CN112185804A - Structure of inorganic molecular crystal packaging two-dimensional material and packaging and de-packaging method thereof - Google Patents
Structure of inorganic molecular crystal packaging two-dimensional material and packaging and de-packaging method thereof Download PDFInfo
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- CN112185804A CN112185804A CN202011003478.1A CN202011003478A CN112185804A CN 112185804 A CN112185804 A CN 112185804A CN 202011003478 A CN202011003478 A CN 202011003478A CN 112185804 A CN112185804 A CN 112185804A
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Abstract
The invention belongs to the field of nano materials, and particularly relates to a structure for packaging a two-dimensional material by using an inorganic molecular crystal and a packaging and decapsulating method thereof. The packaging method comprises the following steps: (1) sublimating the inorganic molecular crystal to form a gaseous inorganic molecular atmosphere; (2) and depositing gaseous inorganic molecules on the surface of the two-dimensional material to form a protective layer. According to the invention, an inorganic molecular crystal material is used as a sublimation source, the inorganic molecular crystal material can be sublimated at a lower temperature in a high vacuum environment due to a weaker acting force between the molecular crystals, the inorganic molecular crystal material is deposited on the surface of the two-dimensional material for packaging, the obtained packaging layer is connected with the two-dimensional material through Van der Waals force, the change of the surface chemical state of the two-dimensional material is avoided, the nondestructive packaging of the two-dimensional material can be realized, the large-scale preparation and the device integration are easy to realize, the performance of the inorganic molecular crystal is fully utilized, the packaging of different two-dimensional materials can be realized, and the.
Description
Technical Field
The invention belongs to the field of nano materials, and particularly relates to a structure for packaging a two-dimensional material by using an inorganic molecular crystal and a packaging and decapsulating method thereof.
Background
The two-dimensional material has a series of unique physicochemical properties such as ultrahigh mobility, enhanced optical interaction, mechanical flexibility and the like, is considered to be one of the material bases of the most potential advanced optoelectronic devices, and greatly attracts the interest of researchers. However, when a dimension of a material is reduced to an atomic level, as the surface proportion is significantly increased, the stability of the material will be strongly influenced by the chemical state of the surface and its interaction with molecules in the environment. Therefore, more two-dimensional materials will be degraded and fail in the atmospheric environment, and the current research on two-dimensional materials is mainly focused on a few two-dimensional materials with stronger stability and chemical inertness.
Encapsulating the exposed surface of a two-dimensional material is an effective strategy to overcome its instability in atmospheric environments. The packaging methods reported at present mainly include: the method comprises the steps of obtaining an oxide layer by using atomic layer deposition, coating a high polymer material, and transferring stable two-dimensional materials such as boron nitride and graphene to the surface of the two-dimensional material to be protected. However, the above methods have the disadvantages of changing the original chemical state of the two-dimensional material, poor stability, much residual pollution, complex operation and difficulty in realizing scale production. Meanwhile, the method cannot effectively realize the decapsulation process after encapsulation so as to obtain the original pure two-dimensional material.
In order to effectively and conveniently realize excellent protection effect on a two-dimensional material. The encapsulation strategy used is required to meet the following requirements: the preparation method is simple, universal and easy to scale; damage to the two-dimensional material is avoided; the decapsulation process may be implemented to facilitate exploring the properties of the original two-dimensional material. Developing a packaging and corresponding decapsulation method meeting the above requirements is of great significance in expanding the research range of two-dimensional materials, enriching the material system in the two-dimensional field, widening the working conditions of the two-dimensional materials, researching the intrinsic properties of the two-dimensional materials, and the like.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method which uses an inorganic molecular crystal material as a sublimation source, deposits the inorganic molecular crystal material on the surface of a two-dimensional material for packaging, and connects an obtained packaging layer with the two-dimensional material through Van der Waals force, thereby realizing the nondestructive packaging of the two-dimensional material. The detailed technical scheme of the invention is as follows.
To achieve the above object, according to one aspect of the present invention, there is provided a method for encapsulating a two-dimensional material, comprising the steps of:
(1) sublimating the inorganic molecular crystal to form a gaseous inorganic molecular atmosphere;
(2) depositing gaseous inorganic molecules on the surface of the two-dimensional material to form an inorganic molecule crystal protective layer.
The inorganic molecular crystal takes molecular clusters as basic composition units, and the molecular clusters are connected with each other by weak van der Waals force, so that deposition and sublimation are realized at low temperature under a low-pressure environment, and the damage to the surface physical and chemical states of a two-dimensional material is avoided.
Preferably, the inorganic molecule comprises Sb2O3、S8、P4Se3、GeI4One kind of (1).
Preferably, the two-dimensional material is graphene or MoS2、WSe2、TaS2One kind of (1).
Preferably, the sublimation pressure of the inorganic molecular crystal in the step (1) is 10-6-1Torr。
Preferably, the deposition temperature in step (2) is 600 ℃ or less, preferably 200-600 ℃.
Preferably, the encapsulation method achieves sublimation and deposition by a vacuum heating apparatus.
Preferably, the vacuum heating equipment is a vacuum coating machine, and the vacuum coating machine can control the deposition rate and the deposition time.
According to another aspect of the present invention, there is provided a structure of an inorganic molecular crystal encapsulating two-dimensional material, prepared according to the encapsulating method described above.
According to another aspect of the present invention, there is provided a method for decapsulating two-dimensional material encapsulated by inorganic molecular crystal, wherein the structure encapsulated by the encapsulation method is heated in vacuum to sublimate the protection layer until no residue is left on the surface of the two-dimensional material. The two-dimensional material after being packaged in the invention can realize a nondestructive unsealing process by heating to overcome Van der Waals acting force in a low-pressure environment, and the two-dimensional material after being unsealed keeps consistent with the physical and chemical state before being packaged.
Preferably, the decapsulation temperature is 600 ℃ or lower, preferably 200--6-1Torr。
The invention has the following beneficial effects:
(1) according to the invention, an inorganic molecular crystal material is used as a sublimation source, due to weak acting force between molecular crystals, the inorganic molecular crystal material can be sublimated at a lower temperature in a high vacuum environment, the inorganic molecular crystal material is deposited on the surface of the two-dimensional material for packaging, the obtained packaging layer is connected with the two-dimensional material through Van der Waals force, the change of the surface chemical state of the two-dimensional material is avoided, and the nondestructive packaging of the two-dimensional material can be realized;
(2) the packaging method can be accurately controlled, a complete and compact packaging layer is formed on the surface of the two-dimensional material, the processing technology is simple, the absorbed energy in the reaction process is low, and the surface of the two-dimensional material is prevented from being damaged;
(3) the two-dimensional material after being packaged can realize a nondestructive decapsulation process by heating to overcome van der Waals acting force in a low-pressure environment, the two-dimensional material after being decapsulated is consistent with the physical and chemical state before being packaged, the intermolecular acting force between the molecular crystal and the two-dimensional material is weak, no residual pollution can be realized after decapsulation, and the two-dimensional material is restored to the physical and chemical state before being packaged;
(4) the packaging method is easy to realize large-scale preparation and device integration, fully utilizes the performance of the inorganic molecular crystal, can realize packaging of different two-dimensional materials, and has universality and wide market prospect.
Drawings
FIG. 1 shows that Sb is encapsulated on the surface of graphene by thermal evaporation in example 12O3Schematic representation of the protective layer.
FIG. 2 shows Sb in example 12O3Schematic illustration of protective layer decapsulation.
FIG. 3 is a graph of example 1 in which Sb was vapor-deposited on graphene to a thickness of 20nm2O3Atomic force microscopy of thin films.
Fig. 4 is an optical microscope photograph of the graphene morphology prepared by mechanical exfoliation in example 1.
FIG. 5 is a graph showing the deposition of Sb having a thickness of 20nm on the surface of graphene in example 12O3Optical microscope photograph of the post-film morphology.
Fig. 6 is an atomic force microscope photograph of graphene prepared by mechanical exfoliation in example 1.
FIG. 7 is a graph obtained by vapor depositing Sb with a thickness of 20nm on the surface of graphene in example 12O3Atomic force microscopy of the morphology behind the film.
FIG. 8 shows Sb in example 12O3And (3) an atomic force microscope photo of the shape of the graphene subjected to the decapsulation.
FIG. 9 shows the graphene coated with Sb in example 12O3And Raman spectrograms of the film after encapsulation and decapsulation.
FIG. 10 is a MoS prepared by mechanical stripping as in example 22Optical microscope photograph of the morphology.
FIG. 11 shows MoS in example 22Sb with the surface evaporation thickness of 20nm2O3Optical microscope photograph of the post-film morphology.
FIG. 12 shows Sb in example 22O3Film-encapsulated MoS2And (4) taking a microscope picture of the shape after decapsulation.
FIG. 13 is a WSe prepared by mechanical exfoliation in example 32Optical microscope photograph of the morphology.
FIG. 14 shows WSe in example 32Sb with the surface evaporation thickness of 20nm2O3Optical microscope photograph of the post-film morphology.
FIG. 15 shows Sb in example 32O3Film encapsulated WSe2And (4) an optical microscope photo of the appearance after decapsulation.
FIG. 16 is TaS prepared by mechanical stripping in example 42Optical microscope photograph of the morphology.
FIG. 17 shows WSe in example 42Sb with the surface evaporation thickness of 20nm2O3Optical microscope photograph of the post-film morphology.
FIG. 18 shows Sb in example 42O3TaS packaged by thin film2And (4) an optical microscope photo of the appearance after decapsulation.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1Sb2O3As inorganic molecules, encapsulating and de-encapsulating on graphene surface
Sb2O3As shown in fig. 1, the method for encapsulating graphene encapsulated with inorganic molecules includes the following steps:
(1) sb is coated by a high vacuum coating machine2O3Sublimating to form gaseous inorganic molecule atmosphere, maintaining vacuum state during reaction, and maintaining reaction pressure at 10-6Torr, the sublimation temperature was 300 ℃ and the deposition temperature was 25 ℃.
(2) Depositing gaseous inorganic molecules on the surface of graphene to form a protective layer, wherein the graphene is mechanically stripped to SiO2On a Si substrate, the deposition rate is controlled to
The deposition time is set to 1000s, and 20nm Sb is obtained after the evaporation2O3Graphene covered by a thin film.
Feeding the packaged graphene into a reactorDecapsulated, as shown in FIG. 2, to be Sb2O3The thin film encapsulated graphene is placed in a horizontal quartz tube. Before the reaction, the reaction was preliminarily evacuated to about 0.1Torr, then Ar gas was purged to atmospheric pressure, and the purging was repeated at least 3 times to discharge air. And then when the pressure of the whole chamber is reduced to 0.1Torr, closing the quartz tube, starting heating, raising the temperature to 300 ℃ at the temperature rise rate of 10 ℃/min, and preserving the temperature for 30 minutes until no residue exists on the surface of the two-dimensional material. After the reaction is finished, the furnace is moved to rapidly cool the quartz tube and the sample, and then the sample is taken out.
Examples 2-4 were the same as example 1, with the main difference being that the two-dimensional material was different, wherein example 2 selects MoS prepared by mechanical stripping2Example 3 selection of WSe prepared by mechanical stripping as two-dimensional Material to be Encapsulated2Example 4 selection of TaS prepared by mechanical stripping as the two-dimensional Material to be Encapsulated2As an encapsulated two-dimensional material.
Examples 5-6 were the same as example 1 except that the inorganic molecular crystal was different, wherein example 5 was S8Example 6 is P4Se3Example 7 is GeI4. Examples 8-9 were the same as example 1, except that the deposition rate and deposition thickness of thermal evaporation were different. The main parameter tables of examples 1to 9 of the present invention are shown in Table 1.
Table 1 table of parameters of examples
Test and result discussion.
Sb coated on the surface of graphene in example 1 was subjected to atomic force microscopy2O3The film was subjected to surface topography characterization and the results are shown in FIG. 3. The results show that Sb evaporated onto the surface of the two-dimensional material2O3The film surface is compact, flat and uniform, and has a protection effect.
The surface morphology of the graphene before and after encapsulation in example 1 was characterized by an optical microscope, and the results are shown inFig. 4 and 5. The comparison shows that after the morphology of the graphene is kept consistent before and after packaging, no obvious damage exists, the color change of the substrate and the surface of the graphene is obvious and uniform, and the result shows that the evaporated Sb is2O3The film has uniform thickness and complete surface.
The morphology of the graphene surface before and after encapsulation in example 1 was characterized by an atomic force microscope, and the results are shown in fig. 6 and 7. The comparison shows that the graphene surface does not change significantly before and after packaging, which indicates that the graphene surface is not damaged in the packaging process, wherein the reason why the surface in fig. 7 is granular is that Sb is packaged2O3The surface roughness of the back graphene is slightly increased.
The morphology of the decapsulated graphene surface in example 1 was characterized by an atomic force microscope, and the results are shown in fig. 8. Compared with fig. 6, it can be seen that the morphology characteristics of the graphene before encapsulation are consistent, which indicates that no damage is caused to the surface of the graphene during the decapsulation process, and compared with fig. 7, the disappearance of the granular characteristics indicates Sb on the surface2O3The encapsulation layer is removed.
Respectively packaging Sb by using Raman spectrometer2O3The graphene of the film was tested with the decapsulated graphene, and the results are shown in fig. 9. The results show that in the encapsulated state, the sample has Sb at the same time2O3And the characteristic raman peak position of graphene. After decapsulation, the sample had only the characteristic raman peak position of graphene, whereas Sb2O3The characteristic raman peak position of (a) disappears. Showing that the decapsulation operation can effectively eliminate Sb on the surface of the graphene2O3And the thin film enables the packaged graphene to be restored to the state before packaging.
The MoS before, after and after encapsulation in example 2 was examined by light microscopy2Surface topography characterization was performed and the results are shown in fig. 10, 11 and 12. Results show MoS2The morphology of the film does not change obviously, which indicates that the MoS is not subjected to the encapsulation process and the decapsulation process2Causing damage. Wherein MoS is due to post-packaging2Uniformly and integrally covered with Sb on the surface of the substrate2O3Film, the color of the surface of the sample changes significantly over the entire field of view. Sb after decapsulation2O3Film sublimation, MoS2The appearance of the morphology characteristics is consistent with that before packaging.
WSe before encapsulation, after encapsulation and after decapsulation in example 3 were performed using an optical microscope2Surface topography characterization was performed and the results are shown in fig. 13, 14 and 15. Results display WSe2The morphology of the film does not change obviously, which indicates that the WSe is not subjected to the encapsulation process and the decapsulation process2Causing damage. Wherein due to post-encapsulation WSe2Uniformly and integrally covered with Sb on the surface of the substrate2O3Film, the surface color of the sample changes significantly over the field of view. Sb after decapsulation2O3Film sublimation, WSe2The appearance of the morphology characteristics is consistent with that before packaging.
The TaS before, after and after encapsulation in example 2 was subjected to light microscopy2Surface topography characterization was performed and the results are shown in fig. 16, 17 and 18. Results show MoS2The morphology of (A) does not change significantly, indicating that neither the encapsulation nor the decapsulation processes are for TaS2Causing damage. Wherein due to the encapsulated TaS2Uniformly and integrally covered with Sb on the surface of the substrate2O3Film, the surface color of the sample changes significantly over the field of view. Sb after decapsulation2O3Film sublimation, TaS2The appearance of the morphology characteristics is consistent with that before packaging.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A method of encapsulating a two-dimensional material, comprising the steps of:
(1) sublimating the inorganic molecular crystal to form a gaseous inorganic molecular atmosphere;
(2) depositing gaseous inorganic molecules on the surface of the two-dimensional material to form an inorganic molecule crystal protective layer.
2. The encapsulation method according to claim 1, wherein the inorganic molecules comprise Sb2O3、S8、P4Se3、GeI4One kind of (1).
3. The encapsulation method according to claim 1 or 2, wherein the two-dimensional material comprises graphene, MoS2、WSe2、TaS2One kind of (1).
4. The encapsulation method according to claim 2, wherein the sublimation pressure of the inorganic molecular crystal in the step (1) is 10-6-1Torr。
5. The encapsulation method according to claim 1, wherein the deposition temperature in step (2) is 600 ℃ or lower, preferably 200-600 ℃.
6. The encapsulation method according to claim 1, wherein the encapsulation method achieves sublimation and deposition by a vacuum heating apparatus.
7. The method of claim 6 wherein the vacuum heating apparatus is a vacuum coater, the vacuum coater being capable of controlling the deposition rate and deposition time.
8. A structure of an inorganic molecular crystal encapsulating two-dimensional material, characterized in that it is prepared according to the encapsulating method of any one of claims 1to 7.
9. A method for decapsulating a two-dimensional material, wherein the structure encapsulated by the encapsulation method according to any one of claims 1to 7 is heated in a vacuum to sublimate the protective layer until no residue remains on the surface of the two-dimensional material.
10. According toThe decapsulation method according to claim 9, wherein the decapsulation temperature is 600 ℃ or lower, preferably 200 ℃ and 600 ℃, and the decapsulation pressure is 10-6-1Torr。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114314659A (en) * | 2021-12-30 | 2022-04-12 | 华中科技大学 | Two-dimensional inorganic molecular crystal Sb2O3Nano material, preparation method and application |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018100194A (en) * | 2016-12-20 | 2018-06-28 | 国立大学法人 名古屋工業大学 | Graphene with grown metal chalcogenide layer and method for producing the same |
| CN109629004A (en) * | 2019-01-09 | 2019-04-16 | 湖南大学 | The method that Van der Waals is epitaxially formed the thin transition metal tellurides two-dimensional metallic material of atom level in no dangling bonds substrate |
| CN110284191A (en) * | 2019-07-26 | 2019-09-27 | 华中科技大学 | A kind of Two-dimensional Inorganic molecular crystal material and preparation method thereof |
| CN111621746A (en) * | 2020-05-29 | 2020-09-04 | 华中科技大学 | Van der Waals dielectric material and preparation method and application thereof |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018100194A (en) * | 2016-12-20 | 2018-06-28 | 国立大学法人 名古屋工業大学 | Graphene with grown metal chalcogenide layer and method for producing the same |
| CN109629004A (en) * | 2019-01-09 | 2019-04-16 | 湖南大学 | The method that Van der Waals is epitaxially formed the thin transition metal tellurides two-dimensional metallic material of atom level in no dangling bonds substrate |
| CN110284191A (en) * | 2019-07-26 | 2019-09-27 | 华中科技大学 | A kind of Two-dimensional Inorganic molecular crystal material and preparation method thereof |
| CN111621746A (en) * | 2020-05-29 | 2020-09-04 | 华中科技大学 | Van der Waals dielectric material and preparation method and application thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114314659A (en) * | 2021-12-30 | 2022-04-12 | 华中科技大学 | Two-dimensional inorganic molecular crystal Sb2O3Nano material, preparation method and application |
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