CN112179528A - CMOS integrated circuit and pressure sensor - Google Patents
CMOS integrated circuit and pressure sensor Download PDFInfo
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- CN112179528A CN112179528A CN202010850942.4A CN202010850942A CN112179528A CN 112179528 A CN112179528 A CN 112179528A CN 202010850942 A CN202010850942 A CN 202010850942A CN 112179528 A CN112179528 A CN 112179528A
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- circuit
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
Abstract
The embodiment of the invention provides a CMOS integrated circuit and a pressure sensor, wherein the CMOS integrated circuit comprises a DC-DC converter, a voltage reference circuit and an instrument amplifier circuit, and is integrated on the same chip, wherein: the input end of the DC-DC converter is connected with the power supply end, and the output end of the DC-DC converter is connected with the input end of the voltage reference circuit and used for voltage conversion; the output end of the voltage reference circuit is connected with the power supply input end of the instrument amplifier circuit and the input end of the pressure sensing chip and used for adjusting the converted power supply voltage to obtain a reference voltage meeting a preset condition; the input end of the instrument amplifier circuit is connected with the output end of the pressure sensing chip and used for receiving the voltage signal sent by the pressure sensing chip and amplifying the voltage signal. According to the embodiment of the invention, the functions of power supply, signal amplification and the like are integrated on the same chip, so that the volume of the functional assembly is reduced, and the volume of the pressure sensor is reduced.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a CMOS integrated circuit and a pressure sensor.
Background
The pressure sensor is a device or apparatus which can sense pressure signals and can convert the pressure signals into electrical signals according to a certain rule. A pressure sensor is usually composed of a pressure sensitive element and a signal processing unit. Pressure sensors can be classified into gauge pressure sensors, differential pressure sensors, and absolute pressure sensors according to different types of test pressures.
The existing pressure sensor is mainly assembled by welding components on a Printed Circuit Board (PCB for short), however, the whole volume of the existing pressure sensor is large, so that the application range of the pressure sensor is limited, and meanwhile, the precision and the stability of the existing pressure sensor are further improved.
Therefore, a need exists for a CMOS integrated circuit and a pressure sensor that solve the above problems.
Disclosure of Invention
To solve the problems in the prior art, embodiments of the present invention provide a CMOS integrated circuit and a pressure sensor.
In a first aspect, an embodiment of the present invention provides a CMOS integrated circuit, including:
comprising a DC-DC converter, a voltage reference circuit and an instrumentation amplifier circuit, said DC-DC converter, said voltage reference circuit and said instrumentation amplifier circuit being integrated on the same chip, wherein:
the input end of the DC-DC converter is connected with the power supply end, and the output end of the DC-DC converter is connected with the input end of the voltage reference circuit and is used for performing voltage conversion on the power supply voltage provided by the power supply end;
the output end of the voltage reference circuit is connected with the power supply input end of the instrument amplifier circuit and the input end of the pressure sensing chip and is used for adjusting the power supply voltage converted by the DC-DC converter to obtain reference voltage meeting preset conditions;
the input end of the instrument amplifier circuit is connected with the output end of the pressure sensing chip and used for receiving the voltage signal sent by the pressure sensing chip and amplifying the voltage signal to obtain a voltage signal meeting the preset requirement, and the voltage signal is obtained by converting the pressure signal by the pressure sensing chip.
Furthermore, the CMOS integrated circuit further includes an RCR filter circuit, where the RCR filter circuit and the DC-DC converter are integrated on the same chip and used for filtering an output voltage of a power supply terminal, an input terminal of the RCR filter circuit is connected to the power supply terminal, and an output terminal of the RCR filter circuit is connected to an input terminal of the DC-DC converter.
Further, the CMOS integrated circuit further includes an anti-reverse diode, and the anti-reverse diode and the DC-DC converter are integrated on the same chip for performing anti-reverse protection, wherein the anti-reverse diode is disposed between the DC-DC converter and the RCR type filter circuit.
Further, the CMOS integrated circuit further includes a voltage follower and an amplification bias adjustment circuit, the voltage follower, the amplification bias adjustment circuit, and the instrumentation amplifier circuit being integrated on the same chip, wherein:
the input end of the voltage follower is connected with the output end of an external voltage circuit, and the output end of the voltage follower is connected with the input end of the amplification bias adjusting circuit and used for buffering between the external voltage circuit and the amplification bias adjusting circuit;
the output end of the amplification bias adjusting circuit is connected with the input end of the instrument amplifier circuit and used for carrying out offset adjustment on the voltage signal output by the pressure sensing chip.
Furthermore, the CMOS integrated circuit also comprises a temperature sensitive diode which is used for measuring the temperature of the CMOS integrated circuit so as to carry out gain temperature drift compensation according to the temperature measurement result.
Furthermore, the CMOS integrated circuit further includes an amplification gain adjustment circuit, which is an external circuit connected to the instrumentation amplifier circuit and configured to perform gain adjustment processing on the voltage signal output by the pressure sensing chip.
In a second aspect, embodiments of the present invention provide a pressure sensor, including a CMOS integrated circuit as provided in the first aspect.
According to the CMOS integrated circuit and the pressure sensor provided by the embodiment of the invention, functions such as power supply and signal amplification are integrated and packaged on the same chip, so that the volume of functional components is reduced to a greater extent, the overall volume of the pressure sensor is reduced, and meanwhile, the precision and the stability of the pressure sensor are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a CMOS integrated circuit according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The conventional pressure sensor is mainly assembled by welding components on a PCB (printed Circuit Board), and has larger integral volume.
Fig. 1 is a schematic structural diagram of a CMOS integrated circuit according to an embodiment of the present invention, and as shown in fig. 1, an embodiment of the present invention provides a CMOS integrated circuit, which includes a DC-DC converter 101, a voltage reference circuit 102, and an instrumentation amplifier circuit 103, where the DC-DC converter 101, the voltage reference circuit 102, and the instrumentation amplifier circuit 103 are integrated on a same chip, and where:
the input end of the DC-DC converter 101 is connected to the power supply end, and the output end of the DC-DC converter 101 is connected to the input end of the voltage reference circuit 102, and is configured to perform voltage conversion on the power supply voltage provided by the power supply end;
the output end of the voltage reference circuit 102 is connected to the power input end of the instrumentation amplifier circuit 103 and the input end of the pressure sensing chip, and is used for adjusting the power voltage converted by the DC-DC converter 101 to obtain a reference voltage meeting a preset condition.
In the embodiment of the present invention, the DC-DC converter 101 and the voltage reference circuit 102 perform voltage conversion on the power supply voltage, and convert the +28V power supply into +5V voltage, thereby providing appropriate power supply for the back-end circuit. The voltage reference circuit 102 performs automatic adjustment by sampling a reference voltage so that the DC-DC converter 101 recognizes the level of the output voltage from the voltage. Preferably, in the embodiment of the invention, bidirectional transient suppression diodes are added between all externally connected leads and the shell, so that damage to the integrated circuit caused by lightning conditions can be avoided.
The input end of the instrumentation amplifier circuit 103 is connected to the output end of the pressure sensing chip, and is used for receiving the voltage signal sent by the pressure sensing chip and amplifying the voltage signal to obtain a voltage signal meeting the preset requirement, wherein the voltage signal is obtained by converting the pressure signal by the pressure sensing chip.
According to the CMOS integrated circuit provided by the embodiment of the invention, functions such as power supply and signal amplification are integrated and packaged on the same chip, so that the volume of a functional assembly is reduced to a greater extent, the whole volume of the pressure sensor is reduced, and meanwhile, the precision and the stability of the pressure sensor are improved.
On the basis of the above embodiment, the CMOS integrated circuit further includes an RCR type filter circuit 104, where the RCR type filter circuit 104 and the DC-DC converter 101 are integrated on the same chip and used for filtering an output voltage of a power supply terminal, an input terminal of the RCR type filter circuit 104 is connected to the power supply terminal, and an output terminal of the RCR type filter circuit 104 is connected to an input terminal of the DC-DC converter 101.
On the basis of the above embodiment, the CMOS integrated circuit further includes an anti-reverse diode 105, and the anti-reverse diode 105 and the DC-DC converter 101 are integrated on the same chip for performing anti-reverse protection, wherein the anti-reverse diode 105 is disposed between the DC-DC converter 101 and the RCR type filter circuit 104.
On the basis of the above embodiment, the CMOS integrated circuit further includes a voltage follower 106 and an amplification bias adjusting circuit 107, and the voltage follower 106, the amplification bias adjusting circuit 107 and the instrumentation amplifier circuit 103 are integrated on the same chip, wherein:
the input end of the voltage follower 106 is connected with the output end of the external voltage-dividing circuit 108, and the output end of the voltage follower 106 is connected with the input end of the amplification bias adjusting circuit 107, so as to buffer between the external voltage-dividing circuit 108 and the amplification bias adjusting circuit 107;
the output end of the amplification bias adjusting circuit 107 is connected to the input end of the instrumentation amplifier circuit 103, and is used for performing offset adjustment on the voltage signal output by the pressure sensing chip.
On the basis of the above embodiment, the CMOS integrated circuit further includes a temperature sensitive diode 109 for measuring the temperature of the CMOS integrated circuit to perform gain temperature drift compensation according to the temperature measurement result.
On the basis of the above embodiment, the CMOS integrated circuit further includes an amplification gain adjustment circuit 110, where the amplification gain adjustment circuit 110 is an external circuit, and is connected to the instrumentation amplifier circuit 103, and is configured to perform gain adjustment processing on the voltage signal output by the pressure sensing chip.
In an embodiment of the present invention, referring to fig. 1, the CMOS integrated circuit integrates functions of power filtering, reverse prevention, DC-DC conversion, voltage reference, amplification bias adjustment, amplification gain adjustment, temperature sensing, and the like. The power supply filtering, anti-reverse, DC-DC conversion and voltage reference aims at reducing the power supply voltage supplied from the outside and obtaining a voltage reference with high precision and good stability; the purposes of the amplification bias adjustment, the amplification gain adjustment and the temperature sensing are to perform offset adjustment, gain adjustment and gain temperature drift compensation on the signals output by the pressure sensing chip. The embodiment of the invention integrates and encapsulates the power supply, the filtering and the amplification compensation functions of the pressure sensor on a chip by an integrated circuit technology, thereby greatly reducing the volume of the functional components.
The embodiment of the invention also provides a pressure sensor which comprises the CMOS integrated circuit provided by each embodiment. The CMOS integrated circuit of the pressure sensor integrates and encapsulates functions such as power supply and signal amplification on the same chip, so that the volume of a functional component is reduced to a greater extent, the whole volume of the pressure sensor is reduced, and meanwhile, the precision and the stability of the pressure sensor are improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A CMOS integrated circuit comprising a DC-DC converter, a voltage reference circuit, and an instrumentation amplifier circuit, the DC-DC converter, the voltage reference circuit, and the instrumentation amplifier circuit integrated on a same chip, wherein:
the input end of the DC-DC converter is connected with the power supply end, and the output end of the DC-DC converter is connected with the input end of the voltage reference circuit and is used for performing voltage conversion on the power supply voltage provided by the power supply end;
the output end of the voltage reference circuit is connected with the power supply input end of the instrument amplifier circuit and the input end of the pressure sensing chip and is used for adjusting the power supply voltage converted by the DC-DC converter to obtain reference voltage meeting preset conditions;
the input end of the instrument amplifier circuit is connected with the output end of the pressure sensing chip and used for receiving the voltage signal sent by the pressure sensing chip and amplifying the voltage signal to obtain a voltage signal meeting the preset requirement, and the voltage signal is obtained by converting the pressure signal by the pressure sensing chip.
2. The CMOS integrated circuit of claim 1, further comprising an RCR filter circuit, wherein the RCR filter circuit and the DC-DC converter are integrated on a same chip, and configured to filter an output voltage of a power supply terminal, wherein an input terminal of the RCR filter circuit is connected to the power supply terminal, and an output terminal of the RCR filter circuit is connected to an input terminal of the DC-DC converter.
3. The CMOS integrated circuit of claim 2, further comprising an anti-reverse diode integrated on the same chip as the DC-DC converter for anti-reverse protection, wherein the anti-reverse diode is disposed between the DC-DC converter and the RCR-type filter circuit.
4. The CMOS integrated circuit of claim 1, further comprising a voltage follower and an amplification bias adjustment circuit, the voltage follower, the amplification bias adjustment circuit, and the instrumentation amplifier circuit integrated on a same chip, wherein:
the input end of the voltage follower is connected with the output end of an external voltage circuit, and the output end of the voltage follower is connected with the input end of the amplification bias adjusting circuit and used for buffering between the external voltage circuit and the amplification bias adjusting circuit;
the output end of the amplification bias adjusting circuit is connected with the input end of the instrument amplifier circuit and used for carrying out offset adjustment on the voltage signal output by the pressure sensing chip.
5. The CMOS integrated circuit of claim 1, further comprising a temperature sensitive diode for measuring temperature of the CMOS integrated circuit to compensate for gain temperature drift according to the temperature measurement result.
6. The CMOS integrated circuit according to claim 1, further comprising an amplification gain adjustment circuit, the amplification gain adjustment circuit being an external circuit connected to the instrumentation amplifier circuit and configured to perform gain adjustment processing on the voltage signal output by the pressure sensing chip.
7. A pressure sensor comprising the CMOS integrated circuit of any one of claims 1 to 6.
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| CN202010850942.4A CN112179528A (en) | 2020-08-21 | 2020-08-21 | CMOS integrated circuit and pressure sensor |
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| CN202010850942.4A CN112179528A (en) | 2020-08-21 | 2020-08-21 | CMOS integrated circuit and pressure sensor |
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