CN112180502A - Silicon-based optical coupling structure, silicon-based monolithic integrated optical device and manufacturing method thereof - Google Patents
Silicon-based optical coupling structure, silicon-based monolithic integrated optical device and manufacturing method thereof Download PDFInfo
- Publication number
- CN112180502A CN112180502A CN201910600344.9A CN201910600344A CN112180502A CN 112180502 A CN112180502 A CN 112180502A CN 201910600344 A CN201910600344 A CN 201910600344A CN 112180502 A CN112180502 A CN 112180502A
- Authority
- CN
- China
- Prior art keywords
- silicon
- grating structure
- optical waveguide
- grating
- waveguide structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The application provides a silicon-based optical coupling structure, a silicon-based monolithic integrated optical device and a manufacturing method thereof. The silicon-based optical coupling structure includes: a first grating structure and a first optical waveguide structure formed in a top silicon of a silicon-on-insulator (SOI) substrate, the stripe-shaped scores of the first grating structure are distributed in a lateral direction, and the first grating structure and the first optical waveguide structure are connected in the lateral direction; the second grating structure is positioned above the first grating structure, the strip-shaped nicks of the second grating structure are distributed in the transverse direction, and the second grating structure is opposite to the first grating structure in the longitudinal direction; a second optical waveguide structure connected in a lateral direction to the second grating structure; and an outer cladding layer covering the first grating structure, the first optical waveguide structure, the second grating structure, and the second optical waveguide structure.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a silicon-based optical coupling structure and a method for manufacturing the same, and a silicon-based monolithic integrated optical device and a method for manufacturing the same.
Background
The silicon photon practical application faces a great technical problem in light sources, and silicon is an indirect band gap material, so that the light emitting efficiency is low, the band edge absorption coefficient is low, and a silicon light emitting device is difficult to realize.
The method of introducing light of an external light source into a chip by using a coupler and adopting a III-V group hybrid integrated laser are the most mainstream methods of introducing the light source at present.
In addition to the above methods, an all-silicon raman laser researched by Intel (Intel) and a silicon germanium and III-V quantum dot monolithic integrated laser researched by the american college of labor and technology of massachusetts and the american university of california have made a series of breakthroughs in recent years, the performance of the lasers gradually meets practical requirements, and technical reserves are provided for realizing silicon-based optical interconnection compatible with a complete CMOS process in the future.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
The silicon-based monolithic integrated laser needs to epitaxially grow germanium, III-V and other direct band gap materials on silicon or silicon-on-insulator, and due to the difference between the material system and the material height, the realization of the high-efficiency optical field coupling of the laser and a silicon optical chip has a great challenge, and is one of the important challenges facing the practical application of the current silicon-based monolithic integrated laser.
The inventors of the present application found that: the existing silicon-based monolithic integrated laser and a silicon optical chip have large height difference, and the optical fields of the existing silicon-based monolithic integrated laser and the silicon optical chip are difficult to couple, so that the combination of the silicon-based monolithic integrated laser and the silicon optical chip is limited.
The embodiment of the application provides a silicon-based optical coupling structure and a manufacturing method thereof, and a silicon-based monolithic integrated optical device and a manufacturing method thereof.
According to an aspect of an embodiment of the present application, there is provided a silicon-based optical coupling structure, comprising:
a first grating structure and a first optical waveguide structure formed in a top silicon of a silicon-on-insulator (SOI) substrate, the stripe-shaped scores of the first grating structure are distributed in a lateral direction, and the first grating structure and the first optical waveguide structure are connected in the lateral direction;
the second grating structure is positioned above the first grating structure, the strip-shaped nicks of the second grating structure are distributed in the transverse direction, and the second grating structure is opposite to the first grating structure in the longitudinal direction;
a second optical waveguide structure connected in a lateral direction to the second grating structure; and
an outer cladding layer covering the first grating structure, the first optical waveguide structure, the second grating structure, and the second optical waveguide structure, wherein a refractive index of a material of the outer cladding layer is lower than a refractive index of a material of the first grating structure, a material of the first optical waveguide structure, a material of the second grating structure, and a material of the second optical waveguide structure.
According to another aspect of the embodiments of the present application, there is provided a silicon-based monolithically integrated optical device having:
the silicon-based optical coupling structure of the above aspect of the embodiment; and
a laser formed on the top silicon surface of the silicon-on-insulator (SOI) substrate, and/or a silicon photonic chip formed in the top silicon of the silicon-on-insulator (SOI) substrate, wherein the light emitting layer of the laser is at the same height as the second optical waveguide structure and laterally faces the second optical waveguide structure, the light emitting layer is covered by the outer cladding layer, the light receiving portion of the silicon photonic chip laterally faces the first optical waveguide structure, and the light receiving portion is covered by the outer cladding layer.
According to another aspect of an embodiment of the present application, there is provided a method of fabricating a silicon-based optical coupling structure, comprising:
forming a first grating structure and a first optical waveguide structure in top silicon of a silicon-on-insulator (SOI) substrate, wherein the stripe-shaped nicks of the first grating structure are distributed in a transverse direction, and the first grating structure and the first optical waveguide structure are connected in the transverse direction;
forming a first outer cladding layer overlying the first grating structure and the first optical waveguide structure;
forming a second grating structure and a second optical waveguide structure on the surface of the first outer cladding layer, wherein the strip-shaped nicks of the second grating structure are distributed in the transverse direction, the second grating structure is opposite to the first grating structure in the longitudinal direction, and the second optical waveguide structure is connected with the second grating structure in the transverse direction; and
forming a second outer cladding layer overlying the second grating structure and the second optical waveguide structure,
wherein the refractive indices of the materials of the first and second overcladding layers are lower than the refractive indices of the materials of the first and second grating structures, the materials of the first and second optical waveguide structures, and the materials of the second optical waveguide structure.
According to another aspect of the embodiments of the present application, there is provided a method for manufacturing a silicon-based monolithically integrated optical device, the method having the method for manufacturing a silicon-based optical coupling structure according to the above aspect, the method further having:
after forming the second outer cladding layer, etching a part of the second outer cladding layer until the top silicon of a silicon-on-insulator (SOI) substrate is exposed, epitaxially growing a laser material stack on the surface of the top silicon, preparing a laser, and forming a third outer cladding layer to cover a light emitting layer of the laser, wherein the light emitting layer of the laser is the same height as the second optical waveguide structure and faces the second optical waveguide structure in the transverse direction; and/or
Forming a silicon photo chip in the top silicon before forming the first grating structure and the first optical waveguide structure, a light receiving portion of the silicon photo chip facing the first optical waveguide structure in a lateral direction, the light receiving portion being covered by the first outer cladding layer.
The beneficial effect of this application lies in: the silicon-based optical coupling structure has two gratings arranged opposite in the longitudinal direction, and the longitudinal coupling of the optical field is realized through the two gratings, so that the coupling of the optical field can be realized between optical devices with different heights.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic cross-sectional view of a silicon-based monolithically integrated optical device having a silicon-based optical coupling structure of example 1 of the present application;
FIG. 2 is a schematic diagram of a method of fabricating a silicon-based optical coupling structure according to example 2 of the present application;
fig. 3 is a schematic diagram of a method for manufacturing a silicon-based monolithically integrated optical device according to embodiment 2 of the present application;
fig. 4 (a) to 4 (d) are cross-sectional views of devices corresponding to respective steps in this example of implementation 2.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the description of the embodiments of the present application, for convenience of description, a direction parallel to the surface of the substrate is referred to as "lateral direction", and a direction perpendicular to the surface of the substrate is referred to as "longitudinal direction", wherein "thickness" of each component refers to a dimension of the component in the "longitudinal direction", a direction pointing from the top silicon of the substrate to the first grating structure in the "longitudinal direction" is referred to as "upper" direction, and a direction opposite to the "upper" direction is referred to as "lower" direction.
Example 1
The embodiment of the application provides a silicon-based optical coupling structure.
Fig. 1 is a schematic cross-sectional view of a silicon-based monolithically integrated optical device having a silicon-based optical coupling structure of the present embodiment.
As shown in FIG. 1, a silicon-based optical coupling structure 1 comprises:
a first grating structure 12 and a first optical waveguide structure 13 formed in a top silicon 11 of a silicon-on-insulator (SOI) substrate 10, the stripe-shaped scores 121 of the first grating structure 12 are distributed in a lateral direction, and the first grating structure 12 and the first optical waveguide structure 13 are connected in the lateral direction;
a second grating structure 14 located above the first grating structure 12, the stripe-shaped nicks 141 of the second grating structure 14 are distributed in the transverse direction, and the second grating structure 14 is opposite to the first grating structure 12 in the longitudinal direction;
a second optical waveguide structure 15 connected to the second grating structure 14 in a lateral direction; and
an outer cladding layer 16 covering the first grating structure 12, the first optical waveguide structure 13, the second grating structure 14 and the second optical waveguide structure 15.
In the present embodiment, the material of the over cladding layer 16 has a refractive index lower than the refractive indices of the material of the first grating structure 12, the material of the first optical waveguide structure 13, the material of the second grating structure 14, and the material of the second optical waveguide structure 15.
According to the present embodiment, the first grating structure 12 and the second grating structure 14 are longitudinally opposed to each other, and longitudinal coupling of the optical field is possible, whereby coupling of the optical field can be achieved between optical devices having different heights; further, since the refractive index of the material of the outer cladding layer 16 is low and the refractive indices of the material of the first grating structure 12, the material of the first optical waveguide structure 13, the material of the second grating structure 14, and the material of the second optical waveguide structure 15 are high, light can be totally reflected in the first grating structure 12 and the first optical waveguide structure 13, and also can be totally reflected in the second grating structure 14 and the second optical waveguide structure 15, thereby preventing light leakage when light propagates through the silicon-based optical coupling structure 1.
In this embodiment, as shown in fig. 1, a silicon-on-insulator (SOI) substrate 10 may have a substrate silicon 101, a buried oxide layer 102, and a top layer silicon 11. The material of the buried oxide layer 102 is silicon oxide, which has a lower refractive index than the top layer silicon 11, thereby preventing light propagating in the first grating structure 12 and the first optical waveguide structure 13 from leaking from the buried oxide layer 102.
In the present embodiment, the first grating structure 12 and the first optical waveguide structure 13 may be formed by patterning the top silicon 11.
As shown in fig. 1, in the present embodiment, the bar-shaped scores 121 of the first grating structure 12 are located on the upper surface of the top silicon 11, and the bar-shaped scores 121 of the first grating structure 12 do not penetrate the top silicon 11 in the longitudinal direction, that is, in the first grating structure 12, the bar-shaped scores 121 are formed on the upper surface of the top silicon 11, thereby receiving light propagating from the upper side, and the top silicon under the bar-shaped scores 121 is connected in the lateral direction, thereby light coupled to the bar-shaped scores 121 may propagate in the lateral direction through the top silicon under the bar-shaped scores 121.
In the present embodiment, the bar-shaped notch 141 of the second grating structure 14 is located on the lower surface of the second grating structure 14, and the bar-shaped notch 141 of the second grating structure 14 does not penetrate the second grating structure in the longitudinal direction, that is, in the second grating structure 14, the bar-shaped notch 141 is formed on the lower surface of the second grating structure 14, thereby enabling light to propagate to the lower side, and the portions of the second grating structure 14 above the bar-shaped notch 141 are connected in the lateral direction, thereby the second optical waveguide structure 15 can propagate light to the portions connected in the lateral direction and downward through the bar-shaped notch 141.
In the present embodiment, the center in the lateral direction of the first grating structure 12 and the center in the lateral direction of the second grating structure 14 are in the same position in the lateral direction, whereby the efficiency of optical coupling between the first grating structure 12 and the second grating structure 14 can be improved.
In the present embodiment, the material of the second grating structure 14 and the material of the second optical waveguide structure 15 may be Silicon nitride (SiN), Silicon oxynitride (SiON), polysilicon (Poly Silicon), or Amorphous Silicon (amophorus Silicon). The material of the outer cladding 16 may be silicon dioxide (SiO)2)。
As shown in fig. 1, the second grating structure 14 and the second optical waveguide structure 15 may be completely covered by the outer cladding layer 16 in the lower lateral and longitudinal directions. The upper surfaces and lateral directions of the first grating structure 12 and the first optical waveguide structure 13 may be covered by the outer cladding layer 16, and the lower surfaces of the first grating structure 12 and the first optical waveguide structure 13 may be covered by the buried oxide layer 102.
In this embodiment, the distance between the first grating structure 12 and the second grating structure 14 in the longitudinal direction may be determined by the height difference of the devices that need to be optically coupled in the silicon-based optical coupling structure 1, so that the optical field can be coupled between the devices with the height difference.
As shown in fig. 1, the silicon-based monolithically integrated optical device 100 may have: a silicon-based optical coupling structure 1, a laser 2, and a silicon optical chip 3.
As shown in fig. 1, the laser 2 may be formed on a top silicon 11 surface of a silicon-on-insulator (SOI) substrate 10, and the silicon photonic chip 3 may be formed in the top silicon 11 of the silicon-on-insulator (SOI) substrate 10.
In the present embodiment, the laser 2 may be, for example, an edge-emitting laser. The light emitting layer 21 of the laser 2 is at the same height as the second optical waveguide structure 15 and laterally faces the second optical waveguide structure 15, and the light emitting layer 21 may be laterally covered by the over cladding layer 16, whereby light emitted by the light emitting layer 21 may be coupled into the second optical waveguide structure 15 via the over cladding layer 16.
In this embodiment, a light receiving portion (not shown) of the silicon photo chip 3 may be directed toward the first optical waveguide structure 13 in a lateral direction, and an upper surface of the light receiving portion may be covered with an outer cladding layer 16. Thereby, light coupled into the first optical waveguide structure 13 can be coupled into the silicon photonics chip 3.
As shown in fig. 1, in the present embodiment, light emitted from the light emitting layer 21 of the laser 2 is emitted downward through the second grating structure 14, and light propagating through the outer cladding layer 16 between the second grating structure 14 and the first grating structure 12 is coupled into the first grating structure 12 and into the first optical waveguide structure 13, and is further guided into the silicon optical chip 3. Therefore, the silicon-based optical coupling structure 1 of the embodiment of the application can change the propagation direction of light and realize efficient coupling of an optical field under large height difference.
It should be noted that, in fig. 1, the silicon-based monolithic integrated optical device 100 has both the laser 2 and the silicon optical chip 3, but the present embodiment is not limited to this, and for example, the silicon-based monolithic integrated optical device 100 may have only one of the laser 2 and the silicon optical chip 3 in addition to the silicon-based optical coupling structure 1. In addition, in the present embodiment, the laser 2 and the silicon microchip 3 are merely examples, and the present embodiment may not be limited thereto, and for example, the laser 2 and the silicon microchip 3 may be other optical devices.
Example 2
Fig. 2 is a schematic diagram of a method for fabricating a silicon-based optical coupling structure according to this embodiment, and as shown in fig. 2, in this embodiment, the method may include:
In this implementation, the first outer cladding layer formed in step 202 and the second outer cladding layer formed in step 204 may form part of the outer cladding layer 16 in example 1.
In the present embodiment, the refractive indices of the materials of the first and second outer claddings are lower than the refractive indices of the materials of the first grating structure 12, the first optical waveguide structure 13, the second grating structure 14 and the second optical waveguide structure 15.
In the present embodiment, the center in the lateral direction of the first grating structure 12 is in the same position in the lateral direction as the center in the lateral direction of the second grating structure 14.
In this embodiment, the method for fabricating the silicon-based optical coupling structure shown in fig. 2 may be included in the method for fabricating the silicon-based monolithically integrated optical device 100 described in embodiment 1.
Fig. 3 is a schematic diagram of a method for manufacturing a silicon-based monolithic integrated optical device according to this embodiment, as shown in fig. 3, in this embodiment, the method may include:
In this implementation, the first outer cladding layer formed in step 202, the second outer cladding layer formed in step 204, and the third outer cladding layer formed in step 302 may form part of the outer cladding layer 16 in example 1.
In the method of fig. 3, both of the steps 301 and 302 may exist, or one of the steps 301 and 302 may exist.
The method for manufacturing the silicon-based monolithic integrated optical device of the present application is described below with reference to a specific example.
Fig. 4 is a cross-sectional view of the device corresponding to the steps in this example, as shown in fig. 4, the method for manufacturing the silicon-based monolithic integrated optical device includes the following steps:
step 401, as shown in fig. 4 (a), forming a first grating structure 12 and a first optical waveguide structure 13 in a top silicon 11 of a silicon-on-insulator (SOI) substrate 10 by photolithography and etching, wherein the stripe-shaped indentations 121 of the first grating structure 12 are distributed in a lateral direction, and the first grating structure 12 and the first optical waveguide structure 13 are connected in the lateral direction; then, a first outer cladding 161 covering the first grating structure 12 and the first optical waveguide structure 13 is formed, the first outer cladding 161 being silicon dioxide;
step 402, as shown in fig. 4 (b), a tooth-like protrusion pattern 142 corresponding to the shape of the bar-shaped notch 141 of the second grating structure 14 is etched on the upper surface of the first outer cladding layer 161;
step 403, as shown in fig. 4 (c), depositing a silicon nitride material on the upper surface of the tooth-like protrusion pattern 142 and the vicinity thereof, etching the silicon nitride material to form the second grating structure 14 and the second optical waveguide structure 15, and polishing the upper surfaces of the second grating structure 14 and the second optical waveguide structure 15 by chemical mechanical polishing; then, a second outer cladding layer 162 covering the second grating structure 14 and the second optical waveguide structure 15 is formed; and
step 404, as shown in fig. 4 (d), after forming the second outer cladding layer 162, etching a portion of the second outer cladding layer 162 until the top silicon 11 of the silicon-on-insulator (SOI) substrate 10 is exposed, and epitaxially growing a laser material stack (e.g., III-V material) on the surface of the top silicon 11, and preparing the edge-emitting laser 2; then, a third over cladding layer 163 is formed to cover the light emitting layer 21 of the laser 2, wherein the light emitting layer 21 is at the same height as the second optical waveguide structure 15 and faces the second optical waveguide structure 15 in the lateral direction, and the third over cladding layer 163 also fills the region between the light emitting layer 21 and the second optical waveguide structure 15.
According to the present embodiment, the first grating structure 12 and the second grating structure 14 are longitudinally opposed to each other, and longitudinal coupling of the optical field is possible, whereby coupling of the optical field can be achieved between optical devices having different heights; further, since the refractive index of the material of the outer cladding layer 16 is low and the refractive indices of the material of the first grating structure 12, the material of the first optical waveguide structure 13, the material of the second grating structure 14, and the material of the second optical waveguide structure 15 are high, light can be totally reflected in the first grating structure 12 and the first optical waveguide structure 13, and also can be totally reflected in the second grating structure 14 and the second optical waveguide structure 15, thereby preventing light leakage when light propagates through the silicon-based optical coupling structure 1.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (10)
1. A silicon-based optical coupling structure, comprising:
a first grating structure and a first optical waveguide structure formed in a top silicon of a silicon-on-insulator (SOI) substrate, the stripe-shaped scores of the first grating structure are distributed in a lateral direction, and the first grating structure and the first optical waveguide structure are connected in the lateral direction;
the second grating structure is positioned above the first grating structure, the strip-shaped nicks of the second grating structure are distributed in the transverse direction, and the second grating structure is opposite to the first grating structure in the longitudinal direction;
a second optical waveguide structure connected in a lateral direction to the second grating structure; and
an outer cladding layer covering the first grating structure, the first optical waveguide structure, the second grating structure, and the second optical waveguide structure,
wherein a refractive index of a material of the over cladding layer is lower than a refractive index of a material of the first grating structure, a material of the first optical waveguide structure, a material of the second grating structure, and a material of the second optical waveguide structure.
2. A silicon-based optical coupling structure according to claim 1,
the strip-shaped nicks of the first grating structures are located on the upper surface of the top silicon layer, and do not penetrate through the top silicon layer in the longitudinal direction.
3. A silicon-based optical coupling structure according to claim 1,
the strip-shaped nicks of the second grating structure are located on the lower surface of the second grating structure, and the strip-shaped nicks of the second grating structure do not penetrate through the second grating structure in the longitudinal direction.
4. A silicon-based optical coupling structure according to claim 1,
the material of the second grating structure and the material of the second optical waveguide structure are Silicon nitride (SiN), Silicon oxynitride (SiON), polysilicon (Poly Silicon) or Amorphous Silicon (Amorphous Silicon).
5. A silicon-based optical coupling structure according to claim 1,
the outer cladding layer is made of silicon dioxide (SiO)2)。
6. A silicon-based optical coupling structure according to claim 1,
the center of the first grating structure in the lateral direction is located at the same position in the lateral direction as the center of the second grating structure in the lateral direction.
7. A silicon-based monolithically integrated optical device, comprising:
a silicon-based optical coupling structure according to any of claims 1 to 6; and
a laser formed on the top silicon surface of the silicon-on-insulator (SOI) substrate, and/or a silicon photonics chip formed in the top silicon of the silicon-on-insulator (SOI) substrate,
wherein the content of the first and second substances,
a light emitting layer of the laser is at the same height as the second optical waveguide structure and laterally facing the second optical waveguide structure, the light emitting layer being covered by the over cladding layer,
the light receiving part of the silicon optical chip faces the first optical waveguide structure in the transverse direction, and the light receiving part is covered by the outer cladding layer.
8. A method of fabricating a silicon-based optical coupling structure, comprising:
forming a first grating structure and a first optical waveguide structure in top silicon of a silicon-on-insulator (SOI) substrate, wherein the stripe-shaped nicks of the first grating structure are distributed in a transverse direction, and the first grating structure and the first optical waveguide structure are connected in the transverse direction;
forming a first outer cladding layer overlying the first grating structure and the first optical waveguide structure;
forming a second grating structure and a second optical waveguide structure on the surface of the first outer cladding layer, wherein the strip-shaped nicks of the second grating structure are distributed in the transverse direction, the second grating structure is opposite to the first grating structure in the longitudinal direction, and the second optical waveguide structure is connected with the second grating structure in the transverse direction; and
forming a second outer cladding layer overlying the second grating structure and the second optical waveguide structure,
wherein the refractive indices of the materials of the first and second overcladding layers are lower than the refractive indices of the materials of the first and second grating structures, the materials of the first and second optical waveguide structures, and the materials of the second optical waveguide structure.
9. The method of fabricating a silicon-based optical coupling structure according to claim 8,
the center of the first grating structure in the lateral direction is located at the same position in the lateral direction as the center of the second grating structure in the lateral direction.
10. A method of fabricating a silicon-based monolithically integrated optical device, the method having the method of fabricating a silicon-based optical coupling structure according to any of claims 8 to 9,
the method also has:
after forming the second outer cladding layer, etching a part of the second outer cladding layer until the top silicon of a silicon-on-insulator (SOI) substrate is exposed, epitaxially growing a laser material stack on the surface of the top silicon, preparing a laser, and forming a third outer cladding layer to cover a light emitting layer of the laser, wherein the light emitting layer of the laser is the same height as the second optical waveguide structure and faces the second optical waveguide structure in the transverse direction; and/or
Forming a silicon photo chip in the top silicon before forming the first grating structure and the first optical waveguide structure, a light receiving portion of the silicon photo chip facing the first optical waveguide structure in a lateral direction, the light receiving portion being covered by the first outer cladding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910600344.9A CN112180502A (en) | 2019-07-04 | 2019-07-04 | Silicon-based optical coupling structure, silicon-based monolithic integrated optical device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910600344.9A CN112180502A (en) | 2019-07-04 | 2019-07-04 | Silicon-based optical coupling structure, silicon-based monolithic integrated optical device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112180502A true CN112180502A (en) | 2021-01-05 |
Family
ID=73915202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910600344.9A Pending CN112180502A (en) | 2019-07-04 | 2019-07-04 | Silicon-based optical coupling structure, silicon-based monolithic integrated optical device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112180502A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022200428A1 (en) * | 2021-03-25 | 2022-09-29 | Ams Ag | Monolithically integrated optical assembly |
-
2019
- 2019-07-04 CN CN201910600344.9A patent/CN112180502A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022200428A1 (en) * | 2021-03-25 | 2022-09-29 | Ams Ag | Monolithically integrated optical assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN210123485U (en) | Silicon-based optical coupling structure and silicon-based monolithic integrated optical device | |
| US11133225B2 (en) | Mode converter and method of fabricating thereof | |
| CN108885307B (en) | Optical edge coupler with controllable mode field for photonic chips | |
| KR101591847B1 (en) | Efficient silicon-on-insulator grating coupler | |
| US9377587B2 (en) | Fiber optic coupler array | |
| US8873906B2 (en) | Optical conversion element and optical conversion element manufacturing method | |
| US9195001B2 (en) | Spot size converter, optical transmitter, optical receiver, optical transceiver, and method of manufacturing spot size converter | |
| JP5129350B2 (en) | Optical mode converter for specifically coupling optical fibers and high index difference waveguides | |
| US9435946B2 (en) | Interlayer light wave coupling device | |
| CN210123484U (en) | Silicon-based optical coupling structure and silicon-based monolithic integrated optical device | |
| US7664352B1 (en) | Spot size converter | |
| EP3296783B1 (en) | Integrated photonics waveguide grating coupler | |
| US6571039B1 (en) | Optical waveguide having a weakly-confining waveguide section and a strongly-confining waveguide section optically coupled by a tapered neck | |
| US8000565B2 (en) | Buried dual taper waveguide for passive alignment and photonic integration | |
| US8437585B2 (en) | Low-cost passive optical waveguide using Si substrate | |
| US20050185889A1 (en) | Polarization insensitive semiconductor optical amplifier | |
| US11150406B2 (en) | Optically active waveguide and method of formation | |
| KR20140054383A (en) | Vertical optical coupler for planar photonic circuits | |
| CN112180501A (en) | Silicon-based optical coupling structure, silicon-based monolithic integrated optical device and manufacturing method thereof | |
| US10330864B2 (en) | Construction of integrated mode transformers | |
| US9297956B2 (en) | Optical device, optical transmitter, optical receiver, optical transceiver, and method of manufacturing optical device | |
| JP2011203604A (en) | Optical element and method for manufacturing the same | |
| Takenaka et al. | InGaAsP grating couplers fabricated using complementary-metal–oxide–semiconductor-compatible III–V-on-insulator on Si | |
| US8150224B2 (en) | Spot-size converter | |
| JP2010139629A (en) | Spot size converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |