CN112185470A - Data processing method - Google Patents
Data processing method Download PDFInfo
- Publication number
- CN112185470A CN112185470A CN202010978746.5A CN202010978746A CN112185470A CN 112185470 A CN112185470 A CN 112185470A CN 202010978746 A CN202010978746 A CN 202010978746A CN 112185470 A CN112185470 A CN 112185470A
- Authority
- CN
- China
- Prior art keywords
- data
- chemical bond
- film
- content
- data set
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 150
- 238000000862 absorption spectrum Methods 0.000 claims abstract description 72
- 238000005070 sampling Methods 0.000 claims abstract description 68
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- 238000012360 testing method Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 33
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000010998 test method Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 125
- 229910052581 Si3N4 Inorganic materials 0.000 description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 34
- 238000005259 measurement Methods 0.000 description 31
- 238000005102 attenuated total reflection Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 15
- 238000002835 absorbance Methods 0.000 description 11
- 238000000691 measurement method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C10/00—Computational theoretical chemistry, i.e. ICT specially adapted for theoretical aspects of quantum chemistry, molecular mechanics, molecular dynamics or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C60/00—Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
Landscapes
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computing Systems (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Bioinformatics & Cheminformatics (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Bioinformatics & Computational Biology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The embodiment of the invention provides a data processing method, which comprises the steps of measuring infrared absorption spectrums of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a first data set corresponding to a first chemical bond in the film samples; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the first data set using a first metrology formula; measuring the infrared absorption spectra of the plurality of film samples by using a second testing method adopting an infrared multiple attenuation total reflection mode for sampling to obtain a second data set corresponding to the first chemical bond; determining a degree of association of data in the first data set and data in the second data set; obtaining a second metering formula based on the correlation degree and the first metering formula; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the second data set in combination with the second metrology formula.
Description
Technical Field
The invention relates to the technical field of measurement, in particular to a data processing method.
Background
Each molecule has a unique infrared absorption spectrum determined by its composition and structure, from which molecules of a substance can be analyzed and identified, e.g., information on the bonding of molecules in the substance can be obtained. Specifically, a beam of infrared rays of different wavelengths is irradiated onto a molecule of a substance, and some infrared rays of specific wavelengths are absorbed to form an infrared absorption spectrum of the molecule. In practical application, the infrared absorption spectrum of the film to be sampled can be measured by an infrared transmission sampling mode and an infrared multiple attenuation total reflection sampling mode.
In the related technology, the infrared transmission sampling mode is mature, and after the infrared absorption spectrum of the film to be sampled is obtained by using the sampling mode, the content of the first chemical bond in the film to be sampled can be obtained according to a first metering formula. However, infrared multiple attenuated total reflection sampling is a newer sampling method, and a corresponding metering formula is not available for calculating the content of the first chemical bond in the film to be sampled.
Disclosure of Invention
In order to solve the related technical problems, embodiments of the present invention provide a data processing method, which can calculate the content of a first chemical bond in a film to be sampled when an infrared absorption spectrum of the film to be sampled is obtained by adopting a multiple attenuated total reflection sampling manner.
The technical scheme of the embodiment of the invention is realized as follows:
the embodiment of the invention provides a data processing method, which comprises the following steps:
measuring infrared absorption spectra of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a first data set corresponding to a first chemical bond in the film samples; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the first data set using a first metrology formula;
measuring the infrared absorption spectra of the plurality of film samples by using a second testing method adopting an infrared multiple attenuation total reflection mode for sampling to obtain a second data set corresponding to the first chemical bond;
determining a degree of association of data in the first data set and data in the second data set;
obtaining a second metering formula based on the correlation degree and the first metering formula; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the second data set in combination with the second metrology formula.
In the foregoing solution, determining an association relationship between data in the first data set and data in the second data set includes:
performing linear fitting on the data in the first data set and the data in the second data set to obtain a fitting coefficient;
obtaining a second metering formula based on the incidence relation and the first metering formula, wherein the obtaining of the second metering formula comprises:
and obtaining the second metering formula based on the fitting coefficient and the first metering formula.
In the foregoing solution, obtaining the second metering formula based on the fitting coefficient and the first metering formula includes:
and taking the product of the fitting coefficient and the first metering formula to obtain the second metering formula.
In the above scheme, the method further comprises:
measuring the infrared absorption spectrum of the first film by using a second testing method to obtain third data corresponding to the first chemical bond; the first film is the same material as the film sample;
and obtaining the content of the first chemical bond in the first film by utilizing the second metering formula based on the third data.
In the above scheme, the method further comprises:
determining a plurality of chemical bonds comprising a first element in the first film;
obtaining the content of each chemical bond in the plurality of chemical bonds based on a second metering formula corresponding to the content of each chemical bond in the plurality of chemical bonds;
and determining the content of the first element according to the content of each chemical bond.
In the above scheme, the method further comprises:
and respectively determining a second metering formula corresponding to the content of each chemical bond in the plurality of chemical bonds.
In the above scheme, the first test method of sampling by using infrared transmission mode is used to measure the infrared absorption spectra of a plurality of film samples, so as to obtain a first data set corresponding to a first chemical bond in the film samples; the method comprises the following steps:
measuring infrared absorption spectra of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a plurality of infrared absorption spectra corresponding to the plurality of film samples;
for each infrared absorption spectrum in the plurality of infrared absorption spectra, searching by using the characteristic absorption frequency corresponding to the first chemical bond to obtain first data corresponding to the first chemical bond in the corresponding infrared absorption spectrum; wherein the content of the first and second substances,
a plurality of first data corresponding to a first chemical bond in a plurality of infrared absorption spectra forms the first data set.
According to the data processing method provided by the embodiment of the invention, the infrared absorption spectra of a plurality of film samples are measured by using a first testing method for sampling in an infrared transmission mode, so that a first data set corresponding to a first chemical bond in the film samples is obtained; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the first data set using a first metrology formula; measuring the infrared absorption spectra of the plurality of film samples by using a second testing method adopting an infrared multiple attenuation total reflection mode for sampling to obtain a second data set corresponding to the first chemical bond; determining a degree of association of data in the first data set and data in the second data set; obtaining a second metering formula based on the correlation degree and the first metering formula; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the second data set in combination with the second metrology formula. In the embodiment of the invention, two different sampling modes are utilized to respectively acquire data of a plurality of film samples to obtain two groups of data sets, the correlation degree between the data in the two groups of data sets and the corresponding metering formula of the content of the first chemical bond when the infrared absorption spectrum of the film to be sampled is obtained in an infrared transmission mode are utilized to obtain the corresponding metering formula of the content of the first chemical bond when the infrared absorption spectrum of the film to be sampled is obtained in a multi-attenuation total reflection sampling mode. Therefore, the measurement scheme provided by the embodiment of the invention can obtain a metering formula for calculating the content of the first chemical bond in the film to be sampled when the infrared absorption spectrum of the film to be sampled is obtained by adopting multiple times of attenuated total reflection sampling.
Drawings
FIG. 1a is a graph illustrating the percentage of error between the content of [ Si-H ] covalent bonds calculated using metric equation (1) and the content of [ Si-H ] covalent bonds calculated using a baseline measurement method for a plurality of samples in accordance with an embodiment of the present invention;
FIG. 1b is a graph showing the percentage of error between the content of the [ N-H ] covalent bond calculated using metric equation (2) and the content of the [ N-H ] covalent bond calculated using a baseline measurement method for a plurality of samples in accordance with an embodiment of the present invention;
fig. 2 is a schematic flow chart illustrating an implementation of a data processing method according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a flow chart of an implementation of a data processing method according to an embodiment of the present invention;
FIG. 4a is a graph showing the fitting result of linear fitting 18 to Si-H data according to an embodiment of the present invention;
FIG. 4b is a graph showing the fitting result of linear fitting 18 to N-H data in example of the present invention.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present invention clearer, the following will describe specific technical solutions of the present invention in further detail with reference to the accompanying drawings in the embodiments of the present invention.
The thin film to be sampled in the embodiment of the present invention includes a thin film formed in a semiconductor device manufacturing process, the embodiment of the present invention does not limit a material of the thin film to be sampled, and a silicon nitride (SiN) thin film is exemplified in the following description.
Molecules in a substance can selectively absorb infrared rays of certain wavelengths, thereby generating the transition of vibrational and rotational energy levels of the molecules. Detecting the absorption of infrared ray can obtain the infrared absorption spectrum of the matter, so as to obtain the bonding information of the molecules in the matter. In the manufacturing process of the semiconductor device, the bonding information of the mesomolecule of the film to be sampled can be used as data support for adjusting each process parameter in the manufacturing process when the film to be sampled is manufactured.
For example, in the manufacturing process of semiconductor devices, a silicon nitride film is required to meet the requirement, and in some embodiments, the manufacturing process of the silicon nitride film may specifically be: using dichlorosilane (SiH)2Cl2) Gas and ammonia (NH)3) Under the reaction conditions of a certain temperature (such as 700 ℃ -800 ℃) and a certain air pressure, dichlorosilane reacts with ammonia gas to generate silicon nitride. By measuring the infrared absorption spectrum of the resulting silicon nitride film, [ Si-H ] can be obtained]Content of chemical bond, [ N-H ]]Content of chemical bond and [ Si-N]The content of chemical bonds. It can be understood that the silicon nitride films with different chemical bond contents exhibit different properties, and based on this, the process parameters such as the ratio of dichlorosilane gas to ammonia gas, temperature, pressure, etc. can be adjusted according to actual requirements to control [ Si-H]Content of chemical bond, [ N-H ]]Content of chemical bonds or [ Si-N]The content of chemical bonds is varied to obtain a silicon nitride film that meets the requirements.
In practical application, the infrared absorption spectrum of the film to be sampled can be measured by an infrared transmission sampling mode and an infrared multiple attenuation total reflection sampling mode. The infrared absorption spectrum of the film to be sampled is measured in an infrared transmission sampling mode. Still taking silicon nitride as an example, the currently accepted Method for quantitatively measuring the content of [ Si-H ] chemical bonds and the content of [ N-H ] chemical bonds in a silicon nitride film based on infrared absorption spectrum is based on Lanford and Rand Method published in 1978, in which the infrared absorption spectrum of a film to be sampled is measured by means of infrared transmission sampling, and the quantitative formula of the content of [ Si-H ] chemical bonds can be expressed as:
wherein the content of the first and second substances,
represents [ Si-H ] contained per cubic centimeter]The content of chemical bonds; peakhight indicates [ Si-H ] in infrared absorption spectrum of silicon nitride film]Peak to peak values of chemical bonds; thickness denotes the Thickness of the silicon nitride film.
Meanwhile, the quantitative formula of the content of [ N-H ] chemical bonds can be expressed as:
wherein the content of the first and second substances,
represents [ N-H ] contained in each cubic centimeter]The content of chemical bonds; peakhight indicates [ N-H ] in infrared absorption spectrum of silicon nitride film]Peak to peak values of chemical bonds; thickness denotes the Thickness of the silicon nitride film.
Further, the atomic percentage of H in [ Si-H ] can also be obtained by using the above metering formula (1):
wherein, at.% Hin [ Si-H ]]Represents H in [ Si-H]Atomic percent of (a);
represents [ Si-H ] contained per cubic centimeter]The content of chemical bonds; FilmDensity represents the atomic density of a silicon nitride film；[N-H]Is represented by [ N-H]The content of chemical bonds; [ Si-H ]]Is represented by [ Si-H]The content of chemical bonds.
Meanwhile, the atomic percentage of H in [ N-H ] can be obtained by utilizing the metering formula (2):
wherein, at.% Hin [ N-H]Represents H in [ N-H]Atomic percent of (a);
represents [ N-H ] contained in each cubic centimeter]The content of chemical bonds; FilmDensity represents the atomic density of the silicon nitride film; [ N-H ]]Is represented by [ N-H]The content of chemical bonds; [ Si-H ]]Is represented by [ Si-H]The content of chemical bonds.
It is understood that the content of H in the silicon nitride film can be obtained based on the metering formula (3) and the metering formula (4).
FIG. 1a shows the percentage of error in the content of [ Si-H ] covalent bonds calculated using the above-described measurement formula (1) for 7 samples, i.e., s-1 to s-7 silicon nitride films, from the content of [ Si-H ] covalent bonds obtained using the baseline measurement method. As can be seen from fig. 1a, the error is within ± 5%. FIG. 1b shows the error in the percentage of the content of [ N-H ] covalent bonds calculated using the above-described measurement formula (2) for 7 samples, i.e., s-1 to s-7 silicon nitride films, to the content of [ N-H ] covalent bonds obtained using the standard measurement method. It can be seen from FIG. 1b that the error is also within 10%. The reference measurement Method is understood here to mean a measurement Method with a high degree of accuracy, such as the NRA-RBS Method, which is recognized in the industry. Based on the above, the quantitative values of the contents of the [ Si-H ] covalent bonds and the [ N-H ] covalent bonds in the silicon nitride film calculated by the measurement formula (1) and the measurement formula (2) have a certain accuracy, and can be used as data support in practical application.
In practical application, the principle of infrared transmission sampling includes that infrared incident light directly penetrates through a film to be sampled (after coming out of the film to be sampled, the infrared incident light is called emergent light) and enters an infrared light receiving sub-device. The transmission sampling mode is simple to realize, but according to the Lambert beer law:
A＝lg(1/T)＝Kab (5)
wherein A is absorbance; t is the transmittance (also known as transmittance), which is the intensity (I) of the emitted lightt) Specific intensity of incident light (I)o) (ii) a K is the molar absorption coefficient (which is related to the nature of the absorbing species and the wavelength λ of the incident light); c is the concentration of the light absorbing species; b is the thickness of the absorbing layer (i.e. the thickness of the film to be sampled).
As can be seen from equation (5): when the thickness of the absorption layer (i.e. the thickness of the film to be sampled) is small, the optical path is short (the light absorbed by the film to be sampled is less), so that the sampling signal of the film to be sampled with a thin film thickness will be very weak, i.e. the infrared transmission sampling accessory cannot detect the sampling signal of the film to be sampled with a thin film thickness or the detected sampling signal is weak. Based on this, the infrared transmission sampling method is not suitable for thin films (e.g., films with thickness less than that of the film)
) In the measurement of the infrared absorption spectrum of (1), the information on the bonding of the mesomolecule in the thin film having a small thickness cannot be obtained.
The principle of implementing the infrared multiple attenuated total reflection sampling includes that infrared incident light enters an infrared light receiving sub-device after being subjected to multiple (such as 33) attenuated total reflections in a film to be sampled (after coming out of the film to be sampled, the infrared incident light is called as emergent light). In practical applications, the WafIR sampling accessory provided by Harrick (Rui spectral technology) can measure the infrared absorption spectrum of a thin film based on an infrared multiple attenuated total reflection sampling method, and is used as a horizontal accessory for analyzing chemical bonds and information of single-sided monomolecular films and other thin coatings of double-sided polished wafers. When a thin film with a thin film thickness is measured by an infrared multiple attenuation total reflection sampling mode, an infrared absorption spectrum with good signal-to-noise ratio can be acquired, but at present, a metering method for determining the chemical bond content in the thin film based on the result of the sampling mode does not exist.
Based on this, in each embodiment of the present invention, two different sampling manners are used to respectively collect data of a plurality of film samples, so as to obtain two sets of data sets, and a corresponding measurement formula of the content of the first chemical bond when the infrared absorption spectrum of the film to be sampled is obtained by using the correlation between the data in the two sets of data sets and the infrared transmission manner is used to obtain the infrared absorption spectrum of the film to be sampled is obtained by using the corresponding measurement formula of the content of the first chemical bond when the infrared absorption spectrum of the film to be sampled is obtained by using the multiple attenuated total reflection sampling manner. Therefore, the measurement scheme provided by the embodiment of the invention can obtain a metering formula for calculating the content of the first chemical bond in the film to be sampled when the infrared absorption spectrum of the film to be sampled is obtained by adopting multiple times of attenuated total reflection sampling.
An embodiment of the present invention provides a data processing method, and fig. 2 is a schematic flow chart illustrating an implementation of the data processing method according to the embodiment of the present invention. As shown in fig. 2, the method comprises the steps of:
step 201: measuring infrared absorption spectra of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a first data set corresponding to a first chemical bond in the film samples; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the first data set using a first metrology formula;
step 202: measuring the infrared absorption spectra of the plurality of film samples by using a second testing method adopting an infrared multiple attenuation total reflection mode for sampling to obtain a second data set corresponding to the first chemical bond;
step 203: determining a degree of association of data in the first data set and data in the second data set;
step 204: obtaining a second metering formula based on the correlation degree and the first metering formula; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the second data set in combination with the second metrology formula.
The principles of sampling in the infrared transmission mode and the infrared multiple attenuated total reflection mode are described above and will not be described herein again.
In step 201, the plurality of film samples may include a plurality of films having different information on the formation of a bond. The first measurement formula comprises a measurement formula which can quantitatively calculate the content of any chemical bond of the film by using the value of the infrared absorption spectrum after measuring the infrared absorption spectrum of the film by adopting an infrared transmission sampling mode, such as the measurement formula (1) and the measurement formula (2).
In some embodiments, the measuring of the infrared absorption spectra of a plurality of film samples by using a first testing method of sampling in an infrared transmission manner obtains a first data set corresponding to a first chemical bond in the film samples; the method comprises the following steps:
measuring infrared absorption spectra of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a plurality of infrared absorption spectra corresponding to the plurality of film samples;
for each infrared absorption spectrum in the plurality of infrared absorption spectra, searching by using the characteristic absorption frequency corresponding to the first chemical bond to obtain first data corresponding to the first chemical bond in the corresponding infrared absorption spectrum; wherein the content of the first and second substances,
a plurality of first data corresponding to a first chemical bond in a plurality of infrared absorption spectra forms the first data set.
Here, the first data may be indicative of absorbance or other measure having a similar meaning to absorbance corresponding to the first chemical bond in the film sample measured by way of infrared transmission sampling. In practical applications, the abscissa of the infrared absorption spectrum is frequency (wavelength of infrared light), and the ordinate is absorbance of a chemical bond (or group) in the film sample. Because the characteristic absorption frequencies corresponding to different chemical bonds in the film sample are different, the absorbance of the corresponding chemical bond can be obtained according to the characteristic absorption frequency after the infrared absorption spectrum is measured. The absorbance corresponding to each of the first chemical bonds in the plurality of thin film samples constitutes a first data set, which is a collection of absorbances.
In step 202, the second testing method that performs sampling by using an infrared multiple attenuated total reflection sampling method measures the infrared absorption spectra of the plurality of film samples, and a specific implementation manner of obtaining the second data set corresponding to the first chemical key is similar to that of obtaining the first data set in step 201, and only a used sampling manner is different. The second data may be indicative of absorbance or other measure having a similar meaning to absorbance corresponding to the first chemical bond in the film sample measured using a multiple attenuated total reflectance sampling.
It should be noted that, the order of executing step 201 and step 202 is not limited, as long as step 201 and step 202 are completed before step 203 starts to be executed. In practical applications, step 201 may be performed first, and then step 202 may be performed; step 202 may be executed first, and then step 201 may be executed; it is also possible that step 201 and step 202 start to be performed simultaneously for different film samples.
In step 203 and step 204, the second measurement formula includes a measurement formula capable of quantitatively calculating the content of any chemical bond of the film by using the value of the infrared absorption spectrum after measuring the infrared absorption spectrum of the film by using an infrared attenuated total reflection sampling method.
It can be understood that there may be a difference in measurement between the first data corresponding to the first optical key obtained by using the infrared transmission sampling method and the second data corresponding to the first optical key obtained by using the infrared multiple attenuated total reflection sampling method, and based on this, the second measurement formula can be obtained by finding the difference in measurement between the first data and the second data and correcting the first measurement formula by using the difference in measurement.
Based on this, in practical applications, in some embodiments, the determining the association relationship between the data in the first data set and the data in the second data set includes:
performing linear fitting on the data in the first data set and the data in the second data set to obtain a fitting coefficient;
obtaining a second metering formula based on the incidence relation and the first metering formula, wherein the obtaining of the second metering formula comprises:
and obtaining the second metering formula based on the fitting coefficient and the first metering formula.
Wherein, in some embodiments, said deriving the second metric formula based on the fitting coefficients and the first metric formula comprises:
and taking the product of the fitting coefficient and the first metering formula to obtain the second metering formula.
In practical applications, when the linear fitting result satisfies the preset condition, it can be considered that the data in the first data set and the data in the second data set have a good linear relationship, and it is further verified that the difference between the two data sets is mainly measured. Here, the fitting coefficient may be understood as a constant reflecting a multiple relationship between the first and second measurement formulas, and the second measurement formula may be obtained by correcting the first measurement formula using the constant.
In practical application, after the second measurement formula is obtained by using the film sample, the measurement formula can be used to obtain the content of the first chemical bond in the film consistent with the material of the film sample.
Based on this, in some embodiments, the method further comprises:
measuring the infrared absorption spectrum of the first film by using a second testing method to obtain third data corresponding to the first chemical bond; the first film is the same material as the film sample;
and obtaining the content of the first chemical bond in the first film by utilizing the second metering formula based on the third data.
Further, after the second measurement formula is obtained by using the film sample, the measurement formula can be used to obtain the content of the first element in the film consistent with the material of the film sample.
Based on this, in some embodiments, the method further comprises:
determining a plurality of chemical bonds comprising a first element in the first film;
obtaining the content of each chemical bond in the plurality of chemical bonds based on a second metering formula corresponding to the content of each chemical bond in the plurality of chemical bonds;
and determining the content of the first element according to the content of each chemical bond.
Wherein, in some embodiments, before the obtaining of the content of each of the plurality of chemical bonds based on the second metering formula corresponding to the content of each of the plurality of chemical bonds, the method further comprises:
and respectively determining a second metering formula corresponding to the content of each chemical bond in the plurality of chemical bonds.
In practical applications, the second measurement formula corresponding to each of the plurality of chemical bonds including the first element in the thin film sample can be determined by using the method for determining the second measurement formula corresponding to the first chemical bond. For example, still taking a silicon nitride film as an example, it is necessary to measure the content of H element in the silicon nitride film. Specifically, firstly, chemical bonds containing H elements in the silicon nitride film are determined to comprise [ Si-H ] chemical bonds and [ N-H ] chemical bonds; then obtaining the content of the [ Si-H ] chemical bond according to a second metering formula corresponding to the [ Si-H ] chemical bond, and obtaining the content of the [ N-H ] chemical bond according to a second metering formula corresponding to the [ N-H ] chemical bond; then obtaining the content of H in the [ Si-H ] chemical bond and the content of H in the [ N-H ] chemical bond; and finally, obtaining the total content of the H element in the silicon nitride film according to the content of the H in the [ Si-H ] chemical bond and the content of the H in the [ N-H ] chemical bond.
According to the data processing method provided by the embodiment of the invention, the infrared absorption spectra of a plurality of film samples are measured by using a first testing method for sampling in an infrared transmission mode, so that a first data set corresponding to a first chemical bond in the film samples is obtained; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the first data set using a first metrology formula; measuring the infrared absorption spectra of the plurality of film samples by using a second testing method adopting an infrared multiple attenuation total reflection mode for sampling to obtain a second data set corresponding to the first chemical bond; determining a degree of association of data in the first data set and data in the second data set; obtaining a second metering formula based on the correlation degree and the first metering formula; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the second data set in combination with the second metrology formula. In the embodiment of the invention, two different sampling modes are utilized to respectively acquire data of a plurality of film samples to obtain two groups of data sets, the correlation degree between the data in the two groups of data sets and the corresponding metering formula of the content of the first chemical bond when the infrared absorption spectrum of the film to be sampled is obtained in an infrared transmission mode are utilized to obtain the corresponding metering formula of the content of the first chemical bond when the infrared absorption spectrum of the film to be sampled is obtained in a multi-attenuation total reflection sampling mode. Therefore, the measurement scheme provided by the embodiment of the invention can obtain a metering formula for calculating the content of the first chemical bond in the film to be sampled when the infrared absorption spectrum of the film to be sampled is obtained by adopting multiple times of attenuated total reflection sampling.
In one application scenario of the embodiment of the invention, the film sample is 18 silicon nitride films with different formation information; the first chemical bond of the film is [ Si-H ] chemical bond or [ N-H ] chemical bond, and the first metering formula is the metering formula (1) or the metering formula (2); the first element is an H element. In this application embodiment, an implementation flow of the data processing method is shown in fig. 3, and includes:
step 301: carrying out infrared transmission sampling mode test, and respectively reading the peak heights of the N-H, Si-H;
step 302: performing infrared multiple attenuation total reflection sampling mode test, and respectively reading the peak height of N-H, Si-H;
step 303: respectively carrying out linear fitting on 18 pairs of N-H/Si-H data, wherein the fitting result shows that the correlation between the N-H/Si-H data and the fitting result is good; on the basis of Lanford and Rand Method, a first metering formula is calibrated to obtain a quantitative formula for measuring the H content in the ultrathin SiN film based on an infrared multiple attenuated total reflection sampling mode (namely a WaflR sampling accessory).
In practical applications, in step 301 and step 302, the object to be tested may include 18 silicon nitride samples; the 18 silicon nitride samples were deposited by Chemical Vapor Deposition (CVD) with different process parameters during Deposition. Based on this, the 18 silicon nitride samples differ in their structural information.
Here, the peak height of the N-H, Si-H peak is understood to mean the absorbance corresponding to the [ N-H ] bond and the [ Si-H ] bond, respectively, or other measures having a similar meaning to the absorbance obtained from the infrared absorption spectrum.
In step 303, FIG. 4a shows the results of fitting 18 to a linear fit of Si-H data. As shown in FIG. 4a, in goodness of fit R2When 0.9912 is satisfied, the fitting coefficient is 0.0219, and the calibration of the fitting coefficient to the above-mentioned metric equation (1) can obtain [ Si-H corresponding to the WaflR sampling accessory]A chemical bond corresponds to a metering formula, which may be expressed as:
wherein the content of the first and second substances,
represents [ Si-H ] contained per cubic centimeter]The content of chemical bonds; peakhight indicates [ Si-H ] in infrared absorption spectrum of silicon nitride film]Peak to peak values of chemical bonds; thickness denotes the Thickness of the silicon nitride film.
Figure 4b shows the results of fitting 18 to the N-H data with a linear fit. As shown in FIG. 4b, in goodness of fit R2When 0.9632 is satisfied, the fitting coefficient is 0.0296, and the above-mentioned metric equation (2) is calibrated to obtain [ N-H ] corresponding to the WaflR sampling accessory]A chemical bond corresponds to a metering formula, which may be expressed as:
wherein the content of the first and second substances,
represents [ N-H ] contained in each cubic centimeter]The content of chemical bonds; peakhight indicates [ N-H ] in infrared absorption spectrum of silicon nitride film]Peak to peak values of chemical bonds; thickness means nitrogenThe thickness of the silicon film.
Further, on the basis of the formula (6), the content of H in the [ Si-H ] chemical bond can be obtained, and on the basis of the formula (7), the content of H in the [ N-H ] chemical bond can be obtained; the H content in the silicon nitride film can be obtained based on the content of H in the [ Si-H ] chemical bond and the content of H in the [ N-H ] chemical bond.
While the WafIR sampling accessory is described as being suitable for measuring thin films, the present application example establishes a method for measuring H content in ultra-thin silicon nitride films based on the WafIR sampling accessory.
It should be noted that: "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
In addition, the technical solutions described in the embodiments of the present invention may be arbitrarily combined without conflict.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (7)
1. A data processing method, comprising:
measuring infrared absorption spectra of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a first data set corresponding to a first chemical bond in the film samples; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the first data set using a first metrology formula;
measuring the infrared absorption spectra of the plurality of film samples by using a second testing method adopting an infrared multiple attenuation total reflection mode for sampling to obtain a second data set corresponding to the first chemical bond;
determining a degree of association of data in the first data set and data in the second data set;
obtaining a second metering formula based on the correlation degree and the first metering formula; wherein the content of the first chemical bond in the film sample can be obtained based on the data in the second data set in combination with the second metrology formula.
2. The method of claim 1, wherein determining the association of the data in the first data set and the data in the second data set comprises:
performing linear fitting on the data in the first data set and the data in the second data set to obtain a fitting coefficient;
obtaining a second metering formula based on the incidence relation and the first metering formula, wherein the obtaining of the second metering formula comprises:
and obtaining the second metering formula based on the fitting coefficient and the first metering formula.
3. The method of claim 2, wherein said deriving the second metrology formula based on the fitting coefficients and the first metrology formula comprises:
and taking the product of the fitting coefficient and the first metering formula to obtain the second metering formula.
4. The method of claim 1, further comprising:
measuring the infrared absorption spectrum of the first film by using a second testing method to obtain third data corresponding to the first chemical bond; the first film is the same material as the film sample;
and obtaining the content of the first chemical bond in the first film by utilizing the second metering formula based on the third data.
5. The method of claim 4, further comprising:
determining a plurality of chemical bonds comprising a first element in the first film;
obtaining the content of each chemical bond in the plurality of chemical bonds based on a second metering formula corresponding to the content of each chemical bond in the plurality of chemical bonds;
and determining the content of the first element according to the content of each chemical bond.
6. The method of claim 5, further comprising:
and respectively determining a second metering formula corresponding to the content of each chemical bond in the plurality of chemical bonds.
7. The method according to claim 1, wherein the first test method of sampling by infrared transmission is used for measuring infrared absorption spectra of a plurality of film samples to obtain a first data set corresponding to a first chemical bond in the film samples; the method comprises the following steps:
measuring infrared absorption spectra of a plurality of film samples by using a first testing method for sampling in an infrared transmission mode to obtain a plurality of infrared absorption spectra corresponding to the plurality of film samples;
for each infrared absorption spectrum in the plurality of infrared absorption spectra, searching by using the characteristic absorption frequency corresponding to the first chemical bond to obtain first data corresponding to the first chemical bond in the corresponding infrared absorption spectrum; wherein the content of the first and second substances,
a plurality of first data corresponding to a first chemical bond in a plurality of infrared absorption spectra forms the first data set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010978746.5A CN112185470B (en) | 2020-09-17 | 2020-09-17 | Data processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010978746.5A CN112185470B (en) | 2020-09-17 | 2020-09-17 | Data processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112185470A true CN112185470A (en) | 2021-01-05 |
| CN112185470B CN112185470B (en) | 2021-07-06 |
Family
ID=73921476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010978746.5A Active CN112185470B (en) | 2020-09-17 | 2020-09-17 | Data processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112185470B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796980A (en) * | 2004-12-28 | 2006-07-05 | 中国石油化工股份有限公司 | Method for measuring content of dialkene in C10-C13 positive formation hydrocarbon through spectrum of infrared light |
| CN101339131A (en) * | 2008-08-13 | 2009-01-07 | 中国石油天然气集团公司 | Rock core microscopic various light spectrum image-forming information comprehensive processing method |
| CN102680410A (en) * | 2012-05-03 | 2012-09-19 | 中国科学院宁波材料技术与工程研究所 | Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film |
| JP2015203632A (en) * | 2014-04-15 | 2015-11-16 | キヤノン株式会社 | Sample evaluation method and sample evaluation device |
| CN106769980A (en) * | 2016-11-22 | 2017-05-31 | 南京财经大学 | A kind of method for distinguishing cereal and insect infrared radiation absorption characteristic |
| WO2018219969A1 (en) * | 2017-05-29 | 2018-12-06 | RUHR-UNIVERSITäT BOCHUM | Biosensor for conformation and secondary structure analysis |
-
2020
- 2020-09-17 CN CN202010978746.5A patent/CN112185470B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796980A (en) * | 2004-12-28 | 2006-07-05 | 中国石油化工股份有限公司 | Method for measuring content of dialkene in C10-C13 positive formation hydrocarbon through spectrum of infrared light |
| CN101339131A (en) * | 2008-08-13 | 2009-01-07 | 中国石油天然气集团公司 | Rock core microscopic various light spectrum image-forming information comprehensive processing method |
| CN102680410A (en) * | 2012-05-03 | 2012-09-19 | 中国科学院宁波材料技术与工程研究所 | Method for non-destructively, quickly and accurately characterizing bonding structure of tetrahedral amorphous carbon film |
| JP2015203632A (en) * | 2014-04-15 | 2015-11-16 | キヤノン株式会社 | Sample evaluation method and sample evaluation device |
| CN106769980A (en) * | 2016-11-22 | 2017-05-31 | 南京财经大学 | A kind of method for distinguishing cereal and insect infrared radiation absorption characteristic |
| WO2018219969A1 (en) * | 2017-05-29 | 2018-12-06 | RUHR-UNIVERSITäT BOCHUM | Biosensor for conformation and secondary structure analysis |
Non-Patent Citations (3)
| Title |
|---|
| W. A. LANFORD等: "The hydrogen content of plasma‐deposited silicon nitride", 《AIP》 * |
| WILLIAM QUERIDO 等: "Validated Approaches for Quantification of Bone Mineral Crystallinity Using Transmission Fourier Transform Infrared (FT-IR), Attenuated Total Reflection (ATR) FT-IR, and Raman Spectroscopy", 《PUBMED》 * |
| 刘 咏等: "红外ATＲ技术在液体样品检验中的应用研究", 《云南警官学院学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112185470B (en) | 2021-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5381228A (en) | Rapid estimation of the oxygen permeation rate of a thin film on a plastic container | |
| US8734536B2 (en) | Temperature-adjusted spectrometer | |
| JP5452867B2 (en) | Heat selective multivariate optical computing | |
| US7663097B2 (en) | Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement | |
| US8119991B2 (en) | Method and apparatus for accurate calibration of VUV reflectometer | |
| US7868296B2 (en) | Spectroscopy having correction for broadband distortion for analyzing multi-component samples | |
| US7282703B2 (en) | Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement | |
| US7511265B2 (en) | Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement | |
| JP2009536354A (en) | A method and apparatus for precisely calibrating a reflectometer using a specific reflectivity measurement method | |
| US5250811A (en) | Method for determining compositional information of a multilayer web | |
| US6222199B1 (en) | Ultrathin layer measurement having a controlled ambient of light path | |
| Pope | Near-infrared spectroscopy of wood products | |
| Gardella et al. | Comparison of attenuated total reflectance and photoacoustic sampling for surface analysis of polymer mixtures by Fourier transform infrared spectroscopy | |
| US7399975B2 (en) | Method and apparatus for performing highly accurate thin film measurements | |
| CN112185470B (en) | Data processing method | |
| US12009784B2 (en) | Water reflection analysis of encapsulated photovoltaic modules | |
| US20110052447A1 (en) | Detection System for Detecting and Measuring Metal Ions in an Aqueous Medium | |
| JP4792267B2 (en) | Surface state measuring method and apparatus | |
| Graf et al. | Fourier transform infrared ellipsometry of thin polymer films | |
| CN110057401A (en) | A kind of transparent ultrathin membrane refractive index and method for measuring thickness | |
| Resende et al. | Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films | |
| JPH07502344A (en) | Reflection-free polarimetry system for small volume sample cells | |
| Carter III | Ultraviolet photoacoustic spectroscopy evaluation of the distribution of ultraviolet absorber paint additives as a result of processing | |
| KR102501736B1 (en) | Inspection equipment for wafer insulating film | |
| Weidner et al. | Characterization of thin oxide‐n itride double layers on silicon wafers by IR ellipsometry |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |