CN112151356A - Method for adjusting surface profile in gas cluster ion beam processing technology - Google Patents
Method for adjusting surface profile in gas cluster ion beam processing technology Download PDFInfo
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- CN112151356A CN112151356A CN202010998481.5A CN202010998481A CN112151356A CN 112151356 A CN112151356 A CN 112151356A CN 202010998481 A CN202010998481 A CN 202010998481A CN 112151356 A CN112151356 A CN 112151356A
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Drying Of Semiconductors (AREA)
Abstract
Acquiring metrology data relating to a surface profile of a workpiece surface using a method of adjusting the surface profile of the workpiece in gas cluster ion beam processing; calculating calibration data for the workpiece using the metrology data; data calculated from metrology data relating to a surface profile of a surface on the workpiece by the calibration data; applying correction data to a workpiece cluster ion beam using a gas to selectively form or grow sacrificial material on one or more regions of a surface of the workpiece; ion beam growing or forming a sacrificial material on one or more regions of a surface on the workpiece selectively using gas-clusters, determining an amount of the sacrificial material formed on the one or more regions of the surface by the GCIB from the calibration data; an etching process is then performed to remove the sacrificial layer material and at least a portion of the surface on the workpiece.
Description
Technical Field
The present invention relates to a method of performing a corrective process on a workpiece using a Gas Cluster Ion Beam (GCIB) process, and more particularly, to a method of adjusting a surface profile of a workpiece.
Background
Gas cluster ion beams (GCIB's) are used in a number of applications including etching, cleaning, smoothing and film formation. For ease of discussion, gas-clusters are nanoscale aggregates of materials that are in a gaseous state under standard temperature and pressure conditions. Such gas-clusters may be composed of aggregates comprising a few to thousands of molecules or more loosely bound together. The gas-clusters may be ionized by electron bombardment, which allows the gas-clusters to be formed into a directed beam of controllable energy. These cluster ions typically each carry a positive charge given by the product of the magnitude of the electronic charge and an integer greater than or equal to the charge state representing the cluster ion.
Larger sized cluster ions are generally most useful because they can carry a large amount of energy per cluster ion, while each molecule has only modest energy. The ion clusters disintegrate upon impact with the workpiece. Each molecule in a particular dissociated ion cluster carries only a small fraction of the total cluster energy. Thus, large clusters of ions have a large impact, but are limited to very shallow surface regions. This allows the gas cluster ions to be effective for a variety of surface modification processes without creating the deeper subsurface damage typical of conventional 10n beam processing.
Conventional cluster ion sources produce cluster ions having a broad size distribution, which reaches thousands of molecules in proportion to the number of molecules in each cluster. During the adiabatic expansion of the high pressure gas from the nozzle to the vacuum, condensation of individual gas atoms (or molecules) can form clusters of atoms. A skimmer with small holes strips the diverging gas stream from the center of the expanding gas stream to produce a collimated cluster beam. Neutral clusters of various sizes are created and maintained by weak interatomic forces known as van der waals forces. The method has been used to generate clusters from a variety of gases, such as helium, neon, argon, krypton, xenon, nitrogen, oxygen, carbon dioxide, sulfur hexafluoride, nitric oxide and nitrous oxide and mixtures thereof.
One emerging application of GCIB processing of workpieces includes corrective spatial processing. Wherein workpiece properties, such as film thickness, are spatially adjusted across the workpiece. By varying the GCIB dose between two separate locations on the workpiece, film thickness or other workpiece properties can be adjusted with respect to each location. For example, as shown in FIG. 1, upper surface 14 of film 12 on substrate 10 can be planarized by selectively removing material from upper surface 14 using a GCIB. In an exploded view 20 of the upper surface 14, the initial surface profile 16 may be flattened by selectively removing or etching the material 18 to produce a planar final surface profile 22. The amount of material 18 to be removed from the upper surface 14 of the film. 12 will directly affect the dose required at each location on the sub-substrate 10 and thus the total time required for GCIB processing. Thus, as the amount of material 18 increases, throughput will decrease and processing time may become expensive or even prohibitive.
Disclosure of Invention
The object of the invention is to propose a method for performing a corrective treatment of a workpiece. In particular, the present invention relates to a method for surface profile modification of a workpiece by a Gas Cluster Ion Beam (GCIB) process. In one embodiment, the invention relates to a method of planarizing a workpiece using Gas Cluster Ion Beam (GCIB) processing.
The technical scheme of the invention is as follows: a method of Gas Cluster Ion Beam (GCIB) processing to adjust a surface profile of a workpiece, comprising: acquiring metrology data relating to a surface profile of a surface of a workpiece;
calculating calibration data for the workpiece using the metrology data; data calculated from metrology data relating to a surface profile of a surface on the workpiece by the calibration data;
applying correction data to a workpiece cluster ion beam (GCIB) using a gas to selectively form or grow sacrificial material on one or more regions of a surface of the workpiece;
ion Beam (GCIB) growing or forming a sacrificial material on one or more surface regions of the workpiece selectively using gas-clusters, determining an amount of the sacrificial material formed on the one or more regions of the surface by the GCIB from the calibration data;
performing an etching process to remove the sacrificial layer material and at least a portion of the surface on the workpiece;
adjusting a surface profile of the surface on the workpiece, fabricating a workpiece by performing an etching process, wherein the etching process includes etching the sacrificial material at a first etch rate, and etching the workpiece at a second etch rate.
Further, the applying the correction data to the workpiece comprises using the GCIB and varying a beam dose, a beam area, a beam profile, a beam intensity, a beam scan rate or an exposure time, or any combination of two or more thereof.
The second etch rate is greater than the first etch rate, and wherein the performing the etch process planarizes the surface on the workpiece.
Further, the sacrificial material has a composition that is different from a material composition of the workpiece. The first etch rate is different from the second etch rate.
Further, the surface of the workpiece has an initial surface profile prior to the selectively forming, the initial surface profile having a maximum surface height and a minimum surface height; depositing the sacrificial material to a height between the maximum surface height of the initial surface profile and the minimum surface height of the initial surface profile. Wherein the second etch rate is greater than the first etch rate, and wherein the adjusting etches the workpiece material to at least the minimum surface height of the initial surface profile.
Further, after the adjusting, the surface of the workpiece includes a final surface profile, and wherein a first difference between a maximum surface height of the final surface profile and a minimum surface height of the final surface profile is smaller. A second difference between the maximum surface height of the initial surface profile and the minimum surface height of the initial surface profile is greater.
Further, the sacrificial material is deposited to a height equal to or greater than the maximum surface height of the initial surface profile. The first etch rate and the second etch rate are approximately equal. The adjusting the surface profile of the surface includes substantially planarizing the surface of the workpiece. The metrology data is measured at a plurality of locations on the workpiece.
Further, determining areas and maximum surface heights of one or more second areas of the one or more first minimum surface heights initial uneven surface profile to establish an initial value of the height difference;
preparing correction data for a workpiece, the correction data calculated from metrology data relating to a surface profile of a surface on the workpiece; selectively forming sacrificial material on the one or more regions of the workpiece effective to increase the minimum surface height and decrease the height difference from the initial value using a Gas Cluster Ion Beam (GCIB), wherein an amount of the sacrificial material formed on the one or more regions of the surface is such that the GCIB is determined from the calibration data; and adjusting the surface profile of the workpiece to have a target surface profile in which the target value of the height difference is smaller than the initial value by performing an etching process after the selective formation, wherein the etching process includes etching the sacrificial material in a first etching. The workpiece is then etched at a second etch rate.
Further, the sacrificial material is selectively formed on the one or more first areas, the sacrificial material having a height between the maximum surface height and the minimum surface height of the initial uneven surface profile, and wherein the second etch rate is greater than the first etch rate, and wherein the adjusting etches the workpiece to at least the minimum surface height of the initial uneven surface profile.
Further wherein the sacrificial material is selectively formed on the one or more first areas to have a height equal to or greater than the maximum surface height of the initial uneven surface profile, and wherein the first etch rate and the second etch rate are approximately equal.
Further, the target surface profile is planar, the target value is substantially zero for the height difference, and the adjusting etches the workpiece at least the minimum surface height of the initial uneven surface profile to reach the target value of zero.
According to one embodiment, a method of performing a corrective process of a workpiece is described. The method includes selectively forming a sacrificial material on one or more regions of a surface of a workpiece using a Gas Cluster Ion Beam (GCIB), and adjusting a surface profile of the surface on the workpiece by performing an etching process after the selective forming. The etching process etches the sacrificial material and the workpiece material.
According to another embodiment, the method comprises: acquiring measurement data of a workpiece; and calculating correction data for the workpiece using the metrology data; applying correction data to the workpiece using a Gas Cluster Ion Beam (GCIB) to selectively form sacrificial material on one or more regions of the workpiece surface; an etching process is performed to remove the sacrificial material and at least a portion of the surface of the workpiece.
According to yet another embodiment, a processing system for corrective processing of a surface on a workpiece is described. The processing system comprises: a metrology system configured to acquire metrology data of a workpiece; and a multi-process control system configured to calculate calibration data for the workpiece using the metrology data; a Gas Cluster Ion Beam (GCIB) processing system configured to apply correction data to the workpiece to selectively deposit sacrificial material on one or more regions of the workpiece surface; an etching system configured to adjust a surface profile of a surface of a workpiece by performing an etching process to remove at least a portion of the surface of the workpiece and a sacrificial material; the workpiece processing system is coupled to the GCIB processing system and the etching system and is configured to move workpieces into and out of the GCIB processing system and the etching system in accordance with instructions from the control system.
Has the advantages that: the present application provides a method of performing corrective processing of a workpiece. The method includes selectively forming a sacrificial material on one or more regions of a surface of a workpiece using a Gas Cluster Ion Beam (GCIB), and adjusting a surface profile of the surface on the workpiece by performing an etching process after the selective forming.
Drawings
Fig. 1 shows a method of performing a correction process on a workpiece according to the prior art.
Fig. 2A is a diagram illustrating a method of performing correction processing on a workpiece according to an embodiment of the present invention.
Fig. 2B is a diagram showing a method of performing correction processing on a workpiece according to another embodiment of the present invention.
Fig. 3A to 3C illustrate a method of performing correction processing on a workpiece according to other embodiments of the present invention.
FIG. 4 provides a flow chart of a method of performing corrective processing on a workpiece according to one embodiment of the present invention.
FIG. 5 provides a flow chart of a method of performing a calibration process on a workpiece according to another embodiment of the invention.
Fig. 6 is a calibration data of the workpiece.
Fig. 7 is a schematic diagram of a correction processing system according to an embodiment.
Figure 8 is an illustration of a GCIB processing system.
Figure 9 is another illustration of a GCIB processing system.
Figure 10 is an illustration of another example of a GCIB processing system.
Figure 11 is a diagrammatic view of an ionization source for a GCIB processing system.
Detailed Description
In various embodiments, a method and system for performing corrective processing on a workpiece using a Gas Cluster Ion Beam (GCIB) is disclosed. One skilled in the relevant art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of various embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the present invention. However, the invention may be practiced without the specific details. Furthermore, it should be understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.
In the description and claims, the terms "coupled" and "connected," along with their derivatives, are used, and it is understood that these terms are not intended as synonyms for each other, but rather that in a particular embodiment, "connected" may be used to indicate that two or more elements are in direct physical or electrical contact with each other, and "coupled" may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other. Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention, but does not denote that they are present in every embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments. In other embodiments, various additional layers and/or structures may be included and/or the described features may be omitted.
As used herein, "workpiece" generally refers to an object being processed according to the present invention, which may include any material portion or structure of a device, particularly a semiconductor or other electronic device, and may be, for example, a base substrate. Layers on or over structures such as semiconductor wafers or underlying substrate structures such as thin films, and thus, the workpiece is not intended to be limited to any particular underlying structure, patterned or unpatterned underlying layer or overlying layer, but rather the description below may refer to a particular type of workpiece, for purposes of illustration only and not limitation.
As noted above, it is often necessary to perform corrective processing of a workpiece using a GCIB. In particular, it is necessary to adjust the surface profile of the surface on the workpiece. For example, it may be desirable to planarize the upper surface of the workpiece. However, as noted above, GCIB processing time may become excessive or even prohibitive when attempting to remove material using only GCIB processing.
Thus, according to one embodiment, a method of performing a corrective process on a workpiece is described. In this example, the workpiece is a thin film on a substrate. As shown in fig. 1 and 2. Referring to fig. 2A and 2B, upper surface 34 of film 32 on substrate 30 may be planarized by selectively forming sacrificial materials 39, 39 "on upper surface 34 using GCIB, and then performing an etching process. Selective formation of the sacrificial material may be achieved by selective deposition of the sacrificial material 39 (fig. 2A) or selective growth of the sacrificial material 39 (fig. 2B). For example, in the exploded view 40 of the upper surface 34, the initial surface profile 36 may be flattened to produce a flat surface profile 42 by selectively forming sacrificial materials 39, 39 in lower regions or "valleys" of the thin film 32. For example, an etching process that removes film 32 at a greater rate than sacrificial materials 39, 39' may be performed to remove sacrificial materials 39, 39 from film 32 and the relatively higher regions or "peaks" of film 32. Because the etch rate of the sacrificial material 39, 39 "is relatively low, the sacrificial material 39, 39' temporarily protects the low regions or" valleys "of the membrane 32, while the relatively higher regions or" peaks "protect the low regions or" valleys "of the membrane 32 from being deleted.
The amount of sacrificial material 39, 39' required to achieve a planar surface profile 42 depends on the difference between the etch rates of the sacrificial material 39, 39 "and the thin film 32. As shown in fig. 2A and 2B, the amount of sacrificial material 39, 39 "selectively deposited or grown by the GCIB may be less than, or even substantially less than, the amount of material that needs to be removed from the film 32 on the substrate 30. As a result, GCIB processing time can be greatly reduced.
As shown in fig. 2A and 2B, the upper surface 34 of the thin film 32 on the substrate 30 is subjected to correction processing. Alternatively, the correction process may be performed on the upper surface of the substrate 30. Alternatively, the correction process may be performed on the upper surface of the substrate 30. A substrate having one or more films, or one or more structures, or a combination thereof, wherein each film and/or structure may or may not contain different material properties. Thus, as described above, the correction process can be performed on any workpiece requiring adjustment of the surface profile.
Referring now to fig. 3A through 3C, several methods of performing a corrective process on a workpiece are described according to other embodiments. In these examples, the workpiece is a semiconductor substrate. As shown in fig. 3A, a substrate 50 includes an initial surface profile 52, wherein a target surface profile 54 may be achieved by a corrective process to the substrate 50. In this example, a planarized surface profile is depicted as the target, but the invention is not limited thereto. The initial surface profile 52 is characterized by a minimum surface height 64 and a maximum surface height 68. As described above, GCIB can be used to selectively form sacrificial material 60 on one or more regions of substrate 50. For example, the one or more regions on the substrate 50 may include a first region 62 and a second region 63.
Thereafter, an etching process is performed to remove the sacrificial material 60 and obtain the target surface profile 54. The etching process may include a dry etching process, or a wet etching process, or both. The dry etch process may include a dry non-plasma etch process, or a dry plasma etch process, or both. The wet etching process may include immersing the one or more substrates in a liquid phase etching solution.
The amount of sacrificial material 60 selectively formed on the substrate 50 can be characterized by a sacrificial material height 66. Although the sacrificial material height 66 for the sacrificial material 60 is shown as being the same in the first and second regions 63, the sacrificial material height may vary from the first region 62 to the second region 63.
As shown in fig. 1, when the etch process is selected to etch the substrate 50 at a greater rate than the sacrificial material 60, the sacrificial material height 66 may be selected to be between the minimum surface height 64 and the maximum surface height 68 of the initial surface, as shown in fig. 3A. The outline 52 of the substrate 50. The greater the difference in etch rate between the substrate 50 and the sacrificial material 60, the less amount of sacrificial material 60 is required to achieve the target surface profile 54. Further, the smaller the difference in etch rate between the substrate 50 and the sacrificial material, the greater the amount of sacrificial material 60 needed to reach the target surface profile 54 in the material 60.
As shown in fig. 1 and 2. As shown in fig. 3B and 3C, when the etch rates of the substrate 50 and the sacrificial material 60, 60' are substantially the same, the height of the sacrificial material may be selected to be about the same as the maximum surface height of the initial surface profile (fig. 3B), or greater (fig. 3C).
Thus. In some embodiments, the etch rate of the sacrificial material is approximately equal, while in other embodiments, the etch rate is approximately equal. Depending on the relative etch rates, the sacrificial material may be selectively formed to the following heights: (1) between the minimum and maximum surface heights of the initial surface profile; (2) a maximum surface height equal to the initial surface profile; or (3) a maximum surface height greater than the initial surface profile. According to one embodiment, the etching of the sacrificial material and the workpiece material may be such that the final surface profile has a maximum surface height and a minimum surface height, wherein the difference between them is less than the corresponding difference in the initial surface profile. In other words, the surface profile may be adjusted to reduce the difference between the peaks and valleys. In another embodiment, the etching effectively planarizes the surface such that the final surface profile is substantially planar. To this end, the workpiece surface may be etched to a minimum surface height of the initial surface profile or to a depth below the minimum surface height.
Referring now to FIG. 4, a method of performing a corrective process of a workpiece is described according to an embodiment. The method includes a flow diagram 500, the flow diagram 500 beginning at 510, and at 520 a GCIB is used to selectively form a sacrificial material on one or more regions of a workpiece. After such selective formation, the sacrificial material of the surface profile on the workpiece is adjusted by performing an etching process.
According to one example, the adjustment to the surface profile of the workpiece can include planarizing a silicon substrate, such as a single crystal silicon substrate, using a corrective process. The sacrificial material may comprise a silicon-containing material, such as silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon carbide (SiC)x) Silicon oxynitride (SiO)xNy) Or silicon carbonitride (SiC)xNy) Or any combination of two or more thereof. For example. The sacrificial material may include oxygenSilicon nitride, silicon carbide or silicon nitride. Additionally, the sacrificial material may comprise a carbon-containing material, such as amorphous carbon or diamond-like carbon. Additionally, the sacrificial material may include a germanium-containing material. Further, the sacrificial material may comprise a boron-containing material such as BN. The sacrificial material may include a material that etches at a different rate than the workpiece material being corrected when subjected to an etching process.
Selective formation may include selective deposition of a sacrificial material, wherein all atomic constituents of the sacrificial material are incorporated into the GCIB. For example, when SiN is depositedxOr SiCxIn this case, the workpiece is irradiated with a GCIB containing silicon and nitrogen, or silicon and carbon, respectively. Alternatively, selective formation may include selective growth of a sacrificial material, wherein only a portion of the atomic composition of the sacrificial material is introduced into the GCIB, with the remainder being provided by the workpiece on which the sacrificial material is grown. For example, when growing SiO on a workpiecexThe workpiece can include a silicon surface that is irradiated with an oxygen-containing GCIB.
In generating the GCIB, the compressed gas is expanded into a reduced pressure environment to form gas clusters, the gas clusters are ionized, and the ionized gas clusters are then accelerated and optionally filtered. In SiNx，SiCxOr SiCxNyThe pressurized gas may comprise a silicon-containing species as well as a carbon-containing species and/or a nitrogen-containing species during the selective deposition. For example. A silicon-containing substance. For example, the silicon-containing species may comprise Silane (SiH)4) Disilane (Si)2H6) Dichlorosilane (SiH)2Cl2) Trichlorosilane (SiCl)3H) Diethyl silane (C)4H12Si), trimethylsilane (C)3H10Si), silicon tetrachloride (SiCl)4) Silicon tetrafluoride (SiF)4) Or a combination of two or more thereof. Additionally, for example, the carbonaceous material can include a material having the formula CxHyWherein x and y are integers greater than or equal to 1, wherein x and y are integers greater than or equal to 1. Are unified into one and have the formula CxHyFzWherein x, y and z are integers of one or more, CO or CO2Or any combination of two or more thereof. Further, for example, the nitrogen-containing species may include N2，NH3，NF3，NO，N2O or NO2Or any combination of two or more thereof. Additional details of film deposition using GICB are provided in U.S. patent application No.11/864,961, entitled "method for stripping films using gas cluster ion beam treatment"; U.S. patent No.11/864,961. The contents of which are incorporated herein by reference in their entirety.
Alternatively, the pressurized gas may include a compound having silicon (Si) and carbon (C), or a compound having Si and nitrogen (N). The compound contains Si and C in the same molecule, or Si and N in the same molecule. Further, the compound may have a Si-C bond or a Si-N bond. For example, the pressurized gas may comprise an alkylsilane, an alkenylsilane, or an alkynylsilane, or any combination of two or more thereof. Additionally, for example, the pressurized gas may include methylsilane (H)3C-SiH3) Dimethylsilane (H)3C-SiH2-CH3) Trimethylsilane ((CH)3)3-SiH) or tetramethylsilane ((CH)3)4-Si), or any combination of two or more thereof. Additional details of thin film deposition using GCIB are provided in U.S. patent application No. 12/049,583 entitled "method and system for ion beam deposition of silicon carbide using gas clusters"; the entire contents of which are incorporated herein by reference.
During selective growth of SiOx or SiNx, the pressurized gas may contain an oxygen-containing species, such as O2，NO，N2O or NO2Or any combination of two or more thereof. Additional details of film growth using GCIB are provided in U.S. application serial No.12/144,968 entitled "method and system for growing thin films using AGAS cluster ion beams"; the contents of which are incorporated herein by reference in their entirety.
To adjust the relative amount of sacrificial material formed on the workpiece, the GCIB accelerating potential or GCIB dose, or any combination thereof, may be varied from one region to another of one or more regions of the workpiece. Here, the beam dose is given in units of the number of clusters per unit area. However, the beam dose may also include beam current and/or time (e.g., GCIB dwell time). For example, the beam current may be measured and held constant while the time is varied to vary the beam dose. Alternatively, for example, when time is varied to vary the beam dose, the rate at which the clusters impact the surface per unit area (i.e., the number of clusters per unit area per unit time) may be kept constant. In addition, other GCIB properties may be varied to adjust the thickness of the sacrificial material and/or the surface profile of the sacrificial material, including but not limited to gas flow rate, stagnation pressure, cluster size or gas nozzle design (e.g., nozzle throat) diameter, nozzle length and/or nozzle divergence cross-sectional half angle). In addition, other material properties can be altered by adjusting the included GCIB properties. But are not limited to, density, mass, etc.
After selectively forming a sacrificial material on one or more regions of the workpiece, the initial surface profile is adjusted toward a target surface profile by performing an etching process to remove exposed regions of the workpiece while removing the sacrificial material. Desirably, when planarizing the workpiece, the sacrificial material is removed at a slower rate than the workpiece material.
The etching process may include a wet etching process in which the one or more workpieces are immersed in a liquid phase etching solution after the sacrificial material is selectively formed. For example, the liquid phase etching solution may comprise nitric acid (HNO)3) Hydrofluoric acid (HF), sulfuric acid (H)2SO4) Phosphoric acid (H)3PO4) Or a mixture of two or more thereof. The liquid phase etching solution may further comprise one or more additives such as pH modifiers to control etch rate and/or etch selectivity, surfactants to improve surface wetting and/or organic solvent selection to control etching. The pH adjusting agent may include NH4OH，NH4F，HCl，HNO3Or H2SO4. In addition, the liquid phase etching solution may further comprise water or a buffer, such as ammonium fluoride (NH)4F) Or mixtures thereof. The composition of the liquid phase etching solution or the temperature of the solution or both may be tailored to the sacrificial material anda target etch selectivity between workpiece materials is achieved.
Alternatively, the etching process may comprise a dry etching process in which the one or more workpieces are exposed to a dry non-plasma or dry plasma etching process. For example, the etching process may include a dry plasma etching process in which a process gas is introduced into a process chamber maintained under a reduced pressure atmosphere, and a plasma is formed by heating free electrons in the process gas to cause ionizing collisions. The workpiece is exposed to a mixture of chemically reactive and charged species, causing corrosion of the workpiece material. When etching silicon (single crystal or polycrystalline), the process gas may include, for example, HCI, HBr, Cl2，Br2，F2，NF3，SF6And the like. The process gas may further comprise an inert gas, for example an oxygen-containing gas as a noble gas. The composition of the etching process, the temperature of the workpiece, the pressure of the reduced pressure atmosphere or the power coupled to the plasma, or any combination of two or more thereof, may be tailored to achieve the objectives. The etch options also include sacrificial materials and workpiece materials.
Referring now to FIG. 5, a method of performing corrective processing of a workpiece is described in accordance with another embodiment. The method includes a flow chart 610, which flow chart 600 begins with acquiring metrology data for a workpiece. Metrology data may include parametric data, such as geometric, mechanical, electrical, and/or optical parameters associated with the upper layer or one or more devices formed in or on the upper layer, for example, metrology data including, but not limited to, any parameter that may be measured by: additionally, for example, metrology data includes film thickness, film height, surface roughness, surface contamination, feature depth, trench depth, via depth, feature width, trench measurement, width, via width, Critical Dimension (CD), resistance, or any combination of two or more thereof.
According to one example, FIG. 6 shows a film thickness map of a semiconductor substrate having an upper layer including a thin film or layer as measured by a spectroscopic ellipsometer, such as a commercially available model UV-1280SE thin film meter manufactured by KLA-Tencor Corporation. As shown in fig. 6, the thickness of the thin film on the substrate structure 1 is mapped according to the position on the substrate structure.
For example, such measurement of initial thickness non-uniformity of an upper film layer on a substrate structure is characterized ex situ in a GCIB processing system by spectroscopic ellipsometry or other suitable conventional techniques. Such a technique produces a point-by-point film thickness map that is reduced to a thickness profile (or similar profile) as shown in fig. 6. In an alternative embodiment, an in-situ uniformity mapping instrument using spectroscopic ellipsometry or other suitable conventional film thickness mapping techniques is incorporated into a GCIB processing system (to be described later) to examine the profile analysis process. In either case, the non-uniformity measurements are stored by the standard computer as a series of thickness points with precise locations. As an example, film measurement methods such as spectroscopic ellipsometry are used to map only the thickness of the top film layer, regardless of variations in substrate structure thickness, underlying film thickness or surface flatness.
As shown in fig. 1, with reference to fig. 6, metrology data is measured at two or more locations on a workpiece. In another embodiment, the data is collected and collected for a plurality of workpieces. For example, the plurality of workpieces may include cassettes of semiconductor substrates having thin films thereon. Metrology data is measured at two or more locations on the workpiece, e.g., metrology data is acquired at multiple locations on the workpiece. Thereafter, a plurality of locations indicative of film thickness on the workpiece are extended from measured locations to unmeasured locations using a data fitting algorithm. For example, the data fitting algorithm includes interpolation (linear or non-linear), extrapolation (linear or non-linear), or a combination thereof. One or more mathematical representations of the metrology data are generated by fitting the metrology data. An example of a data fitting algorithm is found in Matlab, commercially available from The MathWorks, inc.
In other embodiments, when the metrology data for the workpiece includes measurements of film height, surface roughness, etc., the above-described data fitting process is also performed to obtain data points for unmeasured portions of the workpiece. In an alternative embodiment, metrology data is obtained for the entire workpiece and no data fitting process is performed.
At 620, calibration data for the workpiece is calculated using the metrology data for the workpiece. The calibration data for a given workpiece includes process conditions for adjusting the GCIB dose according to position on the workpiece to achieve varying metrology data and target parameter data between parameter data (e.g., surface profile of a substrate or film thickness) associated with the incoming workpiece, such as a desired final surface profile of the substrate or film thickness for the given workpiece. For example, the correction data for a given workpiece may include determining process conditions for correcting non-uniformities in the parameter data for the given workpiece using the GCIB. Wherein a spatial map is provided for adjusting process conditions (e.g., GCIB dose) as a function of position on the workpiece in order to vary the amount of sacrificial material formed on the workpiece prior to the etching process. Alternatively, for example, the correction data for a given workpiece may include determining process conditions for creating a particular expected non-uniformity of parameter data for the given workpiece using the GCIB.
Using the established relationship between the desired change in parameter data and the GCIB dose and the established relationship between the GCIB dose and the GCIB process conditions having a set of GCIB processing parameters, calibration data for each workpiece can be determined. For example, mathematical algorithms may be employed to acquire parameter data associated with input metrology data, calculate differences between the input parameter data and target parameter data, invert GCIB processing patterns (i.e., deposition patterns) and etch patterns. To accommodate this difference, etch selectivity and/or uniformity during etching is taken into account, and a beam dose profile is created using the relationship between changes in parameter data and GCIB dose to achieve a GCIB processing mode. Thereafter, for example, a relationship between beam dose and GCIB process conditions can be used to determine GCIB processing parameters to affect the calculated beam dose profile. GCIB processing parameters may include beam dose, beam area, beam profile, beam intensity, beam scan rate or exposure time (or beam dwell time), or any combination of two or more thereof.
At 630, correction data is applied to the workpiece by selectively forming a sacrificial material on one or more regions of the workpiece using the gas cluster ion beam.
At 640, an etch process is performed to remove the sacrificial material. Wherein the parameter data of the workpiece is adjusted from initial parameter data (e.g., an initial surface profile or film thickness of the substrate) to target parameter data (e.g., a final surface profile or film thickness of the substrate).
Referring now to FIG. 7, a processing system 80 for performing the method described in FIG. 5 is described. The processing system 80 includes a metrology system 82 configured to acquire metrology data of the workpiece, and a multi-processing control system 84 configured to calculate calibration data. The workpiece using the metrology data, the GCIB processing system 86 configured to apply correction data to the workpiece to selectively deposit sacrificial material on one or more regions of a surface on the workpiece, and the etching system 88 configured to adjust the surface profile polish the workpiece surface by performing an etching process to remove the sacrificial material. In addition, there is a processing system. 80 include workpiece processing. System 85 is coupled to GCIB processing system 86 and etching system 88 and is configured to transfer workpieces to and from GCIB processing system 86 and etching system 88 in accordance with instructions from multi-process control system 84.
The metering system 82 may comprise an off-site metering system, or it may comprise an in-situ metering system. In one embodiment. Metrology system 82 is located in an ex-situ position of GCIB processing system 86, meaning that the measurement tool is located separate from GCIB processing system 86. In another embodiment, the metrology system 84 is in situ, and thus contained within the measurement system. GCIB processing system 86 allows vacuum measurements to be made on GCIB processing system 86. The metrology system 82 may be available to the workpiece handling system 85 (as shown in dashed lines in fig. 7) or may not be accessible to the workpiece handling system 85.
For example, metrology system 82 constitutes an optical scatterometry system. The scatterometry system comprises a scatterometer, combining a beam profile ellipsometer (ellipsometer) and a beam profile reflectometer (reflectometer), available from thermal-Wave, Inc. or Nanometrics, Inc. (1550Buckeye Drive, Milpitas (alif.95035.) furthermore, for example, the in situ metrology system may comprise an integrated optical digital profile measurement (iODP) scatterometry module configured to measure metrology data on a workpiece
Once metrology data has been collected for a workpiece using metrology system 82, the metrology data is provided to a multi-process control system 84 to calculate calibration data. Metering data is communicated between the metering system 82 and the multi-process control system 84. A physical connection (e.g., cable) or a wireless connection, combinations thereof, or any other desired transmission medium. In another embodiment, the metering data is communicated via an intranet or internet connection. Alternatively, metering data is communicated between the metering system 82 and the multi-process control system 84 via a computer readable medium.
Still referring to fig. 7, the multi-process control system 84 is configured to receive metrology data from the metrology system 82, calculate correction data for the workpiece using the metrology data, and instruct the GCIB processing system 86 to apply the completed correction. A Gas Cluster Ion Beam (GCIB) transmits data to the workpiece.
According to one embodiment. The multi-process control system 84 includes a microprocessor, a memory and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the workpiece processing system 85, the GCIB processing system 86 and the etch system 88, as well as monitoring outputs from the workpiece processing system 85, the GCIB processing system 86 and the etch system 88. In addition, the multi-process control system 84 is configured to communicate information to the metrology system 82, the workpiece processing system 85, the GCIB processing exchange information system 86, and the etch system 88.
By way of example, the multi-process control system 84 is implemented as a general purpose computer system that performs a portion or all of the microprocessor based processing steps of the invention in response to a processor executing one or more sequences of one or more. Instructions contained in the memory. Such instructions are read into the controller memory from another computer-readable medium, such as a hard disk or a removable media drive. One or more processing or multi-processing devices are used as a controller microprocessor to execute the sequences of instructions contained in main memory. In alternative embodiments, hardwired ASICS configured to perform the functions of workpiece processing system 85, GCIB processing system 86, and etching system 88 are used in place of or in combination with software instructions. Thus, embodiments are not limited to any specific combination of hardware circuitry and software.
By way of example, as described above, the multi-process control system 84 is used to configure any number of processing elements, and the multi-process control system 84 collects, provides, processes, stores, and displays data from the processing elements. The multiple process control system 84 includes multiple applications for controlling one or more processing elements and multiple controllers. For example, the multi-process control system 84 includes a Graphical User Interface (GUI). A component (not shown) is provided that provides an interface that enables a user to monitor and/or control one or more processing elements.
The multi-process control system 84 is local to the workpiece processing system 85, the GCIB processing system 86, and the etching system 88, or remote to the workpiece processing system 85, the GCIB processing system 86, and the etching system. For example, the multi-process control system 84 is configured to exchange data with the workpiece processing system 85, the GCIB processing system 86, and the etch system 88 using a direct connection, an intranet, and/or the internet. The multi-process control system 84 is coupled to an intranet at, for example, a customer site (i.e., a device manufacturer, etc.), or coupled to an intranet at, for example, a supplier site (i.e., a device). The manufacturer). Alternatively or additionally, the multiple process control system 84 is coupled to the Internet. In yet another embodiment, another computer (i.e., controller, server, etc.) accesses the multi-process control system 84 to exchange data via a direct connection, an intranet, and/or the internet.
Etching system 88 may include a dry etching system, or a wet etching system, or both. The dry etching system may comprise a dry non-plasma etching system, or a dry plasma etching system, or both. The wet etching system may include a system configured to immerse one or more workpieces in a liquid phase etching solution.
According to one embodiment, a GCIB processing system 100 for performing the correction process described above is depicted in fig. 8. GCIB processing system 100 includes vacuum vessel 102, workpiece holder 150, vacuum processing systems 170A, 170B, and 170C, upon which workpiece 152 to be processed is secured. The workpiece 152 may be a semiconductor substrate, a wafer, a Flat Panel Display (FPD), a Liquid Crystal Display (LCD), or any other workpiece. The GCIB processing system 100 is configured to produce a GCIB for processing a workpiece 152.
Still referring to GCIB processing system 100 in fig. 8, vacuum vessel 102 includes three communicating chambers, namely, a source chamber 104, an ionization/acceleration chamber 106, and a processing chamber 108 for providing a reduced pressure enclosure. The three chambers are evacuated to the appropriate operating pressure by vacuum pumping systems 170A, 170B and 170C, respectively. In the three communicating chambers 104, 106, 108, a gas cluster beam may be formed in the first chamber (source chamber 104) and a gas cluster beam may be formed in the second chamber (ionization/acceleration chamber 106), wherein the gas cluster beam is ionized and accelerated. Then, in the third chamber (the processing chamber 108), the workpiece 152 may be processed using the accelerated gas cluster ion beam.
As shown in fig. 1. Referring to fig. 8, GCIB processing system 100 may include one or more gas sources configured to introduce one or more gases or gas mixtures into vacuum vessel 102. For example, the first gas component stored in the first gas source 111 enters under pressure through the first gas source. The gas control valve 113A is connected to one or more gas metering valves 113. Additionally, for example, a second gas component stored in the second gas source 112 is passed under pressure through a second gas control valve 113B into one or more gas metering valves 113. Further, for example, the first gas component or the second gas component or both may comprise a film-forming gas component. Further, for example, the first gas component or the second gas component, or both, may include a condensable inert gas, carrier gas, or diluent gas. For example, the inert gas, carrier gas, or diluent gas may include a noble gas, i.e., He, Ne, Ar, Kr, Xe, or Rn.
In addition, the first gas source 111 and the second gas source 112 may be used alone or in combination with each other to generate ionized clusters. The film-forming composition can include one or more film precursors that include a predominant atomic or molecular species of a film that is desired to be formed or produced (e.g., deposited or grown) on a workpiece, i.e., a sacrificial material.
The pressurized gas mixture from the first gas source 111 and/or the second gas source 112 may include an oxygen-containing gas, a nitrogen-containing gas, a carbon-containing gas, and a hydrogen-containing gas when depositing or growing the sacrificial material. A gas, a silicon-containing gas, a germanium-containing gas or optionally an inert gas, or a combination of two or more thereof. For example, when growing an oxide or performing an oxidation process, the pressurized gas mixture may contain oxygen such as O2The oxygen-containing gas of (1). Additionally or alternatively, for example, the pressurized gas mixture may comprise O2，N2，NO，NO2，N2O, CO or CO2Or any combination of two or more thereof. Additionally, for example, the optional inert gas can include a noble gas.
High pressure condensable gases comprising the first gas composition or the second gas composition or both enter the stagnation chamber 116 through the gas supply tube 114 and are injected into the lower pressure vacuum through the appropriately shaped nozzle 110. The high pressure from the stagnation chamber 116 to the low pressure region of the source chamber 104, expansion of the condensable gas, acceleration of the gas velocity to supersonic velocity, and emission of a gas cluster beam 118 from the nozzle 110.
The inherent cooling of the jet, which is static enthalpy, is exchanged for kinetic energy, which is generated by the expansion of the jet, causing a portion of the gas jet to condense and form a gas cluster bundle 118 with clusters, each cluster consisting of several to several. One thousand atoms or molecules that are weakly bound. A gas separator 120 is located downstream of the exit of the nozzle 110 between the source chamber 104 and the ionization/acceleration chamber 106, the gas separator 120 separating the portion of the gas molecules that may not condense into the gas cluster 118. Clusters formed from gas molecules in the core of the gas cluster beam 118 may have formed. Among other reasons, such selection of a portion of the gas cluster 118 may result in a pressure reduction in the downstream region where higher pressures may be detrimental (e.g., the ionizer 122 and the process chamber 108). In addition, the gas separator 120 defines an initial size for the gas cluster beam entering the ionization/acceleration chamber 106.
After forming the gas cluster beam 118 in the source chamber 104, the constituent gas clusters in the gas cluster beam 118 are ionized by the ionizer 122 to form the GCIB 128. The ionizer 122 may comprise an electron impact ionizer that generates ionizers from electrons. One or more filaments 124 are accelerated and directed to collide with gas clusters in the gas cluster beam 118 within the ionization/acceleration chamber 106. Upon collision with a gas cluster, electrons of sufficient energy release the electron cluster from the gas molecule to produce ionized molecules. Ionization of gas-clusters can result in a large number of charged gas-cluster ions, typically having a net positive charge.
As shown in fig. 1. As shown in fig. 8, beam electronics 130 are used to ionize, extract, accelerate and focus GCIB 128. The beam electronics 130 includes a filament power supply 136, the filament power supply 136 providing a voltage VpTo heat the ionizer filament 124.
In addition, beam electronics 130 include a set of suitably biased high voltage electrodes 126 in ionization/acceleration chamber 106 that extract cluster ions from ionizer 122. The high voltage electrode 126 then accelerates the extracted clusters 10ns to the desired energy. And centralize them to define GCIB 128. The kinetic energy of the cluster ions in the GCIB128 is typically between about 1000 electron volts (1keV) and tens of keV. For example, GCIB128 can be accelerated to 1 to 100 keV.
In addition, the beam electronics 130 may include an accelerator power supply 140, the accelerator power supply 140 providing a voltage VAccTo bias one of the high voltage electrodes 126 with respect to the ionizer 122, resulting in a total GCIB acceleration energy equal to about VAccElectron volts (eV). For example, the accelerator power supply 140 provides a voltage to the second electrode of the high voltage electrodes 126 that is less than or equal to the anode voltage of the ionizer 122 and the extraction voltage of the first electrode.
Further, the beam electronics 130 may include lens power supplies 142, 144, which may be provided with a potential (e.g., V |)L1And VL2) Some of the high voltage electrodes 126 are biased to focus the GCIB 128. Example (b)For example, the lens power supply 142 may provide a voltage less than or equal to the anode voltage of the ionizer 122, the extraction voltage of the first electrode, and the accelerator voltage of the second electrode to a third electrode of the high voltage electrodes 126, and the lens power supply may provide a voltage less than or equal to the anode voltage of the ionizer 122, the extraction voltage of the first electrode, the accelerator voltage of the second electrode, and the first lens voltage of the third electrode to a fourth electrode of the high voltage electrodes 126.
Note that many variations on the ionization and extraction scheme may be used. Although the approach described herein may be used for instructional purposes, another extraction approach involves placing the first element of the ionizer and the extraction electrodes (or extraction optics) at VAcc. This typically requires fiber optic programming of the control voltage. Ionizer power, but the overall optical system can be simplified. The invention described herein is useful regardless of the details of the ionizer and the extraction lens offset.
The monomer or monomer and light cluster ions can be removed from the GCIB128 using a beam filter 146 in the ionization/acceleration chamber 106 downstream of the high voltage electrode 126 to define a filtered process GCIB128A into the processing chamber 108. In one embodiment, beam filter 146 substantially reduces the number of clusters having 100 or fewer atoms or molecules or both. The beam filter may include a magnet assembly for applying a magnetic field on the GCIB128 to assist in the filtering process.
Still referring to fig. 8, in the path of the GCIB128, a beam shutter 148 is provided in the ionization/acceleration chamber 106. The beam shutter 148 has an open state in which the GCIB128 is allowed to pass from the ionization/acceleration chamber 106. Processing chamber 108 defines a process GCIB128A and is in an off state in which GCIB128 is prevented from entering processing chamber 108. The control cable conducts control signals from the control system 190 to the beam gate 148. The control signal controllably switches the beam shutter 148 between open and closed states of the light beam.
A workpiece 152, which may be a wafer or semiconductor wafer, a Flat Panel Display (FPD), a Liquid Crystal Display (LCD), or other substrate to be processed by GCIB processing, is disposed in the path of step GCIB 128A. Since most applications desire to process large workpieces with spatially uniform results, a scanning system may be required to uniformly scan the process GCIB128A over a large area to produce spatially uniform results.
The X-scan actuator 160 provides linear motion of the workpiece support 150 in the direction of X-scan motion (into and out of the plane of the paper). The Y-scan actuator 162 provides linear motion of the workpiece holder 150 in the direction of the Y-scan motion 164, which is generally orthogonal to the X-scan motion. The combination of X-scan and Y-scan motions translates the workpiece 152 held by the workpiece holder 150 in a raster-like scanning motion by the process GCIB128A to cause uniform (or otherwise programmed) illumination of the workpiece surface. In diagram 152, workpiece 152 is processed by process GCIB 128A.
The workpiece holder 150 positions the workpiece 152 at an angle relative to the axis of the process GCIB128A such that the process GCIB128A has a beam incident angle 166 relative to the surface of the workpiece 152. The beam incident angle 166 may be 90 degrees or other angles, but is typically 90 degrees or near 90 degrees. During the Y scan, the workpiece 152 and workpiece holder 150 move from the positions shown to alternate positions "a" indicated by marks 152A and 150A, respectively. Note that the workpiece 152 is scanned by the process GCIB128A as it moves between the two positions, and in both extreme positions, the workpiece 152 is completely moved out of the path of the process GCIB128A (overscan). Although not explicitly shown in fig. 1, similar scanning and overscan is performed in the (usually) orthogonal X-scan motion direction (in and out of the plane of the paper) as shown in fig. 1.
The beam current sensor 180 may be positioned above the workpiece support 150 in the path of the process GCIB128A, scanning the workpiece support 150 out of the path of the process GCIB 128A. The beam current sensor 180 is typically a faraday cup or the like, is enclosed except for the beam entrance opening, and is typically secured to the walls of the vacuum vessel 102 by an electrically insulating mount 182.
As shown in fig. 1. Referring to fig. 8, control system 190 is connected by electrical cables to X-scan actuator 160 and Y-scan actuator 162 and controls X-scan actuator 160 and Y-scan actuator 162 to place or scan workpiece 152 in relation to process GCIB128A and to uniformly scan workpiece 152 in relation to process GCIB128A to achieve a desired processing of workpiece 152 by process GCIB 128A. The control system 190 receives the sampled beam current collected by the beam current sensor 180 via the electrical cable and thereby monitors the GCIB and controls the GCIB dose received by the workpiece 152 by removing the workpiece 152 from the process GCIB128A under the following circumstances. In the embodiment illustrated in fig. 1, and with reference to fig. 9, the GCIB processing system 1'00' can be similar to the embodiment of fig. 8, and further includes an XY positioning stage 253 that is operable to hold and move the workpiece 252 in two axes to effectively scan the workpiece 252 relative to the process GCIB 128A. For example, an X action may include movement into and out of the plane of the paper, and a Y action may include movement in direction 264.
The process GCIB128A impacts the workpiece 252 at a projected impact region 286 on the surface of the workpiece 252 and at an angle of beam incidence 266 relative to the surface of the workpiece 252. With XY motion, the XY positioning stage 253 can position each portion of the surface of the workpiece 252 in the path of the process GCIB128A such that each region of the surface can be brought into registration with a protruding impact region 286 for processing by the process GCIB 128A. An X-Y controller 262 provides electrical signals to the X-Y positioning stage 253 via cables to control position and velocity in the X-axis and Y-axis directions. The X-Y controller 262 receives control signals from the control system 190 via a cable and is operable by the control system 190. The XY-positioning table 253 is moved in a continuous motion or a stepped motion in accordance with conventional XY-table positioning techniques to position different regions of the workpiece 252 within the projection impact region 286. In one embodiment, the XY positioning table 253 can be programmed to operate by a control system. 190 scan any portion of the workpiece 252 across the projected impingement region 286 at a programmable speed for GCIB processing by the process GCIB 128A.
The workpiece holding surface 254 of the positioning table 253 is electrically conductive and is connected to a dosimetry processor operated by the control system 190. An electrically insulating layer 255 of a positioning table 253 isolates the workpiece 252 and the workpiece holding surface 254 from the positioned base 260. The charge induced in the workpiece 252 by the impact process GCIB128A is conducted through the workpiece 252 and the workpiece holding surface 254, and a signal is coupled to the control system 190 through the positioning table 253 for dosimetry. Dosimetry has integration means for integrating GCIB current to determine GCIB treatment dose. In some cases, a tar neutralizing electron source (not shown), sometimes referred to as an electron flood, can be used to neutralize the process GCIB 128A. In this case, a faraday cup (not shown, but may be similar to the beam current sensor 180 in fig. 8) may be used to ensure accurate dosimetry despite the addition of a charge source, since typical faraday cups only allow high energy positive ions to enter and be measured.
In operation, the control system 190 signals the opening of the beam gate 148 to irradiate the workpiece 252 with the process GCIB 128A. The control system 190 monitors measurements of the GCIB current collected by the workpiece 252 to calculate the cumulative dose received by the workpiece 252. When the dose received by the workpiece 252 reaches the predetermined dose, the control system 190 closes the electron beam gate 148 and processing of the workpiece 252 is complete. Based on the GCIB dose measurements received for a given region of the workpiece 252, the control system 190 can adjust the scan speed in order to obtain appropriate beam dwell times to process different regions of the workpiece 252.
Alternatively, the process GCIB128A may be scanned over the surface of the workpiece 252 in a fixed pattern at a constant speed; alternatively, process 252 is scanned at a constant speed. However, the GCIB intensity is modulated (which may be referred to as Z-axis modulation) to deliver an intentionally non-uniform dose to the sample. GCIB intensity can be adjusted in GCIB processing system 100' by any of a variety of methods, including varying the flow of gas from the GCIB source. By varying the filament voltage VFOr changing the anode voltage VATo modulate the ionizer 122; by varying the lens voltage VL1And/or VL2To modulate the lens focus; or using a variable beam stop, adjustable shutter, or variable aperture to mechanically block a portion of the gas-cluster ion beam. The modulation variation may be a continuous analog variation or may be a time modulated switching or gating.
The process chamber 108 may further include an in-situ metrology system. For example, the in-situ metrology system may include an optical diagnostic system having an optical emitter 280 and an optical receiver 282, the optical emitter 280 and the optical receiver 282 configured to illuminate the workpiece 252 with an incident optical signal 284 and receive a scattered optical signal 288 from the workpiece 252. The optical diagnostic system includes an optical window to allow the incident optical signal 284 and the scattered optical signal 288 to enter and exit the process chamber 108. Further, the optical transmitter 280 and the optical receiver 282 may include transmitting and receiving optics, respectively. The optical transmitter 280 receives and responds to electrical signals from the control system 190. The optical receiver 282 returns the measurement signal to the control system 190.
The in-situ metrology system may include any instrument configured to monitor the progress of the GCIB processing. According to one embodiment, the in-situ metrology system may constitute an optical scatterometry system. Scatterometry systems may include scatterometers that combine a beam profile ellipsometer (ellipsometer) and a beam profile reflectometer (reflectometer), commercially available from thermal-Wave, Inc or Nanometrics, Inc.
For example, the in-situ metrology system may include an integrated optical digital profile measurement (idodp) scatterometry module configured to measure process performance data generated by the performance of a process in the GCIB processing system 100 ", measure or monitor metrology data generated by the process, e.g., metrology data may be used to determine process performance data characterizing the process, e.g., process rate, relative process rate, feature profile angle, critical dimension, feature thickness or depth, feature shape, etc. For example, in directionally depositing a material onto a workpiece, process performance data may include Critical Dimensions (CDs), such as top, middle, or bottom CD features (i.e., vias, lines, etc.), feature depths, material thicknesses, sidewall angles, sidewall shapes, deposition rates, relative deposition rates, the distribution of any parameter spatially distributing it, a parameter characterizing the uniformity of any spatial distribution thereof, and the like. The in-situ metrology system can map one or more features of the workpiece 252 by operating the X-Y positioning stage 253 via control signals of the control system 190.
In the embodiment illustrated in fig. 10, GCIB processing system 100 "may be similar to the embodiment of fig. 8, and further includes a pressure chamber 350, for example, located at or near the exit region of the ionization/acceleration chamber. 106 pressure sensor chamber 350 includes an inert gas supply 352 and a pressure sensor 354, the inert gas supply 352 configured to provide background gas to the pressure sensor chamber 350 to increase the pressure in the pressure sensor chamber 350, the pressure sensor 354 for measuring the increased pressure in the pressure sensor chamber in the chamber 350.
The pressure sensor chamber 350 can be configured to modify the beam energy distribution of the GCIB128 to produce a modified process GCIB 128A'. This change in beam energy distribution is achieved by directing the GCIB128 along a GCIB path through an increased pressure region within the pressure vessel chamber 350 such that at least a portion of the GCIB traverses the increased pressure region. The degree of change in beam energy distribution can be characterized by a pressure-distance integral along at least a portion of the GCIB path, where the distance (or length of the pressure chamber 350) is represented by the path length (d). As the value of the pressure-distance integral increases (by increasing the pressure and/or path length (d)), the beam energy distribution widens and the peak energy decreases. As the value of the pressure-distance integral decreases (by decreasing the pressure and/or path length (d)), the beam energy distribution narrows and the peak energy increases. More details of the design of the pressure sensor may be found in U.S. patent No.7,060,989 entitled "method and apparatus for improved processing with a gas cluster ion beam"; the contents of which are incorporated herein by reference in their entirety.
However, the control system 190 can be implemented as a general purpose computer system that performs a portion or all of the microprocessor based processing steps of the invention in response to a processor executing one or more sequences of one or more instructions contained in a memory. Such instructions may be read into the controller memory from another computer-readable medium, such as a hard disk or a removable media drive. One or more processors in a multi-processing arrangement may also be employed as the controller microprocessor to execute the sequences of instructions contained in main memory. In alternative embodiments, hard-wired circuitry may be used in place of or in combination with software instructions. Thus, embodiments are not limited to any specific combination of hardware circuitry and software.
As described above, the control system 190 may be used to configure any number of processing elements, and the control system 190 may collect, provide, process, store, and display data from the processing elements. The control system 190 may include a variety of applications and a variety of controllers for controlling one or more processing elements. For example, the control system 190 may include a Graphical User Interface (GUI) component (not shown) that may provide an interface that enables a user to monitor and/or control one or more processing elements.
The workpiece 152 (or 252) may be secured to the workpiece holder 150 (or 250) by a clamping system (not shown), such as a mechanical clamping system or an electrical clamping system (e.g., an electrostatic clamping system). In addition, the workpiece support 150 (or 250) may include a heating system (not shown) or a cooling system (not shown) configured to regulate and/or control the temperature of the workpiece support 150 (or 250) and the workpiece 152 (or 252).
The vacuum pumping systems 170A, 170B and 170C may include a turbo-molecular vacuum pump (IMP) capable of pumping speeds up to about 5000 liters per second (or more), and a gate valve for throttling the chamber pressure. In conventional vacuum processing equipment, a 1000 to 3000 liter per second TMP can be employed. TMPs can be used for low pressure processing, typically less than about 50 mTorr. Although not shown, it is understood that the pressure sensor chamber 350 may also include a vacuum pump system. Further, a device for monitoring the chamber pressure (not shown) may be connected to the vacuum vessel 102 or any of the three vacuum chambers 104, 106, 108. The pressure measuring device may be, for example, a capacitance manometer or an ionization gauge.
Reference is now made to the figures. In fig. 11, a portion 300 of a gas cluster ionizer (122, fig. 8, 9 and 10) for ionizing a gas cluster jet (gas cluster beam 118, fig. 8, 9 and 10) is shown. Cross-section 300 is perpendicular to the axis of GCIB 128. For a typical gas cluster size (2000 to 15000 atoms), the clusters leaving the separator aperture (120, fig. 8, 9 and 10) and entering the ionizer (122, fig. 8, 9 and 10) will travel with a kinetic energy of about 130 to 1000 electron volts (eV). At these low energies, any space charge neutrality in gas cluster ionizer 122 will result in rapid dispersion of the jet and significant loss of electron beam current. Fig. 11 shows a self-neutralizing ionizer. Like other ionizers, gas-clusters are ionized by electron impact. In this design, hot electrons (seven examples denoted by 310) are emitted from a plurality of linear thermionic filaments 302a, 302b and 302c (typically tungsten) and are extracted and focused by the action of an appropriate electric field provided by an electron repeller electrode 306 a. Electrodes 306a, 306b, and 306c and beam forming electrodes 304a, 304b, and 304 c. The hot electrons 310 pass through the gas-cluster jet and the jet axis and then strike the opposing beam-forming electrode 304b to produce low-energy secondary electrons (e.g., 312, 314, and 316 as shown).
Although not shown (for simplicity), the linear thermionic filaments 302b and 302c also generate hot electrons, which in turn generate low-energy secondary electrons. All secondary electrons help to ensure that the ionized cluster jet remains space charge neutral by providing low energy electrons that can be attracted to the positively ionized gas cluster jet as needed to maintain space charge neutrality. Beam forming electrodes 304a, 304b, and 304c are biased positively with respect to linear hot electron wires 302a, 302b, and 302c, and electron repulsion electrodes 306a, 306b, and 306c are biased negatively with respect to linear hot electron wires 302a, 302b, and 306 c. 302 c. Insulators 308a, 308b, 308c, 308d, 308e, and 308f electrically insulate and support electrodes 304a, 304b, 304c, 306a, 306b, and 306 c. For example, such self-neutralizing ionizers are effective and can achieve over 1000 microamps of argon GCIB.
Alternatively, the ionizer may use extraction of electrons from the plasma to ionize the cluster gas. The geometry of these ionizers is very different from the three filament ionizers described here, but the working principle and ionizer control are very similar. For example, the design of the ionizer may be similar to the ionizer described in U.S. patent No.5,235,641. U.S. patent No.7,173,252 entitled "ions for gas cluster ion formation-ions and methods"; the entire contents of which are incorporated herein by reference.
The gas cluster ionizer (122, fig. 8, 9 and 10) may be configured to change the beam energy distribution of the GCIB128 by changing the charge state of the GCIB 128. For example, the charge state can be changed by adjusting the electron flux. Electron energy or electron energy distribution of electrons utilized in gas cluster ionization for electron impact.
Although only certain embodiments of this invention have been described in detail above, those skilled in the art will readily appreciate that many modifications are possible in the embodiments without materially departing from the novel teachings and advantages of this invention. Accordingly, all such modifications are intended to be included within the scope of this invention.
Claims (10)
1. A method of adjusting a surface profile of a workpiece in gas cluster ion beam processing, characterized by acquiring metrology data relating to the surface profile of the workpiece surface;
calculating calibration data for the workpiece using the metrology data; data calculated from metrology data relating to a surface profile of a surface on the workpiece by the calibration data;
applying correction data to a workpiece cluster ion beam GCIB using a gas to selectively form or grow sacrificial material on one or more regions of a surface of the workpiece;
ion Beam (GCIB) growing or forming a sacrificial material on one or more surface regions of the workpiece selectively using gas-clusters, determining an amount of the sacrificial material formed on the one or more regions of the surface by the GCIB from the calibration data; performing an etching process to remove the sacrificial layer material and at least a portion of the surface on the workpiece:
adjusting a surface profile of the surface on the workpiece, fabricating a workpiece by performing an etching process, wherein the etching process comprises etching the sacrificial material at a first etch rate, and etching the workpiece at a second etch rate;
said applying said correction data to said workpiece comprises using said GCIB and varying a beam dose, a beam area, a beam profile, a beam intensity, a beam scan rate or an exposure time, or any combination of two or more thereof.
Wherein the etching process etches the sacrificial material at a first etch rate, the second etch rate being greater than the first etch rate, and wherein the performing the etching process planarizes the surface on the workpiece.
2. The method of claim 1, wherein the sacrificial material has a composition different from a material composition of the workpiece.
3. The method of claim 1, wherein the first etch rate is different than the second etch rate.
4. The method of claim 1, wherein said surface of said workpiece prior to said selectively forming has an initial surface profile, said initial surface profile having a maximum surface height and a minimum surface height;
depositing the sacrificial material to a height between the maximum surface height of the initial surface profile and the minimum surface height of the initial surface profile.
Wherein the second etch rate is greater than the first etch rate, and wherein the adjusting etches the workpiece material to at least the minimum surface height of the initial surface profile.
5. The method of claim 4, wherein after the adjusting, the surface of the workpiece comprises a final surface profile, and wherein a first difference between a maximum surface height of the final surface profile and a minimum surface height of the final surface profile is smaller. A second difference between the maximum surface height of the initial surface profile and the minimum surface height of the initial surface profile is greater.
6. The method of claim 5, wherein the sacrificial material is deposited to a height equal to or greater than the maximum surface height of the initial surface profile. The first etch rate and the second etch rate are approximately equal; the adjusting the surface profile of the surface includes substantially planarizing the surface of the workpiece.
7. The method of any of claims 1-6, wherein the metrology data is measured at a plurality of locations on the workpiece.
8. A method according to any of claims 1-6, characterized by determining the area and the maximum surface height of one or more second areas of the one or more first minimum surface heights initial uneven surface profile to establish an initial value of the height difference;
preparing correction data for a workpiece, the correction data calculated from metrology data relating to a surface profile of a surface on the workpiece; selectively forming sacrificial material on the one or more regions of the workpiece effective to increase the minimum surface height and decrease the height difference from the initial value using a Gas Cluster Ion Beam (GCIB), wherein an amount of the sacrificial material formed on the one or more regions of the surface is such that the GCIB is determined from the calibration data; and adjusting the surface profile of the workpiece to have a target surface profile in which the target value of the height difference is smaller than the initial value by performing an etching process after the selective formation, wherein the etching process includes etching the sacrificial material in a first etching. The workpiece is then etched at a second etch rate.
9. The method of claim 8, wherein the sacrificial material is selectively formed on the one or more first areas at a height between the maximum surface height and the minimum surface height of the initial uneven surface profile, and wherein the second etch rate is greater than the first etch rate, and wherein the adjusting etches the workpiece to at least the minimum surface height of the initial uneven surface profile.
10. The method of claim 8, wherein the sacrificial material is selectively formed on the one or more first areas to a height equal to or greater than the maximum surface height of the initial uneven surface profile, and wherein the first etch rate and the second etch rate are approximately equal; the target surface profile is planar.
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