CN112153824A - Ceramic circuit board with thick copper structure and manufacturing method thereof - Google Patents
Ceramic circuit board with thick copper structure and manufacturing method thereof Download PDFInfo
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- CN112153824A CN112153824A CN201910564665.8A CN201910564665A CN112153824A CN 112153824 A CN112153824 A CN 112153824A CN 201910564665 A CN201910564665 A CN 201910564665A CN 112153824 A CN112153824 A CN 112153824A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The invention provides a ceramic circuit board with a thick copper structure and a manufacturing method thereof, comprising the following steps: plating a metal seed layer film on the ceramic substrate; manufacturing an electroplated copper layer on the metal seed layer film; removing the electroplated copper layer in the selective area by etching to form a plurality of copper circuit base layers in the residual area, and laminating the flat plate jig on the ceramic substrate to expose the plurality of copper circuit base layers; filling and laying rheological copper materials on the plurality of copper circuit base layers; and heating the copper material to sinter the copper material on the ceramic substrate to form a plurality of thick copper circuits, so that the thickness of the conductive circuit on the ceramic substrate can reach more than 500 μm. The ceramic circuit board and the manufacturing method can effectively solve the problem of manufacturing a thick copper circuit and can improve the current density bearing capacity of the ceramic circuit board.
Description
Technical Field
The present invention relates to a ceramic circuit board with a thick copper structure and a method for manufacturing the same, and more particularly, to a method for manufacturing a ceramic circuit board with a thick copper structure in a manner that a thick copper layer is formed on an electroplated copper layer by sintering.
Background
In recent years, environmental protection awareness has been raised, and environmental protection industries such as electric vehicles and wind power generators have become one of the major technologies for development. In the development of electric vehicles, the most important parts affecting the efficiency of electric vehicles are battery modules and management battery module systems. The current charging and discharging mode of the electric vehicle determines the charging time and the acceleration efficiency of the electric vehicle. On a certain voltage (V) platform, the power of the whole electric vehicle can be improved by increasing the charging and discharging current. When the charging current demand increases and the size of the circuit board and the conductive thread circuit are reduced, the high current density will cause the circuit elements to generate a large amount of heat energy under the high-power operation. If the circuit board of the power module cannot carry high-Density current and the circuit board itself cannot effectively dissipate heat, the Energy Density (Energy Density) of the battery pack is further improved under the high-Density assembly of the whole battery pack of the electric vehicle, which faces a bottleneck of development. The traditional glass fiber reinforced resin PCB circuit board has poor heat resistance, the thickness of a copper foil circuit is only dozens of microns (mum), and the requirement of carrying large current for charging power is difficult to meet, so that the metalized copper circuit ceramic circuit board with good heat resistance and heat dissipation and high voltage insulation becomes the best choice of power circuit elements. However, the conventional structure and manufacturing technique of various copper circuit ceramic substrate elements have limitations on the thickness of the copper conductive circuit, and cannot meet the application development requirements of ultrahigh charging power for bearing higher current density in the future. Therefore, how to increase the thickness of the copper conductive circuit on the ceramic substrate to more than 500 μm, even up to 1000 μm, is a problem to be solved in the industry.
In the prior art, the common copper wire ceramic circuit board structure and manufacturing technique includes thick film printed sintered copper ceramic substrate process technique, direct copper plating ceramic substrate process technique (DPC) and direct copper plating ceramic substrate process technique (DBC). As shown in fig. 1, in the thick film Printing sintering copper ceramic substrate process technology, a copper paste mixed with glass powder is printed on a ceramic substrate by Screen Printing (Screen Printing), and then sintered to form a copper circuit on the ceramic substrate. However, thick film technology typically produces copper circuit layers no thicker than 30 μm. As shown in fig. 2, in the direct copper plating (DPC) process, a metal seed layer film is sputtered on a ceramic substrate by vacuum deposition, and a copper plating layer with a certain thickness is formed thereon by electroplating, followed by etching to complete the copper circuit. However, this technique typically produces copper circuit thicknesses of no more than 100 μm. As shown in fig. 3, in the direct copper clad ceramic substrate process (DBC) technique, a copper sheet with a certain thickness is directly bonded to a ceramic substrate using an oxygen-containing eutectic liquid of copper, and a proper amount of oxygen is introduced before or during the process of bonding the copper to the ceramic substrate, so that the copper and oxygen form a Cu-O eutectic layer and chemically react with the ceramic substrate to bond the copper to the ceramic substrate. However, the thickness of the copper circuit manufactured by the technology cannot easily reach more than 500 μm.
Therefore, it is necessary to develop a ceramic circuit board with thick copper structure and a method for fabricating the same to solve the application requirement of thick copper ceramic circuit board with copper circuit thickness over 500 μm.
Disclosure of Invention
Accordingly, the present invention is directed to a ceramic circuit board with a thick copper structure and a method for fabricating the same, which can increase the thickness of the copper layer of the circuit to more than 500 μm, thereby solving the problem that the conventional technique cannot fabricate a copper circuit with a copper thickness of more than 500 μm on a ceramic substrate.
In order to achieve the above object, the present invention discloses a ceramic circuit board having a thick copper structure, comprising:
a ceramic substrate having an upper surface with a plurality of conductive traces, wherein the conductive traces are formed by stacking three layers of metal materials, in the following order:
a metal seed layer film of vacuum coating formed on the upper surface;
an electroplated copper layer formed on the metal seed layer film of the vacuum coating; and
a sintered thick copper layer formed on the electroplated copper layer;
wherein the thickness of the conductive lines is not less than 500 μm.
The conductive lines have a minimum spacing therebetween, and the ratio of the minimum spacing to the thicknesses of the conductive lines is less than 2.
Wherein, the material of the ceramic substrate is selected from at least one of the group consisting of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.
Wherein the thickness of the metal seed layer film of the vacuum plating film is not more than 0.2 μm, and the material of the metal seed layer film of the vacuum plating film is one of titanium metal and titanium-tungsten alloy.
Wherein the thickness of the electroplated copper layer is not more than 100 μm.
Wherein, the material of the sintering thick copper layer is a copper alloy doped with silver.
Also discloses a manufacturing method of the ceramic circuit board with the thick copper structure, which is characterized by comprising the following steps:
providing a ceramic substrate;
plating a metal seed layer film on the ceramic substrate by using a vacuum coating mode;
electro-depositing a copper electroplating layer on the metal seed layer film by electroplating;
removing the electroplated copper layer in the selective area by etching so as to form a plurality of copper circuit base layers on the ceramic substrate in the residual area;
providing a flat plate jig and a copper material with rheological property, wherein the flat plate jig is provided with a plurality of through holes;
laminating the flat jig on the ceramic substrate and exposing the plurality of copper circuit base layers;
filling the copper material with rheological property so that the copper material with rheological property is laid on the plurality of copper circuit base layers through the plurality of through holes; and
heating the copper material with rheological property to sinter the copper material with rheological property on the plurality of copper circuit base layers of the ceramic substrate into a plurality of thick copper circuit structures with a conductive circuit thickness, wherein the conductive circuit thickness of the plurality of thick copper circuit structures is not less than 500 mu m.
Wherein, the ratio of the minimum spacing between the thick copper circuit structures to the thickness of the conductive circuit is less than 2.
Wherein, further comprising the following steps:
coarsening the surfaces of the plurality of copper circuit base layers; and
and grinding and flattening the surfaces of the plurality of thick copper circuit structures.
Wherein the ceramic substrate is made of at least one material selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.
Wherein the material of the metal seed layer film is one of titanium and titanium-tungsten alloy, the thickness of the metal seed layer film is not more than 0.2 μm, and the thickness of the electroplated copper layer is not more than 100 μm.
Wherein, in the step of providing the flat jig and the copper material with rheological property, and the flat jig has a plurality of through holes, the copper material is a fine copper powder, and the average particle size (D50) of the fine copper powder is not more than 2 μm.
Wherein the surface of the fine copper powder comprises a silver layer.
Wherein, in the step of providing the flat plate jig and the copper material with rheological property, and the flat plate jig is provided with a plurality of through holes, the copper material with rheological property is a copper slurry, the copper slurry is formed by uniformly mixing fine copper powder, a polymer and an organic solvent, and the average particle size (D50) of the fine copper powder is not more than 2 μm.
Wherein the surface of the fine copper powder comprises a silver layer.
In summary, the ceramic circuit board with thick copper structure and the manufacturing method thereof of the present invention utilize copper Powder (Cu Powder) filling or copper Paste (Cu Paste) coating on the copper circuit substrate of the prefabricated copper-electroplating ceramic circuit board and heat-sintering the copper Powder to form the thick copper circuit structure. The thick copper circuit of the ceramic substrate manufactured by the structure and the manufacturing method can increase the thickness of the copper layer of the circuit to more than 500 mu m, and solves the problem that the prior art can not manufacture the thick copper circuit with the copper thickness of more than 500 mu m on the ceramic substrate.
Drawings
FIG. 1: the structure of the ceramic substrate circuit in the prior art is shown.
FIG. 2: the structure of the ceramic substrate circuit in the prior art is shown.
FIG. 3: the structure of the ceramic substrate circuit in the prior art is shown.
FIG. 4: a flow chart of steps of a method for fabricating a ceramic circuit board having a thick copper structure according to an embodiment of the invention is shown.
FIG. 5: the structure of the ceramic substrate including the metal seed layer film and the electroplated copper layer according to the present invention is schematically shown.
FIG. 6: the structure of the ceramic substrate of the copper circuit substrate according to the present invention is shown schematically.
Fig. 7A to 7B: the method for forming a copper circuit substrate with rheological property according to the present invention is illustrated.
FIG. 8: the present invention is illustrated in a schematic structural diagram of a ceramic circuit board with a thick copper structure according to an embodiment of the present invention.
FIG. 9: a top view of the copper circuit-based ceramic substrate according to fig. 6 is shown.
FIG. 10: a flow chart of steps of a method for fabricating a ceramic circuit board having a thick copper structure according to an embodiment of the invention is shown.
FIG. 11: a flow chart of steps of a method for fabricating a ceramic circuit board having a thick copper structure according to an embodiment of the invention is shown.
FIG. 12: a schematic structural diagram of a ceramic circuit board with a thick copper structure according to an embodiment of the invention is shown.
FIG. 13: the present invention is illustrated in a schematic structural diagram of a ceramic circuit board with a thick copper structure according to an embodiment of the present invention.
Detailed Description
In order that the advantages, spirit and features of the invention will be readily understood and appreciated, embodiments thereof will be described in detail hereinafter with reference to the accompanying drawings. It is to be understood that these embodiments are merely representative of the present invention, and that the specific methods, devices, conditions, materials, etc., described herein are not intended to limit the present invention or the corresponding embodiments. Also, the devices shown in the drawings are merely for relative positional representation and are not drawn to scale as they are actually drawn.
In the description of the present invention, it is to be understood that the terms "longitudinal, transverse, upper, lower, front, rear, left, right, top, bottom, inner, outer" and the like refer to orientations or positional relationships based on those shown in the drawings, which are merely for convenience of description and simplicity of description, and do not indicate that the described devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Referring to fig. 4 to 8, fig. 4 is a flow chart illustrating a method for manufacturing a ceramic circuit board 1 having a thick copper structure according to an embodiment of the present invention, fig. 5 is a schematic structural view illustrating a ceramic substrate 11 including a metal seed layer film 12 and an electroplated copper layer 13 according to the present invention, fig. 6 is a schematic structural view illustrating a copper circuit base 14 according to the present invention, fig. 7A to 7B are schematic structural views illustrating a step of spreading a copper material 15 having rheological property on the copper circuit base 14 according to the present invention, and fig. 8 is a schematic structural view illustrating the ceramic circuit board 1 having a thick copper structure according to an embodiment of the present invention. The method for manufacturing the ceramic circuit board 1 having the thick copper structure shown in fig. 4 can be achieved by the schematic diagrams of fig. 5 to 8.
In this embodiment, the method for manufacturing the ceramic circuit board 1 having the thick copper structure may include the following steps: step S1: providing a ceramic substrate 11; step S2: plating a metal seed layer film 12 on the ceramic substrate 11 by using a vacuum coating mode; step S3: electro-depositing a copper electroplating layer 13 on the metal seed layer film 12 by electroplating; step S4: removing the electroplated copper layer 13 in selective areas by etching, so that a plurality of copper circuit base layers 14 are formed on the ceramic substrate 11 in the remaining areas; step S5: providing a flat plate jig 2 and a copper material 15 with rheological property, wherein the flat plate jig 2 is provided with a plurality of through holes 21; step S6: laminating the flat jig 2 on the ceramic substrate 11 and exposing the plurality of copper circuit base layers 14; step S7: filling the copper material 15 with rheological property so that the copper material 15 with rheological property is laid on the plurality of copper circuit base layers 14 through the plurality of through holes 21; and step S8: the copper material 15 with rheological property is heated to make the copper material 15 with rheological property form a plurality of thick copper circuit structures 16 with a conductive circuit thickness on the ceramic substrate 11 through a sintering process, so that the conductive circuit thickness of the plurality of thick copper circuit structures 16 is not less than 500 μm.
In practice, the ceramic substrate11 is selected from alumina (Al)2O3) Aluminum nitride (AlN), silicon nitride (Si)3N4) At least one of beryllium oxide (BeO), but not limited thereto. As shown in fig. 5, the ceramic substrate 11 includes an upper surface 111 and a lower surface 112. The metal seed layer film 12 is formed on the upper surface 111 of the ceramic substrate 11 by vacuum deposition. In practice, the vacuum coating may be a layer of titanium metal (Ti) or titanium tungsten alloy film by Sputtering (Sputtering) or evaporation (Deposition).
In addition, the electroplated copper layer 13 is electrodeposited on the metal seed layer film 12 by electroless plating. Therefore, the metal seed layer film 12 and the copper electroplating layer 13 are both plated on the upper surface 111 of the ceramic substrate 11, and the metal seed layer film 12 is interposed between the ceramic substrate 11 and the copper electroplating layer 13. Therefore, the metal seed layer film 12 is formed on the ceramic substrate 11 and then the copper electroplating layer 13 is formed, so as to form the arrangement order (from top to bottom) of the copper electroplating layer 13, the metal seed layer film 12 and the ceramic substrate 11, or the arrangement order (from bottom to top) of the ceramic substrate 11, the metal seed layer film 12 and the copper electroplating layer 13. Since ceramic materials have a low coefficient of thermal expansion, copper materials have a high coefficient of thermal expansion (16.510)-6and/K), therefore, the material of the metal seed layer film 12 must have good bonding with both the ceramic substrate material and the copper material in addition to serving as the conductive seed layer during copper electroplating, and the material of the metal seed layer film 12 can be selected from metal materials with thermal expansion coefficients between those of the ceramic material and the copper material. In one embodiment, the material of the metal seed layer film 12 may be titanium metal or titanium-tungsten alloy, but is not limited thereto in practice. The linear thermal expansion coefficient of the titanium material is 8.410-6and/K, therefore, the metal seed layer film 12 can ensure that the copper electroplating layer 13 can be bonded to the ceramic substrate 11 without peeling. Since the metal seed layer film 12 enables easier bonding between the ceramic substrate 11 and the copper electroplating layer 13 and reduces the difference in the thermal expansion coefficient of the interface between the ceramic substrate and the copper electroplating layer, in one embodiment, the thickness of the vacuum-coated metal seed layer film 12 is not greater than 0.2 μm (200 nm). In one embodiment, the metal seed layer is vacuum sputtered (Supperti)ng) and vacuum evaporation (Deposition).
In practice, the main function of the metal seed layer film is to serve as a cathode during electroplating so that copper ions can be electrodeposited to form an electroplated copper layer with a certain thickness on the ceramic substrate, so as to serve as a copper circuit base layer for sintering the thick copper layer. Because the thermal expansion coefficient of the titanium or the titanium-tungsten alloy is between that of the ceramic substrate material and that of the copper, the copper circuit and the ceramic substrate can be prevented from being peeled off in a high-temperature state.
Please refer to fig. 6 and fig. 9. Fig. 9 shows a top view of the copper circuit base layer 14 according to fig. 6. As shown in fig. 6, after the ceramic substrate 11 is plated with the metal seed layer film 12 and the copper electroplating layer 13, the copper electroplating layer 13 is selectively removed from a partial region of the ceramic substrate 11 by etching, so that the remaining copper electroplating layer 13 forms a plurality of copper circuit base layers 14 on the ceramic substrate 11.
Please refer to fig. 7A, fig. 7B and fig. 8 again. As shown in fig. 7A, after the copper circuit substrate 14 is formed on the ceramic substrate 11, the flat jig 2 is stacked on the ceramic substrate 11 and the copper circuit substrate 14 is exposed through the through hole 21. The flat jig 2 is disposed on the ceramic substrate 11 on the same side as the copper circuit substrate 14.
As shown in fig. 7B, after the flat jig 2 is disposed on the ceramic substrate 11, the rheological copper material 15 is filled on the copper circuit substrate 14 through the through hole 21 of the flat jig 2. in one embodiment, the rheological copper material 15 may be a copper powder. In practice, the copper powder can be filled into the copper circuit substrate 14 through the through holes 21 of the flat jig 2. In this particular example, the average particle size of the copper powder is less than 2 μm.
In another embodiment, the copper material 15 with rheological properties may be a copper slurry. In practice, the copper paste may be coated on the copper circuit substrate 14 by means of Stencil Printing (Stencil Printing) by a doctor blade. Since the flat jig 2 only contacts the ceramic substrate 11 and does not contact the copper circuit substrate 14, when the scraper applies the copper paste from one side of the hollow flat jig 2 to the opposite side, the copper paste falls from the plurality of through holes 21 of the flat jig 2 and is applied to the copper circuit substrate 14. The copper slurry is prepared by uniformly mixing copper powder, a polymer and an organic solvent.
In an embodiment of the present invention, the copper material with rheological property, whether copper powder or copper paste, is easy to fill into the through hole of the flat jig due to its rheological property and is laid on the copper circuit substrate for sintering operation. In addition, because the particle size of the copper powder is small, the surface energy of the particles is large, the liquid phase sintering is easy, and the sintered thick copper structure has good compactness.
As shown in fig. 8, after the rheological copper material is filled on the copper circuit base layer, the copper material is heated to sinter the copper material on the ceramic substrate 11 to form a plurality of thick copper circuit structures 16. In practice, the copper powder is sintered and interfused with the electroplated copper layer 13 to form a thick copper circuit structure 16 having a conductive trace thickness (T). In the present embodiment, the thick copper circuit structure 16 has a conductive line thickness T including the metal seed layer film 12 and the copper electroplating layer 13, and the conductive line thickness T is not less than 500 μm. Since the thickness of the conductive traces of the thick copper circuit structure 16 of the present invention can exceed the reach of the conventional art, the ceramic substrate thick copper circuit structure 1 manufactured by the above steps can bear higher current density.
Please refer to fig. 7A and fig. 7B again. The flat jig 2 may have a jig thickness, and the filling thickness of the copper material 15 having rheological property may be hollowed out by the jig thickness of the flat jig 2. When the copper material 15 with rheological property is the above-mentioned copper paste, further, during the sintering process of the copper paste, the thickness of the copper paste will shrink due to the volatilization of the organic solvent and the removal of the polymer, so the thickness of the flat panel jig 2 and the thickness of the copper paste coating are larger than 500 μm. The thickness of copper after sintering depends on the thickness of the jig and the Solid Content (Solid Content) of the copper slurry. For example, the thickness of the flat jig 2 and the thickness of the copper paste coating are 700 μm, and when the copper paste is heated, baked and sintered, the polymer volatilized from the organic solvent in the copper paste is removed and the copper powder is sintered and shrunk by 20%, and at this time, the thickness of the conductive layer of the thick copper circuit structure 16 formed after sintering is 560 μm, which may be larger than 500 μm. In addition, when the rheological copper material 15 is the aforementioned fine copper powder, and the copper powder is filled into the through hole 21 of the flat jig 2 and laid on the copper circuit substrate, the flat jig 2 may further include a press-down structure for pressing the copper powder onto the copper circuit substrate from above the through hole 21, so that the copper powder is interfused with the electroplated copper layer 13 on the copper circuit substrate when the copper powder is sintered. Because the copper powder has better compactness when being sintered under the condition of being pressed, the other flat plate jig can be pressed on the flat plate jig. In the process that the pressing structure compresses tightly the copper powder, the thickness that the copper powder laid on the copper circuit basic unit can diminish, therefore, the tool thickness of dull and stereotyped tool 2 and the thickness that the copper powder was filled will be greater than the thickness of thick copper circuit structure after the sintering.
In the embodiment of the invention, the sintered thick copper layer structure is formed by directly sintering fine copper powder or sintering copper powder obtained by heating and baking copper slurry to remove organic solvent and polymer, wherein the copper powder is ball-like pure copper powder with average particle size (D50) less than 2 μm. In another embodiment, the sintered copper powder may be a flake-type copper powder having a thickness of only tens of nanometers to hundreds of nanometers. In another embodiment, the sintered copper powder may be a fine copper powder comprising a layer of silver (Ag) on the surface. The thickness of the silver layer may be only a few nanometers to tens of nanometers. The copper powder with the silver layer on the surface can avoid the oxidation of the copper powder and can also enable the sintered thick copper layer structure to have better compactness and conductivity. The thick copper structure formed by sintering the copper powder containing silver layer on the surface is a copper alloy containing trace silver component.
In addition, in practice, the thickness of the flat jig 2 and the copper material 15 with rheological property is not limited to the aforementioned embodiment, and the thickness of the flat jig 2 and the thickness of the copper material 15 can also be adjusted according to the requirement of the thick copper circuit structure. Since the flat jig 2 is disposed on the ceramic substrate 11, the flat jig 2 is also disposed in the gap region between the copper circuit substrates, and thus, when the ceramic substrate 11 containing the rheological copper paste 15 is sintered to form the thick copper circuit structure, there is a gap (W) between the thick copper circuit structures. In one embodiment, the ratio of the spacing (W) between the thick copper circuit structures to the conductive line thickness (T) is less than 2. Thus, the ceramic substrate having a thick copper circuit structure may be a narrow pitch thick copper structure ceramic circuit board element. Since the conventional copper-clad ceramic substrate process (DPC) and direct copper-clad ceramic substrate process (DBC) are used to fabricate the copper circuit ceramic circuit board elements, the copper circuit is etched by Chemical Etching (Chemical Etching). However, the minimum pitch of the etched lines is limited by the thickness of the copper circuit, and the ratio of the minimum pitch to the thickness of the copper circuit must be greater than 2. Therefore, the manufacturing method of the ceramic circuit board with the thick copper structure can be used for manufacturing the circuit with the narrow copper space without the limitation that the small space and the thickness ratio of the copper circuit are more than 2.
Further, the material of the flat jig 2 may be graphite. Generally, the copper paste is mostly laid in a printing manner, and a common printing manner is steel plate printing. When the copper material 15 with rheological property is copper powder or copper slurry, since both the copper slurry and the copper powder have rheological property, after the copper material 15 with rheological property is laid on the copper circuit base layer, the flat jig 2 and the copper material 15 with rheological property need to be sintered together to maintain the shape required by the thick copper circuit. However, during the sintering process of the copper material 15, the copper material is easily adhered to the steel plate, and thus, when the flat jig 2 is removed from the ceramic substrate 11, the sintered thick copper circuit structure is damaged. When the flat jig 2 is made of graphite, the copper material is not easily adhered to the graphite plate, so that the shape of the thick copper circuit structure can be maintained, and the process efficiency is further increased.
Please refer to fig. 6 and fig. 10. Fig. 10 is a flow chart illustrating the steps of a method for manufacturing a ceramic circuit board 1 having a thick copper structure according to an embodiment of the present invention. The difference between the present embodiment and the previous embodiment is that the method for manufacturing the ceramic circuit board 1 having the thick copper structure further comprises the following steps: step S9: the surface of the plurality of copper circuit base layers 14 is roughened. In practice, after the copper circuit substrate 14 is formed on the ceramic substrate 11, the copper slurry is coated on the copper electroplating layer 13 of the copper circuit substrate 14. In order to increase the bonding capability between the copper circuit substrate 14 and the sintered copper structure, the surface of the copper circuit substrate 14 is roughened, so that the surface of the electroplated copper layer 13 of the copper circuit substrate 14 has an irregular shape, thereby increasing the contact area between the electroplated copper layer 13 and the sintered copper structure. Since the function of the electroplated copper layer 13 is to sinter the copper circuit base layer of the thick copper structure, the thick copper circuit structure is formed. In one embodiment, the thickness of the electroplated copper layer 13 is no greater than 100 μm.
Please refer to fig. 11 and 12. Fig. 11 is a flow chart showing steps of a method for manufacturing a ceramic circuit board 1 having a thick copper structure according to an embodiment of the present invention, and fig. 12 is a schematic structural diagram of a thick copper circuit structure 16 according to an embodiment of the present invention. The difference between the present embodiment and the previous embodiment is that the method for manufacturing the ceramic circuit board 1 having the thick copper structure further comprises the following steps: step S10: the surfaces of the plurality of thick copper circuit structures 16 are polished flat. When copper powder or copper paste is heated and sintered, the surface is uneven due to material shrinkage. Therefore, after the copper powder or the copper slurry is heated and sintered to form the thick copper circuit structure 16, the surface of the thick copper circuit structure 16 is polished and leveled to improve the uniformity of the thickness of the copper circuit and ensure that the passing current density is more uniform.
Please refer to fig. 13. Fig. 13 is a schematic structural diagram of a ceramic circuit board 5 having a thick copper structure according to an embodiment of the invention. Another aspect of the present invention is to provide a ceramic circuit board 5 having a thick copper structure, which includes a ceramic substrate 51. The ceramic substrate 51 has an upper surface 511, and the upper surface 511 has a plurality of conductive traces 56, wherein the plurality of conductive traces 56 are stacked by three layers of metal materials, which are a vacuum-plated metal film 52, a copper-plated layer 53 and a thick copper-sintered layer 54 in sequence. A vacuum-plated metal seed layer film 52 is formed on the upper surface 511, an electroplated copper layer 53 is formed on the metal seed layer film 52, and a sintered thick copper layer 54 is formed on the electroplated copper layer 53. Wherein the total thickness of the conductive circuit is not less than 500 μm. Please note that, the structures and functions of the ceramic substrate 51, the metal seed layer film 52, the copper electroplating layer 53 and the thick copper sintering layer 54 in the present embodiment are substantially the same as those of the ceramic substrate, the metal seed layer film, the copper electroplating layer and the thick copper sintering layer in the previous embodiment, and are not repeated herein. The functions, materials and structures of the copper powder and the copper paste of the sintered thick copper layer 54 formed by sintering are substantially the same as those of the copper powder and the copper paste of the previous embodiment, and are not described herein again.
In summary, the ceramic circuit board with thick copper structure and the manufacturing method thereof of the present invention can utilize an electroplating method to electroplate a copper layer on a ceramic substrate, and then sinter copper powder or copper paste to form a thick copper circuit structure with a conductive line thickness exceeding 500 μm, so that the manufacturing of the ceramic circuit board bearing ultrahigh current density can be realized.
The above detailed description of the preferred embodiments is intended to more clearly illustrate the features and spirit of the present invention, and is not intended to limit the scope of the present invention by the preferred embodiments disclosed above. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the scope of the claims. The scope of the claims is thus to be accorded the broadest interpretation so as to encompass all such modifications and equivalent arrangements as is within the scope of the appended claims.
Claims (15)
1. A ceramic circuit board having a thick copper structure, comprising:
a ceramic substrate having an upper surface with a plurality of conductive traces, wherein the conductive traces are formed by stacking three layers of metal materials, in the following order:
a metal seed layer film of vacuum coating formed on the upper surface;
an electroplated copper layer formed on the metal seed layer film of the vacuum coating; and
a sintered thick copper layer formed on the electroplated copper layer;
wherein the thickness of the conductive lines is not less than 500 μm.
2. The ceramic circuit board with a thick copper structure of claim 1, wherein said conductive traces have a minimum pitch therebetween, and a ratio of said minimum pitch to a thickness of said conductive traces is less than 2.
3. The ceramic circuit board with thick copper structure of claim 1, wherein the ceramic substrate is made of at least one material selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.
4. The ceramic circuit board with thick copper structure as claimed in claim 1, wherein the thickness of the metal seed layer film of the vacuum plating film is not more than 0.2 μm, and the material of the metal seed layer film of the vacuum plating film is one of titanium metal and titanium tungsten alloy.
5. The ceramic circuit board having a thick copper structure of claim 1, wherein the thickness of the electroplated copper layer is not more than 100 μm.
6. The ceramic circuit board with thick copper structure as claimed in claim 1, wherein the material of said sintered thick copper layer is a silver-doped copper alloy.
7. A method for manufacturing a ceramic circuit board with a thick copper structure is characterized by comprising the following steps:
providing a ceramic substrate;
plating a metal seed layer film on the ceramic substrate by using a vacuum coating mode;
electro-depositing a copper electroplating layer on the metal seed layer film by electroplating;
removing the electroplated copper layer in the selective area by etching so as to form a plurality of copper circuit base layers on the ceramic substrate in the residual area;
providing a flat plate jig and a copper material with rheological property, wherein the flat plate jig is provided with a plurality of through holes;
laminating the flat jig on the ceramic substrate and exposing the plurality of copper circuit base layers;
filling the copper material with rheological property so that the copper material with rheological property is laid on the plurality of copper circuit base layers through the plurality of through holes; and
heating the copper material with rheological property to sinter the copper material with rheological property on the plurality of copper circuit base layers of the ceramic substrate into a plurality of thick copper circuit structures with a conductive circuit thickness, wherein the conductive circuit thickness of the plurality of thick copper circuit structures is not less than 500 mu m.
8. The method of claim 7, wherein a ratio of a minimum pitch between the plurality of thick copper circuit structures to a thickness of the conductive trace is less than 2.
9. The method of claim 7, further comprising the steps of:
coarsening the surfaces of the plurality of copper circuit base layers; and
and grinding and flattening the surfaces of the plurality of thick copper circuit structures.
10. The method as claimed in claim 7, wherein the ceramic substrate is made of at least one material selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, and beryllium oxide.
11. The method as claimed in claim 7, wherein the metal seed layer film is made of one of titanium and titanium-tungsten alloy, the thickness of the metal seed layer film is not greater than 0.2 μm, and the thickness of the electroplated copper layer is not greater than 100 μm.
12. The method as claimed in claim 7, wherein in the step of providing the flat jig with the rheological copper material and the flat jig with a plurality of through holes, the copper material is a fine copper powder, and the average particle size (D50) of the fine copper powder is not greater than 2 μm.
13. The method of claim 12, wherein the surface of the fine copper powder comprises a silver layer.
14. The method as claimed in claim 7, wherein in the step of providing the flat jig and the copper material with rheological property, and the flat jig has a plurality of through holes, the copper material with rheological property is a copper slurry, the copper slurry is formed by uniformly mixing a fine copper powder, a polymer and an organic solvent, and the average particle size (D50) of the fine copper powder is not greater than 2 μm.
15. The method of claim 14, wherein the surface of the fine copper powder comprises a silver layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910564665.8A CN112153824A (en) | 2019-06-27 | 2019-06-27 | Ceramic circuit board with thick copper structure and manufacturing method thereof |
| TW109119676A TW202101686A (en) | 2019-06-27 | 2020-06-11 | A ceramic circuit board with thick copper structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910564665.8A CN112153824A (en) | 2019-06-27 | 2019-06-27 | Ceramic circuit board with thick copper structure and manufacturing method thereof |
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| CN112153824A true CN112153824A (en) | 2020-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910564665.8A Pending CN112153824A (en) | 2019-06-27 | 2019-06-27 | Ceramic circuit board with thick copper structure and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN112153824A (en) |
| TW (1) | TW202101686A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115124362A (en) * | 2022-06-20 | 2022-09-30 | 昆明冶金研究院有限公司北京分公司 | Ceramic copper-clad plate and preparation method thereof |
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| US6074893A (en) * | 1993-09-27 | 2000-06-13 | Sumitomo Metal Industries, Ltd. | Process for forming fine thick-film conductor patterns |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202101686A (en) | 2021-01-01 |
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