CN112147812A - Silicon-based liquid crystal device - Google Patents

Silicon-based liquid crystal device Download PDF

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Publication number
CN112147812A
CN112147812A CN202011134105.8A CN202011134105A CN112147812A CN 112147812 A CN112147812 A CN 112147812A CN 202011134105 A CN202011134105 A CN 202011134105A CN 112147812 A CN112147812 A CN 112147812A
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CN
China
Prior art keywords
layer
liquid crystal
sub
conductive glass
grating layer
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Pending
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CN202011134105.8A
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Chinese (zh)
Inventor
李爱源
熊培成
吴梓荣
陈嵘
洪俊斌
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Shenzhen AV Display Co Ltd
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Shenzhen AV Display Co Ltd
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Priority to CN202011134105.8A priority Critical patent/CN112147812A/en
Publication of CN112147812A publication Critical patent/CN112147812A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133504—Diffusing, scattering, diffracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide

Abstract

The invention provides a silicon-based liquid crystal device which comprises a liquid crystal box and a liquid crystal layer poured into the liquid crystal box, wherein the liquid crystal box comprises conductive glass and a substrate, the conductive glass and the substrate are attached to each other, a first orientation layer is arranged close to the conductive glass, a pixel layer, a reflection grating layer and a second orientation layer are sequentially arranged close to the substrate, external communication light vertically enters the substrate and sequentially passes through the conductive glass, the first orientation layer and the liquid crystal layer, and the second orientation layer and the reflection grating layer to reach the pixel layer for reflection. The reflectivity determines the insertion loss of the liquid crystal on silicon device, and the high-reflectivity liquid crystal on silicon device has low insertion loss.

Description

Silicon-based liquid crystal device
Technical Field
The invention relates to the field of liquid crystal on silicon optics, in particular to a liquid crystal on silicon device.
Background
LCOS (liquid Crystal on silicon) is a mature advanced technology. The display is a novel LCD display manufactured on monocrystalline silicon and is an emerging technology for organically combining an LCD and a CMOS integrated circuit. LCOS has the features of high resolution, reflecting imaging and low cost. This technology was first shown to occur in the late nineties of the last century. The first molded product was developed by Aurora Systems company in 2000, and because the product has the characteristics of high resolution, high aperture ratio and reflective imaging, the product immediately receives high attention from people, and many enterprises begin to research and develop. Such as enterprises like sony, JVC, canon, intel, philips, and tailian.
The LCOS is a liquid crystal device with a reflection mode, reflects or deflects light by utilizing a mirror plated on a pixel electrode, and has high requirements on reflectivity because the LCOS based on the WSS needs to reduce insertion loss in the application fields of AR/VR glasses, optical communication WSS and the like.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the silicon-based liquid crystal device is provided to solve the problems of low reflectivity and high insertion loss of the existing silicon-based liquid crystal device.
In order to solve the technical problems, the invention adopts the technical scheme that: the liquid crystal display device comprises a liquid crystal box and a liquid crystal layer filled into the liquid crystal box, wherein the liquid crystal box comprises conductive glass and a substrate, the conductive glass and the substrate are attached to each other, a first orientation layer is arranged close to the conductive glass, a pixel layer, a reflection grating layer and a second orientation layer are sequentially arranged close to the substrate, external communication light is vertically incident and sequentially passes through the conductive glass, the first orientation layer and the liquid crystal layer, and the second orientation layer and the reflection grating layer reach the pixel layer to be reflected.
Further, the reflection grating layer comprises a sub-wavelength grating layer, and the refractive index of the sub-wavelength grating layer is Na.
Furthermore, the sub-wavelength grating layer is made of Si3N4、Si、Ta2O5、ZrO2And TiO2Any one of them.
Further, the period size of the sub-wavelength grating layer is between lambda/5-lambda, lambda is the wavelength of incident light, the width of the sub-wavelength grating layer is between 100nm and 1200nm, and the height of the sub-wavelength grating layer is between 50nm and 1200 nm.
Furthermore, the reflection grating layer comprises a first peripheral medium layer, a sub-wavelength grating layer and a second peripheral medium layer which are arranged from top to bottom, and the height of the first peripheral medium layer is h2The height of the second peripheral medium layer is h3Wherein h is2And h3The size range is 0nm-5000nm, and the grating structure further comprises a third peripheral medium layer which is filled in the gap area of the grating layer.
Further, the first peripheral dielectric layer is SiO2、MgF2、Si3N4、Si、Ta2O5、ZrO2And TiO2Wherein the second peripheral dielectric layer is SiO2、MgF2、Si3N4、Si、Ta2O5、ZrO2And TiO2Wherein the third peripheral dielectric layer is SiO2、MgF2、Si3N4、Si、Ta2O5、ZrO2And TiO2In the above-mentioned optical grating, the refractive indexes of the first peripheral medium layer, the second peripheral medium layer and the third peripheral medium layer are all higher than the refractive index of the optical grating layer.
Furthermore, the conductive glass is borosilicate ITO conductive glass, and the thermal expansion coefficient of the borosilicate ITO conductive glass ranges from 2.8 ppm/DEG C to 6 ppm/DEG C.
Further, the first alignment layer is polyimide or an evaporated inorganic substance, and the second alignment layer is polyimide or an evaporated inorganic substance.
Further, the sub-wavelength grating is any one of photoetching or chemical polishing.
The invention has the beneficial effects that: the communication light vertically enters the LCOS, passes through the conductive glass, the first orientation layer, the liquid crystal layer, the second orientation layer and the reflection grating, reaches the pixel layer, is reflected by the reflector, and accordingly deflection of the communication light is achieved. The addition of the reflective grating layer increases the reflectivity to a level that is satisfactory for the application (up to 98%). The reflectivity determines the magnitude of the insertion loss of the LCOS, and a high reflectivity LCOS has a low insertion loss.
Drawings
The detailed structure of the invention is described in detail below with reference to the accompanying drawings
FIG. 1 is a schematic structural diagram of a liquid crystal on silicon device according to the present invention.
FIG. 2 is a schematic diagram of a sub-wavelength grating structure of a liquid crystal on silicon device according to the present invention.
FIG. 3 is a partial liquid crystal layout of a liquid crystal on silicon device according to the present invention.
The reference numbers are as follows:
1-conductive glass; 2-a first alignment layer; 3-a liquid crystal layer; 4-a second alignment layer; 5-a reflective grating layer; 6-pixel layer; 7-a substrate; 51-grating period length; 52-grating length.
Detailed Description
In order to explain technical contents, structural features, and objects and effects of the present invention in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1, the present invention provides a liquid crystal on silicon device, including a liquid crystal cell and a liquid crystal layer 3 filled in the liquid crystal cell, where the liquid crystal cell includes a conductive glass 1 and a substrate 7, the conductive glass 1 and the substrate 7 are attached to each other, a first alignment layer 2 is disposed near the conductive glass 1, a pixel layer 6, a reflective grating layer 5 and a second alignment layer 4 are sequentially disposed near the substrate 7, external communication light is vertically incident, and reaches the pixel layer 6 to be reflected through the conductive glass 1, the first alignment layer 2, the liquid crystal layer 3, the second alignment layer 4 and the reflective grating layer 5 in sequence.
Specifically, the first orientation layer 2 and the second orientation layer 4 are respectively deposited on the conductive glass 1 and the silicon-based substrate 7 containing the reflection grating layer through relief printing or evaporation; the conductive glass 1 and the silicon-based substrate 7 are bonded through frame glue to form a liquid crystal box, and finally liquid crystal is poured into the liquid crystal box.
The driving control unit is a peripheral driving board, and is connected with the substrate 7 to control the voltage of each pixel on the substrate 7 chip. The LCOS adopts one of an ECB mode, a VA mode or a TN mode. The communication light vertically enters the LCOS, passes through the upper conductive glass 1, the first orientation layer 2, the liquid crystal layer 3 and the second orientation layer 4, the reflection grating reaches the pixel layer 6, the reflector reflects, the liquid crystal molecules drive the substrate 7 chip through the driving board, the torsion angle control of the liquid crystal molecules on each pixel is realized, the optical path difference corresponding to the incident light is controlled, when a certain strip-shaped pattern is loaded, the regular arrangement of the liquid crystal is realized, and the regular arrangement can be equivalent to a blazed grating, and the deflection of the communication light is realized. The addition of the reflective grating layer increases the reflectivity to a level that is satisfactory for the application (up to 98%). The reflectivity determines the magnitude of the insertion loss of the LCOS, and a high reflectivity LCOS has a low insertion loss.
Example 1
The reflection grating layer 5 comprises a sub-wavelength grating layer, and the refractive index of the sub-wavelength grating layer is Na. The sub-wavelength grating layer is any one of photoetching or chemical polishing.
Specifically, the sub-wavelength grating layer may be fabricated in the whole LCOS display area, or in a plurality of areas of the whole LCOS display portion. The sub-wavelength grating layer manufacturing method includes but is not limited to photolithography and chemical polishing. The reflective grating layer 5 is used to improve the reflectivity, and the loss of the communication light is minimized in the process of entering and reflecting (via deflection) the communication light, and the reflectivity of the side of the silicon-based substrate needs to be as large as possible, and the grating layer further improves the reflectivity.
Example 2
The sub-wavelength grating layer is made of Si3N4, Si and Ta2O5、ZrO2And TiO2Any one of them. The period size of the sub-wavelength grating layer is between lambda/5-lambda, lambda is the wavelength of incident light, the width of the sub-wavelength grating layer is between 100nm and 1200nm, and the height of the sub-wavelength grating layer is between 50nm and 1200 nm.
In particular, the pixel layer 6 is a display device, which is similar to a display device, wherein different pixels realize different colors and brightness, and different voltages are applied to the pixels, so that liquid crystals above the pixel layer are deflected by different angles. The pixel layer 6 comprises a pixel electrode, a sub-wavelength grating layer structure is adopted above the pixel electrode to further increase the reflectivity of the LCOS, specifically, the reflection layer structure is a sub-wavelength grating layer, and the grating period is in a sub-wavelength level. The pixel electrode is connected with the source electrode or the drain electrode of the silicon-based chip through the conduction tube, voltage loading is carried out on the liquid crystal layer together with the ITO public electrode, phase regulation is achieved, the pixel electrode is provided with a metal mirror surface, and the metal material can be any one of Cu, Al, Au and Ag, so that the reflectivity is improved. The conducting tube is a pipeline for conducting between the driving transistor and the pixel electrode under the chip, an insulating layer is arranged between the driving transistor and the pixel electrode, and the voltage on the pixel can be controlled only by connecting the conducting tube. The communication light is vertically incident, under the condition of no modulation, the LCOS acts like a reflector, and the light returns in the original path; under the condition of loading a modulation signal, the modulation signal is loaded to enable the liquid crystal layer to regularly twist and equivalently form a blazed grating, light is diffracted in the order of +1 or-1, the light is emitted at a certain deflection angle, and the reflectivity of the pixel layer is increased so as to reduce the light energy loss in the process.
Example 3
Referring to fig. 2, the reflective grating layer 5 includes a first peripheral dielectric layer, a sub-wavelength grating layer and a second peripheral dielectric layer from top to bottom, the first peripheral dielectric layer has a height h2The height of the second peripheral medium layer is h3Wherein h is2And h3The size range is 0nm-5000nm, and the device also comprises a third peripheral medium layer which is filled in the gap area of the sub-wavelength grating layer.
Specifically, the refractive index of the first peripheral medium layer is Nr1, the refractive index of the second peripheral medium layer is Nr2, and the refractive index of the third peripheral medium layer is Nr3, wherein Nr1, Nr2 and Nr3 may be the same or different. The first peripheral medium layer is higher than the sub-wavelength grating layer region h2 and ranges from 0nm to 5000nm, and the second peripheral medium layer is below the sub-wavelength grating layer h3The range is between 0nm and 5000nm, and the contact surface of the liquid crystal layer and the liquid crystal layer is a flat layer, which can be used as a liquid crystal second orientation layer at the same time, or a liquid crystal second orientation layer can be deposited on the layer. The reflectance is designed to be 99% or more by design software FDTD, RCWA, and the like.
Example 4
The conductive glass is borosilicate ITO conductive glass, and the expansion coefficient range of the conductive glass is 2.8 ppm/DEG C-6 ppm/DEG C. The first alignment layer 2 is polyimide or evaporated oxide, and the second alignment layer 4 is polyimide.
Specifically, please refer to fig. 2, wherein W is a grating period length 51, and L is a grating length 52 indicating a specific size of the grating; the conductive glass 1 is used for providing a common electrode and is conductive on the whole surface. The conductive glass 1 is coated with an AR coating on the side close to the air, and has the function of increasing transmission. And an ITO conductive layer is arranged on one side close to the liquid crystal and is used as a common electrode for liquid crystal regulation.
The first alignment layer 2 and the second alignment layer 4 serve to align liquid crystal alignment. Referring to fig. 1, the liquid crystal is in a state where it is not applied with a modulation signal. Referring to fig. 3, fig. 3 is only a portion where the liquid crystal is arranged. At this time, the liquid crystal adds a modulation signal, and at this time, the tilt angle of the liquid crystal is changed slowly, and the communication light is modulated after passing through.
The first alignment layer 2 and the second alignment layer 4 may be polyimide or obliquely evaporated oxide, such as SiO2，Si3N4And the like, an oblique evaporation process is adopted. Preferably, adopt SiO2 according to certain angle slope evaporation plating process, the slope evaporation plating angle is in 20 ~ 90 within ranges, adopts this evaporation plating process to have following advantage: the optical temperature property of the device is better; the refractive index of the obtained material is 1.1-1.5 by oblique evaporation, and the material is different according to different evaporation process parameters, so that the reflectivity of an interface is improved. The second alignment layer 4 may be a grating surrounding medium such as SiO2, or may be deposited on the grating surrounding medium for aligning the liquid crystal molecules.
The liquid crystal molecule layer adopts proper birefringence liquid crystal molecules and thickness to reach 1.25 lambda of Deltan and lambda is the wavelength of incident light so as to realize the enough phase control depth of the communication wave band. The liquid crystal cell adopts one of ECB, VA, TN and STN modes, and preferably adopts an ECB mode.
In summary, in the liquid crystal on silicon device provided by the present invention, communication light vertically enters the LCOS, passes through the conductive glass 1, the first alignment layer 2, the liquid crystal layer 3, the second alignment layer 4, and the reflective grating layer 5, reaches the pixel layer 6, and is reflected by the reflector, and the substrate 7 chip is driven by the liquid crystal molecules through the driving board, so as to realize the control of the twist angle of the liquid crystal molecules on each pixel, thereby controlling the optical path difference corresponding to the incident light, and when a certain stripe pattern is loaded, the regular arrangement of the liquid crystal arrangement is realized, which is equivalent to a blazed grating, thereby realizing the deflection of the communication light. By software fitting, the reflectivity of the LCOS with the grating structure can reach more than 98% near the wavelength of incident light. The reflectivity determines the magnitude of the insertion loss of the LCOS, and a high reflectivity LCOS has a low insertion loss.
The first … … and the second … … are only used for name differentiation and do not represent how different the importance and position of the two are. Here, the upper, lower, left, right, front, and rear represent only relative positions thereof and do not represent absolute positions thereof.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (9)

1. A liquid crystal on silicon device, comprising: the liquid crystal display panel comprises a liquid crystal box and a liquid crystal layer poured into the liquid crystal box, wherein the liquid crystal box comprises conductive glass and a substrate, the conductive glass and the substrate are attached to each other, a first orientation layer is arranged close to the conductive glass, a pixel layer, a reflection grating layer and a second orientation layer are sequentially arranged close to the substrate, external communication light vertically enters the substrate and sequentially passes through the conductive glass, the first orientation layer and the liquid crystal layer, and the second orientation layer and the reflection grating layer reach the pixel layer to be reflected.
2. A liquid crystal on silicon device as defined in claim 1 wherein: the reflection grating layer comprises a sub-wavelength grating layer, and the refractive index of the sub-wavelength grating layer is Na.
3. A liquid crystal on silicon device as defined in claim 2 wherein: the sub-wavelength grating layer is made of Si3N4、Si、Ta2O5、ZrO2And TiO2Any one of them.
4. A liquid crystal on silicon device as claimed in claim 2 or 3, wherein: the period size of the sub-wavelength grating layer is between lambda/5-lambda, lambda is the wavelength of incident light, the width of the sub-wavelength grating layer is between 100nm and 1200nm, and the height of the sub-wavelength grating layer is between 50nm and 1200 nm.
5. A liquid crystal on silicon device as defined in claim 4 wherein: the reflection grating layer comprises a first peripheral medium layer, a sub-wavelength grating layer and a second peripheral medium layer which are arranged from top to bottom, and the height of the first peripheral medium layer is h2The height of the second peripheral medium layer is h3Wherein h is2And h3The size range is 0nm-5000nm, and the device also comprises a third peripheral medium layer which is filled in the gap area of the sub-wavelength grating layer.
6. A liquid crystal on silicon device as defined in claim 5 wherein: the first peripheral dielectric layer is SiO2、MgF2、Si3N4、Si、Ta2O5、ZrO2And TiO2Wherein the second peripheral dielectric layer is SiO2、MgF2、Si3N4、Si、Ta2O5、ZrO2And TiO2Wherein the third peripheral dielectric layer is SiO2、MgF2、Si3N4、Si、Ta2O5、ZrO2And TiO2In any one of the above embodiments, the refractive indexes of the first peripheral medium layer, the second peripheral medium layer, and the third peripheral medium layer are all higher than the refractive index of the sub-wavelength grating layer.
7. A liquid crystal on silicon device as defined in claim 1 wherein: the conductive glass is borosilicate ITO conductive glass, and the thermal expansion coefficient range of the borosilicate ITO conductive glass is 2.8 ppm/DEG C-6 ppm/DEG C.
8. A liquid crystal on silicon device as defined in claim 1 wherein: the first orientation layer is polyimide or an evaporated inorganic matter, and the second orientation layer is polyimide or an evaporated inorganic matter.
9. A liquid crystal on silicon device as defined in claim 2 wherein: the sub-wavelength grating layer is any one of photoetching or chemical polishing.
CN202011134105.8A 2020-10-21 2020-10-21 Silicon-based liquid crystal device Pending CN112147812A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117215110A (en) * 2022-11-11 2023-12-12 剑芯光电(苏州)有限公司 Silicon-based liquid crystal spatial light modulator and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117215110A (en) * 2022-11-11 2023-12-12 剑芯光电(苏州)有限公司 Silicon-based liquid crystal spatial light modulator and preparation method thereof

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