CN112134540A - 一种复合电极的体声波谐振器及其制备方法 - Google Patents

一种复合电极的体声波谐振器及其制备方法 Download PDF

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CN112134540A
CN112134540A CN202010977498.2A CN202010977498A CN112134540A CN 112134540 A CN112134540 A CN 112134540A CN 202010977498 A CN202010977498 A CN 202010977498A CN 112134540 A CN112134540 A CN 112134540A
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孙成亮
刘炎
蔡耀
邹杨
高超
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Wuhan Memsonics Technologies Co Ltd
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Wuhan University WHU
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Abstract

本发明涉及一种复合电极的体声波谐振器及其制备方法，包括带有空腔的衬底、复合下电极、压电层、上电极。其中，压电层在复合下电极和上电极之间。复合下电极含有第一下电极、种子层、温度补偿层和第二下电极。第一下电极和第二下电极通过刻蚀通孔后相连接；通孔贯穿温度补偿层和种子层。复合电极在一方面可以提高压电薄膜的质量，降低谐振器的温度频率系数；另一方面，消除了由于温度补偿层导致的寄生电容效应，提高了谐振器的耦合系数。

Description

一种复合电极的体声波谐振器及其制备方法
技术领域
本发明涉及体声波谐振器领域，特别是涉及一种薄膜体声波谐振器及其制备方法。
背景技术
5G时代的到来，体声波(BAW)滤波器被广泛用于移动射频领域。相比于声表面波(SAW)滤波器，BAW可以提供高Q值，陡峭的曲线，低插入损耗以及较高的隔离特性。
传统的薄膜体声波谐振器由顶电极，压电层，底电极组成三层复合结构，当在上下电极施加射频电压时，BAW谐振器会将电能转化为机械能。目前制备FBAR压电层的主流工艺是在电极薄膜上磁控溅射AlN压电薄膜，而由于AlN薄膜与电极之间存在较大的晶格失配和热失配，导致生长出的薄膜质量较差，进而影响谐振器的性能。另一方面，用于制作BAW谐振器的压电材料AlN、ZnO，电极材料Mo等，大部分为负温度系数材料。在外界工作温度变化的情况下，谐振器的工作频率会随着温度的变化而产生漂移。目前，SiO2常被用做谐振器的温度补偿，但是SiO2的加入会引发寄生电容效应，导致器件性能的降低。
发明内容
本发明的目的在于提供一种带有种子层和温度补偿层的薄膜体声波谐振器，能够提高压电薄膜的质量，降低谐振器的温度频率系数，同时还能消除由于种子层和温度补偿层导致的寄生电容效应，提高谐振器的耦合系数。
本发明解决上述技术问题所采用的方案是：
一种薄膜体声波谐振器，包括带有空腔的衬底以及位于所述衬底之上的复合下电极、压电层、上电极；
所述压电层位于复合下电极和上电极之间；
所述复合下电极包括依次层叠的第一下电极、种子层、温度补偿层和第二下电极；
所述第一下电极和第二下电极通过刻蚀通孔后电连接；
所述通孔贯穿所述温度补偿层和种子层。
优选地，所述压电层材料选自AlN、ZnO、ScAlN。
优选地，所述上电极和下电极材料选自Mo、Ru、Pt。
优选地，所述温度补偿层为正温度系数的材料。
优选地，所述种子层的厚度为20-150nm之间。
优选地，所述温度补偿层的厚度为50-1000nm之间。
本发明的另一目的是提供一种薄膜体声波谐振器的制备方法，包括如下步骤：
(1)提供一带有空腔的Si衬底，所述空腔的深度优选为1um；
(2)采用等离子增强型化学气相沉积法在所述衬底上生长2～4um的SiO2；
(3)化学机械抛光SiO2至Si衬底表面停止，形成牺牲层；
(4)依次在所述衬底表面生长第一下电极，种子层，温度补偿层；
(5)刻蚀通孔，通孔贯穿所述温度补偿层和种子层；
(6)在所述温度补偿层表面生长第二下电极，使第一下电极和第二下电极通过通孔电连接；
(7)在所述第二下电极表面生长压电薄膜；
(8)在所述压电薄膜上刻蚀通孔；
(9)在所述压电薄膜上沉底金属电极材料并刻蚀图形化，分别形成上电极和引出的下电极；
(10)刻蚀释放孔，释放孔贯穿压电层、第二下电极、温度补偿层、种子层和第一下电极；
(11)释放牺牲层，形成空腔。
优选地，所述压电层材料选自AlN、ZnO、ScAlN。
优选地，所述上电极和下电极材料选自Mo、Ru、Pt。
优选地，所述温度补偿层为正温度系数的材料。
优选地，所述种子层的厚度为20-150nm之间。
优选地，所述温度补偿层的厚度为50-1000nm之间。
本发明产生的有益效果是：通过在底电极中嵌入种子层和温度补偿层，形成复合电极，一方面种子层可以提高压电薄膜的质量，温度补偿层降低谐振器的温度频率系数；另一方面，通过通孔将第一下电极和第二下电极进行电连接，消除了由于温度补偿层导致的寄生电容效应，提高了谐振器的耦合系数。
附图说明
图1是传统的薄膜体声波谐振器；
图2是带有种子层的薄膜体声波谐振器；
图3是一种带有温度补偿层的薄膜体声波谐振器；
图4是本发明复合电极的薄膜体声波谐振器；
图5A是传统薄膜体声波谐振器串联谐振频率(fs)随温度变化的曲线；
图5B是传统薄膜体声波谐振器并联谐振频率(fp)随温度变化的曲线；
图5C是传统薄膜体声波谐振器有效耦合系数(K)随温度变化的曲线；
图6A是带有温度补偿层薄膜体声波谐振器(图3)串联谐振频率(fs)随温度变化的曲线；
图6B是带有温度补偿层薄膜体声波谐振器(图3)并联谐振频率(fp)随温度变化的曲线；
图6C是带有温度补偿层薄膜体声波谐振器(图3)有效耦合系数(K)随温度变化的曲线；
图7A是本申请实施例1所得复合电极的薄膜体声波谐振器串联谐振频率(fs)随温度变化的曲线；
图7B是本申请实施例1所得复合电极的薄膜体声波谐振器并联谐振频率(fp)随温度变化的曲线；
图7C是本申请实施例1所得复合电极的薄膜体声波谐振器有效耦合系数(K)随温度变化的曲线；
图8A是一带有空腔的Si衬底；
图8B是PECVD生长2-4um的SiO2；
图8C是CMP SiO2至Si衬底表面停止；
图8D是生长第一下电极、种子层、温度补偿层；
图8E是刻蚀通孔；
图8F是生长第二下电极；
图8G是生长压电薄膜；
图8H是在压电薄膜206上刻蚀通孔；
图8I是沉积金属电极材料；
图8J是图形化电极分别形成上电极和引出的复合下电极；
图8K是刻蚀释放孔；
图8L是释放牺牲层，形成空腔；
图9是带有复合电极谐振器的俯视图。
具体实施方式
为更好的理解本发明，下面的实施例是对本发明的进一步说明，但本发明的内容不仅仅局限于下面的实施例。
图1为传统FBAR的剖面图，包括衬底100、空腔101、下电极102、压电层103、上电极104。其中，空腔101、下电极102、压电层103和上电极104重合的区域称为谐振器的有效工作区域。根据现有FBAR压电层的制程技术，种子层的晶格常数与下电极材料的晶格常数能够很好的匹配，进而为压电层的生长提供了有利的条件，如图2所示，种子层105位于下电极102下面。根据现有温度补偿FBAR的关键技术，一种常见的结构如图3所示，其中温度补偿层106位于第一下电极102a和第二下电极102b之间，但是这种结构会在102a、106和102b之间形成一个寄生电容，从而使有效耦合系数(K值)减小。图5A～C分别显示了通过仿真得到的传统薄膜体声波谐振器串联谐振频率(fs)、并联谐振频率(fp)和耦合系数(K)随温度变化的趋势。其中谐振器温度系数在fs为-51.423ppm/℃，在fp为-49.308ppm/℃，K值约为7.5。图6A～C分别显示了通过仿真得到的带有0.05um二氧化硅温度补偿层的薄膜体声波谐振器串联谐振频率(fs)、并联谐振频率(fp)和耦合系数(K)随温度变化的趋势。其中谐振器温度系数在fs为-48.077ppm/℃，在fp为-44.734ppm/℃，K值约为6.3。
实施例1
图4为本申请一种复合电极的体声波谐振器剖面图，包括：硅衬底200、在衬底结构上形成的空腔201、在空腔结构上的复合下电极301、在复合下电极上的压电层206以及在压电层206上的上电极207。
其中，复合下电极301进一步包括，第一下电极202、种子层203、温度补偿层204和第二下电极205。
第一下电极202和第二下电极205通过贯穿所述温度补偿层204和种子层203的通孔电连接。
释放孔211贯穿压电层、第二下电极、温度补偿层、种子层和第一下电极。
压电层206为AlN、ZnO以及ScAlN等压电材料；
上电极207、第一下电极202和第二下电极205为Mo、Ru、Pt等金属材料；
温度补偿层204为SiO2、SiOF等正温度系数的材料；
种子层203的厚度为20-150nm之间。
图7A～C分别显示了通过仿真得到的带有0.05um二氧化硅复合电极的薄膜体声波谐振器串联谐振频率(fs)、并联谐振频率(fp)和耦合系数(K)随温度变化的趋势。其中谐振器温度系数在fs为-48.077ppm/℃，在fp为-46.694ppm/℃，K值约为6.8。尽管在fp处的温度系数降低了约2ppm/℃，但是耦合系数明显提升了0.5。
图8A～8L以图形的方式描述了本申请一种复合电极的体声波谐振器的制备方法，具体过程如下：
(1)提供一带有空腔的Si衬底200(8A)；
(2)PECVD生长2-4um的SiO2(8B)；
(3)CMP SiO2至Si衬底表面停止，形成牺牲层208(8C)；
(4)依次生长第一下电极202，种子层203，温度补偿层204(8D)；
(5)刻蚀通孔209，通孔209贯穿温度补偿层204和种子层203(8E)；
(6)生长第二下电极205，连通第一下电极202和第二下电极205(8F)；
(7)生长压电薄膜206(8G)；
(8)在压电薄膜206上刻蚀通孔210(8H)；
(9)沉积金属电极材料并刻蚀图形化，分别形成上电极207和下电极接点212，引出复合下电极(8I、8J)；
(10)刻蚀释放孔211，释放孔贯穿压电层206、第二下电极205、温度补偿层204、种子层203和第一下电极202(8K)；
(11)释放牺牲层208，形成空腔201(8L)。
以上所述是本发明的优选实施方式而已，当然不能以此来限定本发明之权利范围，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和变动，这些改进和变动也视为本发明的保护范围。

Claims (10)

1.一种薄膜体声波谐振器，其特征在于，包括带有空腔的衬底以及位于所述衬底之上的复合下电极、压电层、上电极；
所述压电层位于复合下电极和上电极之间；
所述复合下电极包括依次层叠的第一下电极、种子层、温度补偿层和第二下电极；
所述第一下电极和第二下电极通过刻蚀通孔后电连接；
所述通孔贯穿所述温度补偿层和种子层。
2.根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述压电层的材料选自AlN、ZnO、ScAlN。
3.根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述上电极和下电极材料选自Mo、Ru、Pt。
4.根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述温度补偿层为正温度系数的材料，厚度为50-1000nm之间。
5.根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述种子层的厚度为20-150nm之间。
6.一种薄膜体声波谐振器的制备方法，其特征在于，包括如下步骤：
(1)提供一带有空腔的Si衬底；
(2)采用等离子增强型化学气相沉积法在所述衬底上生长2～4um的SiO2；
(3)化学机械抛光SiO2至Si衬底表面停止，形成牺牲层；
(4)依次在所述Si衬底表面生长第一下电极，种子层，温度补偿层；
(5)刻蚀通孔，通孔贯穿所述温度补偿层和种子层；
(6)在所述温度补偿层表面生长第二下电极，使第一下电极和第二下电极通过通孔电连接；
(7)在所述第二下电极表面生长压电薄膜；
(8)在所述压电薄膜上刻蚀通孔；
(9)在所述压电薄膜上沉底金属电极材料并刻蚀图形化，分别形成上电极和引出的下电极；
(10)刻蚀释放孔，释放孔贯穿压电层、第二下电极、温度补偿层、种子层和第一下电极；
(11)释放牺牲层，形成空腔。
7.根据权利要求6所述的制备方法，其特征在于，所述压电层的材料选自AlN、ZnO、ScAlN。
8.根据权利要求6所述的制备方法，其特征在于，所述上电极和下电极材料选自Mo、Ru、Pt。
9.根据权利要求6所述的制备方法，其特征在于，所述温度补偿层为正温度系数的材料，厚度为50-1000nm之间。
10.根据权利要求6所述的制备方法，其特征在于，所述种子层的厚度为20-150nm之间。
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