CN112198205A - Oxygen sensor chip with short response time - Google Patents

Oxygen sensor chip with short response time Download PDF

Info

Publication number
CN112198205A
CN112198205A CN202010973173.7A CN202010973173A CN112198205A CN 112198205 A CN112198205 A CN 112198205A CN 202010973173 A CN202010973173 A CN 202010973173A CN 112198205 A CN112198205 A CN 112198205A
Authority
CN
China
Prior art keywords
electrode
sensor chip
zirconia
oxygen sensor
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010973173.7A
Other languages
Chinese (zh)
Other versions
CN112198205B (en
Inventor
徐斌
张文振
苗伟峰
胡延超
李敏
应俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Xinci Intelligent Technology Co ltd
Original Assignee
Suzhou Hesu Sensor Science & Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Hesu Sensor Science & Technology Co ltd filed Critical Suzhou Hesu Sensor Science & Technology Co ltd
Priority to CN202010973173.7A priority Critical patent/CN112198205B/en
Publication of CN112198205A publication Critical patent/CN112198205A/en
Application granted granted Critical
Publication of CN112198205B publication Critical patent/CN112198205B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/406Cells and probes with solid electrolytes
    • G01N27/407Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4071Cells and probes with solid electrolytes for investigating or analysing gases using sensor elements of laminated structure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/406Cells and probes with solid electrolytes
    • G01N27/407Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4073Composition or fabrication of the solid electrolyte
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/406Cells and probes with solid electrolytes
    • G01N27/407Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/41Oxygen pumping cells

Abstract

The invention discloses an oxygen sensor chip with short response time, which is integrally a sheet-shaped oxygen sensor chip and comprises an outer electrode, an inner electrode, a pin electrode, a zirconium oxide base layer, a reference oxygen base layer and a heating electrode. The invention can improve the response rate of the oxygen sensor chip, ensure that the oxygen sensor chip has high response rate and short response time, and ensure that the oxygen sensor chip has good use effect and excellent performance.

Description

Oxygen sensor chip with short response time
Technical Field
The invention relates to the field of chip type oxygen sensor chips, and particularly belongs to an oxygen sensor chip with short response time.
Background
The automobile oxygen sensor mainly comprises a sheet type oxygen sensor and a tubular type oxygen sensor, wherein the sheet type oxygen sensor is a newly developed oxygen sensor and has the advantages of fast heating and short response time. The sensor can control the increase and decrease of the fuel injection quantity of the fuel injector of the automobile engine through the ECU, so that the air-fuel ratio of the mixture (the mass ratio of air to gasoline is represented by A/F) is adjusted, and the air-fuel ratio of the mixture is enabled to be close to a theoretical value of 14.7. In addition, if the air-fuel ratio of the automobile engine reaches more than 14.7:1, the combustion efficiency of gasoline in the engine is higher, the engine is more economical and environment-friendly, the power output of the automobile engine can be improved, and the matched corresponding automobile oxygen sensor is a limiting current type oxygen sensor. The core component of the limiting current type oxygen sensor is an oxygen sensor chip, and whether the quality of the oxygen sensor chip is good or not plays a decisive role in the overall effect of the limiting current type oxygen sensor.
Some reports have been made on the technical research of oxygen sensor chips at home and abroad. For example, CN201010160291.2 discloses a sheet type oxygen sensor and a preparation method thereof, which comprises a heating body and an oxygen measuring body on the upper part of the heating body; the heating body comprises two insulating layers and a heating electrode clamped between the two insulating layers; the oxygen measuring body sequentially comprises a reference gas substrate, an electrolyte layer and a porous protective layer from bottom to top; the chip oxygen sensor also comprises a transition layer positioned between the heating body and the oxygen measuring body. The oxygen sensor chip with the structure has the characteristics of simplicity and practicability, but the oxygen sensor chip with the structure has the defects of long response time, 16s of response time and slow response speed. CN111521661A discloses a reference pump current formula oxygen sensor, it includes signal layer, tie coat, zone of heating, signal electrode, reference pump electrode, heating electrode and contact electrode, signal layer, tie coat and zone of heating set up from last to down, signal layer and zone of heating pass through the tie coat and bond together, the signal layer outside is provided with signal electrode, the inside reference pump electrode that is provided with of signal layer. The oxygen sensor chip with the structure has the characteristics of improving the signal precision and the rapid preparation speed after the engine is started, and has the defect that when a small amount of oxygen is pumped into the inner electrode and the outer electrode and reference oxygen is made at the inner electrode, the response speed of the oxygen sensor chip is not considered, and whether the rapid response requirement can be met or not is overcome.
Therefore, the invention provides an oxygen sensor chip with short response time, which adopts a pair of outer electrodes and a pair of inner electrodes, and the outer electrodes and the inner electrodes are respectively connected in a short circuit mode, so that the overall response rate of the oxygen sensor chip is improved.
Disclosure of Invention
The invention provides an oxygen sensor chip with short response time, which solves the problems mentioned in the background technology through the overall research and development design of an external electrode, an internal electrode, a pin electrode, a zirconia base layer, a reference oxygen base layer, a heating electrode, an electrode auxiliary electrode, an external electrode auxiliary electrode, a zirconia upper layer with a left upper pore and a right lower pore, a zirconia lower layer with a left upper pore, and a reference oxygen base layer with a left upper pore and a left lower pore. Meanwhile, the invention can improve the response rate of the oxygen sensor chip, ensure that the oxygen sensor chip has high response rate and short response time, ensure that the oxygen sensor chip has good use effect and excellent performance, and is suitable for popularization and use in the process of producing the oxygen sensor chip.
The technical scheme adopted by the invention for realizing the aim is as follows:
the utility model provides a response time short oxygen sensor chip, wholly is slice oxygen sensor chip, includes outer electrode, inner electrode, pin electrode, zirconia basic unit, reference oxygen basic unit, heating electrode, its characterized in that still includes inner electrode auxiliary electrode, outer electrode and pin electrode are located same aspect, and zirconia basic unit has zirconia upper strata and zirconia lower floor, from the top down between zirconia upper strata and the zirconia lower floor, accompanies inner electrode, reference oxygen basic unit, inner electrode auxiliary electrode, heating electrode in proper order, there is outer electrode auxiliary electrode on the downside of zirconia lower floor, there is the fluting above the reference oxygen basic unit, and the fluting can be as the passageway of reference oxygen, the zirconia upper strata has upper left aperture and lower right aperture, and the zirconia lower floor has upper left hole, and reference oxygen basic unit has upper left aperture and lower left aperture, the auxiliary electrode of the outer electrode is connected with the outer electrode through a small hole at the upper left of the upper zirconia layer, a small hole at the upper left of the lower zirconia layer and a small hole at the upper left of the reference oxygen base layer.
Preferably, the internal electrode auxiliary electrode and the internal electrode are connected through a lower left pore of the reference oxygen gas substrate.
Preferably, the inner electrode is connected with the pin electrode through a small hole at the lower right of the upper layer of the zirconia.
Preferably, the upper zirconia layer and the lower zirconia layer are made of yttrium-containing stabilized zirconia nanopowder.
Preferably, the powder for preparing the upper zirconia layer and the lower zirconia layer contains: 80 parts of saint-goban 5Y-ZrO2 powder (the unit of the part is gram in the invention), 10 parts of PVB binder and 100 parts of solvent butanone, mixing, ball-milling for 96 hours, then defoaming, casting to prepare a green blank, drying and cutting to prepare the saint-goban 5Y-ZrO2 powder, wherein the saint-goban 5Y-ZrO2 powder is produced by France saint-goban company, the PVB binder is produced by Luoyang Shuran chemical products company Limited, and the solvent butanone is produced by Jiangsu Jiasong chemical products company Limited.
Preferably, the reference oxygen substrate is made of powder containing nano alumina.
Preferably, the reference oxygen gas base layer is made of powder comprising: 78 parts of nano alumina, 10 parts of PVB binder and 100 parts of solvent butanone are mixed, milled for 96 hours by three rollers, then defoamed, cast and made into a green body, dried and cut to prepare the nano alumina, wherein the nano alumina is produced by Xuancheng crystalloid new material company Limited, the PVB binder is produced by Luoyang crystalloid chemical product company Limited, and the solvent butanone is produced by Jiangsu Jiasong chemical product company Limited.
Preferably, the reference oxygen substrate is provided with a groove thereon, so that a small gap can be formed on the right side surface of the reference oxygen substrate.
Preferably, the response time of the sheet-shaped oxygen sensor chip is less than or equal to 9s, and the response time of the sheet-shaped oxygen sensor chip is preferably 9 s.
Compared with the prior art, the invention has the following beneficial effects:
the sensor chip with short response time is manufactured by integrally and optimally designing and combining an outer electrode, an inner electrode, a pin electrode, a zirconium oxide base layer, a reference oxygen base layer, a heating electrode, an electrode auxiliary electrode and an outer electrode auxiliary electrode, wherein the upper layer of zirconium oxide is provided with a left upper small hole and a right lower small hole, the lower layer of zirconium oxide is provided with a left upper hole, and the reference oxygen base layer is provided with a left upper small hole and a left lower small hole. The defects that a common oxygen sensor chip has long response time (the response time of the common oxygen sensor chip is 16s) and slow response speed in actual use are overcome, and the defects that the response speed of the oxygen sensor chip is not considered when a small amount of oxygen is pumped into the inner electrode and the outer electrode and reference oxygen is made at the inner electrode of the original reference pump current type oxygen sensor chip are overcome, and the requirement for quick response can be met or not are overcome.
The oxygen sensor chip has the advantages that the response speed of the oxygen sensor chip can be improved, the fast response speed and the short response time of the oxygen sensor chip are ensured, the response time of the oxygen sensor chip is 9s, the good use effect and the excellent performance of the oxygen sensor chip are ensured, and the oxygen sensor chip is suitable for being popularized and used in the process of producing the oxygen sensor chip.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is an exploded view of the overall structure of the present invention;
FIG. 3 is a graph of the response of a sensor corresponding to the CN201010160291.2 oxygen sensor chip product, wherein the abscissa represents time in units of s and the ordinate represents voltage in units of mv;
FIG. 4 is a graph of the response of an oxygen sensor chip of the present invention plotted against time in s on the abscissa and voltage in mv on the ordinate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present invention will be described in further detail with reference to examples and specific embodiments.
Referring to the drawings: the utility model provides a response time short oxygen sensor chip, wholly is slice oxygen sensor chip, includes outer electrode 1, inner electrode 4, pin electrode 2, zirconia basic unit, reference oxygen basic unit 5, heating electrode 7, its characterized in that still includes inner electrode auxiliary electrode 6, outer electrode auxiliary electrode 9, outer electrode 1 is located same aspect with pin electrode 2, and the zirconia basic unit has zirconia upper strata 3 and zirconia lower floor 8, from the top down between zirconia upper strata 3 and the zirconia lower floor 8, accompanies inner electrode 4, reference oxygen basic unit 5, inner electrode auxiliary electrode 6, heating electrode 7 in proper order, there is outer electrode auxiliary electrode 9 on the downside of zirconia lower floor 8, there is fluting 501 above the reference oxygen basic unit 5, fluting 501 can regard as the passageway of reference oxygen, zirconia upper strata 3 has upper left side aperture 301 and right side below aperture 302, the zirconia lower layer 8 is provided with an upper left hole 801, the reference oxygen base layer 5 is provided with an upper left hole 502 and a lower left hole 503, the outer electrode auxiliary electrode 9 is communicated with the outer electrode 1, and the upper left hole 301 of the zirconia upper layer 3, the upper left hole 801 of the zirconia lower layer 8 and the upper left hole 502 of the reference oxygen base layer 5 are connected.
Preferably, the internal electrode auxiliary electrode 6 and the internal electrode 4 are connected through the lower left aperture 503 of the reference oxygen substrate 5.
Preferably, the internal electrode 4 is connected with the pin electrode 2 through a small hole 302 at the lower right of the zirconia upper layer 3.
Preferably, the zirconia upper layer 3 and the zirconia lower layer 8 are made of yttrium-containing stabilized zirconia nanopowder.
Preferably, the powder for preparing the zirconia upper layer 3 and the zirconia lower layer 8 contains: 80 parts of saint-goban 5Y-ZrO2 powder, 10 parts of PVB binder and 100 parts of solvent butanone, mixing, performing ball milling for 96 hours, then performing deaeration and tape casting to prepare a green body, drying and cutting to prepare the blank, wherein the saint-goban 5Y-ZrO2 powder is produced by France saint-goban company, the PVB binder is produced by Luoyang Shuran chemical products company Limited, and the solvent butanone is produced by Jiangsu Jiasong chemical industry company Limited.
Preferably, the reference oxygen substrate 5 is made of powder containing nano alumina.
Preferably, the reference oxygen substrate 5 is made of powder comprising: 78 parts of nano alumina, 10 parts of PVB binder and 100 parts of solvent butanone are mixed, milled for 96 hours by three rollers, then defoamed, cast and made into a green body, dried and cut to prepare the nano alumina, wherein the nano alumina is produced by Xuancheng crystalloid new material company Limited, the PVB binder is produced by Luoyang crystalloid chemical product company Limited, and the solvent butanone is produced by Jiangsu Jiasong chemical product company Limited.
Preferably, the notch 501 on the reference oxygen substrate 5 can form a small notch on the right side of the reference oxygen substrate 5.
Preferably, the response time of the sheet-shaped oxygen sensor chip is less than or equal to 9s, and the response time of the sheet-shaped oxygen sensor chip is preferably 9s (as marked by a dotted line vertical to the abscissa in fig. 4).
When the oxygen sensor chip with short response time is manufactured, an outer electrode 1, an inner electrode 4, a pin electrode 2, a lead and silver colloid are printed on a green body of a zirconia upper layer 3; the heating electrode 7 and the silver colloid are printed on the green blank of the reference oxygen base layer 5; printing an inner electrode auxiliary electrode 6, an outer electrode auxiliary electrode 9 and silver colloid on a green body of a lower zirconia layer 8; then, the above-mentioned materials are subjected to isostatic pressing once (in the order shown in fig. 2), and then subjected to high-temperature isostatic pressing sintering at a sintering temperature of 1500 ℃, thereby completing the chip of the present invention.
The oxygen sensor chip with short response time manufactured by the invention can solve the defects of long response time (the response time of the common oxygen sensor chip is 16s, as marked by a vertical abscissa dotted line in fig. 3) and slow response speed of the common oxygen sensor chip in practical use. The response time of the oxygen sensor chip of the product of the invention is 9s (as marked by a dotted line of a vertical abscissa in fig. 4); meanwhile, the defect that whether the fast response requirement can be met or not by considering the response rate of the oxygen sensor chip when a small amount of oxygen is pumped into the inner electrode and the outer electrode and reference oxygen is made at the position of the inner electrode 4 in the original reference pump current type oxygen sensor chip is solved.
The invention can improve the response rate of the oxygen sensor chip, ensure that the oxygen sensor chip has high response rate and short response time, and simultaneously ensure that the whole use effect of the oxygen sensor chip is good and the performance is excellent, thereby being suitable for popularization and use in the process of producing the oxygen sensor chip.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the inventive concept of the present invention, and these changes and modifications are all within the scope of the present invention.

Claims (9)

1. The utility model provides a response time short oxygen sensor chip, wholly is slice oxygen sensor chip, includes outer electrode, inner electrode, pin electrode, zirconia basic unit, reference oxygen basic unit, heating electrode, its characterized in that still includes inner electrode auxiliary electrode, outer electrode and pin electrode are located same aspect, and zirconia basic unit has zirconia upper strata and zirconia lower floor, from the top down between zirconia upper strata and the zirconia lower floor, accompanies inner electrode, reference oxygen basic unit, inner electrode auxiliary electrode, heating electrode in proper order, there is outer electrode auxiliary electrode on the downside of zirconia lower floor, there is the fluting above the reference oxygen basic unit, and the fluting can be as the passageway of reference oxygen, the zirconia upper strata has upper left aperture and lower right aperture, and the zirconia lower floor has upper left hole, and reference oxygen basic unit has upper left aperture and lower left aperture, the auxiliary electrode of the outer electrode is connected with the outer electrode through a small hole at the upper left of the upper zirconia layer, a small hole at the upper left of the lower zirconia layer and a small hole at the upper left of the reference oxygen base layer.
2. The short response time oxygen sensor chip of claim 1, wherein said internal electrode auxiliary electrode and internal electrode are connected through a lower left aperture of a reference oxygen substrate.
3. The short-response-time oxygen sensor chip of claim 1, wherein the internal electrode is connected to the pin electrode through a small hole at the lower right of the upper layer of zirconia.
4. The short response time oxygen sensor chip of claim 1, wherein the upper and lower zirconia layers are made of yttrium-containing stabilized zirconia nanopowder.
5. The oxygen sensor chip with short response time according to claim 4, wherein the powder for preparing the upper zirconia layer and the lower zirconia layer comprises: 80 parts of saint-goban 5Y-ZrO2 powder, 10 parts of PVB binder and 100 parts of solvent butanone, mixing, performing ball milling for 96 hours, then performing deaeration and tape casting to prepare a green body, drying and cutting to prepare the blank, wherein the saint-goban 5Y-ZrO2 powder is produced by France saint-goban company, the PVB binder is produced by Luoyang Shuran chemical products company Limited, and the solvent butanone is produced by Jiangsu Jiasong chemical industry company Limited.
6. The short response time oxygen sensor chip of claim 1, wherein said reference oxygen substrate is made of powder containing nano alumina.
7. The short-response-time oxygen sensor chip of claim 6, wherein the reference oxygen substrate is made of a powder having: 78 parts of nano alumina, 10 parts of PVB binder and 100 parts of solvent butanone are mixed, milled for 96 hours by three rollers, then defoamed, cast and made into a green body, dried and cut to prepare the nano alumina, wherein the nano alumina is produced by Xuancheng crystalloid new material company Limited, the PVB binder is produced by Luoyang crystalloid chemical product company Limited, and the solvent butanone is produced by Jiangsu Jiasong chemical product company Limited.
8. The short response time oxygen sensor chip of claim 1, wherein said reference oxygen substrate has a slot formed therein to allow a small gap to be formed in the right side of said reference oxygen substrate.
9. The short-response-time oxygen sensor chip according to any one of claims 1 to 8, wherein the response time of the sheet-like oxygen sensor chip is 9s or less, and the response time of the sheet-like oxygen sensor chip is preferably 9 s.
CN202010973173.7A 2020-09-16 2020-09-16 Oxygen sensor chip with short response time Active CN112198205B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010973173.7A CN112198205B (en) 2020-09-16 2020-09-16 Oxygen sensor chip with short response time

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010973173.7A CN112198205B (en) 2020-09-16 2020-09-16 Oxygen sensor chip with short response time

Publications (2)

Publication Number Publication Date
CN112198205A true CN112198205A (en) 2021-01-08
CN112198205B CN112198205B (en) 2022-11-29

Family

ID=74015071

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010973173.7A Active CN112198205B (en) 2020-09-16 2020-09-16 Oxygen sensor chip with short response time

Country Status (1)

Country Link
CN (1) CN112198205B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6572747B1 (en) * 1999-03-08 2003-06-03 Delphi Technologies, Inc. Method for making a wide range sensor element
US20040084309A1 (en) * 2002-11-01 2004-05-06 Ngk Spark Plug Co., Ltd. Gas sensor having a laminate comprising solid electrolyte layers and alumina substrate
CN101000320A (en) * 2006-12-25 2007-07-18 杨世养 Chip oxygen sensor and its preparation method
CN102841121A (en) * 2012-06-25 2012-12-26 郑龙华 Wide-band oxygen sensor chip and manufacturing method therefor
CN204925022U (en) * 2015-04-30 2015-12-30 江西宇科电子有限公司 Novel flat four -wire type oxygen sensor chip
CN108732224A (en) * 2018-06-06 2018-11-02 成都科锐传感技术有限公司 A kind of Novel double-battery matrix formula broad domain oxygen sensor and preparation method thereof
CN209764784U (en) * 2019-04-17 2019-12-10 成都科锐传感技术有限公司 Sheet type wide-area oxygen sensor without additional insulation
CN111521661A (en) * 2020-05-25 2020-08-11 深圳安培龙科技股份有限公司 Reference pump current type oxygen sensor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6572747B1 (en) * 1999-03-08 2003-06-03 Delphi Technologies, Inc. Method for making a wide range sensor element
US20040084309A1 (en) * 2002-11-01 2004-05-06 Ngk Spark Plug Co., Ltd. Gas sensor having a laminate comprising solid electrolyte layers and alumina substrate
CN101000320A (en) * 2006-12-25 2007-07-18 杨世养 Chip oxygen sensor and its preparation method
CN102841121A (en) * 2012-06-25 2012-12-26 郑龙华 Wide-band oxygen sensor chip and manufacturing method therefor
CN204925022U (en) * 2015-04-30 2015-12-30 江西宇科电子有限公司 Novel flat four -wire type oxygen sensor chip
CN108732224A (en) * 2018-06-06 2018-11-02 成都科锐传感技术有限公司 A kind of Novel double-battery matrix formula broad domain oxygen sensor and preparation method thereof
CN209764784U (en) * 2019-04-17 2019-12-10 成都科锐传感技术有限公司 Sheet type wide-area oxygen sensor without additional insulation
CN111521661A (en) * 2020-05-25 2020-08-11 深圳安培龙科技股份有限公司 Reference pump current type oxygen sensor

Also Published As

Publication number Publication date
CN112198205B (en) 2022-11-29

Similar Documents

Publication Publication Date Title
CN102608193B (en) Flat oxygen sensor and preparation method thereof
CN106706727B (en) Chip type wide-area automobile oxygen sensor and preparation method thereof
CN103185738B (en) A kind of electrode of oxygen sensor, the potentiometric oxygen sensor with this electrode and preparation method thereof
CN102954993A (en) Oxygen sensor and preparation method thereof
CN108732224A (en) A kind of Novel double-battery matrix formula broad domain oxygen sensor and preparation method thereof
CN102798653A (en) Automobile sheet-structured oxygen sensor and its preparation method
CN108872482B (en) Diaphragm of nitrogen oxygen sensor ceramic chip
CN108956741A (en) A kind of automobile-used chip oxygen sensor of Novel double-battery type motor and preparation method thereof
CN108414602B (en) Wide-area linear oxygen sensor and manufacturing method thereof
CN102786294A (en) Insulating layer slurry of chip-type oxygen sensor and insulating layer preparation method
CN112198205B (en) Oxygen sensor chip with short response time
CN202522539U (en) Flat-plate oxygen sensor
CN204008549U (en) A kind of slice structure lambda sensor
CN108645907B (en) Limit current type linear oxygen sensor and manufacturing method
CN102183567B (en) Manufacture method for limiting current type oxygen sensor
CN105044174A (en) Novel limited current type plate oxygen sensor
CN115825193A (en) Limiting current type oxygen sensor and preparation method thereof
CN108469463A (en) A kind of novel nitrogen oxide sensor chip and preparation method thereof
CN114660154A (en) Nitrogen-oxygen sensor chip and preparation method thereof
CN111122678B (en) Vehicle oxygen sensor with fast response and strong anti-interference capability
CN108760823B (en) Sheet type oxygen sensor for motorcycle and preparation method thereof
CN206057243U (en) Chip of sheet oxygen sensor
CN117233233B (en) Intelligent wide-area five-wire oxygen sensor chip and manufacturing method thereof
CN107121473B (en) Oxygen sensor ceramic chip and preparation method thereof
CN208621556U (en) A kind of carrying current formula linear oxygen sensors

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20221102

Address after: 313000 No. 101-102, building 15, Dongyuan intelligent industrial park, high tech Zone, Wuxing District, Huzhou City, Zhejiang Province

Applicant after: Zhejiang Xinci Intelligent Technology Co.,Ltd.

Address before: 215000 E / F, building 4, modern industrial square, 333 Xingpu Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province

Applicant before: SUZHOU HESU SENSOR SCIENCE & TECHNOLOGY CO.,LTD.

GR01 Patent grant
GR01 Patent grant