CN112201410A - Composite conductive film based on CVD and preparation method thereof - Google Patents
Composite conductive film based on CVD and preparation method thereof Download PDFInfo
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- CN112201410A CN112201410A CN202011036685.7A CN202011036685A CN112201410A CN 112201410 A CN112201410 A CN 112201410A CN 202011036685 A CN202011036685 A CN 202011036685A CN 112201410 A CN112201410 A CN 112201410A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Abstract
The invention discloses a CVD-based composite conductive film preparation method, which comprises the following steps: s100, preparing a film with a certain thickness as a base material, and coating silver nanowire ink on the surface of the base material to prepare a silver nanowire film layer; s200, baking the silver nanowire film layer to obtain a silver nanowire transparent conductive film; step S300, welding the silver nanowire transparent conductive film to form a silver nanowire conductive network with local welding nodes; s400, depositing and preparing an oxide conducting layer on the surface of the silver nanowire conducting network by adopting a CVD (chemical vapor deposition) method; and S500, arranging a polymer protective layer on the surface of the oxide conductive layer, and baking to obtain the composite conductive film. The invention provides a method for preparing a transparent conductive barrier material based on a Chemical Vapor Deposition (CVD) method, and the transparent conductive barrier material is coated on the surface of a silver nanowire, so that water vapor and oxygen can be effectively prevented from entering the surface of the silver nanowire, and the problem of oxidation failure of the silver nanowire material under the action of an electric field in the operation of a device is reduced.
Description
Technical Field
The invention relates to the technical field of conductive film preparation, in particular to a CVD-based conductive film and a preparation method thereof.
Background
In recent years, with the development of display panels and touch panels, transparent conductive film materials have been developed rapidly, and particularly, in order to meet the requirements of large-size display touch systems, low sheet resistance transparent conductive films, such as Silver Nanowire (SNW) transparent conductive films, Metal mesh (Metal mesh) transparent conductive films, and the like, have been increasingly emphasized and developed rapidly. Particularly, the silver nanowire transparent conductive film is very suitable for industrial production due to the coating technology, and occupies a major part in the transparent conductive film for the large-size touch panel.
In the working process of a touch or electric heating product based on the silver nanowire transparent conductive film, an important hidden danger exists, namely, under the action of an electric field, the silver nanowire can have the problem of surface oxidation, so that the sheet resistance of the transparent conductive film is increased, the surface pulverization and the reliability are reduced, and even the device is directly failed, which is the most important problem influencing the popularization and the application of the silver nanowire transparent conductive film. Therefore, a corresponding measure for inhibiting the surface oxidation of the silver nanowires must be introduced at the preparation stage of the conductive film, so as to minimize the related hidden troubles in the operation of the device.
For the reliability defect of easy oxidation of the silver nanowire conductive film, there are some solutions at present, such as integrally depositing a thicker (usually >10nm) inorganic transparent conductive film (such as ITO, FTO, AZO, etc.) by using a vacuum magnetron sputtering method, and covering the silver nanowire under these protective layers, however, these processing schemes may bring about several problems: 1. the protective layer is too thick, so that the conductive film is etched (usually by laser etching) to generate etched lines; 2. due to the introduction of the inorganic structural material, the flexibility of the silver nanowire transparent conductive film is poor, and the silver nanowire transparent conductive film is severely limited particularly when applied to an ultra-flexible (such as a folding) device.
The statements in the background section are merely prior art as they are known to the inventors and do not, of course, represent prior art in the field.
Disclosure of Invention
Aiming at one or more problems in the prior art, the invention provides a preparation method of a composite conductive film based on CVD (chemical vapor deposition), based on the market demand of a large-area flexible silver nanowire transparent conductive film and the application thereof in the field of electric heating, and the analysis of the reliability defect of the existing silver nanowire transparent conductive film under a high electric field, and the preparation method comprises the following steps:
s100, preparing a film with a certain thickness as a base material, and coating silver nanowire ink on the surface of the base material to prepare a silver nanowire film layer;
s200, baking the silver nanowire film layer to obtain a silver nanowire transparent conductive film;
step S300, welding the silver nanowire transparent conductive film to form a silver nanowire conductive network with local welding nodes;
s400, depositing and preparing an oxide conducting layer on the surface of the silver nanowire conducting network by adopting a CVD (chemical vapor deposition) method;
and S500, arranging a polymer protective layer on the surface of the oxide conductive layer, and baking to obtain the composite conductive film.
According to a preferred embodiment of one aspect of the present invention, the thickness of the substrate in step S100 is in a range of 0.01 to 10 mm, and the substrate material includes: glass, plastic.
According to a preferred embodiment of one aspect of the present invention, the silver solid content of the silver nanowire ink in the step S100 is in the range of 0.05 to 5 wt%.
According to a preferred aspect of one aspect of the present invention, the coating in step S100 includes: slit coating and spray coating.
According to a preferred embodiment of one aspect of the present invention, the drying temperature in step S200 is in the range of 120 to 180 ℃ and the drying time is in the range of 15 to 60 minutes, preferably 150 ℃ and 40 minutes.
According to a preferred aspect of one aspect of the present invention, the welding in the step S300 includes: laser irradiation welding and ultrasonic welding.
According to a preferred embodiment of one aspect of the present invention, the oxide material used in the CVD process in step S400 includes ITO, FTO, AZO, ZnO, preferably FTO.
According to a preferred embodiment of one aspect of the present invention, the polymer protective layer in step S500 is an acrylic acid hardened coating formed by a thermal curing process.
According to a preferable scheme of one aspect of the invention, the curing temperature range in the thermal curing process is 130-170 ℃, the curing time range is 30-60 minutes, the thickness of the high molecular protective layer after curing ranges from 0.5 micron to 5 microns, and the coating hardness ranges from 1H to 3H.
The composite conductive film obtained by the preparation method provided by the invention comprises the following components: the substrate, the silver nanowire film layer, the oxide conducting layer and the polymer protective layer; the thickness of the oxide conductive layer ranges from 2 nm to 10nm, and is preferably 3 nm.
The composite conductive film can effectively improve the self reliability of the silver nanowire transparent conductive film based on the CVD deposition technical scheme of the transparent barrier material, solve the problem that the silver nanowire film is easy to oxidize under the action of an electric field, and increase the integral transparency of the composite conductive film. In addition, the invention provides a technology for preparing the ultrathin transparent barrier material by introducing a Chemical Vapor Deposition (CVD) method, and the transparent conductive barrier material is coated on the surface of the silver nanowire, so that water vapor and oxygen can be effectively prevented from entering the surface of the silver nanowire, and the problem of oxidation failure of the silver nanowire material under the action of an electric field in the operation of a device is solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic flow diagram of a composite conductive film fabrication process according to one embodiment of the present invention;
FIG. 2 is a schematic cross-sectional structure of a composite conductive film according to an embodiment of the present invention;
fig. 3 is a schematic top view of a silver nanowire electrothermal film according to one embodiment of the present invention.
The notation in the figure is: 101-a substrate; 201-silver nanowire transparent conductive film; 301-silver nanowire conductive networks; 401-an oxide conductive layer; 501-a polymer protective layer; 601-a high temperature resistant protective layer; 701-silver paste electrode; 801-optically clear adhesive.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection, either mechanically, electrically, or in communication with each other; either directly or indirectly through intervening media, or may be connected internally or through an interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, a first feature being "on," "above," and "over" a second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and diagonally above the second feature, or merely means that the first feature is less in horizontal height than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. However, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize applications of other processes and/or uses of other materials.
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1-3, the invention discloses a composite conductive film based on CVD and a preparation method thereof, which are applied to the manufacture of transparent conductive films. As shown in fig. 1, a-E are process flow diagrams, wherein: A. preparing a film as a substrate 101; B. preparing a silver nanowire transparent conductive film 201 by a slit coating method; C. welding the silver nanowire transparent conductive film 201; D. preparing an ultrathin oxide conducting layer 401 by adopting a CVD (chemical vapor deposition) method; E. an acrylic protective coating is prepared as the polymeric protective layer 501.
Specifically, the composite conductive film based on CVD and the preparation method thereof comprise the following steps:
s100, preparing a film with a certain thickness as a base material 101, and coating silver nanowire ink on the surface of the base material 101 to prepare a silver nanowire film layer;
s200, baking the silver nanowire film layer to obtain a silver nanowire transparent conductive film 201;
step S300, welding the silver nanowire transparent conductive film 201 to form a silver nanowire conductive network 301 with local welding nodes;
s400, depositing and preparing an ultrathin oxide conducting layer 401 on the surface of the silver nanowire conducting network 301 by adopting a CVD (chemical vapor deposition) method;
step S500, preparing a polymer protective layer 501 on the surface of the oxide conductive layer 401, finishing coating of the polymer protective layer 501 by a coating mode, and baking to obtain the composite conductive film.
In one embodiment of the present invention, the thickness of the substrate 101 in step S100 is in the range of 0.01 to 10 mm, and the substrate 101 is made of materials including: glass, plastic.
In one embodiment of the present invention, the silver solid content of the silver nanowire ink in step S100 ranges from 0.05 to 5 wt%.
In one embodiment of the present invention, the coating in step S100 includes: slit coating and spray coating.
In one embodiment of the present invention, the drying temperature in step S200 ranges from 120 to 180 ℃ and the drying time ranges from 15 to 60 minutes, preferably 150 ℃ and 40 minutes.
In one embodiment of the present invention, the welding in step S300 includes: laser irradiation welding and ultrasonic welding.
In one embodiment of the present invention, the oxide material used in the CVD method in step S400 includes ITO, FTO, AZO, ZnO, preferably FTO.
In one embodiment of the present invention, the polymer protective layer 501 in step S500 is an acrylic hardened coating formed by a thermosetting process.
In one embodiment of the present invention, the curing temperature during the thermal curing process ranges from 130 to 170 ℃, the curing time ranges from 30 to 60 minutes, the thickness of the cured polymer protective layer 501 ranges from 0.5 to 5 micrometers, and the coating hardness ranges from 1 to 3H.
The composite conductive film obtained by the preparation method comprises the following steps: a base material 101, a silver nanowire film layer, an oxide conducting layer 401 and a polymer protective layer 501; the oxide conductive layer 401 has a thickness in the range of 2 to 10nm, preferably 3 nm.
Specifically, preferred embodiments of the present invention are illustrated in conjunction with the following examples.
Example one
Step 1, preparing a 0.125mm thick PET plastic film as a base material 101, attaching a 0.075mm thick high-temperature-resistant PET film as a high-temperature-resistant protective layer 601 to one surface of the base material 101, and forming a printing surface on the other surface of the base material 101. Coating silver nanowire ink on the printing surface of the substrate 101 by adopting a slit coating method, wherein the silver solid content of the silver nanowire ink is 0.1%, and preparing a silver nanowire film layer;
step 2, baking the prepared silver nanowire film layer to obtain a silver nanowire transparent conductive film 201, wherein the baking conditions are as follows: the temperature is 150 ℃, and the time is 40 minutes;
step 3, welding the prepared silver nanowire transparent conductive film 201 by adopting an ultrasonic process, so that lap joints of the silver nanowires are fused and combined together to form a silver nanowire conductive network 301 with local fusion joints;
step 4, depositing an ITO (indium tin oxide) oxide conducting layer 401 as a protective layer on the surface of the silver nanowire transparent conducting film 201 which is subjected to ultrasonic welding by adopting a CVD (chemical vapor deposition) method, so that an ITO film with good coating property is formed on the surface of the silver nanowire, wherein the average thickness of the ITO protective layer is 3 nm;
step 5, coating a layer of acrylic resin hardening protection as a high molecular protection layer 501 on the surface of the silver nanowire film on which the ITO thin oxide layer is deposited by adopting a slit coating method, and then performing baking treatment under the following treatment conditions: the temperature was 160 ℃ for 30 minutes, and thus a composite conductive film was obtained.
Example two
1) A0.125 mm thick PEN plastic film is prepared as a substrate 101, a 0.075mm thick heat-resistant PET film is attached to one side of the substrate 101 as a heat-resistant protective layer 601, and the other side of the substrate 101 is a printing surface. Coating silver nanowire ink on the printing surface of the substrate 101 by adopting a slit coating method, wherein the silver solid content of the silver nanowire ink is 0.1%, and preparing a silver nanowire film layer;
2) baking the prepared silver nanowire film layer to obtain a silver nanowire transparent conductive film 201, wherein the baking conditions are as follows: the temperature is 150 ℃, and the time is 40 minutes;
3) welding the prepared silver nanowire transparent conductive film 201 by adopting a laser radiation process, so that lap joints of the silver nanowires are fused and combined together to form a silver nanowire conductive network 301 with local fusion joints;
4) depositing a FTO (fluorine doped tin dioxide) oxide conducting layer 401 on the surface of the silver nanowire transparent conducting film 201 which is welded by laser radiation as a high molecular protective layer 501 by adopting a CVD (chemical vapor deposition) method, so as to form an FTO film with good coating property on the surface of the silver nanowire, wherein the average thickness of the FTO protective layer is 3 nm;
5) coating an acrylic resin hardening protective layer on the surface of the silver nanowire film on which the FTO oxide thin layer is deposited by adopting a slit coating method, and then baking the protective layer, wherein the processing conditions are as follows: the temperature is 160 ℃ for 30 minutes, so that the silver nanowire composite conductive film can be obtained.
Under the high-voltage work, the silver nanowire conductive film prepared by the method has considerable reliability under the high-voltage continuous electrifying work, and the specific data are shown in table 1. Table 1 all test samples were prepared as follows: the silver nanowire transparent composite conductive film prepared by the embodiment and the comparative example is adopted, the size is 40cm multiplied by 40cm, silver paste electrodes 701 arranged in parallel are printed on one side of the conductive film, and then the conductive film is packaged by optical transparent adhesive tape 801, so that the silver nanowire electric heating film is prepared, and the size of a heating area is actually 30cm multiplied by 30 cm. The preparation method of the transparent conductive film of the comparative example is the same as that of the transparent conductive film of the example 1 except that no ITO protective layer is used.
TABLE 1 results of reliability tests using the electrothermal film test method for the examples of the present invention and the comparative examples
| Serial number | Sample (I) | Resistance (omega) | Applying a voltage (V) | Energization time (h) | Resistance after test (omega) |
| 1 | Example 1 | 98.3 | 100 | 300 | 102.7 |
| 2 | Example 2 | 102.5 | 100 | 300 | 107.8 |
| 3 | Comparative example | 115.3 | 100 | 300 | 20M |
From the above test results, it can be seen that the transparent conductive films of examples 1 and 2 of the present invention can maintain stability well at high voltage (high current) for a long time, and the resistance change is no more than 8%, while the comparative examples have great resistance change before and after the test, which fully indicates that the silver nanowires cannot form continuous electrical connection after the test, and the silver nanowires have great reliability hidden danger when being used as a conductive material for an electrothermal film device without a protective layer.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A composite conductive film preparation method based on CVD is characterized by comprising the following steps:
s100, preparing a film with a certain thickness as a base material, and coating silver nanowire ink on the surface of the base material to prepare a silver nanowire film layer;
s200, baking the silver nanowire film layer to obtain a silver nanowire transparent conductive film;
step S300, welding the silver nanowire transparent conductive film to form a silver nanowire conductive network with local welding nodes;
s400, depositing and preparing an oxide conducting layer on the surface of the silver nanowire conducting network by adopting a CVD (chemical vapor deposition) method;
and S500, arranging a polymer protective layer on the surface of the oxide conductive layer, and baking to obtain the composite conductive film.
2. The CVD-based composite conductive film production method according to claim 1,
in the step S100, the thickness of the substrate ranges from 0.01 mm to 10 mm, and the substrate includes: glass, plastic.
3. The CVD-based composite conductive film production method according to claim 2,
the silver solid content of the silver nanowire ink in the step S100 ranges from 0.05 to 5 wt%.
4. The CVD-based composite conductive film production method according to claim 3,
the coating in the step S100 includes: slit coating and spray coating.
5. The CVD-based composite conductive film production method according to any one of claims 1 to 4,
the drying temperature in the step S200 is 120-180 ℃, and the drying time is 15-60 minutes, preferably 150 ℃ and 40 minutes.
6. The CVD-based composite conductive film production method according to any one of claims 1 to 5,
the welding in the step S300 includes: laser irradiation welding and ultrasonic welding.
7. The CVD-based composite conductive film production method according to any one of claims 1 to 6,
the oxide material used in the CVD method in step S400 includes ITO, FTO, AZO, and ZnO, and preferably FTO.
8. The CVD-based composite conductive film production method according to any one of claims 1 to 7,
in the step S500, the polymer protective layer is an acrylic acid hardened coating formed by a thermosetting process.
9. The CVD-based composite conductive film production method according to claim 8,
in the thermal curing process, the curing temperature range is 130-170 ℃, the curing time range is 30-60 minutes, the thickness range of the cured high polymer protective layer is 0.5-5 micrometers, and the coating hardness range is 1-3H.
10. The composite conductive film prepared according to any one of claims 1 to 9, comprising:
the substrate, the silver nanowire film layer, the oxide conducting layer and the polymer protective layer;
the thickness of the oxide conducting layer ranges from 2 nm to 10nm, and 3nm is preferred.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113436806A (en) * | 2021-05-13 | 2021-09-24 | 福州大学 | Preparation method of high-stability silver nanowire patterned conductive film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505149A (en) * | 2014-11-19 | 2015-04-08 | 东北师范大学 | Laminated transparent electrode and preparation method thereof |
| US20170067166A1 (en) * | 2015-04-03 | 2017-03-09 | C3Nano Inc. | Noble metal coated silver nanowires, methods for performing the coating |
| WO2017059444A1 (en) * | 2015-10-01 | 2017-04-06 | The Regents Of The University Of California | Thermally stable silver nanowire transparent electrode |
| CN106601382A (en) * | 2016-12-15 | 2017-04-26 | 华南理工大学 | Flexible transparent conductive film preparation method |
| CN106782891A (en) * | 2016-12-31 | 2017-05-31 | 浙江大学 | The preparation method of metal oxide compound silver nanometer line transparent conductive film |
| CN107230514A (en) * | 2016-03-23 | 2017-10-03 | 张家港康得新光电材料有限公司 | Flexible conductive film |
-
2020
- 2020-09-28 CN CN202011036685.7A patent/CN112201410A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505149A (en) * | 2014-11-19 | 2015-04-08 | 东北师范大学 | Laminated transparent electrode and preparation method thereof |
| US20170067166A1 (en) * | 2015-04-03 | 2017-03-09 | C3Nano Inc. | Noble metal coated silver nanowires, methods for performing the coating |
| WO2017059444A1 (en) * | 2015-10-01 | 2017-04-06 | The Regents Of The University Of California | Thermally stable silver nanowire transparent electrode |
| CN107230514A (en) * | 2016-03-23 | 2017-10-03 | 张家港康得新光电材料有限公司 | Flexible conductive film |
| CN106601382A (en) * | 2016-12-15 | 2017-04-26 | 华南理工大学 | Flexible transparent conductive film preparation method |
| CN106782891A (en) * | 2016-12-31 | 2017-05-31 | 浙江大学 | The preparation method of metal oxide compound silver nanometer line transparent conductive film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113436806A (en) * | 2021-05-13 | 2021-09-24 | 福州大学 | Preparation method of high-stability silver nanowire patterned conductive film |
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