CN112126357A - Polishing solution for gallium nitride substrate material - Google Patents
Polishing solution for gallium nitride substrate material Download PDFInfo
- Publication number
- CN112126357A CN112126357A CN202011008767.0A CN202011008767A CN112126357A CN 112126357 A CN112126357 A CN 112126357A CN 202011008767 A CN202011008767 A CN 202011008767A CN 112126357 A CN112126357 A CN 112126357A
- Authority
- CN
- China
- Prior art keywords
- acid
- sodium
- polishing
- gallium nitride
- substrate material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 title claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 38
- 239000003054 catalyst Substances 0.000 claims abstract description 37
- 239000007800 oxidant agent Substances 0.000 claims abstract description 26
- 239000006185 dispersion Substances 0.000 claims abstract description 24
- 239000003381 stabilizer Substances 0.000 claims abstract description 24
- 239000003518 caustics Substances 0.000 claims abstract description 23
- 230000001590 oxidative effect Effects 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 230000004048 modification Effects 0.000 claims description 10
- 238000012986 modification Methods 0.000 claims description 10
- 238000001556 precipitation Methods 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- -1 tetraethyleneamine Chemical compound 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 4
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000000975 co-precipitation Methods 0.000 claims description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001630 malic acid Substances 0.000 claims description 4
- 235000011090 malic acid Nutrition 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 claims description 4
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 claims description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 4
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005995 Aluminium silicate Substances 0.000 claims description 3
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 235000012211 aluminium silicate Nutrition 0.000 claims description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 238000009830 intercalation Methods 0.000 claims description 3
- 230000002687 intercalation Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000593 microemulsion method Methods 0.000 claims description 3
- 229910052901 montmorillonite Inorganic materials 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- 238000000935 solvent evaporation Methods 0.000 claims description 3
- 238000004729 solvothermal method Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 239000010455 vermiculite Substances 0.000 claims description 3
- 229910052902 vermiculite Inorganic materials 0.000 claims description 3
- 235000019354 vermiculite Nutrition 0.000 claims description 3
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 claims description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- MXZROAOUCUVNHX-UHFFFAOYSA-N 2-Aminopropanol Chemical compound CCC(N)O MXZROAOUCUVNHX-UHFFFAOYSA-N 0.000 claims description 2
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 235000001014 amino acid Nutrition 0.000 claims description 2
- 150000001413 amino acids Chemical class 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- KBKZYWOOZPIUJT-UHFFFAOYSA-N azane;hypochlorous acid Chemical compound N.ClO KBKZYWOOZPIUJT-UHFFFAOYSA-N 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 2
- BHDAXLOEFWJKTL-UHFFFAOYSA-L dipotassium;carboxylatooxy carbonate Chemical compound [K+].[K+].[O-]C(=O)OOC([O-])=O BHDAXLOEFWJKTL-UHFFFAOYSA-L 0.000 claims description 2
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 claims description 2
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003301 hydrolyzing effect Effects 0.000 claims description 2
- CUILPNURFADTPE-UHFFFAOYSA-N hypobromous acid Chemical compound BrO CUILPNURFADTPE-UHFFFAOYSA-N 0.000 claims description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 238000003801 milling Methods 0.000 claims description 2
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 claims description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 claims description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 2
- 239000001230 potassium iodate Substances 0.000 claims description 2
- 235000006666 potassium iodate Nutrition 0.000 claims description 2
- 229940093930 potassium iodate Drugs 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- 229910001487 potassium perchlorate Inorganic materials 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- 239000011697 sodium iodate Substances 0.000 claims description 2
- 235000015281 sodium iodate Nutrition 0.000 claims description 2
- 229940032753 sodium iodate Drugs 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- 235000010288 sodium nitrite Nutrition 0.000 claims description 2
- 229940045872 sodium percarbonate Drugs 0.000 claims description 2
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 claims description 2
- 229910001488 sodium perchlorate Inorganic materials 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- CRWJEUDFKNYSBX-UHFFFAOYSA-N sodium;hypobromite Chemical compound [Na+].Br[O-] CRWJEUDFKNYSBX-UHFFFAOYSA-N 0.000 claims description 2
- SAFWHKYSCUAGHQ-UHFFFAOYSA-N sodium;hypoiodite Chemical compound [Na+].I[O-] SAFWHKYSCUAGHQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 claims 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims 2
- 239000002002 slurry Substances 0.000 claims 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 239000005909 Kieselgur Substances 0.000 claims 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims 1
- 235000019395 ammonium persulphate Nutrition 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 229940051250 hexylene glycol Drugs 0.000 claims 1
- SRPSOCQMBCNWFR-UHFFFAOYSA-N iodous acid Chemical compound OI=O SRPSOCQMBCNWFR-UHFFFAOYSA-N 0.000 claims 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000002715 modification method Methods 0.000 abstract description 2
- 238000001308 synthesis method Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The embodiment of the invention discloses polishing solution for a gallium nitride substrate material, which comprises polishing particles, a corrosive, an oxidant, an ordered catalyst, a dispersion stabilizer and water, wherein the polishing particles comprise the following components in percentage by weight: 10-50 wt% of polishing particles; 0.1-20 wt% of a corrosive agent; 0.01-10 wt% of an oxidant; 0.0001-10 wt% of ordered catalyst; 0.01-10 wt% of a dispersion stabilizer; the balance of water. The ordered catalyst is added into the polishing solution, is prepared by a synthesis and modification method, has a special structure, electronic arrangement and surface groups on the surface, and can be orderly adsorbed on the surface of gallium nitride during polishing, so that the removal rate of the polishing solution is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor material polishing, in particular to polishing solution for a gallium nitride substrate material.
Background
Gallium nitride (GaN) has potential application prospects in the aspects of photoelectric devices such as blue and ultraviolet light emitting diodes, laser diodes and the like. Currently, most commercial GaN-based devices are prepared by growing epitaxial thin films on substrates such as sapphire and silicon carbide. However, the higher dislocation density in the heteroepitaxial layer is due to the larger lattice and thermal mismatch between the GaN epitaxial layer and the substrate. Therefore, there is an urgent need to produce atomically smooth, damage-free GaN surfaces. Since GaN has very high hardness and strong chemical resistance and is difficult to process, its chemical mechanical polishing efficiency cannot meet the increasing industrial demand.
In the early stage of research, alumina particles with high hardness were used for polishing to improve the efficiency, but the removal rate was as close as 50nm/h, and the surface quality was also poor (Journal of electrochemical Society 155(2008): 113-. The research team carries out a series of researches (Tribology International 110(2017)441- & 450, Applied Surface Science 338(2015):85-91) on the ultra-fine Surface polishing of gallium nitride, and in order to improve the polishing efficiency, the research team proposes to adopt a catalyst to assist in polishing the gallium nitride (patent: 201510156564.9), but the catalytic performance of the catalyst cannot reach the best due to the agglomeration of the catalyst and the ineffective adsorption of the catalyst on the Surface of the gallium nitride.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a polishing solution for a gallium nitride substrate material, which can be orderly and stably adsorbed on gallium nitride, and can exert the catalytic performance of a catalyst to the maximum extent, and has high polishing efficiency.
In order to solve the technical problem, an embodiment of the present invention provides a polishing solution for a gallium nitride substrate material, including polishing particles, a corrosive agent, an oxidant, an ordered catalyst, a dispersion stabilizer and water, wherein the polishing solution comprises the following components by weight:
10 to 50wt% of polishing particles
0.1-20 wt% of corrosive agent
0.01 to 10wt% of an oxidizing agent
0.0001-10 wt% of ordered catalyst
0.01 to 10wt% of a dispersion stabilizer
The balance of water.
Further, the polishing particles are one or more of silicon oxide, cerium oxide, diamond, silicon carbide, boron nitride, zirconium oxide and iron oxide, and the particle size distribution range is 0.01-20 microns.
Further, the corrosive agent comprises an acidic corrosive agent and a basic corrosive agent.
Further, the acid corrosive agent comprises one or more of hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, boric acid, sulfuric acid, phosphoric acid, acid potassium carbonate, sodium salt, citric acid, salicylic acid, glycolic acid, oxalic acid, malic acid, lactic acid and amino acid.
Further, the alkaline etchant includes one or more of potassium hydroxide, sodium hydroxide, ammonia, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, isopropanolamine, aminopropanol, tetraethyleneamine, ethylenediamine, ethanolamine, diethanolamine, triethanolamine, hydroxylamine, diethyltriamine, triethylenetetramine, hydroxyethylethylenediamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine.
Further, the oxidizing agent includes one or more of hypochlorous acid, sodium hypochlorite, potassium hypochlorite, ammonium hypochlorite, perchloric acid, sodium perchlorate, potassium perchlorate, hypobromous acid, sodium hypobromite, perbromic acid, sodium hypoiodite, iodic acid, sodium iodate, potassium iodate, periodic acid, sodium periodate, potassium periodate, hydrogen peroxide, sodium peroxide, potassium peroxide, sodium nitrate, sodium nitrite, potassium nitrate, aluminum nitrate, iron nitrate, sodium percarbonate, potassium percarbonate, sodium persulfate, peroxodisulfuric acid, sodium peroxodisulfate, ammonium peroxodisulfate, peracetic acid or perbenzoic acid, urea peroxide.
Further, the stabilizing dispersant is hydroxyl alcohol, and comprises one or more of ethylene glycol, propylene glycol, butanediol, hexanediol, diethylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, polypropylene glycol, polyvinyl alcohol and glycerol.
Furthermore, the ordered catalyst is a compound with one or more of the characteristics of large specific surface area, high surface energy, porosity, multiple catalytic centers, regular active site distribution, stable structure, good dispersibility and multiple functional groups.
Further, the ordered catalyst is prepared by one or more of simple metal substances, oxides, salts, carbon, diatomite, graphite, graphene, montmorillonite, vermiculite and kaolin through synthesis treatment and modification treatment.
Further, the synthesis treatment comprises one or more of a solid phase grinding method, a thermal evaporation method, an ion sputtering method, a vacuum evaporation method, a plasma evaporation method, electron beam evaporation, a chemical vapor deposition method, a coprecipitation method, a hydrolysis precipitation method, a hydrothermal and solvothermal method, a microemulsion method, a solvent evaporation method and a template method; the modification treatment comprises one or more of surface organic coating, precipitation reaction coating, mechanochemistry, intercalation modification, organic physics/chemical coating, mechanochemistry/organic coating and inorganic precipitation reaction/organic coating.
The invention has the beneficial effects that: the ordered catalyst is added into the polishing solution, is prepared by a synthesis and modification method, has a special structure, electronic arrangement and surface groups on the surface, and can be orderly adsorbed on the surface of gallium nitride during polishing, so that the removal rate of the polishing solution is improved.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict, and the present invention is further described in detail with reference to the accompanying tables and specific examples.
If directional indications (such as up, down, left, right, front, and rear … …) are provided in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture, and if the specific posture is changed, the directional indications are changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only used for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.
The polishing solution for the gallium nitride substrate material of the embodiment of the invention comprises polishing particles, a corrosive, an oxidant, an ordered catalyst, a dispersion stabilizer and water.
As an implementation mode, the ordered catalyst is a compound which has one or more of the characteristics of large specific surface area, high surface energy, porosity, multiple catalytic centers, regular active site distribution, stable structure, good dispersibility and multiple functional groups.
As an embodiment, the ordered catalyst is prepared by one or more of simple metal, oxide, salt, carbon, diatomite, graphite, graphene, montmorillonite, vermiculite and kaolin through synthesis treatment and modification treatment. The elementary metal is one or more of iron, nickel, titanium, aluminum, cobalt, molybdenum, copper, gold, silver, palladium, platinum, tungsten, tantalum, ruthenium, tin, vanadium and manganese, and the elementary substance can also be used as a reactant to generate a new ordered catalyst after modification or synthesis.
As an embodiment, the synthesis treatment includes treatment using one or more of a solid phase milling method, a thermal evaporation method, an ion sputtering method, a vacuum evaporation method, a plasma evaporation method, electron beam evaporation, a chemical vapor deposition method, a coprecipitation method, a hydrolytic precipitation method, a hydrothermal and solvothermal method, a microemulsion method, a solvent evaporation method, a template method; the modification treatment comprises one or more of surface organic coating, precipitation reaction coating, mechanochemistry, intercalation modification, organic physics/chemical coating, mechanochemistry/organic coating and inorganic precipitation reaction/organic coating.
The following examples after polishing, the gallium nitride surface was washed and dried with a cleaning agent and deionized water, and then the removal rate and surface quality of the thick film were measured. The removal rate of polishing (MRR) was calculated from the change in wafer weight before and after overpolishing measured with a precision electronic balance with a precision of 0.01mg, and the removal rate was calculated as the ratio of the removal thickness to the polishing time after conversion of the removal weight. The removal rate was determined by measuring the difference in thickness between the wafer before and after polishing with a thickness gauge, surface defects (scratches, pits) were observed with an optical microscope, the surface roughness Ra was measured with an atomic force microscope, the probe radius was 10nm, the vertical resolution was 0.01nm, the scanning frequency was 1.5Hz, and the scanning range was 1X 1 μm2. The polishing performance of each example and comparative document 1 is shown in table 1.
Example one
Under the condition of continuous stirring, polishing particles, a corrosive agent, an oxidant, an ordered catalyst and a dispersion stabilizer are sequentially added into deionized water and continuously stirred until the polishing particles, the corrosive agent, the oxidant, the ordered catalyst and the dispersion stabilizer are completely dissolved. The polishing solution comprises the following components in percentage by weight: 30 wt% of polishing particles (0.1 micron silicon oxide particles), 5 wt% of corrosive (sodium hydroxide), 10wt% of oxidant (hydrogen peroxide), 5 wt% of iron-based ordered catalyst (prepared by a precipitation method) and 0.1 wt% of dispersion stabilizer (glycerol). After polishing, the gallium nitride is cleaned and dried. The removal rate was determined by measuring the difference in thickness between the wafers before and after polishing with a thickness gauge, and surface defects (scratches, pits) were observed with an optical microscope, and the surface roughness Ra was measured with an atomic force microscope, and the results are shown in table 1.
Example two
Under the condition of continuous stirring, polishing particles, a corrosive agent, an oxidant, an ordered catalyst and a dispersion stabilizer are sequentially added into deionized water and continuously stirred until the polishing particles, the corrosive agent, the oxidant, the ordered catalyst and the dispersion stabilizer are completely dissolved. The polishing solution comprises the following components in percentage by weight: 50wt% of polishing particles (0.01 micron cerium oxide particles), 20wt% of corrosive (ammonia water), 5 wt% of oxidant (sodium hypochlorite), 0.0001 wt% of nickel-based ordered catalyst (prepared by coprecipitation method), and 5 wt% of dispersion stabilizer (hexanediol). After polishing, the gallium nitride is cleaned and dried. The removal rate was determined by measuring the difference in thickness between the wafers before and after polishing with a thickness gauge, and surface defects (scratches, pits) were observed with an optical microscope, and the surface roughness Ra was measured with an atomic force microscope, and the results are shown in table 1.
EXAMPLE III
Under the condition of continuous stirring, polishing particles, a corrosive agent, an oxidant, an ordered catalyst and a dispersion stabilizer are sequentially added into deionized water and continuously stirred until the polishing particles, the corrosive agent, the oxidant, the ordered catalyst and the dispersion stabilizer are completely dissolved. The polishing solution comprises the following components in percentage by weight: 20wt% of polishing particles (1 micron silicon carbide particles), 10wt% of corrosive agent (oxalic acid), 1 wt% of oxidizing agent (sodium persulfate), 0.01 wt% of cobalt-based ordered catalyst (prepared by a template method) and 5 wt% of dispersion stabilizer (ethanol). After polishing, the gallium nitride is cleaned and dried. The removal rate was determined by measuring the difference in thickness between the wafers before and after polishing with a thickness gauge, and surface defects (scratches, pits) were observed with an optical microscope, and the surface roughness Ra was measured with an atomic force microscope, and the results are shown in table 1.
Example four
Under the condition of continuous stirring, polishing particles, a corrosive agent, an oxidant, an ordered catalyst and a dispersion stabilizer are sequentially added into deionized water and continuously stirred until the polishing particles, the corrosive agent, the oxidant, the ordered catalyst and the dispersion stabilizer are completely dissolved. The polishing solution comprises the following components in percentage by weight: 1 wt% of polishing particles (20 micron aluminum oxide particles), 1 wt% of corrosive (hydrochloric acid), 5 wt% of oxidizing agent (potassium permanganate), 0.001 wt% of tantalum-based ordered catalyst (prepared by a template method) and 10wt% of dispersion stabilizer (ethylene glycol). After polishing, the gallium nitride is cleaned and dried. The removal rate was determined by measuring the difference in thickness between the wafers before and after polishing with a thickness gauge, and surface defects (scratches, pits) were observed with an optical microscope, and the surface roughness Ra was measured with an atomic force microscope, and the results are shown in table 1.
EXAMPLE five
Under the condition of continuous stirring, polishing particles, a corrosive agent, an oxidant, an ordered catalyst and a dispersion stabilizer are sequentially added into deionized water and continuously stirred until the polishing particles, the corrosive agent, the oxidant, the ordered catalyst and the dispersion stabilizer are completely dissolved. The polishing solution comprises the following components in percentage by weight: 0.1 wt% of polishing particles (10-micron iron oxide particles), 5 wt% of corrosive agent (malic acid), 0.01 wt% of oxidizing agent (perchloric acid), 10wt% of carbon-based ordered catalyst (prepared by organic coating method), and 10wt% of dispersion stabilizer (ethanol). After polishing, the gallium nitride is cleaned and dried. The removal rate was determined by measuring the difference in thickness between the wafers before and after polishing with a thickness gauge, and surface defects (scratches, pits) were observed with an optical microscope, and the surface roughness Ra was measured with an atomic force microscope, and the results are shown in table 1.
Reference 1 uses the application No.: 201510156564.9 patent publication:
under the condition of continuous stirring, polishing particles, a corrosive agent, an oxidant and a dispersion stabilizer are sequentially added into deionized water and are continuously stirred until the particles are completely dissolved. The polishing solution comprises the following components in percentage by weight: 0.1 wt% of polishing particles (10-micron iron oxide particles), 5 wt% of corrosive agent (malic acid), 0.01 wt% of oxidizing agent (perchloric acid), 10wt% of carbon-based ordered catalyst (prepared by organic coating method), and 10wt% of dispersion stabilizer (ethanol). After polishing, the gallium nitride is cleaned and dried. The removal rate was determined by measuring the difference in thickness between the wafers before and after polishing with a thickness gauge, and surface defects (scratches, pits) were observed with an optical microscope, and the surface roughness Ra was measured with an atomic force microscope, and the results are shown in table 1.
TABLE 1
Examples | Removal Rate (nm/h) | Surface roughness (Ra) | Condition of surface defect |
Example one | 80 | 0.01nm | No defect and no scratch |
Example two | 90 | 0.03nm | No defect and no scratch |
EXAMPLE III | 96 | 0.02nm | No defect and no scratch |
Example four | 100 | 0.27nm | No defect and no scratch |
EXAMPLE five | 120 | 0.01nm | No defect and no scratch |
Reference 1 | 53 | 0.15nm | No defect and no scratch |
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The polishing solution for the gallium nitride substrate material is characterized by comprising polishing particles, a corrosive agent, an oxidant, an ordered catalyst, a dispersion stabilizer and water, wherein the polishing particles comprise the following components in percentage by weight:
10 to 50wt% of polishing particles
0.1-20 wt% of corrosive agent
0.01 to 10wt% of an oxidizing agent
0.0001-10 wt% of ordered catalyst
0.01 to 10wt% of a dispersion stabilizer
The balance of water.
2. The polishing slurry for a gallium nitride substrate material according to claim 1, wherein the polishing particles are one or more of silicon oxide, cerium oxide, diamond, silicon carbide, boron nitride, zirconium oxide, and iron oxide, and have a particle size distribution in the range of 0.01 to 20 μm.
3. The polishing slurry for a gallium nitride substrate material according to claim 1, wherein the etchant comprises an acidic etchant and an alkaline etchant.
4. The polishing solution for a gallium nitride substrate material according to claim 3, wherein the acidic etchant includes one or more of hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, boric acid, sulfuric acid, phosphoric acid, acid potassium carbonate, sodium salt, citric acid, salicylic acid, glycolic acid, oxalic acid, malic acid, lactic acid, and amino acid.
5. The polishing solution for a gallium nitride substrate material according to claim 3, wherein the alkaline etchant comprises one or more of potassium hydroxide, sodium hydroxide, ammonia, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, isopropanolamine, aminopropanol, tetraethyleneamine, ethylenediamine, ethanolamine, diethanolamine, triethanolamine, hydroxylamine, diethyltriamine, triethylenetetramine, hydroxyethylethylenediamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine.
6. The polishing solution for a gallium nitride substrate material according to claim 1, wherein the oxidizing agent comprises one or more of hypochlorous acid, sodium hypochlorite, potassium hypochlorite, ammonium hypochlorite, perchloric acid, sodium perchlorate, potassium perchlorate, hypobromous acid, sodium hypobromite, perbromic acid, sodium perbromite, hypoiodic acid, sodium hypoiodite, iodic acid, sodium iodate, potassium iodate, periodic acid, sodium periodate, potassium periodate, hydrogen peroxide, sodium peroxide, potassium peroxide, sodium nitrate, sodium nitrite, potassium nitrate, aluminum nitrate, ferric nitrate, sodium percarbonate, potassium percarbonate, sodium persulfate, peroxydisulfate, sodium peroxydisulfate, ammonium peroxydisulfate, peracetic acid or perbenzoic acid, and urea peroxide.
7. The polishing solution for gallium nitride substrate material according to claim 1, wherein the stabilizing dispersant is a hydroxyl alcohol comprising one or more of ethylene glycol, propylene glycol, butylene glycol, hexylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, polypropylene glycol, polyvinyl alcohol, and glycerol.
8. The polishing solution for gallium nitride substrate material according to claim 1, wherein the ordered catalyst is a composite having one or more of features of large specific surface area, high surface energy, porosity, multiple catalytic centers, regular active site distribution, stable structure, good dispersibility, and multiple functional groups.
9. The polishing solution for gallium nitride substrate material according to claim 8, wherein the ordered catalyst is prepared by synthesizing and modifying one or more of simple metal, oxide, salt, carbon, diatomaceous earth, graphite, graphene, montmorillonite, vermiculite and kaolin.
10. The polishing solution for gallium nitride substrate material according to claim 9, wherein the synthetic treatment comprises treatment with one or more of a solid phase milling method, a thermal evaporation method, an ion sputtering method, a vacuum evaporation method, a plasma evaporation method, an electron beam evaporation method, a chemical vapor deposition method, a coprecipitation method, a hydrolytic precipitation method, a hydrothermal and solvothermal method, a microemulsion method, a solvent evaporation method, a template method; the modification treatment comprises one or more of surface organic coating, precipitation reaction coating, mechanochemistry, intercalation modification, organic physics/chemical coating, mechanochemistry/organic coating and inorganic precipitation reaction/organic coating.
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CN115212920B (en) * | 2022-07-11 | 2023-08-15 | 浙江奥首材料科技有限公司 | Chitosan-based dispersion catalyst, semiconductor material polishing solution containing chitosan-based dispersion catalyst, preparation method and application of chitosan-based dispersion catalyst |
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