CN112103324B - Display device and display panel thereof - Google Patents
Display device and display panel thereof Download PDFInfo
- Publication number
- CN112103324B CN112103324B CN202011010616.9A CN202011010616A CN112103324B CN 112103324 B CN112103324 B CN 112103324B CN 202011010616 A CN202011010616 A CN 202011010616A CN 112103324 B CN112103324 B CN 112103324B
- Authority
- CN
- China
- Prior art keywords
- layer
- sub
- thickness
- pixel structure
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
Abstract
The invention provides a display device and a display panel thereof, wherein the display panel comprises: a substrate and a plurality of pixel units disposed on the substrate, each pixel unit comprising at least: the light-emitting device comprises a first sub-pixel structure, a second sub-pixel structure, a third sub-pixel structure and a fourth sub-pixel structure, wherein the light-emitting color of the fourth sub-pixel structure is the same as that of the first sub-pixel structure, and the cavity length of a microcavity structure corresponding to the fourth sub-pixel structure is larger than that of a microcavity structure corresponding to the first sub-pixel structure; the light emitting wavelength of the first sub-pixel structure is larger than the light emitting wavelength of the second sub-pixel structure, and the light emitting wavelength of the second sub-pixel structure is larger than the light emitting wavelength of the third sub-pixel structure. According to the embodiment of the invention, the white light large visual character deviation problem can be improved.
Description
Technical Field
The invention relates to the technical field of display equipment, in particular to a display device and a display panel thereof.
Background
Compared with the liquid crystal and plasma displays widely used at present, the organic light-Emitting Diode (OLED) device has the advantages of self-luminescence, rich colors, high response speed, wide viewing angle, light weight, thin thickness, low power consumption, capability of realizing flexible display and the like.
In general, OLED devices can be classified into bottom-emitting OLED devices (BEOLED) and top-emitting OLED devices (TEOLED). Wherein, the TEOLED device is to grow an opaque electrode on a glass or silicon substrate, regrow a light emitting layer, and emit light from a transparent or semitransparent cathode on top when a voltage is applied to the light emitting layer. The TEOLED device has an advantage of a high aperture ratio as compared with the BEOLED device, and thus is widely used.
However, in the related art, when the OLED screen is viewed at different viewing angles, the larger the viewing angle, the larger the color change of the screen, i.e., the more serious the color cast problem. For example, white light at a positive viewing angle, and may be reddish or yellowish at a 45 degree viewing angle.
Disclosure of Invention
The invention provides a display device and a display panel thereof, which are used for solving the defects in the related art.
To achieve the above object, a first aspect of an embodiment of the present invention provides a display panel, including: a substrate and a plurality of pixel units arranged on the substrate, wherein each pixel unit at least comprises:
the light emitting device comprises a first sub-pixel structure, a second sub-pixel structure, a third sub-pixel structure and a fourth sub-pixel structure, wherein the light emitting color of the fourth sub-pixel structure is the same as that of the first sub-pixel structure, and the cavity length of a microcavity structure corresponding to the fourth sub-pixel structure is larger than that of a microcavity structure corresponding to the first sub-pixel structure; the light-emitting wavelength of the first sub-pixel structure is larger than the light-emitting wavelength of the second sub-pixel structure, and the light-emitting wavelength of the second sub-pixel structure is larger than the light-emitting wavelength of the third sub-pixel structure.
Optionally, the first sub-pixel structure includes a first anode, a first cathode, and a first light emitting layer between the first anode and the first cathode, and the fourth sub-pixel structure includes a fourth anode, a fourth cathode, and a fourth light emitting layer between the fourth anode and the fourth cathode, wherein a thickness of the fourth light emitting layer is greater than a thickness of the first light emitting layer.
Optionally, the first sub-pixel structure sequentially includes a first anode, a first hole injection layer, a first hole transport layer, a first electron blocking layer, a first light emitting layer, a first hole blocking layer, a first electron transport layer, a first electron injection layer, and a first cathode, and the fourth sub-pixel structure sequentially includes a fourth anode, a fourth hole injection layer, a fourth hole transport layer, a fourth electron blocking layer, a fourth light emitting layer, a fourth hole blocking layer, a fourth electron transport layer, a fourth electron injection layer, and a fourth cathode; the thickness of the fourth hole injection layer is greater than the thickness of the first hole injection layer, and/or the thickness of the fourth hole transport layer is greater than the thickness of the first hole transport layer, and/or the thickness of the fourth electron blocking layer is greater than the thickness of the first electron blocking layer, and/or the thickness of the fourth light emitting layer is greater than the thickness of the first light emitting layer, and/or the thickness of the fourth hole blocking layer is greater than the thickness of the first hole blocking layer, and/or the thickness of the fourth electron transport layer is greater than the thickness of the first electron transport layer, and/or the thickness of the fourth electron injection layer is greater than the thickness of the first electron injection layer.
Optionally, the ratio of the thickness of the fourth light-emitting layer to the thickness of the first light-emitting layer ranges from 1.5 to 2.5.
Optionally, the first sub-pixel structure is disposed immediately adjacent to the fourth sub-pixel structure.
Optionally, each pixel unit further includes: a fifth sub-pixel structure, wherein the light-emitting color of the fifth sub-pixel structure is the same as that of the second sub-pixel structure, and the cavity length of the microcavity structure corresponding to the fifth sub-pixel structure is smaller than that of the microcavity structure corresponding to the second sub-pixel structure;
and/or a sixth sub-pixel structure, wherein the luminous color of the sixth sub-pixel structure is the same as the luminous color of the third sub-pixel structure, and the cavity length of the microcavity structure corresponding to the sixth sub-pixel structure is smaller than that of the microcavity structure corresponding to the third sub-pixel structure.
Optionally, the second sub-pixel structure includes a second anode, a second cathode, and a second light emitting layer between the second anode and the second cathode, and the fifth sub-pixel structure includes a fifth anode, a fifth cathode, and a fifth light emitting layer between the fifth anode and the fifth cathode, the fifth light emitting layer having a thickness less than a thickness of the second light emitting layer;
or the third sub-pixel structure comprises a third anode, a third cathode and a third light emitting layer positioned between the third anode and the third cathode, and the sixth sub-pixel structure comprises a sixth anode, a sixth cathode and a sixth light emitting layer positioned between the sixth anode and the sixth cathode, wherein the thickness of the sixth light emitting layer is smaller than that of the third light emitting layer.
Optionally, the second sub-pixel structure sequentially includes a second anode, a second hole injection layer, a second hole transport layer, a second electron blocking layer, a second light emitting layer, a second hole blocking layer, a second electron transport layer, a second electron injection layer, and a second cathode, and the fifth sub-pixel structure sequentially includes a fifth anode, a fifth hole injection layer, a fifth hole transport layer, a fifth electron blocking layer, a fifth light emitting layer, a fifth hole blocking layer, a fifth electron transport layer, a fifth electron injection layer, and a fifth cathode; the thickness of the fifth hole injection layer is smaller than the thickness of the second hole injection layer, and/or the thickness of the fifth hole transport layer is smaller than the thickness of the second hole transport layer, and/or the thickness of the fifth electron blocking layer is smaller than the thickness of the second electron blocking layer, and/or the thickness of the fifth light emitting layer is smaller than the thickness of the second light emitting layer, and/or the thickness of the fifth hole blocking layer is smaller than the thickness of the second hole blocking layer, and/or the thickness of the fifth electron transport layer is smaller than the thickness of the second electron transport layer, and/or the thickness of the fifth electron injection layer is smaller than the thickness of the second electron injection layer;
or the third sub-pixel structure sequentially comprises a third anode, a third hole injection layer, a third hole transport layer, a third electron blocking layer, a third light emitting layer, a third hole blocking layer, a third electron transport layer, a third electron injection layer and a third cathode, and the sixth sub-pixel structure sequentially comprises a sixth anode, a sixth hole injection layer, a sixth hole transport layer, a sixth electron blocking layer, a sixth light emitting layer, a sixth hole blocking layer, a sixth electron transport layer, a sixth electron injection layer and a sixth cathode; the thickness of the sixth hole injection layer is smaller than the thickness of the third hole injection layer, and/or the thickness of the sixth hole transport layer is smaller than the thickness of the third hole transport layer, and/or the thickness of the sixth electron blocking layer is smaller than the thickness of the third electron blocking layer, and/or the thickness of the sixth light emitting layer is smaller than the thickness of the third light emitting layer, and/or the thickness of the sixth hole blocking layer is smaller than the thickness of the third hole blocking layer, and/or the thickness of the sixth electron transport layer is smaller than the thickness of the third electron transport layer, and/or the thickness of the sixth electron injection layer is smaller than the thickness of the third electron injection layer.
Optionally, the ratio of the thickness of the fifth light-emitting layer to the thickness of the second light-emitting layer is in the range of 0.5-0.8; or the ratio of the thickness of the sixth light-emitting layer to the thickness of the third light-emitting layer is in the range of 0.5 to 0.8.
Optionally, the second sub-pixel structure is disposed in close proximity to the fifth sub-pixel structure; or the third sub-pixel structure is disposed immediately adjacent to the sixth sub-pixel structure.
Optionally, the first sub-pixel structure and the fourth sub-pixel structure emit red light, the second sub-pixel structure emits green light, and the third sub-pixel structure emits blue light.
Optionally, an encapsulation layer is disposed on a side of the plurality of pixel units away from the substrate, and a polarizer or a color filter layer is disposed on a side of the encapsulation layer away from the substrate.
A second aspect of an embodiment of the present invention provides a display device, including: a display panel according to any one of the preceding claims.
In the above embodiment of the present invention, by providing the fourth sub-pixel structure, the light emitting color of the fourth sub-pixel structure is the same as the light emitting color of the first sub-pixel structure, and the cavity length of the microcavity structure corresponding to the fourth sub-pixel structure is greater than the cavity length of the microcavity structure corresponding to the first sub-pixel structure, so that on one hand, the light emitting wavelength of the fourth sub-pixel structure is greater than the light emitting wavelength of the first sub-pixel structure under the same side view angle, and on the other hand, the light emitting brightness attenuation rate of the fourth sub-pixel is increased and then reduced along with the increase of the side view angle, so as to compensate for the problem of too fast light emitting brightness attenuation of the first sub-pixel structure. The color coordinate shift and the luminance improvement can improve the color shift caused by the fact that the red luminance decays too fast along with the increase of the viewing angle, especially the color shift problem under the large viewing angle of white light.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic top view of a display panel according to a first embodiment of the present invention;
fig. 2 is an enlarged view of one pixel unit in fig. 1;
FIG. 3 is a cross-sectional view taken along line AA in FIG. 2;
FIG. 4 is a color plot of a fourth sub-pixel structure and a first sub-pixel structure at various viewing angles;
fig. 5 is an enlarged view in the black circle in fig. 4;
fig. 6 is a graph showing a change in luminance decay rate of outgoing light with a viewing angle of a left-right direction away from front view when the fourth sub-pixel structure and the first sub-pixel structure emit light, respectively;
fig. 7 is a graph showing a change in viewing angle of a display panel and a control display panel in which color shift is deviated from front view in a left-right direction in a case of white light emission from front view in a horizontal direction;
fig. 8 is a graph showing a change in viewing angle of a display panel and a control display panel as the vertical direction deviates from the front view in the case of white light emission from the front view;
fig. 9 is a schematic cross-sectional structure of a display panel according to a second embodiment of the present invention;
fig. 10 is a schematic top view of a pixel unit in a display panel according to a third embodiment of the present invention;
fig. 11 is a cross-sectional view taken along the BB line in fig. 10.
List of reference numerals:
First hole injection layer HIL1 first hole transport layer HTL1
First electron blocking layer EBL1 first electron injection layer EIL1
First electron transport layer ETL1 first hole blocking layer HBL1
Second light emitting layer 112c second hole injection layer HIL2
Second hole transport layer HTL2 second electron blocking layer EBL2
Second electron injection layer EIL2 second electron transport layer ETL2
Second hole blocking layer HBL2 third anode 113a
Third hole injection layer HIL3 third hole transport layer HTL3
Third electron blocking layer EBL3 third electron injection layer EIL3
Third electron transport layer ETL3 third hole blocking layer HBL3
Fourth light emitting layer 114c fourth hole injection layer HIL4
Fourth hole transport layer HTL4 fourth electron blocking layer EBL4
Fourth electron injection layer EIL4 fourth electron transport layer ETL4
Fourth hole blocking layer HBL4 fifth anode 115a
Fifth cathode 115b fifth light emitting layer 115c
Sixth light-emitting layer 116c
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of apparatus and methods consistent with aspects of the invention as detailed in the accompanying claims.
Fig. 1 is a schematic top view of a display panel according to a first embodiment of the present invention. Fig. 2 is an enlarged view of one pixel unit in fig. 1. Fig. 3 is a cross-sectional view taken along line AA in fig. 2.
Referring to fig. 1 to 3, a display panel 1 includes: a substrate 10 and a plurality of pixel units 11 disposed on the substrate 10, each pixel unit 11 including at least:
the light emitting color of the fourth sub-pixel structure 114 is the same as the light emitting color of the first sub-pixel structure 111, and the cavity length of the microcavity structure corresponding to the fourth sub-pixel structure 114 is greater than the cavity length of the microcavity structure corresponding to the first sub-pixel structure 111; the light emitting wavelength of the first sub-pixel structure 111 is greater than the light emitting wavelength of the second sub-pixel structure 112, and the light emitting wavelength of the second sub-pixel structure 112 is greater than the light emitting wavelength of the third sub-pixel structure 113.
Referring to fig. 1 to 3, the substrate 10 may be a flexible substrate or a hard substrate. The material of the flexible substrate may be polyimide and the material of the rigid substrate may be glass.
In some embodiments, a planarization layer (not shown) is disposed between the substrate 10 and the pixel unit 11.
In some embodiments, a pixel driving circuit is further disposed between the substrate 10 and the planarization layer. In other words, the light emission mode of each sub-pixel structure 111, 112, 113, 114 is Active Matrix (AM).
In some embodiments, the light emission of each sub-pixel structure 111, 112, 113, 114 is Passive Matrix (PM), and there is no pixel driving circuit between the substrate 10 and the planarization layer.
In this embodiment, referring to fig. 3, the first sub-pixel structure 111 may include a first anode 111a, a first cathode 111b, and a first light emitting layer 111c between the first anode 111a and the first cathode 111 b.
The second sub-pixel structure 112 may include a second anode 112a, a second cathode 112b, and a second light emitting layer 112c between the second anode 112a and the second cathode 111 b.
The third sub-pixel structure 113 may include a third anode electrode 113a, a third cathode electrode 113b, and a third light emitting layer 113c between the third anode electrode 113a and the third cathode electrode 113 b.
The fourth sub-pixel structure 114 may include a fourth anode 114a, a fourth cathode 114b, and a fourth light emitting layer 114c between the fourth anode 114a and the fourth cathode 114 b.
The materials of the first, second, third and fourth light emitting layers 111c, 112c, 113c and 114c may be organic light emitting materials (OLEDs). In this embodiment, the materials of the first light emitting layer 111c and the fourth light emitting layer 114c may be red-emitting OLEDs, the material of the second light emitting layer 112c may be green-emitting OLEDs, and the material of the third light emitting layer 113c may be red-blue-emitting OLEDs. In other words, the first sub-pixel structure 111 and the fourth sub-pixel structure 114 emit red light, the second sub-pixel structure 112 emits green light, and the third sub-pixel structure 113 emits blue light. The first sub-pixel structure 111, the second sub-pixel structure 112, the third sub-pixel structure 113 and the fourth sub-pixel structure 114 of the three primary colors red, green and blue are alternately distributed.
In other embodiments, the light emitting unit 11 may further include sub-pixel structures of other colors, which is not limited in this embodiment.
In this embodiment, two blocks are provided because the lifetime of the green-emitting OLED is short. In other embodiments, a block may be provided.
The materials of the first anode 111a, the second anode 112a, the third anode 113a, and the fourth anode 114a may be light reflective materials. The light reflecting material may be a material including silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), an alloy of silver and lead (Ag: pb), an alloy of aluminum and neodymium (Al: nd), an alloy of silver platinum copper (Ag: pt: cu), and the like. When silver and an alloy thereof are used as the light reflecting material, a layer of ITO, IZO, or IGZO may be disposed between the first anode 111a, the second anode 112a, the third anode 113a, and the fourth anode 114a, respectively, and the organic light emitting material layer.
The materials of the first cathode 111b, the second cathode 112b, the third cathode 113b, and the fourth cathode 114b may be materials having a partially light-transmitting and partially light-reflecting function (semi-transparent and semi-reflective materials). The first cathode 111b, the second cathode 112b, the third cathode 113b, and the fourth cathode 114b may have a single-layer structure, and the materials of the single-layer structure may include: at least one of magnesium, silver, aluminum, for example: mixtures of magnesium and silver or mixtures of aluminum and silver. The first cathode 111b, the second cathode 112b, the third cathode 113b, and the fourth cathode 114b may have a three-layer structure of a transparent conductive layer, an intermediate layer, and a transparent conductive layer. The material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO, and the material of the intermediate layer includes: at least one of magnesium, silver, aluminum, for example: mixtures of magnesium and silver or mixtures of aluminum and silver. In other words, the display panel 1 is a top emission structure.
In the present embodiment, the first anode 111a, the second anode 112a, the third anode 113a and the fourth anode 114a are close to the substrate 10, and the first cathode 111b, the second cathode 112b, the third cathode 113b and the fourth cathode 114b are far away from the substrate 10.
Referring to fig. 3, after the light is emitted from the light emitting layer, the light is reflected back and forth between the cathode and the anode (i.e., in the microcavity structure) multiple times, and finally emitted from the cathode side. When the outgoing light is emitted, the phase difference δ satisfies the formula:
δ＝2j(λ/2)＝2ndcosθ；
wherein: j is an integer, lambda is the wavelength of the emergent light, n is the average refractive index of the medium in the microcavity structure, d is the thickness of the microcavity structure, and theta is the reflection angle.
In general, for a given device structure, the average refractive index n of the medium in the microcavity structure and the thickness d of the microcavity structure are both fixed values. It can be seen that as the reflection angle θ increases, the wavelength λ decreases, i.e., as the viewing angle from the front increases, the exit light of the microcavity structure has a blue-shift phenomenon.
According to the principle of a Fabry-Perot resonant cavity, when the frequency of incident light in the resonant cavity meets the resonance condition of the resonant cavity, a high peak value appears in a transmission spectrum and corresponds to the high transmittance, and therefore the resonant cavity with the preset characteristic can transmit light with the corresponding wavelength. Therefore, the cavity length of the Fabry-Perot resonant cavity (corresponding to the microcavity structure of the present embodiment) has a correspondence relationship with the wavelength of light, and microcavity structures with different cavity lengths can only transmit light with specific wavelengths.
The specific formula of the Fabry-Perot resonance equation is:
wherein: ni and di represent the refractive index and thickness, respectively, of the films in the cavity, Σni represents the total optical thickness of the films in the cavity,
and->
The reflection phase shift of the two mirrors, namely anode and cathode, m is the mode series, and λ is the wavelength of the outgoing light.
Thus, according to the above formula, the cavity length of the microcavity structure is proportional to the wavelength λ of the transmitted light, and the larger the wavelength value of the transmitted light is required, the larger the cavity length value of the microcavity structure is.
The cavity length of the microcavity structure corresponding to the fourth sub-pixel structure 114 is greater than that of the microcavity structure corresponding to the first sub-pixel structure 111, so that the emission wavelength of the fourth sub-pixel structure 114 is greater than that of the first sub-pixel structure 111, that is, the color of red light emitted by the former is darker.
To verify the positions of the color coordinates CIEx and CIEy of the fourth sub-pixel structure 114 and the first sub-pixel structure 111, taking the thickness of the fourth light emitting layer 114c being 2 times the thickness of the first light emitting layer 111c as an example in the display panel 1, fig. 4 is a graph of color coordinates at various viewing angles, and fig. 5 is an enlarged view of the black circle in fig. 4.
Referring to fig. 4 and 5, it can be seen that the fourth sub-pixel structure 114 has a larger color coordinate CIEx with respect to the first sub-pixel structure 111, meaning that the color of the red light is darker.
In the display panel 1, the thickness of the fourth light emitting layer 114c is 2 times that of the first light emitting layer 111c, and fig. 6 is a graph showing the change of the luminance decay rate (L-decay) of the emitted light with the right-left direction away from the front viewing angle when the fourth sub-pixel structure 114 and the first sub-pixel structure 111 emit light respectively. Referring to fig. 6, it can be seen that the luminance decay rate of the outgoing light of the fourth sub-pixel structure 114 increases and decreases with increasing viewing angle from front view, and the luminance at a large angle is also greater than that at 0 ° front view.
In one embodiment, at the maximum brightness of white light in front view (0 ° view angle), the brightness of the first sub-pixel structure 111, the fourth sub-pixel structure 114, the second sub-pixel structure 112, and the third sub-pixel structure 113 is respectively: 114cd/m 2 ，1.17cd/m 2 ，298cd/m 2 ，23cd/m 2 The CIE color coordinates are (0.6871,0.312), (0.711,0.289), (0.1986,0.7601), (0.1818,0.0364), respectively. The corresponding white light color coordinates are (0.30,0.31).
The cavity length of the microcavity structure corresponding to the fourth sub-pixel structure 114 is greater than the cavity length of the microcavity structure corresponding to the first sub-pixel structure 111 by: the thickness of the fourth light emitting layer 114c is greater than that of the first light emitting layer 111c. In some embodiments, the ratio of the thickness of the fourth light emitting layer 114c to the thickness of the first light emitting layer 111c ranges from 1.5 to 2.5.
It should be noted that, the ratio ranges in this embodiment all include the end points.
The color coordinate shift and the luminance improvement can improve the color shift caused by the fact that the red luminance decays too fast along with the increase of the viewing angle, especially the color shift problem under the large viewing angle of white light.
To verify the above-mentioned advantages, taking the example that the thickness of the fourth light-emitting layer 114c is 2 times that of the first light-emitting layer 111c in the display panel 1, in contrast to the display panel, only the fourth sub-pixel 114 is omitted, and fig. 7 is a graph of the change of color shift with the left-right direction from the viewing angle of the front view in the case of white light emission in the horizontal direction, with other structures and parameters unchanged; fig. 8 is a graph showing a change in viewing angle of a color shift from a front view in the vertical direction in a case where white light is emitted from the front view.
In the plan view shown in fig. 1 and 2, the horizontal direction H is parallel to the short side direction of the first sub-pixel structure 111, and the vertical direction V is parallel to the long side direction of the first sub-pixel structure 111.
Referring to fig. 7 and 8, it can be seen that the color shift in the horizontal direction H is significantly reduced from 14JNCD to 6JNCD and the color shift in the vertical direction V is also reduced to some extent in the display panel 1.
In some embodiments, the side of the plurality of pixel units 11 remote from the substrate 10 may be provided with an encapsulation layer, and the side of the encapsulation layer remote from the substrate 10 may be provided with a polarizer or a color filter layer.
The color filter layer includes color filter blocks corresponding to the emission colors of the respective sub-pixel structures 111, 112, 113, 114, with a black matrix between adjacent color filter blocks. In some embodiments, the first sub-pixel structure 111 and the fourth sub-pixel structure 114 may be disposed in close proximity to each other to sequentially dispose red color filter blocks.
In some embodiments, a light extraction layer (CPL) may also be provided between the plurality of pixel units 11 and the encapsulation layer.
Fig. 9 is a schematic cross-sectional structure of a display panel according to a second embodiment of the present invention. Referring to fig. 9, the display panel 2 in this embodiment is substantially the same as the display panel 1 in fig. 1 to 3 in structure, except that: in the first sub-pixel structure 111, between the first anode 111a and the first light emitting layer 111c, there is further disposed: the first hole injection layer HIL1, the first hole transport layer HTL1, and the first electron blocking layer EBL1, and further provided between the first cathode 111b and the first light emitting layer 111c are: a first electron injection layer EIL1, a first electron transport layer ETL1, and a first hole blocking layer HBL1; in the second sub-pixel structure 112, a second anode 112a and a second light emitting layer 112c are further disposed between: the second hole injection layer HIL2, the second hole transport layer HTL2, and the second electron blocking layer EBL2, and further provided between the second cathode 112b and the second light emitting layer 112c are: a second electron injection layer EIL2, a second electron transport layer ETL2, and a second hole blocking layer HBL2; in the third sub-pixel structure 113, a third anode 113a and a third light emitting layer 113c are further disposed between: the third hole injection layer HIL3, the third hole transport layer HTL3, and the third electron blocking layer EBL3 are further provided between the third cathode 113b and the third light emitting layer 113 c: a third electron injection layer EIL3, a third electron transport layer ETL3 and a third hole blocking layer HBL3; in the fourth sub-pixel structure 114, a fourth anode 114a and a fourth light emitting layer 114c are further disposed between: the fourth hole injection layer HIL4, the fourth hole transport layer HTL4, and the fourth electron blocking layer EBL4, and further provided between the fourth cathode 114b and the fourth light emitting layer 114c are: a fourth electron injection layer EIL4, a fourth electron transport layer ETL4 and a fourth hole blocking layer HBL4.
Realizing that the cavity length of the microcavity structure corresponding to the fourth sub-pixel structure 114 is greater than the cavity length of the microcavity structure corresponding to the first sub-pixel structure 111 may be by: the fourth hole injection layer HIL4 has a thickness greater than the thickness of the first hole injection layer HIL1, and/or the fourth hole transport layer HTL4 has a thickness greater than the thickness of the first hole transport layer HTL1, and/or the fourth electron blocking layer EBL4 has a thickness greater than the thickness of the first electron blocking layer EBL1, and/or the fourth light emitting layer 114c has a thickness greater than the thickness of the first light emitting layer 111c, and/or the fourth hole blocking layer HBL4 has a thickness greater than the thickness of the first hole blocking layer HBL1, and/or the fourth electron transport layer ETL4 has a thickness greater than the thickness of the first electron transport layer ETL1, and/or the fourth electron injection layer EIL4 has a thickness greater than the thickness of the first electron injection layer EIL 1.
Fig. 10 is a schematic top view of a pixel unit in a display panel according to a third embodiment of the invention. Fig. 11 is a cross-sectional view taken along the BB line in fig. 10. Referring to fig. 10 and 11, the display panel 3 in the present embodiment is substantially identical in structure to the display panels 1, 2 in fig. 1 to 3 and 9, and differs only in that: each pixel unit 11 further includes: the light emitting color of the fifth sub-pixel structure 115 is the same as the light emitting color of the second sub-pixel structure 112, and the cavity length of the microcavity structure corresponding to the fifth sub-pixel structure 115 is smaller than the cavity length of the microcavity structure corresponding to the second sub-pixel structure 112;
and a sixth sub-pixel structure 116, wherein the light emitting color of the sixth sub-pixel structure 116 is the same as the light emitting color of the third sub-pixel structure 113, and the cavity length of the microcavity structure corresponding to the sixth sub-pixel structure 116 is smaller than the cavity length of the microcavity structure corresponding to the third sub-pixel structure 113.
The cavity length of the microcavity structure corresponding to the fifth sub-pixel structure 115 is smaller than that of the microcavity structure corresponding to the second sub-pixel structure 112, so that the emission wavelength of the fifth sub-pixel structure 115 is smaller than that of the second sub-pixel structure 112, that is, the color of green light emitted by the former is darker.
In this embodiment, referring to fig. 11, the fifth sub-pixel structure 115 may include a fifth anode 115a, a fifth cathode 115b, and a fifth light emitting layer 115c between the fifth anode 115a and the fifth cathode 115 b; the sixth subpixel structure 116 may include a sixth anode 116a, a sixth cathode 116b, and a sixth light emitting layer 116c between the sixth anode 116a and the sixth cathode 116 b.
The cavity length of the microcavity structure corresponding to the fifth subpixel structure 115 may be smaller than the cavity length of the microcavity structure corresponding to the second subpixel structure 112 by: the thickness of the fifth light emitting layer 115c is smaller than that of the second light emitting layer 112c. In some embodiments, the ratio of the thickness of the fifth light emitting layer 115c to the thickness of the second light emitting layer 112c may range from 0.5 to 0.8.
The cavity length of the microcavity structure corresponding to the sixth sub-pixel structure 116 is smaller than that of the microcavity structure corresponding to the third sub-pixel structure 113, so that the emission wavelength of the sixth sub-pixel structure 116 is smaller than that of the third sub-pixel structure 113, that is, the color of blue light emitted by the former is darker.
Since for red light the wavelength is shorter, the wavelength is shifted towards the sensitivity of the human eye, whereas for green and blue light the wavelength is shorter, the wavelength is shifted towards the insensitivity of the human eye. Therefore, the fifth sub-pixel structure 115 and the sixth sub-pixel structure 116 can reduce the sensitivity of the human eyes to green light and blue light under the side view angle, and improve the sensitivity of the human eyes to red light, so as to realize white light balance.
The cavity length of the microcavity structure corresponding to the sixth subpixel structure 116 may be smaller than the cavity length of the microcavity structure corresponding to the third subpixel structure 113 by: the thickness of the sixth light emitting layer 116c is smaller than that of the third light emitting layer 113c. In some embodiments, the ratio of the thickness of the sixth light emitting layer 116c to the thickness of the third light emitting layer 113c may range from 0.5 to 0.8.
In some embodiments, in the second sub-pixel structure 112, between the second anode 112a and the second light emitting layer 112c, there is further disposed: the second hole injection layer HIL2, the second hole transport layer HTL2, and the second electron blocking layer EBL2, and further provided between the second cathode 112b and the second light emitting layer 112c are: a second electron injection layer EIL2, a second electron transport layer ETL2, and a second hole blocking layer HBL2; in the fifth sub-pixel structure 115, a fifth anode 115a and a fifth light emitting layer 115c are further disposed between: a fifth hole injection layer, a fifth hole transport layer, and a fifth electron blocking layer, and further provided between the fifth cathode 115b and the fifth light emitting layer 115c are: a fifth electron injection layer, a fifth electron transport layer, and a fifth hole blocking layer.
Realizing that the cavity length of the microcavity structure corresponding to the fifth subpixel structure 115 is smaller than the cavity length of the microcavity structure corresponding to the second subpixel structure 112 may be by: the thickness of the fifth hole injection layer is smaller than the thickness of the second hole injection layer HIL2, and/or the thickness of the fifth hole transport layer is smaller than the thickness of the second hole transport layer HTL2, and/or the thickness of the fifth electron blocking layer is smaller than the thickness of the second electron blocking layer EBL2, and/or the thickness of the fifth light emitting layer 115c is smaller than the thickness of the second light emitting layer 112c, and/or the thickness of the fifth hole blocking layer is smaller than the thickness of the second hole blocking layer HBL2, and/or the thickness of the fifth electron transport layer is smaller than the thickness of the second electron transport layer ETL2, and/or the thickness of the fifth electron injection layer is smaller than the thickness of the second electron injection layer EIL 2.
In some embodiments, in the third sub-pixel structure 113, between the third anode 113a and the third light emitting layer 113c, there is further disposed: the third hole injection layer HIL3, the third hole transport layer HTL3, and the third electron blocking layer EBL3 are further provided between the third cathode 113b and the third light emitting layer 113 c: a third electron injection layer EIL3, a third electron transport layer ETL3 and a third hole blocking layer HBL3; in the sixth sub-pixel structure 116, a sixth anode 116a and a sixth light emitting layer 116c are further disposed between: a sixth hole injection layer, a sixth hole transport layer, and a sixth electron blocking layer, and further provided between the sixth cathode 116b and the sixth light emitting layer 116c are: a sixth electron injection layer, a sixth electron transport layer, and a sixth hole blocking layer.
Realizing that the cavity length of the microcavity structure corresponding to the sixth subpixel structure 115 is smaller than the cavity length of the microcavity structure corresponding to the third subpixel structure 113 may be by: the thickness of the sixth hole injection layer is smaller than the thickness of the third hole injection layer HIL3, and/or the thickness of the sixth hole transport layer is smaller than the thickness of the third hole transport layer HTL3, and/or the thickness of the sixth electron blocking layer is smaller than the thickness of the third electron blocking layer EBL3, and/or the thickness of the sixth light emitting layer 116c is smaller than the thickness of the third light emitting layer 113c, and/or the thickness of the sixth hole blocking layer is smaller than the thickness of the third hole blocking layer HBL3, and/or the thickness of the sixth electron transport layer is smaller than the thickness of the third electron transport layer ETL3, and/or the thickness of the sixth electron injection layer is smaller than the thickness of the third electron injection layer EIL 3.
In some embodiments, the fifth sub-pixel structure 115 and the sixth sub-pixel structure 116 may be alternatively arranged.
In some embodiments, the side of the plurality of pixel units 11 remote from the substrate 10 may be provided with an encapsulation layer, and the side of the encapsulation layer remote from the substrate 10 may be provided with a polarizer or a color filter layer.
The color filter layer includes color filter blocks corresponding to the emission colors of the respective sub-pixel structures 111, 112, 113, 114, 115, 116, with a black matrix between adjacent color filter blocks. In some embodiments, the second sub-pixel structure 112 and the fifth sub-pixel structure 115 may be disposed in close proximity to each other to continuously dispose the green color filter block; the third sub-pixel structure 113 and the sixth sub-pixel structure 115 may be disposed next to each other to sequentially dispose blue color filter blocks.
Based on the display panels 1, 2, 3, an embodiment of the present invention further provides a display device including any one of the display panels 1, 2, 3. The display device may be: electronic paper, mobile phone, tablet computer, television, notebook computer, digital photo frame, navigator and any other products or components with display function.
It is noted that in the drawings, the size of layers and regions may be exaggerated for clarity of illustration. Moreover, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or intervening layers may be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may be present. In addition, it will be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intervening layer or element may also be present. Like reference numerals refer to like elements throughout.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means one, two, or more than two, unless expressly defined otherwise.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the invention is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (9)
1. A display panel, comprising: a substrate and a plurality of pixel units arranged on the substrate, wherein each pixel unit at least comprises:
the light-emitting device comprises a first sub-pixel structure, a second sub-pixel structure, a third sub-pixel structure and a fourth sub-pixel structure, wherein the light-emitting color of the fourth sub-pixel structure is the same as that of the first sub-pixel structure, the cavity length of a microcavity structure corresponding to the fourth sub-pixel structure is larger than that of a microcavity structure corresponding to the first sub-pixel structure, and the light-emitting brightness attenuation rate of the fourth sub-pixel is increased and then reduced along with the increase of a side view angle; the light-emitting wavelength of the first sub-pixel structure is larger than the light-emitting wavelength of the second sub-pixel structure, and the light-emitting wavelength of the second sub-pixel structure is larger than the light-emitting wavelength of the third sub-pixel structure;
the first sub-pixel structure comprises a first anode, a first cathode and a first light-emitting layer positioned between the first anode and the first cathode, the fourth sub-pixel structure comprises a fourth anode, a fourth cathode and a fourth light-emitting layer positioned between the fourth anode and the fourth cathode, the thickness of the fourth light-emitting layer is larger than that of the first light-emitting layer, and the ratio of the thickness of the fourth light-emitting layer to that of the first light-emitting layer is 1.5-2.5.
2. The display panel of claim 1, wherein the first sub-pixel structure comprises, in order, the first anode, a first hole injection layer, a first hole transport layer, a first electron blocking layer, the first light emitting layer, a first hole blocking layer, a first electron transport layer, a first electron injection layer, and the first cathode, and the fourth sub-pixel structure comprises, in order, the fourth anode, a fourth hole injection layer, a fourth hole transport layer, a fourth electron blocking layer, the fourth light emitting layer, a fourth hole blocking layer, a fourth electron transport layer, a fourth electron injection layer, and the fourth cathode; the thickness of the fourth hole injection layer is greater than the thickness of the first hole injection layer, and/or the thickness of the fourth hole transport layer is greater than the thickness of the first hole transport layer, and/or the thickness of the fourth electron blocking layer is greater than the thickness of the first electron blocking layer, and/or the thickness of the fourth hole blocking layer is greater than the thickness of the first hole blocking layer, and/or the thickness of the fourth electron transport layer is greater than the thickness of the first electron transport layer, and/or the thickness of the fourth electron injection layer is greater than the thickness of the first electron injection layer.
3. The display panel of claim 1, wherein each of the pixel units further comprises: a fifth sub-pixel structure, wherein the light-emitting color of the fifth sub-pixel structure is the same as that of the second sub-pixel structure, and the cavity length of the microcavity structure corresponding to the fifth sub-pixel structure is smaller than that of the microcavity structure corresponding to the second sub-pixel structure;
and/or a sixth sub-pixel structure, wherein the luminous color of the sixth sub-pixel structure is the same as the luminous color of the third sub-pixel structure, and the cavity length of the microcavity structure corresponding to the sixth sub-pixel structure is smaller than that of the microcavity structure corresponding to the third sub-pixel structure.
4. The display panel of claim 3, wherein the second sub-pixel structure comprises a second anode, a second cathode, and a second light emitting layer between the second anode and the second cathode, the fifth sub-pixel structure comprises a fifth anode, a fifth cathode, and a fifth light emitting layer between the fifth anode and the fifth cathode, the fifth light emitting layer having a thickness less than a thickness of the second light emitting layer;
or the third sub-pixel structure comprises a third anode, a third cathode and a third light emitting layer positioned between the third anode and the third cathode, and the sixth sub-pixel structure comprises a sixth anode, a sixth cathode and a sixth light emitting layer positioned between the sixth anode and the sixth cathode, wherein the thickness of the sixth light emitting layer is smaller than that of the third light emitting layer.
5. The display panel of claim 3, wherein the second sub-pixel structure comprises a second anode, a second hole injection layer, a second hole transport layer, a second electron blocking layer, a second light emitting layer, a second hole blocking layer, a second electron transport layer, a second electron injection layer, and a second cathode in this order, and the fifth sub-pixel structure comprises a fifth anode, a fifth hole injection layer, a fifth hole transport layer, a fifth electron blocking layer, a fifth light emitting layer, a fifth hole blocking layer, a fifth electron transport layer, a fifth electron injection layer, and a fifth cathode in this order; the thickness of the fifth hole injection layer is smaller than the thickness of the second hole injection layer, and/or the thickness of the fifth hole transport layer is smaller than the thickness of the second hole transport layer, and/or the thickness of the fifth electron blocking layer is smaller than the thickness of the second electron blocking layer, and/or the thickness of the fifth light emitting layer is smaller than the thickness of the second light emitting layer, and/or the thickness of the fifth hole blocking layer is smaller than the thickness of the second hole blocking layer, and/or the thickness of the fifth electron transport layer is smaller than the thickness of the second electron transport layer, and/or the thickness of the fifth electron injection layer is smaller than the thickness of the second electron injection layer;
or the third sub-pixel structure sequentially comprises a third anode, a third hole injection layer, a third hole transport layer, a third electron blocking layer, a third light emitting layer, a third hole blocking layer, a third electron transport layer, a third electron injection layer and a third cathode, and the sixth sub-pixel structure sequentially comprises a sixth anode, a sixth hole injection layer, a sixth hole transport layer, a sixth electron blocking layer, a sixth light emitting layer, a sixth hole blocking layer, a sixth electron transport layer, a sixth electron injection layer and a sixth cathode; the thickness of the sixth hole injection layer is smaller than the thickness of the third hole injection layer, and/or the thickness of the sixth hole transport layer is smaller than the thickness of the third hole transport layer, and/or the thickness of the sixth electron blocking layer is smaller than the thickness of the third electron blocking layer, and/or the thickness of the sixth light emitting layer is smaller than the thickness of the third light emitting layer, and/or the thickness of the sixth hole blocking layer is smaller than the thickness of the third hole blocking layer, and/or the thickness of the sixth electron transport layer is smaller than the thickness of the third electron transport layer, and/or the thickness of the sixth electron injection layer is smaller than the thickness of the third electron injection layer.
6. The display panel according to claim 4 or 5, wherein a ratio of a thickness of the fifth light-emitting layer to a thickness of the second light-emitting layer is in a range of 0.5 to 0.8; or the ratio of the thickness of the sixth light-emitting layer to the thickness of the third light-emitting layer is in the range of 0.5 to 0.8.
7. The display panel of claim 1, wherein the first sub-pixel structure and the fourth sub-pixel structure emit red light, the second sub-pixel structure emits green light, and the third sub-pixel structure emits blue light.
8. The display panel according to claim 1, wherein an encapsulation layer is provided on a side of the plurality of pixel units away from the substrate, and a polarizer or a color filter layer is provided on a side of the encapsulation layer away from the substrate.
9. A display device, comprising: the display panel of any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011010616.9A CN112103324B (en) | 2020-09-23 | 2020-09-23 | Display device and display panel thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011010616.9A CN112103324B (en) | 2020-09-23 | 2020-09-23 | Display device and display panel thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112103324A CN112103324A (en) | 2020-12-18 |
| CN112103324B true CN112103324B (en) | 2023-05-26 |
Family
ID=73755197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011010616.9A Active CN112103324B (en) | 2020-09-23 | 2020-09-23 | Display device and display panel thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112103324B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113193150B (en) * | 2021-04-28 | 2023-06-16 | 合肥京东方卓印科技有限公司 | Top light-emitting display panel and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289295A (en) * | 2019-06-27 | 2019-09-27 | 昆山国显光电有限公司 | A kind of display panel and display device |
| CN110491930A (en) * | 2019-09-20 | 2019-11-22 | 昆山国显光电有限公司 | A kind of display panel and display device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9170665B2 (en) * | 2012-09-14 | 2015-10-27 | Universal Display Corporation | Lifetime OLED display |
| CN105789258B (en) * | 2016-03-24 | 2019-06-11 | 深圳市华星光电技术有限公司 | A kind of OLED display panel and 3D 3 d display device |
| CN108695359B (en) * | 2017-04-11 | 2021-10-22 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN108389978B (en) * | 2018-02-28 | 2021-03-02 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel and organic light-emitting display device thereof |
| CN108574052B (en) * | 2018-03-02 | 2021-06-22 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel and display device |
| CN110265463B (en) * | 2019-06-27 | 2021-08-03 | 昆山国显光电有限公司 | Display panel and display device |
-
2020
- 2020-09-23 CN CN202011010616.9A patent/CN112103324B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289295A (en) * | 2019-06-27 | 2019-09-27 | 昆山国显光电有限公司 | A kind of display panel and display device |
| CN110491930A (en) * | 2019-09-20 | 2019-11-22 | 昆山国显光电有限公司 | A kind of display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112103324A (en) | 2020-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101056679B1 (en) | Organic light emitting device and display device | |
| US10325973B2 (en) | Display unit and electronic apparatus | |
| US8022620B2 (en) | Display device for improving chromatic purity | |
| US8033675B2 (en) | Light emitting device and electronic device | |
| EP2618379A2 (en) | Organic light emitting display device | |
| CN108447895B (en) | Display panel and display device | |
| US20130082246A1 (en) | Display unit | |
| TW201801565A (en) | Light emitting element, light emitting device, and electronic apparatus | |
| JP4454354B2 (en) | Luminescent display device | |
| KR20090029645A (en) | Light-emitting device and electronic apparatus | |
| EP3696871B1 (en) | Display panel, display device and method for manufacturing display panel | |
| CN108389978B (en) | Organic light-emitting display panel and organic light-emitting display device thereof | |
| CN112103324B (en) | Display device and display panel thereof | |
| CN108493210B (en) | Organic light-emitting display panel and organic light-emitting display device thereof | |
| CN110311048B (en) | Light-emitting device and display panel | |
| CN113053989A (en) | Display device, display panel thereof and OLED display device | |
| JP2013058446A (en) | Display device | |
| JP6843727B2 (en) | Light emitting device | |
| WO2022109763A1 (en) | Display substrate and preparation method therefor, and display device | |
| CN113193150A (en) | Top-emitting display panel and display device | |
| JP2012230151A (en) | Electro-optical device | |
| JP2012252933A (en) | Light emitting device and electronic equipment | |
| KR102455567B1 (en) | Electroluminescent Display Device | |
| US11121183B2 (en) | Display panel | |
| JP2013206567A (en) | Light-emitting element, luminaire, and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |