CN112117347A - Space radiation detection sensor based on graphene field effect transistor - Google Patents
Space radiation detection sensor based on graphene field effect transistor Download PDFInfo
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- CN112117347A CN112117347A CN202010925849.5A CN202010925849A CN112117347A CN 112117347 A CN112117347 A CN 112117347A CN 202010925849 A CN202010925849 A CN 202010925849A CN 112117347 A CN112117347 A CN 112117347A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
Abstract
The invention belongs to the technical field of space radiation environment detection, and particularly discloses a space radiation detection sensor based on a graphene field effect transistor, which comprises a semiconductor substrate absorption layer, an oxide insulation layer, a graphene detection layer, and a source electrode and a drain electrode which are embedded into the semiconductor substrate absorption layer, wherein: the oxide insulating layer is positioned between the semiconductor substrate absorption layer and the graphene detection layer; the source electrode and the drain electrode are located on two sides of the graphene detection layer. The invention has the advantages of portability, light weight, low cost, low power consumption, flexibility, wide temperature range and high flexibility, and can be applied to various environments with radiation detection requirements, such as nuclear safety material detection, space radiation dose monitoring, radiation damage detection of space small satellite electronic equipment, human radiation detection and the like.
Description
Technical Field
The invention relates to the technical field of space radiation environment detection, in particular to a space radiation detection sensor based on a graphene field effect transistor.
Background
The spatial radiation environment includes not only photons, but also charged particles, ionizing atomic nuclear electrons. These particles, when penetrating through a material, create an ionization path, and electrons that strike atoms of the material leave the original location. This ionizing radiation can occur in any material, such as: solid metals, insulators, semiconductors, and even human DNA cells. These radiation effects can damage cells of the human body and cause radiation diseases, leading to health problems such as cataract, cancer, visual impairment, etc., and also damage to the central nervous system of the human body. Astronauts generally fly for months during space mission, and the long-term damage effect of space radiation on human bodies is difficult to predict. Therefore, there is a need for a sensor that is suitable for space tasks, is portable, is lightweight, and is capable of detecting minute amounts of ionizing radiation.
In addition to detecting spatial radiation that affects the human body, the damaging effects of spatial radiation on spatial electronics must also be closely monitored. For example, a miniaturized, lightweight radiation sensor may be used in an array of cubic satellites in earth orbit, and even in an array of small satellites in a space weather station that predicts the weather in space. Therefore, to prevent damage and loss of performance of electronic equipment, it is necessary to ascertain the damaging effects of radiation on these satellites.
Currently, most of the existing radiation sensor technologies are based on rigid materials such as silicon or germanium, and do not have flexibility suitable for various applications such as space bending, for example: is worn by human body. There is therefore a need for a radiation sensor that is portable, highly sensitive, flexible, bendable, can perform multipurpose functions, is wearable by astronauts, or can be used in space electronics without being itself radiation-compromised.
Disclosure of Invention
In order to solve the technical problems, the invention mainly aims to provide a space radiation detection sensor based on a graphene field effect transistor.
A space radiation detection sensor based on a graphene field effect transistor comprises a semiconductor substrate absorption layer, an oxide insulation layer, a graphene detection layer, and a source electrode and a drain electrode which are embedded into the semiconductor substrate absorption layer, wherein:
the oxide insulating layer is positioned between the semiconductor substrate absorption layer and the graphene detection layer;
the source electrode and the drain electrode are located on two sides of the graphene detection layer.
Furthermore, the semiconductor substrate absorption layer is a silicon substrate absorption layer.
Further, the oxide insulating layer is a silicon dioxide insulating layer.
Furthermore, the working temperature of the space radiation detection sensor is 4-2800 ℃.
Further, an electric field is applied between the semiconductor substrate absorption layer and the graphene detection layer.
Further, the ionizing radiation sensed by the spatial radiation detection sensor includes gamma ray radiation, x ray radiation, charged particle radiation, and heavy ion radiation.
According to the space radiation detection sensor based on the graphene field effect tube, the characteristic that graphene is highly sensitive to the change of a local electric field is utilized, and the detection of the space radiation dose is realized by detecting the change of the resistance value of the graphene caused by the change of the local electric field; graphene has the anti-radiation reinforcement characteristic, can reach the long-life in being applied to the radiation detection sensor, high sensitivity, the good effect of high reliability, and this scheme sensor has portablely, the lightweight, low cost, low-power consumption, the flexible, temperature range is wide, the multiple advantage of high flexibility, can apply to in nuclear safety material detection, space radiation dose monitoring, the radiation damage of space microsatellite class electronic equipment detects and human radiation detects the environment that has the radiation detection demand etc. multiple.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a spatial radiation detection sensor based on a graphene field effect transistor according to an embodiment of the present invention;
wherein: the device comprises a 1-semiconductor substrate absorption layer, a 2-oxide insulating layer, a 3-graphene detection layer, a 4-source electrode and a 5-drain electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a space radiation detection sensor based on a graphene field effect transistor, which comprises a semiconductor substrate absorption layer 1, an oxide insulation layer 2, a graphene detection layer 3, and a source electrode 4 and a drain electrode 5 which are embedded into the semiconductor substrate absorption layer 1, as shown in fig. 1, wherein: the oxide insulating layer 2 is positioned between the semiconductor substrate absorption layer 1 and the graphene detection layer 3; the source electrode 4 and the drain electrode 5 are located at both sides of the graphene detection layer 3. The sensor of the embodiment adopts the structural design of the field effect transistor, and has the advantages of portability and light weight compared with the sensor structure in the prior art. The graphene material also has the radiation-resistant reinforcing property, and can achieve the advantages of long service life and low cost when being applied to a radiation detection sensor.
The resistance of the graphene at a "Diarc" point is very sensitive to the change of an electric field, when the resistance is actually measured, the electric field is applied between the semiconductor substrate absorption layer 1 and the graphene detection layer 3, when the semiconductor substrate absorption layer 1 is subjected to ionizing radiation, electric charges generated by ionization are gathered to the bottom of the graphene detection layer 3 under the action of the electric field, the change of a local electric field of the graphene detection layer 3 is caused, the change of the voltage or the resistance of the graphene detection layer 3 is caused, and the energy intensity of the ionizing radiation is sensed by detecting the voltage or the resistance of the graphene detection layer 3. The graphene has high response speed to ionizing radiation, has very high sensitivity to electric field change, and has much higher speed than the speed of detecting radiation by a standard semiconductor detector through drift or collection of ionized charges, so the scheme of the invention can realize high-reliability and high-sensitivity detection on the intensity of the ionizing radiation.
In the embodiment of the present invention, since the semiconductor substrate absorption layer 1 is used as a charge absorption layer generated by radiation, the material selection of the semiconductor substrate absorption layer 1 has great flexibility, and the thickness can be flexibly selected to meet different application requirements. Preferably, the semiconductor substrate absorption layer 1 is made of a silicon material, and the oxide insulation layer 2 is made of a silicon dioxide material. In the detection performance of the sensor according to the embodiment of the invention, a radiation source (radiation may include one of gamma ray radiation, x ray radiation, charged particle radiation and heavy ion radiation) is selected, a dose rate and a total dose are determined, and the radiation dose is calculated by using a function relationship analyzed in advance when the radiation dose is used for detection by detecting a resistance value of the graphene detection layer 3, a gate voltage between the semiconductor substrate absorption layer 1 and the graphene detection layer 3, and other measurement data and a correlation between the total dose and the dose rate.
The graphene material has the advantage of wide temperature range, so that the working temperature range of the space radiation detection sensor provided by the embodiment of the invention is 4-2800 ℃. The radiation detector can meet the detection or monitoring of ionizing radiation dose within a temperature range, can be widely applied to various environments with radiation detection requirements, such as nuclear safety material detection, space radiation dose monitoring, radiation damage detection of space small satellite electronic equipment, human radiation detection and the like, and has strong flexibility.
According to the space radiation detection sensor based on the graphene field effect tube, the characteristic that graphene is highly sensitive to the change of a local electric field is utilized, and the detection of the space radiation dose is realized by detecting the change of the resistance value of the graphene caused by the change of the local electric field; graphene has the anti-radiation reinforcement characteristic, can reach the long-life in being applied to the radiation detection sensor, high sensitivity, the good effect of high reliability, and this scheme sensor has portablely, the lightweight, low cost, low-power consumption, the flexible, temperature range is wide, the multiple advantage of high flexibility, can apply to in nuclear safety material detection, space radiation dose monitoring, the radiation damage of space microsatellite class electronic equipment detects and human radiation detects the environment that has the radiation detection demand etc. multiple.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (6)
1. A space radiation detection sensor based on a graphene field effect transistor is characterized by comprising a semiconductor substrate absorption layer, an oxide insulation layer, a graphene detection layer, and a source electrode and a drain electrode which are embedded into the semiconductor substrate absorption layer, wherein:
the oxide insulating layer is positioned between the semiconductor substrate absorption layer and the graphene detection layer;
the source electrode and the drain electrode are located on two sides of the graphene detection layer.
2. The graphene field effect transistor-based spatial radiation detection sensor of claim 1, wherein the semiconductor-based absorption layer is a silicon-based absorption layer.
3. The graphene field effect transistor-based spatial radiation detection sensor of claim 2, wherein the oxide insulating layer is a silicon dioxide insulating layer.
4. The graphene field effect transistor-based spatial radiation detection sensor of claim 3, wherein the spatial radiation detection sensor has an operating temperature of 4 ℃ to 2800 ℃.
5. The graphene field effect transistor-based spatial radiation detection sensor of claim 3, wherein an electric field is applied between the semiconductor-based absorber layer and the graphene detection layer.
6. The graphene field effect transistor-based spatial radiation detection sensor of claim 3, wherein ionizing radiation sensed by the spatial radiation detection sensor includes gamma ray radiation, x-ray radiation, charged particle radiation, and heavy ion radiation.
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| CN202010925849.5A CN112117347A (en) | 2020-09-04 | 2020-09-04 | Space radiation detection sensor based on graphene field effect transistor |
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| CN202010925849.5A CN112117347A (en) | 2020-09-04 | 2020-09-04 | Space radiation detection sensor based on graphene field effect transistor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104062676A (en) * | 2014-05-29 | 2014-09-24 | 中国空间技术研究院 | X-ray and charged particle detector based on graphene electric field effect and detection method thereof |
| CN108682697A (en) * | 2018-06-11 | 2018-10-19 | 南京大学 | A kind of graphene/C60Laminated film ultraviolet detector and preparation method |
| US10297700B1 (en) * | 2012-04-25 | 2019-05-21 | Magnolia Optical Technologies, Inc. | Thermal detectors using graphene and oxides of graphene and methods of making the same |
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- 2020-09-04 CN CN202010925849.5A patent/CN112117347A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10297700B1 (en) * | 2012-04-25 | 2019-05-21 | Magnolia Optical Technologies, Inc. | Thermal detectors using graphene and oxides of graphene and methods of making the same |
| CN104062676A (en) * | 2014-05-29 | 2014-09-24 | 中国空间技术研究院 | X-ray and charged particle detector based on graphene electric field effect and detection method thereof |
| CN108682697A (en) * | 2018-06-11 | 2018-10-19 | 南京大学 | A kind of graphene/C60Laminated film ultraviolet detector and preparation method |
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