CN112130160B - Ultra-wideband TOF sensor - Google Patents
Ultra-wideband TOF sensor Download PDFInfo
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- CN112130160B CN112130160B CN202011026287.7A CN202011026287A CN112130160B CN 112130160 B CN112130160 B CN 112130160B CN 202011026287 A CN202011026287 A CN 202011026287A CN 112130160 B CN112130160 B CN 112130160B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
The application relates to the technical field of sensors, and particularly discloses an ultra-wideband ToF sensor which comprises a processing unit, a driving unit, a transmitting unit, a cut-off unit and a germanium-silicon sensor, wherein the processing unit is connected with the driving unit; the processing unit is respectively connected with the driving unit and the germanium-silicon sensor in a signal way, and is used for sending a driving signal to the driving unit according to preset laser emission data; the driving unit is in signal connection with the emitting unit and is used for driving the emitting unit to emit laser after receiving the driving signal; the wavelength range of the laser emitted by the emitting unit is 850-1550nm; the cut-off unit is used for filtering the reflected laser; the germanium-silicon sensor is used for collecting the filtered laser and generating laser receiving data; the processing unit is used for calculating the distance of the measured target according to the laser emission data and the laser receiving data; the wavelength range of the laser collected by the germanium-silicon sensor is 850nm-1550nm. By adopting the technical scheme of the application, the damage to the vision can be avoided, and the quantum efficiency attenuation is lower.
Description
Technical Field
The application relates to the technical field of sensors, in particular to an ultra-wideband ToF sensor.
Background
Currently, the mainstream ToF sensors in 3D mostly operate with light having a wavelength less than 1 μm, for example 850nm or 940nm, which brings two technical difficulties: firstly, sunlight can cause obvious interference to the light of the short wavelength band, so that the outdoor 3D sensing performance is greatly reduced; second, since the human retina absorbs laser energy in this wavelength region, when the ToF sensor is misused or malfunctioning, irreparably damaged to human vision may occur.
In order to solve the above problems, the productivity field is not limited by the advance of long wavelength technology, but the photoelectric conversion efficiency of the existing materials in the long wavelength band is low, and it is difficult to advance the available spectrum to more than 1 μm. From the quantum efficiency (Quantum Efficiency, QE) index representing the photoelectric conversion rate, a typical 3D sensor based on silicon technology has a QE of about 30% at 940nm, whereas when the wavelength enters a 1 μm section, the QE is sharply reduced to approach 0%.
Thus, there is a need for a ToF sensor that has low quantum efficiency decay and avoids the damage to vision.
Disclosure of Invention
The application provides an ultra-wideband ToF sensor, which can avoid damage to vision and has lower quantum efficiency attenuation.
In order to solve the technical problems, the application provides the following technical scheme:
an ultra-wideband ToF sensor comprises a processing unit, a driving unit, a transmitting unit and a cut-off unit; also comprises a germanium-silicon sensor;
the processing unit is respectively connected with the driving unit and the germanium-silicon sensor in a signal way, and is used for sending a driving signal to the driving unit according to preset laser emission data;
the driving unit is in signal connection with the emitting unit and is used for driving the emitting unit to emit laser after receiving the driving signal; the wavelength range of the laser emitted by the emitting unit is 850-1550nm;
the cut-off unit is used for filtering the reflected laser;
the germanium-silicon sensor is used for collecting the filtered laser and generating laser receiving data;
the processing unit is also used for calculating the distance of the measured object according to the laser emission data and the laser receiving data;
the wavelength range of the laser collected by the germanium-silicon sensor is 850nm-1550nm.
The basic scheme principle and the beneficial effects are as follows:
in the scheme, germanium-silicon (GeSi) is adopted as a light absorption material and integrated on a chip to form the germanium-silicon sensor, which can break through the barriers existing in physics and engineering for a long time, the QE of the germanium-silicon sensor is obviously improved to 70% at 940nm, and the QE of the germanium-silicon sensor can be maintained to 50% at 1550nm. The working wavelength of the laser can be after 1050nm of far infrared, so that the harm of laser to human bodies can be reduced, and the risk of damage of retina caused by absorption of laser with short wavelength can be further reduced.
The transmitting and receiving frequency bands can be in 850-1550nm full frequency band, the interference of ambient light to the module can be reduced outdoors, especially the frequency band after 1250nm, the sunlight interference resistance can be improved, and consistent use experience can be achieved outdoors and indoors.
Further, the germanium-silicon sensor comprises a substrate, a germanium-silicon semiconductor layer is arranged on the substrate, and a plurality of transistors are arranged on the germanium-silicon semiconductor layer.
Further, the germanium-silicon sensor further comprises a micro-mirror fixed above the transistor.
Further, the transistors include an amplifier transistor, a column line transistor, and a reset transistor.
Further, the system also comprises a beam forming lens and a receiving lens; a beamformed lens for beaming the emitted laser light; the receiving lens is used for receiving laser reflected by the measured object.
By arranging the beam forming lens and the receiving lens, the beam wave and the laser reflected by the measured object can be conveniently collected.
Further, the driving unit adopts an LED driver.
Further, the frequency of the laser emitted by the emitting unit is greater than 300MHz.
Further, the cut-off unit adopts an infrared cut-off filter.
Further, the infrared cut filter is used for filtering laser light with the wavelength of 940 nm.
Further, the infrared cut-off filter is also used for filtering laser with the wavelength of 1310 nm.
Drawings
FIG. 1 is a logic block diagram of an ultra-wideband ToF sensor according to an embodiment;
fig. 2 is a partial cross-sectional view of a silicon germanium sensor in an ultra-wideband ToF sensor according to an embodiment.
Detailed Description
The following is a further detailed description of the embodiments:
the labels in the drawings of this specification include: a substrate 1, a germanium-silicon semiconductor layer 2, a micro-mirror 3, a column line transistor 4, an amplifier transistor 5, and a reset transistor 6.
Example 1
As shown in fig. 1, an ultra-wideband ToF sensor of the present embodiment includes a processing unit, a driving unit, a transmitting unit, a beam forming lens, a receiving lens, a cut-off unit, and a silicon germanium sensor.
The processing unit is respectively connected with the driving unit and the germanium-silicon sensor in a signal way, and is used for sending a driving signal to the driving unit according to preset laser emission data;
the driving unit is in signal connection with the emitting unit and is used for driving the emitting unit to emit laser after receiving the driving signal. In this embodiment, the driving unit adopts an LED driver; the wavelength range of the laser emitted by the emitting unit is 850-1550nm. The frequency of the laser emitted by the emitting unit is greater than 300MHz.
A beamformed lens for beaming the emitted laser light;
the receiving lens is used for receiving laser reflected by the measured object.
The cut-off unit is used for filtering the reflected laser, and in this embodiment, an infrared cut-off filter is used. The infrared cut filter is used to filter laser light at wavelength 940nm, and laser light at wavelength 1310 nm.
The germanium-silicon sensor is used for collecting the filtered laser and generating laser receiving data; the wavelength range of the laser collected by the germanium-silicon sensor is 850nm-1550nm.
As shown in fig. 2, the sige sensor includes a substrate 1 and a micro-mirror 3, the substrate 1 is provided with a sige semiconductor layer 2, and the sige semiconductor layer 2 is provided with a plurality of transistors, including an amplifier transistor 5, a column line transistor 4, a reset transistor 6, and the like in this embodiment; the micromirror 3 is fixed above the transistor.
The processing unit is used for calculating the distance of the measured object according to the laser emission data and the laser receiving data.
In this example, germanium-silicon (GeSi) was used as the light absorbing material and integrated on the chip, as shown in Table 1, the QE was significantly increased to 70% at 940nm and maintained at 50% at 1310 nm.
TABLE 1
The working wavelength of the laser can be after 1050nm of far infrared, so that the harm of laser to human bodies can be reduced, and the risk of damage of retina caused by absorption of laser with short wavelength can be further reduced.
The transmitting and receiving frequency bands can be in 850-1550nm full frequency band, the interference of ambient light to the module can be reduced outdoors, especially the frequency band after 1250nm, the sunlight interference resistance can be improved, and consistent use experience can be achieved outdoors and indoors.
Example two
The difference between the present embodiment and the first embodiment is that the processing unit is further configured to obtain an environmental image and an environmental sound, determine whether the current environment is outdoor or indoor based on the environmental image, and determine whether the ambient light is higher than or lower than the preset brightness according to the brightness of the picture when the current environment is outdoor; in this embodiment, the ambient light is strong above the preset brightness and weak below the preset brightness. In this embodiment, the ultra-wideband ToF sensor is applied to a mobile phone, an environmental image is obtained from an image sensor of the mobile phone, and an environmental sound is obtained from a microphone of the mobile phone.
The processing unit is also used for judging whether a person exists in the current environment or not based on the environment image, and if the person exists, the processing unit is also used for judging whether the person is in a state of facing the sensor or in a state of facing away from the sensor;
when the person is in a state facing away from the sensor, the processing unit is further used for analyzing the environmental sound, calculating the average decibel of the environmental sound, judging whether the current environmental sound exceeds a threshold value compared with the average decibel, and if so, modifying the state facing away from the sensor into a state facing the sensor;
the processing unit is also used for setting the wavelength range of the laser emitted by the emitting unit to 850-1309nm when the current environment is indoor and unmanned;
when the current environment is indoor and the person is in a state of facing the sensor, setting the wavelength range of the laser emitted by the emitting unit to 1310-1550nm;
when the current environment is indoor and the person is in a state of facing away from the sensor, setting the wavelength range of the laser emitted by the emitting unit to be 850-1309nm;
when the current environment is outdoor and the ambient light is higher than the preset brightness, setting the wavelength range of the laser emitted by the emitting unit to 1310-1550nm;
when the current environment is outdoor and the ambient light is lower than the preset brightness and is not available, setting the wavelength range of the laser emitted by the emitting unit to 850-1309nm;
when the current environment is outdoor, the ambient light is lower than the preset brightness and the person is in a state of facing the sensor, setting the wavelength range of the laser emitted by the emitting unit to 1310-1550nm;
when the current environment is outdoor, the ambient light is lower than the preset brightness and the person is in a state of facing away from the sensor, the wavelength range of the laser emitted by the emitting unit is set to 850-1309nm.
Although the wavelength range of the germanium-silicon sensor collecting laser is 850nm-1550nm, after exceeding 1000nm, the QE still has attenuation. In this embodiment, by determining whether the current environment is outdoor or indoor, whether a person faces the sensor, and whether the outdoor environment light is higher than the preset brightness, it can be determined whether the wavelength range of 850-1309nm can be preferentially adopted, and the wavelength of 1310-1550nm is reused under the condition that the laser may harm the human body or be interfered by sunlight. The light with the wavelength of 850-940 nm is not directly adopted, so that the light can be better adapted to suddenly changed light, and suddenly appeared people are protected.
When a person is in a state facing away from the sensor, the person will not suddenly turn around normally, but when there is sudden abnormal sound in the environment or a person shouts (the current environmental sound exceeds a threshold value compared with the average decibel), the person may turn around to cause the person to face the sensor due to instinct. In this embodiment, it is possible to detect this, and modify the state facing away from the sensor to the state facing the sensor; can avoid the harm of laser to human body when people suddenly turn around.
The foregoing is merely an embodiment of the present application, the present application is not limited to the field of this embodiment, and the specific structures and features well known in the schemes are not described in any way herein, so that those skilled in the art will know all the prior art in the field before the application date or priority date of the present application, and will have the capability of applying the conventional experimental means before the date, and those skilled in the art may, in light of the present application, complete and implement the present scheme in combination with their own capabilities, and some typical known structures or known methods should not be an obstacle for those skilled in the art to practice the present application. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the structure of the present application, and these should also be considered as the scope of the present application, which does not affect the effect of the implementation of the present application and the utility of the patent. The protection scope of the present application is subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (9)
1. An ultra-wideband ToF sensor comprises a processing unit, a driving unit, a transmitting unit and a cut-off unit;
the device is characterized by further comprising a germanium-silicon sensor;
the processing unit is respectively connected with the driving unit and the germanium-silicon sensor in a signal way, and is used for sending a driving signal to the driving unit according to preset laser emission data;
the driving unit is in signal connection with the emitting unit and is used for driving the emitting unit to emit laser after receiving the driving signal; the wavelength range of the laser emitted by the emitting unit is 850-1550nm;
the cut-off unit is used for filtering the reflected laser; the cut-off unit is used for filtering laser with the wavelength of 1310 nm;
the germanium-silicon sensor is used for collecting the filtered laser and generating laser receiving data;
the processing unit is also used for calculating the distance of the measured object according to the laser emission data and the laser receiving data;
the wavelength range of the laser collected by the germanium-silicon sensor is 850nm-1550nm; by judging whether the current environment is outdoor or indoor, whether a person faces the sensor or not, and whether the outdoor environment light is higher than preset brightness or not, comprehensively judging whether the wavelength range of 850-1309nm can be preferentially adopted or not; when the laser is harmful to human body or is interfered by sunlight, the wavelength of 1310-1550nm is used;
when the person is in a state of facing away from the sensor, whether the person turns around to face the sensor is detected by comparing the current environmental sound with the average decibel and judging whether the current environmental sound exceeds a threshold value, and if so, the state of facing away from the sensor is modified to be in a state of facing away from the sensor.
2. The ultra-wideband ToF sensor according to claim 1, wherein: the germanium-silicon sensor comprises a substrate, a germanium-silicon semiconductor layer is arranged on the substrate, and a plurality of transistors are arranged on the germanium-silicon semiconductor layer.
3. The ultra-wideband ToF sensor according to claim 2, wherein: the germanium-silicon sensor further comprises a micro-mirror, and the micro-mirror is fixed above the transistor.
4. An ultra-wideband ToF sensor according to claim 3 wherein: the transistors include an amplifier transistor, a column line transistor, and a reset transistor.
5. The ultra-wideband ToF sensor according to claim 4, wherein: the system also comprises a beam forming lens and a receiving lens; a beamformed lens for beaming the emitted laser light; the receiving lens is used for receiving laser reflected by the measured object.
6. The ultra-wideband ToF sensor according to claim 5, wherein: the driving unit adopts an LED driver.
7. The ultra-wideband ToF sensor of claim 6, wherein: the frequency of the laser emitted by the emitting unit is greater than 300MHz.
8. The ultra-wideband ToF sensor according to claim 7, wherein: the cut-off unit adopts an infrared cut-off filter.
9. The ultra-wideband ToF sensor according to claim 8, wherein: the infrared cut-off filter is used for filtering laser with the wavelength of 940 nm.
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| CN202011026287.7A CN112130160B (en) | 2020-09-25 | 2020-09-25 | Ultra-wideband TOF sensor |
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| CN202011026287.7A CN112130160B (en) | 2020-09-25 | 2020-09-25 | Ultra-wideband TOF sensor |
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| CN112130160B true CN112130160B (en) | 2023-08-25 |
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| CN103412312A (en) * | 2013-07-03 | 2013-11-27 | 王振兴 | Laser ranging method and device |
| CN104792278A (en) * | 2015-03-23 | 2015-07-22 | 覃泳睿 | Laser wavelength selection method for performing structured light method three-dimensional measurement in sunlight environment |
| CN111239760A (en) * | 2020-01-16 | 2020-06-05 | 湖北三江航天红峰控制有限公司 | Multi-view-field target environment information acquisition device and method based on fusion sensor |
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Address after: 400900 the 3 building of the 207 electronic workshop of the electronic information industrial park, Chongqing. Applicant after: Shengtai Photoelectric Technology Co.,Ltd. Address before: 400900 the 3 building of the 207 electronic workshop of the electronic information industrial park, Chongqing. Applicant before: Chongqing Sheng Tai optoelectronic Co.,Ltd. |
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