CN112103402A - Method for preparing silicon-based OLED anode and OLED device through dry etching - Google Patents
Method for preparing silicon-based OLED anode and OLED device through dry etching Download PDFInfo
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- CN112103402A CN112103402A CN202011274620.6A CN202011274620A CN112103402A CN 112103402 A CN112103402 A CN 112103402A CN 202011274620 A CN202011274620 A CN 202011274620A CN 112103402 A CN112103402 A CN 112103402A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Abstract
The invention discloses a preparation method of an OLED anode, which comprises the steps of cleaning a silicon substrate by deionized water, forming an anode layer on the silicon substrate, wherein the anode layer comprises at least one conductive film layer of a titanium film layer, a nickel film layer, an aluminum film layer, a platinum film layer, a titanium nitride film layer and an aluminum nitride film layer, uniformly spin-coating an alkali-soluble anti-emission coating layer with the thickness of 0.8 micrometer and a positive photoresist layer with the thickness of 1.5 micrometer on the anode layer, photoetching and developing the photoresist layer and the anti-reflection coating layer to obtain a pattern of pixel points, bombarding the anode layer with etching gas, the bottom of which is not protected by the photoresist layer and the anti-emission coating layer, removing the photoresist layer and the anti-reflection coating layer by using a developing solution to form anode. The OLED device prepared by the method has the advantages of accurate pixel point graph, smaller pixel point distance, high pixel density and the like.
Description
Technical Field
The invention relates to the technical field of display, in particular to a method for preparing a silicon-based OLED anode and an OLED device by dry etching.
Background
A micro Organic Light Emitting Diode (OLED) display has characteristics of self-luminescence, wide viewing angle, high brightness, high lumen efficiency, low operating voltage, fast response time, etc., is considered as one of potential display technologies and can satisfy new demands of consumers for the display technologies and is gradually becoming the mainstream direction. The full-color technology of the organic electroluminescent device mainly comprises a white light device combined color filter method, an RGB pixel independent light emitting method, a down-conversion method and the like, wherein the method of taking white light as backlight and adding a color filter can effectively solve the problem of alignment precision of metal shadow masks of RGB pixels, and is the simplest method for realizing full-color display acknowledged in the industry at present.
Generally, the fabrication of the anode pixel of the white light device combined with the color filter method is completed by a Lift-Off technique (Lift-Off), however, since a solution etching technique is used on the large-sized substrate, the uniformity of the Lift-Off depends on the temperature, concentration, etc. of the solution, so that the pixel pattern on the large-sized substrate is not uniform, and even some metals cannot be lifted Off. In addition, the sub-pixel pitch made using lift-off techniques is large, resulting in microdisplays that do not achieve higher resolution.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the OLED anode pixel prepared by the traditional stripping technology has the problems of uneven pattern, large pixel point distance and the like.
The technical scheme adopted by the invention for solving the technical problem is as follows.
A method for preparing a silicon-based OLED anode by dry etching is characterized by comprising the following steps:
step one, washing a silicon substrate by deionized water;
forming a metal film layer on the silicon substrate, wherein the metal film layer comprises at least one conductive film layer of a titanium film layer, a nickel film layer, an aluminum film layer, a platinum film layer, a titanium nitride film layer and an aluminum nitride film layer;
step three, uniformly spin-coating 0.8 micrometer alkali-soluble anti-emission coating and 1.5 micrometer positive photoresist layer on the anode layer;
step four, photoetching and developing the photoresist layer and the anti-emission coating to obtain a pattern of pixel points;
bombarding the metal film layer with the bottom not protected by the photoresist layer and the anti-emission coating layer by using etching gas, and removing the photoresist layer and the anti-emission coating layer by using a developing solution to form anode pixel points;
and sixthly, cleaning and drying the silicon substrate.
Preferably, in the fifth step, the etching gas is a mixed gas of chlorine and boron trichloride, a mass spectrometer is adopted to monitor an etching end point during etching, and a high-pressure N-methylpyrrolidone solution is used to remove the photoresist layer and the anti-reflection coating.
Preferably, the spin-coating uniformity errors of the anti-emission coating and the photoresist layer are less than three percent.
Preferably, the thickness of the metal film layer is 60 nanometers.
The preparation method of the OLED device is characterized by comprising the following steps:
preparing an anode on a silicon substrate by adopting the preparation method of the OLED anode;
forming a hole functional layer, an organic light emitting layer, an electronic functional layer, a transparent cathode layer and a tin-doped indium oxide thin film layer on the anode in sequence;
forming a sealing layer on the tin-doped indium oxide thin film layer;
forming an RGB color filter layer on the sealing layer;
forming a physical protective layer on the RGB color filter layer;
and sixthly, adhering a glass cover sheet on the physical protective layer.
Preferably, the hole function layer is prepared by a vacuum evaporation method, and the hole function layer comprises at least one of a 33 nanometer hole injection layer, a 10 nanometer hole transmission layer and a 10 nanometer electron blocking layer.
Preferably, the organic light emitting layer is formed by an organic monomolecular white light material with a phosphorescence emission property at room temperature, and the thickness of the organic light emitting layer is 35 nanometers.
Preferably, the electronic function layer is prepared by a vacuum evaporation method, and the electronic function layer comprises at least one of a 15 nanometer electron transport layer, a 10 nanometer electron injection layer and a 10 nanometer hole blocking layer.
Preferably, the transparent cathode layer is prepared by a vacuum evaporation method, the thickness of the transparent cathode layer is 8 to 10 nanometers, and the transparent cathode layer comprises at least one metal of magnesium, aluminum and silver.
Preferably, the tin-doped indium oxide thin film layer is prepared by a vacuum evaporation method, and a sputtering system in an organic film plating machine is adopted to deposit the tin-doped indium oxide thin film layer of 30 to 50 nanometers on the transparent cathode layer.
Preferably, the sealing layer comprises an organic protective layer and an aluminum oxide isolation layer, the sealing layer is prepared by forming the organic protective layer on the surface of the tin-doped indium oxide thin film layer by using nitrogen, oxygen, argon, monosilane, ammonia, nitrous oxide and nitrogen trifluoride in a vacuum cavity of an organic coating device through a chemical vapor deposition method, the thickness of the organic protective layer is 200-400 nanometers, and the aluminum oxide isolation layer is prepared on the surface of the organic protective layer by using trimethylaluminum and oxygen in an atomic layer deposition system through an atomic layer deposition method, and the thickness of the aluminum oxide isolation layer is 180 nanometers.
Preferably, the preparation method of the RGB color filter layer comprises the steps of respectively carrying out glue coating, photoetching, developing and fixing on color glue with different colors, wherein the thickness of the RGB color filter layer is 1-1.3 microns, and finally drying.
Preferably, the physical protective layer is prepared by a vacuum evaporation method, and is manufactured on the RGB color filter layer by using nitrogen, oxygen, argon, monosilane, ammonia, nitrous oxide and nitrogen trifluoride in a vacuum cavity of an organic coating device through a chemical vapor deposition mode, and the thickness of the physical protective layer is 100-500 nanometers.
Preferably, in the process of adhering the glass cover plate on the physical protective layer, the adhesive curing treatment is performed for 20 to 30 minutes after the glass cover plate is adhered.
The invention has the beneficial effects that:
the invention uses the dry etching process to replace the traditional method to prepare the anode pixel points, has accurate pixel point graph, enables the pixel point distance to be smaller (0.3-0.5 mm), and has high pixel density, thereby realizing the miniature full-color organic display with the resolution of 1280 x 1024 on the miniature OLED display of 0.6 inch.
Drawings
FIG. 1 is a schematic diagram of a third step of a completion process according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a step four of the completion process of the embodiment of the present invention.
FIG. 3 is a schematic diagram of an exemplary process flow of five etching gas bombardment steps.
FIG. 4 is a diagram illustrating a step five of a completion process according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of an OLED device according to an embodiment of the present invention.
In the figure: 1. the light-emitting diode comprises a silicon substrate, 2 parts of a metal film layer, 3 parts of an anti-emission coating, 4 parts of a photoresist layer, 5 parts of a mask, 6 parts of etching gas, 7 parts of a hole functional layer, 8 parts of an organic light-emitting layer, 9 parts of an electronic functional layer, 10 parts of a transparent cathode layer, 11 parts of a tin-doped indium oxide thin film layer, 12 parts of a sealing layer, 13 parts of an RGB color filter layer, 14 parts of a physical protective layer, 15 parts of a glass cover sheet and 16 parts of an anode pixel.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
A method for preparing a silicon-based OLED device by dry etching is characterized by comprising the following steps:
the first process, which is to prepare the anode pixel 16 on the silicon substrate 1, includes the following steps:
step one, washing a silicon substrate 1 by deionized water;
step two, forming a metal film layer 2 on the silicon substrate 1, wherein the thickness of the metal film layer 2 is 60 nanometers, and the metal film layer 2 is a titanium film layer in the embodiment;
uniformly spin-coating 0.8-micrometer alkali-soluble anti-emission coating 3 and 1.5-micrometer positive photoresist layer 4 on metal film layer 2, wherein the spin-coating uniformity errors of anti-emission coating 3 and photoresist layer 4 are less than three percent;
fourthly, photoetching and developing the anti-emission coating 3 and the photoresist layer 4 by using a mask 5 to obtain a pattern;
and fifthly, bombarding the metal film layer 2 with the bottom not protected by the anti-emission coating 3 and the photoresist layer 4 by using the etching gas 6, removing the anti-emission coating 3 and the photoresist layer 4 by using a developing solution to form an anode pixel point 16, wherein the etching gas 6 is a mixed gas of chlorine and boron trichloride, monitoring an etching end point by using a mass spectrometer measuring method in the etching process, removing the photoresist layer 4 and the anti-reflection coating 3 by using a high-pressure N-methyl pyrrolidone solution, preventing residual chlorine element in the photoresist layer 4 from reacting with water in the atmosphere to form hydrochloric acid so as to corrode metal, and preventing the temperature of the silicon substrate from being higher than 150 ℃ in the etching process, otherwise, burning the photoresist layer.
And step six, cleaning and drying the silicon substrate 1.
And in the second process, a hole functional layer 7, an organic light-emitting layer 8, an electronic functional layer 9, a transparent cathode layer 10 and a tin-doped indium oxide thin film layer 11 are sequentially formed on the anode pixel point 16. The hole function layer 7 is prepared by a vacuum evaporation method, and the hole function layer 7 comprises a 33-nanometer hole injection layer, a 10-nanometer hole transmission layer and an electron blocking layer. The organic light-emitting layer 8 is formed by an organic monomolecular white light material with phosphorescence emission property at room temperature, and the thickness of the organic light-emitting layer 8 is 35 nanometers. The hole functional layer 7 is prepared by a vacuum evaporation method, and the electron functional layer 9 comprises a 15-nanometer electron transport layer, a 10-nanometer electron injection layer and a hole blocking layer. The transparent cathode layer 10 is prepared by a vacuum evaporation method, the thickness of the transparent cathode layer 10 is 8-10 nanometers, and the transparent cathode layer 10 is made of magnesium-silver alloy. The tin-doped indium oxide thin film layer 11 is prepared by a vacuum evaporation method, and a sputtering system in an organic film plating machine is adopted to deposit the tin-doped indium oxide thin film layer 11 with the thickness of 30 nanometers on the transparent cathode layer 10.
And thirdly, forming a sealing layer 12 on the tin-doped indium oxide thin film layer 11. The sealing layer 12 comprises an organic protective layer and an aluminum oxide isolation layer, the preparation method of the sealing layer 12 is that the organic protective layer is formed on the upper surface of the tin-doped indium oxide thin film layer 11 in a chemical vapor deposition mode by using nitrogen, oxygen, argon, monosilane, ammonia, nitrous oxide and nitrogen trifluoride in a vacuum cavity of organic coating equipment, the thickness of the organic protective layer is 200-400 nanometers, the aluminum oxide isolation layer is prepared on the surface of the organic protective layer in an atomic layer deposition mode by using trimethylaluminum and oxygen in an atomic layer deposition system, and the thickness of the aluminum oxide isolation layer is 180 nanometers.
The fourth flow forms the RGB color filter layer 13 on the sealing layer 13. The preparation method of the RGB color filter layer 13 comprises the steps of respectively carrying out the processes of gluing, photoetching, developing and fixing by adopting color glue with different colors, and finally drying, wherein the thickness of the RGB color filter layer 13 is 1 micron.
And a fifth step of forming a physical protective layer 14 on the RGB color filter layer 13. The physical protective layer 14 is prepared by a vacuum evaporation method, the physical protective layer 14 is manufactured on the RGB color filter layer 13 by using nitrogen, oxygen, argon, monosilane, ammonia, nitrous oxide and nitrogen trifluoride in a vacuum cavity of organic coating equipment through a chemical vapor deposition mode, and the thickness of the physical protective layer 14 is 100 nanometers.
And sixthly, adhering a glass cover sheet 15 on the physical protection layer 14. In the process of attaching the cover glass 15 to the physical protective layer 14, the adhesive curing treatment is performed for 20 minutes after the attachment of the cover glass 15 is completed.
It will be obvious to those skilled in the art that the present invention may be varied in many ways, and that such variations are not to be regarded as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.
Claims (14)
1. A method for preparing a silicon-based OLED anode by dry etching is characterized by comprising the following steps:
step one, washing a silicon substrate by deionized water;
forming a metal film layer on the silicon substrate, wherein the metal film layer comprises at least one conductive film layer of a titanium film layer, a nickel film layer, an aluminum film layer, a platinum film layer, a titanium nitride film layer and an aluminum nitride film layer;
uniformly spin-coating 0.8-micrometer alkali-soluble anti-emission coating and 1.5-micrometer positive photoresist layer on the metal film layer;
step four, photoetching and developing the photoresist layer and the anti-reflection coating to obtain a pattern of pixel points;
bombarding the metal film layer with the bottom not protected by the photoresist layer and the anti-reflection coating by using etching gas, and removing the photoresist layer and the anti-reflection coating by using a developing solution to form anode pixel points;
and sixthly, cleaning and drying the silicon substrate.
2. The method for preparing the silicon-based OLED anode by dry etching according to claim 1, wherein the method comprises the following steps: in the fifth step, the etching gas is a mixed gas of chlorine and boron trichloride, a mass spectrometer measurement method is adopted to monitor an etching end point in the etching process, and a high-pressure N-methyl pyrrolidone solution is used for removing the photoresist layer and the anti-reflection coating.
3. The method for preparing the silicon-based OLED anode by dry etching according to claim 1, wherein the method comprises the following steps: the spin-coating uniformity errors of the anti-emission coating and the photoresist layer are less than three percent.
4. The method for preparing the silicon-based OLED anode by dry etching according to claim 1, wherein the method comprises the following steps: the thickness of the metal film layer is 60 nanometers.
5. The preparation method of the OLED device is characterized by comprising the following steps:
a first process of preparing an anode on a silicon substrate by the method of preparing an OLED anode according to any one of claims 1 to 3;
forming a hole functional layer, an organic light emitting layer, an electronic functional layer, a transparent cathode layer and a tin-doped indium oxide thin film layer on the anode in sequence;
forming a sealing layer on the tin-doped indium oxide thin film layer;
forming an RGB color filter layer on the sealing layer;
forming a physical protective layer on the RGB color filter layer;
and sixthly, adhering a glass cover sheet on the physical protective layer.
6. The method of making an OLED device of claim 5, wherein: the hole function layer is prepared by a vacuum evaporation method, and comprises at least one of a 33 nanometer hole injection layer, a 10 nanometer hole transmission layer and a 10 nanometer electron blocking layer.
7. The method of making an OLED device of claim 5, wherein: the organic light-emitting layer is formed by an organic monomolecular white light material with a phosphorescence emission property at room temperature, and the thickness of the organic light-emitting layer is 35 nanometers.
8. The method of making an OLED device of claim 5, wherein: the electronic function layer is prepared by a vacuum evaporation method, and comprises at least one of a 15 nanometer electron transmission layer, a 10 nanometer electron injection layer and a 10 nanometer hole blocking layer.
9. The method of making an OLED device of claim 5, wherein: the transparent cathode layer is prepared by a vacuum evaporation method, the thickness of the transparent cathode layer is 8-10 nanometers, and the transparent cathode layer comprises at least one metal of magnesium, aluminum and silver.
10. The method of making an OLED device of claim 5, wherein: the tin-doped indium oxide thin film layer is prepared by a vacuum evaporation method, and a sputtering system in an organic film plating machine is adopted to deposit the tin-doped indium oxide thin film layer of 30-50 nanometers on the transparent cathode layer.
11. The method of making an OLED device of claim 5, wherein: the sealing layer comprises an organic protective layer and an aluminum oxide isolation layer, the preparation method of the sealing layer comprises the steps of forming the organic protective layer on the surface of the tin-doped indium oxide thin film layer in a vacuum cavity of organic coating equipment by using nitrogen, oxygen, argon, monosilane, ammonia, nitrous oxide and nitrogen trifluoride through a chemical vapor deposition mode, wherein the thickness of the organic protective layer is 200-400 nanometers, preparing the aluminum oxide isolation layer on the surface of the organic protective layer in an atomic layer deposition system by using trimethylaluminum and oxygen through an atomic layer deposition mode, and the thickness of the aluminum oxide isolation layer is 180 nanometers.
12. The method of making an OLED device of claim 5, wherein: the preparation method of the RGB color filter layer comprises the steps of respectively carrying out glue coating, photoetching, developing and fixing on color glue with different colors, wherein the thickness of the RGB color filter layer is 1-1.3 microns, and finally drying.
13. The method of making an OLED device of claim 5, wherein: the physical protective layer is prepared by a vacuum evaporation method, and is manufactured on the RGB color filter layer by using nitrogen, oxygen, argon, monosilane, ammonia, nitrous oxide and nitrogen trifluoride in a vacuum cavity of organic coating equipment through a chemical vapor deposition mode, and the thickness of the physical protective layer is 100-500 nanometers.
14. The method of making an OLED device of claim 5, wherein: and in the process of pasting the glass cover plate on the physical protective layer, carrying out adhesive curing treatment for 20-30 minutes after finishing pasting the glass cover plate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023235215A1 (en) * | 2022-05-31 | 2023-12-07 | Applied Materials, Inc. | Oled anode structures including amorphous transparent conducting oxides |
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| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN110739398A (en) * | 2019-10-12 | 2020-01-31 | 安徽熙泰智能科技有限公司 | Micro-display device anode silver reflecting layer and etching method of anode structure |
| CN111682051A (en) * | 2020-06-23 | 2020-09-18 | 昆明京东方显示技术有限公司 | Silicon-based organic electroluminescent display substrate, manufacturing method thereof and display panel |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103242985A (en) * | 2013-04-03 | 2013-08-14 | 云南北方奥雷德光电科技股份有限公司 | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process |
| CN107359262A (en) * | 2017-07-07 | 2017-11-17 | 安徽熙泰智能科技有限公司 | A kind of transparent OLED micro-display devices and preparation method thereof |
| CN110739398A (en) * | 2019-10-12 | 2020-01-31 | 安徽熙泰智能科技有限公司 | Micro-display device anode silver reflecting layer and etching method of anode structure |
| CN111682051A (en) * | 2020-06-23 | 2020-09-18 | 昆明京东方显示技术有限公司 | Silicon-based organic electroluminescent display substrate, manufacturing method thereof and display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023235215A1 (en) * | 2022-05-31 | 2023-12-07 | Applied Materials, Inc. | Oled anode structures including amorphous transparent conducting oxides |
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Application publication date: 20201218 |