CN112151638B - Photosensitive semiconductor structure, photosensitive waveband adjusting method thereof and photoelectric device formed by photosensitive semiconductor structure - Google Patents
Photosensitive semiconductor structure, photosensitive waveband adjusting method thereof and photoelectric device formed by photosensitive semiconductor structure Download PDFInfo
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- CN112151638B CN112151638B CN202010827989.9A CN202010827989A CN112151638B CN 112151638 B CN112151638 B CN 112151638B CN 202010827989 A CN202010827989 A CN 202010827989A CN 112151638 B CN112151638 B CN 112151638B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 36
- 238000011282 treatment Methods 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052796 boron Inorganic materials 0.000 claims abstract description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 19
- 239000011574 phosphorus Substances 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- -1 phosphorus ions Chemical class 0.000 claims 1
- 230000008033 biological extinction Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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Abstract
The invention relates to a photosensitive semiconductor structure, a photosensitive waveband adjusting method thereof and a photoelectric device formed by the photosensitive semiconductor structure. A method of adjusting a photosensitive band of a photosensitive semiconductor structure, comprising: the photosensitive semiconductor structure comprises a substrate and a photosensitive layer; subjecting the photosensitive layer to at least one of a treatment a or a treatment b, wherein: and (b) processing a: annealing treatment, wherein the annealing temperature is 750-1200 ℃, and the photosensitive waveband is adjusted by controlling the annealing temperature and/or time; and (b) processing: doping boron and/or phosphorus, and adjusting the photosensitive waveband by controlling the doping proportion of the boron and/or the phosphorus. The invention can adjust the refractive index and extinction coefficient of the photosensitive layer through annealing or doping treatment, thereby adjusting the photosensitive wave band and expanding the type and application range of the photosensitive device.
Description
Technical Field
The invention relates to the field of light sensing devices, in particular to a light sensing semiconductor structure, a light sensing waveband adjusting method thereof and a photoelectric device formed by the light sensing semiconductor structure.
Background
A photodetector is a device that converts an optical signal into an electrical signal. The method has wide application, for example, the method is applied to the fields of high-energy physics, space physics, security inspection, medical imaging and the like.
Because of the photo detector, a photo sensing area is needed to receive the optical signal according to the device requirement and convert the optical signal into the required electrical signal. Therefore, it is very important to select a specific wavelength band of light received by the light sensing area.
Some of the photodetectors use silicon oxide to select the wavelength band of the optical signal, and the physical and chemical properties of the silicon oxide layer are specific, so that the wavelength band of the optical signal is also specific and cannot be adjusted arbitrarily.
Disclosure of Invention
The invention mainly aims to provide a method for adjusting the photosensitive waveband of a photosensitive semiconductor structure, which can adjust the refractive index and extinction coefficient of a photosensitive layer through annealing or doping treatment so as to adjust the photosensitive waveband and expand the type and application range of a photosensitive device.
It is another object of the present invention to provide a photosensitive semiconductor structure obtained by the above method, and an optoelectronic device comprising the same, including a typical photodetector.
In order to achieve the above purpose, the invention provides the following technical scheme:
a method of adjusting a photosensitive band of a photosensitive semiconductor structure, comprising:
the photosensitive semiconductor structure comprises a substrate and a photosensitive layer;
subjecting the photosensitive layer to at least one of a treatment a or a treatment b, wherein:
and (b) processing a: annealing treatment, wherein the annealing temperature is 750-1200 ℃, and the photosensitive waveband is adjusted by controlling the annealing temperature and/or time;
and (b) processing: doping boron and/or phosphorus, and adjusting the photosensitive waveband by controlling the doping proportion of the boron and/or the phosphorus.
In the method, the light sensitive layer is annealed or doped, the refractive index and the extinction coefficient of the light sensitive layer change, and the induced light wave band changes accordingly. The invention adjusts the photosensitive wave band based on the principle, and realizes the purpose of expanding the type and the application range of the photosensitive device.
Generally, the higher the annealing temperature or the longer the annealing time, the higher the compactness of the oxide layer and the smaller the adjustable optical band range, and for this reason, the duration of the annealing temperature should be properly selected.
In addition, the annealing treatment is carried out after the photosensitive layer is formed; the doping with boron and/or phosphorus may be performed after the formation of the photosensitive layer or during the formation of the photosensitive layer, depending on whether the formation process of the photosensitive layer allows simultaneous ion doping.
The invention also provides a photosensitive semiconductor structure obtained by the method and a photoelectric device composed of the photosensitive semiconductor structure, including a typical photoelectric detector.
Compared with the prior art, the invention achieves the following technical effects:
(1) the photosensitive wave band of the photosensitive semiconductor structure is adjusted more easily and conveniently, and the adjustment can be realized without changing raw materials;
(2) the adjustable range of the photosensitive wave band is wide, and the adjusting means is diversified;
(3) the superposition of the thermal oxidation growth silicon oxide and the PECVD deposition silicon oxide not only achieves the purpose of few interface defects between the photosensitive layer and the substrate, but also meets the requirement of adjustable optical waveband.
Drawings
Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.
FIG. 1 is a diagram of a field oxide layer grown on a silicon substrate;
FIG. 2 is a diagram illustrating the etching of the structure of FIG. 1 to form a photosensitive region;
FIG. 3 is a graph of the photosensitive region of FIG. 2 after deposition of a gate oxide layer;
FIG. 4 is a graph of the topography after depositing a conditioning oxide layer on the gate oxide layer of FIG. 3;
reference numerals:
1-silicon substrate, 2-field oxide layer, 3-photosensitive region, 4-gate oxide layer and 5-regulating oxide layer.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Taking a typical photodetector as an example, the formation process of the photosensitive semiconductor structure in the device is as follows:
a field oxide layer 2 is grown on a silicon substrate 1 (or a sapphire substrate, etc.) to form the shape as shown in fig. 1, and then a photosensitive area 3 is etched as required to obtain the shape as shown in fig. 2.
A gate oxide layer 4, typically a silicon dioxide layer, is then grown in the photosensitive region to form the topography shown in figure 3. The step can be used as a basic layer for adjusting the optical band to carry out annealing treatment or doping treatment, but the defect at the interface of the gate oxide layer and the bottom layer is serious easily, and the electrical property is not favorably kept.
For this purpose, a regulating oxide layer 5 is also grown on the gate oxide layer to obtain the morphology shown in fig. 4. During or after the process, the photosensitive wavelength band can be adjusted by controlling the processing means for adjusting the oxide layer 5 and adjusting the photosensitive wavelength band, either or both of the following two methods can be adopted:
a, processing a, annealing, wherein the annealing temperature is 750-1200 ℃, and the photosensitive waveband is adjusted by controlling the annealing temperature and/or time;
and b, doping boron and/or phosphorus, and adjusting the photosensitive wave band by controlling the doping proportion of the boron and/or the phosphorus.
In the above scheme, if the photosensitive structure is used for manufacturing other devices, other processes may be required before forming the field oxide layer. Taking the stacked photodiode as an example, the substrate is repeatedly doped and photoetched before the field oxide layer is formed.
In the above scheme, in order to reduce the defects at the interface of the layer as much as possible, the density of the gate oxide layer should be greater than the density of the adjusting oxide layer, and different deposition means can be adopted to grow the two-layer structure to meet the above requirements. For example, the gate oxide layer grown by a thermal oxidation mode has good repeatability and strong stability, and has few interface defects with a silicon substrate, thereby ensuring the electrical characteristics of the device; the adjusting oxide layer is grown by means of PECVD (plasma enhanced chemical vapor deposition), and the silicon oxide layer is used for adjusting the wave band and the intensity of a received optical signal.
The above scheme is only the basic requirement of the invention for adjusting the sensory wave band, and in practical application, the invention has more embodiments according to different situations.
In some embodiments, according to the above method, after the gate oxide layer and the adjusting oxide layer are sequentially deposited in the photosensitive region, the adjusting oxide layer is annealed, the annealing temperature is adjusted within the range of 750-.
When the oxide layer is adjusted to be silicon dioxide, on one hand, the higher the annealing temperature is, the more compact the oxide layer is relatively, and the shorter the wavelength is, the stronger the penetrating power is; on the other hand, the longer the annealing time is, the more compact the oxide layer is, the shorter the wavelength is, the stronger the penetrating power is; the annealing temperature and duration can be adjusted according to the above characteristics.
In addition, the annealing treatment can adopt spike annealing or high-temperature furnace tube annealing.
In some embodiments, in the above method, when depositing silicon dioxide by PECVD after depositing a gate oxide layer on the photosensitive region, in addition to supplying a silicon source and a reaction gas, a precursor of boron B and phosphorus P elements is supplied, or the silicon source itself contains boron B and phosphorus P elements. The oxide layer deposited by the process completes the doping of boron B and phosphorus P, and the optical band is adjusted by controlling the proportion of doping elements in the deposition process.
In general, the larger the total doping ratio of boron B and phosphorus P is, the smaller the refractive index becomes, and the correspondingly selected wavelength becomes larger, according to which the doping ratio can be adjusted.
In some embodiments, according to the above method, after the gate oxide layer is deposited in the photosensitive region, the gate oxide layer is annealed, the annealing temperature is adjusted within the range of 750-.
In some embodiments, according to the above method, after the gate oxide is deposited on the photosensitive region, ion implantation is performed, the ion source is a precursor of boron B and phosphorus P, and the energy and dosage of the ion implantation are determined according to the requirement.
In some embodiments, the gate oxide is deposited in the photosensitive region, followed by ion implantation and then annealing, according to the methods described above. The ion source is the precursor of boron B and phosphorus P elements during implantation, and the energy and dosage of ion implantation are determined according to the requirement. The annealing temperature is adjusted within the range of 750 ℃ and 1200 ℃, and the annealing time is adjusted randomly. The scheme adopts two treatments, the adjustable range of the wave band can be enlarged, and meanwhile, some defects generated during ion implantation can be repaired through an annealing process, so that the electrical characteristics of the device are improved.
In some embodiments, according to the above method, when depositing silicon dioxide by PECVD after depositing a gate oxide layer on a photosensitive region, precursors of boron B and phosphorus P elements are supplied in addition to a silicon source and a reaction gas, or the silicon source itself contains boron B and phosphorus P elements; and then annealing treatment is carried out. Similarly, the treatment mode combining doping and annealing can reduce the structural defects of the product caused by the process, and avoid the problem that the optical band is adjustable but the quality is reduced.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the disclosure, and these alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (8)
1. A method of adjusting a photosensitive band of a photosensitive semiconductor structure, wherein the photosensitive semiconductor structure comprises a substrate and a photosensitive layer; the photosensitive layer comprises two layers from bottom to top: the density of the second silicon oxide layer is smaller than that of the first silicon oxide layer; the first silicon oxide layer is grown by a thermal oxidation method, and the second silicon oxide layer is deposited by a plasma enhanced chemical vapor deposition method;
subjecting the photosensitive layer to at least one of treatment a or treatment b, wherein:
and (b) processing a: annealing treatment, wherein the annealing temperature is 750-1200 ℃, and the photosensitive waveband is adjusted by controlling the temperature and/or time of the annealing treatment;
and (b) processing: doping boron and/or phosphorus, and adjusting the photosensitive waveband by controlling the doping proportion of the boron and/or the phosphorus.
2. The method according to claim 1, wherein boron and/or phosphorus elements are incorporated during plasma enhanced chemical vapor deposition forming of the second silicon dioxide layer to achieve the treatment b;
or,
after plasma enhanced chemical vapor deposition to form the second silicon dioxide layer, doping boron and/or phosphorus ions by means of ion implantation to achieve the treatment b.
3. The method of claim 1 or 2, wherein the process b is performed on the photosensitive layer of the photosensitive semiconductor structure before the process a.
4. The method of claim 1,
a field oxide layer is grown on the substrate,
the photosensitive area is formed by etching,
and forming the first silicon oxide layer in the photosensitive area.
5. The method of claim 1, wherein the annealing process is spike annealing or high temperature furnace tube annealing.
6. A photosensitive semiconductor structure obtained by the method of any one of claims 1 to 5.
7. An optoelectronic device comprised of the photosensitive semiconductor structure of claim 6.
8. A photodetector comprised of the photosensitive semiconductor structure of claim 6.
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| CN104775101A (en) * | 2015-04-22 | 2015-07-15 | 武汉理工大学 | Preparation method and application of porous vanadium dioxide thin film |
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| JP2010271049A (en) * | 2009-05-19 | 2010-12-02 | Sony Corp | Two-dimensional solid-state imaging device |
| CN103035782B (en) * | 2013-01-05 | 2016-08-17 | 大连理工大学 | A kind of solar cell surface low-temperature passivation method |
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