CN112144111A - Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process - Google Patents

Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process Download PDF

Info

Publication number
CN112144111A
CN112144111A CN202011069054.5A CN202011069054A CN112144111A CN 112144111 A CN112144111 A CN 112144111A CN 202011069054 A CN202011069054 A CN 202011069054A CN 112144111 A CN112144111 A CN 112144111A
Authority
CN
China
Prior art keywords
srfeo
iron
regulating
electrocatalytic activity
phase change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011069054.5A
Other languages
Chinese (zh)
Inventor
黄传威
张逸豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN202011069054.5A priority Critical patent/CN112144111A/en
Publication of CN112144111A publication Critical patent/CN112144111A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002Controlling or regulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/745Iron
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00Catalysts, in general, characterised by their form or physical properties
    • B01J35/30Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/33Electric or magnetic properties
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/082Oxides of alkaline earth metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00Electrolytic production of inorganic compounds or non-metals
    • C25B1/01Products
    • C25B1/02Hydrogen or oxygen
    • C25B1/04Hydrogen or oxygen by electrolysis of water
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/36Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrochemistry (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Catalysts (AREA)

Abstract

The invention discloses a method for regulating and controlling electrocatalytic activity of an iron-based perovskite oxide film by a phase change process, and relates to the technical field of electrocatalytic materials. The invention utilizes the pulse laser deposition technology to accurately regulate and control the oxygen pressure in the deposition processSmall SrFeO with different phase structures3‑x(0<x is less than or equal to 0.5) single crystal film to realize SrFeO3‑x(0<x is less than or equal to 0.5) single crystal film is formed by SrFeO2.97(perovskite phase, PV) to SrFeO2.5Structural phase change of (perovskite phase, BM) to regulate SrFeO3‑x(0<x is less than or equal to 0.5) electrocatalytic activity of the single crystal film electrode to obtain the single crystal film with high electrocatalytic activity.

Description

Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process
Technical Field
The invention relates to the technical field of electrocatalytic materials, in particular to a method for regulating electrocatalytic activity of an iron-based perovskite oxide film by using a phase change process.
Background
With the gradual consumption and reduction of fossil fuels, the development of new energy capable of being continuously utilized is a major challenge in modern society, hydrogen energy is taken as clean and environment-friendly novel energy with great prospect and is being put into use in large quantity, and the hydrogen production by electrolyzing water is considered to be the most scientific and efficient method at present. In order to improve the reaction kinetics, a high-efficiency active catalyst must be added in the water electrolysis process. Synthetic materials such as noble metals have been developed as electrocatalysts (e.g., IrO)2,RuO2Pt, Au, etc.), but their large-scale commercial application is limited due to their excessive cost and low content. Therefore, the development of a novel electrocatalyst with low cost and high efficiency is of great significance.
In recent years, many transition metal oxides begin to gradually replace noble metals to become research hotspots of novel electrocatalysts, perovskite oxides show great potential in the field of electrocatalysts due to low cost, high activity, simple preparation method and strong reaction kinetics, and most representative novel catalysts belong to Fe, Co and Ni type perovskite oxide catalysts. At present, the regulation and control of the electrocatalytic activity of the perovskite Strontium Ferrite (SFO) mainly focus on the aspects of powder-based element composition, morphological characteristics, particle size, oxygen vacancy and the like. In particular, oxygen vacancies play an important role in the whole process of electrocatalytic reaction, but the regulation of electrocatalytic activity based on oxygen channels under the microstructure is rarely reported.
Disclosure of Invention
The technical problem to be solved by the invention is some defects mentioned in the background technology, and the electrocatalytic activity is regulated and controlled through a fine microscopic oxygen channel so as to provide a method for regulating the electrocatalytic activity of an iron-based perovskite oxide film in a phase-change process.
In order to solve the above problems, the present invention proposes the following technical solutions:
the invention provides a phase-change engineering controlled electrocatalytic activity of an iron-based perovskite oxide filmThe method comprises bombarding a target material on a substrate layer by using pulse laser, and adjusting the dynamic oxygen partial pressure to 1.0-30.0 Pa in the deposition process to obtain SrFeO with different phase structures3-x(0<x is less than or equal to 0.5), and the target is SrFeO2.97
The different phase structure refers to SrFeO2.97(perovskite phase, PV) to SrFeO2.5Structural phase change of (perovskite phase, BM) to realize SrFeO3-x(0<x is less than or equal to 0.5) the regulation and control of the electrocatalytic activity of the film.
The further technical proposal is that the vacuum degree of the back bottom in the cavity of the pulse laser deposition system is less than 2 multiplied by 10-5Pa, and the deposition temperature is 600-800 ℃.
The further technical proposal is that the laser light source is KrF excimer laser, the laser wavelength is 248nm, the pulse width is 10ns, and the laser energy density is 1.0J/cm2~4.0J/cm2The frequency is 1 Hz-10 Hz.
The further technical proposal is that SrFeO is obtained when the dynamic oxygen partial pressure is 5.0Pa in the deposition process2.5A single crystal thin film.
Namely, SrFeO when the critical dynamic oxygen partial pressure in the deposition process is 5Pa3-x(0<x is less than or equal to 0.5) the structural phase change from PV to BM of the single crystal film to obtain SrFeO2.5A single crystal thin film.
The further technical proposal is that the SrFeO2.5The single crystal film is of a brownmillerite phase structure.
The further technical proposal is that the SrFeO3-x(0<x is less than or equal to 0.5) the thickness of the single crystal film is 10-40 nm.
The further technical scheme is that the substrate layer comprises a single crystal substrate and La0.7Sr0.3MnO3A conductive network.
The specific scheme of the substrate layer is that SrTiO3(001) Depositing La on single crystal substrate by pulsed laser deposition0.7Sr0.3MnO3The bottom electrode acts as a conductive network.
The further technical proposal is that the La is0.7Sr0.3MnO3Thickness of the conductive networkIs 10-15 nm.
The invention provides a method for regulating and controlling the electrocatalytic activity of an iron-based perovskite oxide film by phase change engineering, which is used for preparing SrFeO with different phase structures3-x(0<x is less than or equal to 0.5) application of the single crystal film.
The invention also provides SrFeO with different phase structures3-x(0<x is less than or equal to 0.5), and is prepared by the method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide film by the phase change engineering.
The principle of the invention is as follows: by using the pulse laser deposition technology and accurately regulating and controlling the oxygen partial pressure in the deposition process, the method can be used for preparing SrTiO3(001) SrFeO with different phase structures deposited on a single crystal substrate3-x(0<x is less than or equal to 0.5) single crystal film. The fine regulation and control of an oxygen channel under a microstructure are utilized to realize SrFeO2.97(PV) to SrFeO2.5(BM) structural transition. Experiments prove that SrFeO has oxygen precipitation activity2.5(BM) having an oxygen channel more favorable for the oxygen evolution reaction; compared with SrFeO2.97(PV),SrFeO2.5The oxygen evolution activity of (BM) is significantly improved.
Compared with the prior art, the invention can achieve the following technical effects:
(1) the invention utilizes the pulse laser deposition technology to accurately regulate and control the oxygen pressure in the deposition process to obtain SrFeO with different phase structures3-x(0<x is less than or equal to 0.5) single crystal film, thereby regulating and controlling SrFeO3-x(0<x is less than or equal to 0.5) electrocatalytic activity of the single crystal film electrode to obtain the single crystal film with high electrocatalytic activity.
(2) The Pulsed Laser Deposition (PLD) used in the invention realizes SrFeO3-x(0<x is less than or equal to 0.5) the regulation and control of the electrocatalytic activity of the thin film structure phase change engineering can be used for the performance regulation and modification of almost all oxide materials.
Drawings
FIG. 1 shows SrFeO obtained in examples 1 to 3 of the present invention3-x(0<x is less than or equal to 0.5) XRD pattern of the single crystal film.
FIG. 2 shows SrFeO obtained in examples 1 to 3 of the present invention3-x(0<x is less than or equal to 0.5) preparing the single crystal film into a linear voltammogram of the single crystal film electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments. It is apparent that the embodiments to be described below are only a part of the embodiments of the present invention, and not all of them. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
To explore SrFeO with different phase structures3-x(0<x is less than or equal to 0.5), and the method for regulating the electrocatalytic activity of the iron-based perovskite oxide film by applying the phase change engineering provided by the invention to prepare SrFeO with different phase structures3-x(0<x is less than or equal to 0.5), and SrFeO3-x(0<x is less than or equal to 0.5) preparing a single crystal film electrode to carry out an electrocatalytic activity test, wherein the specific preparation method of the single crystal film electrode is as follows:
(1) in SrTiO3(001) Depositing La with the thickness of 10-15nm on a single crystal substrate by a pulse laser deposition technology0.7Sr0.3MnO3The bottom electrode is used as a conductive network;
(2) adjusting the dynamic oxygen partial pressure in the deposition process on the conductive network obtained in the step (1) by a pulse laser deposition technology to obtain SrFeO with different structures3-x(0<x is less than or equal to 0.5) film, SrFeO3-x(0<x is less than or equal to 0.5) the thickness of the film is 10-40 nm;
the parameters of the pulsed laser deposition technology (PLD) in the step (2) are as follows: the dynamic oxygen partial pressure is 1.0-30.0 Pa, the substrate temperature is 600-800 ℃, the laser light source is KrF excimer laser, the laser wavelength is 248nm, the laser pulse width is 10ns, and the laser energy density is 1.0J/cm2~4.0J/cm2The laser frequency is 1 Hz-10 Hz.
(3) SrFeO obtained in the step (2)3-x(0<x is less than or equal to 0.5) connecting the silver wires with the film and coating the silver wires with epoxy resinCoating SrFeO3-x(0<x is less than or equal to 0.5) all parts except the film to obtain the single crystal film electrode;
(4) performing 1.2-1.8V linear voltammetry test on the single crystal thin film electrode obtained in the step (3) in 1moL/L KOH electrolyte to obtain SrFeO with different phase structures3-x(0<x is less than or equal to 0.5), and carrying out research test on the oxygen precipitation performance of the film electrode.
The specific embodiment is as follows:
example 1
In the embodiment, the single crystal thin film electrode is prepared by a method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide through phase change engineering, and the method comprises the following specific steps:
(1) in SrTiO3(001) Deposition of 10nm La by pulsed laser sputtering on single crystal substrates0.7Sr0.3MnO3A bottom electrode; the parameters of PLD are: the substrate temperature is 720 ℃, the dynamic oxygen partial pressure is 30Pa, the laser energy is 200mJ, the laser frequency is 3Hz, and the deposition time is 5 min;
(2) with SrFeO2.97Continuing to obtain SrFeO with different ferrite coordination numbers on the bottom electrode obtained in the step (1) by using a Pulsed Laser Deposition (PLD) technology for the target3-x(0<x is less than or equal to 0.5) thin film; the parameters of PLD are that the dynamic oxygen partial pressure is 20Pa, the substrate temperature is 700 ℃, the laser energy is 200mJ, the laser frequency is 3Hz, the deposition time is 15min, and the obtained SrFeO3-xThe film structure is SrFeO2.97The thickness of the film is 20 nm; lattice constant of the resulting thin film structure
Figure BDA0002712772790000041
(3) SrFeO obtained in the step (2)2.97The film part is connected with a silver wire, and then the SrFeO is coated by epoxy resin2.97And obtaining a single crystal thin film electrode at the part except the thin film.
Example 2
In the embodiment, the single crystal thin film electrode is prepared by a method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide through phase change engineering, and the method comprises the following specific steps:
(1) in SrTiO3(001) Deposition of 10nm on a single crystal substrate by pulsed laser sputteringLa0.7Sr0.3MnO3A bottom electrode; the parameters of PLD are: the substrate temperature is 720 ℃, the dynamic oxygen partial pressure is 30Pa, the laser energy is 200mJ, the laser frequency is 3Hz, and the deposition time is 5 min;
(2) continuously obtaining SrFeO with different ferrite coordination numbers on the conductive network obtained in the step (1) by a Pulse Laser Deposition (PLD) technology3-x(0<x is less than or equal to 0.5) single crystal film; the parameters of PLD are that the dynamic oxygen partial pressure is 10Pa, the substrate temperature is 700 ℃, the laser energy is 200mJ, the laser frequency is 3Hz, the deposition time is 12min, and the obtained SrFeO3-xThe film structure is SrFeO2.89(ii) a The thickness of the film is 20 nm; lattice constant of the resulting thin film structure
Figure BDA0002712772790000051
(3) SrFeO obtained in the step (2)2.89The film part is connected with a silver wire, and then the SrFeO is coated by epoxy resin3-x(0<x is less than or equal to 0.5) outside the thin film, and obtaining the single crystal thin film electrode.
Example 3
In the embodiment, the single crystal thin film electrode is prepared by a method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide through phase change engineering, and the method comprises the following specific steps:
(1) in SrTiO3(001) Deposition of 10nm La by pulsed laser sputtering on single crystal substrates0.7Sr0.3MnO3A conductive network; the parameters of PLD are: the substrate temperature is 720 ℃, the dynamic oxygen partial pressure is 30Pa, the laser energy is 200mJ, the laser frequency is 3Hz, and the deposition time is 5 min;
(2) with SrFeO2.97Continuously obtaining SrFeO with different ferrite coordination numbers on the conductive network obtained in the step (1) by the target through a Pulse Laser Deposition (PLD) technology3-x(0<x is less than or equal to 0.5) single crystal film; the parameters of PLD are that the dynamic oxygen partial pressure is 5Pa, the substrate temperature is 700 ℃, the laser energy is 200mJ, the laser frequency is 3Hz, the deposition time is 10min, and the obtained SrFeO3-xThe film structure is SrFeO2.5The thickness of the film is 20 nm; lattice constant of the resulting thin film structure
Figure BDA0002712772790000052
(3) SrFeO obtained in the step (2)2.5The film part is connected with a silver wire, and then the SrFeO is coated by epoxy resin2.5And obtaining the single crystal thin film electrode except the thin film.
XRD verification of the single crystal thin film electrodes obtained in examples 1 to 3 was carried out, and the results are shown in FIG. 1.
The result shows that the SrFeO can be obtained by accurately regulating the oxygen partial pressure by using the Pulsed Laser Deposition (PLD) technology2.97Single crystal thin film (PV) to SrFeO2.5Structural phase change of the single crystal thin film (BM). SrFeO with decreasing oxygen pressure for deposition3-x(0<x is less than or equal to 0.5) film lattice constant cfilmGradually increased, when the oxygen pressure is reduced to 5Pa, SrFeO3-x(0<x is less than or equal to 0.5) film is converted from PV phase to BM phase, and lattice constant cfilmIncrease to
Figure BDA0002712772790000053
The single crystal thin film electrodes obtained in the above examples 1 to 3 were subjected to a catalytic performance test by the following method:
(1) preparing 1moL/L electrolyte from analytically pure KOH and high-purity water, and introducing high-purity oxygen until the electrolyte is saturated;
(2) and (2) putting the single crystal thin film electrode obtained in the above example 1-3 into the KOH electrolyte prepared in the step (1), and performing a linear voltammetry test in a voltage range of 1.2-1.8V.
The linear voltammogram of the resulting single crystal thin film electrode is shown in FIG. 2.
The results show that SrFeO having a different phase structure3-x(0<x is less than or equal to 0.5) the single crystal film electrodes show different oxygen precipitation activities. In example 3, the oxygen evolution activity potential was lower than that of examples 1 and 2. And at the same potential, the current density is higher in example 3 than in examples 1 and 2, the oxygen yield efficiency is higher, namely when x is 0.5, SrFeO of example 32.5Electrocatalytic activity of (BM) compared to SrFeO of example 1, example 23-xThe electrocatalytic activity of the (PV) is obviously improved. It can be seen that the present invention provides a phaseThe method for regulating and controlling electrocatalytic activity of Fe-based perovskite oxide film by variable engineering realizes SrFeO by using Pulse Laser Deposition (PLD) technology3-x(0<x is less than or equal to 0.5) the electrocatalytic activity of the single crystal film electrode is regulated and controlled.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
While the invention has been described with reference to specific embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A method for regulating and controlling electrocatalytic activity of an iron-based perovskite oxide film in a phase change process is characterized in that a target material is bombarded on a substrate layer by using pulse laser, the dynamic oxygen partial pressure in the deposition process is adjusted to be 1.0-30.0 Pa, and SrFeO with a different phase structure is obtained3-x(0<x is less than or equal to 0.5), and the target is SrFeO2.97
2. The method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide film through phase change engineering according to claim 1, wherein the vacuum degree of the back bottom in the cavity is less than 2 x 10-5Pa, and the deposition temperature is 600-800 ℃.
3. The method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide thin film in the phase change engineering as claimed in claim 1, wherein the laser light source is KrF excimer laser, the laser wavelength is 248nm, the laser pulse width is 10ns, and the laser energy density is 1.0J/cm2~4.0J/cm2The laser frequency is 1 Hz-10 Hz.
4. The phase change engineered iron-based perovskite oxide thin film of claim 1The method for electrocatalytic activity is characterized in that SrFeO is obtained when the dynamic oxygen partial pressure is 5.0Pa in the deposition process2.5A single crystal thin film.
5. The method for regulating electrocatalytic activity of an iron-based perovskite oxide thin film through phase change engineering according to claim 4, wherein the SrFeO2.5The single crystal film is of a brownmillerite phase structure.
6. The method for regulating electrocatalytic activity of an iron-based perovskite oxide thin film through phase change engineering according to claim 1, wherein the SrFeO3-x(0<x is less than or equal to 0.5) the thickness of the single crystal film is 10-40 nm.
7. The method for regulating electrocatalytic activity of an iron-based perovskite oxide thin film through phase change engineering according to claim 1, wherein the substrate layer comprises a single crystal substrate and La0.7Sr0.3MnO3A conductive network.
8. The method for regulating electrocatalytic activity of an iron-based perovskite oxide thin film through phase change engineering according to claim 7, wherein the La is used for regulating electrocatalytic activity of the iron-based perovskite oxide thin film0.7Sr0.3MnO3The thickness of the conductive network is 10-15 nm.
9. The method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide thin film in the phase change engineering according to any one of claims 1 to 8 for preparing SrFeO with different phase structures3-x(0<x is less than or equal to 0.5) application of the single crystal film.
10. SrFeO with different phase structures3-x(0<x is less than or equal to 0.5), which is characterized in that the film is prepared by the method for regulating and controlling the electrocatalytic activity of the iron-based perovskite oxide film by the phase change engineering according to any one of claims 1 to 8.
CN202011069054.5A 2020-09-30 2020-09-30 Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process Pending CN112144111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011069054.5A CN112144111A (en) 2020-09-30 2020-09-30 Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011069054.5A CN112144111A (en) 2020-09-30 2020-09-30 Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process

Publications (1)

Publication Number Publication Date
CN112144111A true CN112144111A (en) 2020-12-29

Family

ID=73952542

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011069054.5A Pending CN112144111A (en) 2020-09-30 2020-09-30 Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process

Country Status (1)

Country Link
CN (1) CN112144111A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1636292A (en) * 2000-08-18 2005-07-06 霍尼韦尔国际公司 Integrated sofc
US20130118912A1 (en) * 2009-08-27 2013-05-16 Sun Catalytix Corporation Compositions, Electrodes, Methods, and Systems for Water Electrolysis and Other Electrochemical Techniques
US20140072836A1 (en) * 2011-04-05 2014-03-13 Blacklight Power, Inc. H2o-based electrochemical hydrogen-catalyst power system
CN108950481A (en) * 2018-07-04 2018-12-07 华南理工大学 A kind of stress regulation and control catalyst film electrode and its preparation method and application

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1636292A (en) * 2000-08-18 2005-07-06 霍尼韦尔国际公司 Integrated sofc
US20130118912A1 (en) * 2009-08-27 2013-05-16 Sun Catalytix Corporation Compositions, Electrodes, Methods, and Systems for Water Electrolysis and Other Electrochemical Techniques
US20140072836A1 (en) * 2011-04-05 2014-03-13 Blacklight Power, Inc. H2o-based electrochemical hydrogen-catalyst power system
CN108950481A (en) * 2018-07-04 2018-12-07 华南理工大学 A kind of stress regulation and control catalyst film electrode and its preparation method and application

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HYOUNGJEEN JEEN ET AL.: "Topotactic Phase Transformation of the Brownmillerite SrCoO2.5 to the Perovskite SrCoO3–δ", 《ADVANCED MATERIALS》 *
LE WANG ET AL.: "Brownmillerite phase formation and evolution in epitaxial strontium ferrite heterostructures", 《APPLIED PHYSICS LETTERS》 *

Similar Documents

Publication Publication Date Title
Wang et al. Enhancing activity and durability of a-site-deficient (La0. 6Sr0. 4) 0.95 Co0. 2Fe0. 8O3− δ cathode by surface modification with PrO2− δ nanoparticles
CN107597148B (en) Electrocatalyst and preparation method thereof
CN111074292B (en) Electro-catalytic hydrogen production porous high-entropy alloy electrode material and preparation method thereof
JP5641499B2 (en) Photocatalytic photocatalytic electrode
CN109252187A (en) A kind of high-entropy alloy elctro-catalyst, preparation method and the application of water decomposition hydrogen manufacturing
Jin et al. Revealing the effects of oxygen defects on the electro-catalytic activity of nickel oxide
CN103872367A (en) Zirconia based electrolyte film of solid oxide fuel cell
Fujita et al. The Effect of Li x Ni 2-x O 2/Ni with Modification Method on Activity and Durability of Alkaline Water Electrolysis Anode
CN108950481B (en) Stress regulation catalyst thin film electrode and preparation method and application thereof
JP6270884B2 (en) Method for producing electrode for photohydrolysis reaction
KR20150103864A (en) method of preparing electrocatalyst for hydrogen production in alkaline water electrolysis, method for controlling a electrocatalyst composition by changing electrolysis condition and electrocatalyst for hydrogen production in alkaline water electrolysis thereby
CN110512232B (en) Self-supporting transition metal sulfide film electro-catalytic electrode and preparation method thereof
CN114163139B (en) Preparation method of composite nickel oxide film with two layers of different structures
Fujita et al. Electrocatalytic Activity and Durability of Li x Ni 2-x O 2/Ni Electrode Prepared by Oxidation with LiOH Melt for Alkaline Water Electrolysis
JP6545901B2 (en) Method of protecting a solid oxide cell
CN112144111A (en) Method for regulating electrocatalytic activity of iron-based perovskite oxide film through phase change process
Zhu et al. Enhanced electrocatalytic performance for oxygen evolution reaction via active interfaces of Co3O4 arrays@ FeO x/Carbon cloth heterostructure by plasma-enhanced atomic layer deposition
CN104934614A (en) Doped cerium oxide catalytic film with preferred orientation, preparation and applications thereof
CN110306199A (en) A kind of carbon dioxide electro-catalysis reduction film and the preparation method and application thereof
CN110373679A (en) A method of it preparing anion and regulates and controls polynary hydroxide
CN111254460A (en) Membrane electrode assembly and method for producing hydrogen by electrolysis
CN111250130B (en) Nitride catalyst and method of forming the same
JP2017217623A (en) Method for manufacturing photocatalytic material
CN102509785A (en) Process for synthesizing three-dimensional nanometer porous composite strips by combusting controllable solution
CN109126834B (en) FeSe-based amorphous thin film catalyst and preparation method and application thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20201229

RJ01 Rejection of invention patent application after publication