Background
The energy router is a power device which integrates an information technology and a power electronic conversion technology and realizes efficient utilization and transmission of distributed energy. The power electronic conversion technology enables the energy router to provide required electric energy interface forms for various types of distributed power supplies, energy storage devices and novel loads, and the electric energy interface forms comprise direct current or alternating current forms with various voltages and current quantities. Meanwhile, due to the high controllability of the power electronic device, the direction and the size of the energy flow of each node in the power distribution network can be accurately controlled according to the needs of users, and a technical basis is provided for realizing the marketization of the power. The information technology enables the energy router to achieve intellectualization, the power distribution network performs autonomous operation under the control of the energy router, and the upper-layer power dispatching center only needs to send optimized operation parameters with a long time scale into the power distribution network so as to achieve optimized operation of the whole network. The energy router can be used as an interactive interface between the power local area network and the backbone network, is in charge of the operation and energy management of each device inside the local area network on one hand, and meanwhile receives instructions of the upper-layer power dispatching center and uploads the operation state of the local area network.
A DAB (Dual Active Bridge) converter based on a phase-shift control technology is a core technology of an energy router, and direct-current voltage isolation and conversion are achieved through a high-frequency transformer. Compared with the voltage reduction and isolation of a power frequency transformer, the transformer has the advantages of greatly reduced volume, greatly reduced cost, high power density, fast dynamic response, easy realization of soft switching, bidirectional power flow and the like.
In order to enable the energy router to adapt to a wider direct-current port voltage range, the diode clamping hybrid three-level DAB converter can obtain an additional independent control variable by adding an intermediate level capable of controlling the duty ratio, so that the design limit of the traditional two-level DAB converter is broken through, the conversion efficiency of input and output power in the whole voltage range and power range is improved, and the global optimization operation is realized. How to determine duty ratios of different levels and how to coordinate four independent control variables to reduce the current stress and the current effective value of an isolated DC-DC transformer in DC-DC voltage conversion is a problem to be solved urgently on the topological structure and the control method of the diode clamping hybrid three-level DAB converter.
Disclosure of Invention
An object of the embodiments of the present invention is to provide a method and an apparatus for controlling a diode-clamped hybrid three-level DAB converter, so as to solve the above technical problems.
To achieve the above object, embodiments of the present invention provide a hybrid for diode clampingThe control method of the three-level DAB converter comprises the steps that the diode clamping mixed three-level DAB converter comprises a primary side diode clamping mixed three-level full bridge H1Secondary single phase full bridge H2High-frequency isolation transformer and high-frequency inductor LsWherein the primary diode clamp hybrid three-level full bridge comprises a fully-controlled switching device S1~S6The secondary single-phase full bridge comprises a full-control switch Q1~Q4The method comprises the following steps: measuring the current i of the high frequency inductor of the diode clamped hybrid three-level DAB converterLInput voltage vinAnd an output voltage vout(ii) a According to said input voltage vinThe output voltage voutAnd calculating a voltage transmission ratio M according to the transformation ratio N of the high-frequency isolation transformer; according to the output voltage voutCalculating adaptive controller output x by using adaptive controller parameters; according to said input voltage vinThe output voltage voutCurrent i of the high-frequency inductorLCalculating a capacitance charge allowance factor by using the transformation ratio N of the high-frequency isolation transformer1,a(ii) a According to the voltage transfer ratio M, the output x of the adaptive controller and the margin factor of the capacitance charge1,aDetermining a shift control amount; and driving the fully-controlled switching device S according to the shift control amount1~S6And a fully-controlled switching device Q1~Q4。
Optionally, according to said input voltage vinThe output voltage voutCurrent i of the high-frequency inductorLCalculating a capacitance charge allowance factor by using the transformation ratio N of the high-frequency isolation transformer1,aComprising calculating a capacitance charge margin factor for zero voltage switching ZVS according to1,a:
Where t represents time.
Optionally, the shift control amount includes four shift control amounts, each being Dp0,zvzc、Dp1,zvzc、Ds0,zvzc、Dss,zvzcAnd determining the move-to-control amount comprises:
at a voltage transmission ratio M of
In the case of (2), the shift control amount is calculated according to the following equation:
at a voltage transmission ratio M of
In the case of (2), the shift control amount is calculated according to the following equation:
where t represents time.
Optionally, according to said output voltage voutCalculating adaptive controller output x by adaptive controller parameters, including calculating the adaptive controller output x according to the following formula:
wherein, ω issFor switching frequency, omegas2 pi/T, wherein T is a preset switching period; λ, kpAnd kiFor the preset adaptive controller parameters, wherein lambda is a load factor and satisfies 0<λ<0.1, a load differential factor and satisfies 0<<0.01,kpK is more than or equal to 0.1p≤5,kiK is not less than 0.001i≤1;vrefIs a reference voltage; t is time; x is in the range of [0,1-2M]。
Optionally, the fully-controlled switching device S is driven according to the shift control quantity1~S6And a fully-controlled switching device Q1~Q4The method comprises the following steps: controlling a fully-controlled switching device S1Has an ON time of 0 and an OFF time of (D)p0,zvzc+Dp1,zvzc) T and controls a fully controlled switching device S3And a fully-controlled switching device S1Performing complementary work; controlling a fully-controlled switching device S4Has an on time of T and an off time of (1+ D)p0,zvzc+Dp1,zvzc) T and controls a fully controlled switching device S2And a fully-controlled switching device S4Performing complementary work; controlling a fully-controlled switching device S6Has a turn-on time of Dp0,zvzcT, turn-off time is (1+ D)p0,zvzc) T and controls a fully controlled switching device S5And a fully-controlled switching device S6Performing complementary work; controlling a fully-controlled switching device Q1Has a turn-on time of Dss,zvzcT, turn-off time is (1+ D)ss,zvzc) T and controls the fully-controlled switching device Q2And a fully-controlled switching device Q1Performing complementary work; and controlling the fully-controlled switching device Q3Has an on time of (D)s0,zvzc+Dss,zvzc) T, turn-off time is (D)s0,zvzc+Dss,zvzc+1) T and controls the fully controlled switching device Q4And a fully-controlled switching device Q3And complementary operation, wherein T is a preset switching period.
Optionally, the method further includes: clamping the primary diode to mix with a three-level full bridge H1Control signal + -v of each fully-controlled switching deviceinDuty ratio of level is set to Dp1,zvzc(ii) a Clamping the primary diode to mix with a three-level full bridge H1The duty ratio of the control signal 0 level of each full-control switching device is set to be Dp0,zvzc(ii) a The secondary side is connected with a single-phase full bridge H2The duty ratio of the control signal 0 level of each full-control switching device is set to be Ds0,zvzc(ii) a And clamping the primary diode to mix with a three-level full bridge H1And the secondary single-phase full bridge H2Relative phase shift ratio therebetween is set to Dss,zvzc。
Optionally, the shift control amount satisfies:
0<Dss,zvzc<Dss,zvzc+Ds0,zvzc<Dp0,zvzc<Dp0,zvzc+Dp1,zvzc<1。
correspondingly, the embodiment of the invention also provides a control device for the diode clamping mixed three-level DAB converter, and the diode clamping mixed three-level DAB converter comprises a primary side diode clamping mixed three-level full bridge H1Secondary single phase full bridge H2High-frequency isolation transformer and high-frequency inductor LsWherein the primary diode clamp hybrid three-level full bridge comprises a fully-controlled switching device S1~S6The secondary single-phase full bridge comprises a full-control switch Q1~Q4The device comprises: a sampling unit for measuring the current i of the high-frequency inductor of the diode-clamped hybrid three-level DAB converterLInput voltage vinAnd an output voltage vout(ii) a An adaptive controller to: according to said input voltage vinThe output voltage voutAnd calculating a voltage transmission ratio M according to the transformation ratio N of the high-frequency isolation transformer; according to the output voltage voutCalculating adaptive controller output x by using adaptive controller parameters; and according to said input voltage vinThe output voltage voutCurrent i of the high-frequency inductorLCalculating a capacitance charge allowance factor by using the transformation ratio N of the high-frequency isolation transformer1,a(ii) a And according to the voltage transfer ratio M, the adaptive controller output x, and the capacitance charge margin factor1,aDetermining a shift control amount; and a modulation unit for driving the fully-controlled switching device S according to the shift control amount1~S6And a fully-controlled switching device Q1~Q4。
Optionally, the adaptive controller calculates a capacitance charge margin factor of the ZVS switching at zero voltage according to the following formula1,a:
Where t represents time.
Optionally, the shift control amount includes four shift control amounts, each being Dp0,zvzc、Dp1,zvzc、Ds0,zvzc、Dss,zvzcThe adaptive controller calculates the phase shift control amount according to the following steps:
at a voltage transmission ratio M of
In the case of (2), the shift control amount is calculated according to the following equation:
at a voltage transmission ratio M of
In the case of (2), the shift control amount is calculated according to the following equation:
where t represents time.
Optionally, the adaptive controller calculates the adaptive controller output x according to the following formula:
wherein, ω issFor switching frequency, omegas2 pi/T, wherein T is a preset switching period; λ, kpAnd kiFor the preset adaptive controller parameters, wherein lambda is a load factor and satisfies 0<λ<0.1, a load differential factor and satisfies 0<<0.01,kpK is more than or equal to 0.1p≤5,kiK is not less than 0.001i≤1;vrefIs a reference voltage; t is time; x is in the range of [0,1-2M]。
OptionallyThe modulation unit is used for driving the fully-controlled switching device S according to the following steps1~S6And a fully-controlled switching device Q1~Q4: controlling a fully-controlled switching device S1Has an ON time of 0 and an OFF time of (D)p0,zvzc+Dp1,zvzc) T and controls a fully controlled switching device S3And a fully-controlled switching device S1Performing complementary work; controlling a fully-controlled switching device S4Has an on time of T and an off time of (1+ D)p0,zvzc+Dp1,zvzc) T and controls a fully controlled switching device S2And a fully-controlled switching device S4Performing complementary work; controlling a fully-controlled switching device S6Has a turn-on time of Dp0,zvzcT, turn-off time is (1+ D)p0,zvzc) T and controls a fully controlled switching device S5And a fully-controlled switching device S6Performing complementary work; controlling a fully-controlled switching device Q1Has a turn-on time of Dss,zvzcT, turn-off time is (1+ D)ss,zvzc) T and controls the fully-controlled switching device Q2And a fully-controlled switching device Q1Performing complementary work; and controlling the fully-controlled switching device Q3Has an on time of (D)s0,zvzc+Dss,zvzc) T, turn-off time is (D)s0,zvzc+Dss,zvzc+1) T and controls the fully controlled switching device Q4And a fully-controlled switching device Q3And complementary operation, wherein T is a preset switching period.
Optionally, the modulation unit is further configured to: clamping the primary diode to mix with a three-level full bridge H1Control signal + -v of each fully-controlled switching deviceinDuty ratio of level is set to Dp1,zvzc(ii) a Clamping the primary diode to mix with a three-level full bridge H1The duty ratio of the control signal 0 level of each full-control switching device is set to be Dp0,zvzc(ii) a The secondary side is connected with a single-phase full bridge H2The duty ratio of the control signal 0 level of each full-control switching device is set to be Ds0,zvzc(ii) a And clamping the primary diode to mix with a three-level full bridge H1And the secondary single-phase full bridge H2Relative phase shift ratio therebetween is set to Dss,zvzc。
Optionally, the shift control amount satisfies:
0<Dss,zvzc<Dss,zvzc+Ds0,zvzc<Dp0,zvzc<Dp0,zvzc+Dp1,zvzc<1。
correspondingly, the embodiment of the invention also provides an energy router, and the direct-current port of the energy router adopts the diode clamping hybrid three-level DAB converter controlled by the method.
The control method and the device for the diode clamping hybrid three-level DAB converter have the following beneficial effects that: by introducing a capacitance charge allowance factor, the self-adaptive load tracking condition is realized, so that the current effective value and the current stress of the diode clamping hybrid three-level DAB converter can be effectively reduced, zero-voltage switching-on of a high-voltage side and heavy-current zero-current switching-off of a low-voltage side are realized, the switching loss and the switching-on loss are finally reduced, and the efficiency of direct-current voltage conversion of the energy router is improved.
Additional features and advantages of embodiments of the invention will be set forth in the detailed description which follows.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating embodiments of the invention, are given by way of illustration and explanation only, not limitation.
The control method and the device for the diode clamping hybrid three-level DAB converter provided by the embodiment of the invention are implemented based on the diode clamping hybrid three-level DAB converter. The structure of the pole tube clamped hybrid three-level DAB converter will be described first.
Figure 1 shows a schematic of the structure of a diode clamped hybrid three level DAB converter. As shown in fig. 1, the diode clamp hybrid three-level DAB converter can include: input filter capacitor CinpAnd CinnAn output filter capacitor CoDC voltage source, primary diode clamping mixed three-level full bridge H1(original side full bridge) and secondary side single-phase full bridge H2(secondary side full bridge for short), high-frequency isolation transformer, high-frequency inductor Ls. The primary diode clamping mixed three-level full bridge H1Mainly comprises 6 fully-controlled switching devices S1~S6And two diodes D1、D2Composition in which the switching device S is fully controlled1~S4And a diode D1、D2Form a diode clamping three-level bridge arm and a full-control switch device S5、S6To form a two-level bridge arm. Secondary single-phase full bridge H2The four fully-controlled switching devices are Q1~Q4. The primary diode clamping mixed three-level full bridge H1The positive electrode of the direct current bus, the positive electrode of the corresponding direct current voltage source and the input filter capacitor CinpThe positive electrodes of (a) and (b) are connected. Primary diode clamping mixed three-level full bridge H1The negative pole of the DC bus, the negative pole of the corresponding DC voltage source and the input filter capacitor CinnAre connected with each other. Primary sideDiode clamping hybrid three-level full bridge H1The neutral point of the diode and the input filter capacitor CinpAnd CinnAre connected in series. Primary diode clamping mixed three-level full bridge H1Is passed through a high-frequency inductor LsIs connected with the primary side of the high-frequency isolation transformer. The secondary single-phase full bridge H2The positive pole of the direct current bus, the positive pole of the corresponding direct current load and the output filter capacitor CoThe positive electrodes of (a) and (b) are connected. Secondary single-phase full bridge H2The negative pole of the DC bus, the negative pole of the corresponding DC load and the output filter capacitor CoAre connected with each other. Secondary single-phase full bridge H2The alternating current side of the transformer is connected with the secondary side of the high-frequency isolation transformer, the transformation ratio of the high-frequency isolation transformer is N:1, and N is a preset value. The input DC voltage of the diode clamping mixed three-level DAB converter is vin. Output voltage of diode clamping mixed three-level DAB converter is vout。
The fully-controlled switching device is S
1~S
6And a fully-controlled switching device S
1~S
4May have a 0 level and ± v
inOne or more of the levels. Under the action of such control signals, the primary diode clamp mixes the three-level full bridge H
1Ac port voltage v
pFive levels can be generated: v + v
in、
And 0, the secondary single-phase full bridge H
2Ac port voltage v
sThree levels can be generated: v + v
outAnd 0. The timing diagram of a diode clamp hybrid three-level DAB converter is shown in figure 2. The fully-controlled switching device is S
1~S
6And a fully-controlled switching device S
1~S
4When the control signal is high (e.g. v)
inLevel) and off when low (e.g., 0 level). Under the condition that the full-control switching devices S1, S2 and S6 are switched on, the output voltage of the primary side diode clamping mixed three-level full bridge H1 is + v
in. In the case of fully-controlled switching devices S1, S2, S5 being turned on simultaneously, or at allUnder the condition that the control switch devices S3, S4 and S6 are simultaneously turned on, the output voltage of the primary side diode clamping mixed three-level full bridge H1 is 0.
Figure 3 shows a flow diagram of a control method for a diode clamp hybrid three level DAB converter according to an embodiment of the present invention. As shown in fig. 3, an embodiment of the present invention provides a control method for a diode clamp hybrid three-level DAB converter. The method may be performed by a control apparatus, which may include a sampling unit, an adaptive controller, and a modulation unit. The method may include steps S310 to S350.
In step S310, the current i of the high frequency inductor of the diode clamped hybrid three-level DAB converter is measuredLInput voltage vinAnd an output voltage vout。
Step S310 may be performed by a sampling unit. The sampling unit may comprise 3 signal inputs, the 3 signal inputs respectively measuring the high frequency inductive current iLInput voltage vinAnd an output voltage vout. Measuring high-frequency inductive current iLInput voltage vinAnd an output voltage voutAfter that, normalization processing may be performed on the three parameters, respectively.
In step S320, according to the input voltage vinThe output voltage voutAnd calculating a voltage transmission ratio M according to the transformation ratio N of the high-frequency isolation transformer.
The voltage transfer ratio M may be specifically calculated according to the following formula:
the transformation ratio N of the high-frequency isolation transformer is preset as an initial value, and the value range of M is more than or equal to 0 and less than 1.
In step S330, according to the output voltage voutAnd calculating the adaptive controller output x by the adaptive controller parameters.
Specifically, the adaptive controller output x may be calculated according to the following formula:
wherein, ω issFor switching frequency, omegas2 pi/T, wherein T is a preset switching period; λ, kpAnd kiThe adaptive controller parameters are preset. Lambda is a load factor used for reflecting the current load condition and satisfies 0<λ<0.1. Is a load differential factor for judging the trend of load change in advance, and satisfies 0<<0.01。kpK is more than or equal to 0.1p≤5,kiK is not less than 0.001i≤1;vrefIs a reference voltage; t is time; x is in the range of [0,1-2M]。
The manner in which the adaptive controller output x is calculated may not be limited to using equation (2) above. In an alternative case, the values of the first two terms in equation (2) are negligible due to their very small size, and only the last two terms are used to calculate the adaptive controller output x.
In step S340, according to the input voltage vinThe output voltage voutCurrent i of the high-frequency inductorLCalculating a capacitance charge allowance factor by using the transformation ratio N of the high-frequency isolation transformer1,a;
Capacitance charge margin factor1,aCan reflect the tracking load condition. Specifically, the capacitance charge margin factor of the zero voltage turn-on ZVS can be calculated according to the following formula1,a:
Where t represents time.
In step S350, the adaptive controller output x, the capacitance charge margin factor are calculated according to the voltage transfer ratio M1,aAnd determining a shift control amount.
The shift control amount may include four shift control amounts, D respectivelyp0,zvzc、Dp1,zvzc、Ds0,zvzc、Dss,zvzc。
At a voltage transmission ratio M of
In the case of (2), the shift control amount is calculated according to the following equation:
at a voltage transmission ratio M of
In the case of (2), the shift control amount is calculated according to the following equation:
steps S320 to S350 may be performed by an adaptive controller.
In step S360, the fully-controlled switching device S is driven according to the shift control quantity1~S6And a fully-controlled switching device Q1~Q4。
Step S360 may be performed by the modulation unit of the control device. Primary diode clamping mixed three-level full bridge H1Is controlled by the switching device S1~S6Input end of control signal and secondary single-phase full bridge H2Is controlled by the full-scale switching device Q1~Q4The input end of the control signal is connected with the output end corresponding to the modulation unit so as to receive the control signal.
By the four shift control variables, the modulation method of zero voltage switching-on ZVS and zero current switching-off ZCS can be realized with four degrees of freedom, and the control mode with the minimum current effective value can be realized.
In particular, the fully-controlled switching device S can be controlled1Has an ON time of 0 and an OFF time of (D)p0,zvzc+Dp1,zvzc) T and controls a fully controlled switching device S3And all areControl switch device S1And (4) complementary operation. Controlling a fully-controlled switching device S4Has an on time of T and an off time of (1+ D)p0,zvzc+Dp1,zvzc) T and controls a fully controlled switching device S2And a fully-controlled switching device S4And (4) complementary operation. Controlling a fully-controlled switching device S6Has a turn-on time of Dp0,zvzcT, turn-off time is (1+ D)p0,zvzc) T and controls a fully controlled switching device S5And a fully-controlled switching device S6And (4) complementary operation. Controlling a fully-controlled switching device Q1Has a turn-on time of Dss,zvzcT, turn-off time is (1+ D)ss,zvzc) T and controls the fully-controlled switching device Q2And a fully-controlled switching device Q1Performing complementary work; and controlling the fully-controlled switching device Q3Has an on time of (D)s0,zvzc+Dss,zvzc) T, turn-off time is (D)s0,zvzc+Dss,zvzc+1) T and controls the fully controlled switching device Q4And a fully-controlled switching device Q3And complementary operation, wherein T is a preset switching period. The two fully-controlled switching devices work complementarily, namely that when one fully-controlled switching device is switched on, the other fully-controlled switching device is switched off, and vice versa. As shown in fig. 2, the fully-controlled switching device may be set to be turned on when the input control signal of the fully-controlled switching device is at a high level, and may be set to be turned off when the input control signal of the fully-controlled switching device is at a low level. The high level of the control signal may be vinThe low level of the control signal may be a 0 level.
The above-described control of the fully-controlled switching device may occur within a 2T time.
By introducing a capacitance charge allowance factor, the self-adaptive load tracking condition is realized, so that the current effective value and the current stress of the diode clamping hybrid three-level DAB converter can be effectively reduced, zero-voltage switching-on of a high-voltage side and heavy-current zero-current switching-off of a low-voltage side are realized, the switching loss and the switching-on loss are finally reduced, and the efficiency of direct-current voltage conversion of the energy router is improved.
In a further alternative embodiment, each of the four phase shift control amounts calculated based on the four phase shift control amounts may be fully controlledThe duty cycle of the control signal to the off device is defined. For example, D can be usedp0,zvzcControl primary side diode clamping mixed three-level full bridge H10 level of (1); use of Dp1,zvzcControl primary side diode clamping mixed three-level full bridge H1V ofinA level; use of Ds0,zvzcControl secondary single-phase full bridge H20 level of (1); use of Dss,zvzcControl primary side diode clamping mixed three-level full bridge H1And secondary single-phase full bridge H2Relative phase shift of.
Specifically, the primary diode clamp hybrid three-level full bridge H can be implemented1Control signal + -v of each fully-controlled switching deviceinDuty ratio of level is set to Dp1,zvzc. Clamping the primary diode to mix with a three-level full bridge H1The duty ratio of the control signal 0 level of each full-control switching device is set to be Dp0,zvzc. The secondary side is connected with a single-phase full bridge H2The duty ratio of the control signal 0 level of each full-control switching device is set to be Ds0,zvzc. Clamping the primary diode to mix with a three-level full bridge H1And the secondary single-phase full bridge H2Relative phase shift ratio therebetween is set to Dss,zvzc。
As shown in fig. 2, the primary diode clamp hybrid three-level full bridge H1Each full-control switching device S1~S6The duty ratio of the level of the control signal(s) is set to be the same, but the timing charts of the respective control signals may be different. Similarly, a secondary single-phase full bridge H2Each full-control switching device Q1~Q4The duty ratio of the level of the control signal(s) is set to be the same, but the timing charts of the respective control signals may be different. The timing diagram may be specifically defined according to the above setting of the on-time and the off-time of each fully-controlled switching device.
Based on the above control process, D can be adjustedp0,zvzcDefined as a primary diode clamped hybrid three-level full bridge H1Duty ratio of 0 level of; will Dp1,zvzcDefined as a primary diode clamped hybrid three-level full bridge H1V ofinDuty ratio of level(ii) a Will Ds0,zvzcDefined as secondary single-phase full bridge H2Duty ratio of 0 level of; will Dss,zvzcDefined as a primary diode clamped hybrid three-level full bridge H1And secondary single-phase full bridge H2Relative shift phase therebetween.
In a further alternative embodiment, to realize zero-voltage turn-on ZVS on the high-voltage side and zero-current turn-off ZCS on the high-voltage side, the four calculated shift control variables may be further defined. Specifically, if the calculated shift control quantity satisfies the following formula, zero-voltage switching-on ZVS on the high-voltage side and zero-current switching-off ZCS on the high-voltage side can be realized, and the loss is minimum:
0<Dss,zvzc<Dss,zvzc+Ds0,zvzc<Dp0,zvzc<Dp0,zvzc+Dp1,zvzc<1 (6)
and expanding, if the calculated shift control amount does not satisfy the formula (6), the shift control amount can be adjusted, for example, increased or decreased by a certain adjustment factor, so that the shift control amount satisfies the formula (6).
In fact, when the calculated shift control amounts do not satisfy the formula (6), the technical effect of minimizing the effective value of the high-frequency inductor current and minimizing the loss can be achieved. Therefore, if the technical effects of minimizing the effective value of the high-frequency inductor current and minimizing the loss are to be achieved, the calculated shift control amounts can be adjusted to not satisfy the formula (6).
Fig. 4 and 5 show the inductance current effective value I when M is 0.4 and 0.6, respectively2n,rmsAnd Dss(i.e., relative shift ratio D)ss,zvzc) The relationship of (1). FIGS. 4 and 5 are schematic diagrams of simulation, i.e. effective value of inductive current2n,rmsAnd is the current i of the high frequency inductorL. From fig. 4 and 5, it can be seen that the conduction loss of the diode clamp hybrid three-level DAB converter is compared with the relative shift Dss,zvzcIncreasing, monotonically increasing.
The embodiment of the invention further provides an energy router, and the direct-current port of the energy router can adopt the diode clamping hybrid three-level DAB converter controlled by the control method for the diode clamping hybrid three-level DAB converter in any embodiment of the invention. FIG. 6 shows a schematic diagram of an energy router. As shown in fig. 6, the energy router includes: the input high-voltage alternating current port is connected with a power grid; the output 4 low-voltage direct current ports (direct current port 1, direct current port 2, direct current port 3, direct current port 4), 1 low-voltage alternating current port and the communication port, the power of the direct current port and the alternating current port flows bidirectionally, the direct current port adopts the diode clamping mixed three-level DAB converter controlled by the control method for the diode clamping mixed three-level DAB converter, which is disclosed by any embodiment of the invention, and the efficiency of power transmission of the direct current port of the energy router can be obviously improved.
Fig. 7 shows a block diagram of a control apparatus for a diode clamp hybrid three-level DAB converter according to an embodiment of the present invention. As shown in fig. 7, an embodiment of the present invention further provides a control apparatus for a diode clamp hybrid three-level DAB converter, which may include a sampling unit 710, an adaptive controller 720, and a modulation unit 730.
The sampling unit 710 may be used to measure the current i of the high frequency inductor of the diode clamped hybrid three-level DAB converterLInput voltage vinAnd an output voltage vout. The adaptive controller 720 may be configured to: according to said input voltage vinThe output voltage voutAnd calculating a voltage transmission ratio M according to the transformation ratio N of the high-frequency isolation transformer; according to the output voltage voutCalculating adaptive controller output x by using adaptive controller parameters; according to said input voltage vinThe output voltage voutCurrent i of the high-frequency inductorLCalculating a capacitance charge allowance factor by using the transformation ratio N of the high-frequency isolation transformer1,a(ii) a And according to the voltage transfer ratio M, the adaptive controller output x, and the capacitance charge margin factor1,aAnd determining a shift control amount. The modulation unit 730 may be configured to drive the fully-controlled switching device S according to the shift control amount1~S6And a fully-controlled switching device Q1~Q4。
Specifically, adaptive controller 720 may calculate voltage transfer ratio M according to equation (1), adaptive controller output x according to equation (2), and capacitance charge margin factor according to equation (3)1,a. Four phase-shifting control quantities D are calculated according to the formulas (4) to (5)p0,zvzc、Dp1,zvzc、Ds0,zvzcAnd Dss,zvzc. The modulation unit 730 drives the corresponding fully-controlled switching device S1~S6、Q1~Q4And the action of each full-control switch device is controlled, so that the optimized operation is realized.
The specific operation principle and benefits of the control apparatus for the diode clamping hybrid three-level DAB converter according to the embodiment of the present invention are the same as those of the control method for the diode clamping hybrid three-level DAB converter according to the above embodiment of the present invention, and will not be described herein again.
The control method and the device for the diode clamping hybrid three-level DAB converter have the following beneficial effects that:
(1) the hybrid three-level DAB converter based on diode clamping performs control, which can reduce the number of semiconductor devices, reduce cost, and enhance reliability of the energy router compared to a full three-level based scheme.
(2) Compared with a two-level scheme, the hybrid three-level scheme greatly widens the input range of the direct-current voltage.
(3) By introducing a capacitance charge margin factor, the self-adaptive tracking of the load condition is realized.
(4) And calculating four shift control variables by considering multi-objective optimization of zero-voltage switching-on ZVS of the primary high-voltage device, zero-current switching-off ZCS of the secondary high-current device and integral conduction loss of the converter. The loss of DC-DC voltage conversion can be finally reduced, the zero-voltage conduction ZVC at the high-voltage side and the zero-current turn-off ZVC at the low-voltage side with large current in the direct-current voltage conversion are realized, the switching loss is greatly reduced, the current effective value is reduced, the switching work efficiency is improved, and the power transmission efficiency of the direct-current port of the energy router is remarkably improved.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In a typical configuration, a computing device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory.
The memory may include forms of volatile memory in a computer readable medium, Random Access Memory (RAM) and/or non-volatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). The memory is an example of a computer-readable medium.
Computer-readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
The above are merely examples of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.