CN112162850A - Memory application method, device, equipment and medium - Google Patents
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Abstract
The application provides a memory application method, which comprises the following steps: receiving a creating instruction of the full-flash thin pool; establishing a full-flash thin pool according to the establishing instruction, and applying for a dynamic memory required by the work of a metadata management module; the full-flash thin pool is a storage pool which is constructed by all solid-state storage media and can create a self-thin volume, and if a dynamic memory is applied, the dynamic memory is allocated to each submodule. Therefore, the method and the device have the advantages that the metadata management module of the full-flash thin pool is required to work only when the storage system needs to create the full-flash thin pool, the memory space required by the metadata management module is dynamic memory, correspondingly, when the storage system does not have the full-flash thin pool, the dynamic memory required by the metadata management module is not required, the waste of the memory space is reduced, and the performance of the storage system is improved. The application also provides a memory application device, electronic equipment and a computer readable storage medium, which have the beneficial effects.
Description
Technical Field
The present application relates to the field of memory allocation technologies, and in particular, to a memory application method, apparatus, device, and medium.
Background
The full-flash thin pool refers to a storage pool which is constructed by using solid-state storage media (solid-state disk SSD) and can be created into a self-thin volume. In the storage function of the full-flash thin pool, the metadata management module is used for managing metadata, and when the system is initialized, the system applies for a memory management space required by the metadata management module during working. However, when the system does not have a full-flash thin pool but only has a normal pool, the memory management space applied by the metadata management module is not used, so that the memory space is wasted, and even the system performance is reduced.
Therefore, how to provide a solution to the above technical problem is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The present application aims to provide a memory application method, a memory application apparatus, an electronic device, and a computer-readable storage medium, which can reduce the waste of memory space and improve the performance of a storage system. The specific scheme is as follows:
the application discloses a memory application method, which comprises the following steps:
receiving a creating instruction of the full-flash thin pool;
creating the full-flash thin pool according to the creating instruction, and applying for a dynamic memory required by the work of a metadata management module; the full flash thin pool is a storage pool that can create self-thin volumes constructed using solid state storage media throughout,
and if the dynamic memory is applied, the dynamic memory is distributed to each submodule.
Optionally, before receiving the instruction for creating the full-flash thin pool, the method further includes:
respectively adding preset information required by the dynamic memory application of the metadata management module at a CSM end and an AGT end of the dynamic memory management module; the preset information comprises a maximum memory to be reserved and the size of an initial reserved memory;
and carrying out initialization registration on the preset information when the system is initialized.
Optionally, after the initialization registration of the preset information is performed during system initialization, the method further includes:
adding first dynamic memory management information at a CSM end of the full-flash thin pool management module; the first dynamic memory management information is used for identifying whether the memory required by the metadata management module is applied or not and the size of the applied memory,
adding second dynamic memory management information at the AGT end of the metadata management module; the second dynamic memory management information includes identification information and allocation information, and the identification information is used for identifying whether the memory required by the metadata management module is applied or not.
Optionally, if the dynamic memory is applied, after the dynamic memory is allocated to each sub-module, the method further includes:
when the dynamic memory is applied, modifying the first dynamic memory management information;
and sending a modification instruction to each node so that the AGT end of each node modifies the second dynamic memory management information.
Optionally, if the dynamic memory is applied, allocating the dynamic memory to each sub-module includes:
obtaining the residual dynamic memory by utilizing a CSM (Carrier sense multiple access) end of the dynamic memory management module;
judging whether the residual dynamic memory is larger than the dynamic memory;
and if the number of the sub-modules is larger than the number of the sub-modules, applying for the dynamic memory required by the work of the metadata management module, and distributing the dynamic memory to each sub-module.
Optionally, the method further includes:
when the full-flash thin pool is deleted, informing the AGT end of each node to modify the second dynamic memory management information;
releasing the dynamic memory allocated to each submodule;
and modifying the first dynamic memory management information according to the released information.
Optionally, when the full-flash thin pool is deleted, notifying the AGT of each node to modify the second dynamic memory management information, where the notifying includes:
when the full-flash thin pool is deleted, triggering a release instruction through a CLI or a GUI;
and informing the AGT end of each node to modify the second dynamic memory management information according to the release instruction.
The application discloses memory application device includes:
the instruction receiving module is used for receiving a creating instruction of the full-flash thin pool;
the application module is used for creating the full-flash thin pool according to the creation instruction and applying for a dynamic memory required by the work of the metadata management module; the full-flash thin pool is a storage pool which is constructed by all solid storage media and can create a self-thin volume;
and the distribution module is used for distributing the dynamic memory to each submodule if the dynamic memory is applied.
The application discloses electronic equipment includes:
a memory for storing a computer program;
and the processor is used for realizing the steps of the memory application method when executing the computer program.
A computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the memory application method as described above.
The application provides a memory application method, which comprises the following steps: receiving a creating instruction of the full-flash thin pool; establishing a full-flash thin pool according to the establishing instruction, and applying for a dynamic memory required by the work of a metadata management module; the full-flash thin pool is a storage pool which is constructed by all solid-state storage media and can create a self-thin volume, and if a dynamic memory is applied, the dynamic memory is allocated to each submodule.
Therefore, the method and the device have the advantages that the metadata management module of the full-flash thin pool is required to work only when the storage system needs to create the full-flash thin pool, the memory space required by the metadata management module is dynamic memory, correspondingly, when the storage system does not have the full-flash thin pool, the dynamic memory required by the metadata management module is not required, the waste of the memory space is reduced, and the performance of the storage system is improved.
The application also provides a memory application device, an electronic device and a computer readable storage medium, which all have the beneficial effects and are not described herein again.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a memory application method according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a memory application device according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The full-flash thin pool refers to a storage pool which is constructed by using solid-state storage media (solid-state disk SSD) and can be created into a self-thin volume. In the storage function of the full-flash thin pool, the metadata management module is used for managing metadata, and when the system is initialized, the system applies for a memory management space required by the metadata management module during working. However, when the system does not have a full-flash thin pool but only has a normal pool, the memory management space applied by the metadata management module is not used, so that the memory space is wasted, and even the system performance is reduced.
Based on the foregoing technical problem, this embodiment provides a memory application method, which can reduce the waste of memory space and improve the performance of a storage system, so as to implement the method, specifically refer to fig. 1, where fig. 1 is a flowchart of a memory application method provided in this embodiment of the present application, and specifically includes:
s101, receiving a creating instruction of the full-flash thin pool;
s102, creating the full-flash thin pool according to the creating instruction, and applying for a dynamic memory required by the work of a metadata management module; the full flash thin pool is a storage pool that can create self-thin volumes constructed using solid state storage media throughout,
and after receiving a creating instruction of the full-flash thin pool, creating the full-flash thin pool, and applying for a dynamic memory required by the work of the metadata management module.
In this embodiment, when the full-flash thin pool is created, the dynamic memory required by the operation of the metadata management module is applied, if the full-flash thin pool is not created, the dynamic memory required by the operation of the metadata management module is not applied, and when the full-flash thin pool is deleted, the previously applied dynamic memory is also released. The waste of memory space is reduced, and the performance of the storage system is improved.
Further, before receiving the instruction for creating the full-flash thin pool, the method further includes: respectively adding preset information required by the dynamic memory application of the metadata management module at a CSM end and an AGT end of the dynamic memory management module; the preset information comprises a maximum memory to be reserved and the size of an initial reserved memory; and initializing and registering the preset information when the system is initialized.
It can be understood that the dynamic memory management module of the storage system in this embodiment is provided with a CSM terminal and an AGT terminal. The CSM side (Control state machine) is represented as a Control state machine of each module in the storage system. The AGT terminal (agent, module terminal) is represented as a module terminal on each node in the storage system. Respectively adding (metadata management module) preset information required by dynamic memory application of an MDM module at a CSM end and an AGT end, wherein the preset information comprises information such as a maximum memory required to be reserved, the size of the initial reserved memory and the like, and performing initialization registration on the information when a system is initialized.
Further, after initializing and registering the preset information during system initialization, the method further includes: adding first dynamic memory management information at a CSM (common sense module) end of a full-flash thin pool management module; the first dynamic memory management information is used for identifying whether a memory required by the metadata management module is applied or not and the size of the applied memory, and second dynamic memory management information is added at an AGT end of the metadata management module; the second dynamic memory management information includes identification information and allocation information, and the identification information is used for identifying whether the memory required by the metadata management module is applied or not.
The method comprises the steps that management information, namely first dynamic memory management information, is added to a full-flash thin pool management module, namely a CSM (sense multiple access) end of the full-flash thin pool management information, and whether a memory required by an MDM (multiple driver multiple module) module is applied or not and the size of the applied memory are identified; and adding information related to the dynamic memory application and allocation condition of the MDM module at the AGT end of the MDM module, identifying whether the memory required by the MDM module is applied or not, and allocating the memory to each submodule for use.
It can be understood that, in this embodiment, the CSM terminal and the AGT terminal are respectively disposed on the full-flash thin pool management module and the MDM module to implement disaster recovery, and when a node fails due to a fault, data recovery can be performed when the node is powered on again according to the stored first dynamic memory management information and the stored second dynamic memory management information, so as to ensure normal operation of the system.
And S103, if the dynamic memory is applied, allocating the dynamic memory to each submodule.
In this embodiment, the dynamic memory strongly applied to is allocated to each sub-module, and the sub-module in this embodiment includes but is not limited to: write cache, read cache, etc. The allocation rule is not limited in this embodiment, and the user can customize the setting as long as the purpose of this embodiment can be achieved. The specific allocation rule may be an average allocation, or may be an allocation according to the application frequency of each sub-module.
Further, if a dynamic memory is applied, allocating the dynamic memory to each sub-module includes:
obtaining the residual dynamic memory by utilizing a CSM (Carrier sense multiple access) end of the dynamic memory management module;
judging whether the residual dynamic memory is larger than the dynamic memory;
and if the number of the sub-modules is larger than the dynamic memory, applying for the dynamic memory required by the work of the metadata management module, and distributing the dynamic memory to each sub-module.
In this embodiment, when the remaining dynamic memory is larger than the required dynamic memory, the dynamic memory can be applied and allocated to each sub-module, and if the remaining dynamic memory is not larger than the required dynamic memory, the system waits, and after releasing the dynamic memory, the system executes the step of acquiring the remaining dynamic memory by using the CSM terminal of the dynamic memory management module until the required dynamic memory can be applied. By the method, the phenomenon that the running speed is low or the running is in a problem caused by directly applying for the residual dynamic memory when the residual dynamic memory is not larger than the required dynamic memory is avoided.
Further, if a dynamic memory is applied, after the dynamic memory is allocated to each sub-module, the method further includes: when the dynamic memory is applied, modifying the first dynamic memory management information; and sending a modification instruction to each node so that the AGT end of each node modifies the second dynamic memory management information.
The first dynamic memory management information and the second dynamic memory management information in the implementation are updated in real time, the latest information stored in the system is ensured, and when a certain node fails due to a fault, the memory can be recovered according to the stored information.
Based on the above technical solution, in this embodiment, only when the storage system is to create the full-flash thin pool, the metadata management module of the full-flash thin pool needs to work, and at this time, the dynamic memory is a memory space required by the metadata management module, and correspondingly, when the storage system does not have the full-flash thin pool, the dynamic memory required by the metadata management module is not applied, so that the waste of the memory space is reduced, and the performance of the storage system is improved.
Further, the method also comprises the following steps: when the full-flash thin pool is deleted, informing the AGT end of each node to modify the second dynamic memory management information; releasing the dynamic memory allocated to each submodule; and modifying the first dynamic memory management information according to the released information.
Further, when the full-flash thin pool is deleted, a release instruction is triggered through a CLI or a GUI; and informing the AGT end of each node to modify the second dynamic memory management information according to the release instruction.
When the full-flash thin pool is deleted, a Command Line processing flow is triggered through a Command Line Interface (CLI) or a Graphical User Interface (GUI), an AGT Interface is called by a CSM to notify an AGT end of each node to modify management information related to an MDM dynamic memory, the dynamic memory allocated to each submodule is released, then memory management information of an MDM module at the CSM end is modified, and the dynamic memory is identified to be released and can be used by other modules.
It can be seen that, in this embodiment, when there is not the full-flash thin pool in the system, the MDM module will not work, so, at this moment, there is no need to apply for the memory space (dynamic memory) required by the MDM module, only when the system is to create the full-flash thin pool, the MDM module of the full-flash thin pool needs to work, just the memory space required by the MDM module needs to be applied, when there is not the full-flash thin pool in the system, then the memory space applied before by the MDM module is released. The waste of memory space is reduced, and the system performance is improved.
Based on any of the above embodiments, this embodiment provides a specific memory application method, which implements dynamic memory application and release, and includes:
the management of the DMM is divided into a CSM end and an AGT end, and the following operations are required for dynamic memory application and release:
1. respectively adding information required by the MDM module dynamic memory application at a CSM end and an AGT end, wherein the information comprises the information of the maximum memory required to be reserved, the size of the initially reserved memory and the like, and initializing and registering the information when a system is initialized;
2. adding first dynamic memory management information at a CSM (sense multiple access) end of the full-flash thin pool management information, and identifying whether a memory required by an MDM (multiple driver multiple module) module is applied or not and the size of the applied memory;
3. adding second dynamic memory management information at an AGT end of the MDM module, wherein the second dynamic memory management information comprises information related to dynamic memory application and allocation conditions of the MDM module, and identifies whether memory required by the MDM module is applied or not and allocates the memory to each submodule for use;
4. when a first full-flash thin pool is created, a command line processing flow is triggered through a CLI or a GUI, a CSM end of a dynamic memory management module inquires and applies for a dynamic memory required by the MDM module, the dynamic memory management information of the MDM module at the CSM end is modified, a mark is applied to the dynamic memory, an AGT end of each node is notified to modify the management information related to the MDM dynamic memory, and the applied dynamic memory is distributed to each submodule, so that the MDM module can work normally;
5. when the last full-flash thin pool is deleted, a command line processing flow is triggered through a CLI or a GUI, a CSM calls an AGT interface to notify the AGT end of each node to modify the management information related to the MDM dynamic memory, the dynamic memory allocated to each submodule is released, then the memory management information of an MDM module at the CSM end is modified, and the fact that the dynamic memory is released is marked and can be used by other modules.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a memory application device provided in an embodiment of the present application, where the memory application device described below and the memory application method described above are referred to in correspondence, and the memory application device includes:
an instruction receiving module 201, configured to receive a creation instruction of a full-flash thin pool;
an application module 202, configured to create the full-flash thin pool according to the creation instruction, and apply for a dynamic memory required by the metadata management module to work; the full-flash thin pool is a storage pool which is constructed by all solid storage media and can create a self-thin volume;
the allocating module 203 is configured to allocate the dynamic memory to each sub-module if the dynamic memory is applied for.
Optionally, the method further includes:
the information adding module is used for respectively adding preset information required by the dynamic memory application of the metadata management module at a CSM end and an AGT end of the dynamic memory management module; the preset information comprises a maximum memory to be reserved and the size of an initial reserved memory;
and the initialization module is used for performing initialization registration on the preset information when the system is initialized.
Optionally, the method further includes:
the first dynamic memory management information adding module is used for adding first dynamic memory management information at a CSM (common sense module) end of the full-flash thin pool management module; the first dynamic memory management information is used for identifying whether the memory required by the metadata management module is applied or not and the size of the applied memory,
the second dynamic memory management information adding module is used for adding second dynamic memory management information at the AGT end of the metadata management module; the second dynamic memory management information includes identification information and allocation information, and the identification information is used for identifying whether the memory required by the metadata management module is applied or not.
Optionally, the method further includes:
the first modification module is used for modifying the first dynamic memory management information after applying for the dynamic memory;
and the second modification module is used for sending a modification instruction to each node so that the AGT end of each node modifies the second dynamic memory management information.
Optionally, the allocating module 203 includes:
the acquisition unit is used for acquiring the residual dynamic memory by utilizing the CSM end of the dynamic memory management module;
the judging unit is used for judging whether the residual dynamic memory is larger than the dynamic memory;
and the distribution unit is used for applying for the dynamic memory required by the work of the metadata management module and distributing the dynamic memory to each submodule if the dynamic memory is larger than the dynamic memory.
Optionally, the method further includes:
the notification module is used for notifying the AGT end of each node to modify the second dynamic memory management information when the full-flash thin pool is deleted;
the release module is used for releasing the dynamic memory distributed to each submodule;
and the third modification module is used for modifying the first dynamic memory management information according to the released information.
Optionally, the notification module includes:
the triggering unit is used for triggering a release instruction through a CLI or a GUI when the full-flash thin pool is deleted;
and the notification unit is used for notifying the AGT end of each node to modify the second dynamic memory management information according to the release instruction.
Since the embodiments of the apparatus portion and the method portion correspond to each other, please refer to the description of the embodiments of the method portion for the embodiments of the apparatus portion, which is not repeated here.
In the following, an electronic device provided by the embodiment of the present application is introduced, and the electronic device described below and the memory application method described above may be referred to correspondingly.
The present embodiment provides an electronic device, including:
a memory for storing a computer program;
and the processor is used for realizing the steps of the memory application method when executing the computer program.
Since the embodiment of the electronic device portion corresponds to the embodiment of the memory application method portion, for the embodiment of the electronic device portion, reference is made to the description of the embodiment of the memory application method portion, and details are not described here again.
The following describes a computer-readable storage medium provided by embodiments of the present application, and the computer-readable storage medium described below and the method described above may be referred to correspondingly.
The present embodiment provides a computer-readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the steps of the memory application method as described above.
Since the embodiment of the computer-readable storage medium portion and the embodiment of the method portion correspond to each other, please refer to the description of the embodiment of the method portion for the embodiment of the computer-readable storage medium portion, which is not repeated here.
The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in Random Access Memory (RAM), memory, Read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
The above detailed description is provided for a memory application method, a memory application apparatus, an electronic device, and a computer-readable storage medium. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A memory application method, comprising:
receiving a creating instruction of the full-flash thin pool;
creating the full-flash thin pool according to the creating instruction, and applying for a dynamic memory required by the work of a metadata management module; the full flash thin pool is a storage pool that can create self-thin volumes constructed using solid state storage media throughout,
and if the dynamic memory is applied, the dynamic memory is distributed to each submodule.
2. The memory application method according to claim 1, wherein before receiving the instruction for creating the full-flash thin pool, the method further comprises:
respectively adding preset information required by the dynamic memory application of the metadata management module at a CSM end and an AGT end of the dynamic memory management module; the preset information comprises a maximum memory to be reserved and the size of an initial reserved memory;
and carrying out initialization registration on the preset information when the system is initialized.
3. The memory application method according to claim 2, wherein after the initialization registration of the preset information is performed during system initialization, the method further comprises:
adding first dynamic memory management information at a CSM end of the full-flash thin pool management module; the first dynamic memory management information is used for identifying whether the memory required by the metadata management module is applied or not and the size of the applied memory,
adding second dynamic memory management information at the AGT end of the metadata management module; the second dynamic memory management information includes identification information and allocation information, and the identification information is used for identifying whether the memory required by the metadata management module is applied or not.
4. The memory application method according to claim 3, wherein if the dynamic memory is applied, after the dynamic memory is allocated to each sub-module, the method further comprises:
when the dynamic memory is applied, modifying the first dynamic memory management information;
and sending a modification instruction to each node so that the AGT end of each node modifies the second dynamic memory management information.
5. The memory application method according to claim 3, wherein the allocating the dynamic memory to each sub-module if the dynamic memory is applied comprises:
obtaining the residual dynamic memory by utilizing a CSM (Carrier sense multiple access) end of the dynamic memory management module;
judging whether the residual dynamic memory is larger than the dynamic memory;
and if the number of the sub-modules is larger than the number of the sub-modules, applying for the dynamic memory required by the work of the metadata management module, and distributing the dynamic memory to each sub-module.
6. The memory application method of claim 4, further comprising:
when the full-flash thin pool is deleted, informing the AGT end of each node to modify the second dynamic memory management information;
releasing the dynamic memory allocated to each submodule;
and modifying the first dynamic memory management information according to the released information.
7. The memory application method according to claim 6, wherein the notifying the AGT of each node of modifying the second dynamic memory management information when the full-flash thin pool is deleted includes:
when the full-flash thin pool is deleted, triggering a release instruction through a CLI or a GUI;
and informing the AGT end of each node to modify the second dynamic memory management information according to the release instruction.
8. A memory application apparatus, comprising:
the instruction receiving module is used for receiving a creating instruction of the full-flash thin pool;
the application module is used for creating the full-flash thin pool according to the creation instruction and applying for a dynamic memory required by the work of the metadata management module; the full-flash thin pool is a storage pool which is constructed by all solid storage media and can create a self-thin volume;
and the distribution module is used for distributing the dynamic memory to each submodule if the dynamic memory is applied.
9. An electronic device, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the memory application method according to any one of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, having stored thereon a computer program which, when being executed by a processor, carries out the steps of the memory application method according to any one of claims 1 to 7.
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