with controllable laser power |
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| CN202011074105.3A CN112202050A (en) | 2020-10-09 | 2020-10-09 | Small VCSEL laser with controllable laser power |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050105572A1 (en) * | 2003-11-14 | 2005-05-19 | Szutsun Simoun-Ou | Laser diode device |
| CN201303205Y (en) * | 2008-10-22 | 2009-09-02 | 华信光电科技股份有限公司 | Laser diode device |
| CN102017338A (en) * | 2008-05-09 | 2011-04-13 | 皇家飞利浦电子股份有限公司 | Vertical cavity surface emitting laser device with monolithically integrated photodiode |
| CN106848829A (en) * | 2017-04-17 | 2017-06-13 | 武汉盛为芯科技股份有限公司 | A kind of vertical-cavity surface-emitting coaxial packaging photoelectric device and its method for packing |
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| US20050105572A1 (en) * | 2003-11-14 | 2005-05-19 | Szutsun Simoun-Ou | Laser diode device |
| CN102017338A (en) * | 2008-05-09 | 2011-04-13 | 皇家飞利浦电子股份有限公司 | Vertical cavity surface emitting laser device with monolithically integrated photodiode |
| CN201303205Y (en) * | 2008-10-22 | 2009-09-02 | 华信光电科技股份有限公司 | Laser diode device |
| CN106848829A (en) * | 2017-04-17 | 2017-06-13 | 武汉盛为芯科技股份有限公司 | A kind of vertical-cavity surface-emitting coaxial packaging photoelectric device and its method for packing |
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