CN112148143B - Detection circuit, driving method and substrate - Google Patents

Detection circuit, driving method and substrate Download PDF

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Publication number
CN112148143B
CN112148143B CN201910568166.6A CN201910568166A CN112148143B CN 112148143 B CN112148143 B CN 112148143B CN 201910568166 A CN201910568166 A CN 201910568166A CN 112148143 B CN112148143 B CN 112148143B
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electrode
transistor
circuit
signal
control signal
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CN112148143A (en
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曹学友
王海生
丁小梁
韩艳玲
王鹏鹏
李亚鹏
张平
邓立凯
王文娟
王佳斌
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416Control or interface arrangements specially adapted for digitisers
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electronic Switches (AREA)

Abstract

The invention provides a detection circuit, a driving method and a substrate, belongs to the technical field of sensors, and can at least partially solve the problem that the existing sensor circuit cannot be compatible with fingerprint identification and pressure touch detection. In the detection circuit, a signal conversion sub-circuit is used for converting a signal to be detected into a voltage signal and providing the voltage signal to a control electrode of a driving transistor; the first switch sub-circuit is used for controlling the on-off of a first pole of the driving transistor and a first detection output end according to a signal of a first gate control signal end; the second switch sub-circuit is used for controlling the on-off between the first pole of the driving transistor and the first signal end according to the signal of the second gate control signal end; the third switch sub-circuit is used for controlling the on-off between the second pole and the first power supply end of the driving transistor according to the signal of the third gate control signal end; the second pole of the driving transistor is also connected with a second detection output end.

Description

Detection circuit, driving method and substrate
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a detection circuit, a substrate and a driving method of the detection circuit.
Background
In the related art, a fingerprint recognition circuit is integrated in a display panel, and the operating principle of the fingerprint recognition circuit is that the fingerprint recognition circuit emits detection signals such as optical signals or ultrasonic signals and detects the intensity of the optical signals or ultrasonic signals (which can fluctuate the fingerprint recognition circuit in the display panel) reflected by fingerprints, so that the fingerprint lines are analyzed accordingly.
There is also an integrated pressure touch (Force touch) scheme in the display panel, where the function of the detection circuit can be summarized as converting the pressure signal of the finger to a dc voltage signal. There is no scheme compatible with fingerprint identification and pressure touch detection in the display substrate.
Disclosure of Invention
The invention at least partially solves the problem that the existing sensor circuit is compatible with fingerprint identification and pressure touch detection, and provides a detection circuit, a substrate and a driving method of the detection circuit.
The technical scheme adopted for solving the technical problem of the invention is that the detection circuit comprises a signal conversion sub-circuit, a driving transistor, a first switch sub-circuit, a second switch sub-circuit and a third switch sub-circuit; the signal conversion sub-circuit is used for converting a signal to be detected into a voltage signal and providing the voltage signal to a control electrode of the driving transistor; the first switch sub-circuit is connected with a first gate control signal end, a first pole of the driving transistor and a first detection output end and is used for controlling the on-off of the first pole of the driving transistor and the first detection output end according to a signal of the first gate control signal end; the second switch sub-circuit is connected with a second gate control signal end, a first pole of the driving transistor and a first signal end and is used for controlling the on-off between the first pole of the driving transistor and the first signal end according to signals of the second gate control signal end; the third switch sub-circuit is connected with a third gate control signal end, a second pole of the driving transistor and a first power end and is used for controlling the on-off between the second pole of the driving transistor and the first power end according to the signal of the third gate control signal end; the second pole of the driving transistor is also connected with a second detection output end.
Optionally, the first switch sub-circuit includes a first transistor, a control electrode of the first transistor is connected to the first gate control signal terminal, and a first electrode and a second electrode of the first transistor are respectively connected to the first electrode and the first detection output terminal of the driving transistor.
Optionally, the second switch sub-circuit includes a second transistor, a control electrode of the second transistor is connected to the second gate control signal terminal, and a first electrode and a second electrode of the second transistor are respectively connected to the first electrode and the first signal terminal of the driving transistor.
Optionally, the third switch sub-circuit includes a third transistor, a control electrode of the third transistor is connected to the third gate control signal terminal, and a first electrode and a second electrode of the third transistor are respectively connected to the second electrode and the first power supply terminal of the driving transistor.
Optionally, the signal conversion sub-circuit includes: a piezoelectric device, a first diode, a fourth transistor; the piezoelectric device comprises a superposed emitting electrode, a piezoelectric material layer and a receiving electrode, wherein the emitting electrode is connected with the first signal end, and the receiving electrode is connected with the control electrode of the driving transistor; the anode of the first diode is connected with a bias voltage end, and the cathode of the first diode is connected with the receiving electrode; the control electrode of the fourth transistor is connected with a fourth gate control signal end, the first electrode of the fourth transistor is connected with a reset signal end, and the second electrode of the fourth transistor is connected with the receiving electrode.
Optionally, the signal conversion sub-circuit includes: a piezoelectric device, a first diode, a fourth transistor; the piezoelectric device comprises a superposed emitting electrode, a piezoelectric material layer and a receiving electrode, wherein the emitting electrode is connected with the first signal end, and the receiving electrode is connected with the control electrode of the driving transistor; the anode of the first diode is connected with a bias voltage end, and the cathode of the first diode is connected with the receiving electrode; the control electrode of the fourth transistor is connected with a fourth gate control signal end, the first electrode of the fourth transistor is connected with the bias voltage end, and the second electrode of the fourth transistor is connected with the receiving electrode.
Optionally, the circuit further comprises a fifth switch sub-circuit, wherein the fifth switch sub-circuit is connected with a fifth gate control signal end, the receiving electrode and the control electrode of the driving transistor and is used for controlling the on-off between the control electrode of the driving transistor and the receiving electrode according to the signal of the fifth gate control signal end.
Optionally, the fifth switch sub-circuit includes a fifth transistor, a control electrode of the fifth transistor is connected to the fifth gate control signal terminal, and a first electrode and a second electrode of the fifth transistor are respectively connected to the receiving electrode and the control electrode of the driving transistor.
The technical scheme adopted for solving the technical problem of the invention is that the substrate comprises a base and a detection circuit arranged on the first side of the base, wherein the detection circuit is the detection circuit.
Optionally, the transmitting electrode is closer to the substrate than the receiving electrode, and a central region of the transmitting electrode is left empty to form a chamber.
Optionally, the display transistor is further disposed on the first side of the substrate, and the display transistor is used for driving the pixel to emit light.
Optionally, the display device further comprises an organic light emitting diode structure positioned on the first side of the substrate, and the organic light emitting diode structure is electrically connected with the display transistor.
Optionally, the active layer of the display transistor is disposed in the same layer as the active layer of the driving transistor, and the first and second poles of the display transistor and the first and second poles of the driving transistor are disposed in the same layer.
The technical scheme adopted by the embodiment of the invention is a driving method of the detection circuit, which comprises the following steps: in the fingerprint identification stage, an invalid signal is provided for the second grid control signal end, valid signals are provided for the first grid control signal end and the third grid control signal end, and a current signal is detected from the first detection output end; in the pressure detection stage, an invalid signal is provided to the first gate control signal terminal, valid signals are provided to the second gate control signal terminal and the third gate control signal terminal, and a voltage signal is detected from the second detection output terminal.
Drawings
FIG. 1 is a circuit diagram of a detection circuit according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of another detection circuit according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a substrate according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of another substrate according to an embodiment of the invention;
wherein, the reference numerals are as follows: t0, driving transistor; t0', a display transistor 1, a first switching sub-circuit; 2. a second switch sub-circuit; 3. a third switching sub-circuit; 4. a signal conversion sub-circuit; 5. a fifth switch sub-circuit; g1, a first grid control signal end; g2, a second gate control signal terminal; g3, a third gate control signal terminal; g4, a fourth gate control signal terminal; g5, a fifth gate control signal terminal; t1, a first transistor; t2, a second transistor; t3, third transistor; t4, fourth transistor; t5, fifth transistor; d1, a first diode; p1, a first signal end; OUT1, a first detection output; OUT2, the second detection output; VDD, a first power supply terminal; RST, reset signal end; VB, bias voltage end; t, transmitting electrode; PVDF, piezoelectric material layer; r, a receiving electrode; B. a substrate; a TEE, thin film encapsulation layer; l, an organic light emitting layer; v1, a cathode; v2, an anode; H. a chamber.
Detailed Description
The present invention will be described in further detail below with reference to the drawings and detailed description for the purpose of better understanding of the technical solution of the present invention to those skilled in the art.
In the present invention, the term "co-layer arrangement" means that both are formed from the same material layer, so that they are in the same layer in a stacked relationship, but do not represent that they are equidistant from the substrate, nor that they are exactly the same as the other layer structures between the substrate.
Example 1:
referring to fig. 1 and 2, the present embodiment provides a detection circuit including a signal conversion sub-circuit 4, a driving transistor T0, a first switching sub-circuit 1, a second switching sub-circuit 2, and a third switching sub-circuit 3; the signal conversion sub-circuit 4 is used for converting a signal to be detected into a voltage signal and providing the voltage signal to a control electrode of the driving transistor T0; the first switch sub-circuit 1 is connected with the first gate control signal end G1, the first pole of the driving transistor T0 and the first detection output end OUT1, and is used for controlling the on-off of the first pole of the driving transistor T0 and the first detection output end OUT1 according to the signal of the first gate control signal end G1; the second switch sub-circuit 2 is connected with the second gate control signal end G2, the first pole of the driving transistor T0 and the first signal end P1, and is used for controlling the on-off between the first pole of the driving transistor T0 and the first signal end P1 according to the signal of the second gate control signal end G2; the third switch sub-circuit 3 is connected with the third gate control signal end G3, the second pole of the driving transistor T0 and the first power end VDD, and is used for controlling the on-off between the second pole of the driving transistor T0 and the first power end VDD according to the signal of the third gate control signal end G3; the second pole of the driving transistor T0 is also connected to the second detection output terminal OUT2.
The signal conversion sub-circuit 4 converts a signal to be detected (for example, a fingerprint signal or a touch pressure signal) into a voltage signal, and then provides the voltage signal to the control electrode of the driving transistor T0. The voltage signal may be a signal varying over a relatively small range (e.g., a voltage signal converted from a fingerprint signal) or may be a signal fluctuating over a relatively large range (e.g., a signal converted from a touch pressure signal).
For an application scenario such as fingerprint recognition, the first pole of the driving transistor T0 may be controlled to be in a conductive state with the first detection output terminal OUT1, and the second pole of the driving transistor T0 may be controlled to be in a conductive state with the first power supply terminal VDD. The detection circuit externally connected with the first detection output end OUT1 is a current detection circuit. When the driving transistor T0 is in the operation state of the amplifying region, the source-drain current I (flowing from the first detection output OUT 1) of the driving transistor T0 is equal to the source-drain current IVoltage difference V between gate and source gs The relation between the two is: i=k (V gs -V th ) 2 Where k is a scaling factor, V th Is the threshold voltage. Because of the logical relationship of the quadratic function between the two, tiny fluctuation of the gate voltage (the source voltage basically keeps stable) can cause larger fluctuation of the source leakage current I, so that the peak and the ridge of the fingerprint can be accurately identified.
For an application scenario such as pressure touch, the first pole of the driving transistor T0 may be controlled to be in a conductive state with the first signal terminal P1, and the second pole of the driving transistor T0 may be controlled to be in a conductive state with the first power terminal VDD. The first signal terminal P1 is supplied with a stable voltage different from the first power terminal VDD, so that the second switching sub-circuit 2, the driving transistor T0, and the third switching sub-circuit 3 are effectively equivalent to 3 resistors connected in series, and a change in the voltage of the control electrode of the driving transistor T0 causes a change in the equivalent source-drain resistance thereof, thereby causing a change in the voltage of the second detection output terminal OUT2. It is easy to understand that, for such a detection mode, the variation range of the voltage signal output from the second detection output terminal OUT2 is relatively small, and thus, is not easily OUT of range.
The detection circuit can realize the conversion from a voltage signal to a current signal or the conversion from the voltage signal to the voltage signal by controlling different switch sub-circuits, and can cope with the scenes with smaller measuring range and higher precision requirements and the scenes with larger measuring range and lower precision requirements.
Optionally, the first switch sub-circuit 1 includes a first transistor T1, a control electrode of the first transistor T1 is connected to the first gate control signal terminal G1, and a first electrode and a second electrode of the first transistor T1 are respectively connected to a first electrode of the driving transistor T0 and the first detection output terminal OUT1.
Optionally, the second switching sub-circuit 2 includes a second transistor T2, a control electrode of the second transistor T2 is connected to the second gate control signal terminal G2, and a first electrode and a second electrode of the second transistor T2 are respectively connected to the first electrode and the first signal terminal P1 of the driving transistor T0.
Optionally, the third switching sub-circuit 3 includes a third transistor T3, a control electrode of the third transistor T3 is connected to the third gate control signal terminal G3, and a first electrode and a second electrode of the third transistor T3 are respectively connected to the second electrode of the driving transistor T0 and the first power supply terminal VDD.
Namely, a transistor is specifically adopted to realize the switching function. The manner in which the switching function is implemented is of course not limited thereto.
Optionally, referring to fig. 1, the signal conversion sub-circuit 4 includes: a piezoelectric device, a first diode D1, a fourth transistor T4; the piezoelectric device comprises a superposed transmitting electrode T, a piezoelectric material layer PVDF and a receiving electrode R, wherein the transmitting electrode T is connected with a first signal end P1, and the receiving electrode R is connected with a control electrode of a driving transistor T0; the anode of the first diode D1 is connected with the bias voltage end VB, and the cathode of the first diode D1 is connected with the receiving electrode R; the control electrode of the fourth transistor T4 is connected to the fourth gate control signal terminal G4, the first electrode of the fourth transistor T4 is connected to the reset signal terminal RST, and the second electrode of the fourth transistor T4 is connected to the receiving electrode R.
In this embodiment, the reset signal terminal RST connected to the first pole of the fourth transistor T4 and the bias voltage terminal VB connected to the anode of the first diode D1 are both voltage terminals independent of each other. So configured, when it is desired to emit sound waves, an alternating voltage may be applied to the transmitting electrode T or may be applied to the receiving electrode R through the fourth transistor T4. This may lead to flexibility in the manner of driving. For a detailed driving procedure see example 2.
Optionally, referring to fig. 2, the signal conversion sub-circuit 4 includes: a piezoelectric device, a first diode D1, a fourth transistor T4; the piezoelectric device comprises a superposed transmitting electrode T, a piezoelectric material layer PVDF and a receiving electrode R, wherein the transmitting electrode T is connected with a first signal end P1, and the receiving electrode R is connected with a control electrode of a driving transistor T0; the anode of the first diode D1 is connected with the bias voltage end VB, and the cathode of the first diode D1 is connected with the receiving electrode R; the control electrode of the fourth transistor T4 is connected to the fourth gate control signal terminal G4, the first electrode of the fourth transistor T4 is connected to the bias voltage terminal VB, and the second electrode of the fourth transistor T4 is connected to the receiving electrode R.
In this embodiment, the first pole of the fourth transistor T4 and the anode of the first diode D1 are both connected to the bias voltage terminal VB. In this embodiment, when it is necessary to emit an acoustic wave, only an alternating voltage signal can be applied to the emitter electrode T. For a detailed driving procedure see example 2.
Optionally, the circuit further comprises a fifth switch sub-circuit 5, wherein the fifth switch sub-circuit 5 is connected with the fifth gate control signal end G5, the receiving electrode R and the control electrode of the driving transistor T0, and is used for controlling the on-off between the control electrode of the driving transistor T0 and the receiving electrode R according to the signal of the fifth gate control signal end G5.
The fifth switch sub-circuit 5 is constituted by a fifth transistor T5 as shown in the drawings, for example. That is, the fifth switching sub-circuit 5 includes a fifth transistor T5, a control electrode of the fifth transistor T5 is connected to the fifth gate control signal terminal G5, and a first electrode and a second electrode of the fifth transistor T5 are respectively connected to the receiving electrode R and a control electrode of the driving transistor T0. The function is to switch off the connection between the signal conversion sub-circuit 4 and the driving transistor T0 when signal detection is not required.
Example 2:
referring to fig. 3 and 4, the present embodiment provides a substrate, which includes a substrate B and a detection circuit disposed on a first side of the substrate B, where the detection circuit is the detection circuit of embodiment 1.
I.e. the detection circuit provided by the embodiment is manufactured on the substrate.
Specifically, the transmitting electrode T is closer to the substrate B than the receiving electrode R, and a central region of the transmitting electrode T is provided in a hollow to form the chamber H. The provision of the chamber H further facilitates the emission of sound waves.
In the embodiment shown in fig. 3, the detection circuit is encapsulated by a thin film encapsulation layer TEE. The middle part of the transmitting electrode T is hollow to form a cavity, which is favorable for the conduction of sound wave vibration.
Optionally, a display transistor T0 'disposed on the first side of the substrate B is further included, the display transistor T0' being for driving the pixel to emit light.
The detection circuit can be fabricated on the substrate and the transistor for performing display driving can be fabricated. I.e. the detection circuit may be integrated in the display substrate.
Optionally, an organic light emitting diode structure is further included on the first side of the substrate B, the organic light emitting diode structure being electrically connected to the display transistor T0'. Specifically, the cathode V1, the organic light emitting layer L, and the anode V2 form an organic light emitting diode structure. The display transistor T0' controls the voltage of the anode V2. Cathode V1 may be grounded or at a common ground potential.
Alternatively, the active layer of the display transistor T0 'is arranged in the same layer as the active layer of the driving transistor T0, and the first and second poles of the display transistor T0' and the first and second poles of the driving transistor T0 are arranged in the same layer. That is, the display transistor T0' and the driving transistor T0 may be simultaneously formed on the substrate B using the same process steps.
The substrate can be used for coping with detection scenes with smaller measuring ranges and higher precision requirements, and also can be used for coping with detection scenes with larger measuring ranges and lower precision requirements.
Example 3:
the present embodiment provides a driving method of the detection circuit of embodiment 1, including: when the voltage signal is a voltage signal within a first voltage range, an invalid signal is provided to the second gate control signal terminal G2, and valid signals are provided to the first gate control signal terminal G1 and the third gate control signal terminal G3; when the voltage signal is a voltage signal within a second voltage range, an invalid signal is provided to the first gate control signal terminal G1, and valid signals are provided to the second gate control signal terminal G2 and the third gate control signal terminal G3; the first voltage range is less than the second voltage range.
Namely, when the measuring range is smaller, detecting by adopting a mode of converting a voltage signal into a current signal; the large measuring range makes the voltage signal converted into another voltage signal by adopting a resistor voltage division mode for detection. In this way, different application scenarios can be handled.
Taking the circuit configuration shown in fig. 1 as an example, a detailed driving process will be described.
For the transmission of the acoustic wave, a square wave voltage signal may be provided to the first signal terminal P1, a stable low voltage may be provided to the bias voltage terminal VB and the reset signal terminal RST, an effective voltage may be provided to the fourth gate control signal terminal G4, an ineffective voltage may be provided to the fifth gate control signal terminal G5, and an ac voltage may be applied to both ends of the piezoelectric material layer PVDF, so that deformation may occur, and thus the acoustic wave may be emitted.
Of course, for the transmission of the acoustic wave, a stable low voltage may be provided to the first signal terminal P1, a stable low level may be provided to the bias voltage terminal VB, a square wave voltage signal may be provided to the reset signal terminal RST, an effective voltage may be provided to the fourth gate control signal terminal G4, and an ineffective voltage may be provided to the fifth gate control signal terminal G5, so that the alternating voltage may be applied to both ends of the piezoelectric material layer PVDF, thereby generating the deformation and further emitting the acoustic wave.
For the detection of acoustic waves, a fixed low voltage may be provided to the first signal terminal P1, a high voltage may be provided to the bias voltage terminal VB, an inactive voltage may be provided to the fourth gate control signal terminal G4, and an active voltage may be provided to the fifth gate control signal terminal G5. So that the vibration of the sound wave brings about a voltage change of the node a in the drawing (i.e., the node to which the receiving electrode R is connected). At this time, an effective voltage may be provided to the first gate control signal terminal G1 and the third gate control signal terminal G3, and an ineffective voltage may be provided to the second gate control signal terminal G2, so as to implement signal detection in a manner of converting a voltage signal into a current signal.
For pressure detection, a ground voltage may be provided to the first signal terminal P1, an inactive voltage may be provided to the fourth gate control signal terminal G4, a negative voltage may be provided to the bias voltage terminal VB, and an active voltage may be provided to the fifth gate control signal terminal G5, so that the piezoelectric material layer PVDF converts the pressure received thereby into a voltage signal to be provided to the control electrode of the driving transistor T0. At this time, an effective voltage is supplied to the third gate control signal terminal G3, an effective voltage is supplied to the second gate control signal terminal G2, an ineffective voltage is supplied to the first gate control signal terminal G1, and an external voltage detection circuit detects a change in the voltage signal of the second detection output terminal OUT2, thereby deducing the magnitude of the pressure signal.
Of course, if the circuit configuration shown in fig. 2 is adopted, only the square wave voltage signal can be supplied to the first signal terminal P1, the stable low voltage can be supplied to the bias voltage terminal VB, the effective voltage can be supplied to the fourth gate control signal terminal G4, the ineffective voltage can be supplied to the fifth gate control signal terminal G5, and the alternating voltage can be applied to both ends of the piezoelectric material layer PVDF, thereby generating deformation and further generating sound waves.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.

Claims (14)

1. The detection circuit is characterized by comprising a signal conversion sub-circuit, a driving transistor, a first switch sub-circuit, a second switch sub-circuit and a third switch sub-circuit;
the signal conversion sub-circuit is used for converting a signal to be detected into a voltage signal and providing the voltage signal to a control electrode of the driving transistor;
the first switch sub-circuit is connected with a first gate control signal end, a first pole of the driving transistor and a first detection output end and is used for controlling the on-off of the first pole of the driving transistor and the first detection output end according to a signal of the first gate control signal end;
the second switch sub-circuit is connected with a second gate control signal end, a first pole of the driving transistor and a first signal end and is used for controlling the on-off between the first pole of the driving transistor and the first signal end according to signals of the second gate control signal end;
the third switch sub-circuit is connected with a third gate control signal end, a second pole of the driving transistor and a first power end and is used for controlling the on-off between the second pole of the driving transistor and the first power end according to the signal of the third gate control signal end;
the second pole of the driving transistor is also connected with a second detection output end.
2. The detection circuit of claim 1, wherein the first switching sub-circuit comprises a first transistor having a control electrode coupled to the first gate control signal terminal, and a first electrode and a second electrode coupled to the first electrode and the first detection output terminal, respectively.
3. The detection circuit of claim 1, wherein the second switching sub-circuit comprises a second transistor, a control electrode of the second transistor is connected to the second gate control signal terminal, and a first electrode and a second electrode of the second transistor are respectively connected to the first electrode and the first signal terminal of the driving transistor.
4. The detection circuit of claim 1, wherein the third switching sub-circuit comprises a third transistor, a control electrode of the third transistor is connected to the third gate control signal terminal, and a first electrode and a second electrode of the third transistor are respectively connected to the second electrode and the first power supply terminal of the driving transistor.
5. The detection circuit of claim 1, wherein the signal conversion sub-circuit comprises: a piezoelectric device, a first diode, a fourth transistor;
the piezoelectric device comprises a superposed emitting electrode, a piezoelectric material layer and a receiving electrode, wherein the emitting electrode is connected with the first signal end, and the receiving electrode is connected with the control electrode of the driving transistor;
the anode of the first diode is connected with a bias voltage end, and the cathode of the first diode is connected with the receiving electrode;
the control electrode of the fourth transistor is connected with a fourth gate control signal end, the first electrode of the fourth transistor is connected with a reset signal end, and the second electrode of the fourth transistor is connected with the receiving electrode.
6. The detection circuit of claim 1, wherein the signal conversion sub-circuit comprises: a piezoelectric device, a first diode, a fourth transistor;
the piezoelectric device comprises a superposed emitting electrode, a piezoelectric material layer and a receiving electrode, wherein the emitting electrode is connected with the first signal end, and the receiving electrode is connected with the control electrode of the driving transistor;
the anode of the first diode is connected with a bias voltage end, and the cathode of the first diode is connected with the receiving electrode;
the control electrode of the fourth transistor is connected with a fourth gate control signal end, the first electrode of the fourth transistor is connected with the bias voltage end, and the second electrode of the fourth transistor is connected with the receiving electrode.
7. The detection circuit according to claim 5 or 6, further comprising a fifth switch sub-circuit, wherein the fifth switch sub-circuit is connected to a fifth gate control signal terminal, the receiving electrode, and the control electrode of the driving transistor, and is configured to control on/off between the control electrode of the driving transistor and the receiving electrode according to a signal of the fifth gate control signal terminal.
8. The detection circuit of claim 7, wherein the fifth switching sub-circuit comprises a fifth transistor, a control electrode of the fifth transistor being connected to the fifth gate control signal terminal, a first electrode and a second electrode of the fifth transistor being connected to the receiving electrode and the control electrode of the driving transistor, respectively.
9. A substrate comprising a base and a detection circuit arranged on a first side of the base, the detection circuit being according to any one of claims 1-8.
10. The substrate according to claim 9, wherein when the detection circuit is the detection circuit according to claim 5, the transmitting electrode is closer to the base than the receiving electrode, and a central region of the transmitting electrode is provided in a void to form a chamber.
11. The substrate of claim 9, further comprising a display transistor disposed on a first side of the base, the display transistor configured to drive a pixel to emit light.
12. The substrate of claim 11, further comprising an organic light emitting diode structure on a first side of the base, the organic light emitting diode structure electrically connected to the display transistor.
13. The substrate according to claim 12, wherein an active layer of the display transistor is provided in the same layer as an active layer of the driving transistor, and wherein the first and second poles of the display transistor and the first and second poles of the driving transistor are provided in the same layer.
14. A driving method of the detection circuit according to any one of claims 1 to 8, comprising:
in the fingerprint identification stage, an invalid signal is provided for the second grid control signal end, valid signals are provided for the first grid control signal end and the third grid control signal end, and a current signal is detected from the first detection output end;
in the pressure detection stage, an invalid signal is provided to the first gate control signal terminal, valid signals are provided to the second gate control signal terminal and the third gate control signal terminal, and a voltage signal is detected from the second detection output terminal.
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